阅读说明：本技术 具纳米环的微发光二极管量子点基板结构以及制作方法 (Micro light-emitting diode quantum dot substrate structure with nanorings and manufacturing method thereof ) 是由 郭浩中 佘庆威 朱国雄 宋琦丽 刘召军 张祐维 周嘉柔 张秋莹 于 2019-08-22 设计创作，主要内容包括：本发明公开了具纳米环的微发光二极管量子点基板的结构,其是包括了一基板、形成在该基板一侧表面上形成有一层的绿光发光二极管层、在所述的蓝光发光二极管层的表面上形成有复数个具几何形状的中空装置、于一部份的中空装置中设有红色的量子点,剩余的部份则维持着空置的中空装置,以及一层仅覆盖在有红色量子点的中空装置上的分布式布拉格反射层。(The invention discloses a structure of a micro light-emitting diode quantum dot substrate with a nanoring, which comprises a substrate, a green light-emitting diode layer formed on the surface of one side of the substrate, a plurality of hollow devices with geometric shapes formed on the surface of the blue light-emitting diode layer, red quantum dots arranged in one part of the hollow devices, a hollow device with a vacant part maintained in the rest part, and a distributed Bragg reflection layer only covering the hollow device with the red quantum dots.)

1. A structure of micro-LED quantum dot substrate with nanoring is characterized in that the structure comprises:

a substrate;

A green light emitting diode layer formed on one side surface of the substrate;

A plurality of hollow devices with geometrical shapes, which are formed on the surface of the green light LED layer;

A plurality of red quantum dots disposed in a portion of the hollow device; and

A distributed Bragg reflector layer covers only the hollow device with the red quantum dots.

2. the structure of a nanoring-containing micro-led quantum dot substrate as claimed in claim 1, wherein the hollow device has a ring shape.

3. The structure of a nanoring-containing micro-led quantum dot substrate as claimed in claim 1, wherein the hollow device has a rectangular shape.

4. The structure of a nanoring-containing micro-led quantum dot substrate as claimed in claim 1, wherein the hollow device has a triangular shape.

5. A manufacturing method of a micro light emitting diode quantum dot substrate with a nanoring is characterized by comprising the following steps:

Preparing a substrate;

Forming a green light emitting diode layer on one side of the substrate;

forming a plurality of hollow devices on the green light emitting diode layer;

spraying red quantum dots in a part of the hollow device; and

The red quantum dots are coated with a distributed Bragg reflection layer.

6. the method as claimed in claim 5, wherein each of the hollow devices has a ring shape.

7. The method as claimed in claim 5, wherein each of the hollow devices has a rectangular shape.

8. the method as claimed in claim 5, wherein each of the hollow devices has a triangular shape.

9. The method as claimed in claim 5, wherein the red quantum dots and the empty hollow device are selectively adjacent to each other.

Technical Field

The invention mainly provides a substrate, in particular to a structure and a manufacturing method of a micro light-emitting diode quantum dot substrate, and particularly relates to a structure and a manufacturing method of a micro light-emitting diode quantum dot substrate with a nanoring; mainly adds the structure of the nanometer ring on the basis of the micro light-emitting diode; not only can effectively solve the problem of positioning when transferring a large amount, but also can avoid the mutual interference when each pixel emits light when each pixel with various colors is carried on the substrate.

Background

the composition of sapphire is alumina (A1)₂O₃) Three oxygen atoms and two aluminum atoms are combined in a covalent bond mode, the crystal structure is a hexagonal lattice structure, the optical penetration band of the sapphire is very wide, and the optical transmission band is formed by combining near ultraviolet light (190 nanometers; nm) to the middle infrared ray, and has the characteristics of high sound velocity, high temperature resistance, corrosion resistance, high hardness, high melting point (20452 ℃) and the like, so the material is often used as a substrate material of a photoelectric component.

The quality of the ultra-high brightness white/blue LED depends on the material quality of gallium nitride epitaxy (GaN), so that the lattice constant mismatch between the C surface of sapphire (single crystal A12O3) and III-V and II-VI deposition films is small, and the requirement of high temperature resistance of a GaN epitaxy process is met, so that the sapphire substrate becomes a key material for manufacturing a QLED display screen, and the processing quality of the surface of the sapphire substrate is related to the processing quality of the sapphire substrate.

