阅读说明：本技术 用于长晶炉的溶液移除装置及其移除方法、长晶炉和溶液移除方法 (Solution removing device for crystal growth furnace, removing method of solution removing device, crystal growth furnace and solution removing method ) 是由 黎志欣 胡动力 于 2021-06-19 设计创作，主要内容包括：本发明公开了一种用于长晶炉的溶液移除装置及其移除方法,长晶炉包括主室,主室内容纳有承载溶液的坩埚,溶液移除装置包括：吸附装置,吸附装置设置在坩埚上方,并可相对于坩埚升降,吸附装置包括具有吸附能力的耐高温无污染的吸附材料,吸附材料能对坩埚中的溶液进行吸附,使得溶液作为附着物附着在吸附材料上。通过直接吸附的方法,将溶液吸附在吸附材料上,从而有效的将富含大量杂质的溶液移除,提升后续晶棒的品质,且该装置操作简单方便,可有效提高效率,节省人力和时间成本。(The invention discloses a solution removing device and a removing method for a crystal growth furnace, wherein the crystal growth furnace comprises a main chamber, a crucible for bearing solution is contained in the main chamber, and the solution removing device comprises: adsorption equipment, adsorption equipment sets up in the crucible top to can go up and down for the crucible, adsorption equipment includes the high temperature resistant pollution-free adsorbing material that has adsorption capacity, and the adsorbing material can adsorb the solution in the crucible, makes the solution adhere to on adsorbing material as the attachment. Through direct adsorption's method, adsorb solution on adsorbing material to effectual solution that will be rich in a large amount of impurities removes, promotes the quality of follow-up crystal bar, and the device easy operation is convenient, can effectively raise the efficiency, uses manpower sparingly and time cost.)

1. A solution removing device for a crystal growth furnace including a main chamber in which a crucible carrying a solution is accommodated, characterized by comprising:

the adsorption device is arranged above the crucible and can lift relative to the crucible, the adsorption device comprises a high-temperature-resistant pollution-free adsorption material with adsorption capacity, and the adsorption material can adsorb the solution in the crucible so that the solution is attached to the adsorption material as an attachment.

2. The solution removing device for the crystal growth furnace according to claim 1, wherein the adsorbing material is a quartz fiber cloth.

3. The solution removing device for a crystal growth furnace according to claim 1, wherein the adsorption device further comprises a porous quartz plate disposed below the adsorption material.

4. The solution removing device for the crystal growth furnace according to claim 1, wherein the solution removing device further comprises:

and the storage device is arranged above the adsorption device, and a storage space is limited in the storage device and used for storing the adsorption device after the solution is adsorbed.

5. The solution removing device for the crystal growth furnace according to claim 4, wherein an isolating component which is opened and closed in a one-way direction is arranged in the storage device, and the isolating component prevents the adsorption device from falling into the crucible after the adsorption device enters the storage device.

6. The solution removing device for the crystal growth furnace according to claim 5, wherein the isolation assembly comprises a one-way hinge and an isolation plate, the isolation plate is arranged at the lower end of the storage device, the isolation plate is connected with the storage device through the one-way hinge, and the number of the isolation plate is more than two.

7. A solution removing method using the solution removing apparatus for a crystal growth furnace according to any one of claims 1 to 6, characterized by comprising the steps of:

s101: immersing the adsorption device into a certain height of the solution in the crucible;

s102: and after a certain period of adsorption, removing the adsorption device out of the crucible.

8. The solution removal method according to claim 7, further comprising S103: and replacing the new adsorbing material, and repeating the steps of S101 and S102.

9. A crystal growth furnace comprising a main chamber in which a crucible carrying a solution is accommodated, a sub-chamber disposed above the main chamber, a communication port disposed below the sub-chamber, and a communication port disposed above the main chamber, and a pulling device disposed above the sub-chamber, the pulling device being accessible into the main chamber through the communication port below the sub-chamber and the communication port of the main chamber, wherein the crystal growth furnace further comprises a solution removing device as set forth in any one of claims 1 to 6, the solution removing device being adapted to be connected to the pulling device so that the solution removing device can be raised or lowered with respect to the crucible by the pulling device.

