阅读说明：本技术 化学品递送系统及操作所述化学品递送系统的方法 (Chemical delivery system and method of operating the same ) 是由 大卫·詹姆斯·埃尔德里奇 大卫·彼得斯 小罗伯特·赖特 布赖恩·C·亨德里克斯 斯科特·L· 于 2018-12-07 设计创作，主要内容包括：本发明涉及一种化学品递送系统。所述化学品递送系统包含散装容器、运行/再填充腔室、第一导管及第二导管。所述散装容器存储前体。所述运行/再填充腔室包含多个间隔开的管,所述多个间隔开的管具有多个表面,所述多个表面用于以蒸汽形式接收所述前体并以固体形式存储所述前体。所述第一导管将所述散装容器连接到所述运行/再填充腔室,用于以蒸汽形式将所述前体从所述散装容器输送到所述运行/再填充腔室。所述第二导管将所述运行/再填充腔室连接到沉积腔室,用于以蒸汽形式将所述前体从所述运行/再填充腔室输送到所述沉积腔室。(The present invention relates to a chemical delivery system. The chemical delivery system includes a bulk container, a run/refill chamber, a first conduit, and a second conduit. The bulk container stores the precursor. The run/refill chamber contains a plurality of spaced tubes having a plurality of surfaces for receiving the precursor in vapor form and storing the precursor in solid form. The first conduit connects the bulk container to the run/refill chamber for transporting the precursor in vapor form from the bulk container to the run/refill chamber. The second conduit connects the run/refill chamber to a deposition chamber for transporting the precursor in vapor form from the run/refill chamber to the deposition chamber.)

1. A method of operating a chemical delivery system comprising at least one bulk container, at least one run/refill chamber, and at least one deposition chamber, the method comprising:

storing a precursor in at least one of the bulk containers;

transferring the precursor in vapor form from the bulk container to a first run/refill chamber;

receiving the precursor in vapor form in the first run/refill chamber;

condensing the precursor and storing the precursor in solid form in the first run/refill chamber;

causing sublimation of the solid precursor within the first run/refill chamber; and

the sublimated precursor is transported in vapor form from the first run/refill chamber to a first deposition chamber.

2. The method of claim 1, further comprising:

transferring the precursor in vapor form from the bulk container to a second run/refill chamber;

receiving the precursor in vapor form in the second run/refill chamber; and

condensing the precursor and storing the precursor in the second run/refill chamber in solid form.

3. The method of claim 2, wherein the solid precursor is sublimated within the first run/refill chamber while the precursor is received in vapor form in the second run/refill chamber.

4. The method of claim 2, further comprising:

causing sublimation of the solid precursor within the second run/refill chamber; and

transporting the sublimated precursor in vapor form from the second run/refill chamber to the first deposition chamber.

5. The method of claim 4, wherein the solid precursor is sublimated within the second run/refill chamber while the precursor is received in vapor form in the first run/refill chamber.

6. The method of claim 2, further comprising:

causing sublimation of the solid precursor within the second run/refill chamber; and

transporting the sublimated precursor in vapor form from the second run/refill chamber to a second deposition chamber.

7. The method of claim 2, wherein the transporting the precursor from the bulk container to the first run/refill chamber in vapor form alternates with transporting the precursor from the bulk container to the second run/refill chamber in vapor form.

8. The method of claim 1, wherein at least one of the run/refill chambers includes a plurality of spaced tubes having a plurality of surfaces configured to receive the precursor in vapor form and store the precursor in solid form.

9. The method of claim 1, wherein the precursor stored in the bulk container is in solid form in the bulk container.

10. The method of claim 1, wherein delivering the precursor in vapor form comprises heating the bulk container to sublimate the precursor and delivering the vapor through a heated conduit.

11. The method of claim 1, wherein storing the precursor in solid form comprises storing the precursor in a manufacturing area, and storing the precursor in the bulk container comprises storing the precursor outside of the manufacturing area.

12. The method of claim 1, wherein

Transferring the precursor in vapor form from the bulk container to the first run/refill chamber comprises heating the bulk container and transferring the vapor in a first heating conduit;

condensing the precursor and storing the precursor in the first run/refill chamber in solid form comprises cooling the first run/refill chamber; and

transporting the sublimated precursor in vapor form from the first run/refill chamber to a first deposition chamber includes heating the first run/refill chamber and transporting the vapor in a second heating conduit.

