Semiconductor memory device and method of operating semiconductor memory device

文档序号：70719 发布日期：2021-10-01 浏览：28次中文

阅读说明：本技术 半导体存储器设备和操作半导体存储器设备的方法 (Semiconductor memory device and method of operating semiconductor memory device ) 是由金在雄于 2020-09-23 设计创作，主要内容包括：本技术涉及一种半导体存储器设备和操作半导体存储器设备的方法。半导体存储器设备包括：存储器单元阵列,存储器单元阵列包括多个存储器块,多个存储器块被指定为多个正常块、多个第一替换块、多个第二替换块、第一CAM块以及第二CAM块；外围电路,外围电路被配置为对多个存储器块执行擦除操作和编程操作；以及控制逻辑,控制逻辑被配置为：在对正常存储器块之中的所选择的目标块进行的编程操作期间,控制外围电路对目标块执行生长坏块检查操作。(The present technology relates to a semiconductor memory device and a method of operating the semiconductor memory device. The semiconductor memory device includes: a memory cell array including a plurality of memory blocks designated as a plurality of normal blocks, a plurality of first replacement blocks, a plurality of second replacement blocks, a first CAM block, and a second CAM block; peripheral circuitry configured to perform erase operations and program operations on a plurality of memory blocks; and control logic configured to: during a program operation on a selected target block among the normal memory blocks, the peripheral circuit is controlled to perform a grown-bad-block checking operation on the target block.)

1. A semiconductor memory device, comprising:

a memory cell array including a plurality of memory blocks designated as a plurality of normal blocks, a plurality of first replacement blocks, a plurality of second replacement blocks, a first Content Addressable Memory (CAM) block, and a second CAM block;

peripheral circuitry configured to perform erase operations and program operations on the plurality of memory blocks; and

control logic configured to control the peripheral circuitry to perform a grown bad block check operation on a target block during the program operation on the selected target block among the normal memory blocks.

2. The semiconductor memory device according to claim 1, wherein the control logic controls the peripheral circuit to perform the erase operation on the target block before the program operation is performed on the target block.

3. The semiconductor memory device of claim 2, wherein the control logic controls the peripheral circuitry to perform one of: the grown-bad block check operation immediately preceding the erase operation, and the grown-bad block check operation immediately after the erase operation is performed.

4. The semiconductor memory device according to claim 1, wherein during the grown bad block checking operation, the peripheral circuit checks threshold voltages of selection transistors included in the target block, and counts the number of selection transistors, among the selection transistors, whose threshold voltages are out of a normal range.

5. The semiconductor memory device according to claim 4, wherein when the number of the selection transistors whose threshold voltages exceed the normal range is larger than a threshold count, the control logic determines the target block as a grown bad block and selects a replacement block for replacing the target block from among the plurality of second replacement blocks.

6. The semiconductor memory device according to claim 5, wherein the control logic controls the peripheral circuit to perform the program operation on the selected replacement block.

7. The semiconductor memory device according to claim 6, wherein the control logic controls the peripheral circuit to update information on the target block and the selected replacement block in the second CAM block after the program operation on the selected replacement block is completed.

8. The semiconductor memory device according to claim 1, wherein the first replacement block is a memory block for replacing a memory block determined as an initial bad block among the normal blocks.

9. The semiconductor memory device of claim 8, wherein the initial bad block is a bad memory block detected during a test process after fabrication of the semiconductor memory device is complete.

10. The semiconductor memory device according to claim 8, wherein the first CAM block stores system data including option parameter information and information on an operating voltage and information on the initial bad block.

11. The semiconductor memory device according to claim 1, further comprising:

a word line test circuit configured to detect a defect of a local line connected to the target block during the grown-bad block inspection operation.

12. A semiconductor memory device, comprising:

a memory cell array including a plurality of normal blocks, a plurality of replacement blocks, and a CAM block;

peripheral circuitry configured to perform erase operations and program operations on the plurality of memory blocks;

word line test circuitry coupled to the plurality of memory blocks through local lines and configured to detect defects in memory blocks from the plurality of memory blocks through the local lines; and

control logic configured to control the peripheral circuitry to perform a grown bad block check operation on the target block during the programming operation on the selected target block among the normal memory blocks,

wherein the control logic controls the peripheral circuitry to perform the programming operation on the selected replacement block among the plurality of replacement blocks, but not the target block, in accordance with a result of the grown bad block check operation.

13. The semiconductor memory device according to claim 12, wherein the control logic controls the peripheral circuit to perform the erase operation on the target block during the program operation on the target block.

14. The semiconductor memory device of claim 13, wherein the control logic controls the peripheral circuitry to perform one of: the grown bad block check operation before the erase operation, and the grown bad block check operation after the erase operation is performed.

15. The semiconductor memory device according to claim 12, wherein during the grown bad block checking operation, the peripheral circuit checks threshold voltages of selection transistors included in the target block, and counts the number of selection transistors, among the selection transistors, whose threshold voltages are out of a normal range.

16. The semiconductor memory device according to claim 12, wherein during the grown-bad-block inspection operation, the word line test circuit applies a test voltage to the local line and compares a measurement voltage of the local line with a reference voltage to detect the defect of the target block.

17. A method of operating a semiconductor memory device, comprising:

receiving a command corresponding to a program operation on a target block;

performing an erase operation on the target block in response to the command;

after the erasing operation is completed, performing a growing bad block checking operation on the target block; and

when the target block is determined to be a grown-bad block due to the grown-bad block checking operation, a replacement block for replacing the target block is selected, and the programming operation is performed.

18. The method of claim 17, further comprising:

after the programming operation on the replacement block is completed, information on the target block and information on the replacement block are stored in a CAM block.

19. The method according to claim 17, wherein the grown bad block checking operation compares the number of selection transistors exceeding a normal threshold voltage range among the selection transistors included in the target block.

20. The method of claim 17, wherein the grown bad block inspection operation applies a test voltage to a local line of the target block and compares a measured voltage of the local line with a reference voltage.

Technical Field

The present disclosure relates to an electronic device, and more particularly, to a semiconductor memory device and a method of operating the semiconductor memory device.

Background

More recently, paradigms for computer environments have been transformed into pervasive computing, which enables computer systems to be used at any time and anywhere. Accordingly, the use of portable electronic devices, such as mobile phones, digital cameras, and notebook computers, is rapidly increasing. Such portable electronic devices generally use a memory system using a semiconductor memory device, i.e., a data storage device. The data storage device is used as a primary or secondary storage device for the portable electronic device.

A semiconductor data storage device using a memory device has advantages of excellent stability and durability because there is no mechanical driver, the access speed of information is very fast, and power consumption is low. As examples of memory systems having such advantages, data storage devices include Universal Serial Bus (USB) memory devices, memory cards having various interfaces, Solid State Drives (SSDs), and the like.

Memory devices are largely divided into volatile memory devices and non-volatile memory devices.

The writing speed and the reading speed of the nonvolatile memory device are relatively slow, however, the nonvolatile memory device can maintain the stored data even if the power is cut off. Thus, non-volatile memory devices are used to store data that is maintained regardless of power. The nonvolatile memory device includes: read-only memory (ROM), Mask ROM (MROM), Programmable ROM (PROM), Erasable Programmable ROM (EPROM), Electrically Erasable Programmable ROM (EEPROM), flash memory, phase change random access memory (PRAM), Magnetic RAM (MRAM), Resistive RAM (RRAM), Ferroelectric RAM (FRAM), and the like. Flash memories are divided into NOR type and NAND type.

Disclosure of Invention

A semiconductor memory device according to an embodiment of the present disclosure may include: a memory cell array including a plurality of memory blocks designated as a plurality of normal blocks, a plurality of first replacement blocks, a plurality of second replacement blocks, a first CAM block, and a second CAM block; peripheral circuitry configured to perform erase operations and program operations on a plurality of memory blocks; and control logic configured to control the peripheral circuit to perform a grown-bad-block checking operation on the target block during a program operation on a selected target block among the normal memory blocks.

A semiconductor memory device according to an embodiment of the present disclosure may include: a memory cell array including a plurality of normal blocks, a plurality of replacement blocks, and a CAM block; peripheral circuitry configured to perform erase operations and program operations on a plurality of memory blocks; a word line test circuit configured to detect a defect of a local line connected to the plurality of memory blocks; and control logic configured to control the peripheral circuitry to perform a grown bad block check operation on the target block during a programming operation on a selected target block among the normal memory blocks, and the control logic may control the peripheral circuitry to perform the programming operation on the selected replacement block among the plurality of replacement blocks instead of the target block according to a result of the grown bad block check operation.

