Display substrate, preparation method thereof and display device
阅读说明:本技术 一种显示基板及其制备方法、显示装置 (Display substrate, preparation method thereof and display device ) 是由 刘宁 苏同上 王庆贺 王东方 周斌 闫梁臣 于 2019-11-19 设计创作,主要内容包括:本发明公开了一种显示基板及其制备方法、显示装置,所述显示基板包括:基底,设置在所属基底上的驱动结构层,所述驱动结构层包括:有源层、设置在所述有源层上的第一绝缘层,设置在所述第一绝缘层上的栅极和栅极信号走线,设置在所述栅极和栅极信号走线上的第二绝缘层,设置在所述第二绝缘层上的源漏电极和辅助阴极,其中,至少满足以下之一:所述栅极信号走线的厚度大于所述栅极的厚度,所述辅助阴极的厚度大于所述源漏电极的厚度。本实施例提供的方案,通过改变栅极信号走线与栅极的厚度差,辅助阴极与源漏电极的厚度差,减少了落差,减少了后续的过孔的深度,有利于实现搭接,提高了产品质量。(The invention discloses a display substrate, a preparation method thereof and a display device, wherein the display substrate comprises: the substrate, set up the drive structure layer on affiliated substrate, the drive structure layer includes: the active layer, set up in the first insulating layer on the active layer, set up grid and grid signal on the first insulating layer are walked, set up in the second insulating layer on grid and grid signal are walked, set up source-drain electrode and auxiliary cathode on the second insulating layer, wherein, satisfy one of following at least: the thickness of the gate signal wiring is larger than that of the gate, and the thickness of the auxiliary cathode is larger than that of the source and drain electrodes. According to the scheme provided by the embodiment, the thickness difference between the grid signal wiring and the grid is changed, the thickness difference between the auxiliary cathode and the source and drain electrodes is reduced, the fall is reduced, the depth of subsequent via holes is reduced, the lap joint is facilitated, and the product quality is improved.)
1. A display substrate, comprising: the substrate, set up the drive structure layer on affiliated substrate, the drive structure layer includes: the active layer, set up in the first insulating layer on the active layer, set up grid and grid signal on the first insulating layer are walked, set up in the second insulating layer on grid and grid signal are walked, set up source-drain electrode and auxiliary cathode on the second insulating layer, wherein, satisfy one of following at least: the thickness of the gate signal wiring is larger than that of the gate, and the thickness of the auxiliary cathode is larger than that of the source and drain electrodes.
2. The display substrate of claim 1, wherein the driving structure layer further comprises a passivation layer disposed on the source and drain electrodes and the auxiliary cathode, a planarization layer disposed on the passivation layer, and a reflective anode and a connection electrode disposed on the planarization layer, wherein the reflective anode is connected to the source and drain electrodes through a first via, and the connection electrode is connected to the auxiliary cathode through a second via.
3. The display substrate of claim 2, wherein the planarization layer is made of an organosiloxane material.
4. The display substrate of claim 1, wherein the driving structure layer further comprises: and the light shielding layer and the buffer layer are sequentially arranged between the substrate and the active layer.
5. The display substrate according to any one of claims 1 to 4, wherein the thickness of the gate is 1/3-1/2 of the thickness of the gate signal trace.
6. The display substrate according to any one of claims 1 to 4, wherein the thickness of the source and drain electrodes is 1/3-1/2 of the thickness of the auxiliary cathode.
7. A display device comprising the display substrate according to any one of claims 1 to 6.
8. A method for preparing a display substrate is characterized by comprising the following steps:
forming a substrate;
forming a drive structure layer disposed on the substrate, the drive structure layer comprising: the active layer, set up in the first insulating layer on the active layer, set up grid and grid signal on the first insulating layer are walked, set up in the second insulating layer on grid and grid signal are walked, set up source-drain electrode and auxiliary cathode on the second insulating layer, wherein, satisfy one of following at least: the thickness of the gate signal wiring is larger than that of the gate, and the thickness of the auxiliary cathode is larger than that of the source and drain electrodes.
