阅读说明：本技术 电磁波屏蔽涂敷方法 (Electromagnetic wave shielding coating method ) 是由 崔仁圭 李起长 于 2019-08-02 设计创作，主要内容包括：本发明涉及一种电磁波屏蔽涂敷方法,作为在金属或非金属材料的表面进行电磁波屏蔽涂敷的方法,其中,包括：预处理步骤,对材料表面进行清洗,在涂敷之前,进行干式表面蚀刻；表面晶种置换成型步骤,在经预处理的表面形成金属晶种层；第一镀金步骤,利用第一金属来在晶种层表面进行无电解镀金,以实现基础屏蔽功能；以及第二镀金步骤,利用第二金属来在第一金属镀金层表面进行无电解镀金,以实现最终屏蔽功能,上述第一金属为铜,上述第二金属为钨,本发明提供的电磁波屏蔽涂敷方法可适用于智能汽车、移动设备及可穿戴设备的构件表面,具有优秀的电磁波屏蔽效果、涂敷耐久性,可缩短生产时间,费用方面的经济性优秀。(The present invention relates to an electromagnetic wave shielding coating method for performing electromagnetic wave shielding coating on the surface of a metal or nonmetal material, comprising: a pretreatment step, cleaning the surface of the material, and performing dry surface etching before coating; a surface seed crystal replacement molding step of forming a metal seed crystal layer on the pretreated surface; a first gold plating step of performing electroless gold plating on the surface of the seed layer using a first metal to realize a basic shielding function; and a second gold plating step of performing electroless gold plating on the surface of the first metal gold plating layer using a second metal to realize a final shielding function, wherein the first metal is copper, and the second metal is tungsten.)

1. An electromagnetic wave shielding coating method for performing electromagnetic wave shielding coating on the surface of a metal or nonmetal material,

the method comprises the following steps:

a pretreatment step, cleaning the surface of the material, and performing dry surface etching before coating;

a surface seed crystal replacement molding step of forming a metal seed crystal layer on the pretreated surface;

a first gold plating step of performing electroless gold plating on the surface of the seed layer using a first metal to realize a basic shielding function; and

a second gold plating step of performing electroless gold plating on the surface of the first metal gold plating layer by using a second metal to realize a final shielding function,

the first metal is copper, the second metal is tungsten,

in the above-mentioned first gold plating step, electroless gold plating is performed by immersing the surface of the seed layer-forming material in a copper chloride solution of 50 to 100g/L at a pH of 8 to 10 and a temperature of 20 to 40 ℃ for 1 to 10 minutes,

in the above-mentioned second gold plating step, electroless gold plating is performed by immersing the surface of the material forming the first gold plating layer in a 20g/L to 60g/L ammonium tungstate hydrate solution having a pH of 6 to 8 and a temperature satisfying 70 ℃ to 80 ℃ for 10 minutes to 50 minutes,

in the above-mentioned surface seed crystal substitution molding step,

the metal contained in the seed layer is nickel and iron,

at a temperature of 150 to 250 ℃ and a vacuum degree of 10^-5mmHg to 10^-3And performing metal plasma sputtering coating on the surface of the material for 1 to 15 minutes under the condition of mmHg.

2. The electromagnetic wave shield coating method as claimed in claim 1, wherein the thickness of the first gold-plating layer formed by said first gold-plating step is 0.05 μm to 5 μm.

3. The electromagnetic wave shield coating method as claimed in claim 1, wherein the thickness of the second gold-plating layer formed by said second gold-plating step is 1 μm to 10 μm.

4. The electromagnetic wave shielding coating method of claim 1, wherein the seed layer has a thickness of 0.05 μm to 5 μm.

5. The electromagnetic wave shield coating method according to claim 1, wherein said metallic or non-metallic material is selected from the group consisting of carbon fiber and epoxy molding compound in a semiconductor chip packaging process.

6. The electromagnetic wave shielding coating method according to claim 1, wherein the metal or nonmetal material is one selected from the group consisting of a member constituting a wearable device, a smart car, a smart phone, a communication device, and a notebook computer.

7. The electromagnetic wave shield coating method as claimed in claim 1, wherein said metal or non-metal material is one of members constituting an intelligent car.

