阅读说明：本技术 显示面板及其制备方法 (Display panel and preparation method thereof ) 是由 张鑫 冼志科 李吉 于 2020-06-08 设计创作，主要内容包括：本申请提供一种显示面板及其制备方法,显示面板包括基板、薄膜晶体管层、反射层、附加层和迷你发光二极管,薄膜晶体管层设置于基板上,反射层设置于薄膜晶体管层上,反射层由两种不同折射率的材料交替层叠设置形成,反射层具有第一通孔,第一通孔暴露薄膜晶体管层,附加层设置于反射层上,附加层具有第二通孔,第一通孔与第二通孔贯通以暴露薄膜晶体管层,附加层包括微粒,迷你发光二极管设置于第一通孔和第二通孔中以电连接薄膜晶体管层。在本申请中,在反射层上设置附加层,提高了光的利用率,并提高了光线的均匀性,进而提高了显示面板的性能。(The application provides a display panel and a preparation method thereof, the display panel comprises a substrate, a thin film transistor layer, a reflecting layer, an additional layer and a mini light-emitting diode, the thin film transistor layer is arranged on the substrate, the reflecting layer is arranged on the thin film transistor layer and formed by alternately stacking two materials with different refractive indexes, the reflecting layer is provided with a first through hole, the first through hole exposes the thin film transistor layer, the additional layer is arranged on the reflecting layer and provided with a second through hole, the first through hole is communicated with the second through hole to expose the thin film transistor layer, the additional layer comprises particles, and the mini light-emitting diode is arranged in the first through hole and the second through hole to be electrically connected with the thin film transistor layer. In this application, set up the additional layer on the reflector layer, improved the utilization ratio of light to the homogeneity of light has been improved, and then has improved display panel's performance.)

1. A display panel, comprising:

a substrate;

a thin-film transistor layer disposed on the substrate;

the reflecting layer is arranged on the thin film transistor layer and comprises a plurality of first sub-layers and a plurality of second sub-layers, the first sub-layers and the second sub-layers are sequentially and alternately stacked, the first sub-layers are made of a first refractive index material, the second sub-layers are made of a second refractive index material, the reflecting layer is provided with a first through hole, and the thin film transistor layer is exposed through the first through hole;

an additional layer disposed on the reflective layer, the additional layer having a second via, the first via and the second via passing through to expose the thin-film-transistor layer, the additional layer comprising particles; and

and the mini light-emitting diode is arranged in the first through hole and the second through hole to be electrically connected with the thin film transistor layer.

2. The display panel of claim 1, wherein the particles comprise polymethylmethacrylate, polystyrene, SiO₂And TiO₂One or a combination of several of them.

3. The display panel of claim 1, wherein the particles have a diameter of 5 microns to 30 microns.

4. The display panel of claim 1, wherein the first segment has a thickness of 55 nm to 65 nm and the second segment has a thickness of 65 nm to 85 nm.

5. The display panel of claim 1, wherein the first refractive index material has a refractive index greater than the second refractive index material, the first refractive index material having a refractive index of 1.7-2.2, and the second refractive index material having a refractive index of 1.35-1.55.

6. A method for manufacturing a display panel, comprising:

a substrate;

forming a thin film transistor layer on the substrate;

sequentially and alternately laminating a plurality of first sub-layers and a plurality of second sub-layers on the thin film transistor layer to form a reflecting layer, wherein the plurality of first sub-layers are made of a first refractive index material, and the plurality of second sub-layers are made of a second refractive index material;

forming an additional layer on the reflective layer, the additional layer comprising particles;

etching the reflecting layer and the additional layer to form a first through hole and a second through hole, wherein the first through hole and the second through hole are communicated to expose the thin film transistor layer; and

and arranging mini light-emitting diodes in the first through hole and the second through hole to be electrically connected with the thin film transistor layer.

7. The method of claim 6, wherein the particles comprise polymethylmethacrylate, polystyrene, SiO₂And TiO₂One or a combination of several of them.

8. The method of manufacturing a display panel according to claim 6, wherein the particles have a diameter of 5 to 30 μm.

9. The method of manufacturing a display panel according to claim 6, wherein the first layered layer has a thickness of 55 nm to 65 nm, and the second layered layer has a thickness of 65 nm to 85 nm.

10. The method of manufacturing a display panel according to claim 6, wherein the refractive index material of the first refractive index material is larger than the refractive index material of the second refractive index material, the refractive index of the first refractive index material is 1.7 to 2.2, and the refractive index of the second refractive index material is 1.35 to 1.55.

