阅读说明：本技术 在机台零件上形成纳米涂层的方法及纳米涂层 (Method for forming nano coating on machine part and nano coating ) 是由 蔡佩勋 于 2021-07-16 设计创作，主要内容包括：本发明提供一种在机台零件上形成纳米涂层的方法,包括：清洁零件表面；提供类金刚石离子束,利用PVD工艺将类金刚石离子束沉积至零件表面,形成第一膜层；提供TiN和CrN离子束,利用PVD工艺将TiN和CrN离子束沉积至第一膜层表面,形成第二膜层；提供TiCN和TiClN离子束,利用PVD工艺将TiCN和TiClN离子束沉积至第二膜层表面,形成第三膜层；第一膜层、第二膜层和第三膜层形成纳米涂层。本发明利用PVD工艺在零件表面依序附着类金刚石的第一膜层、含TiN和CrN的第二膜层和含TiCN和TiClN的第三膜层,形成纳米级的膜层,该膜层密度大,结构紧凑,能够降低杂质颗粒的附着力,同时提高该纳米涂层的耐高温、耐腐蚀性能。(The invention provides a method for forming a nano coating on a machine table part, which comprises the following steps: cleaning the surface of the part; providing a diamond-like ion beam, and depositing the diamond-like ion beam on the surface of the part by using a PVD (physical vapor deposition) process to form a first film layer; providing TiN and CrN ion beams, and depositing the TiN and CrN ion beams to the surface of the first film layer by utilizing a PVD (physical vapor deposition) process to form a second film layer; providing TiCN and TiClN ion beams, and depositing the TiCN and TiClN ion beams to the surface of the second film layer by using a PVD (physical vapor deposition) process to form a third film layer; the first film layer, the second film layer and the third film layer form a nano-coating. According to the invention, the PVD process is utilized to sequentially attach the diamond-like first film layer, the second film layer containing TiN and CrN and the third film layer containing TiCN and TiClN to the surface of the part to form the nanoscale film layer, the film layer has high density and compact structure, the adhesive force of impurity particles can be reduced, and the high temperature resistance and corrosion resistance of the nano coating can be improved.)

1. A method of forming a nanocoating on a table part, comprising:

cleaning the surface of the part;

providing a diamond-like ion beam, and depositing the diamond-like ion beam on the surface of the part by using a PVD (physical vapor deposition) process to form a first film layer;

providing TiN and CrN ion beams, and depositing the TiN and CrN ion beams to the surface of the first film layer by utilizing a PVD (physical vapor deposition) process to form a second film layer;

providing TiCN and TiClN ion beams, and depositing the TiCN and TiClN ion beams to the surface of the second film layer by using a PVD (physical vapor deposition) process to form a third film layer;

the first, second, and third film layers form the nanocoating.

2. The method of claim 1, wherein said providing the diamond-like ion beam comprises:

providing diamond-like carbon particles which are melted at high temperature, and dissociating the diamond-like carbon particles into the diamond-like carbon ion beams by utilizing radio frequency current.

3. The method of claim 1, wherein the depositing the diamond-like ion beam to the part surface using a PVD process, forming a first film layer comprises:

heating the part to 130-180 ℃;

and depositing the diamond-like carbon ion beam on the surface of the part by using the PVD process, and forming the first film layer when the part is cooled to 60-90 ℃.

4. The method of claim 1, wherein the providing the TiN and CrN ion beam comprises:

providing high-temperature molten TiN and CrN particles, and dissociating the TiN and CrN particles into TiN and CrN ion beams by utilizing radio frequency current.

5. The method of claim 1, wherein the ion beam depositing the TiN and CrN onto the first film layer surface using a PVD process, forming a second film layer comprises:

heating the part to 60-100 ℃;

and depositing the TiN and CrN ion beams to the surface of the first film layer by utilizing the PVD process to form the second film layer.

