阅读说明：本技术 半导体结构及其制造方法 (Semiconductor structure and manufacturing method thereof ) 是由 马瑞吉 杨国裕 于 2018-06-28 设计创作，主要内容包括：本发明公开一种半导体结构及其制造方法,该半导体结构包括基底、互补式金属氧化物半导体元件与双极结晶体管。互补式金属氧化物半导体元件包括设置在基底上的N型金属氧化物半导体晶体管与P型金属氧化物半导体晶体管。双极结晶体管包括集极、基极与射极。集极设置在基底中。基极设置在基底上。射极设置在基极上。NMOS晶体管的通道的顶面、PMOS晶体管的通道的顶面与双极结晶体管的集极的顶面等高。上述半导体结构可具有较佳的整体效能。(The invention discloses a semiconductor structure and a manufacturing method thereof. The CMOS device includes an NMOS transistor and a PMOS transistor disposed on a substrate. The bipolar junction transistor includes a collector, a base, and an emitter. The collector is disposed in the substrate. The base is disposed on the substrate. The emitter is disposed on the base. The top surfaces of the channels of the NMOS transistor and the PMOS transistor are at the same height as the top surface of the collector of the bipolar junction transistor. The semiconductor structure has better overall efficiency.)

1. A semiconductor structure, comprising:

a substrate;

the CMOS component comprises an N-type metal oxide semiconductor transistor and a P-type metal oxide semiconductor transistor which are arranged on the substrate; and

a bipolar junction transistor comprising:

a collector disposed in the substrate;

a base electrode disposed on the substrate; and

an emitter disposed on the base, wherein

The top surfaces of the channels of the N-type metal oxide semiconductor transistor and the P-type metal oxide semiconductor transistor are as high as the top surface of the collector of the bipolar junction transistor.

2. The semiconductor structure of claim 1, wherein the substrate comprises an insulating layer and a semiconductor layer on the insulating layer, and the collector is disposed in the semiconductor layer.

3. The semiconductor structure of claim 1, wherein the bipolar junction transistor comprises a heterojunction bipolar transistor.

4. The semiconductor structure of claim 1, wherein the collector and the emitter have a first conductivity type and the base has a second conductivity type.

5. The semiconductor structure of claim 4, wherein the collector comprises:

a heavily doped region in the substrate; and

and the lightly doped region is positioned in the substrate and is positioned between the heavily doped region and the base electrode.

6. The semiconductor structure of claim 4, further comprising:

the first doped region and the second doped region are positioned in the base electrode at two sides of the emitter and have the second conduction type.

7. The semiconductor structure of claim 1, further comprising:

a protective layer between the base and the emitter and having an opening, wherein the emitter passes through the opening and is connected to the base.

8. The semiconductor structure of claim 1, further comprising:

and a spacer disposed on a sidewall of the emitter.

9. The semiconductor structure of claim 1, further comprising:

a high resistivity material layer disposed over the CMOS element and the bipolar junction transistor.

10. The semiconductor structure of claim 9, wherein the high resistivity material layer has a resistivity greater than 4000 ohm-cm.

11. The semiconductor structure of claim 9, wherein the material of the layer of high resistivity material comprises high resistivity silicon, glass, quartz, or a polymer material.

12. A method of fabricating a semiconductor structure, comprising:

providing a substrate;

forming a complementary metal oxide semiconductor element on the substrate, wherein the complementary metal oxide semiconductor element comprises an N-type metal oxide semiconductor transistor and a P-type metal oxide semiconductor transistor which are arranged on the substrate; and

forming a bipolar junction transistor on the substrate, wherein the bipolar junction transistor comprises:

a collector disposed in the substrate;

a base electrode disposed on the substrate; and

an emitter disposed on the base, wherein

The top surfaces of the channels of the N-type metal oxide semiconductor transistor and the P-type metal oxide semiconductor transistor are as high as the top surface of the collector of the bipolar junction transistor.

13. The method of claim 12, wherein the bipolar junction transistor comprises a heterojunction bipolar transistor.

14. The method as claimed in claim 12, wherein the collector and the emitter have a first conductivity type, and the base has a second conductivity type.

15. The method of claim 14, wherein the step of forming the collector comprises:

forming a heavily doped region in the substrate; and

a lightly doped region is formed in the substrate between the heavily doped region and the base.

16. The method of fabricating a semiconductor structure according to claim 14, further comprising:

first and second doped regions of the second conductivity type are formed in the base on both sides of the emitter.

17. The method of manufacturing a semiconductor structure according to claim 12, further comprising:

a protective layer having an opening is formed between the base and the emitter, wherein the emitter passes through the opening and is connected to the base.

18. The method of manufacturing a semiconductor structure according to claim 12, further comprising:

spacers are formed on sidewalls of the emitter.

19. The method of manufacturing a semiconductor structure according to claim 12, further comprising:

a layer of high resistivity material is formed over the complementary metal oxide semiconductor element and the bipolar junction transistor.

20. The method of claim 19, wherein the substrate comprises a semiconductor-on-insulator substrate, and wherein the semiconductor-on-insulator substrate comprises:

a base layer;

an insulating layer; disposed on the base layer; and

a semiconductor layer disposed on the insulating layer, wherein

The collector is disposed in the semiconductor layer, and

after forming the layer of high resistivity material, the base layer is removed.

