阅读说明：本技术 高压隔离组件的裂纹抑制结构 (Crack suppression structure for high voltage isolation assembly ) 是由 E·C·斯图尔特 J·A·韦斯特 于 2019-07-25 设计创作，主要内容包括：一种集成电路(IC)(100)包括衬底(102),衬底(102)具有用于实现至少一个电路功能的功能电路(106),该功能电路与至少一个高压隔离组件一起配置,该高压隔离组件包括衬底(102)上方的顶部金属特征件(132)。至少包括抗裂电介质层的抗裂电介质结构(155)至少在顶部金属特征件(132)的顶部上。至少一个电介质钝化涂层(PO)层(160)在顶部金属特征件(132)的外部。(An Integrated Circuit (IC) (100) includes a substrate (102), the substrate (102) having functional circuitry (106) for implementing at least one circuit function, the functional circuitry configured with at least one high voltage isolation component, the high voltage isolation component including a top metal feature (132) over the substrate (102). An anti-crack dielectric structure (155) including at least an anti-crack dielectric layer is on at least a top portion of the top metal feature (132). At least one dielectric passivation coating (PO) layer (160) is external to the top metal feature (132).)

1. A method of fabricating an Integrated Circuit (IC), comprising:

providing a substrate having functional circuitry for implementing at least one circuit function, the functional circuitry having at least one high voltage isolation component comprising a top metal feature over the substrate;

depositing a crack inhibiting dielectric structure comprising at least one crack resistant dielectric layer on the top metal feature;

patterning and etching at least the top metal feature;

depositing at least one dielectric passivation coating, namely a dielectric PO layer, on at least the top of the top metal feature, an

Planarizing the dielectric PO layer.

2. The method of claim 1, wherein the crack inhibiting dielectric structure is deposited on the top metal feature prior to patterning and etching the top metal feature.

3. The method of claim 1, wherein after patterning and etching the top metal feature, the crack inhibiting dielectric structure is deposited such that the crack inhibiting dielectric structure is also positioned on sidewalls of the top metal feature.

4. The method of claim 1, wherein the crack inhibiting dielectric layer comprises a silicon nitride (SiN) layer or a silicon carbide (SiC) layer.

5. The method of claim 4, wherein the SiN layer or the SiC layer has a thickness of 200 to 800A and a compressive stress of 50 to 500 megapascals (MPa).

6. The method of claim 1, wherein the crack inhibiting dielectric layer comprises a silicon nitride (SiN) layer deposited by a plasma enhanced chemical vapor deposition process.

7. The method of claim 6, wherein depositing the crack inhibiting dielectric structure further comprises depositing a bottom silicon oxide layer prior to depositing the SiN layer, and depositing a top silicon oxide layer after depositing the SiN layer.

8. The method of claim 1, wherein planarizing the dielectric PO layer comprises Chemical Mechanical Polishing (CMP).

9. The method of claim 1, wherein the high voltage isolation component comprises a high voltage capacitor.

10. The method of claim 1, wherein the high voltage isolation component comprises a transformer, and wherein the top metal feature comprises a top electrode inductively coupled to an externally positioned inductive coil.

11. The method of claim 1, further comprising etching an opening through the dielectric PO layer and through the crack inhibiting dielectric structure to reach the top metal feature.

12. An Integrated Circuit (IC), comprising:

a substrate having functional circuitry for implementing at least one circuit function, the functional circuitry having at least one high voltage isolation component comprising a top metal feature over the substrate;

a crack inhibiting dielectric structure including at least an anti-cracking dielectric layer on at least a top portion of the top metal feature, an

At least one dielectric passivation coating, namely a dielectric PO layer, on the exterior of the top metal feature.

13. The IC of claim 12, wherein the crack inhibiting dielectric structure is also located on a sidewall of the top metal feature.

14. The IC of claim 12, wherein the crack-resistant dielectric layer comprises a silicon nitride (SiN) layer or a silicon carbide (SiC) layer.

15. The IC of claim 14, wherein the SiN layer or the SiC layer has a thickness of 200-800A and a compressive stress of 50-500 Mpa.

16. The IC of claim 12, wherein the crack inhibiting dielectric layer comprises a silicon nitride (SiN) layer between a top silicon oxide layer and a bottom silicon oxide layer.

