阅读说明：本技术 一种熔融液体制备金属硅粉工艺 (Process for preparing metal silicon powder from molten liquid ) 是由 戴文伟 郑维江 胡满根 林霞 郑智雄 于 2020-06-12 设计创作，主要内容包括：本发明公开一种熔融液体制备金属硅粉工艺,涉及一种熔融液体制备金属硅粉工艺,涉及硅生产工艺领域,包括：首先,配料完后经混料后加入半封闭式矿热炉的炉内通电加热；然后,采集料面热红外图像,获取料面各个像素点位置的热红外温度,生成搅拌时长,控制料面搅拌装置对矿热炉的料面进行搅拌；最后,待半封闭式矿热炉的炉内反应时长达到预设反应时长,则开启出硅口放出硅液并铸成硅锭,经过破碎后形成金属硅粉。本发明通过热红外采集料面温度,当料面存在低温区域,则该区域开始存在板结可能,需要进行搅拌,以便避免料面板结,保持良好透气性,排除反应气体并有利于反应往生产硅的方向进行。(The invention discloses a process for preparing metal silicon powder by using molten liquid, relates to the field of silicon production processes, and comprises the following steps: firstly, after batching, adding the mixture into a semi-closed submerged arc furnace for electrifying and heating; then, collecting a charge level thermal infrared image, acquiring thermal infrared temperature of each pixel point position of the charge level, generating stirring time, and controlling a charge level stirring device to stir the charge level of the submerged arc furnace; and finally, when the reaction time length in the semi-closed submerged arc furnace reaches the preset reaction time length, opening a silicon outlet to discharge silicon liquid and cast the silicon liquid into a silicon ingot, and crushing the silicon ingot to form the metal silicon powder. According to the invention, the charge level temperature is acquired through thermal infrared, when the charge level has a low-temperature region, the region begins to have hardening possibility, and stirring is needed, so that the charge level is prevented from hardening, good air permeability is kept, reaction gas is exhausted, and the reaction is favorably carried out in the direction of producing silicon.)

1. The process for preparing metal silicon powder from molten liquid is characterized by comprising the following steps of:

s1, obtaining the batching ratio of the smelting alloy, and weighing and batching the raw materials of the silica, the charcoal and the petroleum coke according to the requirement of the batching ratio;

step S2, after the materials are mixed, adding the mixed materials into a furnace of a semi-closed submerged arc furnace, and carrying out power-on heating on the semi-closed submerged arc furnace;

step S3, when the temperature in the semi-closed submerged arc furnace is higher than a first preset temperature, starting a thermal infrared imaging module arranged above the semi-closed submerged arc furnace, and controlling the thermal infrared imaging module to acquire a thermal infrared image of the charge level of the semi-closed submerged arc furnace;

step S4, according to the thermal infrared image, acquiring the thermal infrared temperature T of each pixel point position (x, y) of the charge level of the semi-closed submerged arc furnace_(x,y)；

Step S5, according to the thermal infrared temperature T_(x,y)And a second predetermined thermal infrared temperature T_THAcquiring a first region set { Q) with the number of pixel points of the connected region in the thermal infrared image being more than or equal to N_i}; the first area set comprises all sub-areas, i is the number of the sub-areas, and N is a preset value;

step S6, responding to the first set of regions { Q }_iThe number of the sub-areas is larger than a first preset area S_THCounting the first region set { Q_iThe total area S of the first area set { Q } is counted_iMean value of infrared temperature of }According to the total area S and the infrared temperature mean value

and step S7, when the reaction time in the semi-closed submerged arc furnace reaches the preset reaction time, opening a silicon outlet to discharge silicon liquid and cast silicon ingots, and crushing the silicon ingots to form the metal silicon powder.

2. The process for preparing metallic silicon powder from molten liquid according to claim 1, wherein the stirring is for a long timeα is the weight coefficient of the total area S, α is more than 0, β is the infrared temperature mean valueβ < 0, t₀A reference time length of the stirring time length.

3. The process for preparing metallic silicon powder from molten liquid according to claim 1, wherein the first predetermined area S is larger than the first predetermined area S_THTotal charge level area S at the charge level_faceThe proportion of the components is 7.5 to 12.5 percent.

