阅读说明：本技术 一种存储单元的编程方法、装置、电子设备及存储介质 (programming method and device of storage unit, electronic equipment and storage medium ) 是由 贺元魁 潘荣华 史兵 于 2018-06-01 设计创作，主要内容包括：本发明公开了一种存储单元的编程方法,该方法包括：采用第一类编程电压对编程区域中除编程校验通过的存储单元之外的存储单元执行第一轮编程操作；当设定等级的存储单元编程校验通过时,记录当前次编程循环采用的编程电压值；或者,当所述第一次编程操作中编程循环的次数达到设定阈值时,记录最后一次编程循环采用的编程电压值；采用以所述编程电压值为初始值的第二类编程电压对编程区域中除编程校验通过的存储单元之外的存储单元执行第二轮编程操作；其中,存储单元的等级依据存储单元的目标阈值电压的分布范围划分。通过采用上述技术方案实现了快速将存储单元的阈值电压抬升到较高区域,节省了编程时间,提高了编程性能。(The invention discloses a programming method of a storage unit, which comprises the following steps: performing a first round of programming operation on the memory cells in the programming region except the memory cells passing the program verification by adopting a first type of programming voltage; when the programming verification of the memory unit with the set level passes, recording a programming voltage value adopted by the current programming cycle; or when the number of programming cycles in the first programming operation reaches a set threshold, recording the programming voltage value adopted by the last programming cycle; performing a second round of programming operation on the memory cells except the memory cells passing the program verification in the programming region by using a second type of programming voltage taking the programming voltage value as an initial value; the grades of the memory cells are divided according to the distribution range of the target threshold voltage of the memory cells. By adopting the technical scheme, the threshold voltage of the memory unit is quickly raised to a higher area, the programming time is saved, and the programming performance is improved.)

1. A method of programming a memory cell, comprising:

performing a first round of programming operation on the memory cells in the programming region except the memory cells passing the program verification by adopting a first type of programming voltage;

when the programming verification of the memory unit with the set level passes, recording a programming voltage value adopted by the current programming cycle; or when the number of programming cycles in the first round of programming operation reaches a set threshold, recording the programming voltage value adopted by the last programming cycle;

Performing a second round of programming operation on the memory cells except the memory cells passing the program verification in the programming region by using a second type of programming voltage taking the programming voltage value as an initial value;

the grades of the memory cells are divided according to the distribution range of the target threshold voltage of the memory cells.

2. the method of claim 1, wherein performing a first round of programming operations on memory cells in the programming region other than memory cells that pass program verification using the first type of programming voltage comprises:

Performing a one-time programming operation on memory cells except for memory cells passing program verification in the programming region by using a specific programming voltage;

carrying out programming verification on the memory cells with the set levels;

If the programming verification of the memory unit of the set level is not passed, increasing the programming voltage adopted by the current programming cycle by a set value to obtain a new programming voltage required by the next programming cycle so as to update the specific programming voltage;

Repeating the programming cycle operation by adopting the new programming voltage until the programming verification of the memory unit of the set grade passes or the number of programming cycles reaches a set threshold value;

wherein, the one-time programming cycle comprises executing one-time programming operation and one-time programming verification.

3. the method of claim 2, wherein the program verifying the memory cell of the set level comprises:

Performing programming verification on the memory cells of the set grade one by one, and shielding the memory cells passing the programming verification;

And if the memory cells with the program verification failed exist in the memory cells with the set level, determining that the memory cells with the set level have the program verification failure.

4. the method of claim 2, wherein the program verifying the memory cell of the set level comprises:

performing programming verification on a memory cell with the lowest grade in the memory cells with the set grade, and if the programming verification is not passed, determining that the programming verification of the memory cell with the set grade is not passed;

if the program verification passes, shielding the storage unit, performing program verification on the storage unit with the lowest grade in other storage units except the storage unit with the passed verification in the storage units with the set grade, and repeating the judgment operation of the program verification;

And when the program verification of all the memory cells of the set level passes, determining that the program verification of the memory cells of the set level passes.

5. the method of claim 1, wherein performing a second round of programming operations on memory cells in the programming region except for memory cells that pass program verification using a second type of programming voltage with the programming voltage value as an initial value comprises:

performing one-time programming operation on the memory cells except the memory cells passing the programming verification in the programming region by using the programming voltage value;

performing program verification on memory cells in the program area except for the memory cells passing the program verification;

if the program verification is not passed, increasing the set value of the programming voltage adopted by the current programming cycle to obtain a new programming voltage required by the next programming cycle so as to update the programming voltage value;

And repeating the program circulation operation by using the new program voltage until the program verification is passed.

6. the method of claim 5, wherein performing program verification on memory cells in the program area other than memory cells that pass program verification comprises:

performing program verification on the memory cells except the memory cells passing the program verification in the programming region one by one, and shielding the memory cells passing the program verification;

And if the memory cells which do not pass the program verification exist, determining that the program verification does not pass.