17. The IC of claim 12, wherein the high voltage isolation component comprises a high voltage capacitor.

18. The IC of claim 12, wherein the high voltage isolation component comprises a transformer, and wherein the top metal feature comprises a top electrode inductively coupled to an externally positioned inductive coil.

Technical Field

The present disclosure relates generally to the fabrication of Integrated Circuit (IC) devices having high voltage components, such as capacitors or transformers, that include crack suppression structures.

Background

Some ICs include a High Voltage (HV) isolation component, such as a capacitor or transformer, which typically includes a first spiral inductor and a second spiral inductor, where the first spiral inductor acts to magnetically excite the second spiral inductor. The high voltage isolation component is located above the semiconductor surface within the metal stack, typically with a top metal feature at a top metal layer directly below the passivation layer(s).

Chemical mechanical polishing/planarization (CMP) is a widely used process that combines chemical and mechanical forces to smooth a surface. The CMP process uses an abrasive and corrosive chemical slurry and a polishing pad and retaining ring that are typically larger than the diameter of the wafer. The pad and wafer are pressed together by a dynamic polishing head and held in place by a retaining ring. The dynamic polishing head rotates about different rotational axes to remove material from the wafer surface and tends to flatten any irregular topography, thereby planarizing the wafer.

For example, when CMP is used to planarize passivation layer stacks, which typically include silicon oxide (e.g., silicon oxynitride on silicon oxide), CMP can create cracks in the dielectric layer being polished. CMP is typically performed on the silicon oxide followed by deposition of a silicon oxynitride portion of the passivation stack. CMP process conditions may be varied to minimize the occurrence of such silicon oxide layer cracks.

Disclosure of Invention

This summary is provided to introduce a selection of concepts in a simplified form that are further described below in the detailed description, including the drawings that are provided. This summary is not intended to limit the scope of the claimed subject matter.

The disclosed aspects include an IC comprising a substrate having functional circuitry for implementing at least one circuit function, the functional circuitry having at least one high voltage isolation component comprising a top metal feature over the substrate. A crack inhibiting dielectric structure including at least an anti-crack dielectric layer on at least a top portion of a top metal feature. At least one dielectric passivation coating (PO) layer is external to the top metal feature.

Drawings

Reference will now be made to the accompanying drawings, which are not necessarily drawn to scale, and wherein:

fig. 1A depicts a cross-sectional view of a portion of an example IC having a high voltage isolation capacitor (HV ISO capacitor) including the disclosed dielectric crack suppression structure on top of a top plate of the HV ISO capacitor.

Fig. 1B depicts a cross-sectional view of a portion of an example IC having a HV ISO capacitor including the disclosed dielectric crack suppression structure on top of a top plate and along a sidewall of the HV ISO capacitor.

Fig. 1C shows an example 3-layer crack suppression structure.

Fig. 2A-2F are cross-sectional views illustrating a process of an example method for forming an IC with a HV ISO capacitor, according to an example aspect.

Fig. 2G is a cross-sectional view illustrating steps in a process corresponding to fig. 2F of an HV ISO capacitor of an example method for forming an IC with an HV transformer, according to an example aspect.

Detailed Description

Example aspects are described with reference to the drawings, wherein like reference numerals are used to refer to like or equivalent elements. The illustrated ordering of acts or events should not be considered limiting, as some acts or events may occur in different orders and/or concurrently with other acts or events. Moreover, some illustrated acts or events may not be required to implement a methodology in accordance with the present disclosure.

Further, as used herein, the term "coupled to" or "coupled with … …" (and the like), is not further limited and is intended to describe an indirect or direct electrical connection. Thus, if a first device is "coupled" to a second device, that connection may be through a direct electrical connection where only the parasitic body is present in the path, or through an indirect electrical connection via intervening items, including other devices and connections. For indirect coupling, the intermediate term does not generally modify the information of the signal, but may adjust its current level, voltage level, and/or power level.

While effective to some extent, it is recognized that CMP processing solutions aimed at reducing dielectric cracking do not largely eliminate cracking due to the CMP process. The present invention also recognizes that dielectric cracks generated during CMP can extend to and terminate at the underlying metal layer, which can lead to device failure or reduced performance. One example of device failure occurs when a post-CMP dilute hydrofluoric acid (HF) cleaner penetrates a dielectric crack in the passivation layer, thereby attacking the underlying top metal, forming a void in the top metal. Such voids can lead to device failure, including field failure (e.g., reliability failure) or degradation of IC performance.