QLED is a short hand for "Quantum Dot Light Emitting Diode", i.e. Quantum Dot Light Emitting Diode, and can also be used in the Quantum display technology. This is a new technology between liquid crystal and OLED, and the core technology is QuantumDots. Quantum dots are extremely small semiconductor nanocrystals invisible to the naked eye, and are particles with a particle size of less than 10 nm. In the quantum dot QLED display technology, a blue LED light source irradiates quantum dots to excite red light and green light, thereby displaying a very exquisite screen.

The quantum dot QLED display technology mainly comprises a quantum dot light emitting diode display technology (QLED) and a quantum dot backlight source technology (QD-BLU), wherein quantum dots have a light emitting characteristic, red light and green light are generated by the quantum dots in a quantum dot film (QDEF) under the backlight irradiation of a blue LED, and the red light and the green light are mixed with the rest blue light penetrating through the film to obtain white light, so that the light emitting effect of the whole backlight system is improved.

The quantum dot QLED display technology has the distinctive characteristic that each time the quantum dot is stimulated by light or electricity, the quantum dot can emit colored light, the color of the light is determined by the composition material, the size and the shape of the quantum dot, and the characteristic enables the quantum dot to change the color of the light emitted by a light source. Therefore, the quantum dot QLED display technology has high accuracy in color display, and an imaging picture is more stable.

The quantum dot QLED display technology has the advantages that the television brightness is effectively improved by 30-40%, under the condition that the color conversion efficiency of the backlight source system is greatly improved, the color of the picture is brighter, the characteristics of energy conservation, environmental protection and the like are considered, the picture brightness and the color purity are about 2 times of those of a WLED backlight system, and the performance improvement is very obvious. In consideration of the inherent shortage of physical properties of liquid crystal technology, quantum dot QLED display technology can bring about so many revolution, which is a major breakthrough of liquid crystal technology.

Since the stability of the image quality directly affects the viewing effect, the stability of the image quality is extremely important for the screen display. It is known that some panels require a "mask" for manufacturing, and the "mask" is susceptible to thermal expansion and contraction, thereby affecting display accuracy. The whole manufacturing process of the QLED does not need a photomask, so that the problem is avoided, and the image quality is kept stable for a long time.

in addition to the display advantages, the quantum dot QLED display technology is adopted, so that the manufacturing cost is lower. The technology is that the optical material of quantum dots is placed between the backlight and the liquid crystal panel, so that the color gamut can reach or exceed the level of an OLED (organic light emitting diode), even a polarizer on the light source side can be omitted, and the manufacturing cost of liquid crystal display products (used for liquid crystal televisions and liquid crystal displays) is effectively reduced. For the price of the current middle-high end display screen, the quantum dot QLED display technology with low cost and strong performance better meets the requirements of the consumer market.

in addition, the quantum dot QLED display technology can make colors better perform, and the NTSC value can reach more than 100%, that is, the red color is redder, the blue color is bluer, and the green color is greener.

After the introduction of the quantum dot display technology, another technique used in this application is called quantum confined stark effect, i.e., electrons can only travel on specific orbitals around the atom, each of which is associated with a certain energy level. When light with the appropriate energy (or the appropriate amount of wavelength) is injected. The electrons absorb the light and use its energy to transit to an adjacent orbital. The use of a strong electric field to the atoms can change the wavelength of light that the electrons can absorb. This phenomenon has been known to humans for over a century, and is known as the Stark effect. The stark effect allows the material to shield specific wavelengths of light, like a louver, and absorb various light when an engineer turns an electric field on or off.

since a sapphire substrate is used in general LED epitaxy, and stress is large in the sapphire substrate during the epitaxy, the wavelength of the LED shifts due to the generation of stress, and the absorption edge shifts in a low energy direction (blue shift) more as the stress decreases, which is also called a Quantum Confinement Stark Effect (QCSE).

