阅读说明：本技术 垂直结构堆叠的磁旋逻辑器件及实现信息存取的方法 (Vertically-stacked magnetic rotation logic device and method for realizing information access ) 是由 张昆 何宇 张悦 赵巍胜 于 2021-06-15 设计创作，主要内容包括：本发明提供了一种垂直结构堆叠的磁旋逻辑器件及实现信息存取的方法,该磁旋逻辑器件包括：输入电极、输出电极、多铁性材料层、磁性材料层、自旋注入材料层以及强自旋轨道耦合材料层；所述多铁性材料层设置有所述输入电极与所述磁性材料层之间,所述自旋注入材料层设置于所述磁性材料层与所述强自旋轨道耦合材料层之间,所述强自旋轨道耦合材料层与所述输出电极连接。本申请的垂直堆叠结构消除了横向桥连结构所导致的底部中空结构,可以极大的简化微纳加工流程,降低微纳加工成本,提高磁旋逻辑器件的加工成功率。(The invention provides a magnetic rotation logic device with a vertical structure stack and a method for realizing information access, wherein the magnetic rotation logic device comprises: the device comprises an input electrode, an output electrode, a multiferroic material layer, a magnetic material layer, a spin injection material layer and a strong spin orbit coupling material layer; the multiferroic material layer is arranged between the input electrode and the magnetic material layer, the spin injection material layer is arranged between the magnetic material layer and the strong spin orbit coupling material layer, and the strong spin orbit coupling material layer is connected with the output electrode. The vertical stacking structure eliminates a bottom hollow structure caused by a transverse bridging structure, can greatly simplify a micro-nano processing flow, reduces the micro-nano processing cost, and improves the processing success rate of the magnetic rotation logic device.)

1. A vertically stacked magnetic spin logic device, comprising: the device comprises an input electrode, an output electrode, a multiferroic material layer, a magnetic material layer, a spin injection material layer and a strong spin orbit coupling material layer;

the multiferroic material layer is arranged between the input electrode and the magnetic material layer, the spin injection material layer is arranged between the magnetic material layer and the strong spin orbit coupling material layer, and the strong spin orbit coupling material layer is connected with the output electrode.

2. The vertically stacked magnetic rotation logic device of claim 1, wherein the multiferroic material layer can be bismuth ferrite, lanthanum-doped bismuth ferrite, terbium manganate, hexaferrite, or hafnium oxide.

3. The vertically stacked magnetic rotary logic device of claim 1, wherein the magnetic material layer may be iron, cobalt, nickel, or an alloy containing at least one of iron, cobalt, nickel, manganese, or a compound containing at least one of iron, cobalt, nickel, manganese.

4. The vertically stacked magnetic spin logic device of claim 1, wherein the spin injection material layer may be magnesium oxide, aluminum oxide, tantalum oxide, or silicon dioxide.

5. The vertically stacked magnetic rotary logic device of claim 1, wherein the layer of strong spin orbit coupling material can be a topological insulator, a epi-semimetal, a complex oxide interface, an oxide/metal interface, or a heavy metal material.

6. A method for implementing information access, applied to the vertically stacked magnetic rotation logic device of claim 1, comprising:

the input electrode receives a writing voltage carrying information to be written;

the information writing unit consisting of the multiferroic material layer and the magnetic material layer realizes the writing of information under the action of the writing voltage;

the information reading unit consisting of the spin injection material layer, the strong spin orbit coupling material layer and the magnetic material layer realizes the reading of information under the action of a working voltage;

the output electrode outputs the information read by the information reading unit.

7. The method of claim 6, wherein when the write voltage is greater than the switching threshold of the multiferroic material layer, the ferroelectric, ferromagnetic/antiferromagnetic order of the multiferroic material layer is switched;

and the magnetization direction of the magnetic material layer is turned over along with the multiferroic material layer, so that the information to be written is written into the magnetic material layer.

8. The method of claim 6, wherein the operating voltage is applied between the magnetic material layer and the strong spin orbit coupling material layer;

under the action of the working voltage, generating a spin current carrying magnetization direction information of the magnetic material layer in the magnetic material layer;

the spin current is injected into the strong spin orbit coupling material layer through the spin injection material layer;

the strong spin orbit coupling material layer converts the spin current into a charge current with a voltage corresponding to the magnetization direction information;

the output electrode outputs the flow of electric charges.

9. The method of claim 6, wherein the output electrode is connectable to an input electrode of another vertically stacked magnetic rotation logic device.

10. The method for enabling information access according to claim 9, further comprising:

the reading voltage output by the output electrode can be used as the writing voltage of the input electrode of another vertically-stacked magnetic rotation logic device connected with the output electrode.

