阅读说明：本技术 一种透明显示面板结构及其制备方法 (Transparent display panel structure and preparation method thereof ) 是由 温质康 乔小平 苏智昱 于 2020-12-04 设计创作，主要内容包括：本发明涉及透明显示面板技术领域,特别涉及一种透明显示面板结构及其制备方法,包括玻璃基板,玻璃基板的一侧面上依次层叠设有金属栅极层、栅极绝缘层、有源层、蚀刻阻挡层、金属源漏极层、缓冲层、遮光层、平坦层和电极层,缓冲层与平坦层之间设有两个以上的纳米材料颗粒,两个以上的纳米材料颗粒围绕在遮光层周围,纳米材料颗粒与上下叠层形成光的折射面可改变侧边照射进器件的光线方向角度,使OLED发光器件发出的光不会照射在有源层上,稳定了金属氧化物薄膜晶体管的电子迁移率,使金属氧化物薄膜晶体管均匀供给电流和电压,并且随着纳米材料颗粒的加入,可减小遮光层的面积,增加透明区域的面积,从而提高了显示屏整体的透明程度。(The invention relates to the technical field of transparent display panels, in particular to a transparent display panel structure and a preparation method thereof, and the transparent display panel structure comprises a glass substrate, wherein a metal gate layer, a gate insulating layer, an active layer, an etching barrier layer, a metal source drain layer, a buffer layer, a shading layer, a flat layer and an electrode layer are sequentially stacked on one side surface of the glass substrate, more than two nano material particles are arranged between the buffer layer and the flat layer and surround the shading layer, the refraction surface of the nano material particles and the upper and lower stacked layers can change the direction angle of light irradiated into a device from the side edge, so that the light emitted by an OLED light-emitting device can not be irradiated on the active layer, the electron mobility of a metal oxide thin film transistor is stabilized, the metal oxide thin film transistor can uniformly supply current and voltage, and with the addition of the nano material, the area of the shading layer can be reduced, and the area of the transparent area is increased, so that the overall transparency of the display screen is improved.)

1. A transparent display panel structure is characterized by comprising a glass substrate, wherein a metal gate layer, a gate insulating layer, an active layer, an etching barrier layer, a metal source drain electrode layer, a buffer layer, a light shielding layer, a flat layer and an electrode layer are sequentially stacked on one side surface of the glass substrate;

the etching barrier layer is provided with a first through hole, the first through hole is arranged corresponding to the position of the active layer in the vertical direction of the transparent display panel structure, a metal source drain layer is filled in the first through hole, and the metal source drain layer filled in the first through hole is in contact with the active layer;

a second through hole is formed in the cache layer and is arranged in a position corresponding to the metal source drain layer in the vertical direction of the transparent display panel structure;

the light shielding layer is characterized in that a third through hole is formed in the flat layer, the third through hole and the second through hole are oppositely arranged and communicated, electrode layers are filled in the third through hole and the second through hole, the electrode layers filled in the second through hole are in contact with the metal source drain electrode layer, more than two nano material particles are further arranged between the buffer layer and the flat layer, and more than two nano material particles surround the light shielding layer.

2. The transparent display panel structure of claim 1, wherein the shape of the nano material particles is circular and the diameter of the nano material particles is in the range of

3. The transparent display panel structure of claim 1, wherein the number of the first vias is two, and the two first vias are symmetrically disposed on the active layer in a horizontal direction of the transparent display panel structure.

4. The transparent display panel structure according to claim 1, wherein the light-shielding layer has a thickness in a range of 0.1 μm to 0.3 μm.

5. The transparent display panel structure of claim 1, wherein the active layer has a thickness in the range of 0.03 μ ι η to 0.06 μ ι η.

