阅读说明：本技术 一种uvc led封装器件及其制备方法 (UVC LED packaging device and preparation method thereof ) 是由 季韬 白明月 蒋幼泉 单卫平 赵清 袁松 邢婷婷 韩钰祺 于 2021-08-12 设计创作，主要内容包括：一种UVC LED封装器件及其制备方法,属于LED封装结构技术领域,该UVC LED封装器件,包括UVC芯片和封装支架,UVC芯片包括衬底,衬底正面的中部和外周分别设置功能区和隔离区,衬底的背面设置增透层；封装支架与隔离区共融焊接相连,封装支架的中部与功能区压紧接触相连,本发明的有益效果是,本发明采用了全无机封装,整体结构稳定可靠,布置合理,封装成本低,避免了UVC长期照射对器件性能的影响,减少了全反射损失,提高了光线传输效果和封装器件的使用寿命。(A UVC LED packaging device and a preparation method thereof belong to the technical field of LED packaging structures, and the UVC LED packaging device comprises a UVC chip and a packaging support, wherein the UVC chip comprises a substrate, the middle part and the periphery of the front surface of the substrate are respectively provided with a functional region and an isolation region, and the back surface of the substrate is provided with an anti-reflection layer; the invention has the advantages that the invention adopts full inorganic encapsulation, has stable and reliable integral structure, reasonable arrangement and low encapsulation cost, avoids the influence of UVC long-term irradiation on the device performance, reduces the total reflection loss, improves the light transmission effect and prolongs the service life of the encapsulated device.)

1. The UVC LED packaging device is characterized by comprising a UVC chip and a packaging support, wherein the UVC chip comprises a substrate, a functional region and an isolation region are respectively arranged in the middle and on the periphery of the front surface of the substrate, and an anti-reflection layer is arranged on the back surface of the substrate; the packaging support is connected with the isolation region in a co-melting and welding mode, and the middle of the packaging support is connected with the functional region in a pressing contact mode.

2. The UVC LED package device of claim 1, wherein: the anti-reflection layer is formed on the back of the substrate in an optical coating mode and is formed by alternately laminating high-refractive-index film layers and low-refractive-index film layers in sequence.

3. The UVC LED package device of claim 2, wherein: the transmittance of the anti-reflection layer at the wavelength of 260-280 nm is 99.5% -100%, the thickness of the low-refractive-index film layer is set to be 50-140 nm, and the thickness of the high-refractive-index film layer is set to be 40-80 nm.

4. A UVC LED packaged device according to any one of claims 1 to 3, wherein: the packaging support comprises an insulating substrate, a storage tube is connected to the middle of the upper end of the insulating substrate, metal electrodes are arranged on two sides of the bottom end of the insulating substrate respectively, a conductive piece penetrates through the insulating substrate, one end of the conductive piece is electrically connected with the storage tube and the electrodes of the functional areas, and the other end of the conductive piece is connected with the corresponding metal electrode.

5. The UVC LED packaged device of claim 4, wherein: the periphery of the insulating substrate is connected with a metal support, the upper surface of the metal support is plated with gold, the isolation region is provided with a metal bonding pad, the metal bonding pad is made of AuSn alloy, and the metal bonding pad is connected with the surface of the metal support in a co-melting and welding mode.

6. The UVC LED packaged device of claim 4, wherein: the middle part of the packaging support is in pressing contact connection with the functional area through an elastic pressing assembly.

7. The UVC LED package device of claim 6, wherein: the elastic pressing assembly is provided with a plurality of groups, the bottom end of the elastic pressing assembly is connected with the conductive piece and the Zener tube, and the upper end of the elastic pressing assembly is connected with the functional area electrode in a contact mode.

8. The UVC LED package device of claim 6, wherein: the elastic compression assembly comprises a metal block and a telescopic conductive piece connected to the metal block, the bottom end of the metal block is connected with the conductive piece and the Zener pipe, and the upper end of the metal block is in elastic contact connection with the functional area electrode through the telescopic conductive piece.

