阅读说明：本技术 铁电随机存取存储器感测方案 (Ferroelectric random access memory sensing scheme ) 是由 艾伦·德维尔比斯 乔纳森·拉赫曼 于 2019-02-15 设计创作，主要内容包括：提供了半导体存储器设备及操作其的方法。操作方法可以包括以下步骤：选择铁电存储器单元用于读操作；耦合第一脉冲信号以询问选定铁电存储器单元,选定铁电存储器单元响应于第一脉冲信号而向位线输出存储器信号；经由位线将存储器信号耦合到感测放大器的第一输入端；使感测放大器与选定铁电存储器单元电气地隔离；以及在感测放大器与选定铁电存储器单元电气地隔离之后启用感测放大器用于感测。还公开了其它实施例。(A semiconductor memory device and a method of operating the same are provided. The method of operation may include the steps of: selecting a ferroelectric memory cell for a read operation; coupling the first pulse signal to interrogate a selected ferroelectric memory cell, the selected ferroelectric memory cell outputting a memory signal to the bit line in response to the first pulse signal; coupling a memory signal to a first input of a sense amplifier via a bit line; electrically isolating the sense amplifier from the selected ferroelectric memory cell; and enabling the sense amplifier for sensing after the sense amplifier is electrically isolated from the selected ferroelectric memory cell. Other embodiments are also disclosed.)