阅读说明：本技术 沉积掩模、使用沉积掩模制造显示装置的方法和显示装置 (Deposition mask, method of manufacturing display device using the same, and display device ) 是由 金桢国 文英慜 于 2020-10-15 设计创作，主要内容包括：提供了一种沉积掩模、一种使用该沉积掩模制造显示装置的方法和一种显示装置。沉积掩模包括：主框架,限定第一开口；肋,远离主框架的一侧延伸,肋彼此分开并限定第二开口；以及桥接件,横跨第二开口使肋彼此连接,其中,桥接件和肋形成同一顶表面,并且桥接件中的每个的厚度比肋中的每个肋的厚度小。(A deposition mask, a method of manufacturing a display device using the deposition mask, and a display device are provided. The deposition mask includes: a main frame defining a first opening; ribs extending away from a side of the main frame, the ribs being spaced apart from each other and defining second openings; and a bridge connecting the ribs to each other across the second opening, wherein the bridge and the ribs form a same top surface, and a thickness of each of the bridges is smaller than a thickness of each of the ribs.)

1. A deposition mask, comprising:

a main frame defining a first opening;

ribs extending away from a side of the main frame, the ribs being spaced apart from each other and defining a second opening; and

a bridge connecting the ribs to each other across the second opening, wherein,

the bridge and the ribs form the same top surface, an

A thickness of each of the bridges is smaller than a thickness of each of the ribs.

2. The deposition mask according to claim 1, wherein a cross section of each bridge has an inverted triangular shape, the cross section being perpendicular to a longitudinal direction of each bridge.

3. The deposition mask of claim 1,

a width of each bridge in a direction perpendicular to a longitudinal direction of each bridge is smaller than the thickness of each bridge, and

the difference between the thickness of each rib and the thickness of each bridge is at least 0.5 times the width of each bridge.

4. The deposition mask of claim 1, wherein a region of the mainframe adjacent to the second opening has the same shape as the bridge.

5. A display device, the display device comprising:

a substrate;

a first display region including first pixels disposed over the substrate; and

a second display area including second pixels disposed over the substrate and having a resolution different from a resolution of the first display area, wherein,

the first pixel and the second pixel include a common electrode,

the common electrode includes: a main common electrode corresponding to the first display region; and extension portions extending from the main common electrode to the second display region and separated from each other, and

each of the extension portions includes a first region located between the second pixels, the first region being thinner than the main common electrode.

6. The display device according to claim 5, wherein the common electrode further comprises a second region thinner than the main common electrode in a connection part of the main common electrode and the extension part.

7. The display device according to claim 5, wherein the first region intersects with a corresponding extension portion among the extension portions.

8. The display device according to claim 5,

a transmissive region is defined between the extension portions in the second display region, and

the common electrode is not disposed in the transmissive region.

9. The display device according to claim 8, wherein a resolution of the second display region is smaller than a resolution of the first display region.

10. The display device according to claim 8, further comprising a component for detecting an external signal, the component being disposed at a position overlapping the second display region.

11. The display device according to claim 10,

each of the first pixel and the second pixel includes:

a thin film transistor; and

an organic light emitting diode electrically connected to the thin film transistor and

a blocking layer is further disposed between the thin film transistor and the substrate in the second display region.

12. The display device according to claim 11, further comprising a first buffer layer and a second buffer layer disposed on the substrate,

wherein the barrier layer is disposed between the first buffer layer and the second buffer layer.

13. The display device according to claim 12,

the active layer of the thin film transistor includes a silicon material,

the first buffer layer comprises silicon nitride, and

the second buffer layer includes silicon oxide.

14. The display device according to claim 11, further comprising:

a planarization layer between the thin film transistor and the organic light emitting diode; and

a pixel defining layer disposed on the planarization layer and covering an edge portion of a pixel electrode of the organic light emitting diode to define an emission area,

wherein a portion of the planarization layer corresponding to a position overlapping the transmissive region and a portion of the pixel defining layer corresponding to a position overlapping the transmissive region are removed.

15. The display device according to claim 5, wherein the number of the second pixels provided in the second display region per unit area is smaller than the number of the first pixels provided in the first display region per unit area.

16. A method of manufacturing a display device, the method of manufacturing a display device comprising:

attaching a substrate to a deposition mask; and

forming a common electrode over the substrate through the deposition mask,

wherein the deposition mask comprises: a main frame defining a first opening; ribs projecting away from a side of the main frame, the ribs being spaced apart from each other and defining a second opening; and bridges fixing the ribs to each other by connecting the ribs across the second openings, each of the bridges having a thickness smaller than a thickness of each of the ribs;

the common electrode includes: a main common electrode deposited through the first opening; and an extension portion deposited through the second opening between the ribs, and

the extension portion includes a first region thinner than a thickness of the main common electrode at a position where the bridge is disposed.

