阅读说明：本技术 一种单晶硅生长装置及单晶硅生长方法 (A kind of monocrystalline silicon growing device and monocrystalline silicon growing method ) 是由 王志辉 于 2019-09-17 设计创作，主要内容包括：本发明公开了一种单晶硅生长装置,包括炉体,所述炉体内的相对侧壁上均固定有上固定块和下固定块,所述炉体内的底部固定有炉底护盘,所述炉底护盘的上端固定有石墨碳毡,且石墨碳毡位于下固定块的下端,所述上固定块的下端固定有上保温罩,所述下固定块的上端固定有下保温罩,所述上保温罩和下保温罩之间共同固定有中保温罩；本发明还提出了一种单晶硅生长方法。本发明通过L型夹持板、坩埚托盘和连接块之间的配合,实现了能对不同大小的坩埚进行夹持的功能,提高了坩埚加热时的稳定性,保证了单晶硅的生长速度和质量,节约了时间,适用范围广,同时还简化了单晶硅的生长方法,操作简单,大大减少了晶体的缺陷。(The invention discloses a kind of monocrystalline silicon growing devices, including furnace body, fixed block and lower fixed block are respectively and fixedly provided in the intracorporal opposing sidewalls of furnace, the intracorporal bottom of furnace is fixed with furnace bottom protection plate, the upper end of the furnace bottom protection plate is fixed with graphite carbon felt, and graphite carbon felt is located at the lower end of lower fixed block, and the lower end of the upper fixing block is fixed with insulation cover, the upper end of the lower fixed block is fixed with lower insulation cover, is fixed with middle insulation cover jointly between the upper insulation cover and lower insulation cover；The invention also provides a kind of monocrystalline silicon growing methods.The present invention passes through the cooperation between L-type grip block, crucible pallet and link block, realize the function that can be clamped to different size of crucible, improve stability when crucible heating, it ensure that the speed of growth and quality of monocrystalline silicon, it has saved the time, it is applied widely, while also simplifying the growing method of monocrystalline silicon, it is easy to operate, greatly reduce the defect of crystal.)

1. a kind of monocrystalline silicon growing device, including furnace body (3), it is characterised in that: solid in the opposing sidewalls in the furnace body (3) Surely there are upper fixed block (2) and lower fixed block (14), the bottom in the furnace body (3) is fixed with furnace bottom protection plate (9), the furnace bottom shield The upper end of disk (9) is fixed with graphite carbon felt (13), and graphite carbon felt (13) is located at the lower end of lower fixed block (14), fixed The lower end of block (2) is fixed with insulation cover (20), and the upper end of the lower fixed block (14) is fixed with lower insulation cover (7), it is described on It is fixed with jointly between insulation cover (20) and lower insulation cover (7) middle insulation cover (4), the opposite side of two upper fixed block (2) is equal It is fixed with guide shell (1), the middle part of the furnace body (3), graphite carbon felt (13) and furnace bottom protection plate (9) is run through jointly and is fixed with support Bar sheath (17), the pressure pin sheath (17) is interior, and through pressure pin (10) are equipped with, the upper end of the pressure pin (10) is equipped with support device, The support device is equipped with graphite crucible (18), is placed with silica crucible (19), the quartz in the graphite crucible (18) The upper end of crucible (19) extends to the upper end of graphite crucible (18), and the lower end of two guide shells (1) all extends to silica crucible (19) in, heating device is equipped in the furnace body (3), the heating device and silica crucible (19) are corresponding.

2. a kind of monocrystalline silicon growing device according to claim 1, it is characterised in that: the support device includes being fixed on The upper end of the supporting block (27) of pressure pin (10) upper end, the supporting block (27) is fixed with crucible pallet (8), the crucible pallet (8) wherein two sides are respectively and fixedly provided with link block (16), and the one of the other two sides of the crucible pallet (8) and two link blocks (16) Side is equipped with slot (6), is run through in the slot (6) and is equipped with L-type grip block (21), on one end side wall in the slot (6) Equidistant to be equipped with more than two through-holes (15), the side of the L-type grip block (21) is equidistantly equipped with more than two and through-hole (15) corresponding tapped blind hole (25) is equipped with screw (26) wherein running through in four through-holes (15), and the one of the screw (26) End extends in corresponding tapped blind hole (25), and the side of the L-type grip block (21) is respectively and fixedly provided with grip block (28), four folders The side for holding block (28) contradicts on one week side wall of graphite crucible (18).