10. The crystal growth furnace according to claim 9, wherein a throat is provided on the sub-chamber, the throat is provided at a joint of the main chamber and the sub-chamber, a limiting device adapted to the throat is provided on the storage device, the pulling wire adapted to the pulling device is provided above the adsorption device, the connecting wire adapted to the pulling wire is provided above the storage device, a clamping point is provided on the pulling wire, and the connecting wire on the storage device can be limited on the pulling wire by the clamping point.

11. A solution removing method using the crystal growth furnace of claim 9 or 10, characterized by comprising the steps of:

s1: mounting the storage device on the adsorption device through the connection line on the storage device, and mounting the solution removal device on the pulling device through the pulling line;

s2: lowering the lifting device until the limiting device on the storage device is suitable for being fixed on the throat;

s3: further lowering the pulling device so that the adsorption device is immersed to a certain height in the crucible solution;

s4: after a certain period of adsorption, lifting the adsorption device to lift the adsorption device into the storage device;

s5: and further lifting the adsorption device until the clamping point drives the connecting line to lift the storage device, and simultaneously removing the storage device and the adsorption device from the auxiliary chamber.

12. The solution removal method of claim 11, further comprising S6: the adsorption apparatus is replaced with a new one, and the steps of S1 and S5 are repeated.

Technical Field

The invention relates to the field of crystal growth, in particular to a solution removing device for a crystal growth furnace and a removing method thereof, the crystal growth furnace and the solution removing method.

Background

Along with the technical breakthroughs of a large charging technology (a thermal field is increased to 36 inches), a long-service-life crucible, a high pulling speed (a water-cooling heat shield), smoothness of exhaust (multi-filter tank cooperative operation) and the like, the working time of each furnace of the single crystal furnace reaches more than 450 hours, the total charging amount is more than 3.5 tons, more than 8 crystal bars of a single crystal silicon rod can be pulled by one furnace, and the effect is improvedCost reduction is the direction of efforts for single crystal growth. But after repeated crystal pulling and charging, the segregation coefficient of the metal is 10^-4In the following, some residual solution is remained in the crucible during each drawing, and the metal impurities of the solution are enriched, so that the quality of the crystal is gradually reduced along with the increase of the number of crystal pulling roots, the minority carrier lifetime is gradually reduced, and the development of the long-time operation technology of the large charge is severely restricted.

The existing crucible bed charge solution removing technology generally adopts a differential pressure method material sucking technology, a high-purity quartz tube or a ceramic suction tube or suction nozzle is used, and the solution is sucked into a storage container by utilizing the pressure difference between the storage container and a main chamber of a single crystal furnace, but in the actual process, after the solution is sucked into the storage container by the suction tube or the suction nozzle, silicon liquid is solidified, the suction tube or the suction nozzle can be broken and can only be used for one time.

Disclosure of Invention

In order to solve the above problems, an object of the present invention is to provide a solution removing apparatus for a crystal growth furnace and a removing method thereof, which can effectively remove a solution, and has the advantages of simple operation, low cost, and effectively prolonging the minority carrier lifetime of a crystal bar by a multiple feeding technique.

In one aspect of the present invention, there is disclosed a solution removing apparatus for a crystal growth furnace, the crystal growth furnace including a main chamber in which a crucible carrying a solution is accommodated, the solution removing apparatus comprising:

adsorption equipment, adsorption equipment sets up in the crucible top to can go up and down for the crucible, adsorption equipment includes the high temperature resistant pollution-free adsorbing material that has adsorption capacity, and the adsorbing material can adsorb the solution in the crucible, makes the solution adhere to on adsorbing material as the attachment.

From this, through direct adsorbed method, adsorb residual solution on adsorbing material to effectual solution that will be rich in a large amount of impurities removes, promotes the quality of follow-up crystal bar, and the device easy operation is convenient, can effectively raise the efficiency, uses manpower sparingly and time cost.

In some specific embodiments, the adsorbent material is a quartz fiber cloth.

In some specific embodiments, the adsorbent material is provided in a variety of shapes, including sheets, cylinders, spiral cylinders, polygonal bodies, spiral polygonal bodies, and the like.

In some specific embodiments, the adsorbent material is provided in the shape of a spiral cylinder, the spiral cylinder having a uniform pitch.