Technical Field

The application relates to the field of display, in particular to a display panel and a preparation method thereof.

Background

In the prior art, in order to improve the light utilization rate of the light emitting diode, a reflective film is usually adhered to a light emitting diode substrate to enable the light emitted by the light emitting diode and the light reflected by a diffusion film above the light emitting diode to be reflected into the liquid crystal display again, but the thickness of the adhered reflective film is thicker, the performance of a display panel is influenced, the cost is high, and the reduction of the product period is not facilitated; moreover, the preparation of the reflective film is incompatible with the conventional thin film transistor process, thereby increasing the production cost.

Disclosure of Invention

The application provides a display panel and a preparation method thereof, which are used for improving the performance of the display panel.

The application provides a display panel, including:

a substrate;

a thin-film transistor layer disposed on the substrate;

the reflecting layer is arranged on the thin film transistor layer and comprises a plurality of first sub-layers and a plurality of second sub-layers, the first sub-layers and the second sub-layers are sequentially stacked, the first sub-layers are made of a first refractive index material, the second sub-layers are made of a second refractive index material, the reflecting layer is provided with a first through hole, and the thin film transistor layer is exposed through the first through hole;

an additional layer disposed on the reflective layer, the additional layer having a second via, the first via and the second via passing through to expose the thin-film-transistor layer, the additional layer comprising particles; and

and the mini light-emitting diode is arranged in the first through hole and the second through hole to be electrically connected with the thin film transistor layer.

In the display panel provided by the present application, the particles comprise polymethyl methacrylate, polystyrene, SiO₂And TiO₂One or a combination of several of them.

In the display panel provided by the present application, the particles have a diameter of 5 to 30 micrometers.

In the display panel provided by the application, the thickness of the first layered layer is 55 nm-65 nm, and the thickness of the second layered layer is 65 nm-85 nm.

In the display panel provided by the application, the refractive index material of the first refractive index material is larger than that of the second refractive index material, the refractive index of the first refractive index material is 1.7-2.2, and the refractive index of the second refractive index material is 1.35-1.55.

The application provides a preparation method of a display panel, which comprises the following steps:

a substrate;

forming a thin film transistor layer on the substrate;

sequentially and alternately laminating a plurality of first sub-layers and a plurality of second sub-layers on the thin film transistor layer to form a reflecting layer, wherein the plurality of first sub-layers are made of a first refractive index material, and the plurality of second sub-layers are made of a second refractive index material;

forming an additional layer on the reflective layer, the additional layer comprising particles;

etching the reflecting layer and the additional layer to form a first through hole and a second through hole, wherein the first through hole and the second through hole are communicated to expose the thin film transistor layer; and

and arranging mini light-emitting diodes in the first through hole and the second through hole to be electrically connected with the thin film transistor layer.

In the method for preparing the display panel, the particles comprise polymethyl methacrylate, polystyrene and SiO₂And TiO₂One or a combination of several of them.

In the method for manufacturing the display panel, the diameter of the particles is 5-30 microns.

In the preparation method of the display panel, the thickness of the first layered layer is 55 nm-65 nm, and the thickness of the second layered layer is 65 nm-85 nm.

In the method for manufacturing the display panel, the refractive index of the first refractive index material is greater than that of the second refractive index material, the refractive index of the first refractive index material is 1.7-2.2, and the refractive index of the second refractive index material is 1.35-1.55.

The application provides a display panel and a preparation method thereof, the display panel comprises a substrate, a thin film transistor layer, a reflecting layer, an additional layer and a mini light-emitting diode, the thin film transistor layer is arranged on the substrate, the reflecting layer is arranged on the thin film transistor layer and formed by alternately stacking two materials with different refractive indexes, the reflecting layer is provided with a first through hole, the first through hole exposes the thin film transistor layer, the additional layer is arranged on the reflecting layer and provided with a second through hole, the first through hole is communicated with the second through hole to expose the thin film transistor layer, the additional layer comprises particles, and the mini light-emitting diode is arranged in the first through hole and the second through hole to be electrically connected with the thin film transistor layer. In this application, through the material formation reflection stratum of alternative range upon range of different refracting indexes of setting, the rethread sets up the additional layer on the reflection stratum, has improved the utilization ratio of light to the homogeneity of light has been improved, and then has improved display panel's performance.

Drawings

In order to more clearly illustrate the technical solutions in the present application, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a structural cross-sectional view of a display panel provided in the present application.