11. A method for fabricating a vertically stacked magnetic rotation logic device as claimed in claim 1, comprising:

sequentially preparing a bottom electrode layer, a multiferroic material layer, a magnetic material layer, a spin injection material layer and a strong spin orbit coupling material layer on a substrate;

processing the shapes of the bottom electrode layer and the material layers into at least one group of strip-shaped stacked structures, wherein the area of the bottom electrode layer in each group is larger than that of each material layer;

filling silicon dioxide to cover the substrate and the bottom electrode layer, wherein the top surface of the silicon dioxide is flush with the top surface of the strong spin orbit coupling material layer;

patterning each material layer, and etching silicon dioxide directly covering the bottom electrode layer to expose part of the bottom electrode layer;

an input electrode is disposed on the exposed bottom electrode layer, and an output electrode is disposed on the layer of strong spin-orbit coupling material.

Technical Field

The present application relates to magnetic memory technology, and more particularly, to a vertically stacked magnetic rotation logic device and a method for accessing information.

Background

Large scale integrated circuits based on Compensated Metal Oxide Semiconductor (CMOS) transistors have enjoyed unprecedented success over the past few decades. With strained silicon technology, new HfO₂Due to the introduction of new technologies or materials such as dielectric layers and fin-type gates, the size of the CMOS transistor is continuously reduced, the integration density of large-scale integrated circuits is continuously improved according to Moore's Law, and the computer performance is continuously broken through. However, as the transistor size reaches the 5nm node, the quantum tunneling effect is increasingly obvious, the leakage current caused by the quantum tunneling effect is also larger, and besides, the boltzmann limit of current control also limits further reduction of the working voltage of the device, and moore's law is about to fail. In the post-molar age, numerous solutions have been proposed, one being spin logic devices that utilize manipulation of electron spins for information storage, such as storage and logic devices based on Spin Transfer Torque (STT) and Spin Orbit Torque (SOT) effects; the other is a magnetic rotation logic device which utilizes the magnetoelectric coupling effect and the inverse spin Hall effect to access information.

However, the existing spin logic devices based on STT and SOT effects still need higher charge flow, and still have the problem of higher power consumption; the existing magnetic rotation logic device is complex in structure and high in manufacturing difficulty, and when the magnetic rotation logic device is used for information writing, the overturning time of the nano magnet is long, so that the power consumption of the magnetic rotation logic device is increased.

Disclosure of Invention

The invention provides a magnetic rotation logic device stacked in a vertical structure, which comprises: the device comprises an input electrode, an output electrode, a multiferroic material layer, a magnetic material layer, a spin injection material layer and a strong spin orbit coupling material layer;

the multiferroic material layer is arranged between the input electrode and the magnetic material layer, the spin injection material layer is arranged between the magnetic material layer and the strong spin orbit coupling material layer, and the strong spin orbit coupling material layer is connected with the output electrode.

In one embodiment, the multiferroic material layer may be bismuth ferrite, lanthanum-doped bismuth ferrite, terbium manganate, hexaferrite, or hafnium oxide.

In an embodiment, the magnetic material layer may be iron, cobalt, nickel, or an alloy containing at least one of iron, cobalt, nickel, manganese or a compound containing at least one of iron, cobalt, nickel, manganese.

In one embodiment, the spin injection material layer may be magnesium oxide, aluminum oxide, tantalum oxide, or silicon dioxide.

In an embodiment, the layer of strong spin orbit coupling material may be a topological insulator, a semimetal, a complex oxide interface, an oxide/metal interface, or a heavy metal material.

The application also provides a method for realizing information access, which is applied to the magnetic rotation logic device with the stacked vertical structure, and the method comprises the following steps:

the input electrode receives a writing voltage carrying information to be written;

the information writing unit consisting of the multiferroic material layer and the magnetic material layer realizes the writing of information under the action of the writing voltage;

the information reading unit consisting of the spin injection material layer, the strong spin orbit coupling material layer and the magnetic material layer realizes the reading of information under the action of a working voltage;

the output electrode outputs the information read by the information reading unit.

In one embodiment, when the writing voltage is greater than the switching threshold of the multiferroic material layer, the ferroelectric sequence, the ferromagnetic sequence/the antiferromagnetic sequence of the multiferroic material layer are switched;

and the magnetization direction of the magnetic material layer is turned over along with the multiferroic material layer, so that the information to be written is written into the magnetic material layer.

