阅读说明：本技术 微型发光二极管显示面板 (Micro light-emitting diode display panel ) 是由 罗玉云 孙圣渊 吴志凌 陈彦烨 于 2019-12-04 设计创作，主要内容包括：本发明提供一种微型发光二极管显示面板,包括基板、多个像素结构以及多个波长转换结构。像素结构配置于基板上。每一像素结构包括多个微型发光二极管。微型发光二极管是由相连的磊晶结构的多个不同部分所形成。波长转换结构配置于磊晶结构中,且分别对准至少部分的微型发光二极管。(The invention provides a micro light-emitting diode display panel which comprises a substrate, a plurality of pixel structures and a plurality of wavelength conversion structures. The pixel structure is configured on the substrate. Each pixel structure comprises a plurality of micro light-emitting diodes. The micro light emitting diode is formed by a plurality of different portions of the epitaxial structure being connected. The wavelength conversion structure is configured in the epitaxial structure and is respectively aligned to at least part of the micro light-emitting diodes.)

1. A micro light emitting diode display panel, comprising:

a substrate;

a plurality of pixel structures disposed on the substrate, each pixel structure comprising a plurality of micro light emitting diodes, wherein the plurality of micro light emitting diodes are formed from a plurality of different portions of a connected epitaxial structure; and

and the wavelength conversion structures are configured in the epitaxial structure and are respectively aligned to at least part of the micro light-emitting diodes.

2. The micro light-emitting diode display panel of claim 1, wherein the epitaxial structure comprises a first type semiconductor layer at least partially connected to each other, a plurality of light-emitting layers separated from each other, and a plurality of second type semiconductor layers separated from each other, and the plurality of light-emitting layers are disposed between the first type semiconductor layer and the plurality of second type semiconductor layers.

3. The micro light-emitting diode display panel of claim 2, wherein each wavelength conversion structure has a thickness greater than a thickness of a connecting portion of the first-type semiconductor layer.

4. The micro light emitting diode display panel of claim 2, wherein the micro light emitting diode display panel conforms to a value of 1/B < 50, a value of 1.5/C < 70, and a value of 1.5/B/C < 15, where a is a thickness of the plurality of wavelength converting structures, B is a thickness of a contiguous portion of the first type semiconductor layer, and C is a distance from the contiguous portion of the first type semiconductor layer to an end of the plurality of second type semiconductor layers away from the plurality of wavelength converting structures in a direction perpendicular to the substrate.

5. The micro light-emitting diode display panel of claim 2, wherein the thickness of the disconnected portion of the first type semiconductor layer of the epitaxial structure is greater than the thickness of the connected portion.

6. The micro light-emitting diode display panel of claim 5, wherein the ratio of the thickness of the disconnected portion to the thickness of the wavelength conversion structure is between 0.9 and 1.1.

7. The micro light-emitting diode display panel of claim 2, further comprising a common electrode layer disposed on the plurality of pixel structures and electrically connected to the first type semiconductor layer.

8. The micro LED display panel of claim 1, wherein an end of a portion of the epitaxial structure distal from the substrate is coplanar with an end of the plurality of wavelength converting structures distal from the substrate.

9. The micro light-emitting diode display panel of claim 1, further comprising a photoresist barrier layer disposed between the epitaxial structure and the plurality of wavelength converting structures.

10. The micro led display panel of claim 9, wherein the photoresist barrier is conductive.

11. The micro light-emitting diode display panel of claim 1, wherein the pitch of the plurality of micro light-emitting diodes is smaller than the width of each micro light-emitting diode.

12. The micro led display panel of claim 11, wherein the ratio of the pitch of the plurality of micro leds to the width of each micro led is in the range of 0.1 to 0.9.

13. The micro led display panel of claim 11, wherein the pitch of the plurality of micro leds is 10 μm or less.

14. The micro light-emitting diode display panel of claim 1, further comprising a spacer layer disposed on sidewalls of the micro light-emitting diodes and on a connecting portion of the epitaxial structure between the micro light-emitting diodes.

