阅读说明：本技术 一种存储数据的读取方法及装置 (Method and device for reading stored data ) 是由 苏如伟 韩旭 于 2018-08-17 设计创作，主要内容包括：本发明实施例公开了一种存储数据的读取方法及装置,该方法通过采用至少两个不同的读取参考电信号,读取存储器中的存储数据；在不同的参考电压对同一存储数据进行读取的结果相同时,判断出该存储数据为可靠数据；而在不同的参考电信号对同一存储数据进行读取的结果不相同时,判断出该存储数据为存疑数据。本发明实施例提供的存储数据的读取方法及装置,能够通过采用至少两个不同的参考电信号对存储数据进行读取,并判断所读取存储数据的可靠性,从而能够采用简单的存储数据读取方法,使得存储器中存储数据的读取结果更加准确。(The embodiment of the invention discloses a method and a device for reading stored data, wherein the method comprises the steps of reading the stored data in a memory by adopting at least two different reading reference electric signals; when the reading results of different reference voltages on the same storage data are the same, judging that the storage data are reliable data; and when the reading results of different reference electric signals on the same storage data are different, judging the storage data as the doubt data. According to the method and the device for reading the stored data, the stored data can be read by adopting at least two different reference electric signals, and the reliability of the read stored data is judged, so that a simple method for reading the stored data can be adopted, and the reading result of the stored data in the memory is more accurate.)

1. A method for reading stored data, comprising:

acquiring at least two different read reference electrical signals;

reading the stored data in the memory by the at least two different read reference electrical signals respectively;

judging whether the reading results of reading the same stored data in the memory through the at least two different reading reference electric signals are the same or not; if so, the read storage data in the memory is reliable data; and otherwise, the read storage data in the memory is the in-doubt data.

2. The method of claim 1, further comprising, prior to acquiring at least two different read reference electrical signals:

and setting corresponding check bits for the storage data groups in the memory.

3. The method of claim 2, further comprising:

acquiring a check bit corresponding to the storage data group;

and checking the storage data group comprising the in-doubt data according to the check bit.

4. The method of claim 3, wherein verifying the set of stored data including the in-doubt data based on the check bits comprises:

if the stored data group including the in-doubt data is successfully verified according to the check bit, the in-doubt data is reliable data; alternatively, the first and second electrodes may be,

and if the verification of the storage data group comprising the in-doubt data fails by adopting the check bit, the in-doubt data is inverted and is used as the read data of the in-doubt data.

5. The method of claim 3, wherein the check bits comprise parity bits.

6. The method according to any one of claims 1 to 5, wherein the reference electrical signal is a voltage signal or a current signal.

7. A reading apparatus for storing data, comprising:

a reference electrical signal acquisition module for acquiring at least two different read reference electrical signals;

the storage data reading module is used for reading the storage data in the memory through the at least two different reading reference electric signals respectively;

the reading result judging module is used for judging whether the reading results of reading the same storage data in the memory through the at least two different reading reference electric signals are the same or not; if so, the read storage data in the memory is reliable data; and otherwise, the read storage data in the memory is the in-doubt data.

8. The apparatus of claim 7, further comprising:

and the check bit setting module is used for setting corresponding check bits for the storage data group in the memory before acquiring at least two different reading reference electric signals.

9. The apparatus of claim 8, further comprising:

the check bit acquisition module is used for acquiring the check bits corresponding to the storage data groups;

and the in-doubt data checking module is used for checking the storage data group comprising the in-doubt data according to the check bit.

10. The apparatus of claim 9, wherein the in-doubt data checking module is specifically configured to:

if the stored data group including the in-doubt data is successfully verified according to the check bit, the in-doubt data is reliable data; alternatively, the first and second electrodes may be,

and if the verification of the storage data group comprising the in-doubt data fails according to the check bit, the in-doubt data is inverted and used as the read data of the in-doubt data.

11. The apparatus of claim 8, wherein the check bits comprise parity bits.

12. The device according to any one of claims 7 to 11, wherein the reference electrical signal is a voltage signal or a current signal.

Technical Field

The embodiment of the invention relates to the technical field of stored data processing, in particular to a method and a device for reading stored data.

Background

The memory comprises a plurality of memory units, and the memory units have functions of storing data and reading and writing data. In general, stored data in a memory cell of a memory is not direct binary data "0" or "1", but is an electrical signal related to data stored in the memory cell. In reading data stored in the memory cell, the electrical signal stored in the memory cell is compared with a reference electrical signal, and the comparison result is converted into binary data "0" or "1".