The present invention adds a dielectric crack suppression structure that includes an anti-crack dielectric layer between the passivation layer(s) and the top metal layer of the HV isolation assembly to be crack protected that significantly reduces the incidence of dielectric cracks that reach the top metal that may lead to IC failure or performance degradation. HV isolation assemblies are typically designed to be able to withstand voltages of at least 100 volts. For example, the crack-resistant dielectric layer may comprise a silicon nitride (SiN) layer, which may be deposited on top of the top metal prior to forming the passivation layer(s), which acts as a crack stop layer to protect the top metal of the HV isolation assembly from chemical attack when cracks are formed during CMP of the passivation layer(s).

Fig. 1A depicts a cross-sectional view of a portion of an example IC 100 having a HV ISO capacitor 104, the HV ISO capacitor 104 including a disclosed dielectric crack suppression structure 155, the dielectric crack suppression structure 155 shown by way of example as a single crack resistant dielectric layer on the exterior on the top of the top plate 132 of the HV ISO capacitor 104. The dielectric crack suppression structure 155 is not shown in the inner window opened by the dielectric passivation coating (PO) layer 160 because it was removed during the etching of the PO layer 160.

The dielectric crack resistant dielectric layer typically comprises SiN, for example, 300 a to 300 a thickThe compressive stress is 100 to 200 MPa. The crack-resistant dielectric layer may also comprise other crack-resistant materials, such as SiC. The dielectric crack suppression structure 155 may also include 2 or more layers, such as the 3-layer crack suppression structure shown in fig. 1C described below, where the crack-resistant dielectric layer 155b is shown between the top layer 155C and the bottom layer 155 a. The top plate 132 may comprise TiN, aluminum (Al), or TaN. The bottom plate of the HV ISO capacitor 104 is shown as reference 130. The base plate 130 may comprise, for example, aluminum or copper or alloys thereof.

The IC 100 may be provided as part of an IC or as a system on a chip (SOC) or the like. Other configurations of the IC 100 (e.g., hybrid circuits) are within the scope of the present example. IC 100 is formed on a substrate 102, such as a silicon wafer. The HV ISO capacitor 104 is configured to provide galvanic isolation between two voltage domains of an IC or system having different voltage levels. For example, a low voltage component of a Metal Oxide Semiconductor (MOS) transistor 106 depicted as having a gate dielectric layer 110 that is typically less than 70 nanometers thick, which may operate at a voltage of about 24 volts or less, has a gate electrode 113 thereon. The MOS transistor 106 is part of a functional circuit that includes circuit elements (including transistors, typically including diodes, resistors, capacitors, etc.) formed in the substrate 102 that are configured to implement at least one circuit function, such as an analog (e.g., amplifier, power converter, or power Field Effect Transistor (FET)), radio frequency, digital, or memory function, along with the HV ISO capacitor 104.

A Field Oxide (FOX) layer or region 112 may be formed in the substrate 102 (e.g., near or adjacent to a top surface of the substrate) to laterally electrically isolate elements of the IC 100. A pre-metal dielectric (PMD) layer 114 is formed over a substrate 102, the substrate 102 including any FOX layers or regions prior to deposition of subsequent metal layers, e.g., metal levels 118-1 to 118-N. Filled vias 116 may be disposed through PMD layer 114 to provide electrical connections for low voltage components such as MOS transistors 106, as well as other components or circuit portions (not specifically shown in fig. 1A) of microelectronic device 100A.

A plurality of metal levels 118-1 (bottom or "first" metal level) through 118-N (top metal level) are disposed above PMD layer 114, and PMD layer 114 may include metal interconnects 120 connected to MOS transistors 106 and any additional components, devices, or circuit portions. An inter-level dielectric (ILD) layer 122a, 122b, 122c (e.g., a dielectric material or a composition comprised of a silicon dioxide-based material or the like) is disposed between the metal interconnects 120 in each metal level. Various via levels 124 are disposed between metal levels 118-1 through 118-N, where example via levels 124 may include metal vias 126 connecting metal interconnects 120. In one arrangement, the various dielectric layers may be formed in similar process flows using similar materials. It is to be understood that other dielectric materials for the ILD layers 122a, 122b, 122c, such as low dielectric constant (k) materials, are within the scope of the present embodiments, such as FSG (fluorinated silicate glass,. kappa. ═ 3.6), OSG (organosilicate glass,. kappa. ═ 2.9), and ULK (ultra low k dielectric material,. kappa. ═ 2.5). The ILD layer may include a capping layer and an etch stop layer of different dielectric materials (e.g., SiN).