Technical Field

The invention relates to the field of industrial silicon manufacturing, in particular to a process for preparing metal silicon powder from molten liquid.

Background

Metallic silicon, also known as crystalline or industrial silicon, is used primarily as an additive to non-ferrous alloys. The metallic silicon is a product smelted by quartz and coke in an electric heating furnace, the content of a main component silicon element is about 98 percent (in recent years, the silicon element with the Si content of 99.99 percent is also contained in the metallic silicon), and the rest impurities are iron, aluminum, calcium and the like.

In the prior art, in the metal silicon smelting process, the silicon material surface is stirred manually, so that the labor cost is increased on one hand, and on the other hand, protective equipment is required to be added to improve the safety of workers.

Disclosure of Invention

In view of a part of defects in the prior art, the technical problem to be solved by the present invention is to provide a process for preparing metal silicon powder from molten liquid, which aims to identify a charge level through thermal infrared imaging and perform automatic stirring, so as to reduce unsafety caused by manual charge level inspection.

In order to achieve the purpose, the invention provides a process for preparing metal silicon powder by using molten liquid, which comprises the following steps:

s1, obtaining the batching ratio of the smelting alloy, and weighing and batching the raw materials of the silica, the charcoal and the petroleum coke according to the requirement of the batching ratio;

step S2, after the materials are mixed, adding the mixed materials into a furnace of a semi-closed submerged arc furnace, and carrying out power-on heating on the semi-closed submerged arc furnace;

step S3, when the temperature in the semi-closed submerged arc furnace is higher than a first preset temperature, starting a thermal infrared imaging module arranged above the semi-closed submerged arc furnace, and controlling the thermal infrared imaging module to acquire a thermal infrared image of the charge level of the semi-closed submerged arc furnace;

step S4, according to the thermal infrared image, acquiring the thermal infrared temperature T of each pixel point position (x, y) of the charge level of the semi-closed submerged arc furnace_(x,y)；

Step S5 according toThe thermal infrared temperature T: (_x,y) And a second predetermined thermal infrared temperature T_THAcquiring a first region set { Q) with the number of pixel points of the connected region in the thermal infrared image being more than or equal to N_i}; the first area set comprises all sub-areas, i is the number of the sub-areas, and N is a preset value;

step S6, responding to the first set of regions { Q }_iThe number of the sub-areas is larger than a first preset area S_THCounting the first region set { Q_iThe total area S of the first area set { Q } is counted_iMean value of infrared temperature of }According to the total area S and the infrared temperature mean valueGenerating stirring time t, and controlling a charge level stirring device to stir the charge level of the semi-closed submerged arc furnace; wherein the stirring time t is positively correlated with the total area S, and the stirring time is in direct correlation with the infrared temperature mean valueNegative correlation;

and step S7, when the reaction time in the semi-closed submerged arc furnace reaches the preset reaction time, opening a silicon outlet to discharge silicon liquid and cast silicon ingots, and crushing the silicon ingots to form the metal silicon powder.

In the technical scheme, the charge level temperature is collected through thermal infrared, when the charge level has a low-temperature area, the area begins to have the possibility of hardening, stirring is needed, so that the charge level is prevented from hardening, good air permeability is kept, reaction gas is exhausted, and the reaction is favorably carried out in the direction of producing silicon; in this embodiment, the first region set { Q) including the low temperature region is used as the basis_iJudging the integral hardening degree of the charge level by the total area so as to control the stirring duration; and the lower the temperature of the hardened area, the longer the stirring time required.

In one embodiment, the stirring is for a long timeα is the weight coefficient of the total area S, α is more than 0, β is the infrared temperature mean value

β < 0, t₀A reference time length of the stirring time length.

In the technical scheme, the correlation between the stirring time and the area of a low-temperature area (hardening) is fully considered, and meanwhile, the longer the stirring time is required when the temperature of the low-temperature area is lower, so that the stirring time is effectively generated, the hardening of a charge level is avoided, good air permeability is kept, reaction gas is discharged, and the reaction is favorably carried out in the direction of producing silicon.

In one embodiment, the first predetermined area S_THTotal charge level area S at the charge level_faceThe proportion of the components is 7.5 to 12.5 percent.