6. A method of making the transparent display panel structure of claim 1, comprising the steps of:

step S1, providing a glass substrate, wherein a metal gate layer covers one side of the glass substrate;

step S2, forming a gate insulation layer covering the surface of the metal gate layer;

step S3, forming an active layer covering the surface of the gate insulation layer;

step S4, forming an etching barrier layer and covering the surface of the active layer;

step S5, forming a first via hole in the etching barrier layer, and forming a metal source drain layer in the first via hole;

step S6, forming a buffer layer, and covering the surface of the metal source drain electrode layer;

step S7, forming a second through hole in the buffer layer;

step S8, forming a shading layer and covering the surface of the buffer layer;

step S9 of filling two or more nanomaterial particles around the light-shielding layer;

step S10, forming a flat layer covering the surface of the shading layer;

and step S11, forming a third through hole in the flat layer, and sequentially forming an electrode layer in the second through hole and the third through hole.

7. The method of claim 6, wherein the shape of the nano material particles is circular and the diameter of the nano material particles is in the range of

8. The method for manufacturing the transparent display panel structure according to claim 6, wherein the number of the first vias is two, and the two first vias are symmetrically disposed on the active layer in a horizontal direction of the transparent display panel structure.

9. The method of claim 6, wherein the light-shielding layer has a thickness in a range of 0.1 μm to 0.3 μm.

10. The method of claim 6, wherein the active layer has a thickness in the range of 0.03 μm to 0.06 μm.

Technical Field

The invention relates to the technical field of transparent display panels, in particular to a transparent display panel structure and a preparation method thereof.

Background

An Organic Light Emitting Diode (abbreviated as OLED) display has the characteristics of low power consumption, wide viewing angle, fast response speed, ultra-Light, thin and good shock resistance, has a wide temperature range, can realize flexible display and large-area full-color display, and is considered as a display device with the most development potential by the industry;

with the market demand and the improvement of visual and sensory effects of people, the transparent OLED display is used as a display technology capable of displaying the background behind a picture, so that the interactive demand between virtual display and a real environment is met, and the development of transparent display is promoted;

the transparent OLED display consists of an OLED light-emitting device and a TFT thin film transistor, wherein the OLED device comprises an anode, a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer and a cathode; the light emitting mechanism of the OLED device is that two carriers, namely electrons and holes, are injected into an organic light emitting layer and are subjected to compound light emission in the organic light emitting layer; the real difficulty of transparent display is that the material of the device is changed into a base material with high transmittance, millions of tiny pixels need to be changed into enough transparency, the common method is to introduce transparent sub-pixels on the original four pixels of red, green, blue and white, and when countless transparent sub-pixels are distributed on a screen, the screen naturally obtains a transparent effect and simultaneously gives consideration to color image display;

generally, an OLED transparent display panel is prepared on a TFT device, the TFT device is mostly made of a metal oxide thin film transistor, an active layer in the metal oxide TFT is mostly made of an IGZO thin film, various base materials in the transparent display are all made of materials with high transmittance, but the IGZO thin film is very sensitive to light, and light emitted from the OLED device easily causes the active layer in the TFT device to be denatured and fail, which causes the TFT to have drift in electrical property, affects the electron mobility of the TFT device, and causes uneven display of the brightness of a display screen and screen distortion.

Disclosure of Invention

The technical problem to be solved by the invention is as follows: a transparent display panel structure and a method for manufacturing the same are provided.

In order to solve the above technical problems, a first technical solution adopted by the present invention is:

a transparent display panel structure comprises a glass substrate, wherein a metal gate layer, a gate insulating layer, an active layer, an etching barrier layer, a metal source drain layer, a buffer layer, a shading layer, a flat layer and an electrode layer are sequentially stacked on one side surface of the glass substrate;

the etching barrier layer is provided with a first through hole, the first through hole is arranged corresponding to the position of the active layer in the vertical direction of the transparent display panel structure, a metal source drain layer is filled in the first through hole, and the metal source drain layer filled in the first through hole is in contact with the active layer;

a second through hole is formed in the cache layer and is arranged in a position corresponding to the metal source drain layer in the vertical direction of the transparent display panel structure;

the light shielding layer is characterized in that a third through hole is formed in the flat layer, the third through hole and the second through hole are oppositely arranged and communicated, electrode layers are filled in the third through hole and the second through hole, the electrode layers filled in the second through hole are in contact with the metal source drain electrode layer, more than two nano material particles are further arranged between the buffer layer and the flat layer, and more than two nano material particles surround the light shielding layer.

