阅读说明：本技术 驱动背板及其制备方法、显示面板、显示装置 (Driving backboard, manufacturing method thereof, display panel and display device ) 是由 杨维 王珂 狄沐昕 于 2020-01-22 设计创作，主要内容包括：一种驱动背板及其制备方法、显示面板、显示装置,目的是改善TPV驱动背板结构,提高TPV驱动背板良率。驱动背板包括:柔性衬底(1),设有第一过孔(11)；第一钝化层(21),位于柔性衬底(1)一侧,设有第二过孔(211),第二过孔(211)的正投影与第一过孔(11)的正投影至少部分重叠；薄膜晶体管(3),位于柔性衬底(1)背离第一钝化层(21)的一侧；电连接结构,包括信号走线和连接端子(41)；连接端子(41)位于柔性衬底(1)靠近第一钝化层(21)的一侧,包括位于柔性衬底(1)和第一钝化层(21)之间的第一部分(411)以及位于第二过孔(211)内的第二部分(412),且第二过孔(211)的正投影位于连接端子(41)的正投影内；信号走线位于柔性衬底(1)背离第一钝化层(21)的一侧,与薄膜晶体管(3)电连接、且通过第一过孔(11)与连接端子(41)电连接。(A driving backboard, a manufacturing method thereof, a display panel and a display device aim to improve the structure of a TPV driving backboard and improve the yield of the TPV driving backboard. The driving back plate comprises a flexible substrate (1) provided with a first via hole (11); the first passivation layer (21) is positioned on one side of the flexible substrate (1) and is provided with a second through hole (211), and the orthographic projection of the second through hole (211) is at least partially overlapped with the orthographic projection of the first through hole (11); a thin film transistor (3) located on a side of the flexible substrate (1) facing away from the first passivation layer (21); an electrical connection structure including signal traces and connection terminals (41); the connecting terminal (41) is positioned on one side of the flexible substrate (1) close to the first passivation layer (21), and comprises a first part (411) positioned between the flexible substrate (1) and the first passivation layer (21) and a second part (412) positioned in the second through hole (211), and the orthographic projection of the second through hole (211) is positioned in the orthographic projection of the connecting terminal (41); the signal routing is located on one side, away from the first passivation layer (21), of the flexible substrate (1), is electrically connected with the thin film transistor (3) and is electrically connected with the connecting terminal (41) through the first through hole (11).)

A driving back plate comprising:

the flexible substrate is provided with a first via hole;

a first passivation layer on one side of the flexible substrate; a second through hole is formed in the first passivation layer, and the orthographic projection of the second through hole on the flexible substrate is at least partially overlapped with the orthographic projection of the first through hole on the flexible substrate;

the thin film transistor is positioned on one side of the flexible substrate, which is far away from the first passivation layer;

the electric connection structure comprises signal wires and connection terminals; the connecting terminal is positioned on one side of the flexible substrate close to the first passivation layer and comprises a first part positioned between the flexible substrate and the first passivation layer and a second part positioned in the second through hole, and the orthographic projection of the second through hole on the flexible substrate is positioned in the orthographic projection of the connecting terminal on the flexible substrate; the signal routing is located on one side, away from the first passivation layer, of the flexible substrate, is electrically connected with the thin film transistor and is electrically connected with the connecting terminal through the first through hole.

The driving backplate of claim 1, wherein an orthographic projection of the first via on the flexible substrate is within an orthographic projection of the second via on the flexible substrate.

The drive back plate of claim 1, further comprising:

and the conductive structure is positioned on one side of the connecting terminal, which deviates from the flexible substrate, and is electrically connected with the connecting terminal.

The drive back plate of claim 3, further comprising:

and the integrated circuit chip is positioned on one side of the first passivation layer, which is far away from the flexible substrate, and is bound and connected with the conductive structure.

The driving backplane of claim 3, wherein the conductive structure is located on a side of the first passivation layer facing away from the flexible substrate, an orthographic projection of the connection terminal on the flexible substrate being within an orthographic projection of the conductive structure on the flexible substrate.