3. a kind of monocrystalline silicon growing device according to claim 1, it is characterised in that: the heating device includes passing through jointly Wear and be fixed on the electrode sheath (11) in furnace body (3), graphite carbon felt (13) and furnace bottom protection plate (9), the electrode sheath (11) It is fixed with quartz ring (22) on one week interior side wall, through equipped with electrode (12), the electrode (12) in the quartz ring (22) Upper end be fixed with L-type heater (5) by electrode bolts (23), two L-type heaters (5) are located at silica crucible (19) Two sides.

4. a kind of monocrystalline silicon growing device according to claim 1, it is characterised in that: the upper insulation cover (20), middle guarantor Temperature cover (4) and lower insulation cover (7) are all made of Carbon fibe laminated cloth and are made with thin carbon fiber network tire.

5. a kind of monocrystalline silicon growing device according to claim 2, it is characterised in that: the supporting block (27) and crucible tray Disk (8) is integrally formed.

6. a kind of monocrystalline silicon growing device according to claim 2, it is characterised in that: the quantity of the tapped blind hole (25) It is 5-8.

7. a kind of monocrystalline silicon growing method, which comprises the following steps:

S1, suitable polycrystal material and mixtures of impurities are got out；

S2, polycrystal material mixture is poured by guide shell (1) into silica crucible (19)；

S3, silica crucible (19) is heated using L-type heater (5), melts polycrystal material all；

S4, by seed crystal put down it is toasted after, be brought into contact with melt, seed crystal lifts upwards, control temperature tie melt on seed crystal It is brilliant；

S5, monocrystalline keep cylinder to start to grow, until growing up to required diameter dimension；

S6, single crystal diameter is gradually reduced, is allowed to last tapered；

After S7, temperature cool down, monocrystalline after molding is taken out out of furnace body (3).

Technical field

The present invention relates to single silicon field more particularly to a kind of monocrystalline silicon growing device and monocrystalline silicon growing methods.

Background technique

Monocrystalline silicon is a kind of nonmetalloid that comparison is active, is the important component of crystalline material, is in new material The forward position of development.Its main application is used as semiconductor material and utilizes solar energy power generating, heat supply etc..Since solar energy has The many advantages such as have cleaning, environmental protection, facilitate, in the late three decades, solar utilization technique research and develop, commercially produce, city Developing aspect all obtains tremendous development, become the world quickly, one of the new industry of stable development.

Since the accessibility of silicon materials, solar-grade high-purity silicon production method are more mature, silicon crystal class (monocrystalline silicon, Polysilicon) the solar battery clean energy resource important as one kind, it has been widely used.This kind of battery of in the 21st century, The jumbo growth of usage amount.

Currently, need to heat polycrystalline silicon raw material using crucible when obtaining silicon using monocrystalline silicon growing device, but It is that existing monocrystalline silicon growing device is largely fixed, when using different size of crucible, it can not be carried out surely Surely it grips, to influence the speed of growth and quality of monocrystalline silicon, and existing monocrystalline silicon growing method is relatively complicated, grasps Make complexity, for this purpose, we have proposed a kind of monocrystalline silicon growing devices and growing method to solve the above problems.

Summary of the invention

The purpose of the present invention is to solve disadvantages existing in the prior art, and a kind of monocrystalline silicon growing device proposed And monocrystalline silicon growing method.

To achieve the goals above, present invention employs following technical solutions:

A kind of monocrystalline silicon growing device, including furnace body are respectively and fixedly provided with fixed block and lower solid in the intracorporal opposing sidewalls of furnace Determine block, the intracorporal bottom of furnace is fixed with furnace bottom protection plate, and the upper end of the furnace bottom protection plate is fixed with graphite carbon felt, and graphitic carbon Felt is located at the lower end of lower fixed block, and the lower end of the upper fixing block is fixed with insulation cover, and the upper end of the lower fixed block is fixed There is lower insulation cover, is fixed with middle insulation cover between the upper insulation cover and lower insulation cover jointly, opposite the one of fixed block on two Side is respectively and fixedly provided with guide shell, and pressure pin sheath, institute are run through jointly and be fixed in the middle part of the furnace body, graphite carbon felt and furnace bottom protection plate It states through pressure pin is equipped in pressure pin sheath, the upper end of the pressure pin is equipped with support device, and the support device is equipped with graphite earthenware Crucible is placed with silica crucible in the graphite crucible, and the upper end of the silica crucible extends to the upper end of graphite crucible, and two are led The lower end of flow cartridge all extends in silica crucible, and heating device, the heating device and silica crucible phase are equipped in the furnace body It is corresponding.