In some specific embodiments, the adsorbing material is provided in the shape of a spiral cylinder, the distance between the spiral cylinders gradually increases from the center to the edge, the distance between the spiral cylinders is small, and the distance between the spiral cylinders is large.

In some specific embodiments, the adsorption apparatus further comprises a porous quartz plate disposed below the adsorption material.

In some specific embodiments, the solution removing device further comprises: storage device, storage device set up in the adsorption equipment top, and it has storage space to inject in the storage device for store the adsorption equipment after having adsorbed solution.

In some specific embodiments, a one-way opening and closing isolation component is arranged in the storage device, and the isolation component prevents the adsorption device from falling into the crucible after the adsorption device enters the storage device.

In some specific embodiments, the isolation assembly comprises a one-way hinge and an isolation plate, the isolation plate is arranged at the lower end of the storage device and connected with the storage device through the one-way hinge, the isolation plate is connected with the storage device through the one-way hinge, and the number of the isolation plates is more than two.

In some embodiments, the material of the storage device is quartz or graphite.

In another aspect of the present invention, the present invention discloses a solution removing method using any one of the solution removing apparatuses for a crystal growth furnace described above, characterized by comprising:

s101: immersing the adsorption device into a certain height of the solution in the crucible;

s102: and after a certain period of adsorption, removing the adsorption device out of the crucible.

In some specific embodiments, in step S101, the adsorption device is immersed at a height from the bottom end of the adsorption device to 3/8-7/8 of the solution.

In some specific embodiments, in step S102, the suction time of the suction device is 1-7 min.

In some specific embodiments, the method further includes step S103: and (4) replacing the adsorption material with a new adsorption material, and repeating the steps of S101 and S102.

In some specific embodiments, the number of repetitions of S103 is 2-4.

In still another aspect of the present invention, a crystal growth furnace is disclosed, the crystal growth furnace comprising a main chamber, a sub-chamber and a pulling device, the main chamber containing a crucible for carrying a solution, the sub-chamber being disposed above the main chamber, a communication port being disposed below the sub-chamber, a communication port being disposed above the main chamber, the pulling device being disposed above the sub-chamber, the pulling device being accessible into the main chamber through the communication port below the sub-chamber and the communication port of the main chamber, wherein the solution removing device is adapted to be connected to the pulling device such that the solution removing device can be raised or lowered relative to the crucible by the pulling device.

In some specific embodiments, a throat is arranged on the auxiliary chamber, the throat is arranged at the joint of the main chamber and the auxiliary chamber, a limiting device matched with the throat is arranged on the storage device, a lifting wire matched with the lifting device is arranged above the adsorption device, a connecting wire matched with the lifting wire is arranged above the storage device, a clamping point is arranged on the lifting wire, and the connecting wire on the storage device can be limited on the lifting wire through the clamping point.

The solution removing device does not need to lift or transform the auxiliary chamber in the solution removing process, so that the temperature field in the crystal growing furnace is not damaged, crystal growing can be performed again quickly after the solution is absorbed, the time is saved, and the cost is reduced; the lifting device is used as the existing device of the crystal growth furnace, and the solution removing device is directly used for entering or removing from the auxiliary chamber by the lifting device, so that the operation is simple and convenient, and the practicability is high.

In another aspect of the present invention, the present invention discloses a solution removing method for a crystal growth furnace, comprising the steps of:

s1: the storage device is arranged on the adsorption device through a connecting wire on the storage device, and the solution removing device is arranged on the lifting device through a lifting wire;

s2: the lifting device is descended until the limiting device on the storage device is suitable for being fixed on the laryngeal opening;

s3: further lowering the pulling device to enable the adsorption device to be immersed into the crucible solution for a certain height;

s4: after a certain period of adsorption, lifting the adsorption device, and lifting the adsorption device into a storage device;

s5: and further lifting the adsorption device until the clamping point drives the connecting line to lift the storage device, and simultaneously removing the storage device and the adsorption device from the auxiliary chamber.

In some specific embodiments, in step S3, the adsorption device is immersed at a height from the bottom end of the adsorption device to 3/8-7/8 of the solution.

In some specific embodiments, in step S4, the suction time of the suction device is 1-7 min.

In some specific embodiments, the method further includes step S6: and (4) replacing the adsorption material with a new adsorption material, and repeating the steps of S101 and S102.