The driving backplate of any one of claims 3-5, wherein the conductive structure is a corrosion resistant conductive material.

The driving back plate of claim 6, wherein the material of the conductive structure comprises ITO, IZO, Mo, MoNb, Ti.

The driving back plate of any one of claims 1-5, wherein the first passivation layer is a SiOx and SiNx stack; the SiNx layer is close to the flexible substrate, and the SiOx layer is far away from the flexible substrate.

The driving backplane of any of claims 1 to 5, further comprising a second passivation layer located between the flexible substrate and the connection terminals, the second passivation layer being provided with a third via, the third via being stacked with the first via, the signal trace being electrically connected to the connection terminals through the first and third vias;

the size of the third via hole facing the opening on one side of the connecting terminal is smaller than the size of the connecting terminal facing the surface on one side of the third via hole.

A preparation method of a driving back plate comprises the following steps:

forming a first passivation layer, and forming a second via hole in the first passivation layer;

preparing an electric connection structure, a flexible substrate and a thin film transistor on the first passivation layer, and forming a first via hole in the flexible substrate, wherein the orthographic projection of the first via hole on the flexible substrate is at least partially overlapped with the orthographic projection of the second via hole on the flexible substrate; the electric connection structure comprises signal wires and connecting terminals, the connecting terminals are positioned on one side of the flexible substrate close to the first passivation layer and comprise first parts positioned between the flexible substrate and the first passivation layer and second parts positioned in the second through holes, and the orthographic projection of the second through holes on the flexible substrate is positioned in the orthographic projection of the connecting terminals on the flexible substrate; the signal routing is located on one side, away from the first passivation layer, of the flexible substrate, is electrically connected with the thin film transistor and is electrically connected with the connecting terminal through the first through hole.

The production method according to claim 10, wherein,

before the forming of the first passivation layer, the method further comprises:

providing a rigid substrate;

forming a sacrificial layer on the rigid substrate;

the forming of the first passivation layer specifically includes:

forming a first passivation layer on the sacrificial layer;

after the electrical connection structure, the flexible substrate and the thin film transistor are prepared on the first passivation layer, the method further comprises the following steps:

the sacrificial layer is sacrificed to peel off the rigid substrate.

The method of manufacturing according to claim 11, wherein after the peeling the rigid substrate, further comprising:

and binding an integrated circuit chip on one side of the first passivation layer, which is far away from the flexible substrate, wherein the integrated circuit chip is electrically connected with the connecting terminal through the second through hole.

The manufacturing method according to claim 11, wherein the manufacturing of the electrical connection structure, the flexible substrate and the thin film transistor on the first passivation layer specifically comprises:

preparing a connection terminal on the first passivation layer;

preparing a flexible substrate on the connection terminal;

and preparing signal wiring and a thin film transistor on the flexible substrate.

The manufacturing method according to claim 13, wherein the manufacturing of the connection terminal on the first passivation layer specifically comprises:

and preparing a Ti/Al/Ti laminated structure on the first passivation layer, and forming a pattern of the connecting terminal by adopting a dry etching process.

The production method according to any one of claims 11 to 14,

before the forming of the first passivation layer, the method further comprises:

preparing a conductive material layer on the sacrificial layer, and forming a pattern of a conductive structure through a composition process;

the forming of the first passivation layer specifically includes:

and depositing a passivation material layer, and forming the second via hole on the passivation material layer by adopting a dry etching process, wherein the orthographic projection of the second via hole on the flexible substrate is positioned in the orthographic projection of the conductive structure on the flexible substrate.

The preparation method according to any one of claims 11 to 14, wherein the forming of the first passivation layer specifically comprises:

depositing a passivation material layer, wherein the passivation material layer comprises one or more of SiN, SiON and SiOx;

and carrying out wet etching on the passivation material layer by adopting HF etching liquid to form the second through hole.

A display device comprising a driving backplane according to any one of claims 1 to 9 and a display element.