6. The method of claim 1, wherein said providing a TiCN and TiClN ion beam comprises:

providing high temperature molten TiCN and TiClN particles, and dissociating the TiCN and TiClN particles into TiCN and TiClN ion beams by using radio frequency current.

7. The method of claim 1, wherein the depositing TiCN and TiClN ion beams to the second film layer surface using a PVD process, forming a third film layer comprises:

heating the part to 60-100 ℃;

and depositing the TiCN and TiClN ion beams to the surface of the second film layer by utilizing the PVD process to form the third film layer.

8. The method of claim 1, wherein the first film layer has a thickness of 0.1 to 1 μm, the second film layer has a thickness of 5 to 8 μm, and the third film layer has a thickness of 2 to 6 μm.

9. The method of claim 1, wherein the nanocoating has a thickness of 0.1 μ ι η to 7 μ ι η.

10. The method of claim 1, wherein cleaning the surface of the part comprises:

placing the part in an alkaline solution, removing oil stains on the surface of the part, and washing the part by using clear water;

placing the part in an acid solution, removing stains on the surface of the part, neutralizing the stains with residual alkaline substances, and washing the part by using clean water;

placing the part in acetone, and cleaning the part by using talcum powder;

and scrubbing the part for later use.

11. The method of claim 1, wherein prior to depositing the diamond-like ion beam onto the part surface using a PVD process to form a first film layer, further comprising:

and blowing the clean part surface by using inert gas, and baking the part to raise the temperature to 70-90 ℃.

12. The method of claim 11, wherein the depositing the diamond-like ion beam to the diamond using a PVD process is performedPart surface, and vacuumizing to 4 when the TiN and CrN ion beams are deposited to the first film layer surface by the PVD process and the TiCN and TiClN ion beams are deposited to the second film layer surface by the PVD process^-2～4.5^-2And (6) handkerchief.

13. The method of claim 12, wherein a vacuum is maintained at 2.5 degrees celsius when forming a first film layer after depositing the diamond-like ion beam on the surface of the part, a second film layer after depositing the TiN and CrN ion beam on the surface of the first film layer, and a third film layer after depositing the TiCN and TiClN ion beam on the surface of the second film layer^-1～2.9^-1And (6) handkerchief.

14. The method of claim 1, wherein the PVD process comprises: at least one of vacuum evaporation coating, vacuum sputtering ion coating, and vacuum ion coating.

15. The utility model provides a nanometer coating which characterized in that coats on board part, nanometer coating includes:

a first film layer deposited on a surface of the part, the material of the first film layer comprising diamond-like carbon;

a second film layer deposited on the first film layer, wherein the material of the second film layer comprises TiN and CrN;

and the third film layer is deposited on the second film layer, and the material of the third film layer comprises TiCN and TiClN.

Technical Field

The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a nano coating on a machine table part and the nano coating.

Background

In the manufacture of semiconductors, a deposition process is usually performed on a wafer, for example, the wafer is placed on a susceptor of a CVD apparatus, and a CVD process (chemical vapor deposition) is used to deposit a corresponding functional layer on the wafer. Because the cleanliness requirement of the semiconductor manufacturing on the environment is very high, parts in the machine need to be cleaned before deposition.

Currently, the NF is generally treated₃And dissociating to remove impurities attached to the surface of the part, and purging the surface of the machine part by using inert gas to separate the impurities from the surface of the part and pumping away the impurities by using a suction pump. However, although this method can remove most of the impurities, some impurity particles remain on the surface of the component and cannot be completely removed, and the impurity particles may affect the yield of semiconductor manufacturing.

The above information disclosed in this background section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not constitute prior art that is already known to a person of ordinary skill in the art.

Disclosure of Invention

The invention mainly aims to provide a method for forming a nano coating on a machine table part, which can form the nano coating with higher density, high temperature resistance and corrosion resistance on the surface of the part and more effectively prevent impurity particles from attaching to the surface of the part.

