阅读说明：本技术 一种控挡片清洗液及清洗方法 (Control separation blade cleaning solution and cleaning method ) 是由 尹印 徐子豪 万杨阳 贺兆波 张庭 冯凯 王书萍 倪高国 于 2020-12-07 设计创作，主要内容包括：本发明属于集成电路电子化学品领域,具体涉及一种控挡片清洗液及使用方法。所述控挡片清洗液主要成分包含氟化物、剥离剂、浸润剂、有机溶剂及水；氟化物含量10～30wt%、剥离剂含量0.1～1wt%、浸润剂含量0.1～1wt%、有机溶剂含量25～35wt%、余量为水。所述控挡片清洗液可用于清洗各种类型的氧化硅、正硅酸乙酯、氮化硅、多晶硅、光刻胶等薄膜,所述控挡片上具有所述材料。(The invention belongs to the field of integrated circuit electronic chemicals, and particularly relates to a separation blade control cleaning solution and a using method thereof. The main components of the control baffle plate cleaning solution comprise fluoride, a stripping agent, a sizing agent, an organic solvent and water; 10-30 wt% of fluoride, 0.1-1 wt% of stripping agent, 0.1-1 wt% of wetting agent, 25-35 wt% of organic solvent and the balance of water. The cleaning liquid for the control separation blade can be used for cleaning various types of films such as silicon oxide, tetraethoxysilane, silicon nitride, polycrystalline silicon, photoresist and the like, and the control separation blade is provided with the material.)

1. The cleaning liquid for the control baffle is characterized in that the main components of the cleaning liquid for the control baffle comprise fluoride, a stripping agent, a wetting agent, an organic solvent and water; 10-30 wt% of fluoride, 0.1-1 wt% of stripping agent, 0.1-1 wt% of wetting agent, 25-35 wt% of organic solvent and the balance of water.

2. The cleaning solution for control dams of claim 1, wherein the fluoride is hydrofluoric acid or a mixture of hydrofluoric acid and any one of ammonium fluoroborate, tetrabutylammonium fluoride, diethylaminosulfur trifluoride and 6-trifluoromethylnicotinic acid.

3. The separation blade control cleaning solution as claimed in claim 1, wherein the stripping agent is one or more of propylene glycol polyether, trimethylolpropane polyether, N-dimethylethanolamine and dimethylacetamide.

4. The cleaning liquid for control baffle plate as claimed in claim 1, wherein: the impregnating compound is one or more of dihydroxyethyl imidazoline, imidazoline phosphate salt and sulfonic acid type imidazoline.

5. The cleaning liquid for control baffle plate as claimed in claim 1, wherein: the organic solvent is a composition of alcohol ether, sulfone and pyrrolidone.

6. The flap cleaning liquid as set forth in claim 5, wherein: the alcohol ether is selected from any one of ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol butyl ether, diethylene glycol methyl ether, diethylene glycol butyl ether, triethylene glycol butyl ether, propylene glycol methyl ether, dipropylene glycol methyl ether and cyclohexanediol monomethyl ether; the sulfone is selected from sulfolane, dimethyl sulfone or diethyl sulfone; the pyrrolidone is selected from 2-pyrrolidone, N-methyl pyrrolidone or N-octyl pyrrolidone.

7. The flap cleaning liquid as set forth in claim 5, wherein: the content of the alcohol ether accounts for 50-60 wt% of the organic solvent, the content of the sulfone accounts for 20-30 wt% of the organic solvent, and the content of the pyrrolidone accounts for 10-20 wt% of the organic solvent.

8. A method for cleaning an empty separation blade by using the separation blade control cleaning liquid according to any one of claims 1 to 7, characterized by comprising: and mixing the cleaning liquid with hydrogen peroxide, putting the mixture into a blank sheet at a certain temperature for cleaning, taking out the control retaining sheet after cleaning, putting the control retaining sheet into isopropanol for cleaning, and then blowing to dry.

9. Method for cleaning empty flaps according to claim 8, characterized in that: the ratio of the cleaning liquid to the hydrogen peroxide is 4: 1-5: 1, the cleaning temperature is 60-70 ℃, and the cleaning time is 20-30 min.

10. Method for cleaning empty flaps according to claim 8, characterized in that: and the cleaning temperature of the isopropanol is 24-26 ℃, the cleaning time is 10-20 min, and nitrogen is adopted for drying.

Technical Field

The invention belongs to the field of electronic chemicals, and particularly relates to a separation blade control cleaning solution.

