阅读说明：本技术 具纳米环的微发光二极管量子点基板结构以及制作方法 (Micro light-emitting diode quantum dot substrate structure with nanorings and manufacturing method thereof ) 是由 郭浩中 佘庆威 朱国雄 宋琦丽 刘召军 张祐维 周嘉柔 张秋莹 于 2019-08-22 设计创作，主要内容包括：本发明公开了具纳米环的微发光二极管量子点基板的结构,其是包括了一基板、形成在该基板一侧表面上形成有一层的蓝光发光二极管层、在所述的蓝光发光二极管层的表面上形成有复数个具几何形状的中空装置、于一部份的中空装置中设有绿色的量子点,剩余的部份则设有红色的量子点,以及一层覆盖在所有复数个中空装置以及蓝光发光二极管上方的分布式布拉格反射层。(The invention discloses a structure of a micro light-emitting diode quantum dot substrate with a nanoring, which comprises a substrate, a blue light-emitting diode layer formed on the surface of one side of the substrate, a plurality of hollow devices with geometric shapes formed on the surface of the blue light-emitting diode layer, green quantum dots arranged in one part of the hollow devices, red quantum dots arranged in the rest part, and a distributed Bragg reflection layer covering all the plurality of hollow devices and the blue light-emitting diode.)

1. A structure of micro-LED quantum dot substrate with nanoring is characterized in that the structure comprises:

A substrate;

A blue light LED layer formed on one side surface of the substrate;

A plurality of hollow devices formed on the surface of the blue light emitting diode layer;

The green quantum dots are arranged in a part of the hollow device;

Red quantum dots disposed in the remaining hollow devices; and

A distributed Bragg reflector layer covering all of the plurality of hollow devices and the blue light emitting diode.

2. The structure of a nanoring-containing micro-led quantum dot substrate as claimed in claim 1, wherein each of the hollow devices has a ring shape.

3. the structure of a nanoring-containing micro-led quantum dot substrate as claimed in claim 1, wherein each of said hollow devices has a rectangular shape.

4. The structure of a nanoring-containing micro-led quantum dot substrate as claimed in claim 1, wherein each of said hollow devices has a triangular shape.

5. The structure of the nanoring-containing micro-led quantum dot substrate as claimed in claim 1, wherein the red quantum dots and the green quantum dots are selectively adjacent to each other.

6. a manufacturing method of a micro light emitting diode quantum dot substrate with a nanoring is characterized by comprising the following steps:

preparing a substrate;

Forming a blue light emitting diode layer on one side of the substrate;

Forming a plurality of hollow devices on the blue light-emitting diode layer;

spraying green quantum dots in a part of the hollow device;

Spraying red quantum dots in the rest hollow devices; and

and the blue light LED layer, the green quantum dots and the red quantum dots are coated by a distributed Bragg reflection layer.

7. the method as claimed in claim 6, wherein each of the hollow devices has a ring shape.

8. The method as claimed in claim 6, wherein each of the hollow devices has a rectangular shape.

9. the method as claimed in claim 6, wherein each of the hollow devices has a triangular shape.

10. the method as claimed in claim 6, wherein the red quantum dots and the green quantum dots are selectively adjacent to each other.

Technical Field

The invention mainly provides a substrate, in particular to a structure and a manufacturing method of a micro light-emitting diode quantum dot substrate, and particularly relates to a structure and a manufacturing method of a micro light-emitting diode quantum dot substrate with a nanoring; mainly adds the structure of the nanometer ring on the basis of the micro light-emitting diode; not only can effectively solve the problem of positioning when transferring a large amount, but also can avoid the mutual interference when each pixel emits light when each pixel with various colors is carried on the substrate.

Background

The composition of sapphire is alumina (A1)₂O₃) Three oxygen atoms and two aluminum atoms are combined in a covalent bond mode, the crystal structure is a hexagonal lattice structure, the optical penetration band of the sapphire is very wide, and the optical transmission band is formed by combining near ultraviolet light (190 nanometers; nm) to the middle infrared ray, and has the characteristics of high sound velocity, high temperature resistance, corrosion resistance, high hardness, high melting point (20452 ℃) and the like, so the material is often used as a substrate material of a photoelectric component.

The quality of the ultra-high brightness white/blue LED depends on the material quality of gallium nitride epitaxy (GaN), so that the lattice constant mismatch between the C surface of sapphire (single crystal A12O3) and III-V and II-VI deposition films is small, and the requirement of high temperature resistance of a GaN epitaxy process is met, so that the sapphire substrate becomes a key material for manufacturing a QLED display screen, and the processing quality of the surface of the sapphire substrate is related to the processing quality of the sapphire substrate.

QLED is a short hand for "Quantum Dot Light Emitting Diode", i.e. Quantum Dot Light Emitting Diode, and can also be used in the Quantum display technology. This is a new technology between liquid crystal and OLED, and the core technology is QuantumDots. Quantum dots are extremely small semiconductor nanocrystals invisible to the naked eye, and are particles with a particle size of less than 10 nm. In the quantum dot QLED display technology, a blue LED light source irradiates quantum dots to excite red light and green light, thereby displaying a very exquisite screen.

