Semiconductor light-emitting element
阅读说明:本技术 一种半导体发光元件 (Semiconductor light-emitting element ) 是由 贾月华 柯韦帆 王笃祥 于 2019-09-25 设计创作,主要内容包括:一种半导体发光元件,其包括半导体发光序列,半导体发光序列包括第一导电类型半导体层、发光层和第二导电类型半导体层,第二导电类型半导体层一侧为出光面,其特征在于:出光面上包括多个独立凹槽,凹槽的底部位于第二导电类型半导体层中,凹槽之外的出光面的区域为光透射阻挡区域,所述的凹槽的侧壁相对于半导体发光序列的厚度方向倾斜的。(A semiconductor light-emitting element comprises a semiconductor light-emitting sequence, wherein the semiconductor light-emitting sequence comprises a first conduction type semiconductor layer, a light-emitting layer and a second conduction type semiconductor layer, and one side of the second conduction type semiconductor layer is a light-emitting surface.)
1. A semiconductor light-emitting element comprises a semiconductor light-emitting sequence, wherein the semiconductor light-emitting sequence comprises a first conduction type semiconductor layer, a light-emitting layer and a second conduction type semiconductor layer, and one side of the second conduction type semiconductor layer is a light-emitting surface.
2. The light-emitting element according to claim 1, wherein: the groove is a plurality of independent areas.
3. A light-emitting element according to claim 1, wherein the depth of the groove is 2 ~ 4 μm.
4. A light-emitting element according to claim 1, wherein the ratio of the horizontal area of the groove to the horizontal area of the light-emitting surface is 5 ~ 95%.
5. The light-emitting element according to claim 1, wherein: the width of the top opening of the groove is larger than or equal to the depth of the groove.
6. The light-emitting element according to claim 1, wherein the non-groove regions between adjacent grooves have a width W2, W1+ W2 is between 8 ~ 15 μm.
7. The semiconductor light-emitting element according to claim 1, wherein: the inner side wall of the groove deviates from the thickness stacking direction of the semiconductor light-emitting sequence by an angle defined as an inclination (alpha), and the inclination is smaller than 90 degrees.
8. The semiconductor light emitting element as claimed in claim 7, wherein the inclination (α) of the inner wall of the groove is 30 ~ 70 °.
9. The semiconductor light-emitting element according to claim 7, wherein: the depth of the groove is greater than or equal to the thickness from the bottom of the groove to the light-emitting layer.
10. The semiconductor light-emitting element according to claim 1, wherein: and at least routing electrodes and/or electrode expansion strips are arranged in the light blocking area on the light emergent surface side.
11. The semiconductor light-emitting element according to claim 1, wherein: the light transmission blocking area is a light reflection layer covering area or a light absorption layer covering area.
12. The semiconductor light-emitting element according to claim 1, wherein: the groove is one of a conical table groove, a pointed conical groove or an arc-shaped groove.
13. The semiconductor light-emitting element according to claim 1, wherein: a light transmissive barrier is included around the sidewalls of the semiconductor light emitting sequence.
14. The semiconductor light-emitting element according to claim 1, wherein: the light transmission blocking area is an electrode layer covering area.
15. The semiconductor light-emitting element according to claim 1, wherein: the light emitting area of the light emitting surface is only concentrated in the groove.
16. The semiconductor light-emitting element according to claim 1, wherein: the light transmission blocking area on the light emitting surface comprises an electrode covering area and an additional light transmission blocking layer covering area, and the electrode and the additional light transmission blocking layer are electrically insulated.
17. The semiconductor light-emitting element according to claim 16, wherein: the additional light transmission barrier layer is a metal or insulating dielectric layer.
18. The semiconductor light-emitting element according to claim 13, wherein: when the light transmission barrier layer covered around the side wall of the semiconductor light-emitting sequence is a metal layer, a current barrier layer is arranged between the metal layer and the side wall of the semiconductor light-emitting sequence.
Technical Field
The present invention relates to a light emitting device, and more particularly, to a semiconductor light emitting device with concentrated light emitting directions.
Background
Semiconductor light emitting elements are widely used as solid state light emitting elements and widely applied to the fields of illumination, display, communication, electric appliances and the like.
In some application requirements, it is necessary to limit the light emitting direction to be consistent and concentrated, for example, a laser diode-like design needs a small light spot. However, in the current laser diode, the light emitting direction is usually concentrated on a local region on one surface side of the semiconductor light emitting epitaxial stack, and the surface side is usually roughened to increase the light emitting efficiency, but the surface pattern obtained after roughening treatment is irregular, which causes disorder of the light emitting direction, non-concentrated light emitting angle, and insufficient light emitting intensity.