Technical Field

The present invention relates to an electromagnetic wave shielding coating method for performing electromagnetic wave shielding coating on a surface of a metal or nonmetal material, the method comprising: a pretreatment step, cleaning the surface of the material, and performing dry surface etching before coating; a surface seed crystal replacement molding step of forming a metal seed crystal layer on the pretreated surface; a first gold plating step of performing electroless gold plating on the surface of the seed layer using a first metal to realize a basic shielding function; and a second gold plating step of performing electroless gold plating on a surface of the first metal gold plating layer using a second metal to realize a final shielding function, wherein the first metal is copper (Cu) and the second metal is tungsten (W), and the electromagnetic wave shielding coating method provided by the present invention is applicable to surfaces of members of smart cars, mobile devices, and wearable devices, has excellent electromagnetic wave shielding effect and coating durability, and can shorten production time and improve cost economy.

Background

It has been reported that electromagnetic waves cause various diseases including cancer, and the recognition of the harmful effects of electromagnetic waves is gradually strengthened by classifying electromagnetic waves as a cancer-inducing factor and specifying them as a substance likely to cause cancer by the international cancer research institution under the United Nations (UN). In addition, electromagnetic waves also affect other electronic devices in the vicinity, causing problems such as electromagnetic wave interference, errors of electronic devices due to noise, and signal quality degradation, and importance of the electromagnetic wave shielding function has been increasingly paid attention.

In modern society where the use of electronic devices is widely spread, the possibility of exposure to electromagnetic waves is more frequent, and various methods of blocking electromagnetic waves are also being studied. In addition, as various electronic devices have been developed, the frequency band of generated electromagnetic waves has become wider, and research on a method capable of blocking wider electromagnetic waves has been an item actively developed.

As one of the methods for blocking electromagnetic waves, a case made of a conductive material is formed on the surface of an electronic device to prevent electromagnetic waves from being released and transmitted to a human body, but this method has a problem of increasing the volume of the electronic device due to an unnecessary space formed between the case and a semiconductor chip, and the electromagnetic wave blocking case generating the unnecessary space is against the demand for miniaturization of the electronic device.

In order to solve such problems, a method of directly forming a metal coating layer for electromagnetic shielding on a member of an electronic device is employed. The electromagnetic wave shielding function is further improved as the amount and area of the conductive material increase with increasing conductivity, but there is a problem that the electromagnetic wave cannot be completely blocked on the surface of the component by sputter-coating a mixed solution containing highly conductive and highly corrosion resistant metal particles such as silver (Ag) and a binder on the surface of the component of the electronic device. Further, the use of highly conductive silver particles, which cannot completely block electromagnetic waves, increases the production cost as a rare metal, which causes an increase in the production cost of electronic devices having an electromagnetic wave blocking function.

In order to solve the above-described problems, an electromagnetic wave blocking coating method based on a sputtering method in which a thin metal film is directly formed on the surface of a member is used, but it takes a lot of time in a coating process to obtain an electromagnetic wave blocking effect in order to make the thickness of a coating layer thick, and thus there is a problem in that productivity is lowered.

Korean patent No. 10-1830059 relates to an electromagnetic wave shielding coating composition, which can be applied to an external layer of an electronic device, and includes a binder such as polyurethane, and further includes an organic ionic conductive agent, a dispersing solvent, a non-yellowing curing agent, and an additive to form a colorless coating film, thereby having an effect of controlling electromagnetic waves.

However, as described above, the present invention relates to an electromagnetic wave shielding coating composition for forming a plating film on the surface of an electronic device, that is, a coating composition containing a binder component, and has a problem that electromagnetic waves cannot be shielded on the front surface of the electronic device due to the binder component, and as a method for coating an external layer of an electronic device, there is a problem that an electromagnetic wave shielding effect is reduced as compared with a method for blocking electromagnetic waves in units of components of the electronic device.

On the other hand, korean laid-open patent No. 10-2016-.

However, the above-mentioned technique has a problem that the process is complicated because a plurality of metal layers need to be formed, and if a partial failure occurs in one of the plurality of layers or a uniform coating layer cannot be formed in a plating film and a coating layer formed by laminating a plurality of metal layers, a layer laminated above the plating film and the coating layer cannot be normally formed in a subsequent step. In particular, since each of the plurality of layers is formed of a metal layer, when a failure occurs, the coated layer cannot be separated from the coated material, and there is a problem that a cost loss in terms of the process is large due to a high failure rate and a low recycling rate.