9. The method of claim 8, wherein the gate and gate signal traces are prepared based on:
depositing a first metal film on the first insulating layer, and forming a pattern at a position corresponding to the gate signal wiring by patterning;
and depositing the first metal film again, and forming a grid pattern and a grid signal wiring pattern by composition.
10. The method for manufacturing a display substrate according to claim 8 or 9, wherein the source-drain electrode and the auxiliary cathode are manufactured based on the following method:
depositing a second metal film on the second insulating layer, and patterning to form a pattern at a position corresponding to the auxiliary cathode;
and depositing the second metal film again, and patterning to form a source and drain electrode pattern and an auxiliary cathode pattern.
Technical Field
The present invention relates to display technologies, and in particular, to a display substrate, a method for manufacturing the same, and a display device.
Background
A top gate TFT (Thin Film Transistor) has a short channel characteristic, so that an on-state current Ion thereof is effectively increased, thereby significantly improving a display effect and effectively reducing power consumption. In addition, since the overlap area between the Gate and the source/drain of the top Gate TFT is small, the parasitic capacitance generated is small, and thus the possibility of occurrence of defects such as GDS (Gate Data Short), etc. is reduced. The top gate type TFT has been receiving more and more attention because of its remarkable advantages as described above.
In recent years, large-sized AMOLED (Active-matrix Organic Light-Emitting Diode) display products have the advantages of high color gamut, high contrast, self-luminescence, and the like, and are widely applied to the fields of televisions and the like. In the manufacturing process of an AMOLED display panel with large size and high resolution, such as 8K and the like, because the density of 8K display pixels is extremely high, if the traditional evaporation and bottom emission combined mode is still adopted, the aperture ratio of the pixels is too low to meet the brightness requirement, and the like, the technology of printing primary color luminescent materials by combining top emission with bottom emission is mainly adopted for the current products. In order to make the primary color luminescent material printed on the array substrate TFT emit light more uniformly and have different colors without interfering with each other, it is necessary to perform planarization processing on the array substrate by using an SOG (Silicon Organic Glass, Organic siloxane material), and the subsequent reflective anode film layer is difficult to overlap with an SD (source/drain), and thus poor overlapping is likely to occur, which seriously affects the display quality of the product.
Disclosure of Invention
At least one embodiment of the invention provides a display substrate, a preparation method thereof and a display device, and the display quality of a product is improved.
To achieve the above object, at least one embodiment of the present invention provides a display substrate, including: the substrate, set up the drive structure layer on affiliated substrate, the drive structure layer includes: the active layer, set up in the first insulating layer on the active layer, set up grid and grid signal on the first insulating layer are walked, set up in the second insulating layer on grid and grid signal are walked, set up source-drain electrode and auxiliary cathode on the second insulating layer, wherein, satisfy one of following at least: the thickness of the gate signal wiring is larger than that of the gate, and the thickness of the auxiliary cathode is larger than that of the source and drain electrodes.
In an embodiment, the driving structure layer further includes a passivation layer disposed on the source-drain electrode and the auxiliary cathode, a planarization layer disposed on the passivation layer, and a reflective anode and a connection electrode disposed on the planarization layer, wherein the reflective anode is connected to the source-drain electrode through a first via hole, and the connection electrode is connected to the auxiliary cathode through a second via hole.
In one embodiment, the planarization layer is made of an organosiloxane material.
In one embodiment, the driving structure layer further includes: and the light shielding layer and the buffer layer are sequentially arranged between the substrate and the active layer.
In one embodiment, the thickness of the gate is 1/3-1/2 of the thickness of the gate signal trace.
In one embodiment, the thickness of the source and drain electrodes is 1/3-1/2 of the thickness of the auxiliary cathode.
At least one embodiment of the present invention provides a display device, which includes the display substrate described in the above embodiment.
At least one embodiment of the present invention provides a method for manufacturing a display substrate, including:
forming a substrate;
forming a drive structure layer disposed on the substrate, the drive structure layer comprising: the active layer, set up in the first insulating layer on the active layer, set up grid and grid signal on the first insulating layer are walked, set up in the second insulating layer on grid and grid signal are walked, set up source-drain electrode and auxiliary cathode on the second insulating layer, wherein, satisfy one of following at least: the thickness of the gate signal wiring is larger than that of the gate, and the thickness of the auxiliary cathode is larger than that of the source and drain electrodes.