Another object of the present invention is to provide a nano-coating, which is applied to the surface of a part, and can effectively prevent the surface of the part from being attached with impurity particles, and simultaneously improve the high temperature resistance and corrosion resistance of the part.

According to one aspect of the present invention, there is provided a method of forming a nanocoating on a table part, comprising: cleaning the surface of the part; providing a diamond-like ion beam, and depositing the diamond-like ion beam on the surface of the part by using a PVD (physical vapor deposition) process to form a first film layer; providing TiN and CrN ion beams, and depositing the TiN and CrN ion beams to the surface of the first film layer by utilizing a PVD (physical vapor deposition) process to form a second film layer; providing TiCN and TiClN ion beams, and depositing the TiCN and TiClN ion beams to the surface of the second film layer by using a PVD (physical vapor deposition) process to form a third film layer; the first, second, and third film layers form the nanocoating.

According to an exemplary embodiment of the invention, the providing the diamond-like ion beam comprises: providing diamond-like carbon particles which are melted at high temperature, and dissociating the diamond-like carbon particles into the diamond-like carbon ion beams by utilizing radio frequency current.

According to an exemplary embodiment of the invention, the depositing the diamond-like ion beam to the surface of the part by using a PVD process, the forming a first film layer comprises: heating the part to 130-180 ℃; and depositing the diamond-like carbon ion beam on the surface of the part by using the PVD process, and forming the first film layer when the part is cooled to 60-90 ℃.

According to an exemplary embodiment of the present invention, the providing the TiN and CrN ion beam comprises: providing high-temperature molten TiN and CrN particles, and dissociating the TiN and CrN particles into TiN and CrN ion beams by utilizing radio frequency current.

According to an exemplary embodiment of the invention, the depositing the ion beam of TiN and CrN to the surface of the first film layer by using a PVD process, and the forming a second film layer comprises: heating the part to 60-100 ℃; and depositing the TiN and CrN ion beams to the surface of the first film layer by utilizing the PVD process to form the second film layer.

According to an exemplary embodiment of the present invention, the providing of the TiCN and TiClN ion beams comprises: providing high temperature molten TiCN and TiClN particles, and dissociating the TiCN and TiClN particles into TiCN and TiClN ion beams by using radio frequency current.

According to an exemplary embodiment of the present invention, the depositing TiCN and TiClN ion beams to the surface of the second film by using a PVD process, and the forming a third film includes: heating the part to 60-100 ℃; and depositing the TiCN and TiClN ion beams to the surface of the second film layer by utilizing the PVD process to form the third film layer.

According to an exemplary embodiment of the present invention, the first film layer has a thickness of 0.1 to 1 μm, the second film layer has a thickness of 5 to 8 μm, and the third film layer has a thickness of 2 to 6 μm.

According to an exemplary embodiment of the present invention, the nano-coating layer has a thickness of 0.1 μm to 7 μm.

According to an exemplary embodiment of the invention, the cleaning the part surface comprises: placing the part in an alkaline solution, removing oil stains on the surface of the part, and washing the part by using clear water; placing the part in an acid solution, removing stains on the surface of the part, neutralizing the stains with residual alkaline substances, and washing the part by using clean water; placing the part in acetone, and cleaning the part by using talcum powder; and scrubbing the part for later use.

According to an exemplary embodiment of the invention, before the depositing the diamond-like carbon ion beam to the surface of the part by using a PVD process to form a first film layer, the method further includes: and blowing the clean part surface by using inert gas, and baking the part to raise the temperature to 70-90 ℃.

According to an exemplary embodiment of the invention, the depositing of the diamond-like ion beam to the part surface using a PVD process, the depositing of the TiN and CrN ion beams to the first film layer surface using a PVD process, and the depositing of the TiCN and TiClN ion beams to the second film layer surface using a PVD process are vacuumized to 4^-2～4.5^-2And (6) handkerchief.