15. The micro led display panel of claim 14, wherein the spacer layer comprises a light absorbing material, a reflective material, a scattering material, or a combination thereof.

16. The micro light-emitting diode display panel of claim 1, wherein a portion of the epitaxial structure is located between adjacent wavelength converting structures.

Technical Field

The present disclosure relates to display panels, and particularly to a micro light emitting diode display panel.

Background

In the micro led display, a plurality of vertical micro leds may be arranged on a micro led display panel in an array arrangement. Currently, a transparent conductive layer (such as ito) is commonly used as a common electrode to electrically connect a plurality of vertical micro-leds, so that the micro-led display can operate. However, as the size of the display is enlarged, the thickness of the indium tin oxide as the common electrode also needs to be increased to maintain lateral conductivity and low power consumption. However, as the thickness of the common electrode increases, the light extraction rate of the display decreases, and a light leakage problem is caused. Moreover, the color conversion structure configured on the micro led display panel for color conversion may cause surface unevenness, and further, the yield of the subsequent common electrode fabrication is low.

Disclosure of Invention

The invention provides a micro light-emitting diode display panel which can increase the light-emitting rate and reduce the problem of light leakage.

The micro light-emitting diode display panel comprises a substrate, a plurality of pixel structures and a plurality of wavelength conversion structures. The pixel structure is configured on the substrate. Each pixel structure comprises a plurality of micro light-emitting diodes. The micro light emitting diode is formed by a plurality of different portions of the epitaxial structure being connected. The wavelength conversion structure is configured in the epitaxial structure and is respectively aligned to at least part of the micro light-emitting diodes.

In an embodiment of the invention, the epitaxial structure includes a first type semiconductor layer, a plurality of light emitting layers and a plurality of second type semiconductor layers, which are at least partially connected. The light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer.

In an embodiment of the invention, a thickness of each of the wavelength converting structures is greater than a thickness of the connecting portion of the first type semiconductor layer.

In an embodiment of the invention, the above-mentioned micro led display panel satisfies 1 ≦ a/B ≦ 50, 1.5 ≦ a/C ≦ 70, and 1.5 ≦ B/C ≦ 15. A is the thickness of the wavelength conversion structure, B is the thickness of the connecting part of the first type semiconductor layer, and C is the distance from the connecting part of the first type semiconductor layer to one end of the second type semiconductor layer far away from the wavelength conversion structure in the direction vertical to the substrate.

In an embodiment of the invention, a thickness of the disconnected portion of the first type semiconductor layer of the epitaxial structure is greater than a thickness of the connected portion.

In an embodiment of the invention, a ratio of the thickness of the unconnected portion to the thickness of the wavelength conversion structure is between 0.9 and 1.1.

In an embodiment of the invention, the micro led display panel further includes a common electrode layer. The common electrode layer is disposed on the pixel structure and electrically connected to the first type semiconductor layer.

In an embodiment of the invention, an end of the epitaxial structure away from the substrate is coplanar with an end of the wavelength conversion structure away from the substrate.

In an embodiment of the invention, the micro led display panel further includes a photoresist barrier layer. The photoresist barrier layer is disposed between the epitaxial structure and the wavelength conversion structure.

In an embodiment of the invention, the photoresist barrier layer has conductivity.

In an embodiment of the invention, a pitch of the micro light emitting diodes is smaller than a width of each micro light emitting diode.

In an embodiment of the invention, a ratio of the pitch of the micro light emitting diodes to the width of each micro light emitting diode is in a range of 0.1 to 0.9.

In an embodiment of the invention, a pitch of the micro light emitting diodes is less than or equal to 10 micrometers.

In an embodiment of the invention, the micro led display panel further includes a separation layer. The separating layer is arranged on the side wall of the micro light-emitting diode and the connecting part of the epitaxial structure between the micro light-emitting diodes.