17. The method of claim 16, wherein,

a region of the main frame adjacent to the second opening has the same shape as that of the bridge,

a second region is formed in a connection portion of the main common electrode and the extension portion, and

the second region and the first region have the same shape.

18. The method of claim 16, wherein the rib and the bridge form the same top surface.

19. The method according to claim 16, wherein the common electrode is not formed in a transmissive region between the extension portions.

20. The method of claim 19, wherein a component for sensing an external signal is further provided at a position overlapping at least the transmissive region.

Technical Field

One or more embodiments relate to a deposition mask, a method of manufacturing a display device using the same, and a display device.

Background

Recently, the use of display devices has become diversified. As display devices have become thinner and lighter, their range of use has gradually expanded.

Since the display apparatus can be used in various ways, the display device has been designed to have various shapes. In addition, functionality that may be combined with or associated with the display devices continues to increase.

It will be appreciated that this background section is intended in part to provide a useful background for understanding the technology. This background section, however, may also include ideas, concepts or insights not already known or appreciated by those of ordinary skill in the relevant art prior to the corresponding effective filing date of the subject matter disclosed herein.

Disclosure of Invention

One or more embodiments may include a deposition mask, a method of manufacturing a display device using the deposition mask, and a display device.

Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the disclosed embodiments.

According to one or more implementations, a deposition mask may include: a main frame defining a first opening; ribs extending away from a side of the main frame, the ribs being spaced apart from each other and defining second openings; and a bridge connecting the ribs to each other across the second opening, wherein the bridge and the ribs may form the same top surface, and a thickness of each of the bridges may be smaller than a thickness of each of the ribs.

A cross section of each bridge may have an inverted triangular shape, the cross section being perpendicular to a longitudinal direction of each bridge.

A width of each bridge in a direction perpendicular to a longitudinal direction of each bridge may be smaller than a thickness of each bridge, and a difference between the thickness of each rib and the thickness of each bridge may be at least about 0.5 times the width of each bridge.

A region of the main frame adjacent to the second opening may have the same shape as that of the bridge.

According to one or more embodiments, a display device may include: a substrate; a first display region including first pixels disposed over a substrate; and a second display region including second pixels disposed over the substrate and having a resolution different from that of the first display region, wherein the first and second pixels may include a common electrode, and the common electrode may include: a main common electrode corresponding to the first display region; and extension portions extending from the main common electrode to the second display region and separated from each other, and each of the extension portions includes a first region located between the second pixels, the first region being thinner than the main common electrode.

The common electrode may further include a second region thinner than the main common electrode in a connection part of the main common electrode and the extension part.

The first region may intersect with a corresponding extension portion among the extension portions.

The transmissive region may be defined between the extension portions in the second display region, and the common electrode may not be disposed in the transmissive region.

The resolution of the second display region may be smaller than the resolution of the first display region.

The display device may further include a component for detecting an external signal, the component being disposed at a position overlapping the second display region.

Each of the first and second pixels may include: a thin film transistor; and an organic light emitting diode electrically connected to the thin film transistor, and the blocking layer may be further disposed between the thin film transistor and the substrate in the second display region.

The first and second buffer layers may be further disposed on the substrate, and the barrier layer may be disposed between the first and second buffer layers.

The active layer of the thin film transistor may include a silicon material, the first buffer layer may include silicon nitride, and the second buffer layer may include silicon oxide.

The display device may further include: a planarization layer between the thin film transistor and the organic light emitting diode; and a pixel defining layer disposed on the planarization layer and covering an edge portion of the pixel electrode of the organic light emitting diode to define an emission region, wherein a portion of the planarization layer corresponding to a position overlapping the transmissive region and a portion of the pixel defining layer corresponding to a position overlapping the transmissive region may be removed.

The number of the second pixels disposed in the second display region per unit area may be less than the number of the first pixels disposed in the first display region per unit area.

According to one or more embodiments, a method of manufacturing a display device may include: attaching a substrate to a deposition mask; and forming a common electrode over the substrate through a deposition mask, wherein the deposition mask may include: a main frame defining a first opening; ribs projecting away from a side of the main frame, the ribs being spaced apart from each other and defining second openings; and bridges fixing the ribs to each other by connecting the ribs across the second opening, each of the bridges having a thickness smaller than a thickness of each of the ribs, and the common electrode may include: a main common electrode deposited through the first opening; and an extension portion deposited through the second opening between the ribs, and the extension portion may include a first region thinner than a thickness of the main common electrode in a position in which the bridge may be disposed.

