阅读说明：本技术 一种晶体生长装置 (A kind of crystal growing apparatus ) 是由 沈伟民 王刚 于 2019-09-11 设计创作，主要内容包括：本发明提供一种晶体生长装置,包括：坩埚,配置为盛装用于晶体生长的熔体；加热器,设置于所述坩埚周围,配置为加热所述坩埚；均热套筒,所述均热套筒设置于所述加热器与所述坩埚之间,所述均热套筒的侧壁包括厚壁区域和薄壁区域,其中,所述薄壁区域与高温区域对应设置,所述厚壁区域与低温区域对应设置。根据本发明提供的晶体生长装置,通过在加热器与坩埚之间设置于,所述均热套筒的侧壁包括厚壁区域和薄壁区域,利用壁厚的不同调节加热器对石墨坩埚辐射能量,平衡温度的影响,使坩埚在旋转中从晶体生长装置辐射的热量尽可能相同。(The present invention provides a kind of crystal growing apparatus, comprising: crucible is configured to contain the melt for being used for crystal growth；Heater is set to around the crucible, is configured to heat the crucible；Soaking sleeve, the soaking sleeve are set between the heater and the crucible, and the side wall of the soaking sleeve includes thick wall area and thin-wall regions, wherein the thin-wall regions are correspondingly arranged with high-temperature area, and the thick wall area is correspondingly arranged with low-temperature region.The crystal growing apparatus provided according to the present invention, by being set between heater and crucible, the side wall of the soaking sleeve includes thick wall area and thin-wall regions, using the different adjustment heater of wall thickness to graphite crucible radiation energy, the influence of equilibrium temperature, the heat for radiating crucible in rotation from crystal growing apparatus are as identical as possible.)

1. a kind of crystal growing apparatus characterized by comprising

Crucible is configured to contain the melt for being used for crystal growth；

Heater is set to around the crucible, is configured to heat the crucible；

Soaking sleeve, the soaking sleeve are set between the heater and the crucible, the side wall packet of the soaking sleeve Include thick wall area and thin-wall regions, wherein the thin-wall regions are correspondingly arranged with high-temperature area, the thick wall area and low-temperature space Domain is correspondingly arranged.

2. crystal growing apparatus as described in claim 1, which is characterized in that the inner wall of the thick wall area and the crucible it Between distance be less than inside and the distance between described crucible of the thin-wall regions.

3. crystal growing apparatus as described in claim 1, which is characterized in that the high-temperature area include the heater or The heating region of the heater, the heating region of the heater include the electrode being powered.

4. crystal growing apparatus as described in claim 1, which is characterized in that the low-temperature region includes between the heater Interval or the heater non-heated region, the non-heated region of the heater includes cold electrode.

5. crystal growing apparatus as described in claim 1, which is characterized in that the thickness of the thick wall area and the thin-wall regions Spending poor range is 2mm to 10mm.

6. crystal growing apparatus as described in claim 1, which is characterized in that the soaking sleeve is divided into multiple heavy walls Region and multiple thin-wall regions, the thick wall area are arranged alternately with the thin-wall regions.

7. crystal growing apparatus as described in claim 1, which is characterized in that the soaking sleeve is for overall construction or by more A Split assembled forms.

8. crystal growing apparatus as described in claim 1, which is characterized in that the constituent material of the soaking sleeve includes graphite Or celion material.

Technical field

The present invention relates to technical field of crystal growth, in particular to a kind of crystal growing apparatus.

Background technique

With the fast development of integrated circuit (Integrated Circuit, IC) industry, device manufacturer is to IC grades of silicon Monocrystal material proposes more strict requirements, and large-diameter monocrystalline silicon is substrate material necessary to preparing device.Czochralski method (Czochralski, CZ method) is a most important method by melt growth monocrystalline in the prior art, specific practice be by The raw material for constituting crystal, which is placed in silica crucible, heats fusing, connects seed crystal lifting melt in bath surface, under controlled conditions, makes Seed crystal and melt constantly carry out rearranging for atom or molecule on interface, gradually solidify with cooling and grow crystal.

The circular crucible of heater is arranged in existing crystal growing apparatus, however, usually ring heater use will be multiple Only portion electrified regulation in the setting of heater interval or heater, therefore, heating region is uneven in a circumferential direction It is even, such as the low variation of high-low-high-can be presented in heater its temperature on the circumferencial direction of some height and position, and Heat radiation cause rotation in graphite crucible surface temperature also can generating period variation, graphite crucible occur thermal cycle answer Power shortens the service life of crucible.

