阅读说明：本技术 一种显示面板的制作方法 (Manufacturing method of display panel ) 是由 邓永 于 2020-05-13 设计创作，主要内容包括：本发明提供一种显示面板的制作方法,该方法包括：在衬底基板上依次制作半导体层、栅绝缘层、第一金属层以及光阻部；所述半导体层的材料为金属氧化物；通过所述光阻部对所述第一金属层和所述栅绝缘层进行图案化处理,以形成栅极并且将未被所述光阻部覆盖的半导体层裸露在外；对所述裸露在外的半导体层进行导体化处理,形成连接部以及在对所述裸露在外的半导体层进行导体化处理的同时使所述光阻部的外表面硬化,得到基底；采用预设气体对所述基底进行处理,以将硬化的光阻部去除；所述预设气体为含氟元素的特殊气体；将剩余的光阻部去除,以将栅极裸露在外。本发明能够在去除硬化的光阻层的同时提高半导体层的导电性能。(The invention provides a manufacturing method of a display panel, which comprises the following steps: manufacturing a semiconductor layer, a gate insulating layer, a first metal layer and a light resistance part on a substrate in sequence; the semiconductor layer is made of metal oxide; patterning the first metal layer and the gate insulating layer through the photoresist portion to form a gate electrode and expose the semiconductor layer not covered by the photoresist portion; conducting a conductor treatment on the semiconductor layer exposed outside to form a connecting part, and hardening the outer surface of the photoresistance part while conducting the conductor treatment on the semiconductor layer exposed outside to obtain a substrate; processing the substrate by adopting preset gas to remove the hardened photoresistance part; the preset gas is special gas containing fluorine element; the remaining photoresist is removed to expose the gate. The invention can remove the hardened photoresist layer and improve the conductivity of the semiconductor layer.)

1. A method for manufacturing a display panel is characterized by comprising the following steps:

manufacturing a semiconductor layer, a gate insulating layer, a first metal layer and a light resistance part on a substrate in sequence; the semiconductor layer is made of metal oxide;

patterning the first metal layer and the gate insulating layer through the photoresist portion to form a gate electrode and expose the semiconductor layer not covered by the photoresist portion;

conducting a conductor treatment on the semiconductor layer exposed outside to form a connecting part, and hardening the outer surface of the photoresistance part while conducting the conductor treatment on the semiconductor layer exposed outside to obtain a substrate;

processing the substrate by adopting preset gas to remove the hardened photoresistance part; the preset gas is special gas containing fluorine element;

and removing the residual photoresist part to expose the grid outside.

2. The method of claim 1, wherein the step of processing the substrate with a predetermined gas to remove the hardened photoresist portion comprises:

and carrying out plasma treatment on the substrate by adopting a preset gas.

3. The method as claimed in claim 2, wherein the predetermined gas comprises NF₃And CF₄At least one of (1).

4. The method according to claim 1, wherein the step of patterning the first metal layer and the gate insulating layer through the photoresist portion to form a gate electrode and expose a semiconductor layer not covered by the photoresist portion comprises:

etching the first metal layer for the first time by using the light resistance part as a shielding body so as to remove the first metal layer which is not covered by the light resistance part and form a grid;

and etching the gate insulating layer for the second time by using the photoresist part as a shielding body so as to remove the gate insulating layers at two sides of the gate and expose the semiconductor layers at two sides of the gate.

5. The method for manufacturing a display panel according to claim 1, wherein the method further comprises: and sequentially manufacturing a first insulating layer, a source electrode and a drain electrode on the connecting part and the grid electrode, wherein the source electrode and the drain electrode are connected with the connecting part.

6. The method for manufacturing a display panel according to claim 5, wherein the method further comprises: and manufacturing a second insulating layer on the source electrode and the drain electrode, and manufacturing a pixel electrode on the second insulating layer.

7. The method of manufacturing a display panel according to claim 1, wherein the step of manufacturing the semiconductor layer on the base substrate is preceded by the method further comprising:

and manufacturing a light shielding layer on the substrate, wherein the area of the orthographic projection of the light shielding layer on the substrate is larger than the area of the orthographic projection of the semiconductor layer on the substrate.