FIG. 2 is a cross-sectional view of a thin film transistor according to the present invention

Fig. 3 is a structural sectional view of a reflective layer provided in the present application.

Fig. 4 is a schematic diagram of a reflectivity curve of the reflective layer provided in the present application.

FIG. 5 is a cross-sectional view of a first construction of the reflective layer and additional layer provided herein.

FIG. 6 is a cross-sectional view of a second construction of a reflective layer and an additional layer as provided herein.

Fig. 7 is a cross-sectional flow diagram of a method for manufacturing a display panel provided by the present application.

Detailed Description

The technical solution in the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It should be apparent that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any inventive step based on the embodiments in the present application, are within the scope of protection of the present application.

The present application provides a display panel. Referring to fig. 1, fig. 1 is a cross-sectional view of a display panel provided in the present application. The display panel 10 includes a substrate 100, a thin-film transistor layer 200, a reflective layer 300, an additional layer 400, and a mini light emitting diode 500.

The substrate 100 may be a glass substrate.

Referring to fig. 2, fig. 2 is a cross-sectional view of a thin film transistor provided in the present application. The thin-film transistor layer 200 is disposed on the substrate 100. The thin-film transistor layer 200 covers the substrate 100. The thin-film transistor layer 200 includes a thin-film transistor 210. The thin film transistor 210 includes a gate electrode 201, a first protective layer 202, a gate insulating layer 203, an active layer 204, a source electrode 205, a drain electrode 206, and a second protective layer 207. The first protective layer 202 covers the gate 201. The material of the gate 201 includes one or a combination of Mo, Al, Ti, In and Ga. The gate insulating layer 203 is disposed on the first protection layer 202. The material of the gate insulating layer 203 includes Al₂O₃SiOx and SiN_XOne or a combination of several of them. The active layer 204 is disposed on the gate insulating layer 203. The material of the active layer 204 includes amorphous silicon. The source 205 is disposed at one end of the gate insulating layer 203 and one end of the active layer 204. The drain electrode 206 is disposed at the other end of the gate insulating layer 203 and the other end of the active layer 204. The source 205 and the drain 206 are insulated from each other. The second protective layer 207 covers the source 205, the drain 206, and the gate insulating layer 203. The second passivation layer 207 is used to protect the structures in the thin film transistor 210 from other structures or water and oxygenThe effect of the thin film transistor 210. The thin film transistor 210 includes other structures besides the structure shown in fig. 2, which are not listed here.

Referring to fig. 3, fig. 3 is a cross-sectional view of a reflective layer according to the present application. A reflective layer 300 is disposed on the thin-film transistor layer 200. The reflective layer 300 is a distributed bragg reflector. The distributed bragg reflector is a structure that reflects at the interface when light passes through different media. The reflective layer 300 comprises a number of first sublayers 301 and a number of second sublayers 302. The plurality of first divided layers 301 and the plurality of second divided layers 302 are alternately stacked in sequence. The first segment 301 is formed of a first refractive index material. The second segment 302 is formed of a second refractive index material. The first refractive index material has a refractive index greater than the refractive index of the second refractive index material. The reflective layer 300 has a first through hole 390. First via 390 exposes thin-film-transistor layer 200.

In another embodiment, the first refractive index material has a refractive index of 1.7-2.2. The second refractive index material has a refractive index of 1.35 to 1.55.

In another embodiment, the first refractive index material comprises SiN_x、TiO₂ZnS and Al₂O₃One or a combination of several of them. The second refractive index material comprises SiO₂And MgF₂One or a combination of both.

In another embodiment, the first layer has a thickness of 55 nm to 65 nm. The thickness of the second layer is 65 nm-85 nm.

Referring to fig. 4, fig. 4 is a schematic view illustrating a reflectivity curve of a reflective layer according to the present application. The reflection stratum is because of being formed by two kinds of different refractive index material range upon range of in turn, and light will reflect light when reflection stratum 300, because the thick quarter wavelength that satisfies of each layer membrane, the reverberation mutual interference reinforcing of each interface to improve the reflectivity, improved mini emitting diode's light utilization ratio, and the consumption of reduction power, and then improved display panel's performance. When the number of the layered layers of the reflective layer 300 is different, the reflective layer 300 has different reflectivity to light, and a 6-layered reflective layer structure, that is, a total of 6 layered layers formed by alternately stacking two materials having different refractive indexes. Subsequent 8, 10 and 16 layers of delamination as well, with a reflectivity of 75% and above 75% at a wavelength of 440 nm-490 nm; the reflectivity of 8 layered reflecting layer structures at the wavelength of 440 nm-490 nm reaches 85% and more than 85%; the reflectivity of 10 layered reflecting layer structures at the wavelength of 440 nm-490 nm reaches 90% and above 90%; the 16-layer layered reflecting layer structure has reflectivity of 97% and over 97% at wavelength of 440 nm-490 nm.