Therefore, it is necessary to a kind of new crystal growing apparatus be proposed, to solve the above problems.

Summary of the invention

A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into One step is described in detail.Summary of the invention is not meant to attempt to limit technical solution claimed Key feature and essential features do not mean that the protection scope for attempting to determine technical solution claimed more.

The present invention provides a kind of crystal growing apparatus, comprising:

Crucible is configured to contain the melt for being used for crystal growth；

Heater is set to around the crucible, is configured to heat the crucible；

Soaking sleeve, the soaking sleeve are set between the heater and the crucible, the side of the soaking sleeve Wall includes thick wall area and thin-wall regions, wherein the thin-wall regions are correspondingly arranged with high-temperature area, the thick wall area with it is low Temperature area is correspondingly arranged.

Further, the distance between the inner wall of the thick wall area and the crucible be less than the thin-wall regions inside with The distance between described crucible.

Further, the high-temperature area includes the heating region of the heater or the heater, the heater Heating region include be powered electrode.

Further, the low-temperature region includes the unheated zone at the interval or the heater between the heater Domain, the non-heated region of the heater include cold electrode.

Further, the thick wall area and the thickness difference range of the thin-wall regions are 2mm to 10mm.

Further, the soaking sleeve is divided into multiple thick wall areas and multiple thin-wall regions, the heavy wall Region is arranged alternately with the thin-wall regions.

Further, the soaking sleeve is overall construction or is formed by multiple Split assembleds.

Further, the constituent material of the soaking sleeve includes graphite or celion material.

The crystal growing apparatus provided according to the present invention, by being set between heater and crucible, the equal hot jacket The side wall of cylinder includes that thick wall area and thin-wall regions are put down using the different adjustment heater of wall thickness to graphite crucible radiation energy The influence for the temperature that weighs, the heat for radiating graphite crucible in rotation from crystal growing apparatus are as identical as possible.

Detailed description of the invention

Following drawings of the invention is incorporated herein as part of the present invention for the purpose of understanding the present invention.Shown in the drawings of this hair Bright embodiment and its description, device used to explain the present invention and principle.In the accompanying drawings,

The schematic diagram of Fig. 1 crystal growing apparatus according to an exemplary embodiment of the present invention；

The sectional view of Fig. 2 crystal growing apparatus according to an exemplary embodiment of the present invention.

Appended drawing reference

1, furnace body 2, crystal

3, radiation shield 4, melt

5, crucible 6, heater

7, crucible lift mechanism 8, heat insulation structural

9, soaking sleeve

Specific embodiment

In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.So And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to Implement.In other examples, in order to avoid confusion with the present invention, for some technical characteristics well known in the art not into Row description.

In order to thoroughly understand the present invention, detailed step will be proposed in following description, to illustrate proposition of the present invention Crystal growing apparatus.Obviously, execution of the invention is not limited to the specific details that those skilled in the art is familiar with.This The preferred embodiment of invention is described in detail as follows, however other than these detailed descriptions, the present invention can also have other implementations Mode.

The purpose of term as used herein is only that description specific embodiment and not as limitation of the invention.Make herein Used time, " one " of singular, "one" and " described/should " be also intended to include plural form, unless the context clearly indicates separately Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation, The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related listed item and institute There is combination.

In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to Illustrate technical solution proposed by the present invention.Presently preferred embodiments of the present invention is described in detail as follows, however in addition to these detailed descriptions Outside, the present invention can also have other embodiments.

Crystal growing apparatus as shown in Figure 1, including furnace body 1, include crucible 5 in the furnace body 1, the crucible 5 it is outer Setting having heaters 6 is enclosed, has melt 4 in the crucible 5, the top of the melt 4 is crystal 2, and the top of the crucible 5 surrounds The crystal 2 is provided with radiation shield 3.As an example, the melt 4 in crucible 5 is silicon melt, and the crystal 2 of growth is monocrystalline Silicon rod.

