阅读说明：本技术 一种用于晶体生长的坩埚底座装置 (A kind of stool device for crystal growth ) 是由 陈强 邓先亮 赵言 王宗会 于 2019-09-06 设计创作，主要内容包括：本发明提供一种用于晶体生长的坩埚底座装置,包括:底座本体,所述底座本体的上表面的一部分与坩埚相接触；连接机构,配置为将所述底座本体与所述坩埚固定连接。根据本发明提供的一种用于晶体生长的坩埚底座装置,通过使底座本体的上表面的一部分与坩埚相接触,减少坩埚底座装置与坩埚的接触面积,从而减少了通过固固传热的方式散失的热量,提高了热场的保温性,减少电能的消耗,延长了设备的使用寿命,降低了生产成本。(The present invention provides a kind of stool device for crystal growth, comprising: a part of base body, the upper surface of the base body is in contact with crucible；Bindiny mechanism is configured to for the base body being fixedly connected with the crucible.A kind of stool device for crystal growth provided according to the present invention, by making a part of the upper surface of base body be in contact with crucible, reduce the contact area of stool device and crucible, to reduce the dispersed heat by way of conducting heat admittedly, improve the heat insulating ability of thermal field, the consumption for reducing electric energy, extends the service life of equipment, reduces production cost.)

1. a kind of stool device for crystal growth characterized by comprising

A part of base body, the upper surface of the base body is in contact with crucible；

Bindiny mechanism is configured to for the base body being fixedly connected with the crucible.

2. stool device as described in claim 1, which is characterized in that the base body includes pedestal and protruding portion Point, the upper surface of the protrusion is in contact with the crucible.

3. stool device as described in claim 1, which is characterized in that the protrusion includes one or more annulus Shape or the prominent structure of polygon.

4. stool device as described in claim 1, which is characterized in that the protrusion includes the circle of multiple protrusions Column.

5. stool device as described in claim 1, which is characterized in that the base body include outer housing part and Internal fill part.

6. stool device as claimed in claim 5, which is characterized in that the constituent material of the outer housing part is led For hot coefficient lower than the thermal coefficient of the constituent material of the crucible, the constituent material of the outer housing part includes continuous fiber Composite material, the constituent material of the crucible include graphite.

7. stool device as claimed in claim 5, which is characterized in that the constituent material of the internal fill part is led For hot coefficient lower than the thermal coefficient of the constituent material of the outer housing part, the internal fill part includes the hard felt of graphite And/or graphite soft felt.

8. stool device as claimed in claim 2, which is characterized in that be provided with connecting hole, institute on the protrusion Stating bindiny mechanism includes the bolt with connecting hole cooperation.

9. stool device as described in claim 1, which is characterized in that the constituent material of the bindiny mechanism includes continuous Fibrous composite or graphite.

Technical field

The present invention relates to technical field of crystal growth, fill in particular to a kind of stool for crystal growth It sets.

Background technique

With the fast development of integrated circuit (Integrated Circuit, IC) industry, device manufacturer is to IC grades of silicon Monocrystal material proposes more strict requirements, and large-diameter monocrystalline silicon is substrate material necessary to preparing device.Czochralski method (Czochralski, CZ method) is a most important method by melt growth monocrystalline in the prior art, specific practice be by The raw material for constituting crystal, which is placed in crucible, heats fusing, connects seed crystal lifting melt in bath surface, under controlled conditions, makes seed crystal Rearranging for atom or molecule is constantly carried out on interface with melt, gradually solidified with cooling and grows crystal.

Crystal growing process needs a large amount of heat to provide, so if the thermal insulation property of thermal field is poorer, then to maintain The normal table growth of crystal then needs to provide amount of heat to it, to consume more electric energy and increase production cost.It is existing Crucible and its pedestal mostly use graphite material greatly, the thermal coefficient of graphite material is relatively high, and crucible and its pedestal Contact area is larger, causes a large amount of heat to export by way of conducting heat admittedly from crucible axis, causes a large amount of heat leakage.

Therefore, it is necessary to a kind of new stool device for crystal growth be proposed, to solve the above problems.

Summary of the invention

A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into One step is described in detail.Summary of the invention is not meant to attempt to limit technical solution claimed Key feature and essential features do not mean that the protection scope for attempting to determine technical solution claimed more.

The present invention provides a kind of stool device for crystal growth, comprising:

A part of base body, the upper surface of the base body is in contact with crucible；

Bindiny mechanism is configured to for the base body being fixedly connected with the crucible.

Further, the base body includes pedestal and protrusion, the upper surface of the protrusion and the crucible It is in contact.

Further, the protrusion includes one or more circular ring shapes or the prominent structure of polygon.