In some specific embodiments, the number of repetitions of S6 is 2-4.

Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.

Drawings

Fig. 1 is a schematic view of one embodiment of the solution removing apparatus for a crystal growth furnace (crystal growth furnace) of the present invention.

Fig. 2 is a schematic view showing an example in which the adsorbing material is provided in the shape of a spiral cylinder in the adsorbing device of the present invention.

FIG. 3 is a schematic view of an embodiment of the present invention in which the adsorbent material is arranged in the shape of a spiral quadrilateral.

FIG. 4 is a diagram of a porous quartz plate used in the adsorption apparatus of the present invention.

FIG. 5 is a schematic view of an embodiment of the adsorption apparatus of the present invention.

Figure 6 is a top view of one embodiment of the support device of the present invention.

Fig. 7 is a front view of one embodiment of the support device of the present invention.

FIG. 8 is a schematic flow chart of an embodiment of a removing method of the solution removing apparatus for a crystal growth furnace according to the present invention.

FIG. 9 is a schematic flow chart illustrating a solution removing method of a crystal growth furnace according to an embodiment of the present invention.

Reference numerals:

solution removing apparatus 1, adsorbing apparatus 11, adsorbing material 111,

Supporting device 112, first fixed end 112a, supporting end 112b

A porous quartz plate 113, a hole 113 a;

pulling wire 114, clip 114a

A storage device 12, a spacer member 121, a one-way hinge 121a, a spacer 121b,

A connecting wire 122, a limiting device 123,

Main chamber 2, crucible 3, pulling device 4, auxiliary chamber 5, throat 51.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.

The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize the applicability of other processes and/or the use of other materials.

Next, a solution removing apparatus for a crystal growth furnace according to a first aspect of the present invention will be described with reference to the accompanying drawings, as shown in fig. 1,

the crystal growth furnace is provided with a main chamber 2, a crucible 3 for bearing solution is accommodated in the main chamber 2, the solution removing device 1 of the crystal growth furnace comprises an adsorption device 11, the adsorption device 11 is arranged above the crucible 3 and can be lifted relative to the crucible 3, the adsorption device 11 comprises a high-temperature-resistant pollution-free adsorption material 111 with adsorption capacity, and the adsorption material 111 can adsorb the solution in the crucible 3 so that the solution is attached to the adsorption material 111 as attachment.

From this, through direct adsorbed method, adsorb solution on adsorbing material to effectual solution that will be rich in a large amount of impurities removes, promotes the quality of follow-up crystal bar, and the device easy operation is convenient, can effectively raise the efficiency, uses manpower sparingly and time cost.

The adsorbing material 111 may be a quartz fiber cloth, the quartz fiber cloth is a glass fiber made of silicon dioxide and natural quartz crystal, has high heat resistance, and is not melted by a high-temperature solution in the contact process with the solution, and the purity of the silicon dioxide in the quartz fiber cloth is 99.95%, so that the furnace is not polluted.

Further, the pore diameter of the silica fiber cloth is 2 to 10 μm, and may be, for example, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm or 10 μm, and if the pore diameter of the silica fiber cloth is too small, the adsorption force is too weak to adsorb too much solution, and if the pore diameter is too large, the solution cannot be adsorbed. By selecting a proper pore diameter and immersing the quartz fiber cloth into the solution, silicon can be sucked into pores by utilizing the capillary force generated by the pores on the quartz fiber cloth, so that the silicon can be adhered to the quartz fiber cloth as an attachment, and the solution can be effectively removed. In addition, the quartz fiber cloth is low in price, and the quartz fiber cloth is used as an adsorption material, so that the cost can be effectively saved.

In some specific embodiments, the adsorbing material 111 may be provided in various shapes, and optionally, the adsorbing material 111 may be provided in a sheet shape, a cylindrical shape, a spiral cylindrical shape, a polygonal shape, a spiral polygonal shape, etc., thereby increasing the adsorbing surface area of the adsorbing material 111 and more effectively adsorbing the solution.