The second technical scheme adopted by the invention is as follows:

a preparation method of a transparent display panel structure comprises the following steps:

step S1, providing a glass substrate, wherein a metal gate layer covers one side of the glass substrate;

step S2, forming a gate insulation layer covering the surface of the metal gate layer;

step S3, forming an active layer covering the surface of the gate insulation layer;

step S4, forming an etching barrier layer and covering the surface of the active layer;

step S5, forming a first via hole in the etching barrier layer, and forming a metal source drain layer in the first via hole;

step S6, forming a buffer layer, and covering the surface of the metal source drain electrode layer;

step S7, forming a second through hole in the buffer layer;

step S8, forming a shading layer and covering the surface of the buffer layer;

step S9 of filling two or more nanomaterial particles around the light-shielding layer;

step S10, forming a flat layer covering the surface of the shading layer;

and step S11, forming a third through hole in the flat layer, and sequentially forming an electrode layer in the second through hole and the third through hole.

The invention has the beneficial effects that:

through set up more than two nano-material particles between buffer layer and planarization layer, more than two nano-material particles surround the light shield layer, nano-material particle and upper and lower stromatolite form the refracting surface of light can change the light direction angle that the side shines into the device, the light that makes OLED light emitting device send can not shine on active layer, metal oxide thin film transistor's electron mobility has been stabilized, make metal oxide thin film transistor evenly supply current and voltage, and along with nano-material particle's joining, can reduce the area of light shield layer, increase the area of transparent region, thereby the holistic transparency degree of display screen has been improved.

Drawings

FIG. 1 is a schematic structural diagram of a transparent display panel structure according to the present invention;

FIG. 2 is a schematic structural diagram of a transparent display panel structure according to the present invention;

FIG. 3 is a partial schematic view of a transparent display panel according to the present invention;

FIG. 4 is a schematic diagram of a partial top view of a transparent display panel structure according to the present invention;

FIG. 5 is a flow chart illustrating steps of a method for fabricating a transparent display panel structure according to the present invention;

FIG. 6 is a process flow diagram of a method for fabricating a transparent display panel structure according to the present invention;

description of reference numerals:

1. a glass substrate; 2. a metal gate layer; 3. a gate insulating layer; 4. an active layer; 5. etching the barrier layer; 6. a metal source drain layer; 7. a buffer layer; 8. a light-shielding layer; 9. a planarization layer; 10. an electrode layer; 11. nanoparticles of a material.

Detailed Description

In order to explain technical contents, achieved objects, and effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.

Referring to fig. 1, a technical solution provided by the present invention:

a transparent display panel structure comprises a glass substrate, wherein a metal gate layer, a gate insulating layer, an active layer, an etching barrier layer, a metal source drain layer, a buffer layer, a shading layer, a flat layer and an electrode layer are sequentially stacked on one side surface of the glass substrate;

the etching barrier layer is provided with a first through hole, the first through hole is arranged corresponding to the position of the active layer in the vertical direction of the transparent display panel structure, a metal source drain layer is filled in the first through hole, and the metal source drain layer filled in the first through hole is in contact with the active layer;

a second through hole is formed in the cache layer and is arranged in a position corresponding to the metal source drain layer in the vertical direction of the transparent display panel structure;

the light shielding layer is characterized in that a third through hole is formed in the flat layer, the third through hole and the second through hole are oppositely arranged and communicated, electrode layers are filled in the third through hole and the second through hole, the electrode layers filled in the second through hole are in contact with the metal source drain electrode layer, more than two nano material particles are further arranged between the buffer layer and the flat layer, and more than two nano material particles surround the light shielding layer.

From the above description, the beneficial effects of the present invention are:

through set up more than two nano-material particles between buffer layer and planarization layer, more than two nano-material particles surround the light shield layer, nano-material particle and upper and lower stromatolite form the refracting surface of light can change the light direction angle that the side shines into the device, the light that makes OLED light emitting device send can not shine on active layer, metal oxide thin film transistor's electron mobility has been stabilized, make metal oxide thin film transistor evenly supply current and voltage, and along with nano-material particle's joining, can reduce the area of light shield layer, increase the area of transparent region, thereby the holistic transparency degree of display screen has been improved.