The quantum dot QLED display technology mainly comprises a quantum dot light emitting diode display technology (QLED) and a quantum dot backlight source technology (QD-BLU), wherein quantum dots have a light emitting characteristic, red light and green light are generated by the quantum dots in a quantum dot film (QDEF) under the backlight irradiation of a blue LED, and the red light and the green light are mixed with the rest blue light penetrating through the film to obtain white light, so that the light emitting effect of the whole backlight system is improved.

the quantum dot QLED display technology has the distinctive characteristic that each time the quantum dot is stimulated by light or electricity, the quantum dot can emit colored light, the color of the light is determined by the composition material, the size and the shape of the quantum dot, and the characteristic enables the quantum dot to change the color of the light emitted by a light source. Therefore, the quantum dot QLED display technology has high accuracy in color display, and an imaging picture is more stable.

the quantum dot QLED display technology has the advantages that the television brightness is effectively improved by 30-40%, under the condition that the color conversion efficiency of the backlight source system is greatly improved, the color of the picture is brighter, the characteristics of energy conservation, environmental protection and the like are considered, the picture brightness and the color purity are about 2 times of those of a WLED backlight system, and the performance improvement is very obvious. In consideration of the inherent shortage of physical properties of liquid crystal technology, quantum dot QLED display technology can bring about so many revolution, which is a major breakthrough of liquid crystal technology.

Since the stability of the image quality directly affects the viewing effect, the stability of the image quality is extremely important for the screen display. It is known that some panels require a "shadow mask" for manufacturing, and the "shadow mask" is susceptible to thermal expansion and contraction, thereby affecting display accuracy. The QLED does not need a shadow mask in the whole manufacturing process, so that the problem is avoided, and the image quality is kept stable for a long time.

in addition to the display advantages, the quantum dot QLED display technology is adopted, so that the manufacturing cost is lower. The technology is that the optical material of quantum dots is placed between the backlight and the liquid crystal panel, so that the color gamut can reach or exceed the level of an OLED (organic light emitting diode), even a polarizer on the light source side can be omitted, and the manufacturing cost of liquid crystal display products (used for liquid crystal televisions and liquid crystal displays) is effectively reduced. For the price of the current middle-high end display screen, the quantum dot QLED display technology with low cost and strong performance better meets the requirements of the consumer market.

In addition, the quantum dot QLED display technology can completely convert the blue light emitted by the LED light source into white light (the conventional YAG phosphor can only absorb a part of the blue light), which means that the quantum dot QLED needs less blue light and less electric power in the electro-optical conversion under the same brightness, thereby effectively reducing the power consumption assembly of the backlight system. From the above, quantum dot display technology has become a popular product in the market, and is a daily wait.

After the introduction of the quantum dot display technology, another technique used in this application is called quantum confined stark effect, i.e., electrons can only travel on specific orbitals around the atom, each of which is associated with a certain energy level. When light with the appropriate energy (or the appropriate amount of wavelength) is injected. The electrons absorb the light and use its energy to transit to an adjacent orbital. The use of a strong electric field to the atoms can change the wavelength of light that the electrons can absorb. This phenomenon has been known to humans for over a century, and is known as the Stark effect. The stark effect allows the material to shield specific wavelengths of light, like a louver, and absorb various light when an engineer turns an electric field on or off.

To produce the Stark effect in atoms, the voltages required are so high that they cannot be used in a chip. In some thin materials, however, a strong and sensitive stark effect, known as a quantum confined stark effect, can be produced at acceptable voltages. Many of today's high-end telecommunications equipment use thin materials to transmit data in optical fibers that produce this effect. When an external electric field is applied perpendicularly to the quantum well material, a Quantum Confinement Stark Effect (QCSE) is generated, and the absorption edge moves (red-shifts) more toward a low energy direction as the external field increases.

By the Quantum Confined Stark Effect (QCSE), the present invention can adjust the wavelength arbitrarily and emit the required light.

Disclosure of Invention

The present invention provides a structure of a quantum dot substrate of a micro led with nanorings, which includes a substrate, a blue led layer formed on a surface of one side of the substrate, a plurality of geometric hollow devices formed on the surface of the blue led layer, a green quantum dot disposed in a part of the hollow devices, a red quantum dot disposed in the remaining part, and a Distributed Bragg Reflector (DBR) covering all the plurality of hollow devices and the blue led.

it is another object of the present invention that each of the hollow devices be of a wall thickness and a range of aspect ratios.

it is a further object of the invention that each of the devices exhibit a ring shape.

It is a further object of the invention that each of the devices presents a rectangular shape.

it is a further object of the invention that each of the devices exhibit a triangular shape.

it is a further object of the present invention that the red quantum dot filled devices and the green quantum dot filled devices are selectively adjacent.

