阅读说明：本技术 倒装发光二极管芯片及其制作方法 (Flip light-emitting diode chip and manufacturing method thereof ) 是由 兰叶 黄磊 张威 吴志浩 李鹏 于 2020-03-27 设计创作，主要内容包括：本公开提供了一种倒装发光二极管芯片及其制作方法,属于半导体技术领域。芯片包括衬底、N型半导体层、有源层、P型半导体层、透明导电层、透明绝缘层、反射电极、连接电极和DBR层；N型半导体层、有源层和P型半导体层依次层叠在衬底上,P型半导体层上设有凹槽和隔离槽；透明导电层和透明绝缘层依次层叠在P型半导体层上,透明绝缘层内设有多个通孔；反射电极设置在多个通孔内与透明导电层接触,并铺设在透明绝缘层上；连接电极设置在N型半导体层上；DBR层铺设在凹槽和隔离槽的各个表面上；多个通孔包括多排第一通孔,同一排的第一通孔与凹槽的距离相同；在远离凹槽的方向上,各排的第一通孔的横截面面积之和逐渐增大,发光亮度提高。(The disclosure provides a flip light-emitting diode chip and a manufacturing method thereof, and belongs to the technical field of semiconductors. The chip comprises a substrate, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, a transparent conducting layer, a transparent insulating layer, a reflecting electrode, a connecting electrode and a DBR layer; the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate, and the P-type semiconductor layer is provided with a groove and an isolation groove; the transparent conducting layer and the transparent insulating layer are sequentially laminated on the P-type semiconductor layer, and a plurality of through holes are formed in the transparent insulating layer; the reflecting electrodes are arranged in the through holes, are in contact with the transparent conducting layer and are laid on the transparent insulating layer; the connecting electrode is arranged on the N-type semiconductor layer; DBR layers are laid on the surfaces of the grooves and the isolation grooves; the plurality of through holes comprise a plurality of rows of first through holes, and the distances between the first through holes in the same row and the grooves are the same; in the direction far away from the groove, the sum of the cross section areas of the first through holes in each row is gradually increased, and the light-emitting brightness is improved.)

1. A flip light emitting diode chip, characterized in that it comprises a substrate (10), an N-type semiconductor layer (21), an active layer (22), a P-type semiconductor layer (23), a transparent conductive layer (31), a transparent insulating layer (32), a reflective electrode (41), a connecting electrode (42) and a distributed Bragg reflection layer (51);

the N-type semiconductor layer (21), the active layer (22) and the P-type semiconductor layer (23) are sequentially laminated on the substrate (10), and a groove (100) extending to the N-type semiconductor layer (21) and an isolation groove (200) extending to the substrate (10) are formed in the P-type semiconductor layer (23); the transparent conducting layer (31) and the transparent insulating layer (32) are sequentially laminated on the P-type semiconductor layer (23), and a plurality of through holes (300) extending to the transparent conducting layer (31) are formed in the transparent insulating layer (32); the reflective electrodes (41) are arranged in the through holes (300) to be in contact with the transparent conductive layer (31) and laid on the transparent insulating layer (32); the connecting electrode (42) is arranged on the N-type semiconductor layer (21) in the groove (100); the distributed Bragg reflection layer (51) is laid on each surface of the groove (100) and the isolation groove (200);

the through holes (300) comprise a plurality of rows of first through holes (310), and the first through holes (310) in the same row are at the same distance from the groove (100); in the direction far away from the groove (100), the sum of the cross-sectional areas of the first through holes (310) of each row is gradually increased, and the cross section of the first through hole (310) is a section of the first through hole (310) perpendicular to the extending direction of the first through hole (310).

2. The flip-chip light emitting diode chip as claimed in claim 1, wherein, in two adjacent rows of the first through holes (310), the sum of the cross-sectional areas of the rows of the first through holes (310) far away from the recess (100) is 120% to 140% of the sum of the cross-sectional areas of the rows of the first through holes (310) near the recess (100).

3. The flip-chip light emitting diode chip as claimed in claim 1 or 2, wherein the rows of first through-holes (310) satisfy at least one of the following conditions:

the cross-sectional area of each first through hole (310) is gradually increased in a direction away from the groove (100);

the number of the first through holes (310) of each row is gradually increased in a direction away from the groove (100).

4. The flip-chip light emitting diode chip as claimed in claim 1 or 2, wherein the cross section of the transparent insulating layer (32) is polygonal, and the cross section of the transparent insulating layer (32) is a section of the transparent insulating layer (32) perpendicular to the extending direction of the through hole (300); the plurality of vias (300) further comprises a plurality of second vias (320), the plurality of second vias (320) being located at different corners of the polygon.

5. The flip-chip light emitting diode chip of claim 4, wherein the cross section of the second through hole (320) is a sector ring shape, a center of the sector ring shape and a corner of the polygon corresponding to the second through hole (320) are located on two sides of the sector ring shape, and the cross section of the second through hole (320) is a cross section of the second through hole (320) perpendicular to an extending direction of the second through hole (320).

6. The flip-chip light emitting diode chip as claimed in claim 1 or 2, further comprising a transparent adhesive layer (33), the material of the transparent adhesive layer (33) being alumina, the transparent adhesive layer (33) being sandwiched between the transparent insulating layer (32) and the reflective electrode (41).

7. The flip-chip light emitting diode chip as claimed in claim 6, characterized in that the thickness of the transparent adhesive layer (33) is less than 100 angstroms.

8. The flip-chip light emitting diode chip as claimed in claim 1 or 2, wherein the reflective electrode (41) comprises a reflective layer (411) and a barrier layer (412) which are sequentially stacked, the reflective layer (411) is a silver layer, and the barrier layer (412) comprises nickel layers (412a) and platinum layers (412b) which are alternately stacked.

9. A manufacturing method of a flip light-emitting diode chip is characterized by comprising the following steps:

sequentially growing an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate;

forming a groove extending to the N-type semiconductor layer and an isolation groove extending to the substrate on the P-type semiconductor layer;

sequentially forming a transparent conducting layer and a transparent insulating layer on the P-type semiconductor layer;

forming a through hole extending to the transparent conductive layer in the transparent insulating layer; the through holes comprise a plurality of rows of first through holes, and the distances between the first through holes in the same row and the grooves are the same; in the direction far away from the groove, the sum of the cross section areas of the first through holes in each row is gradually increased, and the cross section of each first through hole is a section of the first through hole perpendicular to the extending direction of the first through hole;

forming a reflective electrode in the through hole and on the transparent insulating layer, the reflective electrode being in contact with the transparent conductive layer in the through hole;

forming a connecting electrode on the N-type semiconductor layer in the groove;

forming a distributed Bragg reflection layer on each surface of the groove and the isolation groove.

10. The method of manufacturing of claim 9, further comprising:

and before a through hole extending to the transparent conducting layer is formed in the transparent insulating layer, a transparent adhesive layer is formed on the transparent insulating layer, and the transparent adhesive layer is made of aluminum oxide.