Further, the shape of the nano material particles is circular, and the diameter range of the nano material particles is

As can be seen from the above description, the diameter range of the nano-material particles is set asThe light emitted by the OLED light-emitting device can not be irradiated on the active layer more accurately, and the electron mobility of the metal oxide thin film transistor is further stabilized.

Furthermore, the number of the first via holes is two, and the two first via holes are symmetrically arranged on the active layer in the horizontal direction of the transparent display panel structure.

Further, the thickness of the light shielding layer ranges from 0.1 μm to 0.3 μm.

Further, the thickness of the active layer ranges from 0.03 μm to 0.06 μm.

Referring to fig. 4, another technical solution provided by the present invention:

a preparation method of a transparent display panel structure comprises the following steps:

step S1, providing a glass substrate, wherein a metal gate layer covers one side of the glass substrate;

step S2, forming a gate insulation layer covering the surface of the metal gate layer;

step S3, forming an active layer covering the surface of the gate insulation layer;

step S4, forming an etching barrier layer and covering the surface of the active layer;

step S5, forming a first via hole in the etching barrier layer, and forming a metal source drain layer in the first via hole;

step S6, forming a buffer layer, and covering the surface of the metal source drain electrode layer;

step S7, forming a second through hole in the buffer layer;

step S8, forming a shading layer and covering the surface of the buffer layer;

step S9 of filling two or more nanomaterial particles around the light-shielding layer;

step S10, forming a flat layer covering the surface of the shading layer;

and step S11, forming a third through hole in the flat layer, and sequentially forming an electrode layer in the second through hole and the third through hole.

From the above description, the beneficial effects of the present invention are:

through filling more than two nano-material particles around the light shield layer, the refraction surface of the nano-material particles and the upper and lower laminated layers forming light can change the light direction angle of the side irradiating into the device, so that the light emitted by the OLED light-emitting device can not irradiate on the active layer, the electron mobility of the metal oxide thin film transistor is stabilized, the metal oxide thin film transistor is enabled to uniformly supply current and voltage, along with the addition of the nano-material particles, the area of the light shield layer can be reduced, the area of a transparent area is increased, and the integral transparency degree of the display screen is improved.

Further, the shape of the nano material particles is circular, and the diameter range of the nano material particles is

As can be seen from the above description, the diameter range of the nano-material particles is set asThe light emitted by the OLED light-emitting device can not be irradiated on the active layer more accurately, and the electron mobility of the metal oxide thin film transistor is further stabilized.

Furthermore, the number of the first via holes is two, and the two first via holes are symmetrically arranged on the active layer in the horizontal direction of the transparent display panel structure.

Further, the thickness of the light shielding layer ranges from 0.1 μm to 0.3 μm.

Further, the thickness of the active layer ranges from 0.03 μm to 0.06 μm.

Referring to fig. 1 to fig. 3, a first embodiment of the present invention is:

referring to fig. 1, a transparent display panel structure includes a glass substrate 1, wherein a metal gate layer 2, a gate insulating layer 3, an active layer 4, an etching barrier layer 5, a metal source drain layer 6, a buffer layer 7, a light shielding layer 8, a flat layer 9, and an electrode layer 10 are sequentially stacked on one side surface of the glass substrate 1;

a first via hole is formed in the etching barrier layer 5, the first via hole is arranged corresponding to the position of the active layer 4 in the vertical direction of the transparent display panel structure, a metal source drain layer 6 is filled in the first via hole, and the metal source drain layer 6 filled in the first via hole is in contact with the active layer 4;

a second through hole is formed in the cache layer, and is arranged in a position corresponding to the metal source drain layer 6 in the vertical direction of the transparent display panel structure;

the light-shielding layer is characterized in that a third through hole is formed in the flat layer 9, the third through hole and the second through hole are oppositely arranged and communicated, electrode layers 10 are filled in the third through hole and the second through hole, the electrode layers 10 filled in the second through hole are in contact with the metal source drain electrode layer 6, more than two nano material particles 11 are further arranged between the buffer layer 7 and the flat layer 9, and the more than two nano material particles 11 surround the light-shielding layer 8.