Technical Field

The present invention relates generally to semiconductor structures and methods of fabricating the same, and more particularly to a semiconductor structure with improved overall performance.

Background

In some applications of semiconductor structures, the semiconductor structures may integrate various semiconductor devices. For example, a radio frequency front-end module (RF FEM) may integrate a radio frequency switch (RF switch), a low-noise amplifier (LNA), and a Power Amplifier (PA). Therefore, how to effectively enhance the overall performance of the semiconductor structure is a goal of active efforts at present.

Disclosure of Invention

The present invention is directed to a semiconductor structure with better overall performance.

To achieve the above objects, the present invention provides a semiconductor structure, which includes a substrate, a Complementary Metal Oxide Semiconductor (CMOS) device, and a Bipolar Junction Transistor (BJT). The complementary metal oxide semiconductor element comprises an N-type metal oxide semiconductor (NMOS) transistor and a P-type metal oxide semiconductor (PMOS) transistor which are arranged on a substrate. The bipolar junction transistor includes a collector (collector), a base (base), and an emitter (emitter). The collector is disposed in the substrate. The base is disposed on the substrate. The emitter is disposed on the base. The top surfaces of the channels of the NMOS transistor and the PMOS transistor are at the same height as the top surface of the collector of the bipolar junction transistor.

In the semiconductor structure, the substrate may include an insulating layer and a semiconductor layer on the insulating layer. The collector may be disposed in the semiconductor layer.

In the semiconductor structure, the bipolar transistor is, for example, a Heterojunction Bipolar Transistor (HBT), according to an embodiment of the present invention.

In the semiconductor structure, the collector and the emitter may have a first conductivity type, and the base may have a second conductivity type.

In the semiconductor structure, the collector may include a heavily doped region and a lightly doped region according to an embodiment of the invention. The heavily doped region is located in the substrate. The lightly doped region is located in the substrate and located between the heavily doped region and the base.

According to an embodiment of the present invention, the semiconductor structure may further include a first doped region and a second doped region. The first doped region and the second doped region are located in the base on both sides of the emitter and have a second conductivity type.

According to an embodiment of the present invention, the semiconductor structure may further include a protection layer. The protective layer is located between the base and the emitter and has an opening. The emitter passes through the opening and is connected to the base.

According to an embodiment of the present invention, the semiconductor structure may further include a spacer. The spacer is disposed on the sidewall of the emitter.

According to an embodiment of the invention, a high resistivity material layer (high resistivity material layer) may be further included in the semiconductor structure. A layer of high resistivity material is disposed over the CMOS elements and bipolar junction transistors.

In the semiconductor structure, the resistivity of the high-resistivity material layer is, for example, greater than 4000 ohm-cm (Ω -cm), according to an embodiment of the present invention.

In the semiconductor structure, the material of the high resistivity material layer is, for example, high resistivity silicon, glass, quartz or a polymer material.

The invention provides a manufacturing method of a semiconductor structure, which comprises the following steps. A substrate is provided. CMOS devices are formed on the substrate. The CMOS includes NMOS and PMOS transistors disposed on a substrate. A bipolar junction transistor is formed on the substrate. The bipolar junction transistor includes a collector, a base, and an emitter. The collector is disposed in the substrate. The base is disposed on the substrate. The emitter is disposed on the base. The top surfaces of the channels of the NMOS transistor and the PMOS transistor are at the same height as the top surface of the collector of the bipolar junction transistor.

In the method for fabricating the semiconductor structure according to an embodiment of the present invention, the bipolar junction transistor is, for example, a Heterojunction Bipolar Transistor (HBT).

According to an embodiment of the present invention, in the method for manufacturing the semiconductor structure, the collector and the emitter may have a first conductivity type, and the base may have a second conductivity type.

In the method for manufacturing a semiconductor structure according to an embodiment of the present invention, the method for forming the collector may include the following steps. A heavily doped region is formed in the substrate. A lightly doped region is formed in the substrate between the heavily doped region and the base.

According to an embodiment of the present invention, in the method for manufacturing the semiconductor structure, a first doped region and a second doped region having a second conductivity type may be formed in the base on both sides of the emitter.

According to an embodiment of the present invention, the method for manufacturing a semiconductor structure further includes forming a protection layer having an opening between the base and the emitter. The emitter passes through the opening and is connected to the base.

According to an embodiment of the present invention, the method for manufacturing a semiconductor structure further includes forming a spacer on a sidewall of the emitter.

According to an embodiment of the present invention, the method for fabricating a semiconductor structure may further include forming a high resistivity material layer above the CMOS device and the bipolar junction transistor.

According to an embodiment of the present invention, in the method for manufacturing the semiconductor structure, the substrate is, for example, a Semiconductor On Insulator (SOI) substrate. The SOI substrate may include a base layer, an insulating layer and a semiconductor layer. An insulating layer is disposed on the base layer. The semiconductor layer is disposed on the insulating layer. The collector may be disposed in the semiconductor layer. After forming the layer of high resistivity material, the base layer may be removed.

Based on the above, in the semiconductor structure and the manufacturing method thereof provided by the present invention, since the top surfaces of the channel of the NMOS transistor, the channel of the PMOS transistor, and the collector of the bipolar junction transistor are equal in height, the CMOS device and the bipolar junction transistor can be effectively integrated, thereby improving the overall performance of the semiconductor structure.