7. The method of any of claims 1-6, wherein the memory cells of the set level are memory cells in a lower range of a target threshold voltage distribution in a programming region.

8. An apparatus for programming a memory cell, the apparatus comprising:

the first programming module is used for executing a first round of programming operation on the memory cells in the programming region except the memory cells passing the programming verification by adopting a first type of programming voltage;

the recording module is used for recording a programming voltage value adopted by the current programming cycle when the programming verification of the memory unit with the set level passes; or when the number of programming cycles in the first round of programming operation reaches a set threshold, recording the programming voltage value adopted by the last programming cycle;

The second programming module is used for executing a second round of programming operation on the memory cells except the memory cells passing the programming verification in the programming region by adopting a second type of programming voltage taking the programming voltage value as an initial value;

The grades of the memory cells are divided according to the distribution range of the target threshold voltage of the memory cells.

9. an electronic device comprising a first memory, a first processor and a computer program stored on the memory and executable on the first processor, characterized in that the first processor implements the method of programming a memory unit according to any of claims 1-7 when executing the computer program.

10. A storage medium containing computer-executable instructions which, when executed by a computer processor, implement a method of programming a storage unit according to any one of claims 1-7.

Technical Field

The embodiment of the invention relates to the technical field of storage, in particular to a programming method and device of a storage unit, electronic equipment and a storage medium.

Background

A Nand flash Memory (Nand flash) is a common Memory chip, has the advantages of a Random Access Memory (RAM) and a Read-Only Memory (ROM), does not lose data when power is lost, is a Memory capable of performing electrical erasing in a system, has the advantages of high rewriting speed, large storage capacity and the like, and is widely applied to electronic products. According to the division of the number of bits of data stored in each memory Cell, Nand flash can be divided into three types, namely SLC (Single-Level Cell), MLC (Multi-Level Cell), and TLC (Triple-Level Cell), wherein each memory Cell of SLC stores one-bit (1bit) of data, each memory Cell of MLC stores 2bit of data, and each memory Cell of TLC stores 3bit of data. The data storage is realized by controlling the distribution of the threshold voltage of the memory cell, and in particular, referring to a schematic diagram of the threshold voltage distribution of the memory cell of TLC shown in fig. 1, when the threshold voltage of the memory cell falls in an a region, it indicates that the data currently stored by the memory cell is 001, when the threshold voltage of the memory cell falls in a B region, it indicates that the data currently stored by the memory cell is 010, and when the threshold voltage of the memory cell falls in a G region, it indicates that the data currently stored by the memory cell is 111.

therefore, to achieve proper data storage of the TLC storage unit, the threshold distribution of the storage unit needs to be controlled by a complex algorithm. Referring to fig. 1, the levels of all the memory cells of the program area include seven levels a to G, the levels a to G of the memory cells are divided according to the distribution range of the target threshold voltages of the memory cells, and the higher the distribution range of the target threshold voltages is, the higher the level of the corresponding memory cells is. In the prior art, when programming a TLC memory cell, it is generally divided into 2-3 rounds of programming, where the 1 st round of programming is a coarse programming, which aims to raise the threshold voltage of the memory cell to a relatively high range, and the 2 nd-3 rd round of programming is a finer programming, which eventually achieves the purpose of distinguishing the threshold voltage of the memory cell from a-G7 states. The initial voltage applied to the word line of the memory cell is generally constant during the 2 nd to 3 rd programming rounds, and the initial voltage is generally low, so the programming time is long.

Disclosure of Invention

The invention provides a programming method and device of a storage unit, electronic equipment and a storage medium, which can quickly raise the threshold voltage of the storage unit to a higher region, shorten the programming time and improve the programming performance.

In order to achieve the above purpose, the embodiment of the invention adopts the following technical scheme:

In a first aspect, an embodiment of the present invention provides a method for programming a memory cell, where the method includes:

Performing a first round of programming operation on the memory cells in the programming region except the memory cells passing the program verification by adopting a first type of programming voltage;

When the programming verification of the memory unit with the set level passes, recording a programming voltage value adopted by the current programming cycle; or when the number of programming cycles in the first round of programming operation reaches a set threshold, recording the programming voltage value adopted by the last programming cycle;

performing a second round of programming operation on the memory cells except the memory cells passing the program verification in the programming region by using a second type of programming voltage taking the programming voltage value as an initial value;

the grades of the memory cells are divided according to the distribution range of the target threshold voltage of the memory cells.