9. A preparation method of the UVC LED packaging device according to any one of claims 1 to 8, wherein the method comprises the following steps:

step 1: preparing a UVC chip, and preparing a functional area on the front side of a substrate; etching an isolation region at the periphery of the functional region, and plating AuSn alloy on the isolation region to form a metal bonding pad; preparing an anti-reflection layer on the back of the substrate; cutting into chip shape;

step 2: preparing a packaging support, connecting a metal support at the periphery of an insulating substrate, connecting a Zener pipe in the middle of the insulating substrate, embedding a metal electrode at the bottom end of the insulating substrate, embedding a conductive piece in the insulating substrate, and connecting the conductive piece with the metal electrode after the conductive piece extends out of the bottom end of the insulating substrate;

and step 3: the packaging support is connected with an elastic pressing assembly, the conductive piece extends out of the upper end of the insulating substrate and then is connected with the Zener tube through a metal block in a welding mode, and the telescopic conductive piece is embedded into the metal block;

and 4, step 4: connecting the packaging support with the UVC chip, plating gold on the upper surface of the metal support, carrying out co-melting welding connection on the surface of the metal support and the metal bonding pad, and simultaneously enabling the telescopic conductive piece to be electrically connected with the electrode of the functional area in a contact manner.

10. The method of making a UVC LED package device of claim 9, wherein: in the step 1, the process of preparing the functional region on the substrate is that an epitaxial layer grows on the substrate, and an epitaxial layer buffer layer ALN, an N-type AlGaN region, a light emitting region, a P-type AlGaN region and P-GaN are sequentially grown on the epitaxial layer in a stacking manner; in the step 4, the temperature for the co-melting welding connection of the surface of the metal support and the metal bonding pad is set to be 220-280 ℃.

Technical Field

The invention relates to the technical field of LED packaging structures, in particular to a UVC LED packaging device and a preparation method thereof.

Background

With the continuous improvement of the UVC ultraviolet sterilization technology and the gradual reduction of the cost, the UVC LED is bound to be widely applied, and the existing UVC LED packaging mode adopts a single UVC chip or a plurality of UVC chips. The current packaging forms of UVC LEDs are classified into organic packaging, semi-inorganic packaging (also referred to as "near-inorganic packaging"), and all-inorganic packaging. The organic package is made of organic materials such as silica gel, silicone resin or epoxy resin, and mainly includes products such as Lamp, SMD, ceramic Molding, and the like, and the overall technology is mature, but the ultraviolet resistance needs to be further improved. The semi-inorganic package adopts organic silicon materials and inorganic materials such as glass and the like. The full-inorganic packaging avoids using organic materials in the whole process, the combination of the lens and the substrate is realized through laser welding, wave soldering, resistance welding and other modes, the light attenuation problem caused by the organic materials and the failure problem caused by the damp heat stress are completely reduced, and the stability and the reliability of the UVC LED device can be accurately and effectively improved.

At present, a semi-inorganic packaging product is still the mainstream of the domestic market and mainly comprises a ceramic substrate, a chip, a bracket and quartz glass, wherein the chip is placed on the ceramic substrate, the anode and the cathode of the chip are connected with the bracket through circuits, and the upper end of the bracket is coated with organic glue and then is connected with the quartz glass. An accommodating cavity is enclosed among the quartz glass, the ceramic substrate and the bracket, and air, inert gas or non-gas are filled in the accommodating cavity.

