阅读说明：本技术 半导体装置以及其工作方法 (Semiconductor device and operating method thereof ) 是由 国武宽司 本田龙之介 热海知昭 于 2019-01-11 设计创作，主要内容包括：提供一种可以取得晶体管的阈值电压的半导体装置。半导体装置包括第一晶体管、第一电容器、第一输出端子、第一开关以及第二开关。第一晶体管的栅极与源极电连接。第一电容器的第一端子与源极电连接。第一电容器的第二端子及第一输出端子与第一晶体管的背栅极电连接。第一开关控制向背栅极的第一电压的输入。第一晶体管的漏极被输入第二电压。第二开关控制向源极的第三电压的输入。(A semiconductor device capable of obtaining a threshold voltage of a transistor is provided. The semiconductor device includes a first transistor, a first capacitor, a first output terminal, a first switch, and a second switch. The gate and the source of the first transistor are electrically connected. The first terminal of the first capacitor is electrically connected to the source. The second terminal and the first output terminal of the first capacitor are electrically connected to the back gate of the first transistor. The first switch controls input of a first voltage to the back gate. The drain of the first transistor is inputted with a second voltage. The second switch controls input of a third voltage to the source.)

1. A semiconductor device, comprising:

a first transistor;

a first capacitor;

a first output terminal;

a first switch; and

a second switch for controlling the operation of the switch,

wherein a gate and a source of the first transistor are electrically connected,

a first terminal of the first capacitor and the first output terminal are electrically connected to a back gate of the first transistor,

a second terminal of the first capacitor is electrically connected to the source,

the first switch controls input of a first voltage to the back gate,

a drain of the first transistor is inputted with a second voltage,

and the second switch controls input of a third voltage to the source.

2. The semiconductor device according to claim 1, wherein the first and second electrodes are formed on a substrate,

wherein the first switch and the second switch are transistors including a metal oxide in a channel formation region.

3. The semiconductor device according to claim 1, wherein the first and second electrodes are formed on a substrate,

wherein the first transistor is an n-channel type transistor,

the first to third voltages are constant voltages,

and the first transistor exhibits a normally-on characteristic, and the second voltage and the third voltage are set in such a manner that a voltage between the drain and the source is greater than 0V.

4. The semiconductor device according to claim 1, wherein the first and second electrodes are formed on a substrate,

wherein the first transistor is a p-channel type transistor,

the first to third voltages are constant voltages,

and the first transistor exhibits a normally-on characteristic, and the second voltage and the third voltage are set in such a manner that a voltage between the drain and the source is less than 0V.

5. The semiconductor device according to any one of claims 1 to 4, further comprising a second transistor having a back gate,

wherein a voltage input to a back gate of the second transistor varies according to a fourth voltage output from the first output terminal.

6. The semiconductor device according to any one of claims 1 to 4, further comprising a third transistor,

wherein a voltage input to a gate of the third transistor varies according to a fourth voltage output from the first output terminal.

7. The semiconductor device according to any one of claims 1 to 4, further comprising a second capacitor, a current-voltage conversion circuit, and an amplification circuit,

wherein a first terminal of the second capacitor is electrically connected with the first output terminal,

a second terminal of the second capacitor is electrically connected to an input terminal of the current-to-voltage conversion circuit,

and the amplification circuit amplifies the fifth voltage output from the current-voltage conversion circuit and outputs a sixth voltage.

8. The semiconductor device as set forth in claim 7,

wherein the current-to-voltage conversion circuit is a source follower circuit.

9. The semiconductor device as set forth in claim 7,

wherein the sixth voltage decreases as the temperature increases.

10. The semiconductor device according to any one of claims 7 to 9,

wherein the amplifying circuit is an operational amplifier.

11. The semiconductor device according to any one of claims 7 to 10, further comprising a fourth transistor having a back gate,

wherein a voltage input to a back gate of the fourth transistor varies according to the sixth voltage.

12. The semiconductor device according to any one of claims 7 to 10, further comprising a fifth transistor,

wherein a voltage input to a gate of the fifth transistor varies according to the sixth voltage.

13. A method of operating the semiconductor device according to any one of claims 1 to 12, comprising the steps of:

turning on the first switch and the second switch;

turning on the first switch and turning off the second switch;

turning off the first switch and turning off the second switch; and

the first switch is turned off and the second switch is turned on.

Technical Field

The present specification describes a semiconductor device, an operating method, a manufacturing method, and the like.

In this specification, a semiconductor device refers to a device utilizing semiconductor characteristics, and refers to a circuit including a semiconductor element (a transistor, a diode, a photodiode, or the like), a device including the circuit, or the like. The semiconductor device refers to any device that can function by utilizing semiconductor characteristics. Examples of the semiconductor device include an integrated circuit, a chip including an integrated circuit, and an electronic component in which a chip is housed in a package. In addition, the memory device, the display device, the light-emitting device, the lighting device, the electronic device, and the like are semiconductor devices themselves or include semiconductor devices in some cases.

Background

As a semiconductor which can be used for a transistor, a metal oxide is attracting attention. In-Ga-Zn oxides referred to as "IGZO" and the like are typical examples of the multi-component metal oxides. By studying IGZO, a CAAC (c-axis aligned crystalline) structure and nc (nanocrystalline) structure, which are neither single crystal nor amorphous, were found (for example, non-patent document 1).

It has been reported that a transistor including a metal oxide semiconductor in a channel formation region (hereinafter sometimes referred to as an "oxide semiconductor transistor" or an "OS transistor") has an extremely small off-state current (for example, non-patent documents 1 and 2). Various semiconductor devices using an OS transistor (for example, non-patent documents 3 and 4) are manufactured. The manufacturing process of the OS transistor may be integrated into the CMOS process of the conventional Si transistor, and the OS transistor may be stacked on the Si transistor (for example, non-patent document 4).

