TFT array substrate, display panel thereof and terminal device thereof
阅读说明：本技术 一种tft阵列基板、其显示面板及其终端装置 (TFT array substrate, display panel thereof and terminal device thereof ) 是由 杨薇薇 余赟 陈诚 于 2019-10-29 设计创作，主要内容包括：本发明提供了一种TFT阵列基板其显示面板。其中所述TFT阵列基板包括衬底层，所述衬底层上设置有缓冲层，所述缓冲层上依次设置有源层(Active)、第一栅极绝缘层(GI1)、第一栅极层(GE1)、层间介质层(ILD)以及源漏极层(SD)。所述第一栅极绝缘层包括SiNx层，所述第一栅极层包括AL金属层。本发明提供了一种TFT阵列基板，其具有较为良好的自身弯折性能。(The invention provides a TFT array substrate and a display panel thereof. The TFT array substrate comprises a substrate layer, wherein a buffer layer is arranged on the substrate layer, and an Active layer (Active), a first gate insulation layer (GI1), a first gate layer (GE1), an interlayer dielectric layer (ILD) and a source drain layer (SD) are sequentially arranged on the buffer layer. The first gate insulating layer includes a SiNx layer, and the first gate layer includes an AL metal layer. The invention provides a TFT array substrate which has better self-bending performance.)
1. A TFT array substrate comprises a substrate layer, wherein a buffer layer is arranged on the substrate layer, and an active layer, a first grid insulation layer, a first grid layer, an interlayer dielectric layer and a source drain layer are sequentially arranged on the buffer layer; it is characterized in that the preparation method is characterized in that,
the first gate insulating layer includes a SiNx layer, and the first gate layer includes an AL metal layer.
2. The TFT array substrate of claim 1; the first grid insulating layer is of a double-lamination structure formed by SiOx/SiNx double-layer materials.
3. The TFT array substrate of claim 1; the first grid layer is any one of a Ti/Al/Ti tri-stack structure, an Al/Ti double-stack structure, an AL alloy single-layer structure and an AL alloy/TiNx double-stack structure.
4. The TFT array substrate of claim 1; it is characterized by also comprising:
a second gate insulating layer disposed on the first gate layer;
a second gate electrode layer disposed on the second gate insulating layer;
the interlayer dielectric layer is arranged on the second gate layer.
5. The TFT array substrate of claim 4; it is characterized in that the preparation method is characterized in that,
the second grid electrode insulating layer is of a double-lamination structure formed by SiOx/SiNx double-layer materials.
6. The TFT array substrate of claim 4; it is characterized in that the preparation method is characterized in that,
the second gate layer is of any one structure of a Ti/Al/Ti three-lamination structure, an Al/Ti double-lamination structure, an AL alloy single-layer structure and an AL alloy/TiNx double-lamination structure.
7. The TFT array substrate of claim 4; the pixel structure is characterized in that a flat layer (PLN), an Anode (ANO) and a Pixel Definition Layer (PDL) are sequentially arranged on the interlayer dielectric layer.
8. A display panel; the TFT array substrate according to claim 1.
9. The display panel according to claim 8; it is characterized by also comprising:
the light emitting layer is arranged on one side of the TFT array substrate;
and the packaging layer is arranged on one side of the light-emitting layer, which is far away from the TFT array substrate.
10. A kind of terminal device; characterized in that it comprises a display panel according to claim 9.
Technical Field
The present invention relates to the field of flat display panel technology, and more particularly, to a TFT array substrate, a display panel thereof, and an applicable terminal device thereof.
Background
As the development of display technology continues, it is known that the flat panel display technology has replaced the crt (cathode Ray tube) display technology to become the mainstream display technology.
Among them, the flat panel display related to the flat panel display technology is Liquid Crystal Display (LCD) at first, but with the continuous development of the display technology, the OLED Organic Light-Emitting Diode (OLED) type flat panel display is developed in the industry.
The OLED display has advantages of light weight, self-luminescence, wide viewing angle, low driving voltage, high luminous efficiency, low power consumption, fast response speed, and the like, and thus has an increasingly wide application range. Especially, the flexible OLED display has been a main subject of research and development in the field of display technology due to its characteristics of being bendable and portable.
Currently, as a TFT array substrate for driving an OLED, a metal Mo material is generally used for a gate material of a Thin Film Transistor (TFT) disposed thereon, but due to its material characteristics, the metal material has poor bending resistance, so that its application in a flexible display device is greatly limited.
Therefore, in the development process of the flexible display device, selecting a suitable gate material of the thin film transistor, and accordingly developing a thin film transistor device with a reasonable structure and related processes thereof have become important issues of current research in the industry.
Therefore, there is a need to develop a new TFT array substrate to overcome the defects of the prior art.
Disclosure of Invention
One aspect of the present invention is to provide a TFT array substrate having a good self-bending property.
The technical scheme adopted by the invention is as follows:
a TFT array substrate includes a substrate layer. The substrate layer is provided with a buffer layer, and the buffer layer is sequentially provided with an Active layer (Active), a grid electrode insulating layer (GI), a grid electrode layer (GE), an interlayer dielectric layer (ILD) and a source drain electrode layer (SD). Wherein the first gate insulating layer comprises a SiNx layer, and the first gate layer comprises an AL metal layer.