Illustratively, the furnace body 1 is stainless steel cavity, for vacuum or full of protective gas in the furnace body 1.As One example, the protective gas are argon gas, and purity is 97% or more, pressure 5mbar-100mbar, and flow is 70slpm-200slpm。

Illustratively, the crucible 5 is made of corrosion-and high-temp-resistant material, is loaded in crucible 5 for crystal growth Melt.In one embodiment, crucible 5 includes silica crucible and/or graphite crucible, is loaded with silicon material, such as polycrystalline in crucible 5 Silicon.Silicon material is heated to be the silicon melt for growing silicon single crystal rod in crucible 5, and specifically, seed crystal is immersed in silicon melt, is led to It crosses seed shaft to drive seed crystal to rotate and slowly lift, so that silicon atom is silicon single crystal rod along seeded growth.The seed crystal is by one Determine the silicon single crystal cutting of crystal orientation or drill through, common crystal orientation is<100>,<111>,<110>etc., and the seed crystal is generally justified Cylinder.

Illustratively, the periphery setting having heaters 6 of the crucible 5, the heater 6 is graphite heater, Ke Yishe It sets in the side of crucible 5, is configured to heat crucible 5.Further, the heater 6 includes being configured around crucible 5 One or more heaters so that the heterogeneity phantom of crucible 5 is uniform.

Illustratively, it is additionally provided with radiation shield 3 in furnace body 1, is located at the top of crucible 5, and be located at the outside of crystal 2 It is arranged around the crystal 2, avoids the heat of melt 4 from being transmitted in furnace body 1 in the form of heat radiation etc., cause heat loss.

Further, crystal growing apparatus further includes crucible lift mechanism 7, is configured to support and rotate crucible axis, to realize The lifting of crucible 7.

Further, crystal growing apparatus further includes heat insulation structural 8, is set to the inside sidewalls of furnace body 1, to prevent heat from dissipating The heat preservation of unfounded existing furnace body 1.As shown in Figure 1, radiation shield 3 is connected by fixed structure with heat insulation structural 8, radiation shield 3 is consolidated It is scheduled on the top of crucible 5.

However, in the prior art, heating region in a circumferential direction be it is non-uniform, this is will be between multiple heaters Every in setting or a heater only caused by portion electrified regulation.In one embodiment, heater 6 is circular ring shape Single heater, circular crucible 5 is arranged, but the circular ring shape heater is furnished with multiple (for example, four) graphite electrode seats, Gu It is scheduled on four electrode positions of furnace body 1, wherein two opposite electrodes are passed through heated current, other two is only used for fixed add Hot device 6.The electrode of furnace body 1 reduces the temperature of metal copper electrode, therefore the regional temperature of cold electrode position using water cooling Lower than the regional temperature of powered electrode position, therefore in certain altitude position, circumferencial direction is presented the low temperature of high-low-high-and becomes Change, which causes the heat for being radiated crucible 5 to be also fluctuation, and then causes crucible 5 that thermal cycling stresses occur, and shortens The service life of crucible 5.

In view of the above-mentioned problems, the present invention provides a kind of crystal growing apparatus, comprising:

Crucible 5 is configured to contain the melt 4 for being used for crystal growth；

Heater 6 is set to around the crucible 5, is configured to heat the crucible 5；

Soaking sleeve 9, the soaking sleeve 9 are set between the heater 6 and the crucible 5, the soaking sleeve 9 Side wall include thick wall area and thin-wall regions, wherein the thin-wall regions are correspondingly arranged with high-temperature area, the thick wall area It is correspondingly arranged with low-temperature region.

Illustratively, the sidewall thickness of the thick wall area is greater than the sidewall thickness of the thin-wall regions.Implement at one In example, the thickness difference range of the thick wall area and the thin-wall regions is 2mm to 10mm.

Illustratively, thin-wall regions arrangement corresponding with high-temperature area；Thick wall area cloth corresponding with low-temperature region It sets.Wherein, the high-temperature area includes the heating region of the heater or the heater, the heating zone of the heater Domain includes the electrode being powered；The low-temperature region includes the unheated zone at the interval or the heater between the heater Domain, the non-heated region of the heater include cold electrode.

In one embodiment, multiple heaters 6 are provided with, the corresponding region of each heater 6 is high-temperature area, heating Interval region between device 6 is low-temperature region.In another embodiment, it is provided with a heater 6, wherein the heating being powered Region is high-temperature area, and cold non-heated region is low-temperature region.

Illustratively, the outer wall of the soaking sleeve 9 and the spacing of the heater are equal everywhere；The thick wall area The distance between inner wall and the crucible 5 are less than the distance between the inner wall of the thin-wall regions and described crucible 5.