Background

The wafer refers to a silicon wafer used for manufacturing a silicon semiconductor circuit, and various circuit element structures are processed and manufactured on the wafer, so that the wafer can be an IC integrated circuit with a specific electric function. The fine requirement for manufacturing the wafer is extremely high, and the flatness of the surface of the silicon wafer directly relates to the performance quality of the chip, so that a wafer factory needs to constantly monitor and test the performance of the manufacturing equipment and maintain stability so as to ensure the final yield. The non-pattern silicon chip for testing and maintaining stability is the control chip and the baffle chip.

The control wafer is mainly used to monitor whether the process capability of the machine is stable and the production environment is clean. By using the control wafer, the processes such as ion implantation, thin film deposition, photolithography, etching, and polishing, such as resistivity, thin film deposition rate, etching rate, polishing rate, uniformity, etc., can be monitored. The function of the baffle plate is mainly to maintain the stability of the machine. The separation blade is used for isolating places with poor processing conditions and positions vacated when filling products are insufficient, airflow in the furnace tube is blocked and layered, and the temperature in the furnace tube is uniformly distributed, so that reaction gas in the airflow is uniformly contacted with a processed silicon wafer and is uniformly heated, a chemical physical reaction is generated, and a high-quality film with uniform deposition or growth is obtained.

The control wafer and the dummy wafer typically have various films after use, including silicon oxide, silicon nitride, polysilicon, photoresist, etc. Because the use amount of the control baffle is large, if a brand new baffle and control sheet is used each time, the test cost is too high. Therefore, the used separation blade and control wafer are usually recycled by a wafer regeneration method, and the oxide film, metal particle residue and the like generated on the surfaces of the separation blade and the control wafer due to the test are removed by the treatment methods of chemical soaking, physical grinding and the like, so that the separation blade and the control wafer can have the functions of testing and stabilizing the stability of a machine again. And because the film type is complicated, need use different chemical reagent to corrode to different retes, all wafer plants need use multiple chemical liquid medicine to remove various films, lead to the accuse separation blade to wash regeneration step loaded down with trivial details, and efficiency is lower, and too much the chemical species class also does not benefit to management and control raw materials quality and security.

Disclosure of Invention

The invention aims to solve the problems of various chemicals and low cleaning efficiency in cleaning and regeneration of control baffle plates in the existing semiconductor integrated circuit process, and aims to provide a control baffle plate cleaning solution and a using method thereof, which can effectively remove various types of silicon oxide, silicon nitride, polysilicon and photoresist and improve the wafer regeneration efficiency.

In order to achieve the purpose, the invention adopts the technical scheme that:

a cleaning liquid for the control separation blade is used in cooperation with hydrogen peroxide to remove a compound film on the control separation blade, so that the control separation blade can be recycled.

In the scheme, the compound film is a silicon oxide film, an ethyl orthosilicate film, a silicon nitride film, a polycrystalline silicon film, a photoresist film and other organic matter films.

In the scheme, the main components of the separation blade control cleaning solution comprise fluoride, a stripping agent, a wetting agent and an organic solvent.

In the scheme, the fluoride is hydrofluoric acid or a mixture of hydrofluoric acid and ammonium fluoroborate, tetrabutylammonium fluoride, diethylaminosulfur trifluoride and 6-trifluoromethyl nicotinic acid.

In the above scheme, the stripping agent is one or a combination of propylene glycol polyether, trimethylolpropane polyether, N-dimethylethanolamine and dimethylacetamide.

In the scheme, the impregnating compound is one or a composition of dihydroxyethyl imidazoline, imidazoline phosphate salt, sulfonic acid type imidazoline and the like.

In the above scheme, the organic solvent is a composition of alcohol ether, sulfone and pyrrolidone.

In the above scheme, the alcohol ether is selected from one of ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol butyl ether, diethylene glycol methyl ether, diethylene glycol butyl ether, triethylene glycol butyl ether, propylene glycol methyl ether, dipropylene glycol methyl ether and cyclohexanediol methyl ether; the sulfone is one selected from sulfolane, dimethyl sulfone and diethyl sulfone; the pyrrolidone is selected from one of 2-pyrrolidone, N-methyl pyrrolidone and N-octyl pyrrolidone.

In the scheme, the content of the at least one fluoride is 10-30 wt%, the content of the organic solvent is 25-35 wt%, the content of the at least one stripping agent is 0.1-1 wt%, the content of the at least one wetting agent is 0.1-1 wt%, and the balance is water.

In the scheme, in the organic solvent, the content of alcohol ether accounts for 50-60 wt% of the organic solvent, the content of sulfone accounts for 20-30 wt% of the organic solvent, and the content of pyrrolidone accounts for 10-20 wt% of the organic solvent.