In some embodiments, as shown in fig. 2, the adsorbing material 111 may be arranged in a spiral cylinder shape with a certain distance, and there may be corners between the sides of the spiral polygon shape, such as the spiral polygon shape shown in fig. 3, and the sides of the spiral polygon shape, and these corners may enrich the solution, thereby affecting the absorption of the solution. The spiral cylinder shape can more smoothly enable the solution to be absorbed.

Further, the pitch of the spiral shape in which the adsorbent 111 is disposed may be set according to the diameter of the quartz crucible or the number of turns of the adsorbent 111. For example: as shown in fig. 1, since the bottom of the quartz crucible is gradually raised in an arc shape from the center to the edge in the radial direction, so that the solution at the center is deepest and the solution depth at the edge is shallow, the larger the diameter of the quartz crucible is, the shallower the depth of the solution is, and the shallower the depth toward the edge is, for the solution of the same volume, in order to adsorb the solution under the crucible with a large diameter, if the adsorbing material 111 is provided in a spiral cylinder shape, the pitch of the spiral cylinder shape can be set to be a mode in which the pitch from the center to the edge is gradually increased, that is, the intermediate pitch is small and the edge pitch is large, the center pitch of the adsorbing material 111 is small, the adsorbing area is large, the solution at the center of the solution can be effectively adsorbed, the edge pitch is large, and the solution is shallow, and the solution can be effectively adsorbed. If the diameter of the quartz crucible is small, the adsorbing material 111 may be provided at a uniform pitch.

In some specific embodiments, as shown in fig. 1 and 4, a porous quartz plate 113 is disposed below the adsorption device 11. Since the adsorbing material 111 is light in weight, the immersion depth may be insufficient, and the quartz plate 113 is installed under the adsorbing device 11, so that the quartz plate can ensure that the adsorbing material 111 is immersed to a required depth, and the solution adsorption is effectively performed. In addition, the quartz plate 113 is placed under the adsorbing material 111, so that the risk that the adsorbing material may be melted at high temperature or the adsorbing material falls off to contaminate the solution due to other reasons can be eliminated, or the solidified or small amount of the uncured solution attached to the adsorbing material is prevented from falling into the crucible again during the lifting of the adsorbing material.

The quartz plate 113 is provided with a plurality of through holes 113a, and the adsorbing material is wound in the through holes, so that the quartz plate and the adsorbing material can be fixed.

In some specific embodiments, as shown in fig. 1, the solution removing apparatus 1 further includes: and the storage device 12 is arranged above the adsorption device 11, and a storage space is defined in the storage device 12 and used for storing the adsorption device 11 after the solution is adsorbed. Through putting into storage device with adsorption equipment, can effectively avoid adsorption equipment to lead to the fact the risk of pollution in the long brilliant stove or avoid directly carrying and draw adsorption equipment at the in-process of removing, can have the solution of solidification on the adsorption equipment to lead to the fact the hidden danger such as friction damage to the interior wall of stove.

In order to allow the adsorption device to enter the storage device, the maximum profile dimension of the adsorption material is smaller than the maximum diameter of the storage device, it should be noted that the maximum profile dimension in the present application refers to the maximum dimension in the radial direction of the adsorption device, so that the adsorption material can completely enter the storage device.

Further, as shown in fig. 1, an isolation assembly 121 capable of opening and closing in a single direction is arranged in the storage device 12, and after the adsorption device 11 enters the storage device 12, the isolation assembly 121 prevents the adsorption device 11 from falling into the crucible 3, thereby avoiding a risk that the solidified adsorption device falls into the crucible to damage the crucible or a risk that the solidified silicon material falls into the crucible to damage the crucible if the pulling device is operated by mistake.

Alternatively, as shown in fig. 1, the isolation member 121 may be composed of a one-way hinge 121a and isolation plates 121b, the isolation plates 121b being disposed at the lower end of the storage device 12 and connected by the one-way hinge 121a, and the number of the isolation plates may be two or more, for example, two, three, four, five, six, etc.

Therefore, through the control of the one-way hinge 121a and the partition board 121b, when the adsorption device 11 is lifted, the force for lifting the adsorption device 11 causes the one-way hinge 121a to open the partition board 121b upwards, the adsorption device 11 is continuously lifted, the adsorption device 11 enters the storage device 12 and is gradually separated from the contact with the partition board 121b, once the adsorption device 11 is separated from the contact with the partition board 121b, the downward gravity of the partition board 121b drives the one-way hinge 121a and closes the partition board 121b, the storage device 12 is sealed, the adsorption device 11 is prevented from falling into the crucible, and therefore the risk that the solidified silicon material or the adsorption device falls into the crucible to cause damage in the crucible is effectively avoided.

