阅读说明：本技术 一种三维存储器的控制方法、装置及存储介质 (Control method and device of three-dimensional memory and storage medium ) 是由 宋雅丽 于 2019-08-09 设计创作，主要内容包括：本发明实施例提供了一种三维存储器的控制方法、装置及存储介质。其中,所述方法包括：确定对选择的第一字线进行读取操作；所述选择的第一字线为所述三维存储器的多个字线中的至少一个；在所述第一字线上施加第一电压；其中,所述第一电压用于导通所述第一字线上的存储单元管；所述第一电压高于第二电压；所述第二电压为确定对除所述第一字线外的其它字线进行读取操作时,在所述其它字线上施加的电压；所述第二电压用于导通所述其它字线上存储单元管。本发明实施例通过在对第一字线进行读取操作时,加大三维存储器中选择的第一字线上的读导通电压,以增大流经第一字线上存储单元管中的电流,从而提高三维存储中的沟道电流。(the embodiment of the invention provides a control method and device of a three-dimensional memory and a storage medium. Wherein the method comprises the following steps: determining to perform a read operation on the selected first word line; the selected first word line is at least one of a plurality of word lines of the three-dimensional memory; applying a first voltage on the first word line; the first voltage is used for turning on a storage unit tube on the first word line; the first voltage is higher than the second voltage; the second voltage is a voltage applied to other word lines except the first word line when the other word lines are determined to be subjected to read operation; the second voltage is used for turning on the storage unit tubes on the other word lines. According to the embodiment of the invention, when the first word line is read, the read conduction voltage on the selected first word line in the three-dimensional memory is increased, so that the current flowing through the storage unit tube on the first word line is increased, and the channel current in the three-dimensional memory is improved.)

1. a method of controlling a three-dimensional memory, the method comprising:

Determining to perform a read operation on the selected first word line; the selected first word line is at least one of a plurality of word lines of the three-dimensional memory;

applying a first voltage on the first word line; the first voltage is used for turning on a storage unit tube on the first word line; the first voltage is higher than the second voltage; the second voltage is a voltage applied to other word lines except the first word line when the other word lines are determined to be subjected to read operation; the second voltage is used for turning on the storage unit tubes on the other word lines.

2. The method of claim 1, further comprising:

Determining to perform a program operation on the first word line;

Selecting a high-order data state of the first word line to program; the high data state is a higher data state than the erased state.

3. the method of claim 1, wherein the first word line is a word line at an edge location of the three-dimensional memory block structure.

4. The method of claim 1, further comprising:

Dynamically selecting the first word line from all word lines of the three-dimensional memory according to a selection strategy.

5. The method of claim 2, wherein selecting the upper data state of the first word line for programming comprises:

and selecting the high-order data state of each memory cell tube in the first word line for programming.

6. The method of claim 1, wherein determining to perform a read operation on the selected first word line by applying a first voltage on the first word line comprises:

When the read operation on the selected first word line is determined, the first voltage is applied to the grid connected with the first word line.

7. The method of claim 1, wherein the three-dimensional memory is a three-dimensional NAND-type memory.

8. A control apparatus of a three-dimensional memory, comprising:

A first determination unit for determining a read operation to be performed on the selected first word line; the selected first word line is at least one of a plurality of word lines of the three-dimensional memory;

A read operation control unit for applying a first voltage on the first word line; the first voltage is used for turning on a storage unit tube on the first word line; the first voltage is higher than the second voltage; the second voltage is a voltage applied to other word lines except the first word line when the other word lines are determined to be subjected to read operation; the second voltage is used for turning on the storage unit tubes on the other word lines.

9. A control apparatus of a three-dimensional memory, comprising: a processor and a memory configured to store a computer program operable on the processor;

Wherein the processor is adapted to perform the steps of the method of any one of claims 1 to 7 when running the computer program.

10. A storage medium having stored thereon a computer program, characterized in that the computer program realizes the steps of the method of any one of claims 1 to 7 when executed by a processor.