A method of operating a semiconductor memory device according to an embodiment of the present disclosure may include: receiving a command corresponding to a program operation performed on a target block; performing an erase operation on the target block in response to the command; performing a grow bad block check operation on the target block after the erase operation is completed; and when the target block is determined to be a grown bad block due to the grown bad block checking operation, selecting a replacement block for replacing the target block and performing a programming operation.

Drawings

FIG. 1 is a block diagram depicting a memory system according to an embodiment of the disclosure.

Fig. 2 is a block diagram for describing a configuration of the semiconductor memory device of fig. 1.

FIG. 3 is a block diagram for describing a memory block included in the memory cell array of FIG. 2.

Fig. 4 is a diagram for describing the memory block of fig. 2.

FIG. 5 is a diagram to describe an embodiment of a memory block configured in three dimensions.

Fig. 6 is a block diagram for describing the control logic of fig. 2.

Fig. 7 and 8 are flowcharts for describing the operation of the semiconductor memory device according to the embodiment of the present disclosure.

Fig. 9 is a flowchart for describing a Grown Bad Block (GBB) checking operation according to an embodiment of the present disclosure.

Fig. 10 is a threshold voltage distribution diagram for describing the GBB inspection operation of fig. 9.

Fig. 11 is a flowchart for describing a GBB check operation according to another embodiment of the present disclosure.

Fig. 12 is a waveform diagram of voltages for describing the GBB check operation of fig. 11.

FIG. 13 is a diagram depicting another embodiment of a memory system.

FIG. 14 is a diagram depicting another embodiment of a memory system.

FIG. 15 is a diagram depicting another embodiment of a memory system.

FIG. 16 is a diagram depicting another embodiment of a memory system.

Detailed Description

A specific structural or functional description of embodiments according to the concepts disclosed in the present specification or application is illustrated for the purpose of describing the embodiments according to the concepts disclosed herein. Embodiments according to the disclosed concept may be implemented in various forms, and the description is not limited to the embodiments described in this specification or this application.

Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings so that those skilled in the art to which the present disclosure pertains can easily implement the technical spirit of the present disclosure.

Embodiments of the present disclosure provide a semiconductor memory device capable of detecting a grown bad block among memory blocks included in the semiconductor memory device, and a method of operating the semiconductor memory device.

According to the present technology, a programming operation may be performed by detecting a growing bad block among memory blocks included in a memory device, and replacing the detected growing bad block with a replacement block. Therefore, the stability of the memory system can be improved. Further, the grown bad block check operation and the replacement block selection operation may be performed in the semiconductor memory by themselves without receiving a command from the outside.

FIG. 1 is a block diagram depicting a memory system according to an embodiment of the disclosure.

Referring to fig. 1, a memory system 1000 includes a memory device 1100 and a controller 1200. The memory device 1100 includes a plurality of semiconductor memory devices 100. The plurality of semiconductor memory devices 100 may be divided into a plurality of groups GR1 to GRn.

In fig. 1, a plurality of groups GR1 to GRn communicate with the controller 1200 through first to nth channels CH1 to CHn, respectively. Each semiconductor memory device 100 will be described later with reference to fig. 2.

Each of the plurality of groups GR1 to GRn is configured to communicate with the controller 1200 through one common channel. The controller 1200 is configured to control the plurality of semiconductor memory devices 100 of the memory device 1100 through the plurality of channels CH1 through CHn. Each of the semiconductor memory devices 100 may include a plurality of memory blocks, perform a Grown Bad Block (GBB) check operation on a selected target block before performing a program operation, and may perform the program operation by replacing the target block with a replacement block according to a result of the GBB check operation.

When the manufacturing is completed, the semiconductor memory apparatus 100 performs a test process to check the manufacturing state, performance, reliability, and the like of the memory element. Even if the semiconductor memory device 100 passes the test process, defects or malfunctions may occur during subsequent use. Defects or failures occurring during use are referred to as grown defects or grown failures, and memory blocks in which grown defects occur are referred to as Grown Bad Blocks (GBBs). Further, after the manufacturing of the semiconductor memory device 100 is completed, the bad memory blocks detected in the above-described test process may be defined as initial bad blocks. In addition, a memory block in which a status failure occurs due to various operations (e.g., a program operation, a read operation, and an erase operation) may be defined as a bad block. In an embodiment of the present disclosure, the GBB may be detected by performing a GBB check operation on the target block before performing a program operation on the target block.

The controller 1200 is connected between the host 1400 and the memory device 1100. The controller 1200 is configured to access the memory device 1100 in response to a request from the host 1400. For example, the controller 1200 is configured to control read, write, erase, and background operations of the memory device 1100 in response to requests received from the host 1400. The controller 1200 is configured to provide an interface between the memory device 1100 and the host 1400. The controller 1200 is configured to drive firmware for controlling the memory device 1100.

The host 1400 controls the memory system 1000. The host 1400 includes portable electronic devices such as a computer, a PDA, a PMP, an MP3 player, a camera, a camcorder, and a mobile phone. The host 1400 may request a write operation, a read operation, an erase operation, etc. of the memory system 1000 through a command.

The controller 1200 and the memory device 1100 may be integrated into one semiconductor device. As an example of an embodiment, the controller 1200 and the memory device 1100 may be integrated into one semiconductor device to form a memory card. For example, the controller 1200 and the memory device 1100 may be integrated into one semiconductor device to form a memory card such as: PC card (personal computer memory card international association (PCMCIA)), compact flash Card (CF), smart media card (SM or SMC), memory stick, multimedia card (MMC, RS-MMC or MMCmicro), SD card (SD, miniSD, microSD or SDHC), and universal flash memory (UFS).

The controller 1200 and the memory device 1100 may be integrated into one semiconductor device to form a semiconductor drive (solid state drive (SSD)). A semiconductor drive (SSD) includes a storage device configured to store data in a semiconductor memory. When the memory system 1000 is used as a semiconductor drive (SSD), the operation speed of the host 1400 connected to the memory system 1000 can be significantly improved.

As another example, the memory system 1000 is provided as one of various components of an electronic device, such as a computer, an ultra mobile pc (umpc), a workstation, a netbook, a Personal Digital Assistant (PDA), a portable computer, a network tablet, a wireless phone, a mobile phone, a smart phone, an electronic book, a Portable Multimedia Player (PMP), a portable game console, a navigation device, a black box, a digital camera, a 3D television, a digital audio recorder, a digital audio player, a digital picture recorder, a digital picture player, a digital video recorder and a digital video player, a device capable of transmitting and receiving information in a wireless environment, one of various electronic devices for configuring a home network, one of various electronic devices for configuring a computer network, one of various electronic devices for configuring a telematics network, a computer, An RFID device or one of various components for configuring a computing system.

As an example of an embodiment, memory device 1100 or memory system 1000 may be mounted as various types of packages. For example, the memory device 1100 or memory system 1000 may be packaged and installed using methods such as: stack-up packages (pops), Ball Grid Arrays (BGAs), Chip Scale Packages (CSPs), Plastic Leaded Chip Carriers (PLCCs), plastic dual in-line packages (PDIPs), waffle pack (waffle) package dies, chip form dies, Chip On Board (COBs), ceramic dual in-line packages (CERDIP), plastic Metric Quad Flat Packages (MQFP), Thin Quad Flat Packages (TQFPs), Small Outline Integrated Circuits (SOICs), Shrink Small Outline Packages (SSOPs), Thin Small Outline Packages (TSOPs), System In Package (SIP), Multi Chip Packages (MCPs), wafer-level fabricated packages (WFPs), or wafer-level processed stack packages (WSPs).

Fig. 2 is a block diagram for describing a configuration of the semiconductor memory device of fig. 1.

Referring to fig. 2, the semiconductor memory apparatus 100 may include a memory cell array 10 storing data. The semiconductor memory device 100 may include a peripheral circuit 200 configured to perform a program operation for storing data in the memory cell array 10, a read operation for outputting the stored data, and an erase operation for erasing the stored data. The peripheral circuit 200 may measure a threshold voltage of a selected memory block among the memory blocks 11 included in the memory cell array 10 (i.e., the selection transistors included in the target block) during the GBB check operation, and may output the GBB check operation result as the first PASS/FAIL signal 1st PASS/FAIL based on the measured threshold voltage. The semiconductor memory device 100 may include a control logic 300, the control logic 300 controlling the peripheral circuit 200 under the control of the controller 1200 of fig. 1. The semiconductor memory device 100 may include a word line test circuit 400. The word line test circuit 400 may perform a test operation on the local line LL connected to the target block during the GBB check operation and output the test operation result as the second PASS/FAIL signal 2nd PASS/FAIL. The control logic 300 may be implemented as hardware, software, or a combination of hardware and software. For example, the control logic 300 may be control logic circuitry that operates according to an algorithm and/or a processor that executes control logic code.