In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.

Drawings

Fig. 1A to 1M are cross-sectional views illustrating a manufacturing process of a semiconductor structure according to an embodiment of the invention.

Description of the symbols

100: substrate

100 a: base layer

100 b: insulating layer

100 c: semiconductor layer

102. 106: conductive layer

104. 108, 178, 188: dielectric layer

110. 112, 138: spacer wall

114. 116, 118, 120, 144, 146: doped region

122. 124, 134: protective layer

126: patterned photoresist layer

128: collector electrode

128 a: heavily doped region

128 b: lightly doped region

130: base layer

130 a: base electrode

132: opening of the container

136: emitter layer

136 a: emitter electrode

140. 142: n-type doped region

148. 150: p-type doped region

152. 154, 156, 158, 160, 162, 164, 166, 168, 182, 184, 186: metal silicide layer

170: bipolar junction transistor

172: CMOS device

174: NMOS transistor

176: PMOS transistor

180: high resistivity material layer

190: external circuit

C1, C2: channel

IS 1-IS 9: internal connection structure

ST: isolation structure

Detailed Description

Fig. 1A to 1M are cross-sectional views illustrating a manufacturing process of a semiconductor structure according to an embodiment of the invention.

Referring to fig. 1A, a substrate 100 is provided. The substrate 100 has a first side S1 and a second side S2 opposite to each other. The first side S1 and the second side S2 may be one and the other of the front side and the back side of the substrate 100. In the embodiment, the first side S1 is the front side of the substrate 100, and the second side S2 is the back side of the substrate 100, but the invention is not limited thereto.

In the present embodiment, the substrate 100 is an SOI substrate, but the invention is not limited thereto. The SOI substrate may be a fully depleted SOI (FD SOI) substrate or a partially depleted SOI (PD SOI) substrate. The substrate 100 may include a substrate layer 100a, an insulating layer 100b and a semiconductor layer 100 c. The material of the substrate layer 100a is, for example, a semiconductor material such as silicon. The insulating layer 100b is disposed on the base layer 100 a. The material of the insulating layer 100b is, for example, silicon oxide. The semiconductor layer 100c is disposed on the insulating layer 100 b. The material of the semiconductor layer 106 is, for example, silicon. In addition, an isolation structure ST may be formed in the substrate 100. The isolation structure ST is, for example, a shallow trench isolation Structure (STI). The material of the isolation structure ST is, for example, silicon oxide.

A conductive layer 102, a dielectric layer 104, a conductive layer 106, and a dielectric layer 108 may be formed on the first surface S1 of the substrate 100. The conductive layer 102 and the conductive layer 106 are disposed on the substrate 100, respectively. In the present embodiment, the conductive layer 102 and the conductive layer 106 may be disposed on the semiconductor layer 100c, respectively. The conductive layers 102 and 106 can be gates, respectively. The conductive layer 102 and the conductive layer 106 are made of doped polysilicon, for example. The dielectric layer 104 is disposed between the conductor layer 102 and the substrate 100. The dielectric layer 108 is disposed between the conductor layer 106 and the substrate 100. The dielectric layer 104 and the dielectric layer 108 may be gate dielectric layers, respectively. The dielectric layer 104 and the dielectric layer 108 are made of silicon oxide, respectively.

In addition, a gapped wall 110 can be formed on a sidewall of the conductor layer 102, and a gapped wall 112 can be formed on a sidewall of the conductor layer 106. The spacers 110 and 112 may be a single-layer structure or a multi-layer structure, respectively. The material of the spacers 110 and 112 is, for example, silicon nitride, silicon oxide, or a combination thereof.

In addition, a doped region 114, a doped region 116, a doped region 118 and a doped region 120 may be formed in the substrate 100. In the present embodiment, the doped regions 114, 116, 118 and 120 may be disposed in the semiconductor layer 100c, respectively. The doped regions 114, 116, 118 and 120 can be used as Lightly Doped Drains (LDDs), respectively. The doped regions 114 and 116 are respectively illustrated as having N-type conductivity, and the doped regions 118 and 120 are respectively illustrated as having P-type conductivity, but the invention is not limited thereto.

Referring to fig. 1B, a protection layer 122 may be formed on the substrate 100. The material of the protective layer 122 is, for example, silicon oxide. The protective layer 122 is formed by, for example, Chemical Vapor Deposition (CVD).

Next, a protection layer 124 may be formed on the protection layer 122. The material of the protection layer 124 is, for example, polysilicon. The protective layer 124 is formed by, for example, chemical vapor deposition.

A patterned photoresist layer 126 may then be formed on the protective layer 124. The patterned photoresist layer 126 exposes a portion of the protective layer 124. The patterned photoresist layer 126 is formed, for example, by a photolithographic fabrication process.

Next, the protective layer 124 exposed by the patterned photoresist layer 126 is removed. The protective layer 124 is removed by, for example, wet etching or dry etching.

Thereafter, a collector 128 is formed in the substrate 100 in the area exposed by the patterned photoresist layer 126. In the present embodiment, the collector 128 may be formed in the semiconductor layer 100 c. The collector 128 is formed by, for example, performing an ion implantation process on the semiconductor layer 100c using the patterned photoresist layer 126 as a mask.

