阅读说明：本技术 一种高抑制度电路结构及高隔离度双工器、多工器 (High-inhibition-degree circuit structure, high-isolation-degree duplexer and multiplexer ) 是由 王刚 董元旦 杨涛 马增红 于 2021-08-09 设计创作，主要内容包括：本发明涉及通信技术领域,具体涉及一种高抑制度电路结构及高隔离度双工器、多工器,包括带阻电路和带通电路,所述带阻电路和带通电路均由声波滤波器和匹配单元组成,所述带阻电路包括第一输入端、第一输出端、第一串联谐振器组、第一并联谐振器组以及分别设置在靠近所述第一输入端、第一输出端的第一匹配电感、第二匹配电感,所述带通电路包括第二输入端、第二输出端、第二串联谐振器组、第二并联谐振器组以及分别设置在靠近所述第二输入端、第二输出端的第三匹配电感、第四匹配电感,所述第一输出端与第二输入端连接,所述第二匹配电感与第三匹配电感融合为独立匹配电感,以实现较高的抑制度,提升通信质量。(The invention relates to the technical field of communication, in particular to a high-suppression circuit structure, a high-isolation duplexer and a multiplexer, which comprise a band-stop circuit and a band-pass circuit, wherein the band-stop circuit and the band-pass circuit are respectively composed of an acoustic wave filter and a matching unit, the band-stop circuit comprises a first input end, a first output end, a first series resonator group, a first parallel resonator group, a first matching inductor and a second matching inductor which are respectively arranged close to the first input end and the first output end, the band-pass circuit comprises a second input end, a second output end, a second series resonator group, a second parallel resonator group, a third matching inductor and a fourth matching inductor which are respectively arranged close to the second input end and the second output end, the first output end is connected with the second input end, and the second matching inductor and the third matching inductor are fused into an independent matching inductor, so as to realize higher suppression degree and improve the communication quality.)

1. A high suppression circuit structure, characterized by: including band stop circuit and band-pass circuit, band stop circuit and band-pass circuit constitute by acoustic wave filter and matching unit, band stop circuit includes first input end, first output end, first series resonator group, first parallel resonator group and sets up respectively and is being close to first input end, the first output end first match inductance, second match inductance, band-pass circuit includes second input end, second output end, second series resonator group, second parallel resonator group and sets up respectively and is being close to the second input end, the second output end third match inductance, the fourth match inductance, first output end is connected with the second input end, the second matches inductance and the third matches the inductance and fuses to independently match the inductance.

2. A highly suppressing circuit structure as defined in claim 1, wherein: the acoustic wave filter is a surface acoustic wave filter or a bulk acoustic wave filter or a film cavity acoustic wave filter.

3. A highly suppressing circuit structure as defined in claim 2, wherein: and the inductance value of the independent matching inductor is equal to the equivalent value of the second matching inductor and the third matching inductor after series connection or parallel connection.

4. A highly suppressing circuit structure as defined in claim 3, wherein: when the circuit structure is applied to filter manufacturing, the independent matching inductor is arranged on the substrate.

5. A highly suppressing circuit structure as defined in claim 1, wherein: the first series resonator group includes a first series resonator, the first parallel resonator group includes a first parallel resonator, a second parallel resonator, the first series resonator is disposed between the first parallel resonator and the second parallel resonator, and the first matching inductance is disposed between the first input terminal and the first parallel resonator.

6. The high suppression circuit structure of claim 5, wherein: the second series resonator group comprises a second series resonator, a third series resonator and a fourth series resonator, the second parallel resonator group comprises a third parallel resonator and a fourth parallel resonator, and the fourth matching inductor is arranged between the fourth series resonator and the second output end.

7. The high suppression circuit structure of claim 6, wherein: the independent matching inductance is disposed between the second parallel resonator and the second series resonator.

8. A high isolation duplexer, characterized in that: the duplexer comprising a circuit arrangement as claimed in any of the claims 1-7.