In the technical scheme, by setting the first preset area, when the low-temperature area on the charge level exceeds 7.5-12.5% of the total charge level area, and then stirring the charge level, under the proportion, on one hand, the charge level is prevented from being hardened, good air permeability is kept, reaction gas is exhausted, and the reaction is favorably carried out in the direction of producing silicon; on the other hand, a layer of protective layer covers the charge level in a hardened low-temperature area of the charge level to a certain extent, so that the solution heat loss of the semi-closed submerged arc furnace is reduced, and the energy is saved.

The invention has the beneficial effects that: 1) according to the invention, the charge level temperature is collected through thermal infrared, when the charge level has a low-temperature area, the area begins to have the possibility of hardening, and stirring is needed, so that the charge level is prevented from hardening, good air permeability is kept, reaction gas is exhausted, and the reaction is favorably carried out in the direction of producing silicon; 2) the invention is based on a first set of regions comprising a low temperature zone { Q_iJudging the integral hardening degree of the charge level by the total area so as to control the stirring duration; and hardeningThe lower the zone temperature, the longer the stirring period required.

Drawings

Fig. 1 is a schematic flow chart of a process for preparing metal silicon powder from molten liquid according to an embodiment of the present invention.

Detailed Description

The invention is further illustrated by the following examples in conjunction with the accompanying drawings:

in a first embodiment of the present invention, as shown in fig. 1, there is provided a process for preparing silicon metal powder from a molten liquid, the process comprising:

s1, obtaining the batching ratio of the smelting alloy, and weighing and batching the raw materials of the silica, the charcoal and the petroleum coke according to the requirement of the batching ratio;

step S2, after the materials are mixed, adding the mixed materials into a furnace of a semi-closed submerged arc furnace, and carrying out power-on heating on the semi-closed submerged arc furnace;

step S3, when the temperature in the semi-closed submerged arc furnace is higher than a first preset temperature, starting a thermal infrared imaging module arranged above the semi-closed submerged arc furnace, and controlling the thermal infrared imaging module to acquire a thermal infrared image of the charge level of the semi-closed submerged arc furnace;

step S4, according to the thermal infrared image, acquiring the thermal infrared temperature T of each pixel point position (x, y) of the charge level of the semi-closed submerged arc furnace_(x,y)；

Step S5, according to the thermal infrared temperature T: (_x,y) And a second predetermined thermal infrared temperature T_THAcquiring a first region set { Q) with the number of pixel points of the connected region in the thermal infrared image being more than or equal to N_i}; the first area set comprises all sub-areas, i is the number of the sub-areas, and N is a preset value;

step S6, responding to the first set of regions { Q }_iThe number of the sub-areas is larger than a first preset area S_THCounting the first region set { Q_iThe total area S of the first area set { Q } is counted_iMean value of infrared temperature of }

According to the total area S and the infrared temperature mean valueGenerating stirring time t, and controlling a charge level stirring device to stir the charge level of the semi-closed submerged arc furnace; wherein the stirring time t is positively correlated with the total area S, and the stirring time is in direct correlation with the infrared temperature mean valueNegative correlation;

and step S7, when the reaction time in the semi-closed submerged arc furnace reaches the preset reaction time, opening a silicon outlet to discharge silicon liquid and cast silicon ingots, and crushing the silicon ingots to form the metal silicon powder.

In this embodiment, the stirring period is long

α is the weight coefficient of the total area S, α is more than 0, β is the infrared temperature mean value

β < 0, t₀A reference time length of the stirring time length.

In this embodiment, the first predetermined area S_THTotal charge level area S at the charge level_faceThe proportion of the components is 7.5 to 12.5 percent. Optionally, the first preset area S_THTotal charge level area S at the charge level_faceThe ratio of the above is 10%.

The foregoing detailed description of the preferred embodiments of the invention has been presented. It should be understood that numerous modifications and variations could be devised by those skilled in the art in light of the present teachings without departing from the inventive concepts. Therefore, the technical solutions available to those skilled in the art through logic analysis, reasoning and limited experiments based on the prior art according to the concept of the present invention should be within the scope of protection defined by the claims.