阅读说明：本技术 一种通过嫁接制备单晶金属的方法 (Method for preparing single crystal metal by grafting ) 是由 刘开辉 徐小志 俞大鹏 王恩哥 于 2019-03-07 设计创作，主要内容包括：本发明提出一种通过嫁接制备单晶金属的方法,以已有的金属单晶A为子晶,将其放置在需要单晶化的金属B上,通过退火工艺处理,嫁接得到与子晶晶面指数相同的大尺寸单晶金属B。本发明提出的方法,解决了单晶金属难以制备的问题,通过退火工艺处理,利用小尺寸(0.05～1cm<Sup>2</Sup>)的单晶金属制得了大面积(1～700cm<Sup>2</Sup>)的单晶金属。(The invention provides a method for preparing single crystal metal by grafting, which comprises the steps of taking the existing metal single crystal A as a sub-crystal, placing the sub-crystal on the metal B needing single crystallization, and carrying out annealing process treatment to obtain the large-size single crystal metal B with the same crystal surface index as that of the sub-crystal. The method provided by the invention solves the problem that the single crystal metal is difficult to prepare, and the single crystal metal is processed by an annealing process and has a small size (0.05-1 cm) 2 ) The single crystal metal is prepared into a large area (1-700 cm) 2 ) The single crystal metal of (1).)

1. A method for preparing a single crystal metal by grafting, comprising the steps of:

providing a first monocrystalline metal and a first polycrystalline metal;

placing the first monocrystalline metal over the first polycrystalline metal;

and annealing, and converting the first polycrystalline metal into a second single-crystal metal with the same crystal face index as the first single-crystal metal by taking the first single-crystal metal as a sub-crystal.

2. Method according to claim 1, characterized in that it comprises the following steps:

firstly, using a first single crystal metal with any crystal face as a grafted crystal;

(II) placing a first single crystal metal on a first polycrystalline metal needing single crystallization;

thirdly, placing the first polycrystalline metal in a tube furnace, introducing Ar with the flow rate of more than 300sccm, and then starting to heat up, wherein the heating process lasts for 1-100 min;

(IV) when the temperature rises to 900-1500 ℃, introducing H₂Gas, H₂The flow is 10-500 sccm, the Ar flow is kept unchanged, and the annealing process is carried out, wherein the annealing duration time is 10-500 min;

(V) after the annealing is finished, the heating power supply is closed, and Ar and H are added₂Naturally cooling to room temperature for protecting gas, and converting the first polycrystalline metal into second single crystal metal with the same crystal face as the first single crystal metal, i.e. grafting to prepare the second single crystal metalAnd (6) carrying out the process.

3. The method of claim 1 or 2, wherein the first single crystal metal includes but is not limited to single crystal metals of face centered cubic, body centered cubic, hexagonal systems.

4. The method of claim 1 or 2, wherein the crystal plane orientation of the first single crystalline metal includes, but is not limited to, common (111), (110), (100), and uncommon (211), (410), (311).

5. The method of claim 1 or 2, wherein the first monocrystalline metal is naturally disposed on the first polycrystalline metal without any treatment.

6. The method of claim 1 or 2, wherein the second single-crystal metal is produced in a size of 40cm by 20cm and above.

7. The method of claim 1 or 2, wherein the second single crystal metal includes, but is not limited to, copper, aluminum, gold, silver, platinum, palladium, nickel.

8. The method of claim 1 or 2, wherein the first single-crystal metal, the first polycrystalline metal, and the second single-crystal metal are each a foil; preferably, the area of the first single crystalline metal is 1% to 50% of the area of the first polycrystalline metal.

9. A single crystal metal, characterized in that it is a second single crystal metal prepared by the method of any one of claims 1-8, including but not limited to copper, aluminum, gold, silver, platinum, palladium, nickel.

10. The single crystal metal of claim 9, wherein the second single crystal metal has a size of 40cm by 20cm and above.

Technical Field

The invention relates to a method for preparing single crystal metal, in particular to a method for preparing single crystal metal by grafting, which takes the existing metal single crystal as a sub-crystal and obtains large-size single crystal metal with the same crystal face index as the sub-crystal by grafting.

Background

The metal elements are the main body of chemical elements and are the main material resources of production and life of people. Tungsten, for example, is used primarily for manufacturing alloy steels; pure tungsten is mainly used for manufacturing tungsten wires in bulbs, and is also used for electronic instruments, optical instruments and the like. Chromium is a silvery white metal, has extremely high hardness and corrosion resistance, and is used for electroplating and manufacturing special steel. At present, stainless steel and chromium-plated products are widely applied in the fields of medical instruments, drinking utensils, tableware and the like. Manganese steel is hard and tough, and is an ideal material for manufacturing rails, bearings and armor plates. Lithium is the lightest metal element with the greatest specific heat. Lithium is not only used to manufacture ultra-light alloys and lithium batteries, but is also an important material for sophisticated technologies.