The current semi-inorganic packaging products have the following disadvantages: 1. the light transmission effect is poor: when the accommodating cavity is filled with air and inert gas, the refractive index of the accommodating cavity is close to 1, the refractive index of a sapphire substrate commonly used by the UVC LED chip is 1.7, and the refractive index of quartz glass is 1.4-1.6, so that ultraviolet light emitted from the UVC LED chip enters the cavity and then enters the quartz glass from the cavity, and more total reflection loss exists in the process of entering the quartz glass from the cavity, so that the transmission of light rays can be influenced; organic glue is coated on the upper end of the support, and the organic glue can cause deterioration under long-term irradiation of UVC, so that gas in the accommodating cavity leaks outwards, and transmission of light is affected. 2. The product packaging cost is high: when the containing cavity is filled with the organic polymer, the organic material can deteriorate under the long-term irradiation of UVC, so that the transmission of light is influenced, the organic material is required to resist the radiation of the UVC and can not absorb ultraviolet rays, the material price is increased, and the production cost is greatly increased. 3. Structural stability is poor, and spatial arrangement is unreasonable: the support links to each other with quartz glass through organic glue, is separated by great distance between quartz glass and the base plate, makes quartz glass form the cantilever beam structure, can't guarantee overall structure's stability, because form the holding chamber between great distance and the support of being separated by between quartz glass and the base plate, the holding intracavity contains interconnecting link, makes spatial arrangement unreasonable, and there is the risk that the circuit drops in the setting of interconnecting link moreover, can make whole encapsulation product inefficacy.

How to improve the existing UVC LED package structure to solve the above problems is a problem in the current UVC LED package industry.

Disclosure of Invention

In order to solve the technical problems, the invention provides the UVC LED packaging device and the preparation method thereof, the full-inorganic packaging is adopted, the overall structure is stable, the arrangement is reasonable, the packaging cost is low, the influence of the long-term irradiation of UVC on the device performance is avoided, the total reflection loss is reduced, and the light transmission effect is improved.

In order to achieve the purpose, the technical scheme adopted by the invention for solving the technical problems is as follows: the UVC LED packaging device comprises a UVC chip and a packaging support, wherein the UVC chip comprises a substrate, a functional region and an isolation region are respectively arranged in the middle and on the periphery of the front surface of the substrate, and an anti-reflection layer is arranged on the back surface of the substrate; the packaging support is connected with the isolation region in a co-melting and welding mode, and the middle of the packaging support is connected with the functional region in a pressing contact mode.

The anti-reflection layer is formed on the back of the substrate in an optical coating mode and is formed by alternately laminating high-refractive-index film layers and low-refractive-index film layers in sequence.

The transmittance of the anti-reflection layer at the wavelength of 260-280 nm is 99.5% -100%, the thickness of the low-refractive-index film layer is set to be 50-140 nm, and the thickness of the high-refractive-index film layer is set to be 40-80 nm.

The packaging support comprises an insulating substrate, a storage tube is connected to the middle of the upper end of the insulating substrate, metal electrodes are arranged on two sides of the bottom end of the insulating substrate respectively, a conductive piece penetrates through the insulating substrate, one end of the conductive piece is electrically connected with the storage tube and the electrodes of the functional areas, and the other end of the conductive piece is connected with the corresponding metal electrode.

The periphery of the insulating substrate is connected with a metal support, the upper surface of the metal support is plated with gold, the isolation region is provided with a metal bonding pad, the metal bonding pad is made of AuSn alloy, and the metal bonding pad is connected with the surface of the metal support in a co-melting and welding mode.

The middle part of the packaging support is in pressing contact connection with the functional area through an elastic pressing assembly.

The elastic pressing assembly is provided with a plurality of groups, the bottom end of the elastic pressing assembly is connected with the conductive piece and the Zener tube, and the upper end of the elastic pressing assembly is connected with the functional area electrode in a contact mode.

The elastic compression assembly comprises a metal block and a telescopic conductive piece connected to the metal block, the bottom end of the metal block is connected with the conductive piece and the Zener pipe, and the upper end of the metal block is in elastic contact connection with the functional area electrode through the telescopic conductive piece.

A preparation method of the UVC LED packaging device comprises the following steps:

step 1: preparing a UVC chip, and preparing a functional area on the front side of a substrate; etching an isolation region at the periphery of the functional region, and plating AuSn alloy on the isolation region to form a metal bonding pad; preparing an anti-reflection layer on the back of the substrate; cutting into chip shape;

step 2: preparing a packaging support, connecting a metal support at the periphery of an insulating substrate, connecting a Zener pipe in the middle of the insulating substrate, embedding a metal electrode at the bottom end of the insulating substrate, embedding a conductive piece in the insulating substrate, and connecting the conductive piece with the metal electrode after the conductive piece extends out of the bottom end of the insulating substrate;

and step 3: the packaging support is connected with an elastic pressing assembly, the conductive piece extends out of the upper end of the insulating substrate and then is connected with the Zener tube through a metal block in a welding mode, and the telescopic conductive piece is embedded into the metal block;

and 4, step 4: connecting the packaging support with the UVC chip, plating gold on the upper surface of the metal support, carrying out co-melting welding connection on the surface of the metal support and the metal bonding pad, and simultaneously enabling the telescopic conductive piece to be electrically connected with the electrode of the functional area in a contact manner.