In an embodiment of the invention, the spacer layer includes an absorption material, a reflection material, a scattering material, or a combination thereof.

In an embodiment of the invention, the part of the epitaxial structure is located between adjacent wavelength converting structures.

In view of the above, in the micro light emitting diode display panel according to the embodiment of the invention, the connected epitaxial structures can be used as a common electrode to electrically connect the plurality of micro light emitting diodes. Then, by disposing the wavelength conversion structure in the epitaxial structure, the thickness of the epitaxial structure in the light-emitting region and below the wavelength conversion structure can be reduced, and the unevenness caused by disposing the wavelength conversion structure on the surface of the epitaxial structure can also be reduced. Therefore, compared to the conventional micro led display panel, the micro led display panel according to the embodiment of the invention uses the connected partial epitaxial structures as a common electrode to transmit current, and reduces power consumption by retaining the unconnected partial epitaxial structures with a thicker thickness. In addition, the epitaxial structure with a reduced thickness can also enable the micro light emitting diode display panel of the embodiment of the invention to have the effects of increasing the light extraction rate and reducing the light leakage problem.

Drawings

FIG. 1A is a schematic top view of a micro light emitting diode display panel according to an embodiment of the invention;

FIG. 1B is a schematic cross-sectional view of the micro LED display panel of FIG. 1A along section line I-I';

FIG. 2 is a schematic cross-sectional view of a micro LED display panel according to another embodiment of the present invention;

FIG. 3 is a schematic cross-sectional view of a micro LED display panel according to another embodiment of the present invention;

fig. 4 is a schematic cross-sectional view illustrating a micro led display panel according to another embodiment of the invention.

Description of the reference numerals

10. 10a, 10b, 10 c: micro light-emitting diode display panel

100 a: non-display area

100 b: display area

110: substrate

111: substrate

112: circuit layer

113. 113 a: connecting pad

112 a: first drive circuit

112 b: second drive circuit

120. 120 c: pixel structure

121. 122, 123: micro light-emitting diode

121a, 122a, 123 a: side wall

124: epitaxial structure

1241: first type semiconductor layer

1241 a: connecting part

1241b, 1241 d: unconnected parts

1241b 1: terminal end

1241 c: platform part

1242: luminescent layer

1243: second type semiconductor layer

1243 a: terminal end

130. 131, 132: wavelength conversion structure

130a, 131 a: terminal end

140: photoresist barrier

150: common electrode layer

160. 160 a: separation layer

170: protective layer

A. B, D: thickness of

C: distance between two adjacent plates

W1: distance between each other

W2: width of

Detailed Description

Fig. 1A is a schematic top view illustrating a micro led display panel according to an embodiment of the invention. FIG. 1B is a cross-sectional view of the micro LED display panel of FIG. 1A along section line I-I'.

Referring to fig. 1A and fig. 1B, the micro light emitting diode display panel 10 of the present embodiment includes a substrate 110, a plurality of pixel structures 120, and a plurality of wavelength conversion structures 130 and 131. The substrate 110 includes a substrate 111 and a circuit layer 112 disposed on the substrate 111. The circuit layer 112 includes a first driving circuit 112a, a second driving circuit 112b, and a plurality of switching elements (not shown). The first driving circuit 112a and the second driving circuit 112b are located in the non-display area 100a of the micro led display panel 10. The substrate 111 is, for example, a plastic substrate, a glass substrate, or a sapphire substrate, and may have a fixed property and a flat surface, but not limited thereto.