Therefore, there is an urgent need to develop an electromagnetic wave shielding coating method that can realize an electromagnetic wave shielding function on a component layer, can be applied to a very small component, and can not only provide an excellent electromagnetic wave shielding rate but also save production costs and time, and can significantly improve a fraction defective.

Prior art documents

Patent document

Patent document 0001: korean granted patent No. 10-1830059

Patent document 0002: korean patent No. 10-2016-

Disclosure of Invention

Technical problem to be solved

The present invention is directed to solving the problems of the prior art as described above and the technical problems that have been desired to be solved.

The present invention relates to an electromagnetic wave shielding coating method for coating the surface of a component of an electronic device with an electromagnetic wave, which can shield electromagnetic waves on a component-by-component basis, and thus can block electromagnetic waves of a wide bandwidth at low cost.

Technical scheme for solving problems

The invention provides the following technical scheme.

Specifically, the present invention relates to an electromagnetic wave shielding coating method for performing electromagnetic wave shielding coating on a surface of a metal or nonmetal material, including: a pretreatment step, cleaning the surface of the material, and performing dry surface etching before coating; a surface seed crystal replacement molding step of forming a metal seed crystal layer on the pretreated surface; a first gold plating step of performing electroless gold plating on the surface of the seed layer using a first metal to realize a basic shielding function; and a second gold plating step of performing electroless gold plating on the surface of the first metal gold plating layer by using a second metal to realize a final shielding function, wherein the first metal is copper and the second metal is tungsten.

The present invention relates to an electromagnetic wave shielding coating method in which the thickness of the first gold-plating layer formed by the above-described first gold-plating step is 0.05 μm to 5 μm.

The present invention relates to an electromagnetic wave shielding coating method in which the thickness of the second gold-plating layer formed by the above-described second gold-plating step is 1 μm to 10 μm.

Also, the present invention relates to an electromagnetic wave shielding coating method in which the thickness of the seed layer may be 0.05 to 5 μm, and specifically, in the surface seed substitution molding step, the metal contained in the seed layer is palladium (Pd), and electroless gold plating is performed by immersing the surface of the material in a palladium sulfate solution of 5 to 20g/L having a pH of 7 to 9 and a temperature of 30 to 80 ℃ for 1 to 10 minutes.

In another aspect, the present invention relates to an electromagnetic wave shielding coating method in which, in the surface seed crystal substitution molding step, when the metal contained in the seed crystal is nickel (Ni) and iron (Fe), the temperature is 150 to 250 ℃ and the degree of vacuum is 10^-5mmHg to 10^-3Performing metal plasma on the surface of the material under mmHg for 1-15 minAnd (4) sub-sputtering coating.

The present invention also relates to an electromagnetic wave shielding coating method in which electroless gold plating is performed by immersing the surface of the material forming the seed layer in a copper chloride solution of 50g/L to 100g/L having a pH of 8 to 10 and a temperature of 20 ℃ to 40 ℃ for 1 minute to 10 minutes in the above-described first gold plating step.

The present invention relates to an electromagnetic wave shielding coating method, wherein in the second gold plating step, 20g/L to 60g/L ammonium tungstate hydrate ((NH) having pH of 6 to 8 and temperature of 70 ℃ to 80 ℃ is coated₄)₁₀(H₂W₁₂O₄₂)·4H₂O) solution-dipping the surface of the material forming the first gold-plating layer for 10 to 50 minutes to perform electroless gold-plating.

In particular, the present invention relates to an electromagnetic wave shielding coating method in which the metal or nonmetal material is selected from the group consisting of carbon fiber and Epoxy Mold Compound (EMC) used in a semiconductor chip packaging process, and more particularly, the metal or nonmetal material is selected from one of components constituting wearable devices, smart cars, smart phones, communication devices, and notebook computers.

The present invention relates to an electromagnetic wave shielding coating method in which, when the metal contained in the seed layer is palladium, the metal or nonmetal material is carbon fiber constituting a wearable device or an epoxy molding compound in a semiconductor chip packaging process.

In another aspect, the present invention provides an electromagnetic wave shielding coating method in which, when the metal included in the seed layer is nickel or iron, the metal or nonmetal material is one of members constituting a smart car.

Advantageous effects of the invention

As described above, the electromagnetic wave shielding method of the present invention can form a fine coating layer on a component such as a semiconductor chip of an electronic device, and can form a coating layer having a uniform thickness on a front surface of the component of the electronic device, thereby having characteristics of excellent electromagnetic wave shielding performance.

