阅读说明：本技术 用于制备锗-硅-层的三苯基甲锗烷基甲硅烷和三氯甲硅烷基-三氯甲锗烷以及由三氯甲硅烷基-三苯基甲锗烷制备其的方法 (Triphenylgermylsilyl and trichlorosilyl-trichlorogermyl for producing germanium-silicon layers and method for producing the same from trichlorosilyl-triphenylgermyl ) 是由 J.泰希曼 M.瓦格纳 H-W.莱尔纳 于 2018-05-23 设计创作，主要内容包括：用于制备锗-硅-层(Ge-Si)或作为甲硅烷基团(SiH<Sub>3</Sub>)的转移剂的三苯基甲锗烷基甲硅烷(Ph<Sub>3</Sub>Ge-SiH<Sub>3</Sub>)。通过在溶液中用氢化物还原三氯甲硅烷基-三苯基甲锗烷(Ph<Sub>3</Sub>Ge-SiCl<Sub>3</Sub>)来制备三苯基甲锗烷基甲硅烷(Ph<Sub>3</Sub>Ge-SiH<Sub>3</Sub>)的方法。通过在溶液中在AlCl<Sub>3</Sub>存在下使三氯甲硅烷基三苯基甲锗烷(Ph<Sub>3</Sub>Ge-SiCl<Sub>3</Sub>)与氯化氢(HCl)反应来制备三氯甲硅烷基三氯甲锗烷(Cl<Sub>3</Sub>Ge-SiCl<Sub>3</Sub>)的方法。三氯甲硅烷基三氯甲锗烷用于制备锗-硅-层(Ge-Si)的用途。(For producing germanium-silicon layers (Ge-Si) or as silyl groups (SiH) 3 ) Triphenylgermylsilyl (Ph) of the transfer agent of (a) 3 Ge‑SiH 3 ). By reduction of the trichlorosilyl-triphenylgermyle (Ph) with hydride in solution 3 Ge‑SiCl 3 ) To prepare triphenylgermylsilyl (Ph) 3 Ge‑SiH 3 ) The method of (1). By dissolving in AlCl 3 Reacting trichlorosilyltriphenylgermane (Ph) in the presence of 3 Ge‑SiCl 3 ) Reaction with hydrogen chloride (HCl) to produce trichlorosilyltrichlorogermane (Cl) 3 Ge‑SiCl 3 ) The method of (1). Use of trischlorosilyltrischloromgermane for producing a germanium-silicon layer (Ge-Si).)