Preferably, the support device includes being fixed on the supporting block of pressure pin upper end, and the upper end of the supporting block is fixed with Crucible pallet, the wherein two sides of the crucible pallet are respectively and fixedly provided with link block, the other two sides of the crucible pallet and two companies The side for connecing block is equipped with slot, runs through in the slot and is equipped with L-type grip block, the spacing such as on one end side wall in the slot Equipped with more than two through-holes, the side of the L-type grip block is equidistantly equipped with more than two tapped blind holes corresponding with through-hole, In in four through-holes through screw is equipped with, one end of the screw extends in corresponding tapped blind hole, the L-type grip block Side be respectively and fixedly provided with grip block, the side of four grip blocks contradicts on one week side wall of graphite crucible.

Preferably, the heating device includes the electricity for running through jointly and being fixed in furnace body, graphite carbon felt and furnace bottom protection plate Pole sheath, is fixed with quartz ring on one week side wall in the electrode sheath, through being equipped with electrode, the electricity in the quartz ring The upper end of pole is fixed with L-type heater by electrode bolts, and two L-type heaters are located at the two sides of silica crucible.

Preferably, the upper insulation cover, middle insulation cover and lower insulation cover are all made of Carbon fibe laminated cloth and thin carbon fiber network Tire is made.

Preferably, the supporting block and crucible pallet are integrally formed.

Preferably, the quantity of the tapped blind hole is 5-8.

The invention also provides a kind of monocrystalline silicon growing methods, comprising the following steps:

S1, suitable polycrystal material and mixtures of impurities are got out；

S2, polycrystal material mixture is poured by guide shell into silica crucible；

S3, silica crucible is heated using L-type heater, melts polycrystal material all；

S4, by seed crystal put down it is toasted after, be brought into contact with melt, seed crystal lifts upwards, control temperature tie melt on seed crystal It is brilliant；

S5, monocrystalline keep cylinder to start to grow, until growing up to required diameter dimension；

S6, single crystal diameter is gradually reduced, is allowed to last tapered；

After S7, temperature cool down, monocrystalline after molding is taken out out of furnace body.

In the present invention, suitable polycrystal material mixture is first got out, polycrystalline silicon raw material and impurity are then passed through into water conservancy diversion Cylinder is fallen in silica crucible, and for the type of impurity depending on the N of resistance or p-type, dopant species have boron, phosphorus, antimony, arsenic, the at present country Only boron-doping forms P-type semiconductor to solar energy industry, adds polycrystalline silicon raw material after in silica crucible, furnace body must shut off and be pumped into It is filled with high-purity argon gas after vacuum to be allowed to maintain within the scope of certain pressure, then opens heating power supply, using L-type heater by temperature Fusion temperature (1420 DEG C) or more are heated to, polycrystalline silicon raw material is melted, after the temperature of silicon melt is stablized, slowly by seed crystal When immersing seeding growth in silicon melt seed crystal is quickly proposed into length upwards, the diameter of the seed crystal grown is made to narrow down to a certain size (4- 6mm), since dislocation line and growth axis are at an angle of cut, as long as necking down is enough long, plane of crystal just can be discharged in dislocation, generate low level Wrong crystal after having grown thin neck, must reduce temperature and pulling rate, so that the diameter of crystal increases to required size gradually, it is long After complete thin neck and shoulder, by the continuous adjustment of pulling rate and temperature, boule diameter can be made to maintain between positive and negative 2mm, this section The fixed part of diameter is known as equal-diameter part, and monocrystalline silicon piece is taken from equal-diameter part, after having grown equal-diameter part, if Crystal bar and liquid level are separated at once, then thermal stress will be so that dislocation and skid wire occurs in crystal bar, then for avoiding this problem Generation, it is necessary to the diameter of crystal bar is slowly reduced, is separated until at a cusp with liquid level, to obtain finished product, then to After temperature lowers, finished product is taken out out of furnace body, the present invention passes through between L-type grip block, crucible pallet and link block Cooperation, realizes the function that can be clamped to different size of crucible, improves stability when crucible heating, ensure that list The speed of growth and quality of crystal silicon, have been saved the time, applied widely, while also simplifying the growing method of monocrystalline silicon, operation Simply, the defect of crystal is greatly reduced.