In the present embodiment, the pixel structures 120 are disposed on the substrate 110 in an array arrangement. The pixel structure 120 is located in the display area 100b of the micro led display panel 10. Each pixel structure 120 includes a light-emitting area 120a and a non-light-emitting area 120 b. Each pixel structure 120 includes a plurality of micro light emitting diodes 121, 122, 123 disposed in the light-emitting area 120 a. In the present embodiment, the distance W1 between the adjacent micro light emitting diodes 121, 122, 123 is, for example, less than or equal to 10 microns, and the width W2 of the micro light emitting diodes 121, 122, 123 is, for example, less than or equal to 10 microns, but not limited thereto. In some embodiments, the spacing W1 between adjacent micro leds 121, 122, 123 is, for example, less than or equal to 5 microns, and the width W2 of the micro leds 121, 122, 123 is, for example, less than or equal to 5 microns, so that the micro led display panel 10 has a higher resolution.

Further, in the present embodiment, the pitch W1 between the adjacent micro light emitting diodes 121, 122, 123 is, for example, smaller than the width W2 of each of the micro light emitting diodes 121, 122, 123, so that the micro light emitting diode display panel 10 has a higher resolution, but not limited thereto. In some embodiments, the ratio of the spacing W1 between adjacent micro leds 121, 122, 123 to the width W2 of each micro led 121, 122, 123 is, for example, in the range of 0.1 to 0.9, but not limited thereto.

In the present embodiment, the micro light emitting diodes 121, 122, 123 are, for example, vertical micro light emitting diodes, but not limited thereto. Specifically, the micro light emitting diodes 121, 122, 123 of the present embodiment are respectively disposed on the pads 113 on the substrate 110. The micro light emitting diodes 121, 122, 123 and the substrate 110 are respectively located at two opposite sides of the pad 113. The micro-leds 121, 122, 123 are formed from different parts of a contiguous epitaxial structure 124. The epitaxial structure 124 includes a first type semiconductor layer 1241, a plurality of light emitting layers 1242 and a plurality of second type semiconductor layers 1243. The light emitting layer 1242 is disposed between the first type semiconductor layer 1241 and the second type semiconductor layer 1243.

More specifically, in the present embodiment, the first-type semiconductor layer 1241 includes a connected portion 1241a, an unconnected portion 1241b, and a mesa portion (mesa portion)1241 c. The unconnected portion 1241b is disposed on the connected portion 1241 a. The unconnected portion 1241b and the land portion 1241c are located on opposite sides of the connected portion 1241a, respectively. The connection portion 1241a and the light emitting layer 1242 are respectively located at opposite sides of the land portion 1241 c. The unconnected portion 1241b corresponds to the micro light emitting diode 123, but does not correspond to the micro light emitting diodes 121, 122. That is, the orthographic projection of the unconnected portion 1241b on the substrate 110 overlaps the orthographic projection of the micro light emitting diode 123 on the substrate 110, but does not overlap the orthographic projection of the micro light emitting diodes 121, 122 on the substrate 110. In some embodiments, the unconnected portion 1241b is disposed in a portion of the light-emitting region 120a of the pixel structure 120. In this embodiment, the material of the first type semiconductor layer 1241 is, for example, N-type doped GaN, but not limited thereto.

In the embodiment, the second type semiconductor layer 1243 and the substrate 110 are respectively located at two opposite sides of the pad 113. The second type semiconductor layer 1243 may contact the pad 113 on the substrate 110. The second type semiconductor layer 1243 may be electrically connected to the circuit layer 112 of the substrate 110 through the pad 113 disposed on the substrate 110. That is, the micro light emitting diodes 121, 122, 123 can be electrically connected to the circuit layer 112 of the substrate 110 through the corresponding pads 113, respectively.