9. A high isolation multiplexer, comprising: the multiplexer comprising the circuit arrangement according to any of claims 1-7.

Technical Field

The invention belongs to the technical field of communication, and particularly relates to a high-suppression circuit structure, a high-isolation duplexer and a multiplexer.

Background

In order to achieve high isolation and achieve good suppression in a certain frequency band, a common acoustic wave filter is generally configured to add a capacitor and an inductor on a substrate, and is limited by a Q value of a resonator thereof, so that it is difficult to achieve a high suppression degree.

Disclosure of Invention

The invention provides a high-suppression-degree circuit structure which solves the problems and comprises a band elimination circuit and a band-pass circuit, wherein the band elimination circuit and the band-pass circuit are both composed of an acoustic wave filter and a matching unit, the band elimination circuit comprises a first input end, a first output end, a first series resonator group, a first parallel resonator group, a first matching inductor and a second matching inductor, the first matching inductor and the second matching inductor are respectively arranged close to the first input end and the first output end, the band-pass circuit comprises a second input end, a second output end, a second series resonator group, a second parallel resonator group, a third matching inductor and a fourth matching inductor, the third matching inductor and the fourth matching inductor are respectively arranged close to the second input end and the second output end, the first output end is connected with the second input end, and the second matching inductor and the third matching inductor are fused into an independent matching inductor.

Preferably, the acoustic wave filter is a surface acoustic wave filter or a bulk acoustic wave filter or a thin film cavity acoustic wave filter.

Preferably, the inductance value of the independent matching inductor is equal to the equivalent value of the second matching inductor and the third matching inductor after being connected in series or in parallel.

Preferably, when the circuit structure is applied to filter manufacturing, the independent matching inductor is arranged on the substrate.

Preferably, the first series resonator group includes a first series resonator, the first parallel resonator group includes a first parallel resonator and a second parallel resonator, the first series resonator is disposed between the first parallel resonator and the second parallel resonator, and the first matching inductor is disposed between the first input terminal and the first parallel resonator.

Preferably, the second series resonator group includes a second series resonator, a third series resonator, and a fourth series resonator, the second parallel resonator group includes a third parallel resonator and a fourth parallel resonator, and the fourth matching inductor is disposed between the fourth series resonator and the second output terminal.

Preferably, the independent matching inductance is provided between the second parallel resonator and the second series resonator.

The invention also provides a high-isolation duplexer, which comprises the circuit structure.

The invention also provides a high-isolation multiplexer, which comprises the circuit structure.

The invention has the following beneficial effects: the high-suppression circuit structure mainly comprises a band-pass circuit and a band-stop circuit which are composed of acoustic wave filters, and matching inductors are added in the band-pass circuit and the band-stop circuit to achieve a high suppression degree and improve communication quality.

Drawings

FIG. 1 is a schematic diagram of a circuit model of a band-stop circuit according to an embodiment of the invention;

FIG. 2 is a schematic diagram of an S-parameter curve of a band-stop circuit model in an embodiment of the invention;

FIG. 3 is a schematic diagram of a circuit model of a bandpass circuit according to an embodiment of the invention;

FIG. 4 is a diagram illustrating an S-parameter curve of a band-pass circuit model according to an embodiment of the present invention;

FIG. 5 is a schematic diagram of an overall circuit configuration according to an embodiment of the present invention;

fig. 6 is a schematic diagram of an S-parameter curve of an overall circuit structure according to an embodiment of the present invention.

10-a band-stop circuit; 11-a first input; 12-a first output; 13-a first series resonator; 14-a first parallel resonator; 15-a second parallel resonator; 16-a first matching inductance; 17-a second matching inductance; 20-a band pass circuit; 21-a second input; 22-a second output; 23-a second series resonator; 24-a third series resonator; 25-a fourth series resonator; 26-a third parallel resonator; 27-a fourth parallel resonator; 28-third matching inductance; 29-a fourth matching inductance; 31-independent matching inductance.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Unless otherwise specified, the technical means used in the examples are conventional means well known to those skilled in the art.

