电容装置及其制备方法

文档序号:751971 发布日期:2021-04-02 浏览:18次 >En<

阅读说明:本技术 电容装置及其制备方法 (Capacitor device and preparation method thereof ) 是由 陆斌 沈健 皮波 于 2019-07-26 设计创作,主要内容包括:本申请实施例提供一种电容装置及其制备方法,所述电容装置包括:至少一个电容器;其中,所述至少一个电容器包括至少一层第一电介质层和至少一层第二电介质层,所述第一电介质层具有正的电压系数且所述第二电介质层具有负的电压系数;和/或,所述第一电介质层具有正的温度系数且所述第二电介质层具有负的温度系数。利用正负相消的原理,可以使得所述至少一个电容器作为一个整体时其电压系数和/或温度系数为0或接近0。由此,所述至少一个电容器的偏压或者温度发生变化时,其容值不会发生变化或变化较小,有效保证了所述电容装置的性能。(The embodiment of the application provides a capacitor device and a preparation method thereof, wherein the capacitor device comprises: at least one capacitor; wherein the at least one capacitor comprises at least one first dielectric layer and at least one second dielectric layer, the first dielectric layer having a positive voltage coefficient and the second dielectric layer having a negative voltage coefficient; and/or the first dielectric layer has a positive temperature coefficient and the second dielectric layer has a negative temperature coefficient. The voltage coefficient and/or temperature coefficient of the at least one capacitor as a whole may be made 0 or close to 0 using the principle of positive and negative cancellation. Therefore, when the bias voltage or the temperature of the at least one capacitor changes, the capacitance value of the capacitor does not change or changes slightly, and the performance of the capacitor device is effectively ensured.)

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