In the present embodiment, the wavelength conversion structures 130 and 131 are disposed in the epitaxial structure 124 and located on the micro light emitting diodes 121 and 122. The wavelength conversion structures 130 and 131 are disposed in a portion of the light-exiting region 120a of the pixel structure 120. Specifically, the wavelength converting structure 130 is aligned with the micro light emitting diode 121 configuration, and the wavelength converting structure 131 is aligned with the micro light emitting diode 122 configuration. The wavelength conversion structure 130 and the substrate 110 are respectively located at two opposite sides of the micro light emitting diode 121, and the wavelength conversion structure 131 and the substrate 110 are respectively located at two opposite sides of the micro light emitting diode 122. That is, the orthographic projection of the wavelength converting structure 130 on the substrate 110 is overlapped with the orthographic projection of the micro light emitting diode 121 on the substrate 110, and the orthographic projection of the wavelength converting structure 131 on the substrate 110 is overlapped with the orthographic projection of the micro light emitting diode 122 on the substrate 110. In some embodiments, the wavelength converting structures 130, 131 contact the connected portion 1241a of the first-type semiconductor layer 1241.

In addition, in the present embodiment, the disconnected portion 1241b of the first type semiconductor layer 1241 is located between the wavelength converting structure 131 of the pixel structure 120 and the wavelength converting structure 130 of another pixel structure 120 adjacent thereto. That is, a portion of the epitaxial structure 124 (i.e., the disconnected portion 1241b of the first-type semiconductor layer 1241) may be located between the adjacent wavelength converting structure 130 and the wavelength converting structure 131. In some embodiments, an end 1241b1 of the portion of the epitaxial structure 124 (i.e., the disconnected portion 1241b of the first-type semiconductor layer 1241) away from the substrate 110 is coplanar with the ends 130a, 131a of the wavelength converting structures 130, 131 away from the substrate 110.

In addition, in the embodiment, the thickness a of the wavelength conversion structures 130 and 131 is, for example, 1 to 14 micrometers, the thickness B of the connecting portion 1241a of the first-type semiconductor layer 1241 is, for example, 0.3 to 3 micrometers, the distance C from the connecting portion 1241a of the first-type semiconductor layer 1241 to the end 1243a of the second-type semiconductor layer 1243, which is away from the wavelength conversion structures 130 and 131, in the direction perpendicular to the substrate 110 is, for example, 0.2 to 2 micrometers, and the thickness D of the disconnected portion 1241B of the first-type semiconductor layer 1241 is, for example, 3.0 to 14 micrometers, but not limited thereto.

In some embodiments, the ratio of the thickness a of the wavelength converting structures 130 and 131 to the thickness B of the connecting portion 1241a of the first-type semiconductor layer 1241 is, for example, 1 ≦ a/B ≦ 50, where less than 1 may result in poor wavelength conversion efficiency, and more than 50 may result in too thick thickness affecting light extraction efficiency, but not limited thereto. In some embodiments, a ratio of the thickness a of the wavelength converting structures 130 and 131 to a distance C from a connecting portion 1241a of the first-type semiconductor layer 1241 to an end 1243a of the second-type semiconductor layer 1243 is, for example, 1.5 ≦ a/C ≦ 70, where less than 1.5 may cause poor wavelength conversion efficiency, and more than 70 may cause too thick thickness to affect light extraction efficiency, but not limited thereto. In some embodiments, a ratio of a thickness B of the connecting portion 1241a of the first type semiconductor layer 1241 to a distance C from the connecting portion 1241a of the first type semiconductor layer 1241 to the end 1243a of the second type semiconductor layer 1243 is, for example, 1.5 ≦ B/C ≦ 15, where less than 1.5 may reduce a process yield of the connecting portion 1241a, and more than 15 may cause a too thick thickness to affect a light emitting efficiency, but not limited thereto.