The shape of the nano material particles 11 is circular, and the diameter range of the nano material particles 11 is

The number of the first through holes is two, and the two first through holes are symmetrically arranged on the active layer 4 in the horizontal direction of the transparent display panel structure.

Depositing a metal gate layer 2 by PVD (physical vapor deposition) on the glass substrate 1, the metal gate layer 2 being made of Al/Mo or Cu/MoTi, wherein the Al thickness in the Al/Mo structure ranges from 0.3 μm to 0.4 μm, preferably 0.33 μm, the Mo thickness ranges from 0.02 μm to 0.08 μm, preferably 0.06 μm, the Cu thickness in the Cu/MoTi structure ranges from 0.4 μm to 0.6 μm, preferably 0.42 μm, the MoTi thickness ranges from 0.2 μm to 0.4 μm, preferably 0.3 μm;

a gate insulating layer 3 is deposited by PECVD (chemical vapor deposition) over the metal gate layer 2 pattern, and the material of the gate insulating layer 3 is not limited to SiO₂、SiN_xEtc. in the range of 0.2 μm to 0.4 μm, preferably 0.3 μm;

sputtering a layer of metal oxide as the active layer 4 by PVD, the selected metal oxide material of the active layer 4 is not limited to high mobility materials such as IGZO, IGZTO, IZO, etc., and the thickness of the active layer 4 is in the range of 0.03 μm to 0.06 μm, preferably 0.04 μm;

depositing an etching barrier layer 5 by PECVD, forming a pattern and a first via hole by exposing, developing and etching the etching barrier layer 5, wherein the material selection of the etching barrier layer 5 is not limited to SiO₂And SiN_xIn the range of 0.15 μm to 0.3 μm, preferably 0.2 μm;

sputtering a layer of metal source drain layer 6 by PVD, wherein the metal source drain layer 6 fills the first via hole and forms Schottky ohmic contact with the lower edge-conductive active layer 4, the layer of metal layer forms a patterned metal source and a patterned metal drain by exposure and etching, the thin film structure of the metal source drain layer 6 is composed of Mo/Al/Mo or Cu/MoTi, wherein the thickness range of Al in the Mo/Al/Mo structure is 0.3 μm-0.4 μm, preferably 0.33 μm, the thickness range of Mo is 0.02 μm-0.08 μm, preferably 0.06 μm, the thickness range of Cu in the Cu/MoTi structure is 0.4 μm-0.6 μm, preferably 0.42 μm, and the thickness range of MoTi is 0.2 μm-0.4 μm, preferably 0.3 μm;

a buffer layer 7 is deposited by PECVD (plasma enhanced chemical vapor deposition), so that the buffer layer 7 plays the roles of isolation and buffering, and is made of SiO₂The thickness of the buffer layer is 0.15-0.3 μm, preferably 0.2 μm, and the buffer layer 7 is exposed and etched to form a hole (i.e., a second via hole);

sputtering a layer of shading layer 8 by PVD, wherein the material of the layer of shading layer 8 adopts a single layer of metal Mo, and the thickness of the metal Mo ranges from 0.1 μm to 0.3 μm, and is preferably 0.2 μm;

coating a layer of nano-material particles 11 by a coater, the nano-material particles 11 not limited to nano-SiN_xGranular, nano SiO₂Particles and nano Al₂O₃The shape of the nano-particles is not limited to circular shape, oval shape, etc., the nano-material particles 11 and the lower buffer layer 7 form a light refraction interface, the nano-material particles 11 surround the periphery of the light shielding layer 8 as shown in FIG. 4, the nano-material particles 11 and the light shielding layer 8 are in the same plane, and the size of the nano-material particles 11 is not limited to the size of the nano-material particles 11Andpreferably, it is

Depositing a flat layer 9 by PECVD, the flat layer 9 and the underlying nano-material particles 11 forming a light refracting surface, the material of the flat layer 9 not being limited to a single layer of SiN_x/SiO₂Or SiN_x/SiO₂The stacked structure of (1), wherein the SiN layer is a single layer_x/SiO₂The thickness range of (a) is 0.15 μm to 0.3 μm, preferably 0.2 μm, the planarization layer 9 is exposed and etched to form a hole (i.e., a third via);

a layer of the electrode layer 10 is sputtered by PVD, wherein the material of the electrode layer 10 is not limited to metal oxides such as ITO and IZO, and the thickness thereof is in the range of 0.06 μm to 0.08 μm, preferably 0.075 μm.