The memory cell array 10 may include a plurality of memory blocks MB1 through MBk 11(k is a positive integer). Local lines LL and bit lines BL1 to BLm (m is a positive integer) may be connected to each of the memory blocks MB1 to MBk 11. For example, the local line LL may include a first selection line, a second selection line, and a plurality of word lines arranged between the first selection line and the second selection line. Further, the local line LL may include dummy lines disposed between the first selection line and the word line and disposed between the second selection line and the word line. Here, the first selection line may be a source selection line, and the second selection line may be a drain selection line. For example, the local lines LL may include word lines, drain and source select lines, and source lines SL. For example, the local line LL may further include a dummy line. For example, the local line LL may further include a pipeline. The local lines LL may be connected to the memory blocks MB1 through MBk 11, respectively, and the bit lines BL1 through BLm may be commonly connected to the memory blocks MB1 through MBk 11. The memory blocks MB1 through MBk 11 may be implemented in a two-dimensional or three-dimensional structure. For example, memory cells may be arranged in a direction parallel to the substrate in the memory block 11 of a two-dimensional structure. For example, memory cells may be stacked in a direction perpendicular to the substrate in the memory block 11 of the three-dimensional structure.

The peripheral circuitry 200 may be configured to perform programming, reading and erasing operations of the selected memory block 11 under the control of the control logic 300. For example, the peripheral circuitry 200 may include a voltage generation circuit 210, a row decoder 220, a page buffer group 230, a column decoder 240, input/output circuitry 250, a pass/fail determiner (pass/fail check circuitry) 260, and source line drivers 270.

The voltage generation circuit 210 may generate various operation voltages Vop used in program, read, and erase operations in response to the operation signal OP _ CMD. Further, the voltage generation circuit 210 may selectively discharge the local line LL in response to the operation signal OP _ CMD. For example, the voltage generation circuit 210 may generate a program voltage, a verify voltage, a read voltage, a pass voltage, and a select transistor operating voltage under the control of the control logic 300.

The row decoder 220 may transfer the operation voltage Vop to the local line LL connected to the selected memory block 11 in response to a row decoder control signal AD _ signal. For example, the row decoder 220 may selectively apply an operating voltage (e.g., a program voltage, a verify voltage, a read voltage, a pass voltage, etc.) generated in the voltage generation circuit 210 to a word line among the local lines LL in response to the control signal AD _ signal.

For example, the row decoder 220 applies the program voltage generated in the voltage generation circuit 210 to a selected word line among the local lines LL and applies the pass voltage generated in the voltage generation circuit 210 to the remaining unselected word lines in response to the row decoder control signal AD _ signal during the program voltage application operation. Further, the row decoder 220 applies the read voltage generated in the voltage generation circuit 210 to a selected word line among the local lines LL and applies the pass voltage generated in the voltage generation circuit 210 to the remaining unselected word lines in response to the row decoder control signal AD _ signal during the read operation.

The page buffer group 230 may include a plurality of page buffers PB1 to PBm231 connected to bit lines BL1 to BLm. The page buffers PB1 through PBm231 may operate in response to a page buffer control signal PBSIGNAL. For example, the page buffers PB1 to PBm231 may temporarily store data to be programmed during a program operation, or may sense voltages or currents of the bit lines BL1 to BLm during a read operation or a verify operation. The page buffer group 230 may sense threshold voltages of a drain select transistor and a source select transistor included in a selected memory block during a GBB check operation, and generate and output a sensing voltage VPB according to a sensing result. For example, during the GBB check operation, the page buffer group 230 may generate and output the sensing voltage VPB based on the number of selection transistors, of which the threshold voltage is lower than the first measurement voltage, among the drain selection transistors and the source selection transistors, and may generate and output the sensing voltage VPB based on the number of selection transistors, of which the threshold voltage is higher than the second measurement voltage, among the drain selection transistors and the source selection transistors.

The column decoder 240 may transfer data between the input/output circuit 250 and the page buffer group 230 in response to a column address CADD. For example, the column decoder 240 may exchange data with the page buffer 231 through the data lines DL, or may exchange data with the input/output circuit 250 through the column lines CL.

Input/output circuit 250 may transmit command CMD and address ADD received from controller 1200 of fig. 1 to control logic 300. In addition, input/output circuits 250 may exchange DATA DATA with column decoder 240.

The PASS/FAIL determiner 260 may generate a reference current in response to the permission BIT VRY _ BIT < # > during the erase verification operation, compare the sensing voltage VPB received from the page buffer group 230 with a reference voltage generated by the reference current, and generate a first PASS/FAIL signal 1st PASS/FAIL.

Further, the pass/fail determiner 260 counts the select transistors having the threshold voltages lower than the first measurement voltage based on the sensing voltage VPB received from the page buffer group 230 during the first test read operation of the GBB check operation to generate a first count, and counts the select transistors having the threshold voltages higher than the second measurement voltage based on the sensing voltage VPB received from the page buffer group 230 during the second test read operation of the GBB check operation to generate a second count. The second measurement voltage is a voltage higher than the first measurement voltage. The first measurement voltage and the second measurement voltage are within a normal threshold voltage range of the select transistor. The PASS/FAIL determiner 260 may generate the first PASS/FAIL signal 1st PASS/FAIL by comparing the sum of the first count and the second count with a threshold count. For example, when the sum of the first count and the second count is equal to or greater than the threshold count, the pass/FAIL determiner 260 may generate a first FAIL signal 1st FAIL, and the first FAIL signal 1st FAIL may be a signal indicating that the target block is a GBB block. Further, the PASS/fail determiner 260 generates a first PASS signal 1st PASS when the sum of the first count and the second count is less than the threshold count, and the first PASS signal 1st PASS may be a signal indicating that the block is not a GBB block.

The source line driver 270 may be connected to the memory cells included in the memory cell array 10 through the source lines SL, and may control a voltage applied to the source lines SL. The source line driver 270 may receive a source line control signal CTRL _ SL from the control logic 300, and may control a source line voltage (e.g., an erase voltage) applied to the source line SL based on the source line control signal CTRL _ SL.

The control logic 300 may output an operation signal OP _ CMD, a row decoder control signal AD _ signal, a page buffer control signal PBSIGNAL, a source line control signal CTRL _ SL, and a permission BIT VRY _ BIT < # > in response to a command CMD and an address ADD to control the peripheral circuit 200 to perform various operations, such as a program operation, a read operation, an erase operation, and the like. Further, during the GBB check operation, the control logic 300 may determine whether the selected memory block (i.e., the target block) is a GBB based on the first PASS/FAIL signal 1st PASS/FAIL or the second PASS/FAIL signal 2nd PASS/FAIL. When the target block is determined to be GBB, a replacement block selection operation may be performed to select a replacement block for replacing the target block. Further, when the program operation is performed by replacing the target block with the replacement block, the control logic 300 may control the peripheral circuit 200 to update the GBB information in the Content Addressable Memory (CAM) block.

The word line test circuit 400 performs a test operation on the local line LL connected to the target block during the GBB check operation. The test operation may be performed by applying a test voltage to the local line LL connected to the target block and comparing a measured voltage obtained by measuring the voltage of the local line LL with a reference voltage. For example, during the GBB check operation, when the measured voltage of the local line LL is lower than the reference voltage, the word line test circuit 400 determines the GBB check operation result as a failure and outputs the second FAIL signal 2nd FAIL. Further, during the GBB check operation, when the measured voltage of the local line LL is equal to or higher than the reference voltage, the word line test circuit 400 determines the GBB check operation result as PASS and outputs the second PASS signal 2nd PASS.

In the above-described embodiment, the word line test circuit 400 applies a test voltage to the local line LL connected to the target block, and then compares the measured voltage of the local line LL with a reference voltage to perform the GBB check operation. However, the word line test circuit 400 may perform the GBB check operation by applying a test current to the local line LL connected to the target block and comparing the measured current of the local line LL with a reference current.

FIG. 3 is a block diagram for describing a memory block included in the memory cell array of FIG. 2.

Referring to fig. 3, the plurality of memory blocks MB1 through MBk included in the memory cell array may include a Normal Block, a first Replacement Block 1st Replacement Block, a second Replacement Block 2nd Replacement Block, a first CAM Block 1st CAM Block, and a second CAM Block 2nd CAM Block. The plurality of memory blocks MB1 through MBk may be configured in a structure similar to each other.