In the step 1, the process of preparing the functional region on the substrate is that an epitaxial layer grows on the substrate, and an epitaxial layer buffer layer ALN, an N-type AlGaN region, a light emitting region, a P-type AlGaN region and P-GaN are sequentially grown on the epitaxial layer in a stacking manner; in the step 4, the temperature for the co-melting welding connection of the surface of the metal support and the metal bonding pad is set to be 220-280 ℃.

The invention has the beneficial effects that:

1. according to the invention, the anti-reflection layer is arranged on the back surface of the UVC chip and is formed by alternately laminating the high-refractive-index film layers and the low-refractive-index film layers in sequence, so that the existing quartz glass is replaced, the transmissivity of the UVC chip in the wavelength range is close to 100%, the total reflection loss is reduced, and the transmission effect of light is improved.

2. According to the invention, gold is plated on the surface of the metal support, the AuSn alloy is plated on the isolation region on the periphery of the substrate to form the metal bonding pad, and the gold on the surface of the metal support and the metal bonding pad are fused and welded together at a certain temperature, so that the conventional organic glue is replaced, the problem of deterioration under long-term irradiation of UVC is avoided, the integral performance of the packaging device is ensured, and the service life of the packaging device is prolonged.

3. According to the invention, the periphery of the UVC chip is connected with the insulating substrate through the metal support, the functional region in the middle of the UVC chip is connected with the Zener tube through the elastic pressing component, and the elastic pressing component is connected with the metal electrode through the conductive component, so that the middle of the UVC chip is connected with the insulating substrate support.

4. According to the invention, the metal blocks are connected to the upper ends of the zener tube and the conductive piece, and the metal blocks are in contact connection with the electrodes on the functional region of the UVC chip through the telescopic conductive piece, so that the UVC chip is in compression contact with the metal blocks, and the reliability of the electrical connection between the UVC chip and the metal electrodes is improved.

In conclusion, the invention adopts the all-inorganic packaging, has stable and reliable integral structure, reasonable arrangement and low packaging cost, avoids the influence of UVC long-term irradiation on the device performance, reduces the total reflection loss, improves the light transmission effect and prolongs the service life of the packaged device.

Drawings

The contents of the expressions in the various figures of the present specification and the labels in the figures are briefly described as follows:

fig. 1 is a schematic structural diagram of a UVC LED package device;

FIG. 2 is a schematic diagram of an anti-reflection layer in the packaged device;

FIG. 3 is a graph of transmission of an anti-reflective layer in a packaged device over different wavelength ranges;

FIG. 4 is a flow chart of a manufacturing process of a UVC LED package device;

the labels in the above figures are: the chip comprises a UVC chip 1, a UVC chip 11, a substrate 12, a functional region 13, an isolation region 2, an antireflection layer 21, a high-refractive-index film layer 22, a low-refractive-index film layer 3, an insulating substrate 3, a Zener tube 4, a metal electrode 5, a conductive piece 6, an elastic pressing assembly 7, a metal block 71, a telescopic conductive piece 72, a metal support 8 and a metal pad 9.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and the following embodiments are used for illustrating the present invention and are not intended to limit the scope of the present invention.