Further, the performing a first round of programming operations on the memory cells in the programming region except for the memory cells passing the program verification by using the first type of programming voltage includes:

Performing a one-time programming operation on memory cells except for memory cells passing program verification in the programming region by using a specific programming voltage;

carrying out programming verification on the memory cells with the set levels;

If the programming verification of the memory unit of the set level is not passed, increasing the programming voltage adopted by the current programming cycle by a set value to obtain a new programming voltage required by the next programming cycle so as to update the specific programming voltage;

Repeating the programming cycle operation by adopting the new programming voltage until the programming verification of the memory unit of the set grade passes or the number of programming cycles reaches a set threshold value;

wherein, the one-time programming cycle comprises executing one-time programming operation and one-time programming verification.

further, the performing program verification on the memory cell of the set rank includes:

Performing programming verification on the memory cells of the set grade one by one, and shielding the memory cells passing the programming verification;

And if the memory cells with the program verification failed exist in the memory cells with the set level, determining that the memory cells with the set level have the program verification failure.

further, the performing program verification on the memory cell of the set rank includes:

Performing programming verification on a memory cell with the lowest grade in the memory cells with the set grade, and if the programming verification is not passed, determining that the programming verification of the memory cell with the set grade is not passed;

If the program verification passes, shielding the storage unit, performing program verification on the storage unit with the lowest grade in other storage units except the storage unit with the passed verification in the storage units with the set grade, and repeating the judgment operation of the program verification;

and when the program verification of all the memory cells of the set level passes, determining that the program verification of the memory cells of the set level passes.

Further, the performing a second round of programming operations on the memory cells in the programming region except for the memory cells passing the program verification by using a second type of programming voltage with the value of the programming voltage as an initial value includes:

Performing one-time programming operation on the memory cells except the memory cells passing the programming verification in the programming region by using the programming voltage value;

Performing program verification on memory cells in the program area except for the memory cells passing the program verification;

if the program verification is not passed, increasing the set value of the programming voltage adopted by the current programming cycle to obtain a new programming voltage required by the next programming cycle so as to update the programming voltage value;

And repeating the program circulation operation by using the new program voltage until the program verification is passed.

Further, the program verifying the memory cells in the program area except the memory cells that pass the program verifying includes:

Performing program verification on the memory cells except the memory cells passing the program verification in the programming region one by one, and shielding the memory cells passing the program verification;

and if the memory cells which do not pass the program verification exist, determining that the program verification does not pass.

further, the memory cells of the set level are the memory cells of the program area with the target threshold voltage distribution in the lower range.

In a second aspect, an embodiment of the present invention provides an apparatus for programming a memory cell, the apparatus including:

the first programming module is used for executing a first round of programming operation on the memory cells in the programming region except the memory cells passing the programming verification by adopting a first type of programming voltage;

The recording module is used for recording a programming voltage value adopted by the current programming cycle when the programming verification of the memory unit with the set level passes; or when the number of programming cycles in the first round of programming operation reaches a set threshold, recording the programming voltage value adopted by the last programming cycle;

the second programming module is used for executing a second round of programming operation on the memory cells except the memory cells passing the programming verification in the programming region by adopting a second type of programming voltage taking the programming voltage value as an initial value;

the grades of the memory cells are divided according to the distribution range of the target threshold voltage of the memory cells.

In a third aspect, an embodiment of the present invention provides an electronic device, which includes a first memory, a first processor, and a computer program stored in the memory and executable on the first processor, where the first processor implements the method for programming the memory unit according to the first aspect when executing the computer program.

In a fourth aspect, embodiments of the present invention provide a storage medium containing computer-executable instructions which, when executed by a computer processor, implement a method of programming a storage unit as described in the first aspect above.

according to the programming method of the memory unit provided by the embodiment of the invention, when the programming verification of the memory unit with the set level passes, the programming voltage value adopted by the current programming cycle is recorded; or when the number of programming cycles in the first round of programming operation reaches a set threshold, recording the programming voltage value adopted by the last programming cycle; and the technical means of executing the second round of programming operation on the memory units in the programming region except the memory unit passing the programming verification by adopting the second type of programming voltage taking the programming voltage value as the initial value is adopted, so that the threshold voltage of the memory unit is quickly raised to a higher region, the programming time is saved, and the programming performance is improved.

Drawings

FIG. 1 is a schematic diagram of a TLC memory cell threshold voltage distribution;

FIG. 2 is a flow chart illustrating a method for programming a memory cell according to one embodiment of the present invention;

FIG. 3 is a flowchart illustrating a method for programming a memory cell according to a second embodiment of the present invention;

FIG. 4 is a schematic diagram illustrating a programming process of a memory cell according to a second embodiment of the present invention;

FIG. 5 is a flowchart illustrating a method for programming a memory cell according to a third embodiment of the present invention;

FIG. 6 is a flowchart illustrating a method for programming a memory cell according to a third embodiment of the present invention;

FIG. 7 is a structural diagram of a programming device for a memory cell according to a fourth embodiment of the present invention;

Fig. 8 is a schematic structural diagram of an electronic device according to a fifth embodiment of the present invention.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only the structures related to the present invention are shown in the drawings, not all of them.