阅读说明：本技术 一种数据读取方法、存储控制器及电子设备 (Data reading method, storage controller and electronic equipment ) 是由 夏天 贾学超 陈一帆 于 2019-05-31 设计创作，主要内容包括：本申请公开了一种固态硬盘数据读取方法,包括：控制器接收主机发送的包括请求数据的位置指示信息的读请求；根据位置指示信息所指示的目标物理位置,确定目标物理位置所在的目标存储区域对应的目标读电压模型,非易失存储介质中每个存储区域包括多个按照目标划分粒度划分得到的目标存储单元,读电压模型为关于目标存储单元的标识的函数；从存储区域与读电压模型的参数值的对应关系中,获取目标读电压模型的参数值；根据目标物理位置所在的目标存储单元的标识、目标读电压模型以及目标读电压模型的参数值,确定目标物理位置对应的读电压；根据目标物理位置对应的读电压,获取请求数据并发送给主机。(The application discloses a solid state disk data reading method, which comprises the following steps: the method comprises the steps that a controller receives a read request which is sent by a host and comprises position indication information of requested data; according to the target physical position indicated by the position indication information, determining a target read voltage model corresponding to a target storage area where the target physical position is located, wherein each storage area in the nonvolatile storage medium comprises a plurality of target storage units which are obtained by dividing according to target division granularity, and the read voltage model is a function of the identification of the target storage unit; acquiring a parameter value of a target reading voltage model from a corresponding relation between the storage area and the parameter value of the reading voltage model; determining a reading voltage corresponding to the target physical position according to the identification of the target storage unit where the target physical position is located, the target reading voltage model and the parameter value of the target reading voltage model; and acquiring request data according to the reading voltage corresponding to the target physical position and sending the request data to the host.)

A data reading method is applied to a controller, the front end of the controller is used for connecting a host, and the back end of the controller is used for connecting a nonvolatile storage medium, and the method comprises the following steps:

the controller receives a read request sent by a host, wherein the read request comprises position indication information of request data;

the controller determines a target reading voltage model corresponding to a target storage area where the target physical position is located according to the target physical position indicated by the position indication information; the target physical location is a physical location of the request data in the nonvolatile storage medium, the nonvolatile storage medium includes one or more storage regions, each storage region includes a plurality of target storage units obtained by dividing the nonvolatile storage medium according to a target division granularity, and the read voltage model is a function of an identifier of the target storage unit;

the controller acquires a parameter value of the target reading voltage model corresponding to the target storage area from the corresponding relation between the storage area and the parameter value of the reading voltage model according to the target storage area; in the corresponding relation between the storage areas and the parameter values of the reading voltage model, one storage area corresponds to one or more parameters of the reading voltage model;

the controller determines a reading voltage corresponding to the target physical position according to the identification of the target storage unit where the target physical position is located, the target reading voltage model and the parameter value of the target reading voltage model;

and the controller acquires the request data according to the read voltage corresponding to the target physical position and sends the request data to the host.

The method of claim 1, wherein the obtaining, by the controller, the parameter value of the target read voltage model corresponding to the target storage region from the correspondence between the storage region and the parameter value of the read voltage model according to the target storage region comprises:

and when the target storage area corresponds to the parameter values of the plurality of read voltage models in the corresponding relationship between the storage area and the parameter values of the read voltage models, the controller selects one or more of the parameter values of the plurality of read voltage models corresponding to the target storage area as the target read voltage model parameters according to the target physical position.

The method of claim 1 or 2, wherein the determining, by the controller, the target read voltage model corresponding to the target storage area where the target physical location is located according to the target physical location indicated by the location indication information includes:

and the controller determines a target reading voltage model corresponding to the target storage area where the target physical position is located from the corresponding relation between the storage area and the reading voltage model according to the target physical position indicated by the position indication information.

The method of any one of claims 1-3, wherein the read voltage model is used to characterize the correspondence of the identity of the target memory cell to an optimal read voltage.

The method of any of claims 1-4, wherein the parameter values of the target read voltage model include coefficients of the identity of the target memory cell in the function of the identity of the target memory cell and values of constant terms in the function of the identity of the target memory cell;

the controller determines, according to the identifier of the target storage unit where the target physical location is located, the target read voltage model, and the parameter value of the target read voltage model, a read voltage corresponding to the target physical location, including:

the controller determines a function which is satisfied by the read voltage in the target storage area and the identification of the target storage unit in the target storage area according to the target read voltage model and the parameter value of the target read voltage model;

and the controller calculates the reading voltage corresponding to the target physical position according to the identification of the target storage unit where the target physical position is located and a function which is satisfied by the reading voltage in the target storage area and the identification of the target storage unit in the target storage area.