13. A chemical delivery system, comprising:

at least one bulk container configured to store a precursor;

at least one run/refill chamber configured to receive the precursor in vapor form and store the precursor in solid form;

at least one deposition chamber configured to receive a sublimated precursor from the run/refill chamber;

a first conduit connecting the bulk container to the run/refill chamber for transporting the precursor in vapour form from the bulk container to the run/refill chamber; and

a second conduit for transporting a sublimated precursor in vapor form from the run/refill chamber to the deposition chamber.

14. The chemical delivery system of claim 13, wherein the bulk container is configured to store the precursor in solid form and is heated to sublimate the precursor.

15. The chemical delivery system of claim 13, wherein the first conduit and the second conduit are configured to be heated.

16. The chemical delivery system of claim 13, wherein the run/refill chamber is located in a manufacturing area and the bulk container is located outside of the manufacturing area.

17. The chemical delivery system of claim 13, wherein at least one of the run/refill chambers includes a plurality of spaced tubes having a plurality of surfaces configured to receive the precursor in vapor form and store the precursor in solid form.

18. The chemical delivery system of claim 17, wherein each of the plurality of spaced-apart tubes has a circular cross-section, a rectangular cross-section, or a star-shaped cross-section.

19. The chemical delivery system of claim 16, wherein each of the plurality of spaced apart tubes is filled with a foam.

20. The chemical delivery system of claim 16, wherein the plurality of spaced apart tubes are surrounded by a chamber configured to receive a heat transfer fluid.

Technical Field

The present invention relates generally to a chemical delivery system, and more particularly to a chemical delivery system for use in a chemical vapor deposition process.

Background

A more specific subclass of CVD is atomic layer deposition (A L D). in A L D, two precursors are typically used and deposited on the wafer in an alternating manner.

Disclosure of Invention

The present invention generally relates to a method of operating a chemical delivery system for delivering precursors during a CVD process. The system includes at least one bulk container, at least one run/refill chamber, and at least one deposition chamber. In some embodiments, the method includes a first conduit and a second conduit. The bulk container is configured to store a precursor, preferably in solid form. The run/refill chambers may be used alternately. In one embodiment, the run/refill chamber includes a plurality of spaced-apart tubes having a plurality of surfaces configured to receive the precursor in vapor form and store the precursor in solid form. The first conduit connects the bulk container to the run/refill chamber for transporting the precursor in vapor form from the bulk container to the run/refill chamber. The second conduit is for transporting the precursor in vapor form from the run/refill container to a deposition chamber.

The bulk container is configured to store the precursor in solid form. The bulk container has a high surface area and is preferably on a scale to monitor the amount of precursor remaining during operation. The bulk container is preferably located in a sub-manufacturing area where replacement of the container is facilitated.

The chemical delivery system is configured to heat the bulk container to sublimate the precursor, thereby converting the precursor into a vapor form. The chemical delivery system is also configured to heat the first conduit to maintain the precursor in vapor form.

In one embodiment, the run/refill chamber is located on a manufacturing floor area, commonly referred to as a "manufacturing (fab"), and the bulk container is located outside of the manufacturing. For example, the bulk container may be located in a sub-manufacturing area.

In one illustrative embodiment, each of the plurality of spaced-apart tubes has a circular or rectangular cross-section. In other embodiments, each of the plurality of spaced-apart tubes has a star-shaped cross-section. Preferably, each of the plurality of spaced apart tubes is filled with foam. In some embodiments, the plurality of spaced-apart tubes are surrounded by a chamber configured to receive a heat transfer fluid.

The run/refill chamber may be configured to hold an amount of the precursor sufficient for a single deposition cycle. Alternatively, the run/refill chamber may be configured to hold an amount of the precursor sufficient for a plurality of deposition cycles.

The foregoing summary is provided to facilitate an understanding of some of the innovative features unique to the present invention and is not intended to be a full description. A full appreciation of the invention can be gained by taking the entire specification, claims, drawings, and abstract as a whole.