A region of the main frame adjacent to the second opening may have the same shape as that of the bridge, a second region may be formed in a connection portion of the main common electrode and the extension portion, and the second region and the first region may have the same shape.

The rib and the bridge may form the same top surface.

The common electrode may not be formed in the transmissive region between the extension portions.

A component for sensing an external signal may be further provided at a position overlapping at least the transmissive area.

Drawings

The above and other aspects, features and advantages of the particular embodiments disclosed will become more apparent from the following description when taken in conjunction with the accompanying drawings in which:

fig. 1 is a schematic perspective view of an example of a display device according to an embodiment;

fig. 2 is a schematic cross-sectional view of an example of a cross section of the display device taken along lines a-a 'and B-B' of fig. 1;

FIG. 3 is a schematic perspective view for illustrating some processes for manufacturing the display device of FIG. 1;

FIG. 4 is a schematic plan view of a portion of the deposition mask of FIG. 3;

fig. 5 is a schematic cross-sectional view of an example of a manufacturing apparatus used during a process of manufacturing the display device of fig. 2;

FIG. 6 is a schematic cross-sectional view of an example of a deposition mask taken along line II-II' of FIG. 4;

fig. 7 is a schematic plan view of the display device of fig. 1;

fig. 8 is a schematic plan view of a portion of the common electrode of the display device of fig. 7;

fig. 9 is a schematic cross-sectional view of an example of the display device taken along line IV-IV' of fig. 8; and

fig. 10 is a schematic cross-sectional view of an example of a deposition mask taken along line VI-VI' of fig. 4.

Detailed Description

Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout. In this regard, the embodiments may have different forms and should not be construed as limited to the description set forth herein. Accordingly, the embodiments are described below in order to explain aspects of the specification by referring to the figures only. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. The terms "and" or "may be used in a combined or separated sense and may be understood to be equivalent to" and/or ". Throughout the disclosure, the expression "at least one of a, b and c" indicates all or a variation of only a, only b, only c, both a and b, both a and c, both b and c, a, b and c.

It will be understood that, although the terms "first," "second," etc. may be used herein to describe various components, these components should not be limited by these terms. These terms are only used to distinguish one component from another.

As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

It will be further understood that the terms "comprises" and/or "comprising," when used herein, specify the presence of stated features or components, but do not preclude the presence or addition of one or more other features or components.

It will be understood that when a layer, region or component is referred to as being "formed on" another layer, region or component, it can be directly or indirectly formed on the other layer, region or component. For example, intervening layers, regions, or components may be present.

The sizes of the elements in the drawings may be exaggerated or reduced for convenience of explanation. In other words, since the sizes and thicknesses of components in the drawings are arbitrarily illustrated for convenience of explanation, the following embodiments are not limited thereto.

While certain embodiments may be practiced differently, the specific process sequence may be performed in a different order than that described. For example, two processes described consecutively may be performed substantially simultaneously or in reverse order to that described.

The term "stacked" may include stacked, facing or facing, extending over … …, covering or partially covering, or any other suitable term as will be appreciated and understood by those of ordinary skill in the art.

As used herein, "about" or "approximately" includes the stated values and is meant to be within an acceptable deviation of the particular values as determined by one of ordinary skill in the art, taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "about" may mean within one or more standard deviations, or within ± 30%, ± 20%, ± 5% of the stated value.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

Fig. 1 is a schematic perspective view of an example of a display device 1 according to an embodiment.

Referring to fig. 1, the display area DA of the display device 1 may include a first display area DA1 and a second display area DA 2. The first display area DA1 may be a main display area displaying the main image by using light emitted from the first pixels Pm.

The second display area DA2 may be an area in which an input/output component 300 (such as a sensor) that can use an optical signal or a sound signal may be disposed (e.g., arranged) under the substrate 100. The input/output component 300 may transmit, receive, or both transmit and receive, for example, light and/or sound. The transmissive area TA may be disposed in the second display area DA2 so that the input/output assembly 300 may receive an external light signal and/or a sound signal, and such a signal may be output from the input/output assembly 300 to the outside of the display device 1. Since the second pixels Pa may be disposed in the second display area DA2, the second display area DA2 may display an image by using light emitted from the second pixels Pa. However, since the transmissive area TA may be disposed in the second display area DA2, the resolution of the image provided by the second display area DA2 may be smaller than the resolution of the image provided by the first display area DA 1. For example, the number of the second pixels Pa disposed in the second display region DA2 per the same unit area may be smaller than the number of the first pixels Pm disposed in the first display region DA1 per the same unit area.