8. The method for manufacturing a display panel according to claim 7, wherein after the step of manufacturing a light-shielding layer on a base substrate and before the step of manufacturing a semiconductor layer on the base substrate, the method further comprises:

and manufacturing a buffer layer on the light shielding layer.

9. The method for manufacturing a display panel according to claim 1, wherein the light-blocking portion is obtained by:

and manufacturing a photoresist layer on the first metal layer, and patterning the photoresist layer to form a photoresist part.

10. The method of manufacturing a display panel according to claim 1, wherein a material of the semiconductor layer includes one of IGZO, IGZTO, and ITZO.

[ technical field ] A method for producing a semiconductor device

The invention relates to the technical field of display, in particular to a manufacturing method of a display panel.

[ background of the invention ]

At present, a metal oxide semiconductor layer is generally made into a conductor by an ion bombardment method, for a structure that a grid electrode is arranged on the semiconductor layer, because a photoresist layer is required to be manufactured on the grid electrode in the manufacturing process, then the grid electrode is etched by adopting a patterned photoresist layer, then a grid insulating layer is etched, and then the semiconductor layer is made into a conductor, however, because the photoresist layer is not stripped in the process of making the semiconductor layer into a conductor, the photoresist layer is easily hardened, so that the subsequent photoresist layer is difficult to strip(ii) a If O is used₂Ashing (Ash) for hardening the photoresist layer may result in a decrease in the conductivity of the semiconductor layer.

[ summary of the invention ]

The invention aims to provide a manufacturing method of a display panel, which can remove a hardened photoresist layer and improve the conductivity of a semiconductor layer.

In order to solve the above technical problem, the present invention provides a method for manufacturing a display panel, including:

manufacturing a semiconductor layer, a gate insulating layer, a first metal layer and a light resistance part on a substrate in sequence; the semiconductor layer is made of metal oxide;

patterning the first metal layer and the gate insulating layer through the photoresist portion to form a gate electrode and expose the semiconductor layer not covered by the photoresist portion;

conducting a conductor treatment on the semiconductor layer exposed outside to form a connecting part, and hardening the outer surface of the photoresistance part while conducting the conductor treatment on the semiconductor layer exposed outside to obtain a substrate;

processing the substrate by adopting preset gas to remove the hardened photoresistance part; the preset gas is special gas containing fluorine element;

and removing the residual photoresist part to expose the grid outside.

The manufacturing method of the display panel comprises the steps of sequentially manufacturing a semiconductor layer, a gate insulating layer, a first metal layer and a light resistance part on a substrate; patterning the first metal layer and the gate insulating layer through the photoresist portion to form a gate electrode and expose the semiconductor layer not covered by the photoresist portion; conducting a conductor treatment on the semiconductor layer exposed outside to form a connecting part, and hardening the outer surface of the photoresistance part while conducting the conductor treatment on the semiconductor layer exposed outside to obtain a substrate; processing the substrate by adopting preset gas to remove the hardened photoresistance part; removing the residual photoresist part to expose the grid; because the hardened photoresist part is removed by adopting the preset gas, the semiconductor layer is prevented from contacting with oxygen, and the conductivity of the semiconductor layer is improved while the hardened photoresist layer is removed.

[ description of the drawings ]

FIG. 1 is a schematic structural diagram of a conventional method for fabricating a display panel;

fig. 2 is a schematic structural diagram of a first step to a fourth step of a method for manufacturing a display panel according to a first embodiment of the invention;

fig. 3 is a schematic structural diagram of a fifth step of the method for manufacturing a display panel according to the first embodiment of the invention;

fig. 4 is a schematic structural diagram of a first step of a manufacturing method of a display panel according to a second embodiment of the invention;