Drawings

The invention may be more completely understood in consideration of the following description of various illustrative embodiments in connection with the accompanying drawings, in which:

FIG. 1 is a schematic illustration of a first CVD system constructed in accordance with the present invention;

FIG. 2 is a schematic view of a second CVD system constructed in accordance with the present invention;

FIG. 3 is a schematic view of a third CVD system constructed in accordance with the present invention;

fig. 4 is a side cross-section of a first run/refill chamber constructed in accordance with the present invention;

fig. 5 is a side cross-section of a second run/refill chamber constructed in accordance with the invention;

fig. 6 is a top cross-section of a first run/refill chamber;

fig. 7 is a top cross-section of a third run/refill chamber constructed in accordance with the invention; and

fig. 8 is a top cross-section of a fourth run/refill chamber constructed in accordance with the invention.

While the invention is susceptible to various modifications and alternative forms, specifics thereof have been shown by way of example in the drawings and will be described in detail. It should be understood, however, that there is no intention to limit aspects of the invention to the specific illustrative embodiments described. On the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

Detailed Description

As used in this specification and the appended claims, the singular forms "a", "an", and "the" include plural referents unless the content clearly dictates otherwise. As used in this specification and the appended claims, the term "or" is generally employed in its sense including "and/or" unless the content clearly dictates otherwise.

The following detailed description should be read with reference to the drawings, in which like elements in different drawings are numbered the same. The detailed description and drawings, which are not necessarily to scale, depict illustrative embodiments and are not intended to limit the scope of the invention. The depicted illustrative embodiments are intended to be exemplary only. Selected features of any illustrative embodiment may be incorporated into additional embodiments unless explicitly stated to the contrary.

Referring first to FIG. 1, a CVD system 100 constructed in accordance with the present invention is shown, one part of the system 100 is located in a sub-fabrication area 101, the sub-fabrication area 101 is hereinafter referred to as a sub-fabrication, and another part is located in a fabrication area or floor 102, the fabrication area or floor 102 is shown enclosed by dashed lines, hereinafter referred to as a fabrication, these parts are connected by a heating steam supply line (or first conduit) 105. the bulk bin 110 is preferably located in the sub-fabrication, but may be located at a more remote location the bulk bin 110 contains first and second bulk bins 115 and 116. preferably, the bulk bins 115 and 116 and their internal support structures are made of electropolished 316L stainless steel.316 316L stainless steel is preferably coated with a thin film of a material that is more resistant to each particular chemical (e.g., nickel, alumina, etc.. alternatively, a metal alloy material may be employed.inconel, hastelloy C276, C22, alloy 20, etc. are examples of such alloys, further, different materials may be employed. 316L, and the bulk bins may be made of stainless steel and the more resistant alloys may be made of the internal support structures made of more resistant or more resistant alloys.

Precursor 120 is stored in solid form within bulk container 115 and precursor 121 is stored in solid form within bulk container 116. Precursors 120 and 121 are typically the same material, although different reference numbers are used. For example, in use, the bulk container 115 is used until the precursor 120 is depleted. The bulk container 116 is then used while the bulk container 115 is replaced or refilled. After the precursor 121 is exhausted, the bulk container 115 is used while the bulk container 116 is replaced or refilled. Thus, there is no down time for this portion of the process. The first scale unit 125 and the second scale unit 126 are configured to weigh the bulk containers 115 and 116 to provide information about the amount of precursor 120 remaining within the bulk container 115 and the amount of precursor 121 remaining within the bulk container 116. Connecting lines 127 and 128 allow precursor vapor to exit the bulk containers 115 and 116. The bulk containers 115 and 116 may also employ additional monitoring features to monitor multiple temperature zones, vacuum levels, mass flux rates to the first conduit 105, internal/external filtration, internal/external purification, impurity levels, and the like. Programmable logic controller 130 controls manifold 135 to regulate the delivery of precursors 120 and 121 from bulk containers 115 and 116 to the fabrication site. Specifically, precursors 120 and 121 are heated in bulk containers 115 and 116 to cause sublimation, and the resulting vapor is transported to fabrication 102 via vapor supply line 105, optionally using a carrier gas supplied by carrier gas supply apparatus 140. Preferably, the temperature of the precursor ranges from 80 to 250 degrees celsius. Supply line 105 is also preferably heated to a temperature at or above the precursor in bulk container 115 or 116 and monitored to measure the precursor delivery rate. Precursors 120 and 121 are typically not delivered through vapor supply line 105 at the same time. Instead, the precursors 120 and 121 are preferably delivered in an alternating manner, as discussed above. The purge gas supplied by purge gas supply 145 is used to purge the conduits (e.g., vapor supply line 105) through which precursors 120 and 121 pass. Purging is preferably performed by an automated cycle to remove potential chemical material from line 105 as it exits bulk containers 115 and 116 through connectors that are not individually labeled. Waste is removed from the manifold 135 through line 147 to a vacuum disposal unit 148. Line 147 may also be heated to limit condensation of waste products. As an alternative delivery method, bulk containers 115 and 116 may be used in series or in parallel using a suitable manifold device. The manifold device will still allow a single container to provide steam to the run/refill chamber while replacing another bulk container. The option of tandem or tandem delivery will allow for more complete consumption of the precursor while not affecting the amount of vapor available to run/refill the chamber. This alternative would reduce the amount of residual precursor in the bulk container and would improve the cost of ownership.