The method of forming the collector 128 may include the following steps. With the patterned photoresist layer 126 as a mask, a heavily doped region 128a is formed in the substrate 100. Next, a lightly doped region 128b is formed in the substrate 100 above the heavily doped region 128a using the patterned photoresist layer 126 as a mask. The collector 128 may include a heavily doped region 128a and a lightly doped region 128 b. The lightly doped region 128b is closer to the first side S1 of the substrate 100 than the heavily doped region 128 a. In the present embodiment, although the heavily doped region 128a is formed first and then the lightly doped region 128b is formed, the invention is not limited thereto. In another embodiment, the lightly doped region 128b may be formed first, and then the heavily doped region 128a may be formed.

The collector 128 may have a first conductivity type. Hereinafter, the first conductivity type and the second conductivity type may be one and the other of an N-type conductivity and a P-type conductivity, respectively. In the present embodiment, the first conductive type is an N-type conductive type, and the second conductive type is a P-type conductive type, but the invention is not limited thereto.

Referring to fig. 1C, the patterned photoresist layer 126 is removed. The patterned photoresist layer 126 is removed by, for example, a dry strip method or a wet strip method.

Then, the passivation layer 122 exposed by the passivation layer 124 is removed to expose the substrate 100. The protective layer 122 is removed by, for example, wet etching. The etchant used in the wet etching method is, for example, diluted hydrofluoric acid.

Then, a base layer 130 may be formed on the protective layer 124 and the substrate 100. The base layer 130 may have a second conductivity type (e.g., P-type). The material of the base layer 130 can be a doped semiconductor material, such as a doped group III-V semiconductor material. In the present embodiment, the material of the base layer 130 is doped SiGe as an example, but the invention is not limited thereto. The base layer 130 may be formed by in-situ doping (epitaxial growth).

Referring to fig. 1D, a protection layer 134 having an opening 132 may be formed on the base layer 130. Opening 132 exposes a portion of base layer 130 above collector 128. The protective layer 134 may have a single-layer structure or a multi-layer structure. The material of the protection layer 134 is, for example, silicon oxide, silicon nitride, or a combination thereof. The protection layer 134 is formed by, for example, forming a protection material layer (not shown) by a chemical vapor deposition method, and then patterning the protection material layer by a photolithography process and an etching process.

Emitter layer 136 can then be formed on protective layer 134 and base layer 130. Emitter layer 136 passes through opening 132 and connects to base layer 130. The emitter layer 136 may have a first conductivity type (e.g., N-type). The material of the emitter layer 136 is, for example, a doped semiconductor material. In the present embodiment, the material of the emitter layer 136 is doped polysilicon, but the invention is not limited thereto. The doped polysilicon is formed by in-situ Chemical Vapor Deposition (CVD) or by forming undoped polysilicon and then doping the undoped polysilicon.

Referring to fig. 1E, emitter layer 136 may be patterned to form emitter 136 a. The patterning process performed on the emitter layer 136 is, for example, a combined photolithography process and etching process.

Spacers 138 can then be formed on the sidewalls of emitter 136 a. The spacer 138 may have a single-layer structure or a multi-layer structure. The material of the spacer 138 is, for example, silicon nitride, silicon oxide, or a combination thereof.

Then, the passivation layer 134 not covered by the emitter 136a and the spacer 138 can be removed. The passivation 134 not covered by the emitters 136a and the spacers 138 is removed by, for example, dry etching or wet etching.

Referring to fig. 1F, a patterning process may be performed on the base layer 130 to form a base 130 a. The patterning process performed on the base layer 130 is, for example, a combined photolithography process and etching process.

Next, the protection layer 124 not covered by the base 130a may be removed. The protective layer 124 not covered by the base 130a is removed by, for example, wet etching or dry etching.

Referring to fig. 1G, an N-type doped region 140 and an N-type doped region 142 may be formed in the substrate 100 on both sides of the conductive layer 102. In the present embodiment, the N-type doped regions 140 and 142 can be formed in the semiconductor layer 100c on both sides of the conductive layer 102. The doping concentrations of the N-type doped regions 140 and 142 may be greater than the doping concentrations of the doped regions 114 and 116. The N-type doped regions 140 and 142 may be formed by performing an ion implantation process using an ion implantation mask.

Next, doped regions 144 and 146 of a second conductivity type (e.g., P-type) are formed in base 130a on both sides of emitter 136 a. The dopant concentration of the doped regions 144 and 146 may be greater than the dopant concentration of the base 130 a. In addition, a P-type doped region 148 and a P-type doped region 150 may be formed in the substrate 100 on both sides of the conductive layer 106. In the present embodiment, the P-type doped regions 148 and 150 can be formed in the semiconductor layer 100c on both sides of the conductive layer 106. The doping concentrations of the P-type doped regions 148 and 150 may be greater than the doping concentrations of the doped regions 118 and 120.

In the embodiment, since the doped regions 144 and 146 are of P-type conductivity, the doped regions 144 and 146 and the P-type doped regions 148 and 150 can be formed by performing an ion implantation process using the same ion implantation mask, but the invention is not limited thereto. In another embodiment, the doped regions 144 and 146 and the P-type doped regions 148 and 150 can be formed separately.

In addition, one skilled in the art can adjust the formation sequence of the N-type doped region 140, the N-type doped region 142, the doped region 144, the doped region 146, the P-type doped region 148 and the P-type doped region 150 according to the manufacturing process requirements, and the invention is not limited to the disclosure of the above embodiments.

