阅读说明：本技术 显示面板及其制备方法 (Display panel and preparation method thereof ) 是由 张鑫 冼志科 李吉 于 2020-06-08 设计创作，主要内容包括：本申请提供一种显示面板及其制备方法,显示面板包括基板、薄膜晶体管层、反射层和迷你发光二极管,薄膜晶体管层设置于基板上,反射层由一第一分层、若干第二分层和若干第三分层组成,第一分层采用第一种折射率材料形成,若干第二分层采用第二种折射率材料形成,若干第三分层采用第三种折射率材料形成,反射层具有通孔,通孔暴露薄膜晶体管层,迷你发光二极管设置于通孔中,以电连接薄膜晶体管层。通过两种不同的折射率材料交替层叠设置形成反射层,提高了迷你发光二极管的光利用率,并降低了功率消耗,进而提高了显示面板的性能。(The application provides a display panel and a preparation method thereof, the display panel comprises a substrate, a thin film transistor layer, a reflecting layer and mini light-emitting diodes, the thin film transistor layer is arranged on the substrate, the reflecting layer is composed of a first layering, a plurality of second layering and a plurality of third layering, the first layering is formed by adopting a first refractive index material, the second layering is formed by adopting a second refractive index material, the third layering is formed by adopting a third refractive index material, the reflecting layer is provided with a through hole, the through hole exposes the thin film transistor layer, the mini light-emitting diodes are arranged in the through hole, and the thin film transistor layer is electrically connected. The reflecting layer is formed by alternately laminating two different refractive index materials, so that the light utilization rate of the mini light-emitting diode is improved, the power consumption is reduced, and the performance of the display panel is improved.)

1. A display panel, comprising:

a substrate;

a thin-film transistor layer disposed on the substrate;

the reflecting layer is composed of a first layered layer, a plurality of second layered layers and a plurality of third layered layers, the first layered layer is arranged on the thin film transistor layer, the plurality of second layered layers and the plurality of third layered layers are sequentially and alternately arranged on the first layered layer in a stacked mode, the first layered layer is made of a first refractive index material, the second layered layer is made of a second refractive index material, the third layered layer is made of a third refractive index material, the reflecting layer is provided with a through hole, and the through hole exposes the thin film transistor layer; and

and the mini light-emitting diode is arranged in the through hole so as to be electrically connected with the thin film transistor layer.

2. The display panel of claim 1, wherein the refractive index of the first refractive index material is less than the refractive index of the second refractive index material, and the refractive index of the third refractive index material is less than the refractive index of the first refractive index material.

3. The display panel of claim 1, wherein the first refractive index material has a refractive index of 1.90-2.11, the second refractive index material has a refractive index of 2.2-4.6, and the third refractive index material has a refractive index of 1.35-1.55.

4. The display panel of claim 1, wherein the first segment has a thickness of 45 nm to 54 nm, the second segment has a thickness of 15 nm to 25 nm, and the third segment has a thickness of 100 nm to 130 nm.

5. The display panel of claim 1, wherein the first refractive index material is SiNx and the second refractive index material comprises SiO₂And MgF, the third refractive index material comprises ZnS and TiO₂And one or more of Si.

6. A method for manufacturing a display panel, comprising:

a substrate;

forming a thin film transistor layer on the substrate;

arranging a first refractive index material on the thin film transistor layer to form a first layered layer;

sequentially and alternately laminating a second refractive index material and a third refractive index material on the first lamination layer to form a plurality of second lamination layers and a plurality of third lamination layers, wherein the first lamination layer, the plurality of second lamination layers and the plurality of third lamination layers form reflecting layers;

etching the reflecting layer to form a through hole, wherein the through hole exposes the thin film transistor layer;

and arranging a mini light-emitting diode in the through hole to be electrically connected with the thin film transistor layer.

7. The method of claim 6, wherein the first refractive index material has a refractive index less than the refractive index of the second refractive index material, and the third refractive index material has a refractive index less than the refractive index of the first refractive index material.