Wherein, the material of the storage device 12 is quartz or graphite. Quartz and graphite are common thermal field components in single crystal furnaces, are suitable for high-temperature environments of single crystal furnaces, and cannot cause pollution in the furnaces.

Next, a solution removing method according to a second aspect of the present invention using any one of the above-described solution removing apparatuses for a growth furnace is described with reference to the drawings.

As shown in fig. 8, the solution removing method includes the steps of:

s101: immersing the adsorption device 11 at a certain height of the solution in the crucible 3;

in this step, the solution is adsorbed by the adsorbent by immersing the adsorbing device in the solution in the crucible, and the solution is attached to the adsorbent as an attached matter.

Wherein, in some specific embodiments, the suction device 11 is immersed at 3/8-7/8 of solution. For example, 3/8, 4/8, 5/8, 6/8 or 7/8 may be in solution, and too shallow a depth of immersion may result in too much adsorbed solution solidifying on the adsorbent material and falling onto the crucible, causing damage to the crucible.

S102: after a certain period of adsorption, the adsorption apparatus 11 is removed from the crucible.

In this step, effective solution adsorption can be achieved by immersing the adsorbent material in the crucible for a period of time.

In some specific embodiments, the adsorption time is 1-7min, for example, 1min, 2min, 3min, 4min, 5min, 6min or 7min, so that the silicon solution can be sufficiently immersed in the adsorption material to achieve effective solution adsorption. After the adsorption is completed, the adsorption material can be moved out of the crucible.

In some embodiments, to more fully remove the solution, the solution removal method further comprises:

s103: the adsorbent 11 is replaced with a new one, and the steps of S101 and S102 are repeated.

In this step, the adsorbed adsorbing material is extracted, and the steps of steps S101 and S102 are repeated after replacing the new adsorbing material, as described above, the adsorbing material in the present invention can be made of quartz fiber cloth, which is low in cost, and can effectively remove the solution without increasing much cost even if the adsorbing material is sucked for many times.

Wherein the repetition frequency of S103 is 2-4 times. For example 2, 3 or 4 times. After repeating for 2 times, the solution in the silicon liquid becomes very little, and because a new material needs to be added subsequently, in the process of adding the new material, the crucible can be more effectively protected from being damaged by the newly added silicon material by a certain amount of solution, and therefore the solution does not need to be sucked up.

Next, a crystal growth furnace according to a third aspect of the present invention will be described with reference to the accompanying drawings.

As shown in fig. 1, the crystal growth furnace includes a main chamber 2 in which a crucible 3 carrying a solution is accommodated, a sub-chamber 5 disposed above the main chamber 2, a communication port disposed below the sub-chamber 5, a communication port disposed above the main chamber 2, and a pulling device 4 disposed above the sub-chamber 5, the pulling device being accessible into the main chamber through the communication port below the sub-chamber 5 and the communication port of the main chamber 3, and the crystal growth furnace further includes a solution removing device 1 as described above, the solution removing device 1 being adapted to be connected to the pulling device 4, whereby the solution removing device 1 is raised or lowered with respect to the crucible 3 by the pulling device 4. The solution removing device does not need to lift or transform the auxiliary chamber in the solution removing process, so that the temperature field in the crystal growing furnace is not damaged, crystal growing can be performed again quickly after the solution is absorbed, the time is saved, and the cost is reduced; the lifting device is used as the existing device of the crystal growth furnace, and the solution removing device is directly used for entering or removing from the auxiliary chamber by the lifting device, so that the operation is simple and convenient, and the practicability is high.

In some specific embodiments, the auxiliary chamber 5 is provided with a throat 51, the throat 51 is arranged at the connection position of the main chamber 2 and the auxiliary chamber 5, the storage device 12 is provided with a limiting device 123 adapted to the throat 51, the adsorption device 11 is provided with a pulling wire 114 adapted to the pulling device, the pulling wire 114 may be an alloy wire, such as a tungsten wire, a molybdenum wire, etc., the storage device 12 is provided with a connection wire 122 adapted to the pulling wire 114, the pulling wire 114 is provided with a clamping point 114a, and the connection wire 112 on the storage device 12 may be fixed on the connection wire 114 through the clamping point 114a, thereby realizing the simultaneous or separate ascending or descending operation of the adsorption device 11 on the storage device 12 by the same pulling device.

