阅读说明：本技术 显示面板及其制备方法 (Display panel and preparation method thereof ) 是由 张鑫 冼志科 李吉 于 2020-06-08 设计创作，主要内容包括：本申请提供一种显示面板及其制备方法,显示面板包括基板、薄膜晶体管层、反射层和迷你发光二极管,薄膜晶体管层设置于基板上,反射层设置于薄膜晶体管层上,反射层由两种不同折射率的材料交替层叠设置形成,反射层具有通孔,通孔暴露薄膜晶体管层,迷你发光二极管设置于通孔中以电连接薄膜晶体管层。在本申请中,反射层采用两种不同折射率的材料形成,将反射层与迷你发光二极管结合,提高了光的利用率,并降低了功耗,进而提高了显示面板的性能。(The application provides a display panel and a preparation method thereof, the display panel comprises a substrate, a thin film transistor layer, a reflecting layer and mini light-emitting diodes, the thin film transistor layer is arranged on the substrate, the reflecting layer is arranged on the thin film transistor layer and formed by alternately stacking two materials with different refractive indexes, the reflecting layer is provided with a through hole, the through hole exposes the thin film transistor layer, and the mini light-emitting diodes are arranged in the through hole to be electrically connected with the thin film transistor layer. In this application, the reflection stratum adopts the material of two kinds of different refracting indexes to form, combines reflection stratum and mini emitting diode, has improved the utilization ratio of light to the consumption has been reduced, and then has improved display panel's performance.)

1. A display panel, comprising:

a substrate;

a thin-film transistor layer disposed on the substrate;

the reflecting layer is formed by sequentially and alternately laminating a plurality of first sub-layers and a plurality of second sub-layers on the thin film transistor layer, the first sub-layers are made of a first refractive index material, the second sub-layers are made of a second refractive index material, the reflecting layer is provided with a through hole, and the through hole exposes the thin film transistor layer; and

and the mini light-emitting diode is arranged in the through hole and electrically connected with the thin film transistor layer.

2. The display panel of claim 1, wherein the first refractive index material has a refractive index greater than the refractive index of the second refractive index material.

3. The display panel of claim 1, wherein a thickness of the first plurality of layers is from 55 nm to 65 nm and a thickness of the second plurality of layers is from 65 nm to 85 nm.

4. The display panel of claim 1, wherein the first refractive index material has a refractive index of 1.7-2.2 and the second refractive index material has a refractive index of 1.35-1.55.

5. The display panel of claim 1, wherein the first refractive index material comprises SiN_x、TiO₂ZnS and Al₂O₃One or more combinations of the above, and the second refractive index material comprises SiO₂And MgF₂One or a combination of both.

6. A method for manufacturing a display panel, comprising:

providing a substrate;

forming a thin film transistor layer on the substrate;

sequentially and alternately laminating a plurality of first sub-layers and a plurality of second sub-layers on the thin film transistor layer to form a reflecting layer, wherein the plurality of first sub-layers are made of a first refractive index material, and the plurality of second sub-layers are made of a second refractive index material;

etching the reflecting layer to form a through hole, wherein the through hole exposes the thin film transistor layer;

and arranging a mini light-emitting diode in the through hole, wherein the mini light-emitting diode is electrically connected with the thin film transistor layer.

7. The method of manufacturing a display panel according to claim 6, wherein the refractive index of the first refractive index material is larger than the refractive index of the second refractive index material.

8. The method of manufacturing a display panel according to claim 6, wherein the first plurality of layers have a thickness of 55 nm to 65 nm, and the second plurality of layers have a thickness of 65 nm to 85 nm.

9. The method of manufacturing a display panel according to claim 6, wherein the first refractive index material has a refractive index of 1.7 to 2.2, and the second refractive index material has a refractive index of 1.35 to 1.55.

10. The method of claim 6, wherein the first refractive index material comprises SiN_x、TiO₂ZnS and Al₂O₃One or more combinations of the above, and the second refractive index material comprises SiO₂And MgF₂One or a combination of both.

Technical Field

The application and the display field, in particular to a display panel and a preparation method thereof.

Background

In the prior art, as a backlight of a liquid crystal display, in order to improve the light utilization rate of a light emitting diode, a reflective film is generally attached to a light emitting diode substrate, so that light emitted by the light emitting diode and light reflected by a diffusion film above the light emitting diode are reflected into the liquid crystal display again, but the thickness of the attached reflective film is relatively thick, so that the light utilization rate of the light emitting diode is reduced, the cost is increased, and the performance of a display panel is affected; and the preparation process of the reflecting film is incompatible with the conventional transistor process, so that the cost is increased, and the production period of the product is long.

Disclosure of Invention

The application provides a display panel and a preparation method thereof, which are used for improving the performance of the display panel.