8. The method of claim 6, wherein the first refractive index material has a refractive index of 1.90 to 2.11, the second refractive index material has a refractive index of 2.2 to 4.6, and the third refractive index material has a refractive index of 1.35 to 1.55.

9. The method of manufacturing a display panel according to claim 6, wherein the first layered layer has a thickness of 45 nm to 54 nm, the second layered layer has a thickness of 15 nm to 25 nm, and the third layered layer has a thickness of 100 nm to 130 nm.

10. The method of claim 6, wherein the first refractive index material is SiNx and the second refractive index material comprises SiO₂And MgFA combination, the third refractive index material comprising ZnS, TiO₂And one or more of Si.

Technical Field

The application relates to the field of display, in particular to a display panel and a preparation method thereof.

Background

In the prior art, as a backlight of a liquid crystal display, in order to improve the light utilization rate of a light emitting diode, a reflective film is generally attached to a light emitting diode substrate, so that light emitted by the light emitting diode and light reflected by a diffusion film above the light emitting diode are reflected into the liquid crystal display again, but the thickness of the attached reflective film is relatively thick, which affects the light utilization rate of the light emitting diode, further increases the cost, and affects the performance of a display panel; the manufacturing process of the reflective film is not compatible with the conventional transistor process, which increases the cost and increases the production cycle of the product.

Disclosure of Invention

The application provides a display panel and a preparation method thereof, which are used for improving the performance of the display panel.

A display panel, comprising:

a substrate;

a thin-film transistor layer disposed on the substrate;

the reflecting layer is composed of a first layered layer, a plurality of second layered layers and a plurality of third layered layers, the first layered layer is arranged on the thin film transistor layer, the plurality of second layered layers and the plurality of third layered layers are sequentially and alternately arranged on the first layered layer in a stacked mode, the first layered layer is made of a first refractive index material, the plurality of second layered layers are made of a second refractive index material, the plurality of third layered layers are made of a third refractive index material, the reflecting layer is provided with a through hole, and the through hole exposes the thin film transistor layer; and

and the mini light-emitting diode is arranged in the through hole so as to be electrically connected with the thin film transistor layer.

In the display panel provided by the application, the refractive index of the first refractive index material is smaller than that of the second refractive index material, and the refractive index of the third refractive index material is smaller than that of the first refractive index material.

In the display panel provided by the application, the refractive index of the first refractive index material is 1.90-2.11, the refractive index of the second refractive index material is 2.2-4.6, and the refractive index of the third refractive index material is 1.35-1.55.

In the display panel provided by the application, the thickness of the first layered layer is 45 nm-54 nm, the thickness of the second layered layer is 15 nm-25 nm, and the thickness of the third layered layer is 100 nm-130 nm.

In the display panel provided by the present application, the first refractive index material is SiNx, and the second refractive index material includes SiO₂And MgF, the third refractive index material comprises ZnS and TiO₂And one or more of Si.

The application provides a preparation method of a display panel, which comprises the following steps:

a substrate;

forming a thin film transistor layer on the substrate;

arranging a first refractive index material on the thin film transistor layer to form a first layered layer;

sequentially and alternately laminating a second refractive index material and a third refractive index material on the first layer to form a plurality of second layers and a plurality of third layers, wherein the first layer, the plurality of second layers and the third layers form reflecting layers;

etching the reflecting layer to form a through hole, wherein the through hole exposes the thin film transistor layer;

and arranging a mini light-emitting diode in the through hole to be electrically connected with the thin film transistor layer.

In the method for manufacturing a display panel, the refractive index of the first refractive index material is smaller than that of the second refractive index material, and the refractive index of the third refractive index material is smaller than that of the first refractive index material.

In the method for manufacturing the display panel, the refractive index of the first refractive index material is 1.90-2.11, the refractive index of the second refractive index material is 2.2-4.6, and the refractive index of the third refractive index material is 1.35-1.55.