Referring to fig. 1H, the protection layer 122 not covered by the P-type doped regions 148 and 150 can be removed. The protection layer 122 not covered by the P-type doped regions 148 and 150 is removed by, for example, wet etching. The etchant used in the wet etching method is, for example, diluted hydrofluoric acid.

Next, metal silicide layer 152, metal silicide layer 154, metal silicide layer 156, metal silicide layer 158, metal silicide layer 160, metal silicide layer 162, metal silicide layer 164, metal silicide layer 166, and metal silicide layer 168 may be formed on emitter 136a, doped region 144, doped region 146, conductive layer 102, N-doped region 140, N-doped region 142, conductive layer 106, P-doped region 148, and P-doped region 150, respectively. The material of the metal silicide layers 152, 154, 156, 158, 160, 162, 164, 166 and 168 is, for example, cobalt silicide or nickel silicide. The metal silicide layers 152, 154, 156, 158, 160, 162, 164, 166, 168 are formed, for example, by performing a self-aligned metal silicide process (salicidation process).

In addition, the bipolar junction transistor 170 and the CMOS device 172 can be formed on the first surface S1 of the substrate 100 by the above method, but the method for manufacturing the bipolar junction transistor 170 and the CMOS device 172 is not limited thereto. The semiconductor structure of the present embodiment can be applied to a Radio Frequency Front End Module (RFFEM). When the semiconductor structure of the present embodiment is applied to a radio frequency front end module, the CMOS device 172 may be used to form a radio frequency switch (RF switch), and the bipolar junction transistor 170 may be used to form a Power Amplifier (PA).

The bipolar junction transistor 170 is located on the first side S1 of the substrate 100. Bipolar junction transistor 170 includes collector 128, base 130a, and emitter 136 a. The bipolar junction transistor 170 is, for example, a Heterojunction Bipolar Transistor (HBT). The collector 128 is disposed in the substrate 100. In the present embodiment, the collector 128 may be disposed in the semiconductor layer 100 c. The collector 128 may include a heavily doped region 128a and a lightly doped region 128 b. The heavily doped region 128a is located in the substrate 100. The lightly doped region 128b is located in the substrate 100 and located between the heavily doped region 128a and the base 130 a. The base 130a is disposed on the substrate 100. Emitter 136a is disposed over base 130 a. Emitter 136a passes through opening 132 of passivation layer 134 and is connected to base 130 a. Collector 128 and emitter 136a may have a first conductivity type and base 130a may have a second conductivity type.

The CMOS element 172 is located on the first surface S1 of the substrate 100. The CMOS device 172 includes an NMOS transistor 174 and a PMOS transistor 176 disposed on the substrate 100.

The NMOS transistor 174 may include the conductive layer 102, the dielectric layer 104, the N-type doped region 140, and the N-type doped region 142, and may further include at least one of the doped region 114, the doped region 116, the spacer 110, the metal silicide layer 158, the metal silicide layer 160, and the metal silicide layer 162. A conductor layer 102 is disposed on the substrate 100. The channel C1 of the NMOS transistor 174 may be located in the substrate 100 below the conductive layer 102. The dielectric layer 104 is disposed between the conductor layer 102 and the substrate 100. The N-type doped region 140 and the N-type doped region 142 are disposed in the substrate 100 on both sides of the conductive layer 102. The N-type doped regions 140 and 142 may serve as one and the other of a source and a drain, respectively. In the present embodiment, the N-type doped region 140 is taken as a source, and the N-type doped region 142 is taken as a drain, but the invention is not limited thereto. Doped region 114 is located between N-type doped region 140 and channel C1. Doped region 116 is located between N-type doped region 142 and channel C1. The spacers 110 are disposed on the sidewalls of the conductive layer 102. The metal silicide layer 158, the metal silicide layer 160 and the metal silicide layer 162 are respectively disposed on the conductive layer 102, the N-type doped region 140 and the N-type doped region 142.

The PMOS transistor 176 may include the conductive layer 106, the dielectric layer 108, the P-type doped region 148, and the P-type doped region 150, and may further include at least one of the doped region 118, the doped region 120, the spacer 112, the metal silicide layer 164, the metal silicide layer 166, and the metal silicide layer 168. A conductor layer 106 is disposed on the substrate 100. Channel C2 of PMOS transistor 176 may be located in substrate 100 below conductor layer 106. The dielectric layer 108 is disposed between the conductor layer 106 and the substrate 100. The P-type doped regions 148 and 150 are disposed in the substrate 100 on both sides of the conductive layer 106. The P-doped regions 148 and 150 may serve as one and the other of a source and a drain, respectively. In the present embodiment, the P-type doped region 148 is taken as a source, and the P-type doped region 150 is taken as a drain, but the invention is not limited thereto. Doped region 118 is located between P-type doped region 148 and channel C2. Doped region 120 is located between P-type doped region 150 and channel C2. The spacers 112 are disposed on the sidewalls of the conductive layer 106. The metal silicide layer 164, the metal silicide layer 166, and the metal silicide layer 168 are respectively disposed on the conductive layer 106, the P-type doped region 148, and the P-type doped region 150.