The bottom plate 130 of the HV ISO capacitor 104 is disposed in one of the metal levels, for example, in the first metal level 118-1 as depicted in fig. 1A. The top electrode 132 of the HV ISO capacitor 104 formed by the top metal level 118-N is below a PO layer 160, such as a PO silicon oxynitride layer on another PO layer 156 (e.g., a PO silicon oxide layer, which is depicted as being above the ILD layer 122 c).

The PO layer 156 after CMP is typically 1.0 to 2.0 μm thick, for example 1.5 μm measured over the top metal layer 118-N. The PO layer 160 is typically 2.5 μm to 3.0 μm, for example about 2.8 μm and comprises silicon oxynitride. Since a single PO layer is also possible, a PO comprising only silicon oxide may not provide a moisture barrier, and a PO comprising only silicon nitride may provide excessive stress when top metal layer 118-N comprises aluminum.

The bottom plate 130 and top plate 132 of the HV ISO capacitor 104 are vertically disposed together to operate as a HV capacitor, for example, in an example implementation of the IC 100, to provide suitable galvanic isolation with desired breakdown characteristics, a typical single capacitor surge capability of up to 10kV peak and a series capacitor (enhanced isolation) surge capability of up to 17 to 24kV peak, according to some embodiments.

The dielectric of the HV ISO capacitor 104, including the ILD layers 122a, 122b, and 122c, may be formed to have a total thickness of at least 2 microns (μm) and may be determined by the desired operating voltage of the HV ISO capacitor 104 between its plates 130, 132 and possibly the substrate 102. For example, one embodiment of the HV ISO capacitor 104, where the top plate 132 is designed to operate at 750 volts, may have a capacitor dielectric thickness of 8 μm to 14 μm.

Fig. 1B depicts a cross-sectional view of a portion of an example IC 150 having a HV ISO capacitor 104 ', the HV ISO capacitor 104' including a disclosed dielectric crack suppression structure 155 'on top of the top plate 132 and along sidewalls of the HV ISO capacitor 104'. As with HV ISO capacitor 104 in fig. 1A, dielectric crack suppression structure 155' is not present in the inner window opened by PO layer 160 because it is removed during etching of PO layer 160. The dielectric crack suppression structure may be deposited on the top metal feature (top plate 132 in fig. 1B) prior to patterning and etching of the top metal feature. In this case, a single mask may be used, and the crack resistant dielectric layer (e.g., SiN) and the top metal etch will typically use different chemistries, and the crack suppression structures 155' will only be on the top of the top metal features (as shown in fig. 1A). Crack-inhibiting dielectric structures may also be deposited after the patterning and etching of the top metal features. In this case, the crack inhibiting dielectric structure is also positioned on top of the top metal features and on the sidewalls thereof and over the layer 122c between the metal features.

Fig. 1C shows an example 3-layer crack suppression structure, shown as a top layer 155C on an anti-crack dielectric layer 155b on a bottom layer 155 a. The 3-layer crack suppression structure may include a silicon oxide layer serving as an adhesion layer 155a, SiN serving as a crack suppression dielectric layer of the crack-resistant dielectric layer 155b, and a layer 155c including a capping oxide to provide a hydrophilic surface for metal patterning. One particular example 3-layer dielectric crack inhibiting structure stack includes a layer 155a that is a 50A silicon oxide layer, an anti-crack dielectric layer 155b that is a 300-500A SiN layer, and a layer 155c that is a 50A silicon oxide layer.