The present invention provides a structure of a quantum dot substrate of a micro led with nanorings, which includes a substrate, a green led layer formed on a surface of one side of the substrate, a plurality of geometrically shaped hollow devices formed on the surface of the green led layer, a part of the hollow devices, another part of the hollow devices having red quantum dots, and a Distributed Bragg Reflector (DBR) layer covering all the hollow devices and the blue leds.

It is another object of the present invention that each of the devices be of a certain wall thickness and a range of aspect ratios.

It is a further object of the invention that each of the devices exhibit a ring shape.

it is a further object of the invention that each of the devices presents a rectangular shape.

it is a further object of the invention that each of the devices exhibit a triangular shape.

It is a further object of the present invention that the red quantum dot filled devices and the hollow devices are selectively adjacent.

Another objective of the present invention is to provide a method for manufacturing a quantum dot substrate structure, which comprises the following steps:

preparing a substrate;

forming a blue light emitting diode layer on one side of the substrate;

Forming a plurality of hollow devices on the blue light-emitting diode layer;

Spraying green quantum dots in a part of the hollow device;

Spraying red quantum dots in the rest hollow devices; and

and the blue light LED layer, the green quantum dots and the red quantum dots are coated by a distributed Bragg reflection layer.

Another objective of the present invention is to provide a method for manufacturing a quantum dot substrate structure, which comprises the following steps:

Preparing a substrate;

Forming a green light emitting diode layer on one side of the substrate;

forming a plurality of hollow devices on the green light emitting diode layer;

Spraying red quantum dots in a part of the hollow device;

Then the rest hollow device is left on the green light LED layer; and

The green light-emitting diode layer, the red quantum dots and the hollow device are coated by a distributed Bragg reflection layer.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic diagram of a first step of a method for fabricating a quantum dot substrate of a micro light emitting diode with nanorings according to the present invention.

FIG. 2 is a second schematic diagram of a method for fabricating a quantum dot substrate of a micro-LED with nanorings according to the present invention

FIG. 3 is a third schematic diagram of a method for fabricating a quantum dot substrate of a micro-LED with nanorings according to the present invention

FIG. 4 is a fourth schematic diagram of a method for fabricating a quantum dot substrate of a micro-LED with nanorings according to the present invention

FIG. 5 is a fifth step of the method for fabricating a quantum dot substrate of a micro light emitting diode with nanorings according to the present invention.

Fig. 6 is a schematic structural diagram of a first method for fabricating a quantum dot substrate structure of a micro light emitting diode with nanorings according to the present invention after completion of the steps.

Detailed Description

The present invention relates to a method for manufacturing a quantum dot substrate of a micro light emitting diode with nanorings, and please refer to fig. 1 to 5.

The quantum dot substrate of micro led with nanoring provided in the present invention is prepared by growing crystal on a substrate 10 (such as sapphire substrate) to form a blue led layer 11; then, a plurality of hollow devices 20 with a blind hole are formed on the blue led layer 11; it should be noted that the hollow device 20 does not cover the entire blue led layer 11, and the hollow device 20 is disposed on two thirds (2/3) of the area of the blue led layer 11, and leaves one third (1/3) of the blue led layer 11.

Then, a part of the hollow device 20 is taken out and filled with the red quantum dots 21 in a spraying way, and then the remaining hollow device 20 is filled with the green quantum dots 22 in the same way; finally, a distributed bragg reflector 30 is attached to cover the red quantum dots 21 and the green quantum dots 22 completely; the distributed Bragg reflector 30 is used to filter out the unwanted UV light to complete the fabrication of the micro light emitting diode emitting red, green and blue light. In the case of the blue led layer 11 being a whole surface, the Distributed Bragg Reflector (DBR) 30 reflects the ultraviolet light of the light emitted from the red and green quantum dots 21 and 22 back to excite the red and green quantum dots, and then generates red and green light. The Distributed Bragg Reflector (DBR) layer 30 may reflect light of different colors (wavelength bands) depending on the process.

Referring to fig. 6, it can be seen that the structure manufactured by the method of the present invention for manufacturing a quantum dot substrate of micro-leds with nanorings has a substrate 10, a blue-light led layer 11 is disposed on the substrate 10, and a hollow device 20 occupying two-thirds of the area is disposed on one side of the blue-light led layer 11; each hollow device 20 has a geometrical shape, which may be rectangular, triangular, circular or any suitable shape, and a blind hole, respectively. Meanwhile, one part of the hollow device 20 is filled with red quantum dots 21, and the other part is filled with green quantum dots 22; the red quantum dots 21, the green quantum dots 22 and the blue led layer 11 are covered with a distributed bragg reflector 30 to filter out unwanted uv light.

Although the embodiments of the present invention do not have the above-mentioned shapes, the present invention can be easily modified or modified without departing from the scope and spirit of the present invention after reading the detailed description of the present invention.

although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.