Hereinafter, although the display device 1 according to the embodiment may be described as an organic light emitting display device as an example, the display device 1 according to the embodiment may be or may be applied in various types of display devices such as an inorganic light emitting display and a quantum dot light emitting display. Similarly, the display device 1, the deposition mask, and the method of manufacturing the display device 1 can be applied to various technologies including being a telephone, a head-up display, a television, an artificial intelligence device, and the like.

Fig. 2 is a schematic cross-sectional view of an example of a cross section of the display device 1 taken along line a-a 'and line B-B' of fig. 1.

As shown in fig. 2, the first pixel Pm and the second pixel Pa may include an organic light emitting diode OLED having a similar structure and a thin film transistor TFT having a similar structure. The difference between the first pixel Pm and the second pixel Pa may be the number of pixels per unit area in the first display area DA1 and the second display area DA 2.

The display device 1 may include a substrate 100 and an input/output assembly 300. The substrate 100 may include a first display area DA1 and a second display area DA2, and the input/output assembly 300 may be disposed at a position overlapping the second display area DA 2.

The input/output assembly 300 may include electronic components that may use light or sound. For example, the input/output assembly 300 may be a sensor such as an infrared sensor that emits and/or receives light, a sensor that outputs and senses light or sound to measure a distance or recognize a fingerprint, a small lamp that outputs light, a speaker that outputs sound, and/or an image collecting device. Electronic components using light may use light of various wavelength bands such as visible light, infrared light, ultraviolet light. The number of the input/output components 300 provided in the second display area DA2 may be provided in plurality. For example, a light emitting element and a light receiving element as the input/output assembly 300 may be disposed together in the second display area DA 2. As another example, the light emitting element and the light receiving element may be simultaneously provided in a single input/output assembly 300.

The substrate 100 may include glass, polymer resin, or a combination thereof. The polymer resin may include polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose acetate propionate, or a combination thereof. The substrate 100 comprising the polymer resin may be flexible, crimpable, or bendable. The substrate 100 may have a multi-layer structure including a layer including a polymer resin and an inorganic layer (not shown).

The buffer layer 111 may be disposed on the substrate 100. The buffer layer 111 may reduce or block permeation of foreign substances, moisture, or external air from below the substrate 100 and provide a flat surface on the substrate 100.

The buffer layer 111 may include an inorganic material such as an oxide or a nitride, an organic material, or an organic/inorganic composite material, and may include a single layer or a plurality of layers including an inorganic material and an organic material. For example, the buffer layer 111 may have a structure in which a first buffer layer 111a and a second buffer layer 111b may be stacked. The first buffer layer 111a and the second buffer layer 111b may include different materials. For example, the first buffer layer 111a may include silicon nitride, e.g., SiN_x. The second buffer layer 111b may include silicon oxide, e.g., SiO_x。

In the case where the first buffer layer 111a includes silicon nitride, hydrogen may be included in forming the silicon nitride. By this technique, the carrier mobility of the active layer 1130 formed on the buffer layer 111 can be improved, and the electrical characteristics of the thin film transistor TFT can be improved. The active layer 1130 may include a silicon material. The interface bonding property between the active layer 1130 including silicon and the second buffer layer 111b including silicon oxide may be improved, and thus, the electrical characteristics of the thin film transistor TFT may be improved.

A thin film transistor TFT may be disposed on the buffer layer 111, the thin film transistor TFT including an active layer 1130, a gate electrode G, a source electrode S, and a drain electrode D. Hereinafter, although a top gate type thin film transistor TFT in which the gate electrode G is disposed above the active layer 1130 may be described, the thin film transistor TFT may be a bottom gate type thin film transistor TFT in which the gate electrode G may be disposed below the active layer 1130.

The active layer 1130 on the buffer layer 111 may include, for example, polysilicon. The active layer 1130 may include a channel region overlapping the gate electrode G, source and drain regions. The source and drain regions may be disposed on two opposite sides of the channel region and doped with impurities having a higher concentration than that of the channel region. Here, the impurity may include an N-type impurity or a P-type impurity. In another embodiment, the active layer 1130 may include amorphous silicon or an organic semiconductor material. In another embodiment, the active layer 1130 may include an oxide semiconductor.