Normal Block: MB1 through MBa are selected during various operations (e.g., a program operation, a read operation, or an erase operation) of semiconductor memory device 100 to: a memory block storing data to be programmed, reading the stored data, or erasing the stored data, the data to be programmed being received from the outside (the controller 1200 of fig. 1). From Normal Block: the memory block selected from MB1 through MBa may be defined as a target block.

First Replacement Block 1st Replacement Block: MBa +1 to MBb may be used to replace the Normal Block: memory blocks of memory blocks among MBs 1 through MBa that are determined to be initial bad blocks. For example, the address mapping is corrected so that the same as in Normal Block Normal: the address corresponding to the memory Block (e.g., MBl) determined as the initial bad Block among MBs 1 through MBa corresponds to the address corresponding to the address in the first Replacement Block 1st Replacement Block: the memory blocks included in MBa +1 to MBb (e.g., MBa + 1). During various operations, when an address corresponding to a memory Block (e.g., MB1) determined to be an initial bad Block is received from the controller 1200, a Replacement Block at the first Replacement Block 1 st: MBa +1 through the memory block MBa +1 included in the MBb, and the memory block MB1 determined as the initial bad block is not selected and various operations are performed.

Second Replacement Block 2nd Replacement Block: MBb +1 to MBk-2 can be used to replace the Normal Block: memory blocks of MBs 1 through MBa that are determined as memory blocks of the GBB according to the GBB check operation result. For example, the address mapping is corrected so that the same as in Normal Block Normal: the address corresponding to the memory Block determined as GBB (e.g., MB2) among MB1 to MBa corresponds to the address in the second Replacement Block 2nd Replacement Block: the memory blocks included in MBb +1 through MBk-2 (e.g., MBb + 1). During the entire operation, when an address corresponding to a memory Block (e.g., MB2) determined to be GBB is received from the controller 1200, the second Replacement Block 2nd Replacement Block is selected: the memory blocks MBb +1 included in MBb +1 to MBk-2, and the memory block determined as GBB (e.g., MB2) is not selected and the entire operation is performed.

First CAM Block 1st CAM Block: MBk-1 may store system data and information about the initial bad block. For example, the first CAM Block 1st CAM Block may store system data required for the operation of the semiconductor memory device 100, such as option parameter information, information on an operation voltage of the semiconductor memory device 100, and information on an initial bad Block. The information about the initial bad block may include mapping address information of the initial bad block and the replacement block.

Second CAM Block 2nd CAM Block: the MBk may store information about the memory block determined as the GBB as a result of the GBB check operation of the semiconductor memory device 100. For example, as a result of the GBB check operation of the semiconductor memory device 100, when a memory Block determined as GBB is detected, the second CAM Block 2nd CAM Block: the MBk updates and stores information about the memory block determined as the GBB. Therefore, whenever a memory Block determined to be GBB is detected during the entire operation of the semiconductor memory apparatus 100, the second CAM Block 2nd CAM Block: the MBk can perform the update operation.

In the present disclosure, when a memory Block determined as GBB is detected, in a first CAM Block 1st CAM Block different from the storage system data: second CAM Block 2nd CAM Block of MBk-1: the information on the memory block determined as the GBB is updated and stored in the MBk. Therefore, it is possible to prevent the first CAM Block 1st CAM Block storing system data from being operated for in accordance with the update operation during the entire operation: MBk-1 is programmed continuously, and therefore the first CAM Block 1st CAM Block that stores system data can be increased: stability of MBk-1.

Fig. 4 is a diagram for describing the memory block of fig. 2.

Referring to fig. 4, the memory block 11 may be connected to a plurality of word lines WL1 to WL16 arranged in parallel with each other between the first select lines and the second select lines. Here, the first selection line may be a source selection line SSL, and the second selection line may be a drain selection line DSL. For example, the memory block 11 may include a plurality of strings ST connected between the bit lines BL1 to BLm and the source lines SL. The bit lines BL1 to BLm may be respectively connected to the strings ST, and the source lines SL may be commonly connected to the strings ST. Since the strings ST may be configured to be identical to each other, the string ST connected to the first bit line BL1 will be described in detail as an example.

The string ST may include a source select transistor SST, a plurality of memory cells MC1 to MC16, and a drain select transistor DST connected in series between a source line SL and a first bit line BL 1. One string ST may include at least one or more of the source select transistor SST and the drain select transistor DST, and may include more memory cells MC1 through MC16 than the number shown in the drawing.

A source of the source selection transistor SST may be connected to a source line SL, and a drain of the drain selection transistor DST may be connected to a first bit line BL 1. The memory cells MC1 through MC16 may be connected in series between the source select transistor SST and the drain select transistor DST. The gates of the source select transistors SST included in the different strings ST may be connected to a source select line SSL, the gates of the drain select transistors DST may be connected to a drain select line DSL, and the gates of the memory cells MC1 through MC16 may be connected to a plurality of word lines WL1 through WL 16. A group of memory cells connected to the same word line among memory cells included in different strings ST may be referred to as a physical page PPG. Thus, the memory block 11 may include a number of physical pages PPG of word lines WL1 to W16.

One memory cell may store one bit of data. This is commonly referred to as a Single Level Cell (SLC). In this case, one physical page PPG may store one Logical Page (LPG) data. One Logical Page (LPG) data may include the number of unit data bits included in one physical page PPG. In addition, one memory cell may store two or more data bits. This is commonly referred to as a multi-level cell (SLC). In this case, one physical page PPG may store two or more Logical Page (LPG) data.

FIG. 5 is a diagram to describe an embodiment of a memory block configured in three dimensions.

Referring to fig. 5, the memory cell array 10 may include a plurality of memory blocks MB1 through MBk 11. Each memory block 11 may include a plurality of strings ST11 through ST1m and ST21 through ST2 m. Each of the plurality of strings ST11 to ST1m and ST21 to ST2m may extend in the vertical direction (Z direction). In the memory block 11, m strings may be arranged in the row direction (X direction). In fig. 5, two strings are arranged in the column direction (Y direction), but this is for convenience of description, and three or more strings may be arranged in the column direction (Y direction).

Each of the plurality of strings ST11 to ST1m and ST21 to ST2m may include at least one source select transistor SST, first to nth memory cells MC1 to MCn, and at least one drain select transistor DST.

The source selection transistor SST of each string may be connected between a source line SL and the memory cells MC1 to MCn. The source select transistors of the strings arranged in the same row may be connected to the same source select line. The source select transistors of the strings ST11 to ST1m arranged in the first row may be connected to a first source select line SSL 1. The source selection transistors of the strings ST21 to ST2m arranged in the second row may be connected to a second source selection line SSL 2. As another example, the source select transistors of the strings ST11 to ST1m and ST21 to ST2m may be commonly connected to one source select line.

The first to nth memory cells MC1 to MCn of each string may be connected in series with each other between the source selection transistor SST and the drain selection transistor DST. Gates of the first to nth memory cells MC1 to MCn may be connected to the first to nth word lines WL1 to WLn, respectively.

As an embodiment, at least one memory cell among the first to nth memory cells MC1 to MCn may be used as a dummy memory cell. When the dummy memory cell is provided, the voltage or current of the corresponding string can be stably controlled. Therefore, the reliability of the data stored in the memory block 11 can be improved.

The drain select transistor DST of each string may be connected between the bit line and the memory cells MC1 through MCn. The drain select transistors DST of the strings arranged in the row direction may be connected to a drain select line extending in the row direction. The drain select transistors DST of the strings ST11 to ST1m of the first row may be connected to the first drain select line DSL 1. The drain select transistors DST of the strings ST21 to ST2m of the second row may be connected to the second drain select line DSL 2.

Among the memory blocks MB1 to MBk, one memory block may share the word lines WL1 to WLn with another memory block, and a memory block sharing the word lines WL1 to WLn may be defined as a shared memory block.

Fig. 6 is a block diagram for describing the control logic of fig. 2.

Referring to fig. 6, the control logic 300 may include a Read Only Memory (ROM)310, a control signal generator 320, a GBB check controller 330, a GBB determiner 340, a replacement block selector 350, and a CAM data update manager 360.

In the ROM310, ROM DATA ROM _ DATA corresponding to algorithms for performing various operations (a program operation, a read operation, an erase operation, etc.) of the semiconductor memory device may be stored. The ROM310 may output ROM DATA ROM _ DATA in response to the received command CMD. For example, when the received command CMD corresponds to a program operation, the ROM310 outputs ROM DATA ROM _ DATA corresponding to the program operation. Further, when the received command CMD corresponds to an erase operation, the ROM310 outputs ROM DATA ROM _ DATA for the erase operation.