Referring to fig. 2 and 3, when the OLED device emits light, incident light A, B and C emitted by the OLED light emitting device, wherein the incident light B is blocked by the light blocking layer 8 to protect the active layer 4, and due to the addition of the layer of nano material particles 11 between the flat layer 9 and the buffer layer 7, when the incident light C irradiates on the contact surface of the flat layer 9 and the nano material particles 11, the incident light C is refracted to generate first refracted light, and when the refracted light passes through the contact surface of the nano material particles 11 and the buffer layer 7, the first refracted light is refracted to generate second refracted light, and finally after the nano material particles 11 are added, the first refracted light generated by the incident light C does not irradiate on the active layer 4; in a similar way, when the incident light A irradiates on the contact surface of the flat layer 9 and the nano material particles 11, the incident light A is refracted to generate third refracted light, when the third refracted light passes through the contact surface of the nano material particles 11 and the buffer layer 7, the third refracted light is refracted to generate fourth refracted light, and finally after the nano material particles 11 are added, the third refracted light generated by the incident light A does not irradiate on the active layer 4, so that the transparent display of the device is met, the light is not directly irradiated on the active layer 4, and the driving device is protected.

Referring to fig. 4 to fig. 6, a second embodiment of the present invention is:

referring to fig. 5, a method for manufacturing a transparent display panel structure includes the following steps:

step S1, providing a glass substrate 1, and covering a metal gate layer 2 on one side of the glass substrate 1;

step S2, forming a gate insulating layer 3 covering the surface of the metal gate layer 2;

step S3, forming an active layer 4 covering the surface of the gate insulating layer 3;

step S4, forming an etching barrier layer 5 covering the surface of the active layer 4;

step S5, forming a first via hole in the etching stop layer 5, and forming a metal source drain layer 6 in the first via hole;

step S6, forming a buffer layer 7, and covering the surface of the metal source drain layer 6;

step S7, forming a second via hole in the buffer layer 7;

step S8, forming a shading layer 8 covering the surface of the buffer layer 7;

step S9 of filling two or more nanomaterial particles 11 around the light shielding layer 8;

step S10, forming a flat layer 9 covering the surface of the light-shielding layer 8;

step S11, forming a third via hole in the planarization layer 9, and sequentially forming the electrode layer 10 in the second via hole and the third via hole.

The shape of the nano material particles 11 is circular, and the diameter range of the nano material particles 11 is

The number of the first through holes is two, and the two first through holes are symmetrically arranged on the active layer 4 in the horizontal direction of the transparent display panel structure.

The specific embodiment of the preparation method of the transparent display panel structure is as follows:

the method comprises the following steps: depositing a metal gate layer 2 on the glass substrate 1 by PVD (physical vapor deposition), removing the metal gate layer 2 by exposure, development and etching to form a pattern as shown in (a) of FIG. 6, wherein the metal gate layer 2 can be formed by Al/Mo or Cu/MoTi, the Al thickness of the Al/Mo structure is in the range of 0.3 μm to 0.4 μm, preferably 0.33 μm, the Mo thickness is in the range of 0.02 μm to 0.08 μm, preferably 0.06 μm, the Cu thickness of the Cu/MoTi structure is in the range of 0.4 μm to 0.6 μm, preferably 0.42 μm, the MoTi thickness is in the range of 0.2 μm to 0.4 μm, preferably 0.3 μm, and then depositing a gate insulating layer 3 on the gate layer 2 by PECVD (chemical vapor deposition), wherein the material of the gate insulating layer 3 is not changed by the PECVDLimited to SiO₂、SiN_xEtc. in the range of 0.2 μm to 0.4 μm, preferably 0.3 μm;