The Si transistor can easily control the threshold voltage by introducing impurities. On the other hand, a manufacturing technique with high reliability for controlling the threshold voltage of the OS transistor has not been established. Then, the threshold voltage of the OS transistor is controlled by providing a first gate electrode (also referred to as a gate or a front gate) and a second gate electrode (also referred to as a back gate) in the OS transistor and controlling the voltage of the second gate electrode (for example, patent document 1).

[ Prior Art document ]

[ patent document ]

[ patent document 1] Japanese patent application laid-open No. 2012-69932

[ non-patent document ]

[ non-patent document 1] S.Yamazaki et al, "Properties of crystalline In-Ga-Zn-oxide semiconductor and its transducer characteristics," Jpn.J.appl.Phys., vol.53, 04ED18(2014).

[ non-patent document 2] K.Kato et al, "Evaluation of Off-State Current measurements of Transistor Using Oxide Semiconductor Material, Indium-Gallium-Zinc Oxide," Jpn.J.appl.Phys., vol.51, 021201(2012).

[ non-patent document 3] S.Amano et al, "Low Power LC Display Using In-Ga-Zn-oxide TFTs Based on Variable Frame Frequency," SID Symp. dig. papers, vol.41, pp.626-629(2010).

Non-patent document 4 t, ishizu et al, "Embedded Oxide Semiconductor means: a KeyEnabler for Low-Power ULSI, "ECS Tran., vol.79, pp.149-156(2017).

Disclosure of Invention

Technical problem to be solved by the invention

An object of one embodiment of the present invention is to provide a semiconductor device capable of obtaining a threshold voltage of a transistor, to provide a semiconductor device in which performance variation due to temperature is suppressed, to provide a semiconductor device with high reliability, or to provide a semiconductor device with low power consumption, for example.

The description of multiple objects does not preclude the existence of multiple objects. It is not necessary for a mode of the invention to achieve all of the objectives illustrated. Further, objects other than the above-mentioned objects are naturally known from the description of the present specification and the like, and such objects may be objects of one embodiment of the present invention.

Technical problem to be solved by the invention

(1) One embodiment of the present invention is a semiconductor device including: the semiconductor device includes a first transistor, a first capacitor, a first output terminal, a first switch, and a second switch, wherein a gate of the first transistor is electrically connected to a source, a first terminal and a first output terminal of the first capacitor are electrically connected to a back gate of the first transistor, a second terminal of the first capacitor is electrically connected to the source, the first switch controls input of a first voltage to the back gate, a drain of the first transistor is input with a second voltage, and the second switch controls input of a third voltage to the source.

(2) An aspect of the present invention is a method of operating the semiconductor device according to the aspect (1), including: turning on the first switch and the second switch; turning on the first switch and turning off the second switch; turning off the first switch and turning off the second switch; and turning off the first switch and turning on the second switch.

In this specification and the like, ordinal numbers such as "first", "second", "third", and the like are sometimes attached to indicate order. In addition, ordinal numbers may be added to avoid confusion among constituent elements. In these cases, the ordinal number does not limit the number of components of one embodiment of the invention and does not limit the order. For example, one embodiment of the present invention can be described by changing "first" to "second" or "third".

The positional relationship of the components of one embodiment of the present invention is relative. Therefore, when the constituent elements are described with reference to the drawings, terms such as "upper" and "lower" indicating a positional relationship may be used for convenience. The positional relationship of the components is not limited to the contents described in the present specification, and words may be appropriately changed depending on the case.

In the present specification and the like, when it is described that "X and Y are linked", the following cases are also included in the scope of the disclosure of the present specification and the like: the case where X and Y are electrically connected; the case where X and Y are functionally linked; and X is directly linked to Y. Therefore, the connection relationships are not limited to the predetermined connection relationships such as those shown in the drawings or described herein, and connection relationships other than those shown in the drawings or described herein are also disclosed in the drawings or described herein. X and Y are both objects (e.g., devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.).

The voltage mostly refers to a potential difference between a certain potential and a reference potential (for example, a ground potential (GND) or a source potential). Thus, the voltage can be referred to as a potential. In addition, the potentials are relative. Therefore, even if the term "GND" is used, it does not necessarily mean 0V.

The node may be referred to as a terminal, a wiring, an electrode, a conductive layer, a conductor, an impurity region, or the like depending on a circuit structure, a device structure, or the like. In addition, a terminal, a wiring, or the like may be referred to as a node.

In this specification, "film" and "layer" may be interchanged with each other depending on the situation or state. For example, the "conductive layer" may be sometimes changed to a "conductive film". For example, the "insulating film" may be sometimes replaced with an "insulating layer".

In the drawings, the size, the thickness of layers, regions, and the like may be exaggerated for clarity. Therefore, the present invention is not necessarily limited to the above dimensions. In the drawings, desirable examples are schematically shown without being limited to the shapes, numerical values, and the like shown in the drawings. For example, unevenness of a signal, voltage, or current due to noise, timing deviation, or the like may be included.

Effects of the invention

In accordance with one embodiment of the present invention, a semiconductor device in which a threshold voltage of a transistor can be obtained, a semiconductor device in which performance variation due to temperature is suppressed, a semiconductor device with high reliability, or a semiconductor device with low power consumption can be provided.

The description of the plurality of effects does not hinder the existence of the effects of each other. In addition, one embodiment of the present invention does not necessarily have all of the above effects. Other objects, effects and novel features of the present invention in one aspect thereof will become apparent from the description and drawings in the specification.