In the preparation method of the display panel, the thickness of the first layered layer is 45 nm-54 nm, the thickness of the second layered layer is 15 nm-25 nm, and the thickness of the third layered layer is 100 nm-130 nm.

In the preparation method of the display panel provided by the application, the first refractive index material is SiNx, and the second refractive index material comprises SiO₂And MgF, the third refractive index material comprises ZnS and TiO₂And one or more of Si.

The application provides a display panel and a preparation method thereof, the display panel comprises a substrate, a thin film transistor layer, a reflecting layer and a mini light emitting diode, the thin film transistor layer is arranged on the substrate, the reflecting layer is composed of a first layered layer, a plurality of second layered layers and a plurality of third layered layers, the first sub-layer is arranged on the thin film transistor layer, a plurality of the second sub-layers and a plurality of the third sub-layers are sequentially and alternately stacked on the first sub-layer, the first sub-layers are formed of a first refractive index material, a plurality of the second sub-layers are formed of a second refractive index material, a plurality of the third sub-layers are formed of a third refractive index material, the reflecting layer is provided with a through hole, the through hole exposes the thin film transistor layer, and the mini light emitting diode is arranged in the through hole to be electrically connected with the thin film transistor layer. In this application, it is a plurality of second layering and a plurality of third layering is in turn stacked set up in form the reflection stratum on the first layering, it is a plurality of first layering is formed by first refractive index material, and is a plurality of the second layering is formed by second refractive index material, and is a plurality of the third layering is formed by third refractive index material, the reflection stratum adopts the high refractive index layering to set up in low refractive index layering both sides, has improved mini emitting diode's light utilization ratio to reduce power consumption, and then improved display panel's performance.

Drawings

In order to more clearly illustrate the technical solutions in the present application, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a cross-sectional view of a display panel provided in the present application.

Fig. 2 is a structural cross-sectional view of a thin film transistor provided in the present application.

Fig. 3 is a schematic view of a reflective layer structure and a light reflection path thereof according to the present application.

Fig. 4 is a schematic diagram of a reflection curve of a reflective layer provided in the present application.

Fig. 5 is a schematic view of another reflective layer structure and a light reflection path thereof according to the present application.

Fig. 6 is a cross-sectional flow diagram of a method for manufacturing a display panel provided in the present application.

Detailed Description

The technical solution in the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It should be apparent that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any inventive step based on the embodiments in the present application, are within the scope of protection of the present application.

The present application provides a display panel. Referring to fig. 1, fig. 1 is a cross-sectional view of a display panel provided in the present application. The display panel 10 includes a substrate 100, a thin film transistor layer 200, a reflective layer 300, and a mini light emitting diode 400.

A substrate 100, the substrate 100 may be a glass substrate.

Referring to fig. 2, fig. 2 is a cross-sectional view of a thin film transistor provided in the present application. The thin-film transistor layer 200 is disposed on the substrate 100. The thin film transistor layer 200 includes a thin film transistor 210, and the thin film transistor 210 includes a gate 201, a first protective layer 202, a gate insulating layer 203, an active layer 204, a source electrode 205, a drain electrode 206, and a second protective layer 207. The first protective layer 202 covers the gate 201. The material of the gate 201 includes one or a combination of Mo, Al, Ti, In and Ga. The gate insulating layer 203 is disposed on the first protection layer 202. The material of the gate insulating layer 203 includes Al₂O₃SiOx and SiN_XOne or a combination of several of them. The active layer 204 is disposed on the gate insulating layer 203. The material of the active layer 204 includes amorphous silicon. The source 205 is disposed at one end of the gate insulating layer 203 and one end of the active layer 204. The drain electrode 206 is disposed at the other end of the gate insulating layer 203 and the other end of the active layer 204. The source 205 and the drain 206 are insulated from each other. The second protective layer 207 covers the source 205, the drain 206, and the gate insulating layer 203. The second protection layer 207 is used to protect the structures in the thin film transistor 210 from other structures or water and oxygen affecting the thin film transistor layer 200. The thin film transistor 210 includes other structures besides the structure shown in fig. 2, which are not listed here.