The application provides a display panel, including:

a substrate;

a thin-film transistor layer disposed on the substrate;

the reflecting layer is formed by sequentially and alternately laminating a plurality of first sub-layers and a plurality of second sub-layers on the thin film transistor layer, the first sub-layers are made of a first refractive index material, the second sub-layers are made of a second refractive index material, the reflecting layer is provided with a through hole, and the through hole exposes the thin film transistor layer; and

and the mini light-emitting diode is arranged in the through hole and electrically connected with the thin film transistor layer.

In the display panel provided by the present application, the refractive index of the first refractive index material is greater than the refractive index of the second refractive index material.

In the display panel provided by the application, the thickness of a plurality of first layers is 55 nanometers to 65 nanometers, and the thickness of a plurality of second layers is 65 nanometers to 85 nanometers.

In the display panel provided by the application, the refractive index of the first refractive index material is 1.7-2.2, and the refractive index of the second refractive index material is 1.35-1.55.

In the display panel provided by the present application, the first refractive index material comprises SiN_x、TiO₂ZnS and Al₂O₃One or more combinations of the above, and the second refractive index material comprises SiO₂And MgF₂One or a combination of both.

The application provides a preparation method of a display panel, which comprises the following steps:

providing a substrate;

forming a thin film transistor layer on the substrate;

sequentially and alternately laminating a plurality of first sub-layers and a plurality of second sub-layers on the thin film transistor layer to form a reflecting layer, wherein the first sub-layers are formed by a first refractive index material, and the second sub-layers are formed by a second refractive index material;

etching the reflecting layer to form a through hole, wherein the through hole exposes the thin film transistor layer;

and arranging a mini light-emitting diode in the through hole, wherein the mini light-emitting diode is electrically connected with the thin film transistor layer.

In the method for manufacturing the display panel, the refractive index of the first refractive index material is greater than the refractive index of the second refractive index material.

In the preparation method of the display panel, the thickness of the plurality of first layers is 55 nm-65 nm, and the thickness of the plurality of second layers is 65 nm-85 nm.

In the method for manufacturing the display panel, the refractive index of the first refractive index material is 1.7-2.2, and the refractive index of the second refractive index material is 1.35-1.55.

In the method for manufacturing a display panel provided by the present application, the first refractive index material includes SiN_x、TiO₂ZnS and Al₂O₃One or more combinations of the above, and the second refractive index material comprises SiO₂And MgF₂One or a combination of both.

The application provides a display panel and a preparation method thereof, the display panel comprises a substrate, a thin film transistor layer, a reflecting layer and mini light-emitting diodes, the thin film transistor layer is arranged on the substrate, the reflecting layer is arranged on the thin film transistor layer and formed by alternately stacking two materials with different refractive indexes, the reflecting layer is provided with a through hole, the through hole exposes the thin film transistor layer, and the mini light-emitting diodes are arranged in the through hole and electrically connected with the thin film transistor layer. In this application, the reflector layer adopts the material of two kinds of different refracting indexes to stack the setting in turn and form, combines reflector layer and mini emitting diode, has improved the luminance that mini emitting diode is shaded, and then has improved the utilization ratio of light to reduce power consumption, and then improved display panel's performance.

Drawings

In order to more clearly illustrate the technical solutions in the present application, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a structural cross-sectional view of a display panel provided in the present application.

FIG. 2 is a cross-sectional view of a thin film transistor according to the present invention

Fig. 3 is a structural sectional view of a reflective layer provided in the present application.

Fig. 4 is a schematic diagram of a reflectivity curve of the reflective layer provided in the present application.

Fig. 5 is a cross-sectional flow diagram of a method for manufacturing a display panel provided in the present application.

Detailed Description

The technical solution in the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It should be apparent that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any inventive step based on the embodiments in the present application, are within the scope of protection of the present application.

The present application provides a display panel. Referring to fig. 1, fig. 1 is a cross-sectional view of a display panel provided in the present application. The display panel 10 includes a substrate 100, a thin film transistor layer 200, a reflective layer 300, and a mini light emitting diode 400.

The substrate 100 may be a glass substrate.

Referring to fig. 2, fig. 2 is a cross-sectional view of a thin film transistor provided in the present application. The thin-film transistor layer 200 is disposed on the substrate 100. The thin-film transistor layer 200 covers the substrate 100. The thin-film transistor layer 200 includes a thin-film transistor 210. The thin film transistor 210 includes a gate electrode 201, a first protective layer 202, a gate insulating layer 203, an active layer 204, a source electrode 205, a drain electrode 206, and a second protective layer 207. The first protective layer 202 covers the gate 201. The material of the gate 201 includes one or a combination of Mo, Al, Ti, In and Ga. The gate insulating layer 203 is disposed on the first protection layer 202. The material of the gate insulating layer 203 includes Al₂O₃SiOx and SiN_XOne or a combination of several of them. The active layer 204 is disposed on the gate insulating layer 203. The material of the active layer 204 includes amorphous silicon. The source 205 is disposed at one end of the gate insulating layer 203 and one end of the active layer 204. The drain electrode 206 is disposed at the other end of the gate insulating layer 203 and the other end of the active layer 204. The source 205 and the drain 206 are insulated from each other. The second protective layer 207 covers the source 205, the drain 206, and the gate insulating layer 203. The second protection layer 207 is used to protect the structure of the thin-film transistor layer 200 and avoid the influence of other structures or water and oxygen on the thin-film transistor layer 200. The thin film transistor 210 includes other structures besides the structure shown in fig. 2, which are not listed here.