Further, the protrusion includes the cylinder of multiple protrusions.

Further, the base body includes outer housing part and internal fill part.

Further, the thermal coefficient of the constituent material of the outer housing part is lower than leading for the constituent material of the crucible Hot coefficient, the constituent material of the outer housing part include continuous fiber composite material, and the constituent material of the crucible includes Graphite.

Further, the thermal coefficient of the constituent material of the internal fill part is lower than the composition of the outer housing part The thermal coefficient of material, the internal fill part includes the hard felt of graphite and/or graphite soft felt.

Further, connecting hole is provided on the protrusion, the bindiny mechanism includes cooperating with the connecting hole Bolt.

Further, the constituent material of the bindiny mechanism includes continuous fiber composite material or graphite.

A kind of stool device for crystal growth provided according to the present invention, by the upper surface for making base body A part be in contact with crucible, reduce stool device and crucible contact area, to reduce by conducting heat admittedly Mode dispersed heat, improve the heat insulating ability of thermal field, reduce the consumption of electric energy, extend the service life of equipment, reduce Production cost.

Detailed description of the invention

The embodiment of the present invention is described in more detail in conjunction with the accompanying drawings, the above and other purposes of the present invention, Feature and advantage will be apparent.Attached drawing is used to provide to further understand the embodiment of the present invention, and constitutes explanation A part of book, is used to explain the present invention together with the embodiment of the present invention, is not construed as limiting the invention.In the accompanying drawings, Identical reference label typically represents same parts or step.

In attached drawing:

Fig. 1 shows the schematic diagram of the long crystal furnace according to an exemplary embodiment of the present invention for crystal growth；

Fig. 2 shows a kind of signals of the stool device for crystal growth according to an exemplary embodiment of the present invention Property sectional view；

Fig. 3 shows a kind of signal of stool device for crystal growth according to an exemplary embodiment of the present invention Property cross-sectional view.

Specific embodiment

In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.So And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to Implement.In other examples, in order to avoid confusion with the present invention, for some technical characteristics well known in the art not into Row description.

In order to thoroughly understand the present invention, detailed step will be proposed in following description, to illustrate proposition of the present invention A kind of stool device for crystal growth.Obviously, execution of the invention is not limited to the technology of semiconductor field The specific details that personnel are familiar with.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, this Invention can also have other embodiments.

It should be understood that when the term " comprising " and/or " including " is used in this specification, indicating described in presence Feature, entirety, step, operation, element and/or component, but do not preclude the presence or addition of other one or more features, entirety, Step, operation, element, component and/or their combination.

Fig. 1 shows the schematic diagram provided by exemplary embodiment of the present for the long crystal furnace of crystal growth, such as Fig. 1 Shown, the long crystal furnace is used to use Grown by CZ Method silicon single crystal, including furnace body 101, and heating device is equipped in furnace body 101 and is mentioned Drawing device.Heating device includes silica crucible 102, graphite crucible 103, heater 104.Wherein, silica crucible 102 is for holding Silicon material, such as polysilicon.Silicon material is heated to be silicon melt 105 wherein.Graphite crucible 103 is wrapped in the outer of silica crucible 102 Side, for providing support to silica crucible 102 during heating, the outside of graphite crucible 103 is arranged in heater 104.Stone Heat shielding 106 is provided with above English crucible 102, the heat shielding 106 has the back taper of downwardly extending circular 107 growth district of silicon single crystal Shield shape object, the direct heat radiation of heater 104 and 105 pairs of the high temperature silicon melt monocrystalline silicon crystal bars 107 grown can be blocked, reduces single The temperature of crystal silicon crystal bar 107.Meanwhile heat shielding can also make under blow protection gas concentration be directly sprayed near growth interface, into one The heat dissipation of step enhancing monocrystalline silicon crystal bar 107.Thermal insulation material, such as carbon felt are additionally provided on 101 side wall of furnace body.

Pulling apparatus includes the seed shaft 108 being vertically arranged and crucible axis 109, and seed shaft 108 is arranged in silica crucible 102 Top, the bottom of graphite crucible 103 is arranged in crucible axis 109, and the bottom of seed shaft 108 is equipped with seed crystal by fixture, Top connects seed crystal axial brake device, can Xiang Shang while rotating and slowly lift.The bottom of crucible axis 109 is equipped with earthenware Crucible axial brake device makes crucible axis 109 be able to drive crucible and is rotated.

Crucible axis 109 is connected with graphite crucible 103 by stool 104, in one embodiment, graphite crucible 103 use integrated design with stool 104, and in another embodiment, stool 104 includes but is not limited to cylinder The shapes such as body, square, frustum, halfpace, entire upper surface are in contact with graphite crucible 103.