Further, in various embodiments, the first gate insulating layer has a dual-layer structure formed by SiOx/SiNx dual-layer materials.
Further, in various embodiments, the first gate layer has any one of a Ti/Al/Ti tri-stack structure, an Al/Ti dual-stack structure, an Al alloy single-layer structure, and an Al alloy/TiNx dual-stack structure.
Further, in various embodiments, the TFT array substrate further includes:
a second gate insulating layer disposed on the first gate layer;
a second gate electrode layer disposed on the second gate insulating layer;
the interlayer dielectric layer is arranged on the second gate layer.
Further, in various embodiments, the second gate insulating layer has a dual-layer structure formed by SiOx/SiNx dual-layer materials.
Further, in various embodiments, the second gate layer has any one of a Ti/Al/Ti tri-stack structure, an Al/Ti dual-stack structure, an Al alloy single-layer structure, and an Al alloy/TiNx dual-stack structure.
Further, in various embodiments, a Planarization Layer (PLN), an Anode (ANO), and a Pixel Definition Layer (PDL) are sequentially disposed on the interlayer dielectric layer.
Further, in various embodiments, a support Pillar (PS) is further disposed on the pixel definition layer.
Further, in various embodiments, a barrier layer (M/B) is further disposed between the substrate layer and the buffer layer.
Further, another aspect of the present invention is to provide a display panel including the TFT array substrate according to the present invention.
Further, in various embodiments, wherein the display panel comprises:
the light-emitting layer is arranged on one side of the TFT array substrate;
and the packaging layer is arranged on one side of the light-emitting layer, which is far away from the TFT array substrate.
Further, another aspect of the present invention is to provide a terminal device including the display panel according to the present invention. Wherein the terminal device is preferably a mobile terminal device including but not limited to a cell phone, tablet, etc.
Compared with the prior art, the invention has the beneficial effects that: according to the TFT array substrate, Ti/Al/Ti or Al/Ti with good bending performance is used as the grid electrode layer to form the grid electrode layer, so that the bending performance of the grid electrode layer can be effectively improved, and the bending performance of the TFT array substrate is further improved.
Furthermore, because the gate layer is made of a novel Ti/Al/Ti or Al/Ti material, the gate layer has H atoms released by the SiNx capturing material to a certain extent, so that the hydrogen atoms released by the SiNx forming material of the second gate insulating layer (GI2) above the gate layer cannot repair the defects between the interfaces of the active layer (Poly type) and the first gate insulating layer (GI1) below the gate layer in the hydrogen activation process, and the electrical property of the TFT is abnormal. In contrast, the structure of the first gate insulating layer (GI1) is replaced by a SiOx/SiNx double-stack structure, and hydrogen is supplemented in advance through the SiNx film layer, so that the electrical property of the TFT is effectively improved, and the defect caused by the adoption of a novel material for the first gate layer is overcome.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a TFT array substrate according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a display panel according to an embodiment of the present invention; and
fig. 3 is a schematic structural diagram of a terminal device according to an embodiment of the present invention.
Detailed Description
The following describes a TFT array substrate and a display panel thereof in further detail with reference to the accompanying drawings and embodiments.
Referring to fig. 1, one embodiment of the present invention provides a TFT array substrate, which includes a
The
Further, a Planarization Layer (PLN)110, an Anode (ANO)111 and a Pixel Definition Layer (PDL)112 are sequentially disposed on the source/
Further, the gate insulating layer specifically includes a first
Wherein the first gate layer 115 has a tri-layer structure formed by Ti/Al/Ti tri-layer materials or a dual-layer structure formed by Al/Ti bi-layer materials. The second gate layer 117 is also preferably a tri-layer stack of Ti/Al/Ti tri-layer materials or a stack of Al/Ti bi-layer materials.
The first
Further, another embodiment of the present invention provides a display panel using the array substrate according to the present invention. Wherein the display panel is preferably an OLED display panel, but is not limited thereto.
As shown in fig. 2, it illustrates a display panel according to the present invention, which includes the
Further, another embodiment of the present invention provides a terminal device, which is shown in fig. 3 and includes a
The invention relates to a TFT array substrate, which adopts TiAlTi or Al/Ti with better bending performance as a grid electrode material to form the grid electrode layer, thereby effectively improving the bending performance of the grid electrode layer and further improving the bending performance of the TFT array substrate.
Furthermore, because the gate layer is made of a novel Ti/Al/Ti or Al/Ti material, the gate layer has H atoms released by the SiNx capturing material to a certain extent, so that the hydrogen atoms released by the SiNx forming material of the second gate insulating layer (GI2) above the gate layer cannot repair the defects between the interfaces of the active layer (Poly type) and the first gate insulating layer (GI1) below the gate layer in the hydrogen activation process, and the electrical property of the TFT is abnormal. In contrast, the structure of the first gate insulating layer (GI1) is replaced by a SiOx/SiNx double-stack structure, and hydrogen is supplemented in advance through the SiNx film layer, so that the electrical property of the TFT is effectively improved, and the defect caused by the adoption of a novel material for the first gate layer is overcome.
The technical scope of the present invention is not limited to the contents described in the above description, and those skilled in the art can make various changes and modifications to the above-described embodiments without departing from the technical spirit of the present invention, and these changes and modifications should fall within the scope of the present invention.
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