In the present embodiment, the PMOS transistor 176 is located between the NMOS transistor 174 and the bjt 170 for example, but the invention is not limited thereto. One skilled in the art can adjust the arrangement of the bipolar junction transistor 170, the NMOS transistor 174, and the PMOS transistor 176 according to the product requirement.

In addition, the top surface of the channel C1 of the NMOS transistor 174, the top surface of the channel C2 of the PMOS transistor 176, and the top surface of the collector 128 of the bipolar junction transistor 170 are at the same height, so that the CMOS device 172 and the bipolar junction transistor 170 can be effectively integrated, thereby improving the overall performance of the semiconductor structure. In the present embodiment, the top surface of the channel C1 of the NMOS transistor 174, the top surface of the channel C2 of the PMOS transistor 176, and the top surface of the collector 128 of the bipolar junction transistor 170 are located on the first side S1 of the substrate 100, for example.

Referring to fig. 1I, a dielectric layer 178 covering the bipolar junction transistor 170 and the CMOS device 172 may be formed. The dielectric layer 178 may be a multi-layer structure. The material of the dielectric layer 178 is, for example, silicon oxide. The dielectric layer 178 is formed by, for example, chemical vapor deposition.

Next, an interconnect structure IS1 electrically connected to the base 130a IS formed on the first side S1 of the substrate 100. Interconnect structure IS1 may be electrically connected to base 130a through silicide 156 and doped region 146. An interconnect structure IS2 electrically connected to emitter 136a may be formed at the first side S1 of substrate 100. Interconnect structure IS2 may be electrically connected to emitter 136a through metal silicide 152. An interconnect structure IS3 electrically connected to the conductive layer 102 may be formed on the first side S1 of the substrate 100. Interconnect IS3 may be electrically connected to conductive layer 102 through metal silicide 158. An interconnect structure IS4 electrically connected to the N-type doped region 140 may be formed on the first side S1 of the substrate 100. Interconnect IS4 may be electrically connected to N-doped region 140 through silicide 160. An interconnect structure IS5 electrically connected to the conductive layer 106 may be formed on the first side S1 of the substrate 100. Interconnect IS5 may be electrically connected to conductive layer 106 through metal silicide 164. An interconnect structure IS6 electrically connected to the P-type doped region 148 may be formed at the first side S1 of the substrate 100. Interconnect IS6 may be electrically connected to P-doped region 148 through metal silicide 166. Interconnect structures IS1 through IS6 may include contacts, conductive traces, or combinations thereof, respectively. Interconnect structures IS1 through IS6 may be multilevel interconnect structures. The materials of the interconnect structures IS1 to IS6 are, for example, tungsten, copper, aluminum or combinations thereof. Interconnect structures IS1 through IS6 may be formed in dielectric layer 178 using a metal interconnect fabrication process.

Referring to fig. 1J, a high resistivity material layer 180 may be formed over the CMOS device 172 and the bipolar junction transistor 170. The high resistivity material layer 180 may be used to reduce noise (noise) when the semiconductor structure of the present embodiment is applied to an rf front end module. The resistivity of the high-resistivity material layer 180 is, for example, more than 4000 ohm-centimeters (Ω · cm). The material of the high resistivity material layer 180 is, for example, high resistivity silicon, glass, quartz, or a polymer material (e.g., a plastic material). The high resistivity material layer 180 may be formed, for example, by flipping the processed wafer and bonding the semiconductor structure to the high resistivity material layer 180. In the present embodiment, the dielectric layer 178 of the semiconductor structure is bonded to the high resistivity material layer 180, but the invention is not limited thereto.

Referring to fig. 1K, the substrate layer 100a may be removed. The substrate layer 100a is removed by, for example, grinding, wet etching or a combination thereof.

Referring to fig. 1L, a patterning process may be performed on the insulating layer 100b to expose the collector 128, the N-type doped region 142 and the P-type doped region 150. The patterning process performed on the insulating layer 100b is, for example, a combined photolithography process and etching process.

Next, a metal silicide layer 182, a metal silicide layer 184 and a metal silicide layer 186 may be formed on the collector 128, the N-type doped region 142 and the P-type doped region 150 exposed by the insulating layer 100b, respectively. The material of metal silicide layer 182, metal silicide layer 184, and metal silicide layer 186 is, for example, cobalt silicide or nickel silicide. The metal silicide layer 182, the metal silicide layer 184 and the metal silicide layer 186 are formed, for example, by performing a self-aligned metal silicide process.

In addition, the bipolar junction transistor 170 may further include a metal silicide layer 182 disposed on the collector 128 exposed by the insulating layer 100 b. The NMOS transistor 174 may further include a metal silicide layer 184 disposed on the N-type doped region 142 exposed by the insulating layer 100 b. The PMOS transistor 176 may further include a metal silicide layer 186 disposed on the P-type doped region 150 exposed by the insulating layer 100 b.

Referring to fig. 1M, a dielectric layer 188 may be formed covering the insulating layer 100b, the metal silicide layer 182, the metal silicide layer 184, and the metal silicide layer 186. The material of the dielectric layer 188 is, for example, silicon oxide. The dielectric layer 188 is formed by, for example, chemical vapor deposition.