In one embodiment, as shown in Fig. 2, the cross section of the heater 6 and the crucible 5 is circular ring shape, because This, the cross section of the outer wall of the soaking sleeve 9 is also round, and heater 6 is overlapped with the center of circle of soaking sleeve 9, to realize The outer wall of the soaking sleeve 9 and the spacing of the heater 6 are equal everywhere.However, since the soaking sleeve 9 includes heavy wall Region and the thin-wall regions, the sidewall thickness of the thick wall area is greater than the sidewall thickness of the thin-wall regions, therefore, described The cross section of the inner wall of soaking sleeve 9 is the irregular shape of similar gear, and wherein the inner wall of thick wall area is apart from the crucible 5 It is relatively close, and the inner wall of thin-wall regions apart from the crucible 5 farther out.

Due to thick wall area it is corresponding with low-temperature region arrangement, received heat radiation is less, but the inner wall of thick wall area with The distance between crucible 5 is smaller, and radiation shapes coefficient is larger；Thin-wall regions are corresponding to high-temperature area to be arranged, and received hot spoke Penetrate more, but the distance between the inner wall of thin-wall regions and crucible 5 are larger, and radiation shapes coefficient is smaller；Therefore, thick by increasing The radiation shapes coefficient of wall region, influence that can be relatively low with equilibrium temperature make crucible in rotation from the equal hot jacket of heater The heat of 9 radiation of cylinder is as identical as possible.

By the thermal cycling stresses of reduction crucible 5, the service life of crucible 5 is extended, specifically, the use of graphite crucible Number extends to 60 times or more from 30 times.In addition, making crystal growth work by reducing the temperature change on 5 circumferencial direction of crucible Skill is more reliable and more stable.

Illustratively, the soaking sleeve is divided into multiple thick wall areas and multiple thin-wall regions, the thickness Wall region is arranged alternately with the thin-wall regions.

In one embodiment, the quantity of the thick wall area and the quantity of the thin-wall regions depend on heater 6 The quantity of heating region in quantity or heater 6, as shown in Fig. 2, heater 6 has two heating regions being oppositely arranged, Two thin-wall regions are then correspondingly designed, two heavy walls are then correspondingly designed in and the non-heated region between two heating regions Region, therefore, what thick wall area was always alternately present with the thin-wall regions.In addition, the length of each in multiple thick wall areas Degree can be identical or different, and the length of each in multiple thin-wall regions can be identical or different, one of thick wall area and thin-walled The length in one of region can be identical or different.Preferably, soaking sleeve 9 is divided into multiple thickness areas and multiple tenuities The length of domain, i.e., each thick wall area and each thin-wall regions is all the same.

Illustratively, the soaking sleeve 9 is overall construction or is formed by multiple Split assembleds.In one embodiment In, the soaking sleeve 9 uses integrated design, straight forming.In another embodiment, the soaking sleeve 9 is by multiple Thick wall area and multiple thin-wall regions splice and combine.

Illustratively, the constituent material of the soaking sleeve 9 includes heat preserving and insulating material.In one embodiment, described The constituent material of soaking sleeve 9 is high purity graphite.In another embodiment, the constituent material of soaking sleeve 9 is that carbon/carbon is compound Material, carbon/carbon compound material are the carbon-based composite materials enhanced using carbon fiber and its fabric, have low-density, high intensity, It is excellent that high ratio modulus, high-termal conductivity, low-expansion coefficient, frictional behaviour are good and thermal shock resistance is good, dimensional stability is high etc. Point.

As shown in Figure 1, soaking sleeve 9 is connected by fixed structure with heat insulation structural 8, soaking sleeve 9 is fixed on earthenware Around crucible 5.

The crystal growing apparatus provided according to the present invention, by being set between heater and crucible, the equal hot jacket The side wall of cylinder includes thick wall area and thin-wall regions, using the different adjustment radiation shapes coefficient of wall thickness, the influence of equilibrium temperature, The heat for radiating crucible in rotation from crystal growing apparatus is as identical as possible.

The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only intended to The purpose of citing and explanation, is not intended to limit the invention to the scope of the described embodiments.Furthermore those skilled in the art It is understood that the present invention is not limited to the above embodiments, introduction according to the present invention can also be made more kinds of member Variants and modifications, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention by The appended claims and its equivalent scope are defined.