阅读说明：本技术 磁隧道结参考层、磁隧道结以及磁随机存储器 (Magnetic tunnel junction reference layer, magnetic tunnel junction and magnetic random access memory ) 是由 赵巍胜 程厚义 曹凯华 王戈飞 于 2020-04-26 设计创作，主要内容包括：本发明提供一种磁隧道结参考层、磁隧道结以及磁随机存储器,该磁隧道结参考层包括：反铁磁结构层,包括多个堆叠的金属磁性层单元,每个金属磁性层单元包括一间隔层和位于所述间隔层一侧表面上的一磁性层,本发明通过金属的间隔层与磁性层多层堆叠形成合成反铁磁结构来增加垂直磁隧道结参考层的热稳定性,而能够降低膜层的设计复杂性、降低成本,在不需要氧化物的情况下形成了具有强垂直磁各向异性、高热稳定性、膜层简单、成本较低的多层膜结构,能够促进磁存储器的大规模使用。(The invention provides a magnetic tunnel junction reference layer, a magnetic tunnel junction and a magnetic random access memory, wherein the magnetic tunnel junction reference layer comprises: the invention relates to an antiferromagnetic structure layer which comprises a plurality of stacked metal magnetic layer units, wherein each metal magnetic layer unit comprises a spacing layer and a magnetic layer positioned on one side surface of the spacing layer.)

1. A magnetic tunnel junction reference layer, comprising:

the antiferromagnetic structure layer comprises a plurality of stacked metal magnetic layer units, and each metal magnetic layer unit comprises a spacing layer and a magnetic layer positioned on one side surface of the spacing layer.

2. The magnetic tunnel junction reference layer of claim 1 further comprising:

a first oxide barrier layer on a side surface of the antiferromagnetic structure layer;

a second oxide barrier layer on a side surface of the antiferromagnetic structure layer facing away from the first oxide barrier layer; and

and the first buffer layer is positioned on the surface of one side, away from the antiferromagnetic structure layer, of the second oxide barrier layer.

3. The magnetic tunnel junction reference layer of claim 2 further comprising:

a second buffer layer on a surface of the first buffer layer on a side facing away from the second oxide barrier layer; and

and the substrate is positioned on the surface of one side, away from the first buffer layer, of the second buffer layer.

4. The magnetic tunnel junction reference layer of claim 2 further comprising:

a protective layer on a side surface of the first oxide barrier layer facing away from the antiferromagnetic structure layer.

5. The magnetic tunnel junction reference layer of claim 2 wherein the first buffer layer and/or the spacer layer comprises: at least one of tantalum, tungsten, molybdenum, chromium, niobium and ruthenium.

6. The magnetic tunnel junction reference layer of claim 1 wherein the magnetic layer comprises at least one of CoFeB, CoFe, FeB, Co, Fe, and Heusler alloys.

7. The magnetic tunnel junction reference layer of claim 2, wherein the first oxide barrier layer and the second oxide barrier layer comprise: at least one of magnesium oxide, aluminum oxide, magnesium aluminum oxide, hafnium oxide, and tantalum oxide.

8. The magnetic tunnel junction reference layer of claim 1 wherein the spacer layer has a thickness in the range of 0.1-1 nm.

9. A magnetic tunnel junction, comprising: the magnetic tunnel junction reference layer of any of claims 1-8.

10. A magnetic random access memory comprising a plurality of memory cells, each memory cell comprising a magnetic tunnel junction according to claim 9.

11. A spin valve, comprising: the magnetic memory comprises a first magnetic layer, a nonmagnetic intermediate layer, a second magnetic layer and an antiferromagnetic structure layer, wherein the magnetic memory comprises a plurality of stacked metal magnetic layer units, and each metal magnetic layer unit comprises a spacing layer and a magnetic layer positioned on one side surface of the spacing layer.

12. A racetrack memory, comprising:

the antiferromagnetic structure layer comprises a plurality of stacked metal magnetic layer units, and each metal magnetic layer unit comprises a spacing layer and a magnetic layer positioned on one side surface of the spacing layer;

and the heavy metal layer is positioned on one side surface of the anti-ferromagnetic structure layer.

13. A sgrming sub-device, comprising: the antiferromagnetic structure layer comprises a plurality of stacked metal magnetic layer units, and each metal magnetic layer unit comprises a spacing layer and a magnetic layer positioned on one side surface of the spacing layer.