The gate electrode G may be disposed over the active layer 1130 with the first gate insulating layer 112 between the gate electrode G and the active layer 1130. The gate electrode G may include at least one of molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti), and may include a single layer or a multilayer.

The first gate insulating layer 112 may include silicon oxide (SiO)₂) Silicon nitride (SiN)_x) Silicon oxynitride (SiON), aluminum oxide (Al)₂O₃) Titanium oxide (TiO)₂) Tantalum oxide (Ta)₂O₅) Hafnium oxide (HfO)₂) And zinc peroxide (ZnO)₂) At least one of (1).

The second gate insulating layer 113 may cover the gate electrode G. The second gate insulating layer 113 may include silicon oxide (SiO)₂) Silicon nitride (SiN)_x) Silicon oxynitride (SiON), aluminum oxide (Al)₂O₃) Titanium oxide (TiO)₂) Tantalum oxide (Ta)₂O₅) Hafnium oxide (HfO)₂) And zinc peroxide (ZnO)₂) At least one of (1).

The source electrode S and the drain electrode D may be disposed on the interlayer insulating layer 115. The source electrode S and the drain electrode D may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or a combination thereof, and may include a single layer or a plurality of layers including the above materials.

The planarization layer 117 may be disposed on the source electrode S and the drain electrode D. The organic light emitting diode OLED may be disposed on the planarization layer 117. The organic light emitting diode OLED may be electrically connected to the thin film transistor TFT. For example, the organic light emitting diode OLED may be electrically connected to the drain electrode D.

The planarization layer 117 may have a flat top surface so that the pixel electrode 210 may be formed flat. The planarization layer 117 may include a single layer or a plurality of layers including organic materials. The planarization layer 117 may include a general-purpose polymer such as benzocyclobutene (BCB), polyimide, Hexamethyldisiloxane (HMDSO), polymethyl methacrylate (PMMA), or Polystyrene (PS), a polymer derivative having a phenolic group, an acrylic polymer, an imide-based polymer, an aromatic ether-based polymer, an amide-based polymer, a fluorine-based polymer, a p-xylene-based polymer, a vinyl alcohol-based polymer, or a blend thereof. The planarization layer 117 may include an inorganic material. The planarization layer 117 may include silicon oxide (SiO)₂) Silicon nitride (SiN)_x) Silicon oxynitride (SiON), aluminum oxide (Al)₂O₃) Titanium oxide (TiO)₂) Tantalum oxide (Ta)₂O₅) Hafnium oxide (HfO)₂) And zinc peroxide (ZnO)₂) At least one of (1). In the case where the planarization layer 117 includes an inorganic material, chemical mechanical polishing may be performed as appropriate. The planarization layer 117 may include both organic and inorganic materials.

The pixel electrode 210 may include a (semi) transparent electrode or a reflective electrode. In an embodiment, the pixel electrode 210 may include a reflective layer including silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a mixture thereof, and a transparent electrode layer or a semi-transparent electrode layer on the reflective layer. The transparent electrode layer or the semi-transparent electrode layer may include Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), zinc oxide (ZnO), indium oxide (In)₂O₃) At least one of Indium Gallium Oxide (IGO) and Aluminum Zinc Oxide (AZO). In an embodiment, the pixel electrode 210 may have a stacked structure of ITO/Ag/ITO.

The pixel defining layer 119 may be disposed on the planarization layer 117. The pixel defining layer 119 may define an emission region by including an opening corresponding to a pixel (i.e., an opening exposing at least a central portion of the pixel electrode 210). The pixel defining layer 119 may prevent an arc or the like from occurring between the edge of the pixel electrode 210 and the edge of the common electrode 230 by increasing a distance between the edge of the pixel electrode 210 and the edge of the common electrode 230. The pixel defining layer 119 may include, for example, an organic material such as polyimide or HMDSO.

The intermediate layer 220 may comprise a low molecular weight material or a polymeric material. In the case where the intermediate layer 220 includes a low molecular weight material, the intermediate layer 220 may have a structure in which an HIL, an HTL, an emission layer (EML), an ETL, an EIL, etc. may be stacked in a single or composite configuration. The intermediate layer 220 may include various organic materials such as copper phthalocyanine (CuPc), N '-di (naphthalene-1-yl) -N, N' -diphenyl-benzidine (NPB), tris-8-hydroxyquinoline aluminum (Alq)₃) Or mixtures thereof. These layers may be formed by vacuum deposition.