According to an exemplary embodiment of the present invention, a degree of vacuum is maintained at 2.5 when a first film layer is formed after the diamond-like ion beam is deposited on the surface of the part, a second film layer is formed after the TiN and CrN ion beam is deposited on the surface of the first film layer, and a third film layer is formed after the TiCN and TiClN ion beam are deposited on the surface of the second film layer^-1～2.9^-1And (6) handkerchief.

According to an exemplary embodiment of the invention, the PVD process comprises: at least one of vacuum evaporation coating, vacuum sputtering ion coating, and vacuum ion coating.

According to another aspect of the present invention, there is provided a nano-coating applied to a machine part, the nano-coating comprising: a first film layer deposited on a surface of the part, the material of the first film layer comprising diamond-like carbon; a second film layer deposited on the first film layer, wherein the material of the second film layer comprises TiN and CrN; and the third film layer is deposited on the second film layer, and the material of the third film layer comprises TiCN and TiClN.

According to the technical scheme, the invention has at least one of the following advantages and positive effects:

a first film layer of diamond-like carbon, a second film layer containing TiN and CrN and a third film layer containing TiCN and TiClN are sequentially adhered to the surface of a part by utilizing a PVD (physical vapor deposition) process to form a nanoscale film layer, the film layer is high in density and compact in structure, the adhesion force of impurity particles can be reduced, and meanwhile, the high-temperature resistance and corrosion resistance of the nanoscale coating are improved.

Drawings

The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.

FIG. 1 is a flow chart illustrating a method of forming a nanocoating on a table part in accordance with an exemplary embodiment of the present invention;

FIG. 2 is a schematic diagram illustrating the formation of a first film layer on a surface of a part of a stage according to an exemplary embodiment of the present invention;

FIG. 3 is a schematic diagram illustrating the formation of a second film on a first film in accordance with an exemplary embodiment of the present invention;

fig. 4 is a schematic diagram illustrating the formation of a third film on the second film according to an exemplary embodiment of the invention.

Description of reference numerals:

1. a part; 2. a first film layer; 3. a second film layer; 4. and a third film layer.

Detailed Description

Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted.

In the following description of various exemplary embodiments of the disclosure, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration various exemplary structures in which aspects of the disclosure may be practiced. It is to be understood that other specific arrangements of parts, structures, example devices, systems, and steps may be utilized, and structural and functional modifications may be made without departing from the scope of the present disclosure. Moreover, although the terms "over," "between," "within," and the like may be used in this specification to describe various example features and elements of the disclosure, these terms are used herein for convenience only, e.g., in accordance with the orientation of the examples in the figures. Nothing in this specification should be construed as requiring a specific three dimensional orientation of structures in order to fall within the scope of this disclosure. Furthermore, the terms "first," "second," and the like in the claims are used merely as labels, and are not numerical limitations of their objects.

The flow charts shown in the drawings are merely illustrative and do not necessarily include all of the contents and operations/steps, nor do they necessarily have to be performed in the order described. For example, some operations/steps may be decomposed, and some operations/steps may be combined or partially combined, so that the actual execution sequence may be changed according to the actual situation.

In addition, in the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise. "above" and "below" are terms of art that indicate orientation, and are used for clarity of description only and are not limiting.

According to one aspect of the invention, embodiments of the invention provide a method of forming a nanocoating on a machine part. As shown in fig. 1, a flow diagram of the method is shown. As shown in fig. 2 to 4, which respectively show schematic views of forming a first film layer 2, a second film layer 3 and a third film layer on a stage part.

As shown in fig. 1, a method for forming a nano-coating on a machine part 1 according to an embodiment of the present invention includes:

step S200: the surface of the part 1 is cleaned.

Step S400: providing a diamond-like carbon ion beam, and depositing the diamond-like carbon ion beam on the surface of the part 1 by using a PVD process to form a first film layer 2.