In one embodiment, the gate and the gate signal traces are prepared based on the following method:
depositing a first metal film on the first insulating layer, and forming a pattern at a position corresponding to the gate signal wiring by patterning;
and depositing the first metal film again, and forming a grid pattern and a grid signal wiring pattern by composition.
In one embodiment, the source-drain electrode and the auxiliary cathode are prepared based on the following method:
depositing a second metal film on the second insulating layer, and patterning to form a pattern at a position corresponding to the auxiliary cathode;
and depositing the second metal film again, and patterning to form a source and drain electrode pattern and an auxiliary cathode pattern.
Compared with the related art, the display substrate provided by the embodiment of the invention comprises: the substrate, set up the drive structure layer on affiliated substrate, the drive structure layer includes: the active layer, set up in the first insulating layer on the active layer, set up grid and grid signal on the first insulating layer are walked, set up in the second insulating layer on grid and grid signal are walked, set up source-drain electrode and auxiliary cathode on the second insulating layer, wherein, satisfy one of following at least: the thickness of the gate signal wiring is larger than that of the gate, and the thickness of the auxiliary cathode is larger than that of the source and drain electrodes. According to the scheme provided by the embodiment, the thickness difference between the grid signal wiring and the grid is changed, the thickness difference between the auxiliary cathode and the source and drain electrodes is reduced, the fall is reduced, the depth of subsequent via holes is reduced, the lap joint is facilitated, and the product quality is improved.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the example serve to explain the principles of the invention and not to limit the invention.
FIGS. 1 to 4 are schematic views of a display substrate provided in the related art;
fig. 5 is a schematic view of a display substrate according to an embodiment of the present application;
FIG. 6 is a schematic diagram illustrating a substrate, a light-shielding layer and a buffer layer after patterning according to an embodiment of the present disclosure;
FIG. 7 is a schematic view illustrating the deposition of a first metal film according to one embodiment of the present disclosure;
FIG. 8 is a schematic view of a first metal film patterned according to an embodiment of the present disclosure;
FIG. 9 is a schematic view of a second deposition of a first metal film according to an embodiment of the present application;
FIG. 10 is a schematic view illustrating a gate pattern and a gate signal trace pattern formed according to an embodiment of the present application;
fig. 11 is a schematic view illustrating a source electrode pattern, a drain electrode pattern, and an auxiliary cathode pattern formed according to an embodiment of the present application;
FIG. 12 is a schematic view of a planarized layer formed according to an embodiment of the present application;
FIG. 13 is a schematic view of a planarization layer after forming a via in accordance with an embodiment of the present disclosure;
FIG. 14 is a schematic view of a reflective anode and a connecting electrode formed in accordance with an embodiment of the present application;
fig. 15 is a flowchart of a method for manufacturing a display substrate according to an embodiment of the present disclosure.
Description of reference numerals:
1-a glass carrier plate; 10-a substrate; 11a — a light-shielding layer;
11 b-a buffer layer; 12-an active layer; 13 — a first insulating layer;
14-a gate; 15-routing of grid signals; 16 — a second insulating layer;
19-source electrode; 20-a drain electrode; 21-an auxiliary cathode;
22 — a third insulating layer; 23-a planarization layer; 31-an anode;
32-connecting electrodes; 15a — a first metal film; 15b — initial pattern.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that the embodiments and features of the embodiments in the present application may be arbitrarily combined with each other without conflict.
