阅读说明：本技术 光源装置的制造方法 (Method for manufacturing light source device ) 是由 中林拓也 于 2019-09-11 设计创作，主要内容包括：本发明提供一种光源装置的制造方法,能够抑制发光装置相对于支承基板倾斜而接合。该光源装置的制造方法包括：准备发光装置的工序,该发光装置具有：具有正面、背面、上表面、下表面以及在背面与下表面开口的多个凹陷部的基材、具有配置在正面的第一配线以及配置在多个凹陷部的第二配线的基板、以及载置在第一配线上的发光元件；准备支承基板的工序,该支承基板具有：在支承基材的上表面包括接合区域的第一配线图案、以及包围接合区域的绝缘区域；以使绝缘区域上的焊料的体积大于接合区域上的焊料的体积的方式配置焊料的工序；在俯视下以焊料与下表面附近的第二配线分离的方式在支承基板载置发光装置的工序；接合第二配线与接合区域的工序。(The invention provides a method for manufacturing a light source device, which can prevent a light emitting device from inclining relative to a supporting substrate and being jointed. The manufacturing method of the light source device comprises the following steps: a step of preparing a light-emitting device, the light-emitting device including: a substrate having a front surface, a back surface, an upper surface, a lower surface, and a plurality of recesses that are open at the back surface and the lower surface, a substrate having a first wiring disposed at the front surface and a second wiring disposed at the plurality of recesses, and a light-emitting element mounted on the first wiring; a step of preparing a support substrate having: a first wiring pattern including a bonding region and an insulating region surrounding the bonding region on an upper surface of the support substrate; disposing solder so that the volume of the solder on the insulating region is larger than the volume of the solder on the bonding region; placing the light emitting device on the supporting substrate so that the solder is separated from the second wiring in the vicinity of the lower surface in a plan view; and bonding the second wiring to the bonding region.)

1. A method of manufacturing a light source device, comprising:

a step of preparing a light-emitting device, the light-emitting device including: a base material having a front surface extending in a longitudinal direction and a short-side direction orthogonal to the longitudinal direction, a back surface located on an opposite side of the front surface, an upper surface adjacent to the front surface and orthogonal to the front surface, a lower surface located on an opposite side of the upper surface, and a plurality of recessed portions opened in the back surface and the lower surface; a substrate having a first wiring disposed on the front surface and a second wiring electrically connected to the first wiring and disposed in each of the plurality of recesses; at least one light emitting element electrically connected to the first wiring and mounted on the first wiring;

a step of preparing a support substrate having: a support substrate, a first wiring pattern including a bonding region on an upper surface of the support substrate, and an insulating region surrounding the bonding region;

disposing solder on the bonding region and the insulating region such that a volume of the solder on the insulating region is larger than a volume of the solder on the bonding region;

mounting the light emitting device on the support substrate so that the solder is separated from the second wiring located near the lower surface in a plan view;

and a bonding step of heating and melting the solder to bond the second wiring of the light-emitting device to the bonding region of the support substrate.

2. The method for manufacturing a light source device according to claim 1,

in the step of disposing the solder, a maximum width of the solder positioned on the insulating region is made wider than a maximum width of the solder positioned on the bonding region in a plan view.

3. The method for manufacturing a light source device according to claim 1 or 2,

the substrate and the support substrate are bonded with a bonding resin.

4. The method for manufacturing a light source device according to claim 3,

in the step of bonding the second wiring of the light emitting device to the bonding portion of the support substrate, the adhesive resin is cured.

5. The method for manufacturing a light source device according to claim 3 or 4,

the adhesive resin is located between the plurality of recessed portions.

6. The method for manufacturing a light source device according to any one of claims 1 to 5,

the maximum width of the recessed portion is narrower than the maximum width of the joining region in a plan view.

Technical Field

The present invention relates to a method for manufacturing a light source device.

Background

A light emitting diode having: the electronic device includes a substrate including a base portion provided with an opening, a mounting portion disposed on the base portion so as to close the opening, and an electrode exposed from the opening, and the electrode and the main board are electrically joined by solder (see, for example, patent document 1).