Step S600: and providing TiN and CrN ion beams, and depositing the TiN and CrN ion beams to the surface of the first film layer 2 by utilizing a PVD (physical vapor deposition) process to form a second film layer 3.

Step S800: providing TiCN and TiClN ion beams, and depositing the TiCN and TiClN ion beams on the surface of the second film layer 3 by using a PVD (physical vapor deposition) process to form a third film layer 4; the first 2, second 3 and third 4 membrane layers form a nanocoating.

In the method, the first film layer 2 of diamond-like carbon, the second film layer 3 containing TiN and CrN and the third film layer 4 containing TiCN and TiClN are sequentially adhered to the surface of the part 1 by utilizing a PVD (physical vapor deposition) process to form the nano film layer, the film layer has high density and a compact structure, the adhesive force of impurity particles can be reduced, and the high temperature resistance and the corrosion resistance of the nano coating are improved.

The method for forming a nano-coating on the machine part 1 according to the embodiment of the present invention will be described in detail.

It should be noted that the tool in the embodiments of the present invention may refer to a tool used in a semiconductor process, such as a CVD process tool. The machine platform comprises a cavity, wherein parts such as a base, a spray head and the like are arranged in the cavity, when a deposition process is carried out, a wafer is placed on the base, and the spray head is utilized to carry out the deposition process on the surface of the wafer. The machine parts of the embodiments of the present invention may include a base, a showerhead, and other parts located in the chamber, which are not limited herein.

Step S200: the surface of the part 1 is cleaned.

Before the surface of the part 1 is coated, the surface of the part 1 needs to be cleaned so that the coating can be stably formed on the surface of the part 1. In particular, the surface cleaning of the part 1 may comprise:

step S201: and (3) placing the part 1 in an alkaline solution, removing oil stains on the surface of the part 1, and washing the part 1 by using clean water.

Wherein the alkaline solution may be Na₂CO₃Or ammonia solution with concentration lower than 5%. The surface of the part 1 is cleaned by the alkaline solution, and organic matters such as oil stains on the surface of the part 1 can be effectively removed. The clean water can adopt high-purity deionized water to avoid introducing other impurities.

Step S202: and (3) placing the part 1 in an acid solution, removing surface stains of the part 1, neutralizing the surface stains with residual alkaline substances, and washing the part 1 by using clean water.

Wherein the acidic solution can be a hydrochloric acid solution, a sulfuric acid solution or a nitric acid solution, and the concentration of each is less than 5%. The acidic solution can not only neutralize the alkaline substance remaining on the surface of the component 1, but also remove inorganic compounds, such as various metal oxides, adhering to the surface of the component 1. Meanwhile, the concentration of the acid solution is controlled to be lower than 5%, so that the surface of the part 1 can be prevented from being damaged due to corrosion of the acid solution on the surface of the part 1. The clean water can adopt high-purity deionized water to avoid introducing other impurities.

Step S202: part 1 was placed in acetone and part 1 was cleaned with talc.

Acetone is an organic solvent, can dissolve most nonpolar substances, has a boiling point of 56 ℃, and has strong volatility. Therefore, by placing the component 1 in an acetone solvent, it is possible to further remove nonpolar impurities attached to the surface of the component 1, and since acetone is volatile, acetone is quickly volatilized after the component 1 is taken out from the acetone, and it is not necessary to remove acetone again by other means.

The talcum powder has physical properties of lubricity, strong adsorption force and the like, and the chemical activity of the talcum powder is not high. The surface of the part 1 is cleaned by the talc powder, and the residual impurities on the surface of the part 1 can be further adsorbed.

Step S202: the part 1 is scrubbed for use.

In this step, the surface of the part 1 may be rinsed with high-purity deionized water while being brushed with a dust-free brush to clean the surface of the part 1.