Referring to fig. 3, fig. 3 is a schematic view of a reflective layer structure and a light reflection path thereof according to the present application. A reflective layer 300, the reflective layer 300 being disposed on the thin-film transistor layer 200. The reflective layer 300 includes a first sublayer 310, second sublayers 320, and third sublayers 330. The first delamination layer 310 is disposed on the thin-film-transistor layer 200. A plurality of the second divided layers 320 and a plurality of the third divided layers 303 are alternately stacked on the first divided layer 310. In this embodiment, the reflective layer has a 4-layered structure. That is, the reflective layer is formed on the first layered layer by alternately laminating two materials having different refractive indexes in this order. Specifically, a second laminate 320, a third laminate 330 and a fourth laminate 340 are sequentially stacked on the first laminate 310. The first laminate layer 310, the second laminate layer 320, the third laminate layer 330, and the fourth laminate layer 340 constitute a reflective layer 300. The reflective layer 300 is a distributed bragg reflector. The first segment 310 is formed using a first refractive index material. The first refractive material is a high refractive index material. The second segment 320 and the fourth segment 340 are formed using a second refractive index material. The second refractive index material is a high refractive index material. The second refractive index material has a refractive index greater than the refractive index of the first refractive index material. The third segment 330 is formed using a third refractive index material. The third refractive index material is a low refractive index material. The third refractive index material has a refractive index less than the refractive index of the first refractive index material. The reflective layer 300 has a through hole 301. The via 301 exposes the thin-film-transistor layer 200.

Referring to fig. 4, fig. 4 is a schematic view illustrating a reflection curve of a reflective layer provided in the present application. When light passes through a layered interface formed by two materials with different refractive indexes, the light is reflected by the reflecting layer 300, and the light reflected by each layer is subjected to constructive interference due to the change of a phase angle and then combined with each other to obtain strong reflected light, so that the light utilization rate of the mini light-emitting diode is improved, the power consumption is reduced, and the performance of the display panel is improved. The reflection of light by the reflective layer 300 is more than 75% between 400 nm and 690 nm, and more specifically, the reflection of light by the reflective layer 300 is more than 80% between 530 nm and 590 nm. The first sub-layer 310 serves to protect the structure of the reflective layer 300 in addition to having a reflective effect on light.

In another embodiment, the first refractive index material has a refractive index of 1.90-2.11. The second refractive index material has a refractive index of 2.2-4.6. The third refractive index material has a refractive index of 1.35 to 1.55.

In another embodiment, the first refractive index material is SiNx. The second refractive index material comprises SiO₂And MgF, or a combination of the two. The third refractive index material comprises ZnS and TiO₂And one or more of Si.

In another embodiment, the thickness of the first delamination layer 310 is between 45 nm and 54 nm. The thickness of the second segment 320 and the fourth segment 340 is 15 nm to 25 nm. The thickness of the third layer 330 is 100 nm to 130 nm.

Referring to fig. 5, fig. 5 is a schematic view of another reflective layer structure and a light reflection path thereof according to the present application. In another embodiment, the second sublayer 320, the third sublayer 330, and the fourth sublayer 340 form the distributed bragg reflector layer 300.

The bottom of the mini led 500 is provided with a metal paste layer 400. The mini led 500 with the metal paste layer 400 is disposed in the via hole 301 to electrically connect the thin-film transistor layer 200. The material of the metal layer 400 includes one or a combination of Sn, In, Bi, Cu, Al, and Mo. In this embodiment, the metal paste layer 500 is a tin paste layer.

In this application, set up mini emitting diode on a metal paste layer, have mobility and adhesion because of the metal paste layer, later will set up in mini emitting diode's metal paste layer solidification, and then be fixed in mini emitting diode on the metal paste layer, set up the mini emitting diode who has the metal paste layer in the through-hole, and then will mini emitting diode is fixed in on the thin film transistor layer, avoid mini emitting diode to lose at preparation or the in-process that uses, influenced display panel's performance.