The control signal generator 320 generates and outputs an operation signal OP _ CMD, a row decoder control signal AD _ signal, a page buffer control signal PBSIGNAL, a source line control signal CTRL _ SL, and a permission BIT VRY _ BIT < # > for controlling the peripheral circuit 200 of fig. 2 during the entire operation in response to the ROM DATA ROM _ DATA. For example, the control signal generator 320 generates and outputs an operation signal OP _ CMD, a row decoder control signal AD _ signal, a page buffer control signal PBSIGNAL, a source line control signal CTRL _ SL, and a permission BIT VRY _ BIT < # > for controlling the peripheral circuit 200 of fig. 2 to perform a program operation in response to ROM DATA ROM _ DATA corresponding to the program operation.

The GBB CHECK controller 330 generates and outputs a GBB CHECK signal GBB _ CHECK, which indicates that the GBB CHECK operation is performed before the program operation is performed, in response to the ROM DATA ROM _ DATA corresponding to the program operation. The control signal generator 320 may generate and output an operation signal OP _ CMD, a row decoder control signal AD _ signal, a page buffer control signal PBSIGNAL, a source line control signal CTRL _ SL, and a permission BIT VRY _ BIT < # > in response to the GBB CHECK signal GBB _ CHECK, for controlling the peripheral circuit 200 of fig. 2 to perform the GBB CHECK operation. The GBB CHECK controller 330 may generate and output a GBB CHECK signal GBB _ CHECK in response to the ROM DATA ROM _ DATA corresponding to the program operation to perform the following GBB CHECK operation: an erase operation performed immediately before the program operation, or immediately after the erase operation performed before the program operation.

The GBB determiner 340 receives the first PASS/FAIL signal 1st PASS/FAIL from the PASS/FAIL determiner 260 of fig. 2 or the second row PASS/FAIL signal 2nd PASS/FAIL from the word line test circuit 400 of fig. 2 during the GBB check operation. The GBB determiner 340 determines whether a target memory block (i.e., a target block) of the GBB check operation is a GBB in response to the received first PASS/FAIL signal 1st PASS/FAIL or the second PASS/FAIL signal 2nd PASS/FAIL. For example, the GBB determiner 340 may determine whether the target block is a GBB based on the first PASS/FAIL signal 1st PASS/FAIL, determine whether the target block is a GBB based on the second PASS/FAIL signal 2nd PASS/FAIL, or determine whether the target block is a GBB based on the first PASS/FAIL signal 1st PASS/FAIL and the second PASS/FAIL signal 2nd PASS/FAIL. When the target block is determined as the GBB, the GBB determiner 340 may output information about the target block as GBB information GBB _ Inf o.

Replacement Block selector 350 receives GBB information GBB _ info from GBB determiner 340, and updates GBB information GBB _ info from second Replacement Block 2nd Replacement Block of fig. 3: of MBb +1 to MBk-2, a memory block that does not store valid data is selected as a replacement block to replace the target block. The selected replacement block may be a memory block in an erased state or a state storing invalid data. The replacement block selector 350 may generate and output replacement block operation information RP _ OP including information on the selected replacement block. The control signal generator 320 may generate and output the operation signal OP _ CMD, the row decoder control signal AD _ signal, the page buffer control signal PBSIGNAL, the source line control signal CTRL _ SL, and the permission BIT VRY _ BIT < # > in response to the replacement block operation information RP _ OP in order to control the peripheral circuit 200 of fig. 2 to perform a program operation on the replacement block instead of the target block.

The CAM data UPDATE manager 360 generates and outputs a CAM data UPDATE signal CAM _ UPDATE for updating information on the second CAM Block 2nd CAM Block of fig. 3 in response to the GBB information GBB _ Info and the replacement Block operation information RP _ OP: information of memory blocks determined to be GBBs stored in MBk. Further, the CAM data update manager 360 transmits GBB information GBB _ Info and replacement block operation information RP _ OP to the input/output circuit 250 of fig. 2 to be stored in the page buffer group 230. The control signal generator 320 may generate and output an operation signal OP _ CMD, a row decoder control signal AD _ signal, a page buffer control signal PBSIGNAL, a source line control signal CTRL _ SL, and a permission BIT VRY _ BIT < # > in response to the CAM data UPDATE signal CAM _ UPDATE for controlling the peripheral circuit 200 to store GBB information GBB _ Info, and replacement Block operation information RP _ OP in the second CAM Block 2nd CAM Block: in MBk. GBB information GBB _ Info may include information on a target block, and replacement block operation information RP _ OP may include information on a replacement block for replacing the target block.

Fig. 7 and 8 are flowcharts for describing the operation of the semiconductor memory device according to the embodiment of the present disclosure.

A method of operating a semiconductor memory device according to an embodiment of the present disclosure will be described below with reference to fig. 2 to 8.

In step S710, the semiconductor memory device 100 receives a command CMD corresponding to a program operation from the outside (e.g., the controller 1200 of fig. 1). The semiconductor memory device 100 may receive an address ADD and DATA to be programmed and a command CMD. The control logic 300 selects a target block on which a program operation is to be performed in response to a command CMD and an address ADD corresponding to the program operation. The target Block is the Normal Block: any one of MB1 to MBa (e.g., MB 1).

In step S720, the peripheral circuit 200 performs an erase operation for erasing invalid data stored in the target block MB1, according to the control of the control logic 300. For example, the source line driver 270 receives a source line control signal CTRL _ SL from the control logic 300 and applies an erase voltage to the source lines SL of the target block MB1 based on the source line control signal CTRL _ SL. The page buffer group 230 controls the bit lines BL1 to BLm to be in a floating state, or applies an erase voltage. The word lines of the target block MB1 may be controlled to a ground voltage level by the row decoder 220. Accordingly, the data stored in the memory cells included in the target block MB1 is erased.

When the target block MB1 is a free block in an erased state in which no data is stored, the above-described step S720 may be skipped.

In step S730, a status check operation is performed on the target block MB1 on which the erase operation is performed. The state checking operation is determined to pass when the number of memory cells having a threshold voltage higher than a target erase level among the memory cells included in the target block MB1 is equal to or less than a set number, and is determined to fail when the number of memory cells having a threshold voltage higher than a target erase level is greater than the set number. The status check operation may be a verify operation for determining whether the erase operation is normally performed.

As a result of the state checking operation described above in step S730, when the state checking operation is determined to pass (pass), the GBB checking operation is performed in step S740.

For example, the ROM of the control logic 300 outputs ROM DATA ROM _ DATA in response to a command CMD corresponding to a program operation. The GBB CHECK controller 330 generates and outputs a GBB CHECK signal GBB _ CHECK after performing the erase operation of step S720 described above in response to the ROM DATA ROM _ DATA. The control signal generator 320 generates and outputs an operation signal OP _ CMD, a row decoder control signal AD _ signal, a page buffer control signal PBSIGNAL, a source line control signal CTRL _ SL, and a permission BIT VRY _ BIT < # > for controlling the peripheral circuit 200 to perform the GBB CHECK operation, in response to the GBB CHECK signal GBB _ CHECK. The GBB CHECK controller 330 may generate and output a GBB CHECK signal GBB _ CHECK in response to the ROM DATA ROM _ DATA corresponding to the program operation to perform the following GBB CHECK operation: an erase operation performed immediately before the program operation is performed, immediately before the program operation, or immediately before the erase operation performed before the program operation.

An operation method of the GBB check operation will be described later with reference to fig. 9 to 12.

As a result of the GBB check operation in step S750, it is determined whether the target block MB1 is detected as a GBB. For example, the GBB determiner 340 of the control logic 300 may determine whether the target block is a GBB based on the first PASS/FAIL signal 1st PASS/FAIL, the second PASS/FAIL signal 2nd PASS/FAIL, or the first PASS/FAIL signal 1st PASS/FAIL and the second PASS/FAIL signal 2nd PASS/FAIL, and may output information about the target block as GBB information GBB _ Info when the target block is determined to be a GBB.

As a result of the GBB check operation in step S750 (no), when it is determined that the target block is not detected as a GBB, a program operation is performed on the target block in step S760.

For example, the plurality of page buffers PB1 to PBm231 of the page buffer group 230 receive and temporarily store DATA to be programmed, and adjust the potential levels of the bit lines BL1 to BLm according to the temporarily stored DATA. The voltage generation circuit 210 generates and outputs an operation voltage Vop including a program voltage and a pass voltage. The row decoder 220 applies a program voltage to a selected word line of the target block MB1 and applies a pass voltage to the remaining unselected word lines to perform a program operation.