In the description of the present invention, it should be noted that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

The specific implementation scheme of the invention is as follows: as shown in fig. 1, a UVC LED package device includes a UVC chip 1 and a package support, where the UVC chip 1 includes a substrate 11, a functional region 12 and an isolation region 13 are respectively disposed in the middle and at the periphery of the front surface of the substrate 11, and an anti-reflection layer 2 is disposed on the back surface of the substrate 11, and is used to replace existing quartz glass by disposing the anti-reflection layer 2 on the back surface of the substrate 11, and improve the transmittance of UVC by adjusting the structure of the anti-reflection layer 2; the packaging support and the isolation region 13 are connected in a co-melting and welding mode, the existing organic glue is replaced, the problem of deterioration under long-term irradiation of UVC is solved, the overall performance of the packaging device is guaranteed, and the service life of the packaging device is prolonged; the middle part of the packaging support is connected with the functional region 12 in a pressing contact mode, and therefore the reliability of electric connection of the UVC chip 1 and the packaging support is improved.

Specifically, the anti-reflection layer 2 is formed on the back of the substrate 11 in an optical coating mode, the anti-reflection layer 2 is formed by alternately laminating high refractive index film layers 21 and low refractive index film layers 22 in sequence, the high refractive index film layers 21 can be formed by coating films of titanium oxide, tantalum oxide and the like, the low refractive index film layers 22 can be formed by coating films of magnesium fluoride, silicon oxide, aluminum oxide and the like, the thickness of the low refractive index film layers 22 is set to be 50-140 nm, the thickness of the high refractive index film layers 21 is set to be 40-80 nm, the number of the high refractive index film layers 21 and the number of the low refractive index film layers 22 can be set according to the material and the thickness of the film layers, the anti-reflection layer 2 with the structure enables the transmissivity of UVC (with the wavelength of 260-280 nm) to be 99.5-100%, the total reflection loss of the UVC chip 1 is reduced, and the transmission effect of light is improved.

Specifically, the packaging support comprises an insulating substrate 3, a Zener tube 4 is connected to the middle of the upper end of the insulating substrate 3, metal electrodes 5 are embedded into two sides of the bottom end of the insulating substrate 3 respectively, a conductive piece 6 penetrates through the insulating substrate 3, one end of the conductive piece 6 is electrically connected with the Zener tube 4 and the electrode of the functional region 12, the other end of the conductive piece 6 is connected with the metal electrodes 5, the Zener tube 4 and the UVC chip 1 are both electrically connected with the metal electrodes 5, and the Zener tube 4 and the UVC chip 1 can work normally after the metal electrodes 5 are electrified.

The periphery of the insulating substrate 3 is connected with a metal support 8, the upper surface of the metal support 8 is plated with gold, an isolation region 13 is provided with a metal bonding pad 9, the metal bonding pad 9 is made of AuSn alloy, the metal bonding pad 9 and the surface of the metal support 8 are fused and welded together, so that the metal support 8 and the UVC chip 1 are connected more firmly and stably, the conventional organic glue is replaced by the fusion welding mode, the problem of deterioration under the long-term irradiation of the UVC is solved, the integral performance of a packaging device is guaranteed, and the service life of the packaging device is prolonged.

Specifically, the middle part of the packaging support is connected with the functional region 12 in a pressing contact mode through the elastic pressing assembly 7, the processing procedures of fixed connection are reduced, the processing cost is reduced, and the reliability of the electrical connection between the UVC chip 1 and the packaging support is guaranteed in a pressing contact mode.

In order to make the connection structure between the UVC chip 1 and the insulating substrate 3 more stable, a plurality of sets of elastic pressing assemblies 7 are provided, the bottom ends of the elastic pressing assemblies 7 are connected with the conductive members 6 and the zener tubes 4, and the upper ends of the elastic pressing assemblies 7 are connected with the electrodes on the functional region 12 in a contact manner.

The specific structure of the elastic pressing assembly 7 comprises a metal block 71 and a telescopic conductive piece 72 connected to the metal block 71, the bottom end of the metal block 71 is connected with the conductive piece 6 and the zener tube 4 in a welding mode, the upper end of the metal block 71 is connected with the electrode on the functional region 12 in an elastic contact mode through the telescopic conductive piece 72, the telescopic conductive piece 72 can be arranged to be an elastic piece such as a spring, the elastic pressing contact between the UVC chip 1 and the metal block 71 is achieved, and the reliability of the electric connection between the UVC chip 1 and the metal electrode 5 is improved.