In one embodiment, the operating voltage is applied between the magnetic material layer and the strong spin orbit coupling material layer;

under the action of the working voltage, generating a spin current carrying magnetization direction information of the magnetic material layer in the magnetic material layer;

the spin current is injected into the strong spin orbit coupling material layer through the spin injection material layer;

the strong spin orbit coupling material layer converts the spin current into a charge current with a voltage corresponding to the magnetization direction information;

the output electrode outputs the flow of electric charges.

In one embodiment, the output electrode may be connected to an input electrode of another vertically stacked magnetic rotation logic device.

In one embodiment, the method for implementing information access further includes:

the reading voltage output by the output electrode can be used as the writing voltage of the input electrode of another vertically-stacked magnetic rotation logic device connected with the output electrode.

The application also provides a method for manufacturing a vertically-structured stacked magnetic rotation logic device, which comprises the following steps:

sequentially preparing a bottom electrode layer, a multiferroic material layer, a magnetic material layer, a spin injection material layer and a strong spin orbit coupling material layer on a substrate;

processing the shapes of the bottom electrode layer and the material layers into at least one group of strip-shaped stacked structures, wherein the area of the bottom electrode layer in each group is larger than that of each material layer;

filling silicon dioxide to cover the substrate and the bottom electrode layer, wherein the top surface of the silicon dioxide is flush with the top surface of the strong spin orbit coupling material layer;

patterning each material layer, and etching silicon dioxide directly covering the bottom electrode layer to expose part of the bottom electrode layer;

an input electrode is disposed on the exposed bottom electrode layer, and an output electrode is disposed on the layer of strong spin-orbit coupling material.

According to the vertically stacked structure, a bottom hollow structure caused by a transverse bridging structure is eliminated, the micro-nano processing flow can be greatly simplified, the micro-nano processing cost is reduced, and the processing success rate of the magnetic rotation logic device is improved. The information writing unit and the information reading unit use magnetic materials at the same position, and do not need to be diffused to the whole magnetic material in a mode of domain wall displacement and magnetic domain growth, so that the reliability and the speed of the device can be greatly improved. Meanwhile, the information writing unit and the information reading unit are vertically arranged, so that the transverse area required by the device can be reduced, and the integration level of the device array is improved.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

FIG. 1 is a schematic diagram of a stacked vertically configured magnetic spin logic device.

Fig. 2 is a schematic diagram of a method for implementing information access according to the present application.

Fig. 3 to 7 are diagrams illustrating the effect of manufacturing a magnetic rotation logic device stacked in a vertical structure.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

As shown in fig. 1, the present invention provides a vertically stacked magnetic rotation logic device, comprising: an input electrode 1, an output electrode 2, a multiferroic material layer 3, a magnetic material layer 4, a spin injection material layer 5, and a strong spin orbit coupling material layer 6.

The connection relationship among the layers is as follows: the multiferroic material layer 3 is arranged between the input electrode 1 and the magnetic material layer 4, the spin injection material layer 5 is arranged between the magnetic material layer 4 and the strong spin orbit coupling material layer 6, and the strong spin orbit coupling material layer 6 is connected with the output electrode 2.

Wherein the multiferroic material layer 3 and the magnetic material layer 4 constitute an information writing unit, and the magnetic material layer 4, the spin injection material layer 5, and the strong spin orbit coupling material layer 6 constitute an information reading unit. The information writing unit and the information reading unit share the same magnetic material layer.

In one embodiment, the multiferroic material layer 3 includes, but is not limited to, bismuth ferrite (BiFeO)₃) Bismuth ferrite (BiFeO) doped with various elements (such as lanthanum element)₃) Terbium manganate (TbMnO)₃) Hexaferrite or hafnium oxide (HfO)_x) And the like.

In one embodiment, the magnetic material layer 4 includes, but is not limited to, iron (Fe), cobalt (Co), nickel (Ni), or an alloy containing at least one of iron, cobalt, nickel, manganese (Mn) (e.g., a cobalt iron (CoFe) alloy, a nickel iron (NiFe) alloy, a samarium cobalt (SmCo) alloy, etc.), or a compound containing at least one of iron, cobalt, nickel, manganese (e.g., cobalt iron boron (CoFeB), neodymium iron boron (NdFeB), perovskite rare earth manganese oxide), etc.

In one embodiment, the spin injection material layer 5 includes, but is not limited to, magnesium oxide (MgO), aluminum oxide (AlO)_x) Tantalum oxide (TaO)_x) Or silicon dioxide (SiO)₂) Etc. insulator material.

In one embodiment, the layer of strong spin-orbit coupling material 6 includes, but is not limited to, a topological insulator, a semimetal, a complex oxide interface, an oxide/metal interface, or a heavy metal material (e.g., platinum, tantalum, tungsten, etc.).