Disclosure of Invention

Technical problem to be solved by the invention

The invention aims to provide a method for manufacturing a light source device, which can prevent a light-emitting device from inclining relative to a main board (a supporting substrate) and being jointed.

Technical solution for solving technical problem

A method for manufacturing a light source device according to an embodiment of the present invention includes: a step of preparing a light-emitting device, the light-emitting device including: a base material having a front surface extending in a longitudinal direction and a short-side direction orthogonal to the longitudinal direction, a back surface located on an opposite side of the front surface, an upper surface adjacent to the front surface and orthogonal to the front surface, a lower surface located on an opposite side of the upper surface, and a plurality of recessed portions opened in the back surface and the lower surface; a substrate having a first wiring disposed on the front surface and a second wiring electrically connected to the first wiring and disposed in each of the plurality of recesses; at least one light emitting element electrically connected to the first wiring and mounted on the first wiring; a step of preparing a support substrate having: a support substrate, a first wiring pattern including a bonding region on an upper surface of the support substrate, and an insulating region surrounding the bonding region; disposing solder on the bonding region and the insulating region such that a volume of the solder on the insulating region is larger than a volume of the solder on the bonding region; mounting the light emitting device on the support substrate so that the solder is separated from the second wiring located near the lower surface in a plan view; and a bonding step of heating and melting the solder to bond the second wiring of the light-emitting device to the bonding region of the support substrate.

ADVANTAGEOUS EFFECTS OF INVENTION

According to the method of manufacturing a light source device of the present invention, it is possible to provide a light source device in which a light emitting device can be prevented from being bonded to a support substrate while being tilted.

Drawings

Fig. 1A is a schematic perspective view of a light-emitting device according to a first embodiment.

Fig. 1B is a schematic perspective view of the light-emitting device of the first embodiment.

Fig. 2A is a schematic front view of the light-emitting device of the first embodiment.

FIG. 2B is a schematic sectional view taken along line I-I of FIG. 2A.

FIG. 2C is a schematic sectional view taken along line II-II of FIG. 2A.

Fig. 3 is a schematic bottom view of the light-emitting device according to the first embodiment.

Fig. 4A is a schematic rear view of the light-emitting device according to the first embodiment.

Fig. 4B is a schematic rear view of a modification of the light-emitting device according to the first embodiment.

Fig. 5 is a schematic front view of the substrate according to the first embodiment.

Fig. 6 is a schematic side view of the light-emitting device of the first embodiment.

Fig. 7A is a schematic top view of the support substrate according to the first embodiment.

Fig. 7B is a schematic sectional view taken along line III-III of fig. 7A.

Fig. 8A is a schematic top view of a modification of the support substrate of the first embodiment.

Fig. 8B is a schematic cross-sectional view taken along line IV-IV of fig. 8A.

Fig. 9A is a schematic top view illustrating a method of manufacturing the light source device according to the first embodiment.

Fig. 9B is a schematic sectional view taken along line V-V of fig. 9A.

Fig. 9C is a schematic cross-sectional view illustrating a manufacturing method of a modification of the light source device of the first embodiment.

Fig. 9D is a schematic top view illustrating a modification of the method for manufacturing the light source device according to the first embodiment.

Fig. 9E is a schematic top view illustrating a modification of the method for manufacturing the light source device according to the first embodiment.

Fig. 9F is a schematic top view illustrating a modification of the method for manufacturing the light source device according to the first embodiment.

Fig. 10A is a schematic top view illustrating a method of manufacturing the light source device according to the first embodiment.

Fig. 10B is a schematic sectional view taken along line VI-VI of fig. 10A.

Fig. 10C is a schematic cross-sectional view illustrating a manufacturing method of a modification of the light source device of the first embodiment.

Fig. 11 is a schematic sectional view illustrating a method of manufacturing the light source device according to the first embodiment.

Fig. 12A is a schematic perspective view of a light-emitting device according to a second embodiment.

Fig. 12B is a schematic perspective view of the light-emitting device of the second embodiment.