Next, an interconnect structure IS7 electrically connected to the collector 128 IS formed on the second surface S2 of the substrate 100. Interconnect structure IS7 may be electrically connected to collector 128 through metal silicide 182. An interconnect structure IS8 electrically connected to the N-type doped region 142 may be formed at the second side S2 of the substrate 100. Interconnect structure IS8 may be electrically connected to N-doped region 142 through metal silicide 184. An interconnect structure IS9 electrically connected to the P-type doped region 150 may be formed at the second side S2 of the substrate 100. Interconnect IS9 may be electrically connected to P-type doped region 150 through silicide 186. Interconnect structures IS7 through IS9 may include contacts, conductive traces, or combinations thereof, respectively. The interconnect structures IS7 through IS9 may be single-level interconnect structures or multi-level interconnect structures, respectively. The materials of the interconnect structures IS7 to IS9 are, for example, tungsten, copper, aluminum or combinations thereof. Interconnect structure IS7 through IS9 may be formed in dielectric 188 using a metal interconnect fabrication process and may extend above dielectric 188.

In addition, the interconnect structures IS1 through IS6 may also extend to the second side S2 of the substrate 100, respectively. The interconnect structures IS1 through IS9 may be electrically connected to the external circuit 190 on the second side S2 of the substrate 100, respectively. Thus, the external circuit 190 may be electrically connected to the interconnect structures IS1 through IS9 to provide voltages to the corresponding electrodes of the bipolar junction transistor 170 and the CMOS device 172, respectively. The external circuit 190 may be electrically connected to the interconnect structure IS1 to the interconnect structure IS9 by any method known in the art and will not be described herein.

In addition, in the cross-sectional views of fig. 1I to 1M, the interconnect structure shown by the dotted line is not located on the cross-section. In the present embodiment, the number of layers and layout (layout) of the interconnect structures IS1 to IS9 IS not limited to those shown in the drawings, and those skilled in the art can adjust the number of layers and layout of the interconnect structures IS1 to IS9 according to the product requirements.

Based on the above, the interconnect structures IS1 and IS7 are electrically connected to the base 130a and the collector 128, respectively, and the portion of the interconnect structures IS1 and IS7 are located on different sides of the substrate 100. Therefore, the capacitance between the base 130a and the collector 128 of the bipolar junction transistor 170 can be reduced, thereby improving the overall performance of the semiconductor structure.

Furthermore, interconnect structures IS2 and IS7 are electrically connected to emitter 136a and collector 128, respectively, and portions of interconnect structures IS2 and IS7 are located on different sides of substrate 100. Accordingly, the capacitance between the emitter 136a and the collector 128 of the bipolar junction transistor 170 can be reduced to further enhance the overall performance of the semiconductor structure.

In addition, the interconnect structures IS4 and IS8 are electrically connected to the N-doped regions 140 (source) and 142 (drain), respectively, and portions of the interconnect structures IS4 and IS8 are located on different sides of the substrate 100. Therefore, the capacitance between the source and the drain of the NMOS transistor 174 may be reduced to further enhance the overall performance of the semiconductor structure.

On the other hand, the interconnect structures IS6 and IS9 are electrically connected to the P-doped regions 148 (source) and 150 (drain), respectively, and portions of the interconnect structures IS6 and IS9 are located on different sides of the substrate 100. Therefore, the capacitance between the source and the drain of the PMOS transistor 176 may be reduced to further enhance the overall performance of the semiconductor structure.

Referring to fig. 1K, in an embodiment, the semiconductor structure includes a substrate 100, a CMOS device 172, and a bipolar junction transistor 170, and may further include at least one of a doped region 144 and a doped region 146, a protection layer 134, a spacer 138, and a high resistivity material layer 180. The substrate 100 may include an insulating layer 100b and a semiconductor layer 100c on the insulating layer 100 b.

The CMOS device 172 includes an NMOS transistor 174 and a PMOS transistor 176 disposed on the substrate 100. Details of the NMOS transistor 174 and the PMOS transistor 176 can refer to the above embodiments, and are not repeated here.

Bipolar junction transistor 170 includes collector 128, base 130a, and emitter 136 a. The bipolar junction transistor 170 is, for example, a Heterojunction Bipolar Transistor (HBT). The collector 128 is disposed in the substrate 100. In the present embodiment, the collector 128 may be disposed in the semiconductor layer 100 c. The collector 128 may include a heavily doped region 128a and a lightly doped region 128 b. The heavily doped region 128a is located in the substrate 100. The lightly doped region 128b is located in the substrate 100 and located between the heavily doped region 128a and the base 130 a. The base 130a is disposed on the substrate 100. Emitter 136a is disposed over base 130 a. The top surface of channel C1 of NMOS transistor 174 and the top surface of channel C2 of PMOS transistor 176 are at the same height as the top surface of collector 128 of bipolar junction transistor 170. Collector 128 and emitter 136a can have a first conductivity type (e.g., N-type) and base 130a can have a second conductivity type (e.g., P-type). The details of the bipolar junction transistor 170 can be found in the above embodiments, and will not be repeated here.

Doped regions 144 and 146 are in base 130a on either side of emitter 136a and have a second conductivity type (e.g., P-type). Protective layer 134 is located between base 130a and emitter 136a, and has opening 132. Emitter 136a passes through opening 132 and is connected to base 130 a. Spacers 138 are disposed on the sidewalls of emitter 136 a. A high resistivity material layer 180 is disposed over the CMOS device 172 and the bipolar junction transistor 170. The resistivity of the high-resistivity material layer is, for example, more than 4000 ohm-cm (Ω -cm). The material of the high resistivity material layer 180 is, for example, high resistivity silicon, glass, quartz, or a polymer material (e.g., a plastic material).