The method of any one of claims 1-5, further comprising:

and when any one of the storage areas meets a preset updating condition, the controller updates the parameter value of the reading voltage model corresponding to the storage area in the corresponding relation between the storage area and the parameter value of the reading voltage model.

The method of claim 6, wherein when any one of the storage areas satisfies a preset updating condition, the controller updates the parameter value of the read voltage model corresponding to the storage area in the correspondence relationship between the storage area and the parameter value of the read voltage model, including:

when the controller is in a system idle time window or meets a preset updating period, the controller determines a first error parameter under any one corresponding reading voltage in each storage area;

and when the first error parameter is larger than or equal to a first threshold value, the controller updates the parameter value of the read voltage model corresponding to the storage area in the corresponding relation between the storage area and the parameter value of the read voltage model.

The method of claim 7, wherein the preset update period is related to a usage status of the storage area; alternatively, the preset update period is related to an average service life of a plurality of storage areas included in the nonvolatile storage medium.

The method according to any one of claims 1 to 8, wherein for any one of the storage regions in the correspondence relationship between the storage region and the parameter values of the read voltage model, when the storage region corresponds to the parameter values of the plurality of read voltage models, the storage region is compressed into one read voltage model corresponding to the parameter values of the plurality of read voltage models that satisfy a set condition that the parameter values of the read voltage models are the same or nearly flat.

The method of any one of claims 1-9, further comprising:

and after the controller executes rewriting or erasing operation on the data in one storage area, initializing a parameter value of a read voltage model corresponding to the storage area executing the rewriting or erasing operation to a set value, wherein the set value is a default value or a preset value which is preset and determined according to the read voltage characteristic of the storage area executing the rewriting or erasing operation.

The method of claim 10, wherein the controller performs a rewrite operation or an erase operation on data in one of the storage areas, comprising:

the controller performs a rewrite operation or an erase operation on all data in one of the storage areas.

The method according to any one of claims 1 to 11, wherein the target storage unit is any one of a grain die, a Plane, a block, a string, a layer, and a page;

or the target storage unit is a storage unit formed by a plurality of die;

or the target storage unit is a storage unit formed by a plurality of planes;

or the target storage unit is a storage unit formed by a plurality of blocks;

or the target storage unit is a storage unit formed by a plurality of strings;

or the target storage unit is a storage unit formed by a plurality of layers;

alternatively, the target storage unit is a storage unit composed of a plurality of pages.

A storage controller, comprising: a receiving unit, a processing unit and a transmitting unit;

the receiving unit is used for receiving a read request sent by a host, wherein the read request comprises position indication information of request data;

the processing unit is configured to determine, according to the target physical location indicated by the location indication information, a target read voltage model corresponding to a target storage area where the target physical location is located; the target physical location is a physical location of the request data in the nonvolatile storage medium, the nonvolatile storage medium includes one or more storage regions, each storage region includes a plurality of target storage units obtained by dividing the nonvolatile storage medium according to a target division granularity, and the read voltage model is a function of an identifier of the target storage unit; according to the target storage area, obtaining the parameter value of the target reading voltage model corresponding to the target storage area from the corresponding relation between the storage area and the parameter value of the reading voltage model, wherein in the corresponding relation between the storage area and the parameter value of the reading voltage model, one storage area corresponds to one or more parameters of the reading voltage model; determining a reading voltage corresponding to the target physical position according to the identification of the target storage unit where the target physical position is located, the target reading voltage model and the parameter value of the target reading voltage model; acquiring the request data according to the reading voltage corresponding to the target physical position;

and the sending unit is used for sending the request data to the host.

The memory controller according to claim 13, wherein the processing unit, when obtaining the parameter value of the target read voltage model corresponding to the target memory region from the correspondence between the memory region and the parameter value of the read voltage model according to the target memory region, is specifically configured to:

and when the target storage area corresponds to the parameter values of the plurality of read voltage models in the corresponding relationship between the storage area and the parameter values of the read voltage models, selecting one or more of the parameter values of the plurality of read voltage models corresponding to the target storage area as the target read voltage model parameters according to the target physical position.

