阅读说明：本技术 一种晶体生长装置 (Crystal growth device ) 是由 沈伟民 王刚 于 2019-09-11 设计创作，主要内容包括：本发明提供一种晶体生长装置,包括：坩埚,配置为盛装用于晶体生长的熔体；加热器,设置于所述坩埚周围,配置为加热所述坩埚；导流套筒,所述导流套筒设置于所述加热器与所述坩埚之间；辅助结构,所述导流套筒与所述辅助结构连接,以将所述加热器的顶部和侧面包围。根据本发明提供的晶体生长装置,通过在加热器与坩埚之间设置导流套筒,且导流套筒与辅助结构可以连接组合以将所述加热器的顶部和侧面包围,避免了SiO蒸气对加热器表面的侵蚀,延长了加热器的使用寿命,提高了晶体生长品质的稳定性。(The present invention provides a crystal growth apparatus, comprising: a crucible configured to hold a melt for crystal growth; a heater disposed around the crucible and configured to heat the crucible; the flow guide sleeve is arranged between the heater and the crucible; and the flow guide sleeve is connected with the auxiliary structure so as to surround the top and the side of the heater. According to the crystal growth device provided by the invention, the flow guide sleeve is arranged between the heater and the crucible, and the flow guide sleeve and the auxiliary structure can be connected and combined to surround the top and the side of the heater, so that the corrosion of SiO steam to the surface of the heater is avoided, the service life of the heater is prolonged, and the stability of the crystal growth quality is improved.)

1. A crystal growth apparatus, comprising:

a crucible configured to hold a melt for crystal growth;

a heater disposed around the crucible and configured to heat the crucible;

the flow guide sleeve is arranged between the heater and the crucible;

and the flow guide sleeve is connected with the auxiliary structure so as to surround the top and the side of the heater.

2. The crystal growth apparatus of claim 1, wherein a lower surface of the flow sleeve is lower than a lower surface of the heater.

3. The crystal growth apparatus of claim 1, wherein the flow sleeve is spaced greater than 10mm from a surface adjacent the heater and the flow sleeve is spaced greater than 10mm from a surface adjacent the crucible.

4. The crystal growth apparatus of claim 1, wherein the flow sleeve has a thickness in a range from 2mm to 20 mm.

5. The crystal growth apparatus of claim 1, further comprising a furnace body and a heat insulation structure disposed on an inner wall of the furnace body, wherein the auxiliary structure covers the heat insulation structure.

6. The crystal growth apparatus of claim 1, wherein the auxiliary structure is integrally designed with the flow sleeve.

7. The crystal growth apparatus of claim 1, wherein the flow sleeve is of unitary construction or is assembled from a plurality of separate bodies.

8. The crystal growth apparatus of claim 1, wherein the flow sleeve is in the shape of a cylinder or a conical cylinder, or a combination of a cylinder and a conical cylinder.

9. The crystal growth apparatus of claim 1, wherein the flow sleeve comprises graphite or a carbon/carbon composite.

10. The crystal growth apparatus of claim 4, further comprising an exhaust disposed at a bottom of the crystal growth apparatus, wherein a distance from a center of the exhaust to a center of the furnace body is less than a radius of the flow sleeve.

11. The crystal growth apparatus of claim 1, wherein the crucible comprises a graphite crucible and a quartz crucible, the melt comprises a silicon melt, and the heater comprises a graphite heater.

Technical Field

The invention relates to the technical field of crystal growth, in particular to a crystal growth device.

Background

With the rapid development of the Integrated Circuit (IC) industry, device manufacturers have placed more stringent requirements on IC-grade silicon single crystal materials, which are the substrate materials necessary for device fabrication. The Czochralski method is the most important method for growing single crystal from melt in the prior art, and is characterized by that the raw materials for forming crystal are placed in a quartz crucible, heated and melted, then the crystal is pulled up by inoculating seed crystal on the surface of melt, under the controlled condition, the seed crystal and melt are continuously rearranged in atom or molecule on the interface, and then the crystal is gradually solidified with the cooling down so as to grow out the crystal.

Quartz crucible (SiO) in contact with silicon melt during silicon crystal growth₂) Part of the mixed gas is dissolved in the silicon melt, is diffused and mixed into argon gas on the surface of the silicon melt in the form of SiO gas, is pumped and discharged out of the furnace by a vacuum pump, and when the mixed gas passes through a graphite heater, the mixed gas reacts with graphite on the surface, so that the graphite of the heater is continuously eroded, the thickness and the width are gradually reduced, the resistance is gradually increased, and the unstable heating effect causes the unstable crystal growth quality.

Therefore, there is a need for a crystal growth apparatus to solve the above problems.

