阅读说明：本技术 快闪存储器的编程电路、编程方法及快闪存储器 (Flash memory programming circuit and method and flash memory ) 是由 王井舟 倪红松 王明 王腾锋 宁丹 于 2017-12-15 设计创作，主要内容包括：本发明涉及一种快闪存储器的编程电路及编程方法,该编程电路包括串联的编程晶体管和存储单元,所述编程晶体管的栅极接字线,存储单元的栅极连接控制栅,所述编程晶体管的一端与位线相连,另一端与所述存储单元的一端相连,存储单元的另一端与源线相连。通过本发明编程电路和方法对快闪存储器进行编程,可以在不增加沟道电流的情况下,提高后段编程的效率,从而提高整个编程过程的效率,缩短总的编程时间,提高闪存性能。(The invention relates to a programming circuit and a programming method of a flash memory, the programming circuit comprises a programming transistor and a memory cell which are connected in series, the grid electrode of the programming transistor is connected with a word line, the grid electrode of the memory cell is connected with a control grid, one end of the programming transistor is connected with a bit line, the other end of the programming transistor is connected with one end of the memory cell, and the other end of the memory cell is connected with a source line. The programming circuit and the method of the invention can improve the efficiency of back-end programming without increasing channel current, thereby improving the efficiency of the whole programming process, shortening the total programming time and improving the performance of the flash memory.)