In the case where the intermediate layer 220 includes a polymer material, the intermediate layer 220 may have a structure including an HTL and an EML. The HTL may include poly-3, 4-ethylenedioxythiophene (PEDOT), and the EML may include a polymer material, such as a polyphenylenevinylene (PPV) -based material or a polyfluorene-based material. The structure of the middle layer 220 is not limited to the above description and may have various structures. For example, at least one of the layers constituting the intermediate layer 220 may be integrally formed over the pixel electrode 210. As another example, the intermediate layer 220 may include a layer patterned to correspond to each of the pixel electrodes 210.

The common electrode 230 may include a transparent electrode or a reflective electrode. In an embodiment, the common electrode 230 may include a transparent electrode or a semi-transparent electrode, and may include a thin metal layer having a low work function and including at least one of lithium (Li), calcium (Ca), lithium fluoride (LiF)/Ca, LiF/aluminum (Al), Al, silver (Ag), magnesium (Mg), and a mixture thereof. The common electrode 230 may be disposed over the first and second display areas DA1 and DA2 and on the intermediate layer 220 and the pixel defining layer 119.

The transmissive area TA of the second display area DA2 may be an area through which light signals and/or sound signals emitted from the input/output assembly 300 pass. The common electrode 230 may not be formed in the transmissive area TA for accurate signal transmission. According to the experiment, the transmittance of the case where the common electrode 230 may not be formed in the transmissive area TA is about 1.5 times the transmittance of the case where the common electrode 230 may be formed in the transmissive area TA. A process of manufacturing the common electrode 230 having this characteristic structure is described below. Further, in order to improve the transmittance of the transmissive area TA, the planarization layer 117 and the pixel defining layer 119 may be removed from the transmissive area TA.

The barrier layer BSM may be disposed between the substrate 100 and the thin film transistor TFT in a position overlapping the second pixel Pa in the second display area DA 2. The blocking layer BSM blocks the thin film transistor TFT so that the thin film transistor TFT may not be affected by an optical signal or an acoustic signal from the input/output device 300 adjacent thereto. For example, the barrier layer BSM may be disposed between the first and second buffer layers 111a and 111 b.

Although not shown, a thin film encapsulation layer including at least one inorganic encapsulation layer and at least one organic encapsulation layer may be stacked may be formed on the common electrode 230. The inorganic encapsulation layer may include at least one inorganic insulating material among aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon nitride, and silicon oxynitride. The organic encapsulation layer may include polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyvinylsulfonate, polyoxymethylene, polyacrylate, HMDSO, acrylic resins (e.g., polymethylmethacrylate, polyacrylic acid, etc.), or combinations thereof.

Fig. 3 is a schematic perspective view of some processes of manufacturing the display device 1 of fig. 1. Fig. 4 is a schematic plan view of a portion of the deposition mask of fig. 3. Fig. 5 is a schematic cross-sectional view of an example of a manufacturing apparatus used during a process of manufacturing the display device 1 of fig. 2. Fig. 6 is a schematic cross-sectional view of an example of a deposition mask taken along line II-II' of fig. 4.

Fig. 3 illustrates a method of forming the common electrode 230 (see fig. 7) over the substrate 100. Specifically, the deposition mask 10 may be closely attached to the substrate 100, and a material forming the common electrode 230 (see fig. 7) may be deposited over the substrate 100 through the deposition mask 10. The common electrode 230 may be formed over the first and second display areas DA1 and DA2 through one deposition process (see fig. 7). For this purpose, the deposition mask 10 may include first openings 12 and ribs 13, the first openings 12 corresponding to the first display areas DA 1.

The first opening 12 may be defined by the main frame 11 of the deposition mask 10. The rib 13 may protrude from one side of the main frame 11 toward the outside in a plan view to correspond to the second display area DA 2. For example, the rib 13 may protrude from one side of the main frame 11 away from the main frame 11.

The ribs 13 may be spaced apart from each other, and as shown in fig. 4, the second openings 15 may be defined between the ribs 13. Since the ribs 13 may be disposed to correspond to the transmissive area TA (see fig. 7), the common electrode 230 (see fig. 7) may not be deposited in the transmissive area TA (see fig. 7).

In contrast, the second opening 15 may be formed in a position overlapping the second pixel Pa. With this configuration, the common electrode 230 may be deposited on a position corresponding to the second pixel Pa (see fig. 7). The width of the second opening 15 may be greater than the width of the second pixel Pa. As a result, the common electrode 230 (see fig. 7) deposited through the second opening 15 may cover the second pixel Pa. Here, the width of the second pixel Pa may represent the width of an opening of the pixel defining layer 119 (see fig. 2) defining the emission area. Therefore, even if a minute alignment error between the deposition mask 10 and the substrate 100 may occur during the process of forming the common electrode 230 (see fig. 7), the occurrence of formation defects of the common electrode 230 (see fig. 7) may be prevented.