As shown in fig. 1-6, a high-suppression circuit structure includes a band-stop circuit 10 and a band-pass circuit 20, where the band-stop circuit 10 and the band-pass circuit 20 are both composed of an acoustic wave filter and a matching unit, the band-stop circuit 10 includes a first input end 11, a first output end 12, a first series resonator 13 group, a first parallel resonator 14 group, and a first matching inductor 16 and a second matching inductor 17 respectively disposed near the first input end 11 and the first output end 12, the band-pass circuit 20 includes a second input end 21, a second output end 22, a second series resonator 23 group, a second parallel resonator 15 group, and a third matching inductor 28 and a fourth matching inductor 29 respectively disposed near the second input end 21 and the second output end 22, the first output end 12 is connected to the second input end 21, the second matching inductor 17 and the third matching inductor 28 are fused into an independent matching inductor 31, the first input 11 and the second output 22 are respectively an input and an output of the overall circuit.

The band rejection circuit 10 may also be a high pass circuit or a low pass circuit, and in the band rejection circuit 10 and the band pass circuit 20, the structure of the series resonator combined parallel resonator group is set according to specific communication requirements, which is common technical knowledge of those skilled in the art and will not be described herein.

The band-stop circuit 10 and the band-pass circuit 20 realize low-loss transmission in a transmission passband, the rejection stop band is divided into two sections of stop bands close to the transmission passband and far away from the transmission passband, the band-stop circuit 10 realizes secondary rejection of the stop band close to the transmission passband and partial rejection of the stop band far away from the transmission passband, the band-pass circuit 20 realizes main rejection of the stop band close to the transmission passband and partial rejection of the stop band far away from the transmission passband, after the two circuits are cascaded, the low-loss transmission is superposed in the transmission passband, and the stop band is superposed into a high rejection degree on the whole stop band.

Compared with the common mode of adding the capacitor and the inductor on the substrate in the prior art, the circuit structure directly constructed by the acoustic wave filter is easier to realize high suppression degree, and a feasible implementation scheme is provided.

Preferably, the acoustic wave filter is a surface acoustic wave filter, a bulk acoustic wave filter or a thin film cavity acoustic wave filter, that is, the circuit structure can be implemented by using various filters, and the acoustic wave filter can be freely selected based on the function of the circuit structure.

Preferably, the inductance value of the independent matching inductor 31 is equal to the equivalent value of the second matching inductor 17 and the third matching inductor 28 after being connected in series or in parallel.

Preferably, when the circuit structure is applied to filter fabrication, the independent matching inductor 31 is disposed on the substrate.

The high-suppression-degree circuit structure is formed by cascading the band-stop circuit 10 and the band-pass circuit 20, wherein the second matching inductor 17 and the third matching inductor 28 are located at a connection point, and according to a connection mode between the second matching inductor 17 and the third matching inductor 28 and a current circuit, for example, the two matching inductors are series inductors, an inductance value of the independent matching inductor 31 is an equivalent value of the two matching inductors after the two matching inductors are connected in series, and during specific manufacturing, the independent matching inductor 31 is arranged on a substrate, for example, the two inductors are parallel inductors, the inductance value is 2nH, the inductance value of the independent matching inductor 31 is 1nH, at this time, an inductor of 1nH can be directly wound on the substrate, and the first matching inductor 16 and the fourth matching inductor 29 can be implemented by adopting a patch coil or the like.

Preferably, the first series resonator 13 group includes a first series resonator 13, the first parallel resonator 14 group includes a first parallel resonator 14 and a second parallel resonator 15, the first series resonator 13 is disposed between the first parallel resonator 14 and the second parallel resonator 15, and the first matching inductor 16 is disposed between the first input terminal 11 and the first parallel resonator 14.

Preferably, the second series resonator 23 group includes a second series resonator 23, a third series resonator 24, and a fourth series resonator 25, the second parallel resonator 15 group includes a third parallel resonator 26 and a fourth parallel resonator 27, and a fourth matching inductor 29 is provided between the fourth series resonator 25 and the second output terminal 22.