The steps illustrated in the flow charts of the figures may be performed in a computer system such as a set of computer-executable instructions. Also, while a logical order is shown in the flow diagrams, in some cases, the steps shown or described may be performed in an order different than here.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
As shown in fig. 1, a display substrate includes a
An embodiment of the invention provides a display substrate, a manufacturing method thereof and a display device, wherein a brand-new TFT metal wiring design is adopted, so that the depth and the profile of an SOG through hole can be greatly reduced, the overlapping condition of a reflective anode is greatly improved, and the display quality of a product is improved. The display substrate provided by the embodiment of the invention comprises: the substrate, set up the drive structure layer on affiliated substrate, the drive structure layer includes: the active layer, set up in the first insulating layer on the active layer, set up grid and grid signal on the first insulating layer are walked, set up in the second insulating layer on grid and grid signal are walked, set up source-drain electrode and auxiliary cathode on the second insulating layer, wherein, satisfy one of following at least: the thickness of the gate signal wiring is larger than that of the gate, and the thickness of the auxiliary cathode is larger than that of the source and drain electrodes. According to the scheme provided by the embodiment, through changing the thickness difference of the grid and the grid signal wiring and at least one of the thickness difference of the source drain electrode and the auxiliary cathode, the offset between a TFT area and a non-TFT area is obviously reduced, the thickness of the planarization layer to be coated is thinned, so that the depth of the via hole is shallow, thinner PR glue can be used, and shorter dry etching time can be used, so that the slope angle profile of the formed via hole can be also slowed down, the overlapping of a subsequent reflection anode film layer is facilitated, and the display quality of a product is improved.
Fig. 5 is a schematic diagram of a display substrate according to an embodiment of the invention, illustrating a structure of a display area on a plane perpendicular to the display substrate. As shown in fig. 5, the main structure of the display area includes a driving structure layer disposed on the substrate in a plane perpendicular to the display substrate, the driving structure layer includes a plurality of thin film transistors, and only one thin film transistor is illustrated in fig. 5 as an example. The display substrate provided by the embodiment comprises: the organic light emitting diode comprises a
The following further illustrates the technical solution of the embodiment of the present invention through the manufacturing process of the display substrate of this embodiment. The "patterning process" in this embodiment includes processes such as film deposition, photoresist coating, mask exposure, development, etching, and photoresist stripping, the "photolithography process" in this embodiment includes processes such as film coating, mask exposure, and development, and the evaporation, deposition, coating, and coating in this embodiment are well-established preparation processes in the related art.
FIGS. 6-14 are schematic diagrams illustrating a manufacturing process of the display substrate of this embodiment. The preparation process of the display substrate comprises the following steps:
(1) and forming a substrate, a light-shielding layer and a buffer layer pattern. Forming the substrate, the light-shielding layer, and the buffer layer pattern includes: a
The
(2) An active layer pattern (Act pattern), a gate pattern and a gate signal routing pattern are formed on the buffer layer. Forming an active layer pattern, a gate pattern and a gate signal routing pattern on the buffer layer includes:
depositing an active layer film on the basis of the structure, and patterning the active layer film through a patterning process to form an
subsequently, a first insulating film is deposited to form a first insulating
Subsequently, the first metal
The first metal film is deposited again as shown in fig. 9, and the first metal film is patterned to form a
(3) A second insulating layer pattern, a source electrode pattern, a drain electrode pattern, and an auxiliary cathode pattern are formed.
Forming the second insulating layer pattern, the source electrode pattern, the drain electrode pattern, and the auxiliary cathode pattern includes: on the basis of forming the structure, depositing a second insulating film, patterning the second insulating film through a patterning process, forming a second insulating
Depositing a second metal film, patterning the second metal film through a patterning process, and forming a pattern at a position corresponding to the auxiliary cathode;
a second metal film is again deposited and patterned through a patterning process to form a
It can be seen that the metal layers of the
The
The second insulating
(4) Forming a passivation layer pattern and a planarization layer pattern
On the basis of forming the above structure, a third insulating film is coated, and a passivation layer (PVX)22 pattern covering the
subsequently, a fourth insulating film is applied, and a
Since the Gate and the SD of the TFT region are significantly thinned compared to the conventional process, so that the step between the TFT region and the non-TFT region is significantly reduced, the SOG planarization layer to be coated may be significantly thinned (the SOG thickness at the via to be formed is shown as h3 and h4 in fig. 12), it can be seen that the heights of h3 and h4 are significantly less than the heights of h1 and h2 in fig. 2, i.e. the depth of the via to be formed is significantly shallower, so that a thinner PR gel and a shorter dry etching time may be used, and the slope angle profile of the formed via may also be slowed down, thereby being very beneficial to the overlapping of the subsequent reflective anode film layer.