Disclosure of Invention

In this summary, concepts in a simplified form are introduced that are further described in the detailed description. This summary of the invention is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.

The present invention provides a crystal growth apparatus, comprising:

a crucible configured to hold a melt for crystal growth;

a heater disposed around the crucible and configured to heat the crucible;

the flow guide sleeve is arranged between the heater and the graphite crucible;

and the flow guide sleeve is connected with the auxiliary structure so as to surround the top and the side of the heater.

Further, the lower surface of the flow guide sleeve is lower than the lower surface of the heater.

Further, the distance between the flow guide sleeve and the surface adjacent to the heater is larger than 10mm, and the distance between the flow guide sleeve and the surface adjacent to the crucible is larger than 10 mm.

Further, the thickness range of the flow guide sleeve is 2mm-20 mm.

Furthermore, the crystal growth device also comprises a furnace body and a heat insulation structure arranged on the inner wall of the furnace body, and the auxiliary structure covers the heat insulation structure.

Further, the auxiliary structure and the flow guide sleeve are designed in an integrated mode.

Further, the flow guide sleeve is of an integral structure or formed by combining a plurality of split bodies.

Further, the shape of the flow guide sleeve is a cylinder or a cone, or the combination of the cylinder and the cone.

Further, the flow guide sleeve is made of graphite or carbon/carbon composite material.

Further, the crystal growth device also comprises an exhaust device, the exhaust device is arranged at the bottom of the crystal growth device, and the distance from the center of the exhaust device to the center of the furnace body is smaller than the radius of the flow guide sleeve.

Further, the crucible comprises a graphite crucible, the melt comprises a silicon melt, and the heater comprises a graphite heater.

According to the crystal growth device provided by the invention, the flow guide sleeve is arranged between the heater and the crucible, and the flow guide sleeve and the auxiliary structure can be connected and combined to surround the top and the side of the heater, so that the corrosion of SiO steam to the surface of the heater is avoided, the service life of the heater is prolonged, and the stability of the crystal growth quality is improved.

Drawings

The following drawings of the invention are included to provide a further understanding of the invention. There are shown in the drawings, embodiments and descriptions thereof, which are used to explain the principles and apparatus of the invention. In the drawings, there is shown in the drawings,

FIG. 1 is a schematic view of a prior art crystal growing apparatus;

fig. 2 is a schematic view of a crystal growing apparatus according to an exemplary embodiment of the present invention.

Reference numerals

1. Furnace body 2, crystal

3. Reflecting screen 4, melt

5. Crucible 6 and heater

7. Crucible lifting mechanism 8 and heat insulation structure

9. Vacuum pump 10 and flow guide sleeve

11. Auxiliary structure

Detailed Description

In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the invention.

In order to provide a thorough understanding of the present invention, detailed steps will be set forth in the following description in order to explain the crystal growing apparatus proposed by the present invention. It is apparent that the invention may be practiced without limitation to the specific details known to those skilled in the art. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.

In order to provide a thorough understanding of the present invention, detailed steps and detailed structures will be set forth in the following description in order to explain the present invention. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.

In the crystal growth apparatus shown in FIG. 1, during the growth of a crystal by the CZ method, a large amount of oxygen atoms are dissolved into the silicon melt due to high-temperature dissolution and diffusion of the inner wall of the quartz crucible which comes into contact with the silicon melt. Wherein most of the oxygen is freely escaped from the surface of the silicon melt to argon gas by the form of SiO vapor which reacts with graphite when passing through the graphite surface at high temperature of the heater 6:

sio (gas) +2c (solid) ═ co (gas) + sic (solid) (formula 1)

Further, since the vacuum pump 9 is provided at the bottom of the furnace body 1 to urge the SiO vapor to move downward of the furnace body 1, a large amount of the SiO vapor passes through the heater 6 and reacts with the high-temperature graphite surface.

Along with the reaction, CO gas and argon gas are discharged out of the furnace body through the vacuum pump 9, SiC is deposited on the surface of the graphite piece, and the graphite piece in the crystal growth device is continuously corroded by the reaction, particularly the high-temperature graphite surface of the heater 6. After a certain time or use times, the thickness and width of the graphite on the surface of the heater 6 will be reduced, and the resistance of the heater 6 will gradually increase; meanwhile, the heating range and the heating effect of the heater 6 are also changed, thereby causing unstable crystal growth quality.

In view of the above problems, the present invention provides a crystal growth apparatus, as shown in fig. 2, comprising:

a crucible 5 configured to hold a melt 4 for crystal growth;

a heater 6 disposed around the crucible 5 and configured to heat the crucible 5;

the flow guide sleeve 10 is arranged between the heater 6 and the crucible 5, and the flow guide sleeve 10 is arranged between the heater 6 and the crucible 5;

and the auxiliary structure 11, wherein the flow guide sleeve 10 is connected with the auxiliary structure 11 to surround the top and the side of the heater 6.