The processing system 150 is located in the fab 102 the processing system 150 includes a plurality of run/refill chambers 155-157 that receive precursors 120 and 121 from vapor supply lines 105 in particular, the precursors 120 and 121 enter the run/refill chambers 155-157 as vapors, and then are deposited within the run/refill chambers 155-157 as solids by cooling the run/refill chambers 155-157 for the purposes of the present invention, the term "deposition" and variants thereof refer to Chemical Vapor Deposition (CVD) processes whereby the precursor gases are chemically converted to solid films, rather than the more general action of placing objects at specific locations, the precursors 120 and 121 are stored in solid form within the run/refill chambers 155-157, when needed, by heating the corresponding run/refill chambers 155-157, subliming the precursors 120, 121 within one of the run/refill chambers 155-157, the run chambers 155-157 are preferably heated and cooled within a run mode to the chamber 120, a heat and cool down, preferably a heat and cool down, heat transfer to the deposition chamber 120, heat transfer chamber 120, heat transfer to the reactor, heat transfer chamber, heat transfer, and heat transfer to the deposition apparatus, heat transfer apparatus, and heat transfer apparatus, etc. the deposition apparatus 150, deposition apparatus, 150, deposition apparatus.

In one embodiment, each of the run/refill chambers 155-157 is sized to hold an amount of precursor 120 or 121 sufficient for one deposition cycle, rather than two deposition cycles. In other embodiments, each of the run/refill chambers 155-157 is sized to hold an amount of precursor 120 or 121 sufficient for multiple deposition cycles. For the purposes of the present invention, the term "deposition cycle" refers to the step used to deposit a single layer of precursor on a substrate. Although the run/refill chambers 155 to 157 are labeled with different reference numbers, the run/refill chambers 155 to 157 may be identical to each other.

For the purposes of the present invention, the term "run/refill" means "run and/or refill". When the chamber (e.g., chamber 155) is in its lower temperature setting, the chamber is being refilled and vapor is entering via vapor supply line 105 and condensing on the high surface area interior. Then, when the chamber is at its higher temperature setting, the chamber is running and solids that have condensed during the refill portion of the cycle are vaporized and the vapor is delivered to the deposition chamber via a line (not labeled). In other words, the term "run/refill chamber" indicates that the chamber serves as both a run chamber and a refill chamber. The run/refill chamber may incorporate filtration, purification, pressure/vacuum monitoring and delivery rate or solid film sensing. The run/refill chamber is preferably designed to cycle for each wafer, or one "refill" of the run/refill chamber is designed to provide vapor for two or more wafers before "refilling" again.

Referring now to fig. 2, a CVD system 200 constructed in accordance with the present invention is shown. CVD system 200 functions in generally the same manner as CVD system 100, except that CVD system 200 has one run/refill chamber per deposition chamber. Specifically, the processing system 250 includes a plurality of run/refill chambers 255-257 that receive precursors 120 and 121 from the vapor supply line 105. The precursors 120 and 121 enter the run/refill chambers 255-257 as vapors, and then are deposited as solids within the run/refill chambers 255-257 by cooling the run/refill chambers 255-257. When desired, the precursor 120 or 121 is sublimated within the run/refill chambers 255-257 by heating one of the run/refill chambers 255-257. The precursor 120 or 121 is then delivered to a corresponding one of a plurality of deposition chambers 260-262. The precursors 120 or 121 are used to deposit films on substrates (not shown) located within corresponding deposition chambers 260-262. An optional carrier gas supply 270 may be used to deliver the precursors 120 and 121 within the processing system 250, while a controller 275 controls the processing system 250. More specifically, controller 275 is connected to meters 263 through 265 by control lines 276. The controller 275 is also connected to control valves 295 to 297 via line 277 and is capable of measuring and controlling the pressure in the chambers 260 to 262 by opening valves 295 to 297, which results in vacuum 298. The purge gas supplied by the purge gas supply apparatus 280 is used to purge the operation/refill chambers 255 to 257.