When carrying out crystal growth, silicon material is launched in silica crucible 102 first, long crystal furnace is then switched off and vacuumizes, Protective gas is filled in long crystal furnace.Illustratively, the protective gas is argon gas, and purity is 97% or more, and pressure is 5mbar-100mbar, flow 70slpm-200slpm.Then, open heater 104, be heated to 1420 DEG C of fusion temperature with On, so that silicon material is all molten into silicon melt 105.

Then, seed crystal is immersed in silicon melt 105, drive seed crystal to rotate by seed shaft 108 and slowly lifted, so that silicon Atom is monocrystalline silicon crystal bar 107 along seeded growth.The seed crystal is the silicon single crystal cutting by certain crystal orientation or drills through, and is commonly used Crystal orientation be<100>,<111>,<110>etc., the seed crystal is generally cylindrical body.The long brilliant process of monocrystalline silicon crystal bar 107 is successively Including seeding, shouldering, turn shoulder, isometrical and ending several stages.

Specifically, the seeding stage is carried out first.I.e. after silicon melt 105 is stabilized to certain temperature, seed crystal immersion silicon is melted In body, seed crystal is promoted with certain pulling rate, makes thin neck of the silicon atom along seeded growth certain diameter, until thin neck reaches To predetermined length.The main function of the seeding process is to eliminate the dislocation for causing monocrystalline silicon to be formed because of thermal shock and lack It falls into, is arranged in order on the silicon solid of solid liquid interface using the degree of supercooling driving silicon atom of crystallization front, forms monocrystalline silicon.Show Example property, the pulling rate is 1.5mm/min-4.0m/min, and thin neck length degree is 0.6-1.4 times of boule diameter, and thin neck diameter is 5-7mm。

Then, into the shouldering stage, after thin neck reaches predetermined length, slow down the speed that the seed crystal lifts upwards, It is decreased slightly as the temperature of low silicon melt simultaneously, carrying out cooling is the cross growth in order to promote the monocrystalline silicon, even if the monocrystalline silicon Enlarged diameter, which is known as the shouldering stage, which is formed by the shouldering section that taper crystal bar is crystal bar.

Then, into turning the shoulder stage.When the diameter of monocrystalline silicon increases to aimed dia, by improving heater 104 Heating power, increases the temperature of silicon melt, while adjusting speed, the speed of rotation and quartzy earthenware that the seed crystal lifts upwards The rotation speed etc. of crucible, inhibits the cross growth of the monocrystalline silicon, promotes its longitudinal growth, makes the intimate equal diameter of the monocrystalline silicon Growth.

Then, into the isometrical stage.After monocrystalline silicon crystal bar diameter reaches predetermined value, into isometrical stage, the stage It is formed by isometrical section that cylindrical crystal bar is crystal bar.Specifically, crucible temperature, pulling rate, crucible rotation and crystal are adjusted Revolving speed stablizes growth rate, remains unchanged crystal diameter, until crystal pulling finishes.Isometrical process is the master of monocrystalline silicon growing The stage is wanted, up to number growth in even more than 100 hours tens hours.

Finally, into finishing phase.When ending, accelerates to promote rate, raise simultaneously the temperature of silicon melt 105, make crystal bar Diameter gradually becomes smaller, and forms a cone, when cone is sufficiently small, it eventually leaves liquid level.It will complete the crystal bar of ending It is taken out after rising to furnace chamber cooling a period of time, that is, completes a growth cycle.

Make a large amount of heat from crucible axis 109 by way of conducting heat admittedly for graphite crucible 103 and stool 110 The problem of exporting, causing a large amount of heat leakage, the present invention provides a kind of stool device for crystal growth, such as Fig. 2 With shown in Fig. 3, comprising:

A part of base body, the upper surface of the base body is in contact with crucible；

Bindiny mechanism is configured to for the base body being fixedly connected with the crucible.

Illustratively, as shown in Fig. 2, the base body includes pedestal 201 and protrusion 202, the protrusion 202 upper surface is in contact with the crucible.Further, between the protrusion 202 there are groove, and the pedestal sheet Only the upper surface of protrusion 202 is in contact body with the crucible, to realize a part of the upper surface of the base body It is in contact with crucible, reduces the contact area between base body and crucible.

Illustratively, the protrusion 202 and pedestal 201 are solid using integrated design or the protrusion 202 It is scheduled on 201 on the pedestal.The shape of the pedestal 201 and the shape of the protrusion are identical or different, it is preferable that described Pedestal includes round or square.