The spin injection material layer 5 is used for reducing the resistance mismatch between the magnetic material layer 4 and the strong spin orbit coupling material layer 6, so that the spin injection efficiency is improved, and the device performance is improved. Therefore, in another embodiment, the vertically stacked magnetic rotation logic device of the present application may include only the input electrode 1, the output electrode 2, the multiferroic material layer 3, the magnetic material layer 4, and the strong spin orbit coupling material layer 6, and does not include the spin injection material layer 5, which does not affect the function of the device. In practical applications, whether to dispose the spin injection material layer 5 may be selected according to requirements, and the application is not limited thereto.

The magnetic rotation logic device with the vertically stacked structure shown in fig. 1 has the vertically stacked structure of the material layers, so that a bottom hollow structure caused by a transverse bridging structure is eliminated, the micro-nano processing flow can be greatly simplified, the micro-nano processing cost is reduced, and the processing success rate of the magnetic rotation logic device is improved.

Meanwhile, as the information writing unit and the information reading unit use the magnetic materials at the same position, the magnetic materials do not need to be diffused to the whole magnetic materials in a mode of domain wall displacement and magnetic domain growth, and the reliability and the speed of the device can be greatly improved. And because the information writing unit and the information reading unit are vertically arranged, the lateral area required by the device can be reduced, and the integration level of the device array is improved.

The present application further provides a method for implementing information access, which is applied to the vertically stacked magnetic rotation logic device provided in the present application, and please refer to fig. 1 and fig. 2, the method includes the following steps:

in step S201, the input electrode 1 receives a write voltage carrying information to be written.

A write voltage, which carries the information to be written, can be generated by other circuits and transmitted to the input electrode 1.

In step S202, an information writing unit composed of the multiferroic material layer 3 and the magnetic material layer 4 writes information under the action of the writing voltage.

Specifically, writing of information is achieved by switching the magnetization directions in the multiferroic material layer 3 and the magnetic material layer 4. Therefore, writing of information can be achieved only when the value of the writing voltage is larger than the inversion threshold of the multiferroic material layer 3.

In step S203, an information reading unit composed of the spin injection material layer 5, the strong spin orbit coupling material layer 6, and the magnetic material layer 4 reads information under the action of a working voltage.

Wherein an operating voltage is applied between the magnetic material layer 4 and the strong spin orbit coupling material layer 6. Under the action of the operating voltage, a spin current carrying magnetization direction information of the magnetic material layer 4 is generated and injected into the strong spin orbit coupling material layer 6.

In step S204, the output electrode 2 outputs the information read by the information reading unit.

Specifically, the spin current carrying the magnetization direction information of the magnetic material layer 4 is output to an input electrode of another magnetic rotation logic device or an external circuit or device through the output electrode 2, and the external circuit or device can convert the magnetization direction information in the spin current into digital information.

In this embodiment, step S201 and step S202 implement writing of information, and step S203 and step S204 implement reading of information. Although steps S201-204 are listed in this embodiment, in practical applications, more or fewer steps may be included, for example, in one embodiment, only step S201 and step S202 are included, and in another embodiment, only step S203 and step S204 are included. Meanwhile, the execution sequence of the steps may also be adjusted according to actual needs, for example, step S203 and step S204 may be executed first, and then step S201 and step S202 may be executed. The present application is not limited thereto.

In one embodiment, in the process of writing information, when the writing voltage is greater than the switching threshold of the multiferroic material layer 3, the ferroelectric sequence, the ferromagnetic sequence/the antiferromagnetic sequence of the multiferroic material layer 3 are switched;

since the ferromagnetic order of the magnetic material layer 4 and the ferromagnetic order/antiferromagnetic order of the multiferroic material layer 3 are coupled together by exchange, the magnetization direction of the magnetic material layer 4 changes in accordance with the reversal of the ferromagnetic order, ferromagnetic order/antiferromagnetic order of the multiferroic material layer 3, so that the information to be written is written in the magnetic material layer 4. After information is written, i.e. stored in the form of a magnetization direction, in the magnetic material layer 4.

In one embodiment, during the information reading process, the operating voltage is applied between the magnetic material layer 4 and the strong spin orbit coupling material layer 6;

under the action of the working voltage, a spin current carrying magnetization direction information of the magnetic material layer 4 is generated in the magnetic material layer 4;

the spin current is injected into the strong spin orbit coupling material layer 6 through the spin injection material layer 5;

the strong spin orbit coupling material layer 6 converts spin current into charge current having a voltage corresponding to magnetization direction information to realize conversion of the magnetization direction into the charge voltage;

the output electrode 2 outputs the charge flow to an external circuit or equipment to read information.