Referring to fig. 3, fig. 3 is a cross-sectional view of a reflective layer according to the present application. A reflective layer 300 is disposed on the thin-film transistor layer 200. The reflective layer 300 covers the thin-film transistor layer 200. The reflective layer 300 is a distributed bragg reflector. The distributed bragg reflector is a reflector that reflects at an interface when light passes through different media. The reflective layer 300 is formed by alternately stacking two materials with different refractive indexes in sequence to form a plurality of first sub-layers 301 and a plurality of second sub-layers 302. In the present embodiment, the reflective layer 300 has 8 layers, that is, two materials having different refractive indexes are alternately stacked to form a total of 8 layers. The same applies to the subsequent 6-layer, 10-layer and 16-layer layers, and specifically, a first layer 301, a second layer 302, a third layer 303, a fourth layer 304, a fifth layer 305, a sixth layer 306, a seventh layer 307 and an eighth layer 308 are sequentially stacked on the thin-film transistor layer 200. The first, third, fifth, and seventh sublayers 301, 303, 305, and 307 are formed of a first refractive index material. The second segment 302, the fourth segment 304, the sixth segment 306, and the eighth segment 308 are formed of a second refractive index material. The first refractive index material has a refractive index greater than the refractive index of the second refractive index material. The reflective layer 300 has a through hole 390. Through-hole 390 exposes thin-film-transistor layer 200.

In another embodiment, the first refractive index material has a refractive index of 1.7-2.2. The second refractive index material has a refractive index of 1.35 to 1.55.

In another embodiment, the first refractive index material comprises SiN_x、TiO₂ZnS and Al₂O₃One or a combination of several of them. The second refractive index material comprises SiO₂And MgF₂One or a combination of both.

In another embodiment, the thickness of the first plurality of layers is from 55 nm to 65 nm. The thickness of a number of the second sublayers is 65 nanometers to 85 nanometers.

Referring to fig. 4, fig. 4 is a schematic view illustrating a reflectivity curve of a reflective layer according to the present application. The reflection stratum is because of being formed by two kinds of different refractive index material are range upon range of in turn, when light passed through reflection stratum 300, will reflect light, because the light that each layer reflection was come back carries out constructive interference because of the change of phase angle, then combines together each other, obtains strong reverberation, has improved mini emitting diode's light utilization ratio to reduce the consumption of power, and then improved display panel's performance. When the number of the layered layers of the reflecting layer 300 is different, the reflecting layer 300 has different reflectivities to light, and the 6-layered reflecting layer structure has the reflectivities of 75% and more than 75% at the wavelength of 440 nm-490 nm; the reflectivity of 8 layered reflecting layer structures at the wavelength of 440 nm-490 nm reaches 85% and more than 85%; the reflectivity of 10 layered reflecting layer structures at the wavelength of 440 nm-490 nm reaches 90% and above 90%; the 16-layer layered reflecting layer structure has reflectivity of 97% and over 97% at wavelength of 440 nm-490 nm.

In this application, the reflection layer is high to blue light reflectivity, can regard as the speculum of blue light, combines with quantum dot to form the quantum dot display of high colour gamut.

The through hole 390 is provided with a mini light emitting diode 400 to electrically connect the thin film transistor layer 200.

The mini led 400 may be a blue mini led. The bottom of the mini led 400 is provided with a metal paste layer 500. The mini led 400 with the metal paste layer 500 is disposed in the through hole 390. The material of the metal paste layer 500 includes one or a combination of several of Sn, In, Bi, Cu, Al, and Mo. In this embodiment, the metal paste layer 500 is a tin paste layer.

In this application, set up mini emitting diode on the metal paste layer, because of the metal paste layer has the characteristic of mobility and adhesion, later solidification metal paste layer, and then be fixed in mini emitting diode on the metal paste layer, and then will mini emitting diode is fixed in on the thin film transistor layer, avoid mini emitting diode to lose at preparation or the in-process that uses, influenced display panel's performance.