Preferably, the independent matching inductance 31 is provided between the second parallel resonator 15 and the second series resonator 23.

Taking the transmitting filter of band8 as an example, the band elimination circuit 10 includes a first input end 11, a first output end 12, a first series resonator 13, a first parallel resonator 14, a second parallel resonator 15, and a first matching inductor 16 and a second matching inductor 17 respectively disposed near the first input end 11 and the first output end 12, the band pass circuit 20 includes a second input end 21, a second output end 22, a second series resonator 23, a third series resonator 24, a fourth series resonator 25, a third parallel resonator 26, a fourth parallel resonator 27, and a third matching inductor 28 and a fourth matching inductor 29 respectively disposed near the second input end 21 and the second output end 22, when the band pass circuit and the band elimination circuit 10 are cascaded, an independent matching inductor 31 formed by fusing the second matching inductor 17 and the third matching inductor 28 is disposed between the second parallel resonator 15 and the second series resonator 23, wherein the resonator parameters of the band stop circuit 10 and the band pass circuit 20 are as follows:

resonator having a dielectric layer	Frequency of	Static capacitor
			First series resonator	923MHz	5.3pF
First parallel resonator	945MHz	2.3pF
			Second parallel resonator	934MHz	2.3pF
Second series resonator	892MHz	5.8pF
			Third series resonator	896MHz	1.6pF
Fourth series resonator	891MHz	7.4pF
			Third parallel resonator	855MHz	6.3pF
Fourth parallel resonator	855MHz	6.3pF

The band elimination circuit 10 realizes low-loss transmission of 814MHz-915MHz of a transmission passband, the inhibition stop band 925MHz-960MHz is divided into a near-end stop band 925MHz-935MHz close to the transmission passband and a far-end stop band 935MHz-960MHz far away from the transmission passband, and the band elimination circuit 10 realizes secondary inhibition of the near-end stop band and partial inhibition of the far-end stop band.

The band-pass circuit 20 realizes low-loss transmission of 814MHz-915MHz of transmission passband, the inhibition stop band 925MHz-960MHz is divided into a near-end stop band 925MHz-935MHz close to the transmission passband and a far-end stop band 935MHz-960MHz far away from the transmission passband, and the band-pass circuit 20 realizes main inhibition of the near-end stop band and partial inhibition of the far-end stop band.

After the band elimination circuit 10 and the band-pass circuit 20 are cascaded, the low-loss transmission of the band elimination circuit and the band-pass circuit in the transmission passband 814MHz-915MHz is superposed into the low-loss transmission of the whole circuit in the transmission passband 814MHz-915MHz, and the inhibition degree of the band elimination circuit and the band-pass circuit in the near-end stopband 925MHz-935MHz is superposed into the high inhibition degree of the whole circuit in the near-end stopband 925MHz-935 MHz; the inhibition degrees of the two at the far-end stop band of 935MHz-960MHz are superposed into the high inhibition degree of the whole circuit at the far-end stop band of 935MHz-960MHz, namely the high inhibition degree of the stop band is actually realized.

In fig. 6, a curve 1 is an S-parameter transmission curve of the band-stop circuit 10, a curve 2 is an S-parameter transmission curve of the band-pass circuit 20, and a curve 3 is an S-parameter transmission curve of the whole circuit after the two are cascaded.

The invention also provides a high-isolation duplexer, which comprises the circuit structure.

The invention also provides a high-isolation multiplexer, which comprises the circuit structure.

The high-inhibition circuit structure is applied to the duplexer and the multiplexer, and the duplexer and the multiplexer have higher isolation degree by the high inhibition degree.

The above embodiments are merely illustrative of the preferred embodiments of the present invention, and do not limit the scope of the present invention, and those skilled in the art should make various changes, modifications, alterations, and substitutions on the technical solution of the present invention without departing from the spirit of the present invention, which falls within the protection scope defined by the claims of the present invention.