After the surface of the part 1 is cleaned, the surface is purged by inert gas, and impurity particles attached to the surface are further removed. The inert gas may be Ar, N₂Or NF₃And is not particularly limited herein. In the purging process, the part 1 is baked and heated to 70 ℃ to 90 ℃, for example, the temperature can be raised to 75 ℃, 80 ℃ or 85 ℃, which is not particularly limited, and provides a good adhesion environment for the first film layer 2 to be formed later.

Step S400: providing a diamond-like carbon ion beam, and depositing the diamond-like carbon ion beam on the surface of the part 1 by using a PVD process to form a first film layer 2.

Wherein providing the diamond-like ion beam comprises: diamond-like carbon (DLC) particles melted at a high temperature are provided, and the Diamond-like particles are dissociated into Diamond-like ion beams by Radio Frequency current (Radio Frequency).

Diamond-like carbon (DLC), also known as i-carbon, is a class of amorphous hard carbon with very high sp3/sp2 values and has the properties of high hardness, high electrical resistivity, low friction, chemical inertness and good thermal conductivity. The film is deposited on the surface of the part 1 as a bottom film by using a PVD (physical vapor deposition) process, can be well attached to the surface of the part 1, and is suitable for process conditions in a semiconductor manufacturing process.

Depositing a diamond-like ion beam on the surface of the part 1 by using a PVD process, and forming a first film layer 2 comprises:

heating the part 1 to 130-180 ℃. Specifically, the temperature may be 140 ℃, 150 ℃, 160 ℃, 170 ℃ or 175 ℃, and is not particularly limited herein. By heating the part 1 to any one of the above temperatures and maintaining the temperature stable, a film layer with good quality can be formed on the surface of the part 1 by performing the deposition process. Of course, the temperature can be in a range, such as 150 ℃ to 155 ℃, which is as small as possible, so that the temperature change is as small as possible, thereby maintaining the temperature stability, improving the film forming quality and reducing the severity of the process conditions.

And depositing a diamond-like ion beam on the surface of the part 1 by using a PVD (physical vapor deposition) process, and forming a first film layer 2 when the part 1 is cooled to 60-90 ℃.

After the diamond-like ion beam is deposited on the surface of the part 1 by the PVD process, the part 1 is stopped from being heated, and the part 1 is slowly cooled to 60 to 90 ℃, specifically, 65 ℃, 70 ℃, 75 ℃, 80 ℃ or 85 ℃, which is not limited herein. After the part 1 deposited with the first film layer 2 is cooled to the above temperature, the first film layer 2 is favorably stably attached to the surface of the part 1.

The thickness of the first film layer 2 according to the embodiment of the present invention may be 0.1 to 1 μm, specifically, 0.2 μm, 0.4 μm, 0.5 μm, 0.7 μm, 0.8 μm, or 0.9 μm, and the thickness of the first film layer 2 is thin, so that the first film layer 2 can be stably attached to the surface of the component 1.

Step S600: and providing TiN and CrN ion beams, and depositing the TiN and CrN ion beams to the surface of the first film layer 2 by utilizing a PVD (physical vapor deposition) process to form a second film layer 3.

Wherein providing TiN and CrN ion beams comprises: providing high-temperature molten TiN particles and CrN particles, and dissociating the TiN particles and CrN particles into TiN and CrN ion beams by utilizing radio frequency current. Specifically, high-temperature molten particles of TiN and CrN are dissociated by radio frequency current to form a solution containing Ti³⁺And Cr³⁺The ion beam of (1).

Wherein, utilize the PVD technology with TiN and CrN ion beam deposition to first rete 2 surface, form second rete 3 includes:

heating the part 1 to 60-100 ℃.

And depositing TiN and CrN ion beams on the surface of the first film layer 2 by using a PVD (physical vapor deposition) process to form a second film layer 3.