In particular, since the coating layer has excellent adhesion to the surface of the material to be coated, the gold-plated layer does not separate from the surface of the material even under high-temperature conditions with moisture, the coating layer has a long life, and the coating layer has excellent adhesion.

In particular, the coating material and the coating layer are closely attached to each other on the front surface so that no space or defect is generated, and even if the coating layer is exposed to moisture or heat, the close state is maintained without deformation, which is an advantage that the coating maintaining force is extremely excellent.

Compared with the prior art using rare and precious metals or utilizing the outer shell of the electronic equipment, the time for forming the gold plating layer is obviously reduced by using low-price metal, thereby having the advantage of increasing the production efficiency.

As electromagnetic waves can be blocked in units of parts, an effective electromagnetic wave blocking function can be secured in a subminiature part or a wearable device, and the electromagnetic wave blocking device can be directly applied to a member of an intelligent automobile which is highly dangerous due to erroneous operation, and can be applied to electronic devices which are becoming smaller and lighter in various ways.

Drawings

Fig. 1 is a process flow chart of the electromagnetic wave shield coating method of the present invention.

Fig. 2 is a vertical cross-sectional view of an electromagnetic wave shielding layer formed by the electromagnetic wave shielding coating method of the present invention.

Fig. 3 is photographs of the form before and after the epoxy mold compound and the electromagnetic wave shielding coating layer are formed on the semiconductor chip.

Detailed Description

The following detailed description is provided for each structure, but this is only an exemplary description, and the scope of the present invention is not limited thereto.

As described above, in the present invention, a reducing agent is added to form a gold-plated layer on the surface of a metallic or non-metallic material by immersing the material to be coated in a solution containing metal ions in a dissolved state so that the metallic gold-plated layer can be formed on the surface.

The electromagnetic wave shielding coating method based on the electroless gold plating method of the present inventionThe reducing agent may be sodium hypophosphite (NaH)₂PO₂) A boron hydride compound or a hydrazine compound.

Specifically, the boron hydride compound is not limited in its range of use as long as it is a boron hydride compound having reducing property, and for example, sodium borohydride (NaBH)₄) Boron dimethylamine ((CH)₃)₂HNBH₃) Boron diethylamine ((CH)₃CH₂)₂HNBH₃) The hydrazine compound is not limited in its scope of use as long as it is a hydrazine compound having reducing properties, and examples thereof include hydrazine (NH)₂NH₂) Hydrazine sulfate (NH)₂NH₂·H₂SO₄) Hydrazine hydrochloride (NH)₂NH₂2HCl), and the like.

In the electromagnetic wave shielding coating method of the present invention, the material to be coated may be a metal or a nonmetal, and specifically, the material is not limited to use as long as it is suitable for electroless gold plating. For example, the resin composition may be one or more selected from the group consisting of carbon fiber and Epoxy Mold Compound (Epoxy Mold Compound) used in a semiconductor chip packaging process.

The electromagnetic wave shielding coating method of the present invention is applicable to electronic devices, is intended to block unnecessary electromagnetic waves emitted from electronic devices, and is applicable to all members of electronic devices. In particular, the electromagnetic wave shielding coating method of the present invention is not limited to a coating material of a metal material, but is applicable to a coating method of a plastic, a silicon wafer, or a polymer mold, and is advantageous in that it is applicable to a member of an electronic device having a fine structure. Specifically, it may be one selected from components constituting a wearable device, a smart car, a smartphone, a communication device, and a notebook computer, and various applications may be made within a range in which the corresponding electronic device does not hinder the operation.

According to the electromagnetic wave shielding coating method of the present invention, unlike a conventional method of producing an electromagnetic wave shielding effect using a case surrounding an electronic component, unnecessary space waste in the electronic device can be reduced by forming a coating layer on the surface of the electronic device component, and the electronic device can be applied to more fields of technology by reducing the size and weight of the electronic device.

In the electromagnetic wave blocking coating method of the present invention, the pretreatment step of cleaning the surface of a material and performing dry surface etching before coating is intended to remove contaminants such as oxides, hydroxides, metal salts, and oils and fats attached to the surface of a material to be coated.

