阅读说明：本技术 电容器及其制造方法 (Capacitor and method for manufacturing the same ) 是由 吉田和司 萩原洋右 田浦巧 于 2020-03-09 设计创作，主要内容包括：电容器100包括硅衬底1、导体层2和电介质层3。硅衬底1包括：具有电容产生区域11和非电容产生区域12的主表面10；和在电容产生区域11中沿厚度方向设置的多孔部13。导体层2包括覆盖电容产生区域11的表面110的至少一部分的表面层部21和填充多孔部13的细孔130的至少一部分的填充部22。电介质层3插入在细孔130的内表面和填充部22之间。(The capacitor 100 includes a silicon substrate 1, a conductor layer 2, and a dielectric layer 3. The silicon substrate 1 includes: a main surface 10 having a capacitance generating region 11 and a non-capacitance generating region 12; and a porous portion 13 provided in the thickness direction in the capacitance generating region 11. The conductor layer 2 includes a surface layer portion 21 covering at least a part of the surface 110 of the capacitance generation region 11 and a filling portion 22 filling at least a part of the pores 130 of the porous portion 13. The dielectric layer 3 is interposed between the inner surface of the fine hole 130 and the filling part 22.)