The temperature of the part 1 is raised to 60 ℃ to 100 ℃, specifically, the temperature can be 70 ℃, 80 ℃, 85 ℃, 90 ℃ or 95 ℃, and is not particularly limited. By heating the part 1 to any one of the above temperatures and maintaining the temperature stable, a film layer with good quality can be formed on the surface of the part 1 by performing the deposition process. Of course, the temperature may be in a range, such as 70 ℃ to 75 ℃, which is as small as possible, so that the temperature variation is as small as possible to maintain the temperature stable, improve the film forming quality, and reduce the severity of the process conditions.

After TiN and CrN ion beams are deposited on the surface of the part 1 by using a PVD process, heating of the part 1 is stopped, and the part 1 is slowly cooled to a lower temperature, specifically, 50 ℃, 55 ℃ or 60 ℃, which is not particularly limited herein. After the part 1 deposited with the second film 3 is cooled to the above temperature, the second film 3 is favorably stably attached to the first film 2.

In the second film layer 3, TiN can effectively improve the hardness of the second film layer 3, and CrN can effectively improve the corrosion resistance of the second film layer 3, so that the second film layer 3 has better friction resistance and chemical corrosion resistance.

The thickness of the second film layer 3 in the embodiment of the present invention may be 5 to 7 μm, and specifically, may be 5.5 μm, 6 μm, or 6.5 μm. Since the second film 3 is located between the first film 2 and the third film 4, and the films have better bonding force, the second film 3 has better stability relative to other films, and in order to enable the nano-coating to have better corrosion resistance and wear resistance, the thickness of the second film 3 may be larger than those of other films.

Step S800: providing TiCN and TiClN ion beams, and depositing the TiCN and TiClN ion beams on the surface of the second film layer 3 by using a PVD (physical vapor deposition) process to form a third film layer 4; the first 2, second 3 and third 4 membrane layers form a nanocoating.

Wherein providing the TiCN and TiClN ion beams comprises: providing high temperature molten TiCN and TiClN particles, and dissociating the TiCN and TiClN particles into TiCN and TiClN ion beams by using radio frequency current.

Depositing TiCN and TiClN ion beams on the surface of the second film layer 3 by using a PVD (physical vapor deposition) process, and forming the third film layer 4 comprises the following steps:

heating the part 1 to 60-100 ℃.

Specifically, the temperature may be 70 ℃, 80 ℃, 85 ℃, 90 ℃ or 95 ℃, and is not particularly limited herein. By heating the part 1 to any one of the above temperatures and maintaining the temperature stable, a film layer with good quality can be formed on the surface of the part 1 by performing the deposition process. Of course, the temperature may be in a range, such as 70 ℃ to 75 ℃, which is as small as possible, so that the temperature variation is as small as possible to maintain the temperature stable, improve the film forming quality, and reduce the severity of the process conditions.

After depositing TiCN and TiClN ion beams on the surface of the second film layer 3 by using a PVD (physical vapor deposition) process to form a third film layer 4, stopping heating the part 1, and slowly cooling the part 1 to a lower temperature, specifically, 50 ℃, 55 ℃ or 60 ℃, which is not particularly limited herein. After the part 1 deposited with the third film layer 4 is cooled to the temperature, the third film layer 4 is favorably and stably attached to the second film layer 3.

In the third film layer 4, TiCN has a wear resistance property and TiClN has a high temperature resistance property, and therefore, the third film layer 4 has better wear resistance and high temperature resistance.

The thickness of the third film layer 4 in the embodiment of the present invention may be 2 to 6 μm, and specifically, may be 3 μm, 3.5 μm, 4 μm, or 5 μm. Because the third film layer 4 is located on the second film layer 3, the bonding force between the film layers is better, and the third film layer 4 has better stability relative to the first film layer 2, therefore, the thickness of the third film layer 4 is greater than that of the first film layer 2. In addition, the third film layer 4 forms a surface layer of the nano coating, and needs to be in direct contact with the external environment, and the thickness of the third film layer 4 may be smaller than that of the second film layer 3.