In the scheme, the cleaning method comprises the steps of mixing cleaning liquid with hydrogen peroxide, putting a dummy sheet into the cleaning method at a certain temperature for cleaning, taking out the control barrier sheet after cleaning, putting the control barrier sheet into isopropanol for cleaning, and then blowing the control barrier sheet to dry.

In the scheme, the ratio of the cleaning liquid to the hydrogen peroxide is 4: 1-5: 1, the cleaning temperature is 60-70 ℃, and the cleaning time is 15-25 min.

In the scheme, the cleaning temperature of the isopropanol is 24-26 ℃, the cleaning time is 10-20 min, and nitrogen is used for drying.

The invention has the advantages of

(1) Compared with the existing means of removing various films by using various chemical liquid medicines, the cleaning device has higher cleaning efficiency and lower cost.

(2) The cleaning liquid has high fluoride content of effective components, the sulfone organic solvent can not lose the dissolving performance after dissolving other substances, and the service life is longer.

(3) When the cleaning solution is used for cleaning photoresist or other organic films, the existence of the stripping agent and the impregnating compound enables the films to be easily separated from the surfaces of the wafers, the cleaning efficiency is accelerated, and meanwhile, the stripping effect is increased due to the corrosion of high-concentration fluorine on the interfaces of the films and the wafers.

Detailed Description

In order to better understand the present invention, the following examples are further provided to illustrate the present invention, but the present invention is not limited to the following examples.

Comparative example

In the comparative example, different types of control baffle plates are respectively cleaned and regenerated by adopting the traditional corresponding chemical liquid. The silicon oxide and tetraethoxysilane film control baffle plates need to be cleaned by hydrofluoric acid solution, the silicon nitride film needs to be cleaned by high-temperature phosphoric acid solution or high-concentration hydrofluoric acid, the polycrystalline silicon film needs to be cleaned by nitric acid/hydrofluoric acid solution, and the photoresist film needs to be cleaned by photoresist stripping agent. Each control baffle sheet is 5, each control baffle sheet is a circular sheet with the diameter of 8 inches, 20L of corresponding liquid medicine is used for soaking and cleaning for 20min, the cleaning and regeneration results are shown in the following table, wherein silicon nitride and photoresist cannot be completely cleaned after being soaked for 20min, and the time is prolonged to 30 min:

TABLE 1 comparative example cleaning flap control Effect

Example 1

The component contents of the control baffle plate cleaning solution are shown in the table 2:

table 2 example 1 components and amounts

Preparing a cleaning solution according to the components and the contents listed in the table 2, taking the cleaning solution and hydrogen peroxide according to a volume ratio of 4: 1, mixing to obtain 20L of liquid medicine, adding 5 pieces of silicon oxide, tetraethoxysilane, silicon nitride, polycrystalline silicon and photoresist control baffle plates, cleaning at the temperature of 60 ℃, cleaning with isopropanol and drying with nitrogen after cleaning, and adopting the same cleaning method as the comparative example, wherein the cleaning results are shown in table 3.

Example 2

In the same manner as in example 1, only the fluoride was adjusted from hydrofluoric acid to a mixture of hydrofluoric acid and ammonium fluoroborate, the hydrofluoric acid content was 20%, the ammonium fluoroborate content was 10%, and the remaining component contents were unchanged, and the control flap cleaning procedure was set to example 2, which was the same as in example 1.

The cleaning method same as the comparative example was adopted, and the cleaning results are shown in table 3, the fluoride in this example is a mixture of hydrofluoric acid and ammonium fluoroborate, and compared with example 1, the cleaning time is slightly prolonged, but the cleaning effect is still good, and various films can be completely removed.

Example 3

In the same manner as in example 1, only the fluoride was adjusted from hydrofluoric acid to a mixture of hydrofluoric acid and tetrabutylammonium fluoride, the hydrofluoric acid content was 20%, the tetrabutylammonium fluoride content was 10%, and the remaining component contents were unchanged, and the arrangement was as in example 3, and the controlled flap cleaning step was the same as in example 1.

The cleaning method similar to the comparative example was adopted, and the cleaning results are shown in table 3, in this example, the fluoride is a mixture of hydrofluoric acid and ammonium fluoroborate, compared with examples 1 and 2, the cleaning time is slightly longer, but the cleaning effect is still better, various films can be completely removed, and the fluoride is preferably hydrofluoric acid.

Example 4

In the same manner as in example 1, the organic solvent was adjusted from a mixture of alcohol ether, sulfone and pyrrolidone to an alcohol ether-only solvent, the content of ethylene glycol monoether was 28%, the content of the remaining components was unchanged, the setting was made in example 4, and the step of cleaning the flow-control plate was the same as in example 1.