The ribs 13 may be connected to each other by bridges 14. For example, the bridge 14 may intersect the second opening 15 and be disposed between formation regions of the second pixels Pa. Here, in the case where the bridge 14 may be referred to as crossing the second opening 15, the bridge 14 may not only cross the second opening 15 with the shortest distance but also obliquely cross the second opening 15 in a linear shape according to the position of the second pixel Pa as shown in fig. 4. The bridge 14 may allow the common electrode 230 (see fig. 7) to be formed at an accurate position in the second display area DA2 by fixing the position of the rib 13 extending from the main frame 11.

The formation of the common electrode 230 (see fig. 7) by using the deposition mask 10 may be performed by using the manufacturing apparatus 400 shown in fig. 5. The fabrication apparatus 400 may include a chamber 410, a mask assembly 420, a first support 430, a second support 440, a deposition source 450, a magnetic force generator 460, a vision member 470, and a pressure regulator 480.

The chamber 410 may include a space therein, and a portion of the chamber 410 may be open. A gate valve 411 may be provided in an opening portion of the chamber 410 such that the gate valve 411 may be opened/closed. A pressure regulator 480 may be connected to the chamber 410 to regulate the pressure inside the chamber 410. The pressure regulator 480 may include a connection tube 481 and a pump 482, the connection tube 481 being connected to the chamber 410, the pump 482 being disposed at the connection tube 481.

The mask assembly 420 may include a mask sheet 422 and a mask frame 421 coupled to the mask sheet 422. The mask sheet 422 may comprise the deposition mask 10 described above. For example, the mask sheet 422 may include a plurality of deposition masks 10. The mask sheet 422 may be fixed to the mask frame 421 using a tensile force applied thereto.

The substrate 100 may be stably seated on the first support 430. The first support 430 may adjust the position of the substrate 100. For example, the first support 430 may include a UVW platform. The mask assembly 420 may be stably seated on the second support 440. Similar to the first support 430, the second support 440 may adjust the position of the mask assembly 420.

The deposition source 450 may receive and evaporate or sublimate a deposition material to supply the deposition material to the chamber 410. The deposition source 450 may include a heater therein, and the deposition material is melted or sublimated by heating the deposition material inside the deposition source 450 through the operation of the heater.

The vision part 470 may be disposed on the chamber 410, and may photograph the positions of the mask assembly 420 and the substrate 100. The vision part 470 may photograph an alignment mark of at least one of the mask assembly 420 and the substrate 100.

The magnetic force generator 460 may be disposed in the chamber 410, and may closely adhere the substrate 100 to the mask assembly 420. The magnetic force generator 460 may include an electromagnet or a permanent magnet that generates a magnetic force. As described above, since the deposition mask 10 may include the bridge 14 that may fix the position of the rib 13 extending from the main frame 11, the deposition mask 10 may prevent the position of the rib 13 from being distorted while the substrate 100 may be closely attached to the mask assembly 420. As a result, the common electrode 230 may be deposited at an accurate position in the second display area DA2 (see fig. 7).

The common electrode 230 in the second display area DA2 may be deposited through the second openings 15 between the ribs 13 (see fig. 7). The bridge 14 may be disposed to intersect the second opening 15. However, it may be required that the common electrode 230 (see fig. 7) deposited through the second opening 15 is not broken by the bridge 14. For this purpose, as shown in fig. 6, the bridge 14 and the rib 13 may form the same top surface, and the thickness of the bridge 14 may be smaller than that of the rib 13. For example, since the bottom surface of the bridge 14 may be separated from the deposition surface on which the common electrode 230 may be deposited, the common electrode 230 may also be deposited under the bridge 14, and the common electrode 230 (see fig. 7) may be continuously formed in the second display area DA2 without being broken by the bridge 14.

Since the ribs 13 have a shape protruding from the main frame 11 of the deposition mask 10, the common electrode 230 (see fig. 7) should be prevented from being disconnected by the main frame 11 in the first and second display areas DA1 and DA 2. For this purpose, a region P of the main frame 11 adjacent to the second opening 15 may have the same shape as that of the bridge 14. For example, a portion of the main frame 11 corresponding to the region P may have a thickness smaller than the surrounding thickness, and a cross-section of the deposition mask 10 taken along line II-II 'of fig. 4 and a cross-section of the deposition mask 10 taken along line III-III' of fig. 4 may have the same shape as that shown in fig. 6. As a result, in the case where the common electrode 230 (see fig. 7) is deposited by using the deposition mask 10, the common electrode 230 (see fig. 7) may be prevented from being separated in the first and second display areas DA1 and DA 2.