Fig. 3 shows a CVD system 300 constructed in accordance with the invention. CVD system 300 functions generally in the same manner as CVD systems 100 and 200, except that CVD system 300 includes a plurality of processing systems 350 through 352. Each processing system 350-352 includes run/refill chambers 355-357 that receive precursors 120 and 121 from vapor supply line 105. The precursors 120 and 121 enter the run/refill chambers 355-357 as vapors, and then are deposited as solids within the run/refill chambers 355-357 by cooling the run/refill chambers 355-357. When desired, the precursor 120 or 121 is sublimated within the run/refill chambers 355-357 by heating one of the run/refill chambers 355-357. The precursor 120 or 121 is then delivered to the corresponding deposition chamber 360 to 362. The precursor 120 or 121 is used to deposit a film on a substrate (not shown) located within the deposition chambers 360-362. Optional carrier gas supply apparatuses 370-372 may be used to transport the precursors 120 and 121 within the processing systems 350-352, while controllers 375-377 control the processing systems 350-352. More specifically, the controllers 375-377 are connected to the meters 363-365 by control lines, where the lines 378-383 are labeled. The controllers 375-377 are also connected to control valves 395-397 and are able to measure and control the pressure in the chambers 360-362 by opening valves 395-397, which results in a vacuum at 398-400. The purge gas supplied by the purge gas supply means 380 to 382 is used to purge the operation/refill chambers 355 to 357.

Turning to fig. 4, a cross-section of a run/refill chamber 400 constructed in accordance with the present invention is provided. The run/refill chamber 400 includes manifolds 405 and 406. Precursor (not shown) enters the run/refill chamber 400 as a vapor through an inlet 410, the inlet 410 being connected to a manifold 405. The inlet 410 will also be connected to a steam supply line, such as steam supply line 105 (not shown). The precursor exits the run/refill chamber 400 as a vapor through an outlet 411, the outlet 411 being connected to the manifold 406. The outlet 411 will also be connected to a deposition chamber, such as deposition chamber 160, via a second conduit (e.g., as shown in fig. 1). Purge and carrier gases may enter the run/refill chamber 400 through the manifold 405, but the inlets are not visible. The run/refill chamber 400 also contains a plurality of tubes 420 through 425 in which the precursors are stored. Specifically, the precursor passes through the inlet 410 and manifold 405 as a vapor and condenses within the tubes 420-425 as a solid. To achieve this phase change, the tubes 420 to 425 are cooled using a heat transfer fluid 430, the heat transfer fluid 430 being located in a chamber 435 surrounding the tubes 420 to 425. The heat transfer fluid 430 may be a liquid or a gas. Chamber 435 is at least partially defined by side wall 4 of run/refill chamber 40040, and 441. Heat transfer fluid 430 enters chamber 435 through inlet 445 and exits chamber 435 through outlet 446. When sublimation of the precursor is desired, tubes 420 through 425 are heated using another heat transfer fluid (not shown) that enters chamber 435 through inlet 450 and exits chamber 435 through outlet 451. Such as nitrogen (N)₂) Or Clean Dry Air (CDA) displacement gas may be used to separate the two temperatures of the heat transfer fluid. Displacement gas enters chamber 435 through inlet 415 and exits chamber 435 through outlet 416. Preferably, the tubes 420 to 425 are filled with foam 455, the foam 455 being chemically compatible with the precursors used. For example, the foam 455 may be a nickel foam, an aluminum foam, or a graphite foam. The foam 455 also has a high surface area and a high heat transfer rate, which facilitates deposition and sublimation of the precursor.

Although the run/refill chamber 400 is described as being heated and cooled using a heat transfer fluid, run/refill chambers constructed according to the present disclosure may be heated and cooled by other means. For example, resistive heating elements and peltier devices may be used. In addition, other agents that increase surface area, such as beads or raschig rings, may be used in place of the foam 455.