As a result of the GBB check operation in step S750 (yes), when it is determined that the target block is detected as GBB, an erase operation is performed by selecting a replacement block in step S770.

For example, the Replacement Block selector 350, in response to the GBB information GBB _ info, converts the second Replacement Block 2nd Replacement Block: any one of MBb +1 to MBk-2 (e.g., MBb +1) is selected as a replacement block to replace the target block. The replacement block selector 350 may generate and output replacement block operation information RP _ OP including information on the selected replacement block.

The control signal generator 320 generates and outputs a page buffer control signal PBSIGNAL and a source line control signal CTRL _ SL for controlling the peripheral circuit 200 to perform an erase operation of the replacement block MBb +1 in response to the replacement block operation information RP _ OP. For example, the source line driver 270 receives a source line control signal CTRL _ SL from the control logic 300, and applies an erase voltage to the source lines SL of the replacement block MBb +1 based on the source line control signal CTRL _ SL. The page buffer group 230 controls the bit lines BL1 to BLm to be in a floating state, or applies an erase voltage. The word lines of the replacement block MBb +1 can be controlled to the ground voltage level by the row decoder 220. The data stored in the memory cells included in the replacement block MBb +1 are erased.

In step S780, a state check operation is performed on the replacement block MBb +1 on which the erase operation is performed. The state checking operation is determined to pass when the number of memory cells having a threshold voltage higher than the target erase level among the memory cells included in the replacement block MBb +1 is equal to or less than a set number, and the state checking operation is determined to fail when the number of memory cells having a threshold voltage higher than the target erase level is greater than the set number. The status check operation may be a verify operation for determining whether the erase operation is normally performed.

As a result of the status check operation in the above-described step S780, when the status check operation is determined to be failed (fail), the second Replacement Block 2nd Replacement Block: any one (e.g., MBk-2) among MBb +1 to MBk-2 except for the previously selected replacement block MBb +1 is newly selected as a replacement block for replacing the target block, and the operation is performed again according to the above-described step S770.

As a result of the state checking operation in step S780 described above, when the state checking operation is determined to pass (pass), a program operation is performed on the replacement block (e.g., MBb +1) in step S790.

For example, the control signal generator 320 generates and outputs an operation signal OP _ CMD, a row decoder control signal AD _ signal, a page buffer control signal PBSIGNAL, a source line control signal CTRL _ SL, and a permission BIT VRY _ BIT < # > for controlling the peripheral circuit 200 to perform a program operation on the replacement block (e.g., MBb + 1).

The plurality of page buffers PB1 to PBm231 of the page buffer group 230 receive and temporarily store DATA to be programmed, and adjust potential levels of the bit lines BL1 to BLm according to the temporarily stored DATA. The voltage generation circuit 210 generates and outputs an operation voltage Vop including a program voltage and a pass voltage. The row decoder 220 applies a program voltage to a selected word line of the replacement block MBb +1 and applies a pass voltage to the remaining unselected word lines to perform a program operation.

When the programming operation on the replacement Block MBb +1 is completed, a CAM data update operation for updating the data on the second CAM Block 2nd CAM Block: information of the target block MB1 in MBk determined as GBB.

For example, the CAM data UPDATE manager 360 generates and outputs a CAM data UPDATE signal CAM _ UPDATE in response to the GBB information GBB _ info and the replacement block operation information RP _ OP. The control signal generator 320 generates and outputs an operation signal OP _ CMD, a row decoder control signal AD _ signal, a page buffer control signal PBSIGNAL, a source line control signal CTRL _ SL, and a permission BIT VRY _ BIT < # > for controlling the peripheral circuit 200 to perform operations on the second CAM Block 2nd CAM Block: MBk performs a CAM data update operation (or CAM data program operation).

The plurality of page buffers PB1 to PBm231 of the page buffer group 230 temporarily store the GBB information GBB _ info and the replacement block operation information RP _ OP received from the CAM data update manager 360 as CAM data, and adjust the potential levels of the bit lines BL1 to BLm according to the temporarily stored CAM data. The voltage generation circuit 210 generates and outputs an operation voltage Vop including a program voltage and a pass voltage. The row decoder 220 outputs to the second CAM Block 2nd CAM Block: the selected word line of MBk applies a program voltage and applies a pass voltage to the remaining unselected word lines to perform a CAM data update operation. GBB information GBB _ Info may include information on a target block, and replacement block operation information RP _ OP may include information on a replacement block that replaces the target block.

The target block MB1 is a memory block of: the result of the state checking operation as the above step S730 is determined as pass, and the result of the GBB checking operation as the above step S750 is determined as GBB. Accordingly, the target block may be determined as a Program Status Fail (PSF) GBB (which is determined as a bad block) during a program operation, and a CAM data update operation may be performed by including information about the target block in GBB information GBB _ Info.

As a result of the state checking operation in the above-described step S730, when the state checking operation is determined to be a failure (fail), the GBB checking operation is performed in step S810.

As a result of the GBB check operation in step S820, it is determined whether the target block MB1 is detected as a GBB. For example, the GBB determiner 340 of the control logic 300 may determine whether the target block is a GBB based on the first PASS/FAIL signal 1st PASS/FAIL, the second PASS/FAIL signal 2nd PASS/FAIL, or the first PASS/FAIL signal 1st PASS/FAIL and the second PASS/FAIL signal 2nd PASS/FAIL, and may output information about the target block as GBB information GBB _ Info when the target block is determined to be a GBB.

As a result of the GBB check operation in step S820 (no), when it is determined that the target block is not detected as GBB, an erase operation is performed by selecting a replacement block in step S830.

The control signal generator 320 generates and outputs a page buffer control signal PBSIGNAL and a source line control signal CTRL _ SL for controlling the peripheral circuit 200 to perform an erase operation of the replacement block MBb +1 in response to the replacement block operation information RP _ OP. For example, the source line driver 270 receives a source line control signal CTRL _ SL from the control logic 300, and applies an erase voltage to the source lines SL of the replacement block MBb +1 based on the source line control signal CTRL _ SL. The page buffer group 230 controls the bit lines BL1 to BLm to be in a floating state, or applies an erase voltage. The word lines of the replacement block MBb +1 may be controlled to the ground voltage level by the row decoder 220. Accordingly, the data stored in the memory cells included in the replacement block MBb +1 is erased.

In step S840, a state check operation is performed on the replacement block MBb +1 on which the erase operation is performed. The state checking operation is determined to pass when the number of memory cells having a threshold voltage higher than the target erase level among the memory cells included in the replacement block MBb +1 is equal to or less than a set number, and the state checking operation is determined to fail when the number of memory cells having a threshold voltage higher than the target erase level is greater than the set number. The status check operation may be a verify operation for determining whether the erase operation is normally performed.

As a result of the status check operation in the above-described step S840, when the status check operation is determined to have failed (fail), the second Replacement Block 2nd Replacement Block: any one (e.g., MBk-2) among MBb +1 to MBk-2 except for the previously selected replacement block MBb +1 is newly selected as a replacement block for replacing the target block, and the operation is performed again according to the above-described step S830.

As a result of the state checking operation in the above-described step S840, when the state checking operation is determined to pass (pass), a program operation is performed on the replacement block (e.g., MBb +1) in step S850.

For example, the CAM data UPDATE manager 360 generates and outputs a CAM data UPDATE signal CAM _ UPDATE in response to the GBB information GBB _ info and the replacement block operation information RP _ OP. The control signal generator 320 generates and outputs an operation signal OP _ CMD, a row decoder control signal AD _ signal, a page buffer control signal PBSIGNAL, a source line control signal CTRL _ SL, and a permission BIT VRY _ BIT < # > for controlling the peripheral circuit 200 to perform operations on the second CAM Block 2nd CAM Block: MBk to perform a CAM data update operation (or CAM data program operation).

The plurality of page buffers PB1 to PBm231 of the page buffer group 230 temporarily store the GBB information GBB _ info and the replacement block operation information RP _ OP received from the CAM data update manager 360 as CAM data, and adjust the potential levels of the bit lines BL1 to BLm according to the temporarily stored CAM data. The voltage generation circuit 210 generates and outputs an operation voltage Vop including a program voltage and a pass voltage. The row decoder 220 outputs to the second CAM Block 2nd CAM Block: the selected word line of MBk applies a program voltage and applies a pass voltage to the remaining unselected word lines to perform a CAM data update operation. Preferably, the GBB information GBB _ Info includes information on a target block, and the replacement block operation information RP _ OP includes information on a replacement block that replaces the target block.