First, in order to remove contaminants, the surface is cleaned by removing the contaminants physically attached to the surface by a vacuum cleaner or a dry etching process, and then, depending on the type of contaminants, the surface of the material is degreased by using an alkali, organic solvent, emulsion, or acid solution. The degreasing is performed by appropriately selecting and using the contaminants according to the kind of the contaminants so that the surface of the material is not damaged.

Before the gold-plated layer is formed, a metal seed (seed) layer is formed on the surface of the material where the pretreatment step is finished, so as to further improve the adhesion between the gold-plated layer and the surface of the material.

The metal constituting the seed layer may be one or more selected from the group consisting of palladium (Pd), nickel (Ni), and iron (Fe), and the type of the metal constituting the seed layer may be selected according to the type of the material and the thickness of the gold plating layer.

The surface seed crystal replacement molding step may be 5g/L to 20g/L of palladium sulfate (PdSO) at pH 7 to 9 and at a temperature satisfying 30 ℃ to 80 ℃ in the case where the metal contained in the seed crystal layer is palladium₄) The surface of the solution-impregnated material is dipped for 1 to 10 minutes to perform the process of electroless gold plating.

Preferably, the temperature of the above electroless gold plating solution may be 40 ℃ to 70 ℃, more preferably 50 ℃ to 60 ℃.

When the coating is performed at a temperature higher than the above temperature range, a coating layer having a uniform thickness or a coating layer having a partially raised thickness may not be formed on the surface of the coated material, and when the coating is performed at a temperature lower than the above temperature range, a coating layer may not be formed on the front surface of the coated material.

On the other hand, in the surface seed crystal replacement molding step, in the case where the metal contained in the seed crystal layer is nickel or iron, the temperature is 150 to 250 ℃ and the degree of vacuum is 10^-5mmHg to 10^-3And performing metal plasma sputtering coating on the surface of the material for 1 to 15 minutes under the condition of mmHg.

Preferably, the above temperature conditions may be 170 ℃ to 225 ℃, most preferably 180 ℃ to 200 ℃.

If the temperature is higher than the above temperature, the density of the seed layer decreases, and the adhesion between the gold-plated layer and the material deteriorates, whereas if the temperature is lower than the above temperature, the time for forming the seed layer increases.

The thickness of the seed layer may be 0.05 μm to 5 μm, preferably 0.12 μm to 3 μm, and most preferably 0.2 μm to 1 μm.

The seed layer functions to suppress reduction of unnecessary metal ions in a solution for performing electroless gold plating after a pretreatment step is performed on the surface of a metal or non-metal material, and to generate reduction of metal ions only on the surface on which the seed layer is formed, to form a gold-plated layer.

After the seed layer is formed, an electromagnetic wave shielding coating layer is formed by a first gold plating step and a second gold plating step.

The thickness of the first gold-plating layer formed by the above-described first gold-plating step may be 0.05 μm to 5 μm, preferably 0.08 μm to 3 μm, and most preferably 0.1 μm to 1 μm.

The thickness of the second gold-plating layer formed by the above-described second gold-plating step may be 1 μm to 10 μm, preferably 1.5 μm to 7 μm, and most preferably 2 μm to 5 μm.

By forming the first gold-plate layer and the second gold-plate layer with the predetermined thicknesses as described above, electromagnetic waves of a wide bandwidth can be blocked, and a high electromagnetic wave blocking effect is obtained. In addition, when the thickness is smaller than the above thickness, the first gold-plate layer having a uniform thickness cannot be formed, and when the second gold-plate layer is formed, the gold-plate layer having a uniform thickness cannot be formed.

In particular, when the thickness is smaller than the above thickness, there are problems that the electromagnetic wave shielding effect is insufficient, and electromagnetic waves of low frequencies cannot be blocked. If the thickness is larger than the above thickness, it takes more time to form the desired thickness, which leads to a decrease in process efficiency, and although a sufficient electromagnetic wave blocking effect can be obtained within the above thickness range, the formed layer is excessively thick, and the gold plating layer is formed within the above thickness range, which is most preferable in terms of process efficiency, manufacturing cost, and electromagnetic wave shielding effect.

The first gold plating step may be a step of performing electroless gold plating by immersing the surface of the material forming the seed layer in a copper chloride solution of 50g/L to 100g/L having a pH of 8 to 10 and a temperature of 20 ℃ to 40 ℃ for 1 minute to 10 minutes.