Referring now to fig. 5, a cross-section of a run/refill chamber 500 constructed in accordance with the present invention is provided. The run/refill chamber 500 includes manifolds 505 and 506. Precursor (not shown) enters run/refill chamber 500 through inlet 510, inlet 510 being connected to manifold 505. The inlet 510 will also be connected to a steam supply line, such as steam supply line 105 (not shown). The precursor exits the run/refill chamber 500 through an outlet 511, the outlet 511 being connected to a manifold 506. The outlet 511 will also be connected to a deposition chamber, such as deposition chamber 160, via a conduit (not shown). Purge and carrier gases may enter the run/refill chamber 500 through the manifold 505, but the inlets are not visible. The run/refill chamber 500 also contains a plurality of tubes 520 to 525 in which the precursors are stored. Specifically, the precursor passes through the inlet 510 and manifold 505 as a vapor and is deposited as a solid within the tubes 520-525. Preferably, the tubes 520 to 525 are filled with foam 555, the foam 555 being chemically compatible with the precursors used. For example, foam 555 may be a nickel foam, an aluminum foam, or a graphite foam. The foam 555 also has a high surface area and high heat transfer rate, which aids in deposition and sublimation of the precursor.

The run/refill chamber 500 generally functions in the same manner as the run/refill chamber 400 except that a temperature differential or gradient is provided along the length of the tubes 520 to 525 to prevent excessive accumulation of precursor at the ends of the tubes 520 to 525 closest to the inlet 510. In particular, this is achieved by: the central portions of the tubes 520 to 525 are surrounded by an insulator 560 while a temperature difference is established between the inlet and outlet ends of the tubes 520 to 525 by using the heat transfer fluid 530 at two different temperatures. Specifically, during the refill or condensing portion of the cycle, the ends of the tubes 520-525 toward the inlet 510 are maintained at a higher temperature than the ends of the tubes 520-525 toward the outlet 511. An insulator 560 is located in first chamber 535, first chamber 535 being at least partially defined by sidewalls 540 and 541 of run/refill chamber 500. The heat transfer fluid 530 is located in a second chamber 536 surrounding the ends of the tubes 520 to 525 closest to the inlet 510 and a third chamber 537 surrounding the ends of the tubes 520 to 525 closest to the outlet 511. Chambers 536 and 537 are also at least partially defined by sidewalls 540 and 541. The heat transfer fluid 530 enters the second chamber 536 through an inlet 545 and exits the second chamber 536 through an outlet 546. Similarly, the heat transfer fluid 530 enters the third chamber 537 through an inlet 565 and exits the third chamber 537 through an outlet 566. When sublimation of the precursor is desired, tubes 520-525 are heated using another heat transfer fluid (not shown) that enters second chamber 536 through inlet 550 and exits second chamber 536 through outlet 551. This other heat transfer fluid also enters the third chamber 537 through inlet 570 and exits the third chamber 537 through outlet 571.

Preferably, the portion of the heat transfer fluid delivered to the second chamber 536 is at a different temperature than the portion of the heat transfer fluid delivered to the third chamber 537. This may be accomplished, for example, by providing additional heating or cooling to one portion of the heat transfer fluid. Alternatively, rather than delivering the same heat transfer fluid to both the second chamber 536 and the third chamber 537, different heat transfer fluids may be delivered to the second chamber 536 and the third chamber 537. In either case, the result is independent temperature control, which allows for more uniform condensation and sublimation along the length of the tubes 520-525. For example, during deposition, the heat transfer fluid in the second chamber 536 may be relatively cooler than the heat transfer fluid in the third chamber 537. During sublimation, the heat transfer fluid in the second chamber 536 may be relatively hotter than the heat transfer fluid in the third chamber 537.

Turning to fig. 6, another cross-section of the run/refill chamber 400 is provided. This view highlights the shape of the tubes 420 to 425 and the chamber 435. Specifically, each of the tubes 420-425 has a circular cross-section. However, other arrangements may be used in a run/refill chamber constructed in accordance with the present invention. For example, fig. 7 shows a run/refill chamber 700 that includes a plurality of tubes 720-725 that each have a star-shaped cross-section. The use of a star-shaped cross-section rather than a circular cross-section provides more surface area for condensation and sublimation, as well as heat transfer. For completeness, heat transfer fluid 730, chamber 735, and sidewalls 740 and 741 are also labeled in FIG. 7.