In this application, the reflection layer structure blue light reflectivity is high, can regard as the speculum of blue light, combines with quantum dot to form the quantum dot display of high colour gamut.

Referring to fig. 5 and 6, fig. 5 is a cross-sectional view of a first structure of a reflective layer and an additional layer provided in the present application. FIG. 6 is a cross-sectional view of a second construction of a reflective layer and an additional layer as provided herein. An additional layer 400 is disposed on the reflective layer 300. The additional layer 400 covers the reflective layer 300. The additional layer 400 includes particles. The diameter of the particles is 5-30 microns. The particles comprise polymethyl methacrylate, polystyrene and SiO₂And TiO₂One or a combination of several of them. The shape of the particles comprises one or more of a regular geometric figure and an irregular geometric figure. Regular geometric figures such as triangles, squares, rectangles, diamonds, parallelograms, circles, and the like. The additional layer 400 has a second via 401. The first via 390 is connected to the second via 401 to expose the thin-film transistor layer 200.

In this application, combine the reflection stratum structure with the additional layer, when light passes through the reflection stratum, light reaches the additional layer after the reflection of reflection stratum, and light has solved the problem of reflection stratum structure specular reflection through the effect of reflection, refraction and the scattering of additional layer, has improved the homogeneity of light, and then has improved display panel's performance.

The mini light emitting diode 500 is disposed in the first through hole 390 and the second through hole 401 to electrically connect the thin-film transistor layer 200.

The mini led 500 may be a blue mini led.

In another embodiment, the bottom of the mini led 500 is provided with a metal paste layer 600. The material of the metal paste layer 600 includes one or a combination of several of Sn, In, Bi, Cu, Al, and Mo. In this embodiment, the metal paste layer is a tin paste layer. The metal paste layer has adhesiveness and fluidity, and the mini light emitting diode 500 is disposed on the metal paste layer 600 by using the fluidity and adhesiveness of the metal paste layer 600, and then the metal paste layer 600 is cured, so that the mini light emitting diode 500 is fixed on the metal paste layer 600, and thus the mini light emitting diode 500 is fixed on the thin film transistor layer 200. The mini light emitting diode 500 provided with the metal paste layer 600 is disposed in the first through hole 390 and the second through hole 401. The mini led 500 is electrically connected to the thin film transistor layer 200.

In this application, set up on the metal paste layer mini emitting diode, utilize the mobility and the adhesion on metal paste layer, later solidification metal paste layer, and then will mini emitting diode is fixed in on the thin film transistor layer, avoid mini emitting diode to lose at preparation or the in-process of using, influenced display panel's performance.

The application provides a display panel, in the display panel, combine the reflector layer with the additional layer, the structure of reflector layer sets to be formed by two kinds of different refractive index materials, when light passes through the reflector layer, because light that each layer reflects back carries out constructive interference because of the change of phase angle, then combine together each other, obtain strong reverberation, then, the reverberation passes through the additional layer, through the reflection of additional layer, scattering and refraction effect, make the even falling of light in the display panel, improve the homogeneity of light, and improved the reflectivity of light, and then improved the luminous efficacy and the light utilization ratio of mini emitting diode, and reduced the consumption, and then improved the performance of display panel, and reduced the preparation cost of display panel, and, the reflector layer blue light reflectivity is high, can regard as the speculum of blue light, quantum dot displays that combine with quantum dots to form a high color gamut,

referring to fig. 7, fig. 7 is a cross-sectional flow diagram illustrating a method for manufacturing a display panel according to the present disclosure. The present application further provides a method for manufacturing a display panel 10, including:

11. thin-film-transistor layer 200 is formed on substrate 100.