In addition, the materials, arrangement, forming methods and effects of the components in the semiconductor structure of fig. 1K are described in detail in the above embodiments, and will not be described again.

Based on the above embodiments, in the semiconductor structure and the manufacturing method thereof of fig. 1K, since the top surface of the channel C1 of the NMOS transistor 174, the top surface of the channel C2 of the PMOS transistor 176 and the top surface of the collector 128 of the bipolar junction transistor 170 are equal in height, the CMOS device 172 and the bipolar junction transistor 170 can be effectively integrated, thereby improving the overall performance of the semiconductor structure.

Referring to fig. 1M, in one embodiment, the semiconductor structure includes a substrate 100, a bipolar transistor 170, an interconnect structure IS1 and an interconnect structure IS7, and may further include at least one of a CMOS device 172, an interconnect structure IS2 to an interconnect structure IS6, an interconnect structure IS8, an interconnect structure IS9, doped regions 144 and 146, a passivation layer 134, a spacer 138 and a high resistivity material layer 180. The substrate 100 has a first side S1 and a second side S2 opposite to each other. The substrate 100 may include an insulating layer 100b and a semiconductor layer 100c on the insulating layer 100 b.

The bipolar junction transistor 170 is located on the first side S1 of the substrate 100. Bipolar junction transistor 170 includes collector 128, base 130a, and emitter 136 a. The bipolar junction transistor 170 is, for example, a Heterojunction Bipolar Transistor (HBT). The collector 128 is disposed in the substrate 100. The base 130a is disposed on the substrate 100. In the present embodiment, the collector 128 may be disposed in the semiconductor layer 100 c. The collector 128 may include a heavily doped region 128a and a lightly doped region 128 b. The heavily doped region 128a is located in the substrate 100. The lightly doped region 128b is located in the substrate 100 and located between the heavily doped region 128a and the base 130 a. Emitter 136a is disposed over base 130 a. Collector 128 and emitter 136a can have a first conductivity type (e.g., N-type) and base 130a can have a second conductivity type (e.g., P-type). The details of the bipolar junction transistor 170 can be found in the above embodiments, and will not be repeated here.

The CMOS element 172 is located on the first surface S1 of the substrate 100. The CMOS device 172 may include an NMOS transistor 174 and a PMOS transistor 176. Details of the NMOS transistor 174 and the PMOS transistor 176 can refer to the above embodiments, and are not repeated here. In addition, although the structure of the bipolar junction transistor 170 and the CMOS device 172 is disclosed above in the present embodiment, the invention is not limited thereto.

Interconnect structures IS1 through IS6 are respectively disposed on the first side S1 of the substrate 100 and electrically connected to the base 130a, the emitter 136a, the conductive layer 102, the N-doped region 140, the conductive layer 106 and the P-doped region 148. The interconnect structures IS7 through IS9 are respectively disposed on the second side S2 of the substrate 100 and electrically connected to the collector 128, the N-doped region 142, and the P-doped region 150, respectively. The interconnect structures IS1 through IS6 may also extend to the second side S2 of the substrate 100, respectively. The interconnect structures IS1 through IS9 may be electrically connected to the external circuit 190 on the second side S2 of the substrate 100, respectively.

Doped regions 144 and 146 are in base 130a on either side of emitter 136a and have a second conductivity type (e.g., P-type). Interconnect structure IS1 may be electrically connected to doped region 144 or doped region 146. Protective layer 134 is located between base 130a and emitter 136a, and has opening 132. Emitter 136a passes through opening 132 and is connected to base 130 a. Spacers 138 are disposed on the sidewalls of emitter 136 a. A high resistivity material layer 180 is disposed over the CMOS device 172 and the bipolar junction transistor 170. The resistivity of the high-resistivity material layer is, for example, more than 4000 ohm-cm (Ω -cm). The material of the high resistivity material layer 180 is, for example, high resistivity silicon, glass, quartz, or a polymer material (e.g., a plastic material).

In addition, the materials, arrangement, forming methods and effects of the components in the semiconductor structure of fig. 1M are described in detail in the above embodiments, and will not be described again.

In view of the above embodiments, in the semiconductor structure and the method of fabricating the same of fig. 1M, the interconnect structures IS1 and IS7 are electrically connected to the base 130a and the collector 128, respectively, and the portion of the interconnect structures IS1 and IS7 are located on different sides of the substrate 100. Therefore, the capacitance between the base 130a and the collector 128 of the bipolar junction transistor 170 can be reduced, thereby improving the overall performance of the semiconductor structure.

In summary, in the semiconductor structure and the manufacturing method thereof according to the embodiment, the CMOS device and the bipolar transistor in the semiconductor structure can be effectively integrated, so as to improve the overall performance of the semiconductor structure. In the semiconductor structure and the manufacturing method thereof according to the embodiment, the capacitance between the base and the collector of the bipolar junction transistor of the semiconductor structure can be reduced, thereby improving the overall performance of the semiconductor structure.

Although the present invention has been described with reference to the above embodiments, it should be understood that the invention is not limited thereto, and that various changes and modifications can be made by those skilled in the art without departing from the spirit and scope of the invention.