Detailed description of the invention

Fig. 1 is a kind of structural schematic diagram of monocrystalline silicon growing device proposed by the present invention；

Fig. 2 is a kind of structural schematic diagram of monocrystalline silicon growing device crucible pallet proposed by the present invention；

Fig. 3 is enlarged drawing at a kind of A of monocrystalline silicon growing device proposed by the present invention；

Fig. 4 is enlarged drawing at a kind of B of monocrystalline silicon growing device proposed by the present invention；

Fig. 5 is a kind of flow chart of monocrystalline silicon growing method proposed by the present invention.

In figure: 1 guide shell, fixed block on 2,3 furnace bodies, insulation cover, 5 L-type heaters, 6 slots, 7 lower insulation covers, 8 in 4 Crucible pallet, 9 furnace bottom protection plates, 10 pressure pins, 11 electrode sheaths, 12 electrodes, 13 graphite carbon felts, 14 lower fixed blocks, 15 through-holes, 16 connect Connect block, 17 pressure pin sheaths, 18 graphite crucibles, 19 silica crucibles, insulation cover, 21 L-type grip blocks, 22 quartz rings, 23 electrodes on 20 Bolt, 24 L-type support plates, 25 tapped blind holes, 26 screws, 27 supporting blocks, 28 grip blocks.

Specific embodiment

Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.

Referring to Fig.1-4, a kind of monocrystalline silicon growing device, including furnace body 3, it is convenient that polycrystal material and mixtures of impurities are added Heat is respectively and fixedly provided with fixed block 2 and lower fixed block 14 in the opposing sidewalls in furnace body 3, plays the role of being connected and fixed, furnace body 3 Interior bottom is fixed with furnace bottom protection plate 9, and convenient to protect to the bottom of furnace body 3, the upper end of furnace bottom protection plate 9 is fixed with graphitic carbon Felt 13, and graphite carbon felt 13 is located at the lower end of lower fixed block 14, graphite carbon felt 13 is big with strength, oxidation resistance is strong, heat preservation The good feature of performance.

In the present invention, the lower end of upper fixed block 2 is fixed with insulation cover 20, and the upper end of lower fixed block 14 is fixed with lower guarantor Temperature cover 7, is fixed with middle insulation cover 4 jointly, plays the role of insulation between upper insulation cover 20 and lower insulation cover 7, on two The opposite side of fixed block 2 is respectively and fixedly provided with guide shell 1, falls into silica crucible 19 convenient for polycrystalline silicon material.

In the present invention, the middle part of furnace body 3, graphite carbon felt 13 and furnace bottom protection plate 9 is run through jointly and is fixed with pressure pin sheath 17, pressure pin sheath 17 is interior through pressure pin 10 is equipped with, and protects using pressure pin sheath 17 is convenient to pressure pin 10, the upper end of pressure pin 10 Equipped with support device, support device is equipped with graphite crucible 18, is placed with silica crucible 19, silica crucible 19 in graphite crucible 18 Upper end extend to the upper end of graphite crucible 18, it is convenient that stable holding is carried out to graphite crucible 18 under the action of support device It is fixed, improve the stability of graphite crucible 18.

In the present invention, the lower end of two guide shells 1 all extends in silica crucible 19, falls convenient for polycrystal material, furnace body 3 Interior to be equipped with heating device, heating device and silica crucible 19 are corresponding, and upper insulation cover 20, middle insulation cover 4 and lower insulation cover 7 are adopted It is made of Carbon fibe laminated cloth and thin carbon fiber network tire, supporting block 27 and crucible pallet 8 are integrally formed, in the work of heating device It is convenient that heating fusing is carried out to the polycrystal material in silica crucible 19 under.

In the present invention, support device includes being fixed on the supporting block 27 of 10 upper end of pressure pin, plays the role of stablizing support, branch The upper end of bracer 27 is fixed with crucible pallet 8, and convenient to be supported to graphite crucible 18, the wherein two sides of crucible pallet 8 are solid Surely there is a link block 16, the side of the other two sides of crucible pallet 8 and two link blocks 16 is equipped with slot 6, through setting in slot 6 There is L-type grip block 21, graphite crucible 18 is gripped using L-type grip block 21 is convenient.

In the present invention, spacing are equipped with more than two through-holes 15 on one end side wall in slot 6 etc., L-type grip block 21 Side is equidistantly equipped with the more than two and corresponding tapped blind hole 25 of through-hole 15, and the quantity of tapped blind hole 25 is 5-8, wherein four Through screw 26 is equipped in a through-hole 15, one end of screw 26 is extended in corresponding tapped blind hole 25, L-type grip block 21 Side is respectively and fixedly provided with grip block 28, and the side of four grip blocks 28 contradicts on one week side wall of graphite crucible 18, it is convenient into Row stable holding facilitates the big minor adjustment L-type grip block 21 according to crucible by the cooperation between slot 6 and L-type grip block 21 Position, it is applied widely in order to be gripped to different size of crucible.