The application provides a display panel, in display panel, with the structure setting of reflection stratum is formed by high refractive index material and low refractive index material, the layering that is formed by low refractive index is located between the layering that is formed by high refractive index material, make the structure of reflection stratum present high-low-high structure, when light passes through the reflection stratum, because light that each layer reflects back carries out constructive interference because of the change of phase angle, then combine together each other, obtain strong reverberation, improved the reflectivity of reflection stratum, improved mini emitting diode's light utilization ratio, and reduced the consumption, and, the reflection stratum reflection bandwidth of reflection stratum is big, can regard as the reflection stratum of white backlight, simultaneously, the reflection stratum simple structure, it is compatible good with thin film transistor processing procedure, with low costs, and then improved display panel's performance, and the manufacturing cost of the display panel is reduced.

Referring to fig. 6, fig. 6 is a cross-sectional flow diagram illustrating a method for manufacturing a display panel according to the present disclosure. The present application further provides a method for manufacturing a display panel 10, including:

11. thin-film-transistor layer 200 is formed on substrate 100.

A substrate 100 is provided. The substrate 100 may be a glass substrate. Thin-film-transistor layer 200 is formed on substrate 100. The thin film transistor layer 200 includes a thin film transistor 210, and the thin film transistor 210 includes a gate 201, a first protective layer 202, a gate insulating layer 203, an active layer 204, a source electrode 205, a drain electrode 206, and a second protective layer 207. The first protective layer 202 covers the gate 201. The material of the gate 201 includes one or a combination of Mo, Al, Ti, In and Ga. The gate insulating layer 203 is disposed on the first protection layer 202. The material of the gate insulating layer 203 includes Al₂O₃SiOx and SiN_XOne or a combination of several of them. The active layer 204 is disposed on the gate insulating layer 203. The material of the active layer 204 includes amorphous silicon. The source 205 is disposed at one end of the gate insulating layer 203 and one end of the active layer 204. The drain electrode 206 is disposed at the other end of the gate insulating layer 203 and the other end of the active layer 204. The source 205 and the drain 206 are insulated from each other. The second protective layer 207 covers the source 205, the drain 206, and the gate insulating layer 203. The second protection layer 207 is used to protect the structure of the thin film transistor layer 200 and prevent other structures or water and oxygen from affecting other structures in the thin film transistor 210. The thin film transistor 210 includes other structures besides the structure shown in fig. 2, which are not listed here.

12. A first delamination layer 310 is formed on the thin-film-transistor layer 200.

A first refractive index material is deposited on thin-film-transistor layer 200 to form first layer 310. The first refractive index material is a high refractive index material.

In another embodiment, the first refractive index material has a refractive index of 1.90-2.11.

In another embodiment, the first refractive index material is SiNx.

In another embodiment, the first layer has a thickness of 45 nm to 54 nm.

13. Second and third sub-layers 320 and 330 are alternately stacked on the first sub-layer 310 in this order.

Referring to fig. 4, fig. 4 is a schematic view of a reflective layer structure and a light reflection path thereof according to the present application. Second and third refractive index materials are alternately stacked on the first sub-layer 310 to form second sub-layers 320 and third sub-layers 330. Specifically, a second refractive index material, a third refractive index material, and a second refractive index material are stacked on the first segment 310 to form a second segment 320, a third segment 330, and a fourth segment 340. The first sublayer 310, the second sublayer 320, the third sublayer 330, and the fourth sublayer form a reflective layer 300. The reflective layer 300 is a distributed bragg reflector, which is a structure that reflects at the interface when light passes through different media. The material of the second sub-layer 320 and the fourth sub-layer 340 is the same material. The second refractive index material is a high refractive index material. The third refractive index material is a low refractive index material. The first refractive index material has a refractive index less than the refractive index of the second refractive index material. The third refractive index material has a refractive index less than the refractive index of the first refractive index material.