Disclosure of Invention
The semiconductor light-emitting element is characterized in that the light-emitting surface comprises a plurality of grooves, the bottoms of the grooves are positioned in the second conduction type semiconductor layer, the area of the light-emitting surface outside the grooves is a light transmission blocking area, the grooves are in a regular pattern, and the side walls of the grooves are inclined relative to the thickness stacking direction of the semiconductor light-emitting sequence.
Preferably, the grooves are a plurality of separate areas.
Preferably, the depth of the grooves is 2 ~ 4 microns.
Preferably, the horizontal area of the groove accounts for 5 ~ 95% of the horizontal area of the light-emitting surface.
Preferably, the width of the top opening of the groove is greater than or equal to the depth of the groove.
Preferably, the width of the non-groove region between adjacent grooves is W2, and W1+ W2 is between 8 ~ 15 microns.
Preferably, the angle of the inner sidewall main region of the recess deviating from the thickness stacking direction of the light emitting semiconductor sequence is defined as an inclination (α) which is less than 90 °.
Preferably, the inclination (α) of said grooves is 30 ~ 70 °.
Preferably, the light blocking area on the light emergent surface side is at least provided with routing electrodes and/or electrode expansion strips.
Preferably, the light transmission blocking area is a light reflection layer covering area or a light absorption layer covering area.
Preferably, the main area of the inner side wall of the groove comprises a plurality of microstructures, and the size of each microstructure is less than or equal to 1 micron.
Preferably, the regular pattern is an inverted cone-shaped platform, an inverted pointed cone-shaped or an arc-shaped.
Preferably, a light-transmitting barrier is included around a major region of the outer sidewall of the semiconductor light emitting sequence.
Preferably, the light transmission blocking region is an electrode layer covering region.
Preferably, the light emitting area of the light emitting surface is only concentrated in the groove.
Preferably, the light transmission blocking area on the light emitting surface includes an electrode covering area and an additional light transmission blocking layer covering area, and the electrode and the additional light transmission blocking layer are electrically insulated.
Preferably, the light transmission barrier layer is a metal or insulating medium layer.
Preferably, when the light transmission blocking layer covering the main region of the sidewall of the semiconductor light emitting sequence is a metal layer, a current blocking layer is arranged between the metal layer and the main region of the inner sidewall of the semiconductor light emitting sequence.
Through the design, the invention can obtain the following beneficial effects:
the light emitting surface is designed into a groove with inclined side walls, the light emitting direction is more inclined to the direction vertical to the horizontal surface of the semiconductor light emitting sequence to be concentrated, the technical effect of concentrating the light emitting angle is achieved, the application requirement of a point light source is met, the light emitting area is not required to be limited in the local area of the light emitting surface, and the light intensity can be increased.
Drawings
Fig. 1 is a schematic cross-sectional view of a light-emitting device according to the present invention along a stacking direction of semiconductor light-emitting sequences according to an embodiment.
Fig. 2 is a partially enlarged view of the oval area of the light emitting element shown in fig. 1.
Fig. 3 is a schematic plan view of a light emitting surface of a light emitting element according to an embodiment of the invention.
Fig. 4 is a schematic cross-sectional view along the stacking direction of the semiconductor light emitting sequence at the position of the dotted line in fig. 3.
Fig. 5 is a schematic plan view of a light emitting surface of another light emitting device according to the present invention in an embodiment.
Fig. 6 and 7 are schematic cross-sectional views of the semiconductor light emitting sequence in fig. 5 taken along the stacking direction of the semiconductor light emitting sequence at the positions of the dotted line in the X direction and the dotted line in the Y direction, respectively.
Fig. 8 is a schematic cross-sectional view of a light emitting device of the present invention along the stacking direction of semiconductor light emitting sequences according to the embodiment mentioned in the embodiment, wherein the main area of the inner sidewall of the light emitting device is covered by a light transmission blocking layer.
Fig. 9 is a schematic sectional view of a light-emitting element of the present invention mentioned in the embodiment, the light-emitting element including a reflective layer, a bonding layer, a permanent support substrate, and a first electrode on a non-light-exit surface side, along a stacking direction of a semiconductor light-emitting sequence.
Description of reference numerals:
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention.
In the following embodiments of the present invention, words indicating orientations, such as "upper", "lower", "left", "right", "horizontal", "peripheral", etc., are referred to only for the purpose of better understanding of the present invention by those skilled in the art, and should not be construed as limiting the present invention.
The conventional light-emitting element at least comprises a semiconductor light-emitting sequence, wherein the semiconductor light-emitting sequence comprises a first type semiconductor layer, a second type semiconductor layer and a light-emitting layer, and the light-emitting layer is positioned between the first type semiconductor layer and the second type semiconductor layer, the first type semiconductor layer and the second type semiconductor layer provide electrons and holes, and the electrons and the holes are compounded in the light-emitting layer under the drive of current to emit light.