(5) Forming a reflective anode and a connection electrode pattern.
Forming the reflective anode pattern and the connection electrode includes: on the basis of forming the structure, a conductive film is deposited, the conductive film is patterned through a patterning process to form a pattern of a
By adopting the TFT metal wiring design provided by the embodiment, the depth and the profile of the SOG through hole can be greatly reduced, so that the overlapping condition of the reflective anode is greatly improved, and the quality improvement of a display product is facilitated.
According to the preparation process, the thickness proportion of the source-drain electrode and the auxiliary cathode and the thickness proportion of the grid electrode and the grid electrode wiring are changed, so that the offset of a TFT (thin film transistor) area and a non-TFT (thin film transistor) area is reduced, the depth of a via hole is reduced, the slope angle of the via hole is slowed down, the display quality of a product is improved by utilizing the lap joint of the reflective anode and the source electrode, and the display substrate has practical application value and good application prospect.
It should be noted that, in another embodiment, only the thickness ratio of the gate to the gate trace is changed, and the thickness ratio of the source electrode, the drain electrode and the auxiliary cathode is retained, or only the thickness ratio of the source electrode, the drain electrode and the auxiliary cathode is changed while the thickness ratio of the gate to the gate trace is retained.
It should be noted that the structure and the manufacturing process thereof shown in this embodiment are only an exemplary illustration. In practical implementation, the corresponding structure can be changed and the patterning process can be increased or decreased according to actual needs. For example, other electrodes, leads, and structural film layers may also be disposed in the driving structural layer. The embodiments of the present invention are not limited specifically herein.
It should be noted that, in another embodiment, another preparation method may also be adopted to form the gate pattern and the gate signal trace pattern, the source electrode pattern, the drain electrode pattern, and the auxiliary cathode pattern.
The formation of the gate pattern and the gate signal trace pattern is taken as an example for illustration. After the first insulating
As shown in fig. 15, based on the technical idea of the embodiment of the present invention, an embodiment of the present invention further provides a method for manufacturing a display substrate, including:
In one embodiment, in the
depositing a first metal film on the first insulating layer, and forming a pattern at a position corresponding to the gate signal wiring by patterning;
and depositing the first metal film again, and forming a grid pattern and a grid signal wiring pattern by composition.
In an embodiment, in
depositing a second metal film on the second insulating layer, and patterning to form a pattern at a position corresponding to the auxiliary cathode;
and depositing the second metal film again, and patterning to form a source and drain electrode pattern and an auxiliary cathode pattern.
In this embodiment, the structure, material, related parameters, and detailed preparation process of each film layer have been described in detail in the foregoing embodiments, and are not described herein again.
The embodiment provides a preparation method of a display substrate, by changing at least one of the thickness difference of a grid electrode and a grid electrode signal wiring and the thickness difference of a source drain electrode and an auxiliary cathode, the offset between a TFT area and a non-TFT area is obviously reduced, the thickness of a planarization layer to be coated is thinned, so that the depth of a via hole is shallow, a thinner PR glue can be used, and a shorter dry etching time is used, so that the slope angle profile of the formed via hole is also slowed down, the overlapping of a subsequent reflection anode film layer is facilitated, and the display quality of a product is improved.
Based on the technical idea of the embodiment of the present invention, an embodiment of the present invention further provides a display device, including the display substrate of the foregoing embodiment. The display device may be: any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like.
The following points need to be explained:
(1) the drawings of the embodiments of the invention only relate to the structures related to the embodiments of the invention, and other structures can refer to common designs.
(2) The thickness of layers or regions in the figures used to describe embodiments of the invention may be exaggerated or reduced for clarity, i.e., the figures are not drawn on a true scale. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
(3) Without conflict, embodiments of the present invention and features of the embodiments may be combined with each other to arrive at new embodiments.
Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
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