In the present invention, heating device includes running through jointly and being fixed in furnace body 3, graphite carbon felt 13 and furnace bottom protection plate 9 Electrode sheath 11, be fixed with quartz ring 22 on one week side wall in electrode sheath 11, be convenient for guard electrode 12, in quartz ring 22 Through electrode 12 is equipped with, the upper end of electrode 12 is fixed with L-type heater 5 by electrode bolts 23, and two L-type heaters 5 are distinguished Positioned at the two sides of silica crucible 19, L-type heater 5 is heated using electrode 12 is convenient.

Referring to Fig. 5, a kind of monocrystalline silicon growing method, comprising the following steps:

S1, suitable polycrystal material and mixtures of impurities are got out；

S2, polycrystal material mixture is poured into silica crucible 19 by guide shell 1, the type of impurity according to the N or p-type of resistance and Fixed, dopant species have boron, phosphorus, antimony, arsenic, current domestic solar energy industry, and only boron-doping forms P-type semiconductor；

S3, furnace body 3 must shut off and are filled with high-purity argon gas after being evacuated and be allowed to maintain within the scope of certain pressure, then opens and adds Thermoelectric generator heats silica crucible 19 using L-type heater 5, is heated to fusion temperature (1420 DEG C) or more, makes polycrystal material All fusings；

S4, by seed crystal put down it is toasted after, be brought into contact with melt, seed crystal lifts upwards, narrows down to the diameter of the seed crystal grown A certain size (4-6mm), since dislocation line and growth axis are at an angle of cut, as long as necking down is enough long, crystal table just can be discharged in dislocation Face, generates the crystal of low dislocation, and control temperature crystallizes melt on seed crystal；

S5, monocrystalline keep cylinder to start to grow, until grow up to required diameter dimension, by the continuous of pulling rate and temperature Adjustment, can be such that boule diameter maintains between positive and negative 2mm, and the fixed part of this section of diameter is known as equal-diameter part, monocrystalline silicon piece It is taken from equal-diameter part；

S6, single crystal diameter is gradually reduced, is allowed to last tapered, avoids thermal stress that crystal bar is made dislocation and skid wire occur；

After S7, temperature cool down, monocrystalline after molding is taken out out of furnace body 3.

In the present invention, then polycrystalline silicon raw material and impurity are passed through guide shell 1 by the first polycrystal material mixture for the amount of being ready to It falls in silica crucible 19, for the type of impurity depending on the N of resistance or p-type, dopant species have boron, phosphorus, antimony, arsenic, the at present country Only boron-doping forms P-type semiconductor to solar energy industry, adds polycrystalline silicon raw material after in silica crucible 19, furnace body 3 must shut off simultaneously It is filled with high-purity argon gas after being evacuated to be allowed to maintain within the scope of certain pressure, then opens heating power supply, utilizes L-type heater 5 Temperature is heated to fusion temperature (1420 DEG C) or more, polycrystalline silicon raw material is melted, after the temperature of silicon melt is stablized, by seed Seed crystal is quickly proposed length by brilliant slowly immerse when seeding is grown in silicon melt upwards, narrows down to the diameter of the seed crystal grown certain big Small (4-6mm), since dislocation line and growth axis are at an angle of cut, as long as necking down is enough long, plane of crystal just can be discharged in dislocation, generated The crystal of low dislocation after having grown thin neck, must reduce temperature and pulling rate so that the diameter of crystal increase to gradually it is required big It is small, after having grown thin neck and shoulder, by the continuous adjustment of pulling rate and temperature, boule diameter can be made to maintain between positive and negative 2mm, The fixed part of this section of diameter is known as equal-diameter part, and monocrystalline silicon piece is taken from equal-diameter part, after having grown equal-diameter part, If at once separated crystal bar and liquid level, thermal stress will be so that there is dislocation and skid wire in crystal bar, then for avoiding this The generation of problem, it is necessary to the diameter of crystal bar slowly be reduced, separated until at a cusp with liquid level, to obtain finished product, so After lowering afterwards to temperature, finished product is taken out out of furnace body 3.

The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto, Anyone skilled in the art in the technical scope disclosed by the present invention, according to the technique and scheme of the present invention and its Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.