The storage controller according to claim 13 or 14, wherein the processing unit, when determining the target read voltage model corresponding to the target storage area where the target physical location is located according to the target physical location indicated by the location indication information, is specifically configured to:

and determining a target reading voltage model corresponding to the target storage area where the target physical position is located from the corresponding relation between the storage area and the reading voltage model according to the target physical position indicated by the position indication information.

The memory controller of any of claims 13-15, wherein the read voltage model is used to characterize the correspondence of the identity of the target memory cell to an optimal read voltage.

The memory controller of any of claims 12-16, wherein the parameter values of the target read voltage model include coefficients of the identity of the target memory cell in the function of the identity of the target memory cell and values of constant terms in the function of the identity of the target memory cell;

when determining the read voltage corresponding to the target physical location according to the identifier of the target storage unit where the target physical location is located, the target read voltage model, and the parameter value of the target read voltage model, the processing unit is specifically configured to:

determining a function which is satisfied by the read voltage in the target storage area and the identification of the target storage unit in the target storage area according to the target read voltage model and the parameter value of the target read voltage model;

and calculating the reading voltage corresponding to the target physical position according to the identification of the target storage unit where the target physical position is located and a function which is satisfied by the reading voltage in the target storage area and the identification of the target storage unit in the target storage area.

The storage controller of any of claims 13-17, wherein the processing unit is further to: and when any one of the storage areas meets a preset updating condition, updating the parameter value of the reading voltage model corresponding to the storage area in the corresponding relation between the storage area and the parameter value of the reading voltage model.

The memory controller according to claim 18, wherein the processing unit, when updating the parameter of the read voltage model corresponding to the memory region in the correspondence between the parameter values of the memory region and the read voltage model, is specifically configured to:

when the memory controller is in a system idle time window or meets a preset updating period, determining a first error parameter under any one corresponding reading voltage in each memory area;

and when the first error parameter is larger than or equal to a first threshold value, updating the parameter value of the reading voltage model corresponding to the storage area in the corresponding relation between the storage area and the parameter value of the reading voltage model.

The storage controller of claim 19, wherein the preset update period is related to a usage status of the storage area; alternatively, the preset update period is related to an average service life of a plurality of storage areas included in the nonvolatile storage medium.

The memory controller according to any one of claims 13 to 20, wherein for any one of the correspondence relationships between the memory region and the parameter values of the read voltage model, when the memory region corresponds to the parameter values of a plurality of read voltage models, the memory region is compressed into one read voltage model corresponding to the parameter values of a plurality of read voltage models that satisfy a set condition that the parameter values of the read voltage models are the same or nearly flat.

The storage controller of any of claims 13-21, wherein the processing unit is further to: after rewriting or erasing operation is carried out on the data in one storage area, initializing the parameter value of a read voltage model corresponding to the storage area which carries out the rewriting or erasing operation to a set value;

the set value is a default value or a preset value which is configured in advance and determined according to the read voltage characteristic of a storage area for executing the rewriting operation or the erasing operation.

The memory controller of claim 22, wherein the processing unit, when performing a rewrite operation or an erase operation on data in one of the memory areas, is specifically configured to:

an overwrite operation or an erase operation is performed on all data in one of the storage areas.

The storage controller of any of claims 13-23, wherein the target storage unit is any of a die, a Plane, a block, a string, a layer, and a page;

or the target storage unit is a storage unit formed by a plurality of die;

or the target storage unit is a storage unit formed by a plurality of planes;

or the target storage unit is a storage unit formed by a plurality of blocks;

or the target storage unit is a storage unit formed by a plurality of strings;

or the target storage unit is a storage unit formed by a plurality of layers;

alternatively, the target storage unit is a storage unit composed of a plurality of pages.

An electronic device comprising a communication interface, a controller, and a memory;

the communication interface is used for receiving a read request sent by a host, wherein the read request comprises position indication information of request data;

the memory stores code instructions;

the controller is used for calling the code instructions stored by the memory and executing: determining a target reading voltage model corresponding to a target storage area where the target physical position is located according to the target physical position indicated by the position indication information; the target physical location is a physical location of the request data in the nonvolatile storage medium, the nonvolatile storage medium includes one or more storage areas, each storage area includes a plurality of target storage units obtained by dividing the nonvolatile storage medium according to a target division size, and the read voltage model is a function of an identifier of the target storage unit; according to the target storage area, obtaining the parameter value of the target reading voltage model corresponding to the target storage area from the corresponding relation between the storage area and the parameter value of the reading voltage model, wherein in the corresponding relation between the storage area and the parameter value of the reading voltage model, one storage area corresponds to one or more parameters of the reading voltage model; determining a reading voltage corresponding to the target physical position according to the identification of the target storage unit where the target physical position is located, the target reading voltage model and the parameter value of the target reading voltage model; acquiring the request data according to the reading voltage corresponding to the target physical position;

the communication interface is further configured to: and sending the request data to the host.