In addition, in the present embodiment, the thickness D of the disconnected portion 1241B of the first type semiconductor layer 1241 of the epitaxial structure 124 is, for example, greater than the thickness B of the connected portion 1241a of the first type semiconductor layer 1241. In some embodiments, the ratio of the thickness B of the connecting portion 1241a of the first type semiconductor layer 1241 of the epitaxial structure 124 to the thickness D of the disconnected portion 1241B of the first type semiconductor layer 1241 is, for example, between 1 and 50, wherein less than 1 may result in poor wavelength conversion efficiency, and more than 50 may result in too thick thickness affecting light extraction efficiency, but not limited thereto. In the present embodiment, the ratio of the thickness D of the disconnected portion 1241b of the first type semiconductor layer 1241 to the thickness a of the wavelength converting structures 130 and 131 is, for example, between 0.9 and 1.1, but not limited thereto. In some embodiments, when the thickness D of the disconnected portion 1241b of the first type semiconductor layer 1241 is equal to the thickness a of the wavelength converting structures 130 and 131, the micro led display panel 10 may have better light conversion quality and consistent light extraction efficiency.

In the present embodiment, the micro light emitting diodes 121, 122, 123 may be micro light emitting diodes of the same color, such as blue light micro light emitting diodes or ultraviolet light micro light emitting diodes, but not limited thereto. The wavelength conversion structures 130, 131 may have quantum dots, for example, but not limited thereto. The wavelength converting structures 130, 131 may, for example, have a plurality of different converted light colors. In some embodiments, the wavelength converting structures 130, 131 may have a converted light color of red, green or blue, for example, but not limited thereto. For example, when the micro light emitting diodes 121, 122, 123 are blue micro light emitting diodes, the micro light emitting diode 121 can display red light through the corresponding wavelength converting structure 130 with red converted light color, the micro light emitting diode 122 can display green light through the corresponding wavelength converting structure 130 with green converted light color, and the blue light emitted by the micro light emitting diode 123 can display blue light through the disconnected portion 1241b of the corresponding first type semiconductor layer 1241, so as to achieve a full color display pixel effect.

Although the first-type semiconductor layer 1241 of the epitaxial structure 124 includes the disconnected portion 1241b in the embodiment, the invention is not limited thereto. That is, in other embodiments, the disconnected portion 1241b of the first-type semiconductor layer 1241 may be replaced by a scattering material, a wavelength conversion structure, or other suitable materials, as long as the replaced scattering material, wavelength conversion structure, or other suitable materials do not affect the light output of the micro light emitting diode 123.

In the present embodiment, the micro led display panel 10 further includes a photoresist barrier layer 140. The photoresist barrier 140 is disposed between the epitaxial structure 124 and the wavelength conversion structure 130. The photoresist barrier layer 140 is disposed in the non-light-emitting region 120b of the pixel structure 120. Specifically, the photoresist barriers 140 are located on the left and right sides of the wavelength converting structures 130 and 131, and located on the left and right sides of the disconnected portion 1241b of the first-type semiconductor layer 1241. The photoresist barrier 140 is positioned on the connected portion 1241a of the first-type semiconductor layer 1241. The photoresist barrier layer 140 contacts the connected portion 1241a of the first-type semiconductor layer 1241. The photoresist blocking layer 140 is disposed between the adjacent wavelength converting structures 130 and 131, and the photoresist blocking layer 140 is disposed between the wavelength converting structures 130 and 131 and the disconnected portion 1241b of the first-type semiconductor layer 1241. In some embodiments, the orthographic projection of the photoresist barrier layer 140 on the substrate 110 does not overlap the orthographic projection of the micro light emitting diodes 121, 122, 123 on the substrate 110. In addition, in the present embodiment, the photoresist barrier layer 140 may have reflective, scattering or light-absorbing properties to prevent the light emitted by the micro light-emitting diodes 121, 122, 123 from interfering with each other and reduce the problem of light leakage. In some embodiments, the photoresist barrier layer 140 may have conductivity such that the photoresist barrier layer 140 may be electrically connected with the connection portion 1241a of the first-type semiconductor layer 1241, thereby increasing lateral conductivity and reducing power consumption.