The target block MB1 is a memory block as follows: as a result of the state checking operation of the above step S730, it is determined as a failure, and as a result of the GBB checking operation of the above step S820, it is determined not to be a GBB. Accordingly, the target block may be determined as a block in which an Erase State Failure (ESF) occurs, and the CAM data update operation may be performed by including information about the target block in GBB information GBB _ Info.

As a result of the GBB check operation in step 750, when it is determined in step S820 that the target block is detected as GBB (yes), an erase operation is performed by selecting a replacement block in step S870.

For example, the Replacement Block selector 350, in response to the GBB information GBB _ info, converts the second Replacement Block 2nd Replacement Block: MBb +1 to MBk-2) is selected as the replacement block to replace the target block. The replacement block selector 350 may generate and output replacement block operation information RP _ OP including information on the selected replacement block

The control signal generator 320 generates and outputs a page buffer control signal PBSIGNAL and a source line control signal CTRL _ SL for controlling the peripheral circuit 200 to perform an erase operation of the replacement block MBb +1 in response to the replacement block operation information RP _ OP. For example, the source line driver 270 receives a source line control signal CTRL _ SL from the control logic 300, and applies an erase voltage to the source lines SL of the replacement block MBb +1 based on the source line control signal CTRL _ SL. The page buffer group 230 controls the bit lines BL1 to BLm to be in a floating state, or applies an erase voltage. The word lines of the replacement block MBb +1 may be controlled to the ground voltage level by the row decoder 220. Accordingly, the data stored in the memory cells included in the replacement block MBb +1 is erased.

In step S880, a state check operation is performed on the replacement block MBb +1 on which the erase operation is performed. The state checking operation is determined to pass when the number of memory cells having a threshold voltage higher than the target erase level among the memory cells included in the replacement block MBb +1 is equal to or less than a set number, and the state checking operation is determined to fail when the number of memory cells having a threshold voltage higher than the target erase level is greater than the set number. The status check operation may be a verify operation for determining whether the erase operation is normally performed.

As a result of the status check operation in the above-described step S880, when the status check operation is determined to have failed (fail), the second Replacement Block 2nd Replacement Block: any one (e.g., MBk-2) among MBb +1 to MBk-2 except for the previously selected replacement block MBb +1 is newly selected as the replacement block of the replacement target block, and the operation is performed again according to the above-described step S870.

As a result of the state checking operation in the above-described step S880, when the state checking operation is determined to pass (pass), a program operation is performed on the replacement block (e.g., MBb +1) in step S890.

The plurality of page buffers PB1 to PBm231 of the page buffer group 230 temporarily store the GBB information GBB _ info and the replacement block operation information RP _ OP received from the CAM data update manager 360 as CAM data, and adjust the potential levels of the bit lines BL1 to BLm according to the temporarily stored CAM data. The voltage generation circuit 210 generates and outputs an operation voltage Vop including a program voltage and a pass voltage. The row decoder 220 outputs to the second CAM Block 2nd CAM Block: the selected word line of MBk applies a program voltage and applies a pass voltage to the remaining unselected word lines to perform a CAM data update operation. Preferably, the GBB information GBB _ Info includes information on a target block, and the replacement block operation information RP _ OP includes information on a replacement block that replaces the target block.

The target block MB1 is a memory block as follows: the result of the state checking operation as the above step S730 is determined to be a failure, and the result of the GBB checking operation as the above step S820 is determined to be a GBB. Accordingly, the target block MB1 may be determined to be the ESF GBB, and the CAM data update operation may be performed by including information about the target block in the GBB information GBB _ Info.

In an embodiment of the present disclosure, after the erase operation is performed on the target block, a GBB check operation is performed on the target block immediately. However, the GBB check operation may be performed on the target block immediately before the erase operation is performed on the target block. That is, in the present disclosure, the GBB check operation is performed on the target block before the program operation is performed on the target block. Therefore, it is possible to determine in advance whether the target block is the GBB according to the result of the program operation of the target block before determining whether it is a bad block.

Fig. 9 is a flowchart for describing a GBB check operation according to an embodiment of the present disclosure.

Fig. 10 is a threshold voltage distribution diagram for describing the GBB inspection operation of fig. 9.

Referring to fig. 2, 9, and 10, a GBB inspection operation according to an embodiment of the present disclosure will be described as follows.

The GBB checking operation according to an embodiment of the present disclosure may include steps S741 to S745.

In step S741, the peripheral circuit 200 performs a test read operation on a target block (e.g., MB1) using the first measurement voltage V1.

For example, the voltage generation circuit 210 generates and outputs the first measurement voltage V1, and the row decoder 220 applies the first measurement voltage V1 to one of the selection lines (drain selection line and source selection line) of the target block MB 1. The page buffers PB1 to PBm of the page buffer group 230 sense voltages or currents corresponding to the bit lines BL1 to BLm to detect a selection transistor having a threshold voltage lower than the first measurement voltage V1 among drain or source selection transistors connected to one selection line.

Thereafter, the row decoder 220 applies the first measurement voltage V1 to the next selection line, and the page buffers PB1 to PBm sense voltages or currents corresponding to the bit lines BL1 to BLm to detect a selection transistor having a threshold voltage lower than the first measurement voltage V1 among drain or source selection transistors connected to the next selection line. In the above method, the selection transistor having the threshold voltage lower than the first measurement voltage V1 among the selection transistors included in the target block MB1 is detected.

In step S742, the pass/fail determiner 260 counts the select transistors having a threshold voltage lower than the first measurement voltage V1 to generate a first count. For example, the pass/fail determiner 260 counts the select transistors a having the threshold voltage lower than the first measurement voltage based on the sensing voltage VPB received from the page buffer group 230 during the first test read operation of the GBB check operation to generate a first count.

In step S743, the peripheral circuit 200 performs a test read operation on the target block MB1 using the second measurement voltage V2.

For example, the voltage generation circuit 210 generates and outputs the second measurement voltage V2, and the row decoder 220 applies the second measurement voltage V2 to one of the selection lines (drain selection line and source selection line) of the target block MB 1. The page buffers PB1 to PBm of the page buffer group 230 sense voltages or currents corresponding to the bit lines BL1 to BLm to detect a select transistor having a threshold voltage higher than the second measurement voltage V2 among drain select transistors or source select transistors connected to one select line.

Thereafter, the row decoder 220 applies a second measurement voltage V2 to the next selection line, and the page buffers PB1 to PBm sense voltages or currents corresponding to the bit lines BL1 to BLm to detect a selection transistor having a threshold voltage higher than the second measurement voltage V2 among drain or source selection transistors connected to the next selection line. In the above method, the selection transistor having the threshold voltage higher than the second measurement voltage V2 among the selection transistors included in the target block MB1 is detected.

In step S744, the pass/fail determiner 260 counts the select transistors having a threshold voltage higher than the second measurement voltage V2 to generate a second count. For example, the pass/fail determiner 260 counts the select transistors B having the threshold voltage higher than the second measurement voltage based on the sensing voltage VPB received from the page buffer group 230 during the second test read operation of the GBB check operation to generate a second count.

In step S745, the sum of the first count and the second count is compared with a threshold count to determine whether the target block MB1 is a block in which a GBB is detected or a block in which a GBB is not detected.

For example, when the sum of the first count and the second count is equal to or greater than the threshold count (yes), the pass/FAIL determiner 260 generates and outputs a first FAIL signal 1st FAIL indicating that the target block MB1 is a block in which the GBB is detected. Further, when the sum of the first count and the second count is smaller than the threshold count (no), the PASS/fail determiner 260 generates and outputs a first PASS signal 1st PASS indicating that the target block MB1 is a block in which no GBB is detected. In an embodiment, when the number of the selection transistors of which the threshold voltage exceeds the normal range is greater than the threshold count, the control logic determines the target block as a grown bad block and selects a replacement block for replacing the target block from among the plurality of second replacement blocks.

The second measurement voltage V2 is a voltage higher than the first measurement voltage V1, and the first measurement voltage V1 and the second measurement voltage V2 are within a normal threshold voltage range of the select transistor.

As described above, in the GBB check operation according to the embodiment of the present disclosure, when the number of select transistors exceeding the normal threshold voltage range among the select transistors included in the target block is equal to or greater than the threshold, the target block may be determined as the GBB block.

Fig. 11 is a flowchart for describing a GBB check operation according to another embodiment of the present disclosure.

