阅读说明：本技术 发射辐射的半导体器件 (Radiation-emitting semiconductor component ) 是由 彼得鲁斯·松德格伦 于 2018-11-12 设计创作，主要内容包括：提供了一种发射辐射的半导体器件(1),所述半导体器件具有半导体层序列(2)和载体(3),在所述载体上设置有半导体层序列,其中,半导体层序列具有设置用于产生辐射的有源区(20)、n型传导的镜区域(21)和p型传导的镜区域(22),所述有源区设置在n型传导的镜区域和p型传导的镜区域之间,并且p型传导的镜区域设置为比有源区更靠近载体。(A radiation-emitting semiconductor component (1) is provided, comprising a semiconductor layer sequence (2) and a carrier (3) on which the semiconductor layer sequence is arranged, wherein the semiconductor layer sequence comprises an active region (20) arranged for generating radiation, an n-conducting mirror region (21) and a p-conducting mirror region (22), wherein the active region is arranged between the n-conducting mirror region and the p-conducting mirror region, and wherein the p-conducting mirror region is arranged closer to the carrier than the active region.)

1. A radiation-emitting semiconductor component (1) having a semiconductor layer sequence (2) and a carrier (3) on which the semiconductor layer sequence is arranged, wherein

The semiconductor layer sequence has an active region (20) provided for generating radiation, an n-conducting mirror region (21) and a p-conducting mirror region (22),

-the active region is arranged between the n-type conducting mirror region and the p-type conducting mirror region, and

-the p-type conducting mirror region is arranged closer to the carrier than the active region.

2. The radiation-emitting semiconductor device according to claim 1, wherein the carrier is doped n-type conduction.

3. The radiation-emitting semiconductor component according to claim 1 or 2, wherein the carrier has silicon-doped GaAs.

4. Radiation-emitting semiconductor component according to one of the preceding claims, wherein a tunnel junction (25) is formed between the p-conducting mirror region and the carrier.

5. The radiation-emitting semiconductor device according to claim 4, wherein a direct electrical connection is present between the tunnel junction and the carrier.

6. Radiation-emitting semiconductor component according to one of the preceding claims, wherein the main dopant of the n-conducting mirror region is different from silicon.

7. Radiation-emitting semiconductor component according to one of the preceding claims, wherein the n-conducting mirror region contains as a dopant at least one of the following materials: te, Sn, Se.

8. Radiation-emitting semiconductor component according to one of the preceding claims, wherein the semiconductor layer sequence is based on a material system In_yAl_xGa_(1-x-y)P_zAs_(1-z)。

9. Radiation-emitting semiconductor component according to one of the preceding claims, wherein the semiconductor component has a back-side contact (52) which is electrically conductively connected to the p-conducting mirror region via the carrier.

10. Radiation-emitting semiconductor component according to one of the preceding claims, wherein the semiconductor component has a front contact (51) which is arranged on a side of the n-conducting mirror region facing away from the active region.

11. The radiation-emitting semiconductor device according to one of the preceding claims, wherein an active region of the semiconductor device is divided into a plurality of sections (201).

12. Radiation-emitting semiconductor device according to one of the preceding claims, wherein the semiconductor device has a current constriction (4).

13. Radiation-emitting semiconductor device according to claim 12, wherein the current constriction has an oxide spacer (41).

14. Radiation-emitting semiconductor device according to claim 12, wherein the current constriction has an implantation region (42).

15. Radiation-emitting semiconductor component according to one of the preceding claims, which is designed as a VCSEL.

16. Radiation-emitting semiconductor component according to one of the preceding claims, wherein the semiconductor layer sequence (2) has a radiation exit area (10) on a side opposite the carrier (3).