At present, most of metals existing in nature are polycrystalline copper, and have the defects of small crystal grains, more crystal boundaries, high defect density and the like, the defects greatly reduce the electric conduction performance, the heat conduction performance, the mechanical performance and the like of the metals, so that the superior performance of the metals cannot be fully exerted, and the industrial application is greatly reduced.

Disclosure of Invention

The invention provides a method for preparing single crystal metal by grafting, which comprises the following steps:

providing a first monocrystalline metal and a first polycrystalline metal;

placing the first monocrystalline metal over the first polycrystalline metal;

and annealing, and converting the first polycrystalline metal into a second single-crystal metal with the same crystal face index as the first single-crystal metal by taking the first single-crystal metal as a sub-crystal.

Preferably, the method comprises the steps of:

firstly, using a first single crystal metal with any crystal face as a grafted crystal;

(II) placing a first single crystal metal on a first polycrystalline metal needing single crystallization;

thirdly, placing the first polycrystalline metal in a tube furnace, introducing Ar with the flow rate of more than 300sccm, and then starting to heat up, wherein the heating process lasts for 1-100 min;

(IV) when the temperature rises to 900-1500 ℃, introducing H₂Gas, H₂The flow is 10-500 sccm, the Ar flow is kept unchanged, and the annealing process is carried out, wherein the annealing duration time is 10-500 min;

(V) after the annealing is finished, the heating power supply is closed,with Ar and H₂Naturally cooling to room temperature for protecting gas, and converting the first polycrystalline metal into second single crystal metal with the same crystal face as the first single crystal metal, namely completing the process of preparing the second single crystal metal by grafting.

Preferably, the first single-crystal metal includes, but is not limited to, single-crystal metals of face-centered cubic system, body-centered cubic system, and hexagonal system.

Preferably, the crystal plane orientation of the first single crystalline metal includes, but is not limited to, common (111), (110), (100), and uncommon (211), (410), (311).

Preferably, the first monocrystalline metal is naturally disposed on the first polycrystalline metal without any treatment.

Preferably, the second monocrystalline metal is produced in a size of 40cm x 20cm and above.

Preferably, the second single crystal metal includes, but is not limited to, copper, aluminum, gold, silver, platinum, palladium, nickel.

Preferably, the first single-crystal metal, the first polycrystalline metal, and the second single-crystal metal are each a foil.

Preferably, the area of the first single crystalline metal is 1% to 50% of the area of the first polycrystalline metal.

The present invention also provides a single crystalline metal that is a second single crystalline metal prepared by the above method, including but not limited to copper, aluminum, gold, silver, platinum, palladium, nickel.

Preferably, the size of the second single-crystal metal is 40cm x 20cm and above.

The invention uses the existing single crystal copper foil as the sub-crystal, and the single crystal copper foil is placed on the metal B needing single crystallization, and the large-size single crystal metal B with the same crystal surface index as the sub-crystal is obtained by grafting through unique annealing process treatment. The method provided by the invention solves the problem that the single crystal metal is difficult to prepare, and the single crystal metal is processed by an annealing process and has a small size (0.05-1 cm)²) The single crystal metal is prepared into a large area (1-700 cm)²) The single crystal metal of (1).

The invention has the advantages that:

1. the present invention is a method for preparing single crystal metals by grafting, including but not limited to single crystal copper;

2. the method selects the commercially available polycrystalline metal as the raw material, and can prepare the large-size single crystal metal without carrying out complex pretreatment on the metal, thereby greatly reducing the preparation cost;

3. the invention provides a method for preparing single crystal metal by grafting for the first time, and the prepared single crystal metal has large size, excellent performance and good application prospect.

4. The method is simple and effective, and is beneficial to practical application and industrial production of large-size single crystal metal

Drawings

FIG. 1 is a schematic diagram of a process for preparing a single crystal metal B by grafting using a conventional single crystal metal A as a seed crystal.

FIG. 2 shows the results of Electron Back Scattering Diffraction (EBSD) of Au (111), which is a single-crystal metal A prepared by grafting Cu (111) as an example.

Detailed Description

The present invention will be described in further detail with reference to specific examples, but the present invention is not limited to the examples.

In the following embodiments, the methods are conventional methods unless otherwise specified; the starting materials are commercially available from the open literature unless otherwise specified.