Fig. 13A is a schematic front view of the light-emitting device of the second embodiment.

Fig. 13B is a schematic sectional view taken along line VII-VII in fig. 13A.

Fig. 14 is a schematic cross-sectional view of a modification of the light-emitting device of the second embodiment.

Description of the reference numerals

1000A light source device; 1000, 1001, 2000, 2001 light emitting devices; 5000, 5001 supporting a substrate; 10a substrate; 11 a substrate; 12a first wiring; 13a second wiring; 14 a third wiring; 15 through holes; 151 fourth wiring; 152 a filler member; 16 a recessed portion; 18 an insulating film; 20a light emitting element; 30a light-transmissive member; 40 a reflective member; 50 a light guide member; 60 a conductive adhesive member.

Detailed Description

Embodiments of the present invention will be described below with reference to the drawings as appropriate. However, the light emitting device described below is used to embody the technical idea of the present invention, and the present invention is not limited to the following unless specifically stated. Note that the contents described in one embodiment can be applied to other embodiments and modifications. In addition, the sizes, positional relationships, and the like of the components shown in the drawings are sometimes exaggerated for clarity of the description.

(first embodiment)

A method for manufacturing a light source device according to a first embodiment of the present invention will be described with reference to fig. 1A to 11.

The method for manufacturing a light-emitting device of the first embodiment includes:

(1) a step of preparing a light-emitting device, the light-emitting device including: a base material having a front surface extending in a long side direction and a short side direction orthogonal to the long side direction, a back surface located on an opposite side of the front surface, an upper surface adjacent to the front surface and orthogonal to the front surface, a lower surface located on an opposite side of the upper surface, and a plurality of recesses opened in the back surface and the lower surface, a substrate having a first wiring disposed on the front surface and a second wiring electrically connected to the first wiring and disposed in each of the plurality of recesses, and at least one light emitting element electrically connected to the first wiring and mounted on the first wiring;

(2) a step of preparing a support substrate having: a support substrate, a wiring pattern including a bonding region on an upper surface of the support substrate, and an insulating region surrounding the bonding region;

(3) a step of disposing solder on the bonding region and the insulating region so that the volume of the solder on the insulating region is larger than the volume of the solder on the bonding region;

(4) a step of mounting the light-emitting device on a support substrate, the solder being separated from the second wiring located near the lower surface in a plan view;

(5) and a bonding step of heating and melting the solder to bond the second wiring of the light-emitting device to the bonding region of the support substrate.

According to the method for manufacturing a light source device of the embodiment configured as described above, it is possible to suppress formation of the solder after heating and melting between the lower surface of the base material and the upper surface of the support substrate. This can prevent the light-emitting device from being bonded to the support substrate while being tilted.

(step of preparing light-emitting device)

As shown in fig. 2B, a light-emitting device 1000 having a substrate 10 and at least one light-emitting element 20 is prepared. The substrate 10 includes a base 11, a first wiring 12, and a second wiring 13. The substrate 11 has: a front surface 111 extending in the longitudinal direction and the short direction orthogonal to the longitudinal direction, a rear surface 112 located on the opposite side of the front surface, an upper surface 113 adjacent to the front surface and orthogonal to the front surface, and a lower surface 114 located on the opposite side of the upper surface. The base material 11 has a plurality of recesses 16 opened in the back surface 112 and the lower surface 114. The first wiring 12 is disposed on the front surface 111 of the substrate 11. The second wires 13 are electrically connected to the first wires 12 and are disposed in the plurality of recesses 16, respectively. In the present specification, the term "orthogonal" means a variation of about 90 ± 3 ° is allowable. In the present specification, the longitudinal direction is sometimes referred to as the X direction, the short direction is sometimes referred to as the Y direction, and the direction from the back surface 112 to the front surface 111 is sometimes referred to as the Z direction.

The second wiring 13 of the substrate 10 is bonded to a bonding region, which is a part of the wiring pattern of the support substrate, by solder. The light emitting device has a plurality of second wirings 13 by disposing the second wirings in the plurality of recesses, respectively. By providing the light-emitting device with the