step two: sputtering a layer of metal oxide as the active layer 4 by PVD on the basis of the first step, wherein the selected metal oxide material of the active layer 4 is not limited to high mobility materials such as IGZO, IGZTO, IZO, etc., the thickness of the active layer 4 is in the range of 0.03 μm to 0.06 μm, preferably 0.04 μm, and the active layer 4 is exposed and etched to form a pattern as shown in fig. 6 (b); then depositing an etching barrier layer 5 by PECVD, and forming patterns and first via holes by exposing, developing and etching the etching barrier layer 5, wherein the material selection of the etching barrier layer 5 is not limited to SiO₂And SiN_xIn the range of 0.15 μm to 0.3 μm, preferably 0.2 μm;

step three: referring to fig. 6 (c), a layer of metal source drain layer 6 is sputtered by PVD on the basis of the second step, and the metal source drain layer 6 fills the first via hole and forms a schottky ohmic contact with the lower edge-conductive active layer 4, the metal layer is exposed and etched to form a patterned metal source and a patterned metal drain, the thin film structure of the metal source drain layer 6 is composed of Mo/Al/Mo or Cu/MoTi, wherein the thickness of Al in the Mo/Al/Mo structure is in the range of 0.3 μm to 0.4 μm, preferably 0.33 μm, the thickness of Mo in the range of 0.02 μm to 0.08 μm, preferably 0.06 μm, the thickness of Cu in the Cu/MoTi structure is in the range of 0.4 μm to 0.6 μm, preferably 0.42 μm, the thickness of MoTi in the range of 0.2 μm to 0.4 μm, preferably 0.3 μm, and then a buffer layer 7 is deposited by PECVD, the buffer layer 7 is made of SiO for isolation and buffer₂The thickness of the buffer layer is 0.15-0.3 μm, preferably 0.2 μm, and the buffer layer 7 is exposed and etched to form a hole (i.e., a second via hole);

step four: sputtering a light shielding layer 8 on the basis of step three by PVD, exposing and etching the light shielding layer 8 to form a pattern as shown in FIG. 6 (d), using a single layer of Mo as the material of the light shielding layer 8, with the thickness ranging from 0.1 μm to 0.3 μm, preferably 0.2 μm, and coating a layer of nano material particles 11 by a coater, wherein the nano material particles 11 are not limited to nano SiN_xGranular, nano SiO₂Particles and nano Al₂O₃The shape of the nano-particles is not limited to circular shape, oval shape, etc., the nano-material particles 11 and the lower buffer layer 7 form a light refraction interface, the nano-material particles 11 surround the periphery of the light shielding layer 8 as shown in FIG. 4, the nano-material particles 11 and the light shielding layer 8 are in the same plane, and the size of the nano-material particles 11 is not limited to the size of the nano-material particles 11Andpreferably, it is

Depositing a flat layer 9 by PECVD on the above substrate, wherein the flat layer 9 and the nano-material particles 11 below form a light refraction surface, and the material of the flat layer 9 is not limited to single layer of SiN_x/SiO₂Or SiN_x/SiO₂The stacked structure of (1), wherein the SiN layer is a single layer_x/SiO₂Is in the range of 0.15 μm to 0.3 μm, preferably 0.2 μm, the planarization layer 9 is exposed and etched to form a hole (i.e., a third via hole), and finally a layer of the electrode layer 10 is sputtered by PVD, wherein the material of the electrode layer 10 is not limited to metal oxides such as ITO and IZO, and the thickness is in the range of 0.06 μm to 0.08 μm, preferably 0.075 μm.

In summary, according to the transparent display panel structure and the manufacturing method thereof provided by the invention, the at least two nano material particles are arranged between the buffer layer and the flat layer, the at least two nano material particles surround the light shielding layer, and the nano material particles and the upper and lower stacked layers form a light refraction surface which can change the direction angle of light rays irradiated into the device from the side edge, so that light emitted by the OLED light emitting device can not be irradiated on the active layer, the electron mobility of the metal oxide thin film transistor is stabilized, the metal oxide thin film transistor uniformly supplies current and voltage, and with the addition of the nano material particles, the area of the light shielding layer can be reduced, the area of the transparent area is increased, and the overall transparency degree of the display screen is improved.

The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes made by using the contents of the present specification and the drawings, or applied directly or indirectly to the related technical fields, are included in the scope of the present invention.