阅读说明：本技术 一种硅覆绝缘片薄膜 (Silicon-coated insulating sheet film ) 是由 刘珂 于 2018-08-09 设计创作，主要内容包括：本发明属于硅晶片领域，具体涉及一种硅覆绝缘片薄膜。其特征在于通过在提供的高阻硅晶片上形成一层电介质材料（氧化硅），再于电介质材料层上形成一层非晶硅，转移一层氧化硅在非晶硅上，使氧化层上存在单晶硅，从而制备出具有非晶硅层的硅覆绝缘片。(The invention belongs to the field of silicon wafers, and particularly relates to a silicon-coated insulating sheet film. The method is characterized in that a layer of dielectric material (silicon oxide) is formed on the provided high-resistance silicon wafer, then a layer of amorphous silicon is formed on the dielectric material layer, and a layer of silicon oxide is transferred on the amorphous silicon, so that monocrystalline silicon exists on the oxide layer, and the silicon-coated insulating sheet with the amorphous silicon layer is prepared.)

1. A silicon-on-insulator sheet film is characterized in that a layer of dielectric material (silicon oxide) is formed on a provided high-resistance silicon wafer, then a layer of amorphous silicon is formed on the dielectric material layer, and a layer of silicon oxide is transferred on the amorphous silicon, so that monocrystalline silicon exists on the oxide layer, thereby preparing a silicon-on-insulator sheet with an amorphous silicon layer.

2. A silicon wafer insulating sheet film is characterized in that the silicon-on-insulator sheet with an amorphous silicon layer is mainly used for electronic radio frequency machines.

3. A silicon-on-insulator film is characterized by comprising the following steps of (1) providing a high-resistance silicon wafer, sequentially preparing a silicon oxide layer and an amorphous silicon layer on the surface of the silicon wafer after cleaning, wherein the thickness of the silicon oxide layer is 100-300 Å, and the thickness of the amorphous silicon layer is 1-10 mu m, (2) providing a low-resistance silicon wafer, preparing the silicon oxide layer on the surface of the silicon wafer after cleaning, wherein the thickness of the silicon oxide layer is 1500-12000 Å, (3) carrying out hydrogen ion implantation on the low-resistance silicon wafer prepared in the step (2) to enable hydrogen ions to penetrate through the silicon oxide layer and be implanted into the silicon wafer to reach the required depth, (4) integrating the high-resistance silicon wafer and the low-resistance silicon wafer in a bonding mode, then carrying out treatment at 400 ℃, and (5) carrying out fragmentation on the integrated body obtained after bonding in the step (4) by adopting a microwave fragmentation device, wherein the fragmentation temperature is 1500 ℃ to carry out treatment so as to obtain the silicon-on-insulator film with a non-crystal layer, and (6) cleaning the silicon-on-insulator film by adopting DHF to remove the oxide layer formed.

Technical Field

The invention belongs to the field of silicon wafers, and particularly relates to a silicon-coated insulating sheet film.

Background

Silicon, a chemical element whose chemical symbol is Si, is known as silicon. The atomic number 14, relative to the atomic mass 28.0855, is two allotropes of amorphous silicon and crystalline silicon, which belong to the metalloid elements of group IVA in the third period of the periodic Table of elements.

Disclosure of Invention

Currently, the silicon crystal thin film materials mainly comprise 1, quartz silicon, sapphire silicon: quartz silicon tends to produce low leakage currents, and this type of silicon is also very expensive.2, high resistance substrate silicon: its resistivity is above 500ohm.cm, this kind of substrate is worse than the first, but the cost is lower.3, high resistance SOI substrate: the performance exhibited is worse than the first. The invention aims to overcome the defects in the prior art and provides a silicon-coated insulating sheet film, which is an SOI (silicon on insulator) sheet with an amorphous silicon layer, wherein the amorphous silicon layer is introduced into the SOI sheet, and the effective combination of the amorphous silicon and silicon oxide can effectively inhibit the surface parasitic conductance of a silicon substrate, limit the capacitance change and reduce the power of generated harmonic waves, so that the loss of the resistivity of a high-resistance SOI substrate is reduced to the minimum, and the existing market requirements are met.

The invention relates to a silicon-on-insulator sheet film, which comprises the steps of (1) providing a high-resistance silicon wafer, preparing a silicon oxide layer and an amorphous silicon layer on the surface of the silicon wafer in sequence after cleaning, wherein the thickness of the silicon oxide layer is 100-300 Å, and the thickness of the amorphous silicon layer is 1-10 mu m, (2) providing a low-resistance silicon wafer, preparing a silicon oxide layer on the surface of the silicon wafer after cleaning, wherein the thickness of the silicon oxide layer is 1500-12000 Å, (3) carrying out hydrogen ion implantation on the low-resistance silicon wafer prepared in the step (2) to ensure that hydrogen ions penetrate through the silicon oxide layer and are implanted into the silicon wafer to reach the required depth, (4) forming the high-resistance silicon wafer and the low-resistance silicon wafer into a whole through a bonding mode, then carrying out treatment at 400 ℃, and (5) carrying out cracking on the whole bonded in the step (4) by adopting a microwave cracking device, wherein the cracking temperature is 1500 ℃ to carry out treatment to obtain the silicon-on-insulator sheet film, and (6) cleaning the silicon-on-insulator sheet by adopting DHF to remove the oxide layer.

Detailed Description