Fig. 7 is a schematic plan view of the display device 1 of fig. 1. Fig. 8 is a schematic plan view of a portion of the common electrode 230 of the display device 1 of fig. 7. Fig. 9 is a schematic sectional view of an example of the display device 1 taken along line IV-IV' of fig. 8.

First, as shown in fig. 7, the display area DA may include a first display area DA1 and a second display area DA2 having different resolutions, respectively. The common electrode 230 may include a main common electrode 230a and an extension 230b, the main common electrode 230a being disposed in the first display area DA1, and the extension 230b being disposed in the second display area DA 2.

The common electrode 230 may be formed through a one-time deposition process by using the deposition mask 10 (see fig. 3) described above. Thus, the main common electrode 230a and the extension 230b may be formed as one body. Accordingly, the first pixel Pm and the second pixel Pa may include the common electrode 230 provided as one body.

The first pixels Pm may be densely disposed in the first display area DA1, and the main common electrode 230a may be formed in one body to correspond to the first pixels Pm.

Since the second pixels Pa may be less densely disposed in the second display area DA2 than the first pixels Pm, the resolution of the second display area DA2 may be smaller than the resolution of the first display area DA 1. The extension portions 230b may protrude from the main common electrode 230a and correspond to the second pixels Pa, respectively.

Although it is illustrated in fig. 7 that the extension portion 230b may have a zigzag shape, the shape of the extension portion 230b may be variously changed according to the arrangement of the second pixels Pa. For example, the extension portion 230b may be formed long in a straight line shape or formed obliquely according to the arrangement of the second pixels Pa. The extension portions 230b may be separated from each other in a direction perpendicular to the extension direction to form the transmissive area TA.

The extension portions 230b may cover the second pixels Pa, respectively, and the width of the extension portions 230b may be greater than the width of the second pixels Pa. Here, the width of the second pixel Pa may represent the width of an opening of the pixel defining layer 119 (see fig. 2) defining the emission area. The extension portion 230b may include a first region G between the second pixels Pa, the first region G being thinner than the thickness of the main common electrode 230 a. The first region G may have a concave shape having a top surface that may be lower than a surrounding top surface. The first region G may be formed at a position where the bridge 14 (see fig. 4) described above may be disposed and may have the same pattern as that of the bridge 14 (see fig. 4). For example, the first region G may intersect with the extension portion 230 b.

As described above, since the region P of the main frame 11 adjacent to the second opening 15 (see fig. 4) may have the same shape as the bridge 14 (see fig. 4), the common electrode 230 may further include a second region Q having a height smaller than that of the common electrode 230 adjacent thereto, the second region Q being at a connection portion of the main common electrode 230a and the extension 230 b. For example, a cross section of the display device 1 taken along the line IV-IV 'and the line V-V' of fig. 8 may have the same shape as that shown in fig. 9.

Fig. 10 is a schematic cross-sectional view of an example of the deposition mask 10 taken along line VI-VI' of fig. 4.

Fig. 10 shows a cross-sectional shape perpendicular to the longitudinal direction of the bridge 14. As described above, since the bottom surface of the bridge 14 may be separated from the deposition surface, the common electrode 230 (see fig. 7) may be deposited under the bridge 14. In the case of depositing the common electrode 230 (see fig. 7), the deposition material may be obliquely incident. In order to improve the deposition efficiency of the portion under the bridge 14, the shape of the vertical section of the bridge 14 may be an inverted triangle. However, the disclosure is not limited thereto, and the bridge 14 may have various shapes.

To improve the efficiency of depositing the common electrode 230 (see fig. 2) under the bridge 14, the thickness T of the bridge 14₂May be greater than the width W of the bridge 14 and the thickness T of the ribs 13₁And thickness T of bridge member 14₂The difference therebetween may be at least about 0.5 times the width W of bridge 14.

According to the embodiment, since an image can be displayed even in a region in which an input/output component can be provided, a display device in which a display region can be expanded can be realized. The common electrode may be formed in an entire region including the main display region and a region in which input/output components may be disposed through a single deposition process.

It is to be understood that the embodiments described herein are to be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should generally be considered as available for other similar features or aspects in other embodiments. While one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope defined by the following claims (including equivalents thereof).