Therefore, the present embodiment makes the following improvements on the basis of the conventional structure, and the technical effects of deflecting the light emitting direction to the direction perpendicular to the horizontal light emitting surface of the semiconductor light emitting sequence and concentrating the light emitting angle are achieved by the ordered grooves designed on the light emitting surface, so as to meet the requirement of concentrating the light beam direction of the point light source, and the light emitting area does not need to be limited in the local area of the light emitting surface, so that the light intensity can be increased.
As shown in fig. 1 ~ 2, the present embodiment provides a light emitting device 100 comprising a semiconductor light emitting sequence including a first
The material of the semiconductor light emitting sequence comprises a group III-V semiconductor material, such as AlxInyGa (1-x-y) N or AlxInyGa (1-x-y) P or AlxGa1-xAs, wherein 0 ≦ x, y ≦ 1; (x + y) is less than or equal to 1. Depending on the material of the light-emitting
In this embodiment, the red light epitaxy between 610 ~ 650nm is taken as an example, wherein the first
As shown in fig. 3, based on a normal parallel to the thickness direction of the semiconductor light emitting sequence, the inner sidewall of the
The grooves may be formed by the following process: a mask pattern is formed on the surface of the second conductive type semiconductor layer by a photoresist patterning process, and then the exposed surface of the mask pattern of the second conductive
The bottom of the
The depth D1 of the
The width W1 of the top opening of the
The non-groove regions between the
The region outside the
Preferably, the light
The light-
As an embodiment, as shown in fig. 3 ~ 4, the light
The
Or as an alternative embodiment, as shown in fig. 5 ~ 7, the light transmission blocking region is divided into two regions, namely an electrode layer covering region and a non-electrode layer covering region, to form regions with different functions, and the non-electrode layer covering region and the electrode layer covering region are electrically insulated from each other, the electrode layer covering region includes at least one
The width of the current spreading bar is preferably between 1 ~ 3 microns the shape of the current spreading bar can be circular, linear such as curved or straight or a combination of circular and linear.
The electrode layer, the wire bonding electrode and the current spreading bar have at least the light transmission blocking effect on the light radiated by the light emitting layer, and can have a light absorbing layer, or more preferably, the bottom layer of the electrode layer, the wire bonding electrode or the current spreading bar is a light reflecting layer. The electrode layer, the routing electrode and the current spreading strip are preferably formed by combining a plurality of layers of metals or alloys, and the metals comprise at least one of the following metals: copper, aluminum, gold, lanthanum, or silver; the metal alloy comprises at least one of: germanium gold, beryllium gold, chromium gold, silver titanium, copper tin, copper zinc, copper cadmium, tin lead antimony, tin lead zinc, nickel tin, or nickel cobalt.
As shown in FIG. 5 ~ 7, the covering material of the non-electrode layer covering region is different from the electrode layer covering region, and the covering material of the non-electrode layer covering region is mainly used for light transmission blocking, and preferably has a stronger light transmission blocking function than the electrode covering region, i.e. includes at least one additional light
Since the non-electrode layer covered region is electrically insulated from the electrode layer covered region, the additional light
As an embodiment, as shown in fig. 9, the sidewalls of the semiconductor light emitting sequence are also designed as light transmission blocking regions, that is, a light
The material of the light
As shown in fig. 9, when the light-transmitting
As shown in fig. 9, the semiconductor light emitting sequence has a first electrode 111 electrically connected to the first conductive
The first electrode 111 is led out from the non-light-emitting side of the semiconductor light-emitting sequence, and the non-light-emitting side can have a permanent supporting substrate 110, which is a conductive substrate, such as a silicon, metal-based substrate, such as a copper-tungsten substrate or a gallium arsenide-based substrate. The permanent support substrate 110 may be a growth substrate for a semiconductor light emitting sequence, or the semiconductor light emitting sequence may be transferred onto the permanent support substrate 110 through the bonding layer 109 after the semiconductor light emitting sequence is obtained on the growth substrate. The first electrode 111 is located on the back side of the permanent support substrate 110, and the first electrode 111 includes, but is not limited to, a metal layer such as gold, gold tin, etc.
The bonding layer 109 and the first conductivity
The light-emitting element can be used as a similar laser diode and is widely applied to the fields of sensors and communication.
While the drawings and description above correspond to particular embodiments, respectively, it should be understood that elements, embodiments, design criteria and technical principles described or disclosed in the various embodiments may be arbitrarily referenced, exchanged, matched, coordinated or combined as required, unless they conflict or conflict with each other or are difficult to implement together.
Although the invention has been described with reference to specific embodiments, it is not intended to limit the scope, sequence, or use of the materials or methods. Various modifications and alterations of this invention can be made without departing from the spirit and scope of this invention.
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