In the present embodiment, the micro led display panel 10 further includes a common electrode layer 150 having a light-transmitting property. The common electrode layer 150 is disposed on the pixel structure 120 and electrically connected to the first type semiconductor layer 1241. Specifically, the common electrode layer 150 covers the wavelength conversion structures 130 and 131, the photoresist barrier layer 140, and the micro light emitting diodes 121, 122, and 123. The common electrode layer 150 may contact the wavelength conversion structures 130 and 131, the photoresist barrier layer 140, and the disconnected portion 1241b of the first-type semiconductor layer 1241. Therefore, the common electrode layer 150 can be electrically connected to the micro light emitting diodes 121, 122, 123 through the disconnected portion 1241b and the connected portion 1241a of the first type semiconductor layer 1241. In some embodiments, the common electrode layer 150 may also be electrically connected to the micro light emitting diodes 121, 122, 123 through the conductive photoresist barrier layer 140 and the connecting portion 1241a of the first type semiconductor layer 1241. In addition, in the embodiment, the common electrode layer 150 can be electrically connected to the circuit layer 112 of the substrate 110 through the pads 113a on the substrate 110.

In this embodiment, the micro led display panel 10 further includes a separation layer 160. The separation layer 160 is disposed on the sidewalls 121a, 122a, 123a of the micro light emitting diodes 121, 122, 123 and the connecting portion 1241a of the epitaxial structure 124 between the micro light emitting diodes 121, 122, 123. In the present embodiment, the material of the spacer layer 160 includes, for example, but not limited to, an absorption material, a reflection material, a scattering material, or a combination thereof. The separation layer 160 can prevent the light emitted from the micro light emitting diodes 121, 122, 123 from interfering with each other and reduce light leakage. In some embodiments, the separation layer 160 can be, for example, a Distributed Bragg Reflector (DBR), but is not limited thereto.

In the present embodiment, the micro led display panel 10 further includes a protection layer 170 disposed on the substrate 110. The passivation layer 170 is disposed between the common electrode layer 150 and the pixel structures 120 and between the adjacent pixel structures 120, so as to protect the micro led display panel 10 from moisture or oxidation.

It should be noted that in the micro light emitting diode display panel 10 of the present embodiment, the connected first type semiconductor layer 1241 can be used as a common electrode to electrically connect the plurality of micro light emitting diodes 121, 122, 123. Then, by disposing the wavelength conversion structures 130 and 131 in the first type semiconductor layer 1241, the thickness of the first type semiconductor layer 1241 in the light exit region 120b can be reduced, and unevenness caused by disposing the wavelength conversion structures 130 and 131 on the surface of the epitaxial structure 124 can also be reduced. Therefore, compared to the conventional micro led display panel, the micro led display panel 10 of the present invention uses the thin-thickness connected part of the epitaxial structure 124 (i.e. the connected part 1241a of the first type semiconductor layer 1241) as a common electrode to transmit current, and retains the thick-thickness disconnected part of the epitaxial structure 124 (i.e. the disconnected part 1241b of the first type semiconductor layer 1241) to reduce power consumption. In addition, the first type semiconductor layer 1241 with a reduced thickness also enables the micro led display panel 10 of the present invention to have the effects of increasing the light extraction rate and reducing the light leakage problem.

Other examples will be listed below for illustration. It should be noted that the following embodiments follow the reference numerals and parts of the contents of the foregoing embodiments, wherein the same reference numerals are used to indicate the same or similar elements, and the description of the same technical contents is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.

Fig. 2 is a schematic cross-sectional view of a micro led display panel according to another embodiment of the invention. For clarity of illustration and description, the common electrode layer 150 and the protective layer 170 are omitted from fig. 2. Referring to fig. 1B and fig. 2, the micro led display panel 10a of the present embodiment is similar to the micro led display panel 10 of fig. 1B, but the main difference between the two is: the micro led display panel 10a of the present embodiment further includes a disconnected portion 1241d of the first type semiconductor layer 1241.