The first, second and third film layers 2, 3, 4 formed in the above-described method collectively form a nanocoating that adheres to the surface of the part 1. The total thickness of the nano-coating layer may be 0.1 μm to 7 μm, and specifically, may be 0.5 μm, 1 μm, 3 μm, 5 μm, or 6 μm, which is not particularly limited herein.

In the method, when the diamond-like carbon ion beam is deposited on the surface of the part 1 by the PVD process, the TiN and CrN ion beams are deposited on the surface of the first film layer 2 by the PVD process, and the TiCN and TiClN ion beams are deposited on the surface of the second film layer 3 by the PVD process, the deposition environment needs to be vacuumized to 4 DEG^-2～4.5^-2And (6) handkerchief. E.g. by evacuation to 4.1^-2Pa, 4.3^-2Pa or 4.4^-2Pa, this is not a specific limitation, this documentThe technical personnel in the field can set according to the actual situation.

In the above method, the degree of vacuum is maintained at 2.5 in forming the first film layer 2 after depositing the diamond-like ion beam on the surface of the part 1, in forming the second film layer 3 after depositing the TiN and CrN ion beams on the surface of the first film layer 2, and in forming the third film layer 4 after depositing the TiCN and TiClN ion beams on the surface of the second film layer 3^-1～2.9^-1Pa, specifically, may be 2.6^-1Handkerchief, 2.7^-1Handkerchief or 2.8^-1And (6) handkerchief.

In the method of the present invention, the PVD process may be at least one of vacuum evaporation coating, vacuum sputter ion coating, and vacuum ion coating. Preferably, vacuum sputtering ion plating is adopted, materials of each film layer are ionized, and then the film is formed through sputtering, so that the microstructure of each film layer is optimized, the structure of each film layer is more compact, the molecular weight of molecules of the film layers is improved, the density of the film layers is improved, and impurity particles are not easy to attach to the surface of the coating.

According to the method for forming the nano coating on the machine table part 1, the first film layer 2 of diamond-like carbon, the second film layer 3 containing TiN and CrN and the third film layer 4 containing TiCN and TiClN are sequentially adhered to the surface of the part 1 by a PVD deposition method through dissociation, so that the microstructure of each film layer is more compact, the molecular distance is smaller, the density is higher, the adhesion space of impurity particles is reduced, the possibility of storing dirt and containing dirt is reduced, the impurity particles cannot be easily adhered to the surface of the nano coating, and therefore the impurity particles can be easily separated from the nano coating through blowing or cleaning. Meanwhile, each film layer of the nano coating is made of a material with high circuit rate, corrosion resistance, wear resistance and high temperature resistance, so that the nano coating is very suitable for the process conditions of a semiconductor manufacturing process, and the service life of the part 1 is prolonged.

According to another aspect of the present invention, a nano-coating is provided to be coated on the machine part 1. The nanocoating is made by the method described in any of the above embodiments. The nanocoating includes: a first film layer 2, a second film layer 3 and a third film layer 4. Wherein, the first film layer 2 is deposited on the surface of the part 1, and the material of the first film layer 2 comprises diamond-like carbon. The second film 3 is deposited on the first film 2, and the material of the second film 3 includes TiN and CrN. A third film layer 4 is deposited on the second film layer 3, the material of the third film layer 4 comprising TiCN and TiClN. The nano coating is coated on the surface of the part 1, so that impurity particles can be effectively prevented from being attached to the surface of the part 1, and the high-temperature resistance and corrosion resistance of the part 1 are improved.

It is to be understood that the invention is not limited in its application to the details of construction and the arrangement of components set forth in the description. The invention is capable of other embodiments and of being practiced and carried out in various ways. The foregoing variations and modifications fall within the scope of the present invention. It will be understood that the invention disclosed and defined in this specification extends to all alternative combinations of two or more of the individual features mentioned or evident from the text and/or drawings. All of these different combinations constitute alternative aspects of the present invention. The embodiments described in this specification illustrate the best mode known for carrying out the invention and will enable those skilled in the art to utilize the invention.