Preferably, the pH may be 8.5 to 9.5, performed at a temperature of 25 ℃ to 35 ℃. The kind of the compound is not particularly limited as long as it contains copper ions, and preferably, a solution in which copper chloride is dissolved in water may be used.

In the case where the above conditions are satisfied, the thickness of the first gold-plating layer can be obtained at a level of 0.05 μm to 5 μm within an immersion time of 10 minutes, and if it is performed at a higher temperature, there is a problem that the surface of the gold-plating layer is not strong and a porous layer that can be visually confirmed is formed, and if it is performed at a temperature lower than the above range, the gold-plating layer can be formed at the above thickness only if the immersion time is longer. In particular, if the coating material is immersed in the aqueous solution for 10 minutes or more in the first gold plating step, an uneven or uneven layer is formed on the surface of the first gold plating layer, and therefore, an uneven outer surface that can be confirmed in the final product is formed even after the second gold plating layer is formed, and it is important to form the first gold plating layer by immersion for 10 minutes or less under the above-described conditions.

The above-mentioned second gold plating step may be a step of performing electroless gold plating by dipping the surface of the material forming the first gold plating layer in a 20g/L to 60g/L ammonium tungstate hydrate solution having a pH of 6 to 8 and a temperature satisfying 70 ℃ to 80 ℃ for 10 minutes to 50 minutes.

Preferably, the pH may be 6.8 to 7.8, performed at a temperature of 72 ℃ to 78 ℃. The kind of the compound is not particularly limited as long as it contains tungsten ions, and preferably, ammonium tungstate hydrate may be used.

In particular, in the second gold plating step, if the plating is performed at a temperature higher than the above-described condition, bubbles are formed on the surface to be coated to form an uneven coating layer, and if the plating is performed at a temperature lower than the above-described condition, a uniform thickness cannot be formed on the front surface of the material to be coated, and there is a possibility that a large inclined surface is formed or a thick coating layer is formed on a part of the front surface. In particular, in the second gold plating step, if it is performed under a temperature condition higher than the above temperature, the vertical section of the entire coating layer is formed into a shape having a large inclination, which leads to product failure.

The electromagnetic wave shielding coating method according to the present invention has an advantage that a coating layer can be formed on a metal or nonmetal material, and particularly, has an advantage that it can be applied to a carbon fiber, an epoxy molding compound in a semiconductor chip packaging process, and the like.

Specifically, in order to form a coating layer on the surface of a member constituting a wearable device, a smart car, a smart phone, a communication device, or a notebook computer, a seed layer including palladium is formed on an epoxy molding compound in a process of packaging a carbon fiber or a semiconductor chip constituting the wearable device, which is a metal or nonmetal material, and then a first gold-plating layer and a second gold-plating layer are sequentially formed, thereby forming an electromagnetic wave shielding coating layer.

On the other hand, for the members constituting the smart car, after forming a seed layer including nickel and iron, the first gold-plate layer and the second gold-plate layer are sequentially formed, so that the electromagnetic wave shielding coating layer can be formed.

The present invention will be described in more detail with reference to the accompanying drawings, and fig. 1 is a process flow chart of an electromagnetic wave shield coating method of the present invention, including: a pretreatment step S100 of cleaning the surface of the material and performing dry surface etching before coating; and a surface seed replacement molding step S300 of forming a metal seed layer on the pretreated surface. The electromagnetic wave shielding coating method of the present invention described above differs in the method of forming the seed layer depending on the material of the coating material, and therefore, the step S200 of determining the material of the coating material can be added before the surface seed substitution molding step. The seed layer S300 may be formed by electroless gold plating in the case of coating a carbon fiber or a semiconductor chip, and the seed layer S300' may be formed by sputtering in the case of coating a chip for a smart car. After the seed layer is formed, an electromagnetic wave shielding coating layer conforming to the characteristics and use of the coated material may be formed by sequentially performing the first gold plating step S400 and the second gold plating step S500.

Fig. 2 is a vertical cross-sectional view of an electromagnetic wave shielding layer formed by the electromagnetic wave shielding coating method of the present invention, and shows a structure of a coating layer in which a seed layer 20, a first gold-plate layer 30, and a second gold-plate layer 40 are sequentially stacked on a surface of a coating material 10.

The present invention will be described in more detail below with reference to examples, but the present invention is not limited thereto.

Preparation example