Referring to fig. 2, the disconnected portion 1241d of the first type semiconductor layer 1241 is disposed in the non-light-emitting area 120b of the pixel structure 120, such that the photoresist blocking layers 140a and 140b are respectively disposed at two opposite sides of the disconnected portion 1241 d. Specifically, the photoresist barrier 140a is located between the wavelength converting structure 130 and the unconnected portion 1241d, and the photoresist barrier 140b is located between the wavelength converting structure 131 and the unconnected portion 1241 d. The orthographic projection of the photoresist barrier layer 140a on the substrate 110 does not overlap the orthographic projection of the micro light emitting diodes 121, 122, 123 on the substrate 110. In the embodiment, the disconnected portion 1241d may contact the common electrode layer 150 (not shown), so that the common electrode layer 150 may be electrically connected to the micro light emitting diodes 121, 122, 123 through the disconnected portion 1241b, the disconnected portion 1241d and the connected portion 1241a of the first type semiconductor layer 1241. Therefore, the power consumption can be reduced, higher current can be transmitted, and higher brightness can be provided.

Fig. 3 is a schematic cross-sectional view of a micro led display panel according to another embodiment of the invention. For clarity of illustration and description, the common electrode layer 150 and the protective layer 170 are omitted from fig. 3. Referring to fig. 1B and fig. 3, the micro led display panel 10B of the present embodiment is similar to the micro led display panel 10 of fig. 1B, but the main difference between the two is: in the micro led display panel 10b of the present embodiment, the wavelength converting structure 132 is used to replace the disconnected portion 1241b of the first type semiconductor layer 1241 in the micro led display panel 10.

Referring to fig. 3, the wavelength conversion structure 132 is disposed in the light exit area 120a of the pixel structure 120, and the wavelength conversion structure 132 is aligned with the micro light emitting diode 123. Therefore, when the micro light emitting diodes 121, 122, 123 are ultraviolet micro light emitting diodes, the micro light emitting diode 121 can display red light through the corresponding wavelength converting structure 130 with the red converted light color, the micro light emitting diode 122 can display green light through the corresponding wavelength converting structure 130 with the green converted light color, and the micro light emitting diode 123 can display blue light through the corresponding wavelength converting structure 132 with the blue converted light color, so as to achieve the pixel effect of full color display.

Fig. 4 is a schematic cross-sectional view illustrating a micro led display panel according to another embodiment of the invention. Referring to fig. 1B and fig. 4, the micro led display panel 10c of the present embodiment is similar to the micro led display panel 10 of fig. 1B, but the main difference between the two is: in the micro led display panel 10c of the present embodiment, the pixel structures 120c are connected to each other. The pixel structure 120c is connected by the connecting portion 1241a of the first type semiconductor layer 1241 in the epitaxial structure 124, so that the micro light emitting diodes 121, 122, 123 are not shifted during the transfer process of the micro light emitting diode display panel 10c, and the transfer frequency is reduced to increase the yield of the manufacturing. Specifically, the pixel structures in the micro led display panel may be all connected, or some of the pixel structures may be connected according to a transfer design, but not limited thereto.

In summary, in the micro light emitting diode display panel according to the embodiments of the invention, the connected first type semiconductor layer may be used as a common electrode to electrically connect the plurality of micro light emitting diodes. Then, by disposing the wavelength conversion structure in the first type semiconductor layer, the thickness of the first type semiconductor layer in the light emitting region and below the wavelength conversion structure can be reduced, and unevenness caused by disposing the wavelength conversion structure on the surface of the epitaxial structure can also be reduced. Therefore, compared to the conventional micro led display panel, the micro led display panel according to the embodiment of the invention uses the connected partial epitaxial structures as a common electrode to transmit current, and retains the disconnected partial epitaxial structures to reduce power consumption. In addition, the first type semiconductor layer with a reduced thickness can also enable the micro light emitting diode display panel of the embodiment of the invention to have the effects of increasing the light extraction rate and reducing the light leakage problem.