A substrate 100 is provided. The substrate 100 may be a glass substrate. Thin-film-transistor layer 200 is formed on substrate 100. The thin film transistor layer 200 includes a thin film transistor 210, and the thin film transistor 210 includes a gate 201, a first protective layer 202, a gate insulating layer 203, an active layer 204, a source electrode 205, a drain electrode 206, and a second protective layer 207. The first protective layer 202 covers the gate 201. The material of the gate 201 includes one or a combination of Mo, Al, Ti, In and Ga. The gate insulating layer 203 is disposed on the first protection layer 202. The material of the gate insulating layer 203 includes Al₂O₃SiOx and SiN_XOne or a combination of several of them. The active layer 204 is disposed on the gate insulating layer 203. The material of the active layer 204 includes amorphous silicon. The source 205 is disposed at one end of the gate insulating layer 203 and one end of the active layer 204. The drain electrode 206 is disposed at the other end of the gate insulating layer 203 and the other end of the active layer 204. The source 205 and the drain 206 are insulated from each other. The second protective layer 207 covers the source 205, the drain 206, and the gate insulating layer 203. The second protective layer 207 is used to protect the structure of the thin film transistor 210 from other structures or water and oxygen. The thin film transistor 210 includes other structures besides the structure shown in fig. 2, which are not listed here.

12. A plurality of first sub-layers 301 and a plurality of second sub-layers 302 are alternately stacked on the thin-film transistor layer 200 in sequence to form a reflective layer 300.

A first refractive index material and a second refractive index material are alternately deposited in layers on thin-film-transistor layer 200 to form a multilayer, layered reflective layer 300. The number of the reflective layers 300 is not limited. In this embodiment, the reflective layer 300 is layered into 8 layers. I.e. a total of 8 layers of two materials of different refractive index are alternately stacked. The same applies to the subsequent 6, 10 and 16 layers, and the reflective layer 300 includes a first layer 301, a second layer 302, a third layer 303, a fourth layer 304, a fifth layer 305, a sixth layer 306, a seventh layer 307 and an eighth layer 308. The first segment 301, the third segment 303, the fifth segment 305, and the seventh segment 307 are formed of the first refractive index material. The first, third, fifth and seventh sublayers 301, 303, 305, 307 have a thickness of 55-65 nm. The second segment 302, the fourth segment 304, the sixth segment 306, and the eighth segment 308 are formed of a second refractive index material. The second sublayer 302, the fourth sublayer 304, the sixth sublayer 306, and the eighth sublayer 308 have a thickness of 65 nanometers to 85 nanometers. The first refractive index material has a refractive index greater than the refractive index of the first refractive index material.

In another embodiment, the first refractive index material has a refractive index of 1.7-2.2. The second refractive index material has a refractive index of 1.35 to 1.55.

In another embodiment, the first refractive index material comprises SiN_x、TiO₂ZnS and Al₂O₃One or a combination of several of them. The second refractive index material comprises SiO₂And MgF₂One or a combination of both.

13. An additional layer 400 is formed on the reflective layer 300.

Particles are disposed on the reflective layer 300 to form an additional layer 400. The diameter of the particles is 5-30 microns. The particles comprise polymethyl methacrylate, polystyrene and SiO₂And TiO₂One or a combination of several of them. The shape of the particles includes regular geometric figures such as triangles, and irregular geometric figures,Square, rectangular, diamond, parallelogram, and circular, etc.

14. The reflective layer 300 and the additional layer 400 are etched to form a first via 390 and a second via 401.

The first via 390 is connected to the second via 401 to expose the thin-film transistor layer 200. The etching method is not limited, and the corresponding etching method can be adopted according to specific requirements.

15. Mini leds 500 are disposed in the first through hole 390 and the second through hole 401.

Specifically, the mini led 500 is disposed on a metal paste layer 600, and the mini led 500 having the metal paste layer 600 is disposed in the first through hole 390 and the second through hole 401. The mini led 500 may be a blue led. The mini led 500 is electrically connected to the thin film transistor layer 200. The material of the metal paste layer 600 includes one or a combination of several of Sn, In, Bi, Cu, Al, and Mo. In this embodiment, the metal paste layer 600 is a tin paste layer.

In this application, utilize the mobility and the adhesion nature on metal paste layer, set up on metal paste layer mini emitting diode, later solidification metal paste layer, and then will mini emitting diode is fixed in on the thin film transistor layer, avoid mini emitting diode to lose at preparation or the in-process that uses, influenced display panel's performance.

The application provides a display panel and a preparation method thereof, in the preparation method of the display panel, the structure of the reflecting layer adopts two materials with different refractive indexes to be sequentially and alternately stacked on the thin film transistor layer.

The foregoing provides a detailed description of embodiments of the present application, and the principles and embodiments of the present application have been described herein using specific examples, which are presented solely to aid in the understanding of the present application. Meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.