FIG. 5 is a structural diagram of a second step of a method for manufacturing a display panel according to a second embodiment of the present invention;

fig. 6 is a schematic structural diagram of a third step of the manufacturing method of the display panel according to the second embodiment of the invention;

fig. 7 is a schematic structural diagram of a fourth step of the method for manufacturing a display panel according to the second embodiment of the invention;

fig. 8 is a schematic structural diagram of a fifth step and a sixth step in the method for manufacturing a display panel according to the second embodiment of the invention;

fig. 9 is a schematic structural diagram of a seventh step of the method for manufacturing a display panel according to the second embodiment of the invention;

fig. 10 is a schematic structural diagram of an eighth step of the method for manufacturing a display panel according to the second embodiment of the invention;

fig. 11 is a schematic structural diagram of a ninth step of the method for manufacturing a display panel according to the second embodiment of the invention;

fig. 12 is a schematic structural diagram of a tenth step of the method for manufacturing a display panel according to the second embodiment of the invention;

fig. 13 is a schematic structural diagram of a first step in a tenth step of the method for manufacturing a display panel according to the second embodiment of the present invention;

fig. 14 is a schematic structural diagram of a second step in the tenth step of the method for manufacturing a display panel according to the second embodiment of the present invention;

fig. 15 is a schematic structural diagram of a twelfth step of the manufacturing method of the display panel according to the second embodiment of the invention.

[ detailed description ] embodiments

The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the invention may be practiced. In the present invention, directional terms such as "up", "down", "front", "back", "left", "right", "inner", "outer", "side", etc. refer to directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention. In the drawings, elements having similar structures are denoted by the same reference numerals.

The terms "first," "second," and the like in the description and claims of the present application and in the above-described drawings are used for distinguishing between different objects and not for describing a particular order. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover non-exclusive inclusions.

As shown in fig. 1, a conventional method for manufacturing a display panel includes:

s101, sequentially manufacturing a semiconductor layer 13, a gate insulating layer 14, a first metal layer 15 and a light resistance part 16 on a substrate 11;

for example, the entire semiconductor layer 13 is sequentially formed on the base substrate 11, and then patterned to obtain a desired pattern. The material of the semiconductor layer 13 is metal oxide;

the entire gate insulating layer 14, the first metal layer 15, and the entire photoresist layer are formed on the patterned semiconductor layer 13, and the photoresist layer is patterned to form the photoresist portion 16.

S102, patterning the first metal layer and the gate insulating layer through the photoresist part to form a gate and expose the semiconductor layer uncovered by the photoresist part;

for example, the first metal layer 15 and the gate insulating layer 14 are patterned through the photoresist portion 16 to form a gate electrode and expose the semiconductor layer 13 not covered by the photoresist portion 16.

S103, the exposed semiconductor layer 13 is subjected to a conductor forming process to form a connection portion.

For example, the exposed semiconductor layer 13 is subjected to a conductor forming process and the outer surface 161 (i.e., the upper surface) of the photoresist portion 16 is hardened. The connection portion 131 can be formed by ion bombardment of the semiconductor layer with a protective gas such as He or Ar to make the semiconductor layer 13 conductive.

As shown in fig. 2 and fig. 3, a method for manufacturing a display panel according to a first embodiment of the present invention includes:

s201, sequentially manufacturing a semiconductor layer, a gate insulating layer, a first metal layer and a light resistance part on a substrate;

for example, the entire semiconductor layer 13 is sequentially formed on the base substrate 11, and then patterned to obtain a desired pattern. The material of the semiconductor layer 13 is a metal oxide. Wherein the material of the semiconductor layer may include one of IGZO, IGZTO, and ITZO.

The entire gate insulating layer 14, the first metal layer 15, and the entire photoresist layer are formed on the patterned semiconductor layer 13, and the photoresist layer is patterned to form the photoresist portion 16.

S202, patterning the first metal layer and the gate insulating layer through the photoresist part to form a gate and expose the semiconductor layer uncovered by the photoresist part;

for example, the first metal layer 15 and the gate insulating layer 14 are patterned through the photoresist portion 16, respectively, to form a gate electrode and expose the semiconductor layer 13 not covered by the photoresist portion 16.