Fig. 12 is a voltage waveform diagram for describing the GBB inspection operation of fig. 11.

A GBB checking operation according to another embodiment of the present disclosure will be described below with reference to fig. 2, 11, and 12.

The GBB checking operation according to another embodiment of the present disclosure may include steps S746 to S752.

In step S746, the word line test circuit 400 applies a test voltage having a predetermined potential level to even-numbered local lines among the local lines LL connected to the target block (e.g., MB1) for a predetermined time period. The even-numbered partial lines are partial lines arranged with an even number of partial lines including a plurality of selection lines and word lines arranged in order. The term "predetermined" as used herein with respect to a parameter, such as a predetermined time and a predetermined potential level, refers to a value that has been determined before the parameter was used in a process or algorithm. For some embodiments, the values of the parameters are determined before the process or algorithm begins. In other embodiments, the value of the parameter is determined during the process or algorithm but before the parameter is used in the process or algorithm.

In step S747, the word line test circuit 400 senses the potential of the even local lines to measure the first measurement voltage Vmeas 1.

In step S748, the word line test circuit 400 compares the reference voltage Vref with the first measurement voltage Vmeas 1. For example, when the first measurement voltage Vmeas1 is lower than the reference voltage Vref (no), it is determined that a defect exists in the word line of the target block MB 1. Accordingly, the word line test circuit 400 generates and outputs the second FAIL signal 2nd FAIL, which 2nd FAIL indicates that the target block MB1 is a block in which the GBB is detected.

When the first measurement voltage Vmeas1 is equal to or higher than the reference voltage Vref (yes) in step S748, the word line test circuit 400 applies a test voltage having a predetermined potential level to odd-numbered local lines among the local lines LL connected to the target block MB1 for a predetermined time in step S749. The odd-numbered partial lines are partial lines arranged with an odd number of partial lines including a plurality of selection lines and word lines arranged in order. The odd-numbered partial lines LL and the even-numbered partial lines are arranged to cross each other.

In step S751, the word line test circuit 400 senses the potential of the even-numbered local lines to measure the second measurement voltage Vmeas 2.

In step S752, the word line test circuit 400 compares the reference voltage Vref with the second measurement voltage Vmeas 2. For example, when the second measurement voltage Vmeas2 is lower than the reference voltage Vref (no), it is determined that a defect exists in the word line of the target block MB 1. Accordingly, the word line test circuit 400 generates and outputs the second FAIL signal 2nd FAIL, which 2nd FAIL indicates that the target block MB1 is a block in which the GBB is detected.

When the second measurement voltage Vmeas2 is equal to or higher than the reference voltage Vref (yes), the word line test circuit 400 determines the target block MB1 as a normal block. Accordingly, the word line test circuit 400 generates and outputs the second PASS signal 2nd PASS indicating that the target block MB1 is a block in which the GBB is not detected.

As described above, in a GBB inspection operation according to another embodiment of the present disclosure, a target block may be determined as a GBB block by applying a test voltage to a local line of the target block and determining that a defect such as a leakage current or a bridge exists between word lines when a measured voltage of the local line is lower than a reference voltage.

In the above-described embodiment, the word line test circuit 400 applies a test voltage to the local line LL connected to the target block, and then compares the measurement voltage of the local line LL with the reference voltage to perform the GBB check operation. However, the word line test circuit 400 may perform the GBB check operation by applying a test current to the local line LL connected to the target block and comparing the measured current of the local line LL with a reference current.

FIG. 13 is a diagram depicting another embodiment of a memory system.

Referring to fig. 13, the memory system 30000 may be implemented as a cellular phone, a smart phone, a tablet PC, a Personal Digital Assistant (PDA), or a wireless communication device. The memory system 30000 can include a memory device 1100 and a controller 1200 capable of controlling the operation of the memory device 1100. The controller 1200 may control data access operations of the memory device 1100, such as program operations, erase operations, or read operations, under the control of the processor 3100.

Data programmed in the memory device 1100 may be output through the display 3200 under the control of the controller 1200.

The radio transceiver 3300 may transmit and receive a radio signal through an antenna ANT. For example, the radio transceiver 3300 may convert a radio signal received through the antenna ANT into a signal that may be processed by the processor 3100. Accordingly, the processor 3100 may process a signal output from the radio transceiver 3300 and transmit the processed signal to the controller 1200 and the display 3200. The controller 1200 may program signals addressed to the memory device 1100 for processing by the processor 3100. In addition, the radio transceiver 3300 may convert a signal output from the processor 3100 into a radio signal, and output the converted radio signal to an external device through an antenna ANT. The input device 3400 may be such a device as: a control signal for controlling the operation of the processor 3100, or data to be processed by the processor 3100 can be input. The input device 3400 may be implemented as a pointing device, such as a touchpad or a computer mouse, keypad, or keyboard. The processor 3100 may control the operation of the display 3200 so that data output from the controller 1200, data output from the radio transceiver 3300, or data output from the input device 3400 can be output through the display 3200.

According to an embodiment, the controller 1200, which is capable of controlling the operation of the memory device 1100, may be implemented as part of the processor 3100, and may also be implemented as a chip separate from the processor 3100.

Fig. 14 is a diagram for describing another example of the memory system.

Referring to fig. 14, the memory system 40000 may be implemented as a Personal Computer (PC), a tablet PC, a netbook, an e-reader, a Personal Digital Assistant (PDA), a Portable Multimedia Player (PMP), an MP3 player, or an MP4 player.

The memory system 40000 may include a memory device 1100 and a controller 1200 capable of controlling data processing operations of the memory device 1100.

The processor 4100 may output data stored in the memory device 1100 through the display 4300 according to data input via the input device 4200. For example, the input device 4200 may be implemented as a pointing device, such as a touchpad or a computer mouse, keypad, or keyboard.

The processor 4100 may control the overall operation of the memory system 40000 and control the operation of the controller 1200. According to an embodiment, the controller 1200 capable of controlling the operation of the memory device 1100 may be implemented as part of the processor 4100 or may be implemented as a chip separate from the processor 4100.

FIG. 15 is a diagram depicting another embodiment of a memory system.

Referring to fig. 15, the memory system 50000 may be implemented as an image processing apparatus such as a digital camera, a portable phone provided with a digital camera, a smart phone provided with a digital camera, or a tablet PC provided with a digital camera.

The memory system 50000 includes a memory device 1100 and a controller 1200 capable of controlling data processing operations (e.g., program operations, erase operations, or read operations) of the memory device 1100.

The image sensor 5200 of the memory system 50000 may convert the optical image to a digital signal. The converted digital signal may be transmitted to the processor 5100 or the controller 1200. The converted digital signal may be output through the display 5300 or stored in the memory device 1100 through the controller 1200 under the control of the processor 5100. In addition, data stored in the memory device 1100 can be output through the display 5300 under the control of the processor 5100 or the controller 1200.

According to embodiments, the controller 1200, which is capable of controlling the operation of the memory device 1100, may be implemented as part of the processor 5100, or may be implemented as a chip separate from the processor 5100.

FIG. 16 is a diagram depicting another embodiment of a memory system.

Referring to fig. 16, the memory system 70000 may be implemented as a memory card or a smart card. The memory system 70000 may include a memory device 1100, a controller 1200, and a card interface 7100.

The controller 1200 may control data exchange between the memory device 1100 and the card interface 7100. According to an embodiment, the card interface 7100 may be a Secure Digital (SD) card interface or a multimedia card (MMC) interface, but is not limited thereto. Further, the controller 1200 may be implemented by the example of the controller 1200 shown in fig. 2.

The card interface 7100 may provide an interface for data exchange between the host 60000 and the controller 1200 according to the protocol of the host 60000. According to an embodiment, the card interface 7100 may support a Universal Serial Bus (USB) protocol and an inter-chip (IC) -USB protocol. Here, the card interface may refer to hardware capable of supporting a protocol used by the host 60000, software installed in hardware, or a signal transmission method.

When the memory system 70000 is connected to a host interface 6200 of a host 60000 (such as a PC, a tablet PC, a digital camera, a digital audio player, a mobile phone, console video game hardware, or a digital set-top box), the interface 6200 may perform data communication with the memory device 1100 through the card interface 7100 and the controller 1200 under the control of the microprocessor 6100.

Although the detailed description of the present disclosure describes examples of the embodiments, various changes and modifications may be made without departing from the scope and technical spirit of the present disclosure. Therefore, the scope of the present disclosure should not be limited to the above-described embodiments, and should be determined by equivalents of the claims of the present disclosure and the appended claims.

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Semiconductor memory device and method of operating semiconductor memory device

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