The same cleaning method as the comparative example is adopted, and the cleaning results are shown in table 3, in this example, the organic solvent is ethylene glycol monoether, compared with example 1, the photoresist has more residues under the same cleaning time, the cleaning time is continuously prolonged, and the photoresist film cannot be cleaned.

Example 5

In the same manner as in example 1, the organic solvent was adjusted from a mixture of alcohol ether, sulfone and pyrrolidone to a mixture containing only sulfone solvent, the sulfolane content was 28%, the remaining components were unchanged, the setting was made in example 5, and the procedure for cleaning the baffle plate was the same as in example 1.

The same cleaning method as the comparative example is adopted, and the cleaning results are shown in table 3, in this example, the organic solvent is sulfolane, compared with example 1, the photoresist has more residues under the same cleaning time, the cleaning time is continuously prolonged, and the photoresist film cannot be cleaned.

Example 6

In the same manner as in example 1, the organic solvent was adjusted from a mixture of alcohol ether, sulfone and pyrrolidone so as to contain only the pyrrolidone solvent, the 2-pyrrolidone content was 28%, the remaining component content was unchanged, and the setting was made as example 6, and the procedure for cleaning the baffle plate was the same as in example 1.

The same cleaning method as the comparative example is adopted, the cleaning result is shown in table 3, the organic solvent in the embodiment is 2-pyrrolidone, and compared with example 1, the photoresist has more residues under the same cleaning time, and the cleaning time is continuously prolonged, so that the photoresist film can not be cleaned.

Example 7

In the same manner as in example 1, the organic solvent was changed from a mixture of alcohol ether, sulfone and pyrrolidone to a mixture of alcohol ether and sulfone, the contents of ethylene glycol methyl ether and sulfolane were changed to example 7, and the procedure for cleaning the baffle plate was the same as in example 1.

The same cleaning method as the comparative example is adopted, and the cleaning results are shown in table 3, the organic solvents in this example are ethylene glycol methyl ether and sulfolane, compared with example 1, the photoresist has less residue under the same cleaning time, the cleaning time is continuously prolonged, and the photoresist film cannot be cleaned.

Example 8

In the same manner as in example 1, the organic solvent was changed from a mixture of alcohol ether, sulfone and pyrrolidone to a mixture of alcohol ether and pyrrolidone, the contents of ethylene glycol methyl ether and 2-pyrrolidone were 18% and 10% and the contents of the remaining components were unchanged, and the procedure for cleaning the barrier plates was set to example 8, which was the same as in example 1.

The same cleaning method as the comparative example is adopted, and the cleaning results are shown in table 3, the organic solvent in this example is ethylene glycol monomethyl ether and 2-pyrrolidone, compared with example 1, the photoresist has less residue under the same cleaning time, the cleaning time is continuously prolonged, and the photoresist film cannot be cleaned.

Example 9

In the same manner as in example 1, the organic solvent was changed from a mixture of alcohol ether, sulfone and pyrrolidone to a mixture of sulfone and pyrrolidone, the sulfolane content was 18%, the 2-pyrrolidone content was 10%, and the remaining components were unchanged, and the procedure for cleaning the baffle plate was set to example 9, which was the same as in example 1.

The same cleaning method as the comparative example is adopted, and the cleaning results are shown in table 3, in this example, the organic solvent is sulfolane and 2-pyrrolidone, and compared with example 1, the photoresist has less residue under the same cleaning time, and the photoresist film cannot be cleaned after the cleaning time is continuously prolonged.

Example 10

In the same manner as in example 1, the organic solvent was not added, the contents of the remaining components were unchanged, and the procedure for cleaning the baffle plate was set to example 9, which was the same as in example 1.

The same cleaning method as the comparative example was used, and the cleaning results are shown in table 3, but the present example did not contain organic solvent, and compared to example 1, the other films except the photoresist were completely removed, but the photoresist film could not be cleaned. In comparison with examples 1-10, the organic solvent in the invention is a mixture of alcohol ether, sulfone and pyrrolidone.

Example 11

In the same manner as in example 1, the stripping agent was not added, the contents of the remaining components were unchanged, the setting was made in example 11, and the procedure for cleaning the flow-control plate was the same as in example 1.

The same cleaning method as the comparative example is adopted, the cleaning result is shown in table 3, the stripping agent is not contained in the embodiment, compared with the embodiment 1, the cleaning is carried out for 12min, the films except the photoresist are cleaned, the cleaning time is continuously prolonged to 20min, the photoresist film is completely removed, and the stripping agent can enhance the cleaning efficiency of the organic matter films such as the photoresist.