According to the invention, the periphery of the UVC chip 1 is connected with the insulating substrate 3 through the metal support 8, the functional region in the middle of the UVC chip 1 is connected with the zener tube 4 through the elastic pressing component 7, the elastic pressing component 7 is connected with the metal electrode 5 through the conductive piece 6, so that the middle of the UVC chip 1 is supported and connected with the insulating substrate 3, on one hand, the middle and the periphery of the UVC chip 1 are supported and connected with the insulating substrate 3, the packaging structure is more reasonable in arrangement, the whole packaging structure is more stable, on the other hand, the zener tube 4 arranged on the insulating substrate 3 plays a role in electrostatic discharge, and the antistatic index of the whole packaging structure is improved.

The preparation method of the UVC LED packaging device comprises the following steps:

step 1: preparation of UVC chip 1

Firstly, a functional region 12 is prepared on the front surface of a substrate 11, that is, an epitaxial layer conforming to the UVC band is grown on the substrate 11, and comprises an epitaxial layer buffer layer ALN, an N-type AlGaN region, a light emitting region, a P-type AlGaN region and P-GaN. Etching through the epitaxy to the N-type AlGaN region by photoetching and dry etching methods to manufacture a chip N region, manufacturing an N-type electrode TI/AL/NI/AU by using an electron beam evaporation machine, rapidly annealing in a nitrogen environment to form ohmic contact, manufacturing a P region on the surface by photoetching, manufacturing a P-type electrode NI/AU by using the electron beam evaporation machine, and annealing in an atmospheric environment to form ohmic contact;

secondly, forming an isolation region 13 after completely etching the epitaxial layer at the periphery of the front functional region of the substrate 11 by isolation etching, separating core particles, and depositing SIO by using a PECVD machine₂Protecting the surface and the side face of the UVC chip 1, manufacturing welding power on the isolation region 13 by using an evaporation machine, and plating AuSn alloy on the isolation region 13 by using photoetching and evaporation modes to form a metal bonding pad 9;

then, alternately plating high-refractive-index film layers 21 and low-refractive-index film layers 22 on the back of the substrate 11 to prepare an antireflection layer 2, and ensuring that the transmittance at the wavelength of 260-280 nm is 99.5% -100%;

finally, the wafer is cut into chip shape by a cutting machine.

Step 2: preparing the packaging support

Firstly, connecting a Zener tube 4 in the middle of an insulating substrate 3 in an embedding mode, embedding a plurality of metal electrodes 5 at the bottom end of the insulating substrate 3, embedding a plurality of conductive pieces 6 in the insulating substrate 3, and connecting the conductive pieces 6 with the corresponding metal electrodes 5 after extending out of the bottom end of the insulating substrate 3;

then, set up a plurality of metal support 8 in insulating substrate 3's periphery, through set up the constant head tank on insulating substrate 3, coating one deck metal level in the constant head tank makes metal support 8's bottom and the constant head tank welding that corresponds link to each other, and welded mode has improved the fastness of being connected between metal support 8 and the insulating substrate 3 through the joint back.

And step 3: the elastic pressing component 7 is connected on the packaging support

The conductive member 6 extends out of the upper end of the insulating substrate 3 and is connected with the electrode on the Zener tube 4 by welding through the metal block 71, and the telescopic conductive member 72 is embedded in the metal block 71, so that one end of the telescopic conductive member 72 leaks.

And 4, step 4: connecting the packaging support with the UVC chip 1

Plating gold on the upper surface of the metal support 8, and melting and welding the surface of the metal support 8 and the metal pad 9 at 220-280 ℃, and simultaneously electrically contacting and connecting the telescopic conductive piece 72 with the electrode of the functional area 12.

In conclusion, the invention adopts the all-inorganic packaging, has stable and reliable integral structure, reasonable arrangement and low packaging cost, avoids the influence of UVC long-term irradiation on the device performance, reduces the total reflection loss, improves the light transmission effect and prolongs the service life of the packaged device.

While the foregoing is directed to the principles of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.