阅读说明：本技术 制造铁电随机存取存储器的方法 (Method for manufacturing ferroelectric random access memory ) 是由 孙山 于 2016-07-18 设计创作，主要内容包括：涉及制造铁电随机存取存储器的方法。描述了F-RAM单元的结构和制造方法。F-RAM单元包括形成在预先图案化的阻挡结构之上和形成有预先图案化的阻挡结构的铁电电容器,预先图案化的阻挡结构具有平坦化/化学和/或机械抛光的顶表面。预先图案化的阻挡结构包括具有在阻氧层上的底部电极层的结构的多个阻氧层。底部电极层形成在其上形成的铁电电容器的底部电极的至少一部分。(To a method of fabricating a ferroelectric random access memory. Structures and fabrication methods of F-RAM cells are described. The F-RAM cell includes a ferroelectric capacitor formed over and with a pre-patterned barrier structure having a planarized/chemically and/or mechanically polished top surface. The pre-patterned barrier structure includes a plurality of oxygen barrier layers having a structure of a bottom electrode layer on the oxygen barrier layers. The bottom electrode layer forms at least a portion of a bottom electrode of a ferroelectric capacitor formed thereon.)