S203, conducting treatment on the exposed semiconductor layer to form a connecting part, conducting treatment on the exposed semiconductor layer, and simultaneously hardening the outer surface of the photoresist part to obtain a substrate;

for example, the exposed semiconductor layer 13 may be subjected to a conductor forming process to form the connection portion 131, and in one embodiment, the semiconductor layer 13 may be subjected to ion bombardment with a protective gas such as He or Ar to form a conductor. The exposed semiconductor layer is subjected to a conductor forming process and simultaneously an outer surface 161 (i.e., an upper surface) of the photoresist portion 16 is hardened, thereby obtaining a substrate 10.

S204, processing the substrate by adopting preset gas to remove the hardened photoresistance part;

for example, wherein the predetermined gas is a special gas containing fluorine; the substrate 10 is treated with a special gas containing fluorine element to remove the hardened photoresist portion 161. The arrows in fig. 2 may indicate the direction of the introduction of the particular gas. The process is carried out in a vacuum chamber.

S205, the residual photoresist part is removed to expose the grid.

For example, as shown in fig. 3, the resist portions 16 under the hardened resist portions 161 are also removed.

Because the hardened photoresist part is removed by adopting the preset gas, the semiconductor layer is prevented from contacting with oxygen, and the conductivity of the semiconductor layer is improved while the hardened photoresist layer is removed.

As shown in fig. 4 to fig. 15, the method for manufacturing a display panel according to the second embodiment of the present invention includes:

s301, a light shielding layer is manufactured on the substrate.

As shown in fig. 4, a light-shielding layer 20 is formed on a base substrate 11. The material of the light shielding layer 20 may be a metal material.

And S302, manufacturing a buffer layer on the shading layer.

As shown in fig. 5, a buffer layer 12 is formed on the light-shielding layer 20. It is to be understood that the material of the buffer layer is not limiting to the invention.

S303, sequentially manufacturing a whole semiconductor layer on the buffer layer, and patterning the semiconductor layer to obtain a required pattern;

as shown in fig. 6, the entire semiconductor layer 13 is sequentially formed on the buffer layer 16, and then patterned to obtain a desired pattern. The material of the semiconductor layer 13 is metal oxide; wherein the material of the semiconductor layer 13 may include one of IGZO, IGZTO, and ITZO. Wherein the patterned semiconductor layer covers the gate electrode. The patterned semiconductor layer 13 is used to form a channel.

Wherein an area of an orthographic projection of the light shielding layer 20 on the substrate 11 is larger than an area of an orthographic projection of the semiconductor layer 13 on the substrate 11.

And S304, manufacturing a gate insulating layer on the patterned semiconductor layer.

As shown in fig. 7, a gate insulating layer 14 is formed on the patterned semiconductor layer 13.

S305, sequentially manufacturing a first metal layer and a light resistance part on the gate insulating layer;

for example, as shown in fig. 8, a first metal layer 15 and a photoresist layer are sequentially formed on the gate insulating layer 14, and the photoresist layer is patterned to form a photoresist portion 16.

That is, the photoresist portion 16 is obtained by the following steps: a photoresist layer is formed on the first metal layer 15, and the photoresist layer is patterned to form a photoresist portion.

S306, etching the first metal layer for the first time by taking the photoresist part as a shielding body so as to remove the first metal layer which is not covered by the photoresist part and form a grid electrode;

for example, as shown in fig. 8, the first metal layer 15 is etched for the first time by using the photoresist portion 16 as a barrier to remove the first metal layer 15 not covered by the photoresist portion 16, so as to form a gate 151, wherein the gate 151 corresponds to the position of the photoresist portion 16. In one embodiment, the first etching is a wet etching.

And S307, performing second etching on the gate insulating layer by taking the photoresist part as a shielding body to remove the gate insulating layers on two sides of the gate and expose the semiconductor layers on two sides of the gate.