Specifically, in the solution removing process, the storage device is mounted on the adsorption device 11 through the connection line 122 on the storage device 12, the solution removing device 1 is mounted on the pulling device 4 through the pulling wire 114, the pulling wire 114 is controlled to ascend and descend through the pulling device 4, and further the storage device 12 and the adsorption device 11 ascend and descend. Further, the limiting descending of the storage device is realized through the clamping point 114a on the lifting and pulling line 114, further, after the storage device 12 descends to the throat, the limiting device 123 on the storage device 12 is suitable for being fixed at the throat 51, and when the lifting and pulling line 114 descends, the storage device 12 does not descend any more, so that the ascending and descending of the adsorption device 11 can be realized independently, and the solution adsorption is carried out.

Further, after the solution is removed, when the pulling device 4 pulls the pulling wire 114 upward, the pulling wire 114 drives the adsorption device 11 to lift up and enter the storage device 12, in the further pulling of the pulling wire 114, the fastening point 114a on the pulling wire 114 contacts the connection line 122 on the storage device, when the fastening point 114a pulls the connection line 122 upward, the tension formed by the connection line 122 is increased, until the connection line 122 drives the storage device 12 to separate from the throat 51, at this time, the pulling wire 114 pulls the storage device 12 and the adsorption device 11 at the same time, and finally the solution removal device 1 is removed from the auxiliary chamber 5.

From this, through effectively utilizing the device of current long brilliant stove, do not change the temperature field in the stove, need not carry out extra institutional transformation to long brilliant stove, and utilize same draw gear to realize storage device and adsorption equipment's lift, easy operation is convenient, and the suitability is strong.

Further, as shown in fig. 5-7, in order to further realize the support of the adsorption device, a support device 112 may be disposed at the lower end of the pulling line 114 or below the pulling line 114, and the support device 112 may support the adsorption material 111, and realize the arrangement of various shapes of the adsorption material 111, and may also avoid that the adsorption device is deformed too much after the solution is adsorbed, thereby influencing the adsorption device to be pulled into the storage device. Specifically, as shown in fig. 5 to 7, for example, in order to arrange the adsorbing material in a spiral cylindrical shape, the upper end 112a of the supporting device may be configured to be matched with the pulling wire 114 or the pulling device 4, for example, as shown in fig. 7, the upper end 112a of the supporting device may be configured to be ring-shaped, matched with the weight on the pulling device 4, and the supporting device 112 may be fixed to the pulling device by using the pin of the weight to fix the supporting device 112 to the pulling device, and it is understood that, at this time, the supporting device 112 may be identical to the pulling wire 114, and after the fastening point is arranged on the supporting device 112, the adsorbing device and the storing device may be lifted or lowered simultaneously or separately. Further, since the absorbent material 111 has a certain flexibility and a certain hardness, the lower end 112b of the support device can be configured in various shapes, such as a polygon, a cylinder, a spiral polygon or a spiral cylinder, as shown in fig. 6, the lower end 112b of the support device can be configured in a planar spiral cylinder, and the support device 112 can effectively support the absorbent material 111 by penetrating the absorbent material 111 through the support device 112b, wrapping the support device 112b2 below the upper end surface of the absorbent material, thereby achieving the maximum utilization of the solution.

Next, a solution removing method of a crystal growth furnace according to a fourth aspect of the present invention will be described with reference to the drawings.

As shown in fig. 9, the solution removing method includes the steps of:

s1: installing a storage device on an adsorption device through a connecting line on the storage device, and installing a solution removal device on a lifting device through a lifting line;

in this step, during the solution removal process, the storage device is mounted on the adsorption device 11 through the connection line 122 on the storage device 12, and after the solution removal device 1 is mounted on the pulling device 4 through the pulling wire 114, the pulling wire 114 is controlled to ascend and descend by controlling the pulling device 4, and further the solution removal device 1, that is, the storage device 12 and the adsorption device 11, ascends and descends.