By the above, the present invention can control different stress release according to different nanometer shapes and sizes, so as to adjust Quantum Confinement Stark Effect (QCSE), arbitrarily adjust wavelength, and emit required light.

disclosure of Invention

The present invention provides a structure of a quantum dot substrate of a micro led with nanorings, which includes a substrate, a green led layer formed on a surface of one side of the substrate, a plurality of geometrically shaped hollow devices formed on the surface of the green led layer, a red quantum dot disposed in a part of the hollow devices, and a Distributed Bragg Reflector (DBR) covering only the upper part of the hollow devices with the red quantum dot.

It is another object of the present invention that each of the hollow devices be of a wall thickness and a range of aspect ratios.

It is a further object of the invention that each of the devices exhibit a ring shape.

It is a further object of the invention that each of the devices presents a rectangular shape.

It is a further object of the invention that each of the devices exhibit a triangular shape.

It is a further object of the present invention that the devices filled with red quantum dots and the hollow devices without quantum dots are selectively adjacent.

another objective of the present invention is to provide a method for manufacturing a quantum dot substrate structure, which comprises the following steps:

Preparing a substrate;

Forming a green light emitting diode layer on one side of the substrate;

Forming a plurality of hollow devices on the green light emitting diode layer;

Spraying red quantum dots in a part of the hollow device;

Only the red quantum dots are coated with a distributed bragg reflector.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic diagram of a first step of a method for fabricating a quantum dot substrate of a micro light emitting diode with nanorings according to the present invention.

FIG. 2 is a second schematic diagram of a method for fabricating a quantum dot substrate of a micro-LED with nanorings according to the present invention.

FIG. 3 is a third schematic diagram of a method for fabricating a quantum dot substrate of a micro light emitting diode with nanorings according to the present invention.

FIG. 4 is a fourth step of the method for fabricating a quantum dot substrate of a micro light emitting diode with nanorings according to the present invention.

Fig. 5 is a schematic structural diagram of a method for manufacturing a quantum dot substrate structure of a micro light emitting diode with nanorings according to the present invention after completion of each step.

Detailed Description

The present invention relates to a method for manufacturing a quantum dot substrate of a micro light emitting diode with nanorings, and please refer to fig. 1 to 5.

referring to fig. 1 to 4, an embodiment of the present invention is shown, in which the method of the present invention includes providing a substrate 10 (e.g., a sapphire substrate), and growing a crystal on a surface of one side of the substrate 10 to form a green led layer 13; then, a plurality of hollow devices 20 with a blind hole are formed on the green LED layer 13; it should be noted that the hollow device 20 does not cover the entire green led layer 13, and the hollow device 20 is disposed on two thirds (2/3) of the area of the green led layer 13, and leaves one third (1/3) of the area of the green led layer 13, so that the green light can be directly emitted at a later time. At this time, the part of the hollow device 20 not filled with any substance emits blue light after excitation due to the action of QCSE, which is mainly the result of what is called Quantum Confined Stark Effect (QCSE) described above.

Then, a part (1/3) is taken from the hollow device 20 and filled with the red quantum dots 21 in a spraying manner, and then, a distributed bragg reflection layer 30 is attached to completely cover only the part of the red quantum dots 21; the distributed bragg reflector 30 is used to filter out the unwanted blue light emitted from the covered hollow devices 20, so as to complete the fabrication of the micro light emitting diode emitting red, green and blue light.

referring to fig. 5, the structure of the second embodiment of the present invention has a substrate 10, and a green light emitting diode layer 13 is formed on one side of the substrate 10; on the green led layer 13, a hollow device 20 with a geometric shape is formed; the hollow device 20 may be triangular, rectangular, annular, etc. as long as it has a blind hole. It should be noted that in this embodiment, the hollow device 20 only contains the red quantum dots 21, and the rest of the hollow device continues to maintain the hollow state. The outermost layer is a distributed bragg reflector 30 that covers the outermost layer, and the distributed bragg reflector 30(DBR) reflects blue light from the red quantum dots only to excite the red quantum dots and then generates red light, so that the DBR is not coated on the entire surface but only on the red light to filter out unwanted blue light.

Although the embodiments of the present invention do not have the above-mentioned shapes, the present invention can be easily modified or modified without departing from the scope and spirit of the present invention after reading the detailed description of the present invention.

Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.