For example, as shown in fig. 9, the gate insulating layer 14 is etched for the second time by using the photoresist portion 16 as a barrier to remove the gate insulating layer on both sides of the gate electrode 151, so that the semiconductor layer 13 on both sides of the gate electrode 14 is exposed. In one embodiment, the second etching may be a dry etching. Wherein the gate insulating layer 14 directly under the gate electrode 151 is not removed.

S308, conducting a conductor treatment on the exposed semiconductor layer to form a connecting part, and hardening the outer surface of the photoresist part while conducting the conductor treatment on the exposed semiconductor layer to obtain a substrate;

for example, as shown in fig. 10, the exposed semiconductor layer 13 is subjected to a conductor forming process to form a connection portion 131. In one embodiment, the semiconductor layer 13 may be made conductive by ion bombardment of the semiconductor layer with a protective gas such as He or Ar. The exposed semiconductor layer is subjected to a conductor forming process and simultaneously an outer surface 161 (i.e., an upper surface) of the photoresist portion 16 is hardened, thereby obtaining a substrate 10.

S309, processing the substrate by adopting preset gas to remove the hardened photoresistance part; the preset gas is special gas containing fluorine element;

for example, as shown in fig. 11, wherein the predetermined gas is a special gas containing fluorine element; the substrate 10 is treated with a special gas containing fluorine element to remove the hardened photoresist portion 161. A special gas, such as fluorine, chemically reacts with the hardened photoresist portion to cure the hardened photoresist portion 161. The arrows in fig. 11 may indicate the direction of the introduction of the specific gas. In one aspect, to further improve the removal effect of the hardened photoresist, the predetermined gas comprises NF₃And CF₄At least one of (1).

In one embodiment, in order to further improve the removing effect of the hardened photoresist portion 161, the step of processing the substrate with a predetermined gas to remove the hardened photoresist portion includes:

s3091, performing plasma treatment on the substrate 10 using a predetermined gas.

S310, removing the residual photoresist part to expose the grid.

As shown in fig. 12, for example, the resist 16 below the cured resist 161 is also removed.

S311, sequentially manufacturing a first insulating layer, a source electrode and a drain electrode on the connecting portion and the grid electrode, wherein the source electrode and the drain electrode are connected with the connecting portion.

For example, as shown in fig. 13, a first insulating layer 17 is formed on the connection portion 131, the gate electrode 151, and the buffer layer 12, and the first insulating layer is patterned to form a connection hole (not shown).

As shown in fig. 14, a second metal layer is formed in the first insulating layer 17 and the connection hole, and the second metal layer is patterned to form a source electrode 181 and a drain electrode 182. Wherein the patterning process comprises the steps of exposure, development, etching and the like.

And S312, manufacturing a second insulating layer on the source electrode and the drain electrode, and manufacturing a pixel electrode on the second insulating layer.

As shown in fig. 15, a second insulating layer 19 is formed on the source electrode 181 and the drain electrode 182 and the first insulating layer 17, wherein a via hole is formed on the second insulating layer, a transparent conductive layer is formed on the second insulating layer 19 and in the via hole, and the transparent conductive layer is patterned to obtain a pixel electrode 21.

The manufacturing method of the display panel comprises the steps of sequentially manufacturing a semiconductor layer, a gate insulating layer, a first metal layer and a light resistance part on a substrate; patterning the first metal layer and the gate insulating layer through the photoresist portion to form a gate electrode and expose the semiconductor layer not covered by the photoresist portion; conducting a conductor treatment on the semiconductor layer exposed outside to form a connecting part, and hardening the outer surface of the photoresistance part while conducting the conductor treatment on the semiconductor layer exposed outside to obtain a substrate; processing the substrate by adopting preset gas to remove the hardened photoresistance part; the preset gas is special gas containing fluorine element; removing the residual photoresist part to expose the grid; because the hardened photoresist part is removed by adopting the preset gas, the semiconductor layer is prevented from contacting with oxygen, and the conductivity of the semiconductor layer is improved while the hardened photoresist layer is removed.

In summary, although the present invention has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, therefore, the scope of the present invention shall be determined by the appended claims.