In another embodiment, the second refractive index material has a refractive index of 2.2-4.6. The third refractive index material has a refractive index of 1.35 to 1.55.

In another embodiment, the second refractive index material comprises SiO₂And MgF, or a combination of the two. The third refractive index material comprises ZnS and TiO₂And one or more of Si.

In another embodiment, the thickness of the second segment 320 and the fourth segment 340 is 15 nm to 25 nm. The thickness of the third layer 330 is 100 nm to 130 nm.

In the application, the structure of the reflecting layer of the display panel is formed by adopting high refractive index materials and low refractive index materials, the layered structure is formed by layers formed by the high refractive index materials, layers formed by the low refractive index materials and layers formed by the high refractive index materials, the layers formed by the low refractive index materials are arranged between the layers formed by the high refractive index materials, when light passes through the reflecting layer, the light is reflected when the light passes through the adjacent layers formed by the materials with different refractive indexes, the light reflected by the layers is constructively interfered due to the change of phase angles and then combined with each other to obtain strong reflected light, the reflectivity of the reflecting layer to the light is improved, the mini light emitting diode backlight is combined with the reflecting layer structure, the light utilization rate of the mini light emitting diode is improved, and the power consumption is reduced, meanwhile, the reflecting layer has a simple structure, is good in compatibility with a thin film transistor manufacturing process, is low in preparation cost and easy to realize, further improves the performance of the display panel and reduces the preparation cost of the display panel.

Referring to fig. 5, fig. 5 is a schematic view of another reflective layer structure and a light reflection path thereof according to the present application. In another embodiment, the second sublayer 320, the third sublayer 330, and the fourth sublayer 340 form the distributed bragg reflector layer 300.

14. The reflective layer 300 is etched to form a through hole 301, and the through hole 301 exposes the thin-film transistor layer 200.

The reflective layer 300 is dry etched to form the through hole 301. The method for etching the through hole 301 in the reflective layer 300 is not limited, and a corresponding etching method may be adopted according to specific requirements.

15. Mini led 500 is disposed in through hole 301 to electrically connect thin-film-transistor layer 200.

The bottom of the mini led 500 is provided with a metal paste layer 400. The mini led 500 with the metal paste layer 400 is disposed in the via hole 301. The material of the metal paste layer 400 includes one or a combination of several of Sn, In, Bi, Cu, Al, and Mo. In this embodiment, the metal paste layer 400 is a tin paste layer.

In this application, set up mini emitting diode on a metal paste layer, have mobility and adhesion because of the metal paste layer, later will set up in mini emitting diode's metal paste layer solidification, and then be fixed in mini emitting diode on the metal paste layer, set up the mini emitting diode who has the metal paste layer in the through-hole, and then will mini emitting diode is fixed in on the thin film transistor layer, avoid mini emitting diode to lose at preparation or the in-process that uses, influenced display panel's performance.

The application provides a display panel and a preparation method thereof, in the preparation method of the display panel, the structure of a reflecting layer is formed by adopting a high refractive index material and a low refractive index material, the presented layered structure comprises a layered layer formed by the high refractive index material, a layered layer formed by the low refractive index material and a layered layer formed by the high refractive index material, the layered layer formed by the low refractive index material is arranged between the layered layers formed by the high refractive index material, when light passes through the reflecting layer, the light can be reflected on the interface of the two layered layers with different refractive indexes, the light reflected by each layer is constructively interfered due to the change of a phase angle and then combined together to obtain strong reflected light, the reflectivity of the reflecting layer is improved, the reflecting layer has a simple structure, is good in compatibility with a thin film transistor process, low in preparation cost and easy to realize, the preparation efficiency of the display panel is improved, and the preparation cost of the display panel is reduced.

The foregoing provides a detailed description of embodiments of the present application, and the principles and embodiments of the present application have been described herein using specific examples, which are presented solely to aid in the understanding of the present application. Meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.