The application provides a display panel, in the display panel, combine the reflector layer with the mini emitting diode, because the structure of reflector layer sets to by two kinds of different refractive index material range upon range of formation in turn, when light passes through the reflector layer, because the light that each layer reflects back carries out constructive interference because of the change of phase angle, then combine together each other, obtain strong reverberation, improve the reflectivity of light, and then improved mini emitting diode's light utilization ratio, reduced power consumption, and then improved display panel's performance, and reduced display panel's manufacturing cost, and, the reflector layer is high to blue light reflectivity, can regard as the speculum of blue light, combine with the quantum dot display that forms high colour gamut,

referring to fig. 5, fig. 5 is a cross-sectional flow diagram of a method for manufacturing a display panel according to the present application. The present application further provides a method for manufacturing a display panel 10, including:

11. thin-film-transistor layer 200 is formed on substrate 100.

A substrate 100 is provided. The substrate 100 may be a glass substrate. Thin-film-transistor layer 200 is formed on substrate 100. The thin film transistor layer 200 includes a thin film transistor 210, and the thin film transistor 210 includes a gate 201, a first protective layer 202, a gate insulating layer 203, an active layer 204, a source electrode 205, a drain electrode 206, and a second protective layer 207. The first protective layer 202 covers the gate 201. The material of the gate 201 includes one or a combination of Mo, Al, Ti, In and Ga. The gate insulating layer 203 is disposed on the first protection layer 202. The material of the gate insulating layer 203 includes Al₂O₃SiOx and SiN_XOne or a combination of several of them. The active layer 204 is disposed on the gate insulating layer 203. The material of the active layer 204 includes amorphous silicon. The source 205 is disposed at one end of the gate insulating layer 203 and one end of the active layer 204. The drain electrode 206 is disposed at the other end of the gate insulating layer 203 and the other end of the active layer 204. The source 205 and the drain 206 are insulated from each other. The second protective layer 207 covers the source 205, the drain 206, and the gate insulating layer 203. The second protection layer 207 is used to protect the structure of the thin-film transistor layer 200 and avoid the influence of other structures or water and oxygen on the thin-film transistor layer 200. The thin film transistor 210 includes other structures besides the structure shown in fig. 2, which are not listed here.

12. A plurality of first sub-layers 301 and a plurality of second sub-layers 302 are alternately stacked on the thin-film transistor layer 200 in sequence to form a reflective layer 300.

A first refractive index material and a second refractive index material are alternately deposited in layers on thin-film-transistor layer 200 to form a multilayer, layered reflective layer 300. The number of the reflective layers 300 is not limited. In this embodiment, the reflective layer 300 is layered into 8 layers. That is, a total of 8 layered reflective layers are formed by alternately laminating two materials having different refractive indices. The reflective layer 300 includes a first segment 301, a second segment 302, a third segment 303, a fourth segment 304, a fifth segment 305, a sixth segment 306, a seventh segment 307, and an eighth segment 308. The first segment 301, the third segment 303, the fifth segment 305, and the seventh segment 307 are formed of the first refractive index material. The first, third, fifth and seventh sublayers 301, 303, 305, 307 have a thickness of 55-65 nm. The second segment 302, the fourth segment 304, the sixth segment 306, and the eighth segment 308 are formed of a second refractive index material. The second sublayer 302, the fourth sublayer 304, the sixth sublayer 306, and the eighth sublayer 308 have a thickness of 65 nanometers to 85 nanometers. The first refractive index material has a refractive index greater than the refractive index of the first refractive index material.

In another embodiment, the first refractive index material has a refractive index of 1.7-2.2. The second refractive index material has a refractive index of 1.35 to 1.55.

In another embodiment, the first refractive index material comprises SiN_x、TiO₂ZnS and Al₂O₃One or a combination of several of them. The second refractive index material comprises SiO₂And MgF₂One or a combination of both.

13. The reflective layer 300 is etched to form a via 390.

The reflective layer is dry etched or wet etched to form a via hole 390. The etching method is not limited, and the corresponding etching method can be adopted according to specific requirements. The through hole 390 penetrates the reflective layer 300 to expose the thin-film transistor layer 200.

14. The mini led 400 is disposed in the through hole 390.

The mini led 400 may be a blue led. The mini led 400 is electrically connected to the thin film transistor layer 200. The bottom of the mini led 400 is provided with a metal paste layer 500. The mini led 400 with the metal paste layer 500 is disposed in the through hole 390. The material of the metal paste layer 500 includes one or a combination of several of Sn, In, Bi, Cu, Al, and Mo. In this embodiment, the metal paste layer 500 is a tin paste layer.

The application provides a display panel and a preparation method thereof, in the preparation method of the display panel, the structure of the reflecting layer adopts two different refractive index materials to be sequentially and alternately stacked on the thin film transistor layer.

The foregoing provides a detailed description of embodiments of the present application, and the principles and embodiments of the present application have been described herein using specific examples, which are presented solely to aid in the understanding of the present application. Meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.