The apparatus of claim 25, wherein the controller, when obtaining the parameter value of the target read voltage model corresponding to the target storage area from the correspondence between the parameter values of the read voltage model and the storage area according to the target storage area, is specifically configured to:

and when the target storage area corresponds to the parameter values of the plurality of read voltage models in the corresponding relationship between the storage area and the parameter values of the read voltage models, selecting one or more of the parameter values of the plurality of read voltage models corresponding to the target storage area as the target read voltage model parameters according to the target physical position.

The apparatus according to claim 25 or 26, wherein the controller, when determining the target read voltage model corresponding to the target storage area where the target physical location is located according to the target physical location indicated by the location indication information, is specifically configured to:

and determining a target reading voltage model corresponding to the target storage area where the target physical position is located from the corresponding relation between the storage area and the reading voltage model according to the target physical position indicated by the position indication information.

The apparatus of any one of claims 25-27, wherein the read voltage model is used to characterize the correspondence of the identity of the target memory cell to an optimal read voltage.

The apparatus of any one of claims 25-28, wherein the parameter values of the target read voltage model include coefficients of the identity of the target memory cell in the function of the identity of the target memory cell and values of constant terms in the function of the identity of the target memory cell;

when determining the read voltage corresponding to the target physical location according to the identifier of the target storage unit where the target physical location is located, the target read voltage model, and the parameter value of the target read voltage model, the controller is specifically configured to:

determining a function which is satisfied by the read voltage in the target storage area and the identification of the target storage unit in the target storage area according to the target read voltage model and the parameter value of the target read voltage model;

and calculating the reading voltage corresponding to the target physical position according to the identification of the target storage unit where the target physical position is located and a function which is satisfied by the reading voltage in the target storage area and the identification of the target storage unit in the target storage area.

The apparatus of any one of claims 25-29, wherein the controller is further configured to: and when any one of the storage areas meets a preset updating condition, updating the parameter value of the reading voltage model corresponding to the storage area in the corresponding relation between the storage area and the parameter value of the reading voltage model.

The device according to claim 30, wherein the controller, when updating the parameter value of the read voltage model corresponding to the storage region in the correspondence between the parameter values of the storage region and the read voltage model, is specifically configured to:

when the controller is in a system idle time window or meets a preset updating period, determining a first error parameter under any one corresponding reading voltage in each storage area;

and when the first error parameter is larger than or equal to a first threshold value, updating the parameter value of the reading voltage model corresponding to the storage area in the corresponding relation between the storage area and the parameter value of the reading voltage model.

The apparatus of claim 31, wherein the preset update period is related to a usage state of the storage area; alternatively, the preset update period is related to an average service life of a plurality of storage areas included in the nonvolatile storage medium.

The apparatus according to any one of claims 25 to 32, wherein for any one of the storage regions in the correspondence relationship between the storage region and the parameter values of the read voltage model, when the storage region corresponds to the parameter values of the plurality of read voltage models, the storage region is compressed into one read voltage model corresponding to the parameter values of the plurality of read voltage models that satisfy a set condition that the parameter values of the read voltage models are the same or nearly flat.

The apparatus of any one of claims 25-33, wherein the controller is further configured to:

after the data in one storage area is subjected to rewriting or erasing operation, initializing a parameter value of a read voltage model corresponding to the storage area subjected to rewriting or erasing operation to a set value, wherein the set value is a default value or a preset value which is preset and determined according to the read voltage characteristics of the storage area subjected to rewriting or erasing operation.

The apparatus as claimed in claim 34, wherein said controller, when performing a rewrite operation or an erase operation on data in one of said storage areas, is specifically configured to:

an overwrite operation or an erase operation is performed on all data in one of the storage areas.

The apparatus of any one of claims 25-35, wherein the target storage unit is any one of a die, a Plane, a block, a string, a layer, and a page;

or the target storage unit is a storage unit formed by a plurality of die;

or the target storage unit is a storage unit formed by a plurality of planes;

or the target storage unit is a storage unit formed by a plurality of blocks;

or the target storage unit is a storage unit formed by a plurality of strings;

or the target storage unit is a storage unit formed by a plurality of layers;

alternatively, the target storage unit is a storage unit composed of a plurality of pages.