阅读说明：本技术 一种在iii-v材料上镀高粘附性薄膜的方法 (Method for plating high-adhesion film on III-V material ) 是由 任慧群 崔虎山 邹志文 丁光辉 范思大 吴志浩 许开东 陈璐 于 2019-10-16 设计创作，主要内容包括：本发明公开了一种从III-V材料上,如III-V衬底或者和其之上形成的III-V器件结构,镀高粘附性薄膜的方法,具体是在PECVD反应腔室内采用非反应惰性气体等离子轰击III-V衬底及III-V器件结构,以去除III-V材料上的自然氧化层(如氧化铟、氧化镓等),然后再进行PECVD方式镀膜；所述非反应惰性气体选自氩气(Ar)、氦气(He)、氙气(Xe)、氖气(Ne)或氢气(H<Sub>2</Sub>)。本发明通过非反应惰性气体的等离子轰击,在不破真空环境下有效去除III-V自然氧化层,然后完成镀膜从而杜绝薄膜粘附性的问题。(The invention discloses a method for plating a high-adhesion film on a III-V material, such as a III-V substrate or a III-V device structure formed on the III-V substrate, which specifically comprises the steps of bombarding the III-V substrate and the III-V device structure by adopting non-reactive inert gas plasma in a PECVD reaction chamber to remove a natural oxide layer (such as indium oxide, gallium oxide and the like) on the III-V material, and then plating a film in a PECVD mode; the non-reactive inert gas is selected from argon (Ar), helium (He), xenon (Xe), neon (Ne) or hydrogen (H) 2 ). The method effectively removes the III-V natural oxide layer under the condition of no vacuum breaking through the plasma bombardment of non-reactive inert gas, and then finishes film coating, thereby avoiding the problem of film adhesion.)

1. A method for plating a high-adhesion film on a III-V material is characterized by comprising the following steps: bombarding the III-V substrate or the III-V device structure by adopting non-reactive inert gas plasma in a PECVD reaction chamber to remove a natural oxide layer on the III-V material, and then coating a film in a PECVD mode;

the non-reactive inert gas is selected from argon, helium, xenon, neon, hydrogen or any combination thereof.

2. The method of claim 1, wherein the non-reactive inert gas plasma bombardment is performed at a power of 10 ~ 1000W.

3. The method according to claim 1, wherein the volume flow rate of the non-reactive inert gas is 100 ~ 5000 scccm.

4. The method of claim 1, wherein the process pressure is 100 ~ 10000 mTorr.

5. The method according to any one of claims 2 to 4, wherein the process time is 1 ~ 300 s.

Technical Field

The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a method for plating a high-adhesion film on an IIII-V material.

Background

III-V semiconductor materials such as indium phosphide (InP), gallium arsenide (GaAs) and the like are very hot in the aspects of optical communication and 5G, but coating films (silicon oxide, silicon nitride and the like) on the substrate of the III-V semiconductor materials are not easy to realize, mainly because the adhesion of the film prepared by PECVD is too poor, and finally, the silicon oxide, the silicon nitride and the like adhered to a blue cutting film can not be torn off when a device is cut; in addition, the hydrogen causes the bubbling phenomenon of the metal film layer during the annealing process after the metal sputtering.

At present, a PECVD mode is mostly used for coating on a III-V substrate, the PECVD process is to slowly plate silicon oxide or silicon nitride dielectric films (several Å/min) at 200 ~ 300 ℃ and under the pressure of a 200 mTorr cavity, the purpose is to fully react to form silicon nitride and silicon oxide based on gases such as silane, ammonia gas, laughing gas and the like so as to reduce the hydrogen content and the number of dangling bonds in the films and enable the films to be compact enough, but natural oxide layers (such as indium oxide, gallium oxide and the like) formed on the surfaces of III-V compounds can reduce the adhesion of the films, cleaning modes such as diluted hydrochloric acid, diluted sulfuric acid and the like are generally added before the PECVD process, but samples are oxidized in the drying process, a low-speed deposition film is adopted, the film with the thickness of 300 ~ 500nm generally needs the process time of 20 ~ 30 minutes, and meanwhile, the cleaning of liquid chemical liquid is generally carried out under normal temperature and normal pressure and cannot be thoroughly isolated from oxygen.

Disclosure of Invention

Aiming at the defects of the prior art, the invention improves the precleaning method for the surface of the III-V material, namely, removes the natural oxidation layer of the III-V sample in the PECVD coating chamber, thereby increasing the adhesiveness of the dielectric film (silicon oxide and silicon nitride) to the III-V device.

In order to realize the beneficial effects, the invention adopts the following technical scheme:

a method for plating a high-adhesion film on a III-V material comprises the steps of bombarding the surface (a III-V substrate or a III-V device structure) of the III-V material by adopting non-reactive inert gas plasma in a PECVD reaction chamber to remove a III-V natural oxide layer (such as indium oxide, gallium oxide and the like), and then performing film plating in a PECVD mode;

the non-reactive inert gas is selected from argon (Ar), helium (He), xenon (Xe), neon (Ne), and hydrogen (H)₂) Or any combination thereof.

Further, the power of the non-reactive inert gas plasma bombardment was 10 ~ 1000W.

Further, the volume flow rate of the non-reactive inert gas is 100 ~ 5000 scccm.

Further, the process pressure of the non-reactive inert gas is 100 ~ 10000 mTorr.

Further, the process time was 1 ~ 300 s.

Has the advantages that: in general, chemical cleaning at normal temperature and pressure is not compatible with PECVD vacuum coating, and the surface of the sample is re-oxidized when the sample is dried. The method effectively removes the natural oxide layer on the surface of the III-V material in a vacuum-proof environment through the plasma bombardment of the non-reactive inert gas, and then finishes film coating, thereby avoiding the problem of film adhesion.

Detailed Description

The technical solution of the present invention is further described below with reference to specific examples.