The crystal growth device shown in fig. 2 comprises a furnace body 1, wherein the furnace body 1 comprises a crucible 5, a heater 6 is arranged on the periphery of the crucible 5, a melt 4 is arranged in the crucible 5, a crystal 2 is arranged above the melt 4, and a reflecting screen 3 is arranged above the crucible 5 and surrounds the crystal 2. As an example, the melt 4 in the crucible 5 is a silicon melt and the growing crystal 2 is a single crystal silicon rod.

Illustratively, the furnace body 1 is a stainless steel cavity, and the furnace body 1 is vacuum or filled with protective gas. As an example, the shielding gas is argon, the purity of the shielding gas is more than 97%, the pressure is 5mbar-100mbar, and the flow rate is 70slpm-200 slpm.

Illustratively, the crucible 5 is made of a high temperature and corrosion resistant material, and the crucible 5 contains a melt 4 for crystal growth. In one embodiment, the crucible 5 comprises a quartz crucible and/or a graphite crucible, and the quartz crucible is put into the graphite crucible. The crucible 5 contains a silicon material, such as polycrystalline silicon. The silicon material is heated in the crucible 5 to a silicon melt for growing the single crystal silicon rod, and specifically, the seed crystal is immersed in the silicon melt, rotated and slowly pulled by the seed crystal shaft, so that silicon atoms grow along the seed crystal to the single crystal silicon rod. The seed crystal is formed by cutting or drilling a silicon single crystal with a certain crystal orientation, the common crystal orientation is <100>, <111>, <110> and the like, and the seed crystal is generally a cylinder.

Illustratively, a heater 6 is disposed on the periphery of the crucible 5, and the heater 6 is a graphite heater, and may be disposed on a side surface of the crucible 5 and configured to heat the crucible 5. Further, the heater 6 includes one or more heaters disposed around the crucible 5 to make the thermal field distribution of the crucible 5 uniform.

Illustratively, a reflecting screen 3 is also arranged in the furnace body 1, is positioned above the crucible 5, and is positioned outside the crystal 2 and surrounds the crystal 2, so that the heat of the melt 4 is prevented from being transferred to the furnace body 1 in the form of heat radiation and the like to cause heat loss.

Further, the crystal growth apparatus further includes a crucible elevating mechanism 7 configured to support and rotate the crucible shaft to effect elevation of the crucible 5.

Further, the crystal growth device also comprises a heat insulation structure 8 which is arranged on the inner wall of the furnace body 1 to prevent heat loss and realize heat preservation of the furnace body 1. The isolation structures 8 are located above and outside the heater 6.

Further, the crystal growth apparatus further includes a vacuum pump 9 configured to pump out the gas inside the furnace body 1. The vacuum pump 9 is provided at the bottom of the furnace body 1 to discharge the gas in the furnace body 1 from the lower side of the furnace body 1.

Set up vacuum pump 9 and adopt downside exhaust and set up vacuum pump 9 and adopt upside exhaust with furnace body 1 upper portion in furnace body 1 bottom and compare, upside exhaust leads to the heat loss on furnace body 1 upper portion great, presents the temperature inhomogeneous in the circumferencial direction moreover, leads to crystal growth yield to descend, and adopts downside exhaust to the temperature influence of crystal growth surrounding area less, has guaranteed the good growth of crystal.

As shown in fig. 2, the reflecting screen 3 is connected to the heat insulating structure 8 by a fixing structure to fix the reflecting screen 3 above the crucible 5. The fixed structure is generally a plate-like structure, and therefore, the existence of the fixed structure can avoid the circulation of gas above and below the fixed structure.

In one embodiment, the auxiliary structure 11 may comprise a portion of the structure that is present in the crystal growing apparatus and is attached to the flow sleeve 10 to form an open-bottomed enclosure that encloses the top and sides of the heater 6. As an example, as shown in fig. 2, the auxiliary structure 11 covers the heat insulation structure 8, the heat insulation structure 8 is originally located above and outside the heater 6, and after it is connected with the flow guide sleeve 10, the flow guide sleeve 10 is connected with the auxiliary structure 11 covering the heat insulation structure 8, and forms a cover structure surrounding the top and the side of the heater 6 as shown in fig. 2, and the bottom of the heater 6 is exposed.

In another embodiment, the auxiliary structure 11 is a structure designed for the crystal growing apparatus of the present invention, and is integrally designed with the flow guide sleeve 10 or combined with the flow guide sleeve 10 to form a cover with only a bottom opening, surrounding the top and sides of the heater 6.

