阅读说明：本技术 显示面板的制作方法和显示面板 (Display panel manufacturing method and display panel ) 是由 万康 冯兵明 顾维杰 葛泳 马应海 于 2019-11-19 设计创作，主要内容包括：本发明公开了一种显示面板的制作方法和显示面板。该包括：提供基板；在基板上形成沟道，沟道包括第一沟道和第二沟道；使所述第一沟道和所述第二沟道包含不同浓度的氢离子；基于沟道形成阵列器件，阵列器件包括基于第一沟道形成的驱动晶体管以及基于第二沟道形成的开关晶体管；在阵列器件远离基板的一侧形成发光器件层。通过使所述第一沟道和所述第二沟道包含不同浓度的氢离子，使第一沟道对应的驱动晶体管和第二沟道对应的开关晶体管的亚阈值摆幅不同，从而可以使驱动晶体管满足对灰阶的控制，同时使开关晶体管可以有较快的开关速度。(The invention discloses a display panel and a manufacturing method thereof. The method comprises the following steps: providing a substrate; forming a channel on a substrate, the channel including a first channel and a second channel; causing the first channel and the second channel to contain different concentrations of hydrogen ions; forming an array device based on the channel, the array device including a driving transistor formed based on the first channel and a switching transistor formed based on the second channel; and forming a light-emitting device layer on one side of the array device far away from the substrate. The first channel and the second channel contain hydrogen ions with different concentrations, so that the subthreshold swing amplitudes of the driving transistor corresponding to the first channel and the switching transistor corresponding to the second channel are different, the driving transistor can meet the gray scale control, and the switching transistor can have higher switching speed.)

1. A method for manufacturing a display panel is characterized by comprising the following steps:

providing a substrate;

forming a channel on the substrate, the channel including a first channel and a second channel;

performing hydrogen ion doping on the first channel and the second channel, and enabling the first channel and the second channel to contain hydrogen ions with different concentrations;

forming an array device based on the channel, the array device including a driving transistor formed based on the first channel and a switching transistor formed based on the second channel;

and forming a light-emitting device layer on one side of the array device far away from the substrate.

2. The method of claim 1, wherein doping the first channel and the second channel with hydrogen ions and allowing the first channel and the second channel to contain different concentrations of hydrogen ions comprises:

arranging a first mask on one side of the channel far away from the substrate, wherein an opening area of the first mask corresponds to the first channel, and a non-opening area of the first mask corresponds to the second channel;

implanting hydrogen ions into the first channel with a first dose and a first doping energy;

removing the first mask; arranging a second mask on one side of the channel far away from the substrate, wherein an opening area of the second mask corresponds to the second channel, and a non-opening area of the second mask corresponds to the first channel;

and implanting hydrogen ions into the second channel by using a second dosage and a second doping energy so that the concentration of the hydrogen ions in the second channel is different from that in the first channel.

3. The method of claim 2, wherein the first channel is a channel of a driving transistor, the second channel is a channel of a switching transistor, the first dose is less than the second dose, and the first doping energy is less than the second doping energy.

4. The method of claim 2, wherein the first dose is in a range of less than or equal to 1E +12ions/cm2, the second dose is in a range of 3E +12 to 5E +12ions/cm2, and the first doping energy and the second doping energy are in a range of less than or equal to 5 KV.

5. The method of claim 1, wherein the first channel and the second channel are made to contain different concentrations of hydrogen ions, further comprising:

forming a gate insulating layer on one side of the channel far away from the substrate;

arranging a first mask on one side, far away from the substrate, of the gate insulating layer, wherein an opening area of the first mask corresponds to the first channel, and a non-opening area of the first mask corresponds to the second channel;

implanting hydrogen ions into the first channel with a third dose and a third doping energy;

removing the first mask; arranging a second mask on one side of the gate insulating layer, which is far away from the substrate, wherein an opening area of the second mask corresponds to the second channel, and a non-opening area of the second mask corresponds to the first channel;

implanting hydrogen ions into the second channel with a fourth dose and a fourth doping energy.

6. The method of claim 5, wherein the first channel is a channel of a driving transistor, the second channel is a channel of a switching transistor, the third dose is less than the fourth dose, and the third doping energy is less than the fourth doping energy.

7. The method of claim 5, wherein the third dose is in a range of 1E +12ions/cm2 or less, the fourth dose is in a range of 3E + 12-5E +12ions/cm2, and the third doping energy and the fourth doping energy are in a range of 5KV-10 KV.

8. The method of manufacturing according to claim 1, further comprising, after forming the trench on the substrate:

and implanting fluorine ions into the channel.

9. The method of claim 8, wherein the fluorine ion implantation dose is 1E + 12-2E +12ions/cm2 and the doping energy is 10 KV.

10. A display panel produced by the method for producing a display panel according to any one of claims 1 to 9.