Figure 8 shows another tube arrangement for running/refilling the chamber constructed in accordance with the invention. In particular, the run/refill chamber 800 includes tubes 820-824 having a rectangular cross-section. Each of the tubes 820-824 is relatively thin to provide more surface area. As with the other embodiments, tubes 820-824 are temperature controlled using a heat transfer fluid 830, the heat transfer fluid 830 being located in a chamber 835 defined at least in part by sidewalls 840 and 841.

While certain exemplary tube arrangements have been described, it should be recognized that there are a number of different ways to increase the available surface area within the tube of the run/refill chamber. For example, the tubes may comprise fins.

The operation of the run/refill chamber of the present invention may be understood using the following general example, in addition to the detailed description provided above, with the run/refill chamber at temperature T1, the delivery of a vapor/carrier gas mixture from a heated vapor supply line into the run/refill chamber inlet, as the mixed gas flows through the run/refill chamber tube, the solid precursor condenses onto the inner surface of the tube, this inner surface may be the tube itself or the foam fill surface.

In another example, the run/refill chamber is evacuated at a temperature T1. Next, steam is delivered from the heating steam supply line and the solid precursor is condensed in the run/refill chamber. This step is timed to provide the desired loading of the solid precursor on the interior of the run/refill chamber. Next, the supply to the run/refill chamber was shut off and the chamber was heated to a temperature T2. The carrier gas flows into the inlet of the run/refill chamber, the solid precursor sublimes, and the vapor is carried to the deposition chamber. At the end of the cycle, the exit of the run/refill chamber is isolated from the deposition chamber and the chamber is cooled to a temperature T1. The cycle is repeated as needed.

The temperature control of the run/refill chamber of the present invention can be understood using the following general example. With the starting state of the run/refill chamber at temperature T2, the heat transfer fluid at temperature T2 flows into the T2 supply and returns out of T2 to the reservoir which maintains the heat transfer fluid at temperature T2. When a rapid temperature change to temperature T1 is required, the T2 supply is turned off and the displacement gas pushes the heat transfer fluid at temperature T2 to T2 return. When most or enough of the heat transfer fluid at temperature T2 is removed, the T2 return is also closed, the T1 supply is turned on, and the displacement gas is allowed to flow back freely. When the chamber is filled with heat transfer fluid at temperature T1, the displacement gas return is turned off, and the T1 return allows heat transfer fluid at temperature T1 to return to the reservoir that maintains the heat transfer fluid at temperature T1. The heat transfer fluid at temperature T1 continues to flow through the run/refill chamber for the deposition portion of the operating cycle. A similar sequence is performed when the temperature of the run/refill chamber needs to be raised again to the temperature T2. The T1 supply was turned off and the displacement gas pushed the heat transfer fluid at temperature T1 to T1 back. When most or enough of the heat transfer fluid at temperature T1 is removed, the T1 return is also closed, the T2 supply is turned on, and the displacement gas is allowed to flow back freely. When the chamber is filled with heat transfer fluid at temperature T2, the displacement gas return is turned off, and the T2 return allows heat transfer fluid at temperature T2 to return to the reservoir that maintains the heat transfer fluid at temperature T2. The heat transfer fluid at temperature T2 continues to flow through the run/refill chamber for the sublimation portion of the operating cycle.

Having thus described several illustrative embodiments of the invention, it will be apparent to one skilled in the art that other embodiments may be made and used within the scope of the appended claims. Numerous advantages of the invention covered by this document have been set forth in the foregoing description. In particular, the present invention provides a chemical delivery system that efficiently, effectively, and consistently delivers solid precursors in a CVD process while minimizing the downtime of the CVD system and the amount of space occupied near the processing tool. It should be understood, however, that the present invention is, in many respects, only illustrative. Changes may be made in details, particularly in matters of shape, size, and arrangement of parts, without exceeding the scope of the invention. For example, the bulk container may contain a low vapor pressure liquid or a solid that melts in the bulk container to optimize vapor delivery or refilling of the bulk container. The scope of the invention is, of course, defined in the language in which the appended claims are expressed.