S2: the lifting device is descended until the limiting device on the storage device is suitable for being fixed on the laryngeal opening;

in this step, the lifting device 4 is lowered, and at this time, the storage device 12 and the suction device 11 are lowered at the same time, and after the storage device 12 is lowered to the throat, the limiting device 123 on the storage device 12 is adapted to be fixed at the throat 51.

S3: further lowering the pulling device so that the adsorption device is immersed to a certain height in the crucible solution;

when the limiting device 123 on the storage device 12 is fixed at the throat 51 and the pulling wire 114 descends at the moment, the storage device 12 does not descend any more, so that the adsorption device 11 can ascend and descend independently to adsorb the solution.

Wherein, in some specific embodiments, the suction device 11 is immersed at 3/8-7/8 of solution. For example, 3/8, 4/8, 5/8, 6/8 or 7/8 may be in solution, and too shallow a depth of immersion may result in too much adsorbed solution solidifying on the adsorbent material and falling onto the crucible, causing damage to the crucible.

S4: after a certain period of adsorption, lifting the adsorption device to lift the adsorption device, and lifting the adsorption device into a storage device;

in this step, after the solution is removed, when the pulling device 4 pulls the pulling wire 114 upward, the pulling wire 114 drives the adsorption device 11 to ascend, and enters the storage device 12.

In some specific embodiments, the adsorption time is 1-7min, for example, 1min, 2min, 3min, 4min, 5min, 6min or 7min, so that the silicon solution can be sufficiently immersed in the adsorption material to achieve effective solution adsorption. After the adsorption is completed, the adsorption material can be moved out of the crucible.

S5: and further lifting the adsorption device until the clamping point drives the connecting line to lift the storage device, and simultaneously removing the storage device and the adsorption device from the auxiliary chamber.

In this step, when the pulling wire 114 is further pulled, the fastening point 114a on the pulling wire 114 contacts the connecting wire 122 on the storage device, and when the fastening point 114a pulls the connecting wire 122 upward, the tension formed by the connecting wire 122 becomes larger and larger until the connecting wire 122 drives the storage device 12 to be separated from the throat 51, at this time, the pulling wire 114 pulls the storage device 12 and the adsorption device 11 at the same time, and finally the solution removing device 1 is removed from the sub-chamber 5.

In some embodiments, in order to remove the solution more sufficiently, the solution removing method further includes:

s6: the adsorbing material 11 is replaced with a new one, and the steps S1 to S5 are repeated.

In this step, the adsorbed adsorbent is removed, and the steps from step S1 to step S5 are repeated after the new adsorbent is replaced, as described above, the removing device of the present invention is adapted to the single crystal furnace, the operation of replacing the new adsorbent is simple, the cost of the adsorbent is low, the cost is not increased too much even after the adsorption is performed for many times, and the solution can be removed effectively.

Wherein the repetition frequency of S103 is 2-4 times. For example 2, 3 or 4 times. After repeating for 2 times, the solution in the silicon liquid becomes very little, and the solution does not need to be completely absorbed because new materials need to be added subsequently, and the crucible can be more effectively protected from being damaged by the newly added silicon materials only by a certain amount of solution in the process of adding the new materials.

In one specific embodiment, a solution removal apparatus as shown in FIG. 1 is used, wherein the adsorption material 111 is made of a quartz fiber cloth having a pore size of

Prepared into a spiral cylinder shape as shown in fig. 2, with a uniform interval arrangement, and a porous quartz plate 113 is disposed below the adsorption device. When 2 single crystal rods were pulled by the crystal growth furnace and about 30kg of the solution remained in the crucible, the solution in the crucible was adsorbed, and about 15kg of the solution remained in the crucible after 1 adsorption, and the 3 rd crystal rod was pulled by feeding and pulling. The body minority carrier lifetime tester with the model number of Sinton BCT400 of the Sinton instruments company in the United states is adopted to compare the body minority carrier lifetime of the drawn 2 nd crystal bar with that of the 3 rd crystal bar, and the result shows that the body minority carrier lifetime of the 3 rd crystal bar is improved by about 50 percent compared with that of the 2 nd crystal bar.

In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.

Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.