Because the electrical difference of the electrical signals in the memory cell is small, a sense amplifier is needed to read the weak electrical difference in the memory cell and then convert the weak electrical difference into binary data "0" or "1". However, in practical memory applications, the sense amplifier may be affected by temperature, voltage, etc., and the electrical signals stored in the memory cell may also be affected by temperature, data retention, cosmic rays, etc., which may make the data read from the memory cell unreliable. In order to improve the reliability of data read from the storage unit of the memory, the read data can be verified in a parity check mode, and if the verification is passed, the read data is reliable; if the verification fails, the read data is unreliable. As can be seen, parity checks can only determine whether the read data is reliable. Therefore, in the prior art, an Error Correction Code (ECC) technique is adopted, and a hamming Code is inserted into original storage data of a memory cell, that is, a corresponding check bit is set in the memory cell, so as to detect and correct a single-bit Error in the memory cell.

However, in the ECC error correction and detection method, when the storage data is small, the storage space occupied by the hamming code is large relative to the parity check, and the parity check cannot detect the position of a single bit error. When the stored data is more, the logical reasoning of the ECC error correction and detection mode is difficult, so that the time delay of reading the data is large. Therefore, the prior art does not have a high-reliability and simple and feasible storage data reading method.

Disclosure of Invention

In view of this, embodiments of the present invention provide a method and an apparatus for reading stored data, so that the read data has high reliability, and the reading method is simple and easy to implement, and does not occupy a large memory space of a memory.

In a first aspect, an embodiment of the present invention provides a method for reading stored data, including:

acquiring at least two different read reference electrical signals;

reading the stored data in the memory by the at least two different read reference electrical signals respectively;

judging whether the reading results of reading the same stored data in the memory through the at least two different reading reference electric signals are the same or not; if so, the read storage data in the memory is reliable data; and otherwise, the read storage data in the memory is the in-doubt data.

Optionally, before acquiring at least two different read reference electrical signals, the method further includes:

and setting corresponding check bits for the storage data groups in the memory.

Optionally, the method further includes:

acquiring a check bit corresponding to the storage data group;

and checking the storage data group comprising the in-doubt data according to the check bit.

Optionally, the verifying the storage data group including the in-doubt data according to the check bit includes:

if the stored data group including the in-doubt data is successfully verified according to the check bit, the in-doubt data is reliable data; alternatively, the first and second electrodes may be,

and if the verification of the storage data group comprising the in-doubt data fails by adopting the check bit, the in-doubt data is inverted and is used as the read data of the in-doubt data.

Optionally, the check bits comprise parity bits.

Optionally, the reference electrical signal is a voltage signal or a current signal.

In a second aspect, an embodiment of the present invention further provides a reading apparatus for stored data, including:

a reference electrical signal acquisition module for acquiring at least two different read reference electrical signals;

the storage data reading module is used for reading the storage data in the memory through the at least two different reading reference electric signals respectively;

the reading result judging module is used for judging whether the reading results of reading the same storage data in the memory through the at least two different reading reference electric signals are the same or not; if so, the read storage data in the memory is reliable data; and otherwise, the read storage data in the memory is the in-doubt data.

Optionally, the apparatus further comprises:

and the check bit setting module is used for setting corresponding check bits for the storage data group in the memory before acquiring at least two different reading reference electric signals.

Optionally, the apparatus further comprises:

the check bit acquisition module is used for acquiring the check bits corresponding to the storage data groups;

and the in-doubt data checking module is used for checking the storage data group comprising the in-doubt data according to the check bit.

Optionally, the in-doubt data checking module is specifically configured to:

if the stored data group including the in-doubt data is successfully verified according to the check bit, the in-doubt data is reliable data; alternatively, the first and second electrodes may be,

and if the verification of the storage data group comprising the in-doubt data fails according to the check bit, the in-doubt data is inverted and used as the read data of the in-doubt data.

Optionally, the check bits comprise parity bits.

Optionally, the reference electrical signal is a voltage signal or a current signal.

The embodiment of the invention provides a method and a device for reading stored data, wherein the method adopts at least two different reading reference electric signals to read the stored data in a memory; when the reading results of different reference voltages on the same storage data are the same, judging that the storage data are reliable data; and when the reading results of different reference electric signals on the same storage data are different, judging the storage data as the doubt data. Compared with the existing method for reading the stored data by adopting one reference electric signal, the method can read the stored data by adopting at least two different reference electric signals and judge the reliability of the read stored data, thereby adopting a simple stored data reading method and ensuring that the result of reading the stored data in the memory is more accurate.

Drawings

Fig. 1 is a flowchart of a method for reading stored data according to an embodiment of the present invention;

fig. 2 is a flowchart of a method for reading stored data according to a second embodiment of the present invention;

fig. 3 is a schematic structural diagram of a reading apparatus for storing data according to a third embodiment of the present invention;

fig. 4 is a schematic structural diagram of a reading apparatus for storing data according to a fourth embodiment of the present invention.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures. The embodiments of the invention and the features of the embodiments can be combined with each other without conflict.