In one embodiment, the output electrode may be connected to an input electrode of another vertically stacked magnetic rotation logic device.

The reading voltage output by the output electrode can be used as the writing voltage of the input electrode of another vertically-stacked magnetic rotation logic device connected with the output electrode.

The embodiment realizes the cascade connection of at least two magnetic rotation logic devices stacked in a vertical structure. In practical applications, the number of the magnetic rotation logic devices stacked in the cascaded vertical structure may be set according to needs, and the application is not limited thereto.

The application also provides a method for manufacturing a vertically-structured stacked magnetic rotation logic device, which comprises the following steps:

1) a bottom electrode layer 8, a multiferroic material layer 3, a magnetic material layer 4, a spin injection material layer 5 and a strong spin orbit coupling material layer 6 are sequentially prepared on a substrate 7.

Wherein, the substrate can be a silicon substrate; the materials of the multiferroic material layer, the magnetic material layer, the spin injection material layer, and the strong spin-orbit coupling material layer can be referred to the description of the foregoing embodiments, and are not repeated herein. In the step, the material layers can be sequentially prepared on the silicon substrate by using methods such as magnetron sputtering or atomic layer deposition. When the step is executed, the step needs to be in an ultrahigh vacuum environment so as to effectively guarantee the interface quality. Fig. 3 is a schematic diagram of the effect of this step.

2) And processing the shapes of the bottom electrode layer 8 and the material layers into at least one group of long strip stacking structures, wherein the area of the bottom electrode layer in each group is larger than that of each material layer.

Specifically, in this step, each material layer may be processed by photolithography and etching processes, and a schematic effect diagram after processing may be as shown in fig. 4. Two sets of elongated stacked structures are shown in fig. 4, each set being dimensioned to be machined as required. After the subsequent steps are finished, each group of strip-shaped stacking structures can form a magnetic rotation logic device with vertical structure stacking.

3) And filling silicon dioxide 9 to cover the substrate 7 and the bottom electrode layer 8, wherein the top surface of the silicon dioxide is flush with the top surface of the strong spin orbit coupling material layer 6.

Fig. 5 is a schematic diagram of the effect after filling silicon dioxide. As can be seen from fig. 5, the silicon dioxide completely covers the entire substrate and the bottom electrode layer, and completely encapsulates the remaining material layers. The top surface of the silicon dioxide is flush with the top surface of the layer of strong spin-orbit coupling material located uppermost.

4) And patterning the material layers, and etching the silicon dioxide directly covering the bottom electrode layer to expose part of the bottom electrode layer.

Specifically, in this step, the material layers may be processed by photolithography, etching and opening processes, and portions of the spin orbit coupling material layer and the spin injection material layer may be sequentially removed to expose the magnetic material layer under the spin injection material layer. At the same time, a portion of the silicon dioxide layer is removed, leaving the bottom electrode layer and the substrate portion covered thereby exposed. The effect of this step is schematically shown in fig. 6.

5) An input electrode 1 is disposed on the exposed bottom electrode layer, and an output electrode 2 is disposed on the layer of strong spin-orbit coupling material.

To this end, the fabrication of the magnetic rotation logic device with the vertical stack structure is completed, and a schematic diagram of the final effect can be seen in fig. 7. When there are at least two magnetic rotation logic devices stacked in a vertical structure, the output electrode of the magnetic rotation logic device stacked in a vertical structure can be connected with the input electrode of the magnetic rotation logic device stacked in another vertical structure, so that the output voltage of the magnetic rotation logic device stacked in the previous vertical structure can be directly used as the write-in voltage of the magnetic rotation logic device stacked in the next vertical structure, and the cascade connection of the magnetic rotation logic devices stacked in the vertical structure can be realized.

In practical applications, the cascade connection of more magnetic rotation logic devices stacked in a vertical structure can be realized according to the method described above, and the application is not limited to this.

All the embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments, and the relevant points may be referred to the part of the description of the method embodiment. Although embodiments of the present description provide method steps as described in embodiments or flowcharts, more or fewer steps may be included based on conventional or non-inventive means. The order of steps recited in the embodiments is merely one manner of performing the steps in a multitude of orders and does not represent the only order of execution.

Those of skill in the art will understand that reference throughout the specification to the terms "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the embodiments of the specification.

In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction. The above description is only an example of the embodiments of the present disclosure, and is not intended to limit the embodiments of the present disclosure. Various modifications and variations to the embodiments described herein will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the embodiments of the present specification should be included in the scope of the claims of the embodiments of the present specification.