In one embodiment, the protrusion 202 includes one or more circular ring shapes or the prominent structure of polygon, example Such as triangle, square, rectangle or hexagon, to realize that a part of base body only upper surface is in contact with crucible, Reduce the contact area between base body and crucible.Further, as shown in Figures 2 and 3, the protrusion 202 includes circle Annular, wherein the multiple annulus outstanding can be concentric loop.Further, the quantity of the annulus outstanding can basis Demand is increased and decreased, such as the quantity of annulus can be selected according to support strength.

In another embodiment, the cylinder of the protrusion 202 including multiple protrusions, the diameter of the cylinder compared with It is small, so as to point contact be realized between base body and crucible, to realize base body only a part of upper surface and crucible phase Contact reduces the contact area between base body and crucible.Further, the quantity of the cylinder of the protrusion generally includes three Or more, the cylinder of the multiple protrusion can be arranged using any way, including line up triangle, quadrangle, irregular Polygon, dispersion shape or irregular arrangement.Further, the area of section of the cylinder of each protrusion is much smaller than the pedestal 201 Area of section, for example, each protrusion cylinder area of section be the pedestal 201 area of section 1/10 to 1/1000.

Pass through the contact area reduced between stool device and crucible, it is possible to reduce by way of conducting heat admittedly from Heat derived from crucible axis 109 improves the heat insulating ability of thermal field, reduces the consumption of electric energy, extends the service life of heating device, drop Low production cost.

Illustratively, the base body includes outer housing part and internal fill part.Further, the external shell Body portion includes hard moulding material, and the internal fill part includes flexible cellular material and/or rigid porous material.

Further, the thermal coefficient of the constituent material of the outer housing part is lower than the thermal coefficient of graphite, described interior The thermal coefficient of the constituent material of portion's fill part is lower than the constituent material of the outer housing part.

As an example, the constituent material of the outer housing part includes but is not limited to continuous fiber composite material (continuous fibre composite, CFC), with graphite-phase ratio, the thermal coefficient of CFC material is about 40W/ (mK), The thermal coefficient of graphite is about 90W/ (mK), and the capacity of heat transmission of CFC material is much smaller than graphite, it is possible to reduce via base body And then by heat derived from crucible axis, in addition, the intensity of CFC material is about 200MPa, the intensity of graphite is about 100MPa, because This uses the stool of CFC material that can provide better support for crucible.

As an example, the constituent material of the internal fill part includes but is not limited to the hard felt of graphite and/or graphite The loose porous heat-barrier material such as soft felt.Wherein, the thermal coefficient of the hard felt of graphite is about 0.7W/ (mK), and graphite soft felt is led Hot coefficient is about 0.3W/ (mK), is much smaller than the thermal coefficient of CFC and graphite, is further reduced via base body in turn Pass through heat derived from crucible axis.In addition, the intensity of the hard felt of graphite is about 1MPa, the intensity of graphite soft felt is about 0MPa, is convenient for It is filled in base body with arbitrary form.

Further, internal fill part include only the hard felt of graphite, the only hard felt of graphite soft felt, graphite and graphite soft felt it is compound, The hard felt of graphite and the multi-layer intercrossed equal filling forms of graphite soft felt, to realize better heat insulation.

Stool device is made by using the low material of thermal coefficient, it is possible to reduce be transmitted to stool from crucible Device and then the heat derived from the crucible axis 109, improve the heat insulating ability of thermal field, reduce the consumption of electric energy, extend heating device Service life reduces production cost.

Stool device provided by the present invention for crystal growth further includes bindiny mechanism, is configured to the pedestal Ontology is fixedly connected with the crucible.

Illustratively, the bindiny mechanism includes the bolt with connecting hole cooperation.Further, the connecting hole and spiral shell The quantity of bolt can be increased and decreased according to demand, such as the quantity of connecting hole and bolt is selected according to requirement of strength design.Such as Fig. 3 It is shown, it is provided with multiple connecting holes on the base body, is connected with being fixed the base body and the crucible using bolt It connects.Further, the connecting hole is arranged on the protrusion of the base body.

Illustratively, the bindiny mechanism is made of hard insulating material, including but not limited to graphite, CFC etc..

A kind of stool device for crystal growth provided according to the present invention, by the upper surface for making base body A part be in contact with crucible, reduce stool device and crucible contact area, to reduce by conducting heat admittedly Mode dispersed heat, improve the heat insulating ability of thermal field, reduce the consumption of electric energy, extend the service life of equipment, reduce Production cost.

The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only intended to The purpose of citing and explanation, is not intended to limit the invention to the scope of the described embodiments.Furthermore those skilled in the art It is understood that the present invention is not limited to the above embodiments, introduction according to the present invention can also be made more kinds of member Variants and modifications, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention by The appended claims and its equivalent scope are defined.