Fig. 2A illustrates in cross-section the structure of an in-process HV ISO capacitor on an IC shown at the beginning of the formation of the bottom plate 130. Depicted in fig. 2A is semiconductor substrate 102 upon which a handle layer 212 represents the various layers formed during front-end processing in a previously performed conventional semiconductor processing step, PMD layer 114 above the handle layer, and metal level 118-1 above PMD layer 114. Filled vias 116 are formed through PMD layer 114. In the final HV ISO capacitor, metal level 118-1 will be patterned as bottom plate 130. In the handle layer 212, previous processing steps, such as photolithography, etching, ion implantation, and diffusion, are performed to form various devices (not shown for simplicity) in the substrate 102, and these devices may be interconnected, such as transistors including MOS transistors, bipolar transistors, or FETs other than MOS, diodes, resistors, inductors, capacitors, and so forth.

Metal level 118-1 may be, for example, aluminum or copper or alloys thereof, the metal being one used in a particular semiconductor manufacturing process. Single, dual damascene copper or copper alloy materials may be used to form metal level 118-1. However, fig. 2B to 2G illustrate the use of a non-damascene metal layer which may be made of an aluminum metal layer, which, unlike copper, may be directly etched.

Fig. 2B shows an in-process HV ISO capacitor on the IC after patterning metal level 118-1 (including forming bottom plate 130 of the HV ISO capacitor, followed by deposition and subsequent planarization of ILD layer 122 a). Fig. 2C shows an in-process HV ISO capacitor on the IC after formation of several more metal interconnect levels (including formation of filled vias 116 in the ILD layer, followed by formation of patterned metal thereon, etc.), as shown by 118-2, 118-3 separated by ILDs 122a, 122b, 122C. In the region where the HV ISO capacitor is formed over the bottom plate 130, only the dielectric is present, as shown by ILD layers 122a, 122b, and 122 c. The metal level at which the backplane 130 is provided is shown at 118-1.

Fig. 2D shows an in-process HV ISO capacitor on the IC after forming and patterning the top metal level 118-4 including the top plate 132. Fig. 2E shows the in-process HV ISO capacitor on the IC after forming a dielectric crack suppression structure as shown by the anti-crack dielectric layer 155b on top of the top plate 132 and along the sidewalls of the HV ISO capacitor. The dielectric layer(s) for the dielectric crack suppression structure may be deposited by a Low Pressure Chemical Vapor Deposition (LPCVD) process, such as plasma enhanced cvd (pecvd) or High Pressure Deposition (HPD). Fig. 2F shows HV ISO capacitor 104 "on the IC after forming PO layer 160 including over anti-crack dielectric layer 155b and subsequent planarization with Chemical Mechanical Planarization (CMP).

The crack 291 shown is emanating from the surface of the PO layer 160 (which may be due to a CMP process), which stops at the crack-resistant dielectric layer 155 b. As described above, during etching of the PO layer 160, the crack-resistant dielectric layer 155b or a corresponding layer of the dielectric crack suppression structure including two or more layers is typically removed in the inner window opened by the PO layer 160. Not shown is a hole etched through the PO layer 160 over a portion of the top plate 132 to bond a wire bond thereto. Although contact to the backplane 130 is not shown, contact is typically made by metal interconnects 120 extending from above the backplane to nearby circuit elements (e.g., digitizers or modulators). The connection to the backplane 130 can be either an input node or an output node depending on whether the HV ISO capacitor is in the transmitter channel or the receiver channel.

Fig. 2G is a cross-sectional view illustrating steps in a process corresponding to fig. 2F of an HV ISO capacitor of an example method for forming an IC with HV transformer 250, according to an example aspect. HV transformer 250 includes top electrode 132a, top inductor 133, bottom electrode 130a, and bottom inductor 133'. In the case of a magnetic sensor, only one inductor coil needs to be on top.

The disclosed aspects can be used to form semiconductor dies that can be integrated into various assembly streams to form a variety of different devices and related products. The semiconductor die may include various elements therein and/or layers thereon, including barrier layers, dielectric layers, device structures, active and passive elements, including source regions, drain regions, bit lines, bases, emitters, collectors, conductive lines, conductive vias, and the like. Additionally, the semiconductor die may be formed by a variety of processes including bipolar, Insulated Gate Bipolar Transistor (IGBT), CMOS, BiCMOS, and MEMS.

Those skilled in the art to which this disclosure relates will appreciate that many other aspects are possible within the scope of the claimed invention and that further additions, deletions, substitutions and modifications to the described aspects may be made without departing from the scope of the disclosure.