Example 12

In the same manner as in example 1, the same procedure as in example 1 was repeated except that the wetting agent was not added and the contents of the remaining components were changed to give example 12.

The same cleaning method as the comparative example is adopted, the cleaning result is shown in table 3, the embodiment does not contain the impregnating compound, compared with the embodiment 1, when the cleaning is carried out for 12min, all the films are remained, the cleaning time needs to be prolonged to 18min, all the films can be cleaned, the impregnating compound can change the surface activity of the cleaning solution, the material exchange rate is accelerated, and the cleaning effect is improved.

Example 13

In the same manner as in example 1, the content of each component of the cleaning solution was not changed, hydrogen peroxide was not added in the cleaning process, and the rest of the steps were the same as in example 1, and were set as in example 13.

The same cleaning method as the comparative example is adopted, the cleaning result is shown in table 3, the cleaning process is not added in the embodiment, compared with the embodiment 1, when the cleaning is carried out for 12min, the polycrystalline silicon film cannot be cleaned, the photoresist film has a small amount of residues, the cleaning time is prolonged to 15min, the polycrystalline silicon film cannot be cleaned, and the photoresist film is completely removed. The hydrogen peroxide mainly plays a role in oxidation, and is matched with hydrofluoric acid to remove the polycrystalline silicon film in an acid environment, so that the hydrogen peroxide also has a promotion effect on removing organic matters such as photoresist and the like.

TABLE 3 cleaning Effect of the examples

In the above conclusions, the more residues are 20-50% of the surface area, the less residues are 20% of the surface area, and the residues are not cleaned films.

Example 14

The component contents of the separation blade control cleaning solution are shown in Table 4, and the balance is water:

TABLE 4 example 14 Components and amounts

Preparing a cleaning solution according to the components and the contents listed in the table 2, taking the cleaning solution and hydrogen peroxide according to the volume ratio of 5: 1, mixing to obtain 20L of liquid medicine, adding 5 pieces of silicon oxide, tetraethoxysilane, silicon nitride, polycrystalline silicon and photoresist control baffle plates, cleaning at the temperature of 60 ℃, cleaning with isopropanol and drying with nitrogen after cleaning, wherein the cleaning results are shown in table 5:

TABLE 5 example 14 cleaning flap control Effect

Example 15

The component contents of the separation blade control cleaning solution are shown in Table 6, and the balance is water:

TABLE 6 example 15 Components and amounts

Preparing a cleaning solution according to the components and the contents listed in the table 2, taking the cleaning solution and hydrogen peroxide according to the volume ratio of 6: 1, mixing to obtain 20L of liquid medicine, adding 5 pieces of silicon oxide, tetraethoxysilane, silicon nitride, polycrystalline silicon and photoresist control baffle plates, cleaning at the temperature of 65 ℃, cleaning with isopropanol and drying with nitrogen after cleaning, wherein the cleaning results are shown in table 7:

TABLE 7 example 15 cleaning flap control Effect

Example 16

The component contents of the separation blade control cleaning solution are shown in Table 8, and the balance is water:

TABLE 8 example 16 Components and amounts

Preparing a cleaning solution according to the components and the contents listed in the table 2, taking the cleaning solution and hydrogen peroxide according to a volume ratio of 4: 1, mixing to obtain 20L of liquid medicine, adding 5 pieces of silicon oxide, tetraethoxysilane, silicon nitride, polycrystalline silicon and photoresist control baffle plates, cleaning at the temperature of 70 ℃, cleaning with isopropanol and drying with nitrogen after cleaning, wherein the cleaning results are shown in table 9:

TABLE 9 example 16 cleaning flap control Effect

Example 17

The component contents of the separation blade control cleaning solution are shown in Table 10, and the balance is water:

TABLE 10 example 17 Components and amounts

Preparing a cleaning solution according to the components and the contents listed in the table 2, taking the cleaning solution and hydrogen peroxide according to the volume ratio of 5: 1, mixing to obtain 20L of liquid medicine, adding 5 pieces of silicon oxide, tetraethoxysilane, silicon nitride, polycrystalline silicon and photoresist control baffle plates, cleaning at the temperature of 70 ℃, cleaning with isopropanol and drying with nitrogen after cleaning, wherein the cleaning results are shown in table 11:

TABLE 11 example 17 cleaning flap control Effect

It is apparent that the above embodiments are only examples for clearly illustrating and do not limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications are therefore intended to be included within the scope of the invention as claimed.