Illustratively, the length of the flow sleeve 10 should be at least such that the height of the heated region of the heater 6 (e.g., the portion of the heater 6 through which current passes) is above the bottom of the flow sleeve 10 to avoid reaction of the SiO vapor with the high temperature graphite surface of the heater 6. Preferably, the lower surface of the flow guide sleeve 10 is lower than the lower surface of the heater 6.

Further, the thickness of the flow guide sleeve 10 is preferably set to be 2mm to 20 mm. By controlling the thickness range of the flow guide sleeve 10, the flow guide sleeve 10 can realize the effect of blocking SiO steam under the condition of not influencing the heat radiation of the heater 6 to the crucible 5.

The heater 6 can be separated from the gas flow channel by forming a cover body which surrounds the top and the side of the heater 6, as shown in fig. 2, under the action of the vacuum pump 9, SiO steam flows from the upper part of the crucible 5 to the bottom of the furnace body 1 and is discharged, and under the isolation action of the flow guide sleeve 10, the SiO steam does not pass through the heater 6, so that the reaction of the SiO steam and the high-temperature graphite surface of the heater 6 is avoided.

By reducing the erosion loss of the heater 6, the service life of the heater 6 is extended, and specifically, the number of times of use of the heater 6 is extended from 30 times to 80 times or more. Likewise, as the erosion of the heater 6 slows, the frequency of adjustments of the process parameters during crystal growth decreases, specifically from every batch to every 5 batches.

Alternatively, the heater 6 is only enclosed at the top and sides, and not at the bottom by the enclosure of the flow sleeve 10 and the auxiliary structure 11 described above.

Through set up the opening in cover body below, make the bottom of heater 6 expose, compare with utilizing the cover body to surround heater 6 completely, there is not obvious difference in the erosion of SiO vapour to heater 6 surface, and the bottom opening is favorable to the cleanness, the maintenance and the maintenance of equipment, simple structure, the processing of being convenient for simultaneously, the cost is reduced.

In one embodiment, the heater 6 is surrounded by a casing formed by the flow sleeve 10 and the auxiliary structure 11, but at a distance from the heater 6. Preferably, the distance between the surface of the flow guide sleeve 10 adjacent to the heater 6 is greater than 10mm, and the distance between the surface of the flow guide sleeve 10 adjacent to the crucible 5 is greater than 10 mm. Specifically, the distance between the outer surface of the flow guide sleeve 10 on the side away from the crucible 5 and the inner surface of the heater 6 on the side close to the crucible 5 is greater than 10mm, and the distance between the inner surface of the flow guide sleeve 10 on the side close to the crucible 5 and the outer surface of the crucible 5 is greater than 10 mm.

Illustratively, the flow sleeve 10 is in the shape of a cylinder or a cone, or a combination of a cylinder and a cone. Further, the distance from the center of the exhaust device to the center of the furnace body 1 is smaller than the radius of the flow guide sleeve 10. In one embodiment, the distance from the vacuum pump 9 to the bottom center of the furnace body 1 is smaller than the radius of the flow guide sleeve 10 so that the SiO vapor is discharged out of the furnace body 1 downward along the inner surface of the flow guide sleeve 10 to avoid the SiO vapor from contacting the heater 6.

Illustratively, the material of construction of the flow sleeve 10 includes graphite or a carbon/carbon composite. In one embodiment, the material of construction of flow sleeve 10 is high purity graphite. In another embodiment, the flow sleeve 10 is made of a carbon/carbon composite material, which is a carbon matrix composite material reinforced with carbon fibers and fabrics thereof, and has the advantages of low density, high strength, high specific modulus, high thermal conductivity, low expansion coefficient, good friction performance, good thermal shock resistance, high dimensional stability, and the like.

By adopting the graphite or carbon/carbon composite material with high temperature resistance and good heat preservation effect to manufacture the flow guide sleeve 10, the flow guide sleeve 10 can realize the function of gas flow guide, the heat preservation effect around the crucible 5 can be enhanced, and the crystal growth quality is more stable.

According to the crystal growth device provided by the invention, the flow guide sleeve is arranged between the heater and the crucible, and the flow guide sleeve and the auxiliary structure can be connected and combined to surround the top and the side of the heater, so that the corrosion of SiO steam to the surface of the heater is avoided, the service life of the heater is prolonged, and the stability of the crystal growth quality is improved.

The present invention has been illustrated by the above embodiments, but it should be understood that the above embodiments are for illustrative and descriptive purposes only and are not intended to limit the invention to the scope of the described embodiments. Furthermore, it will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that many variations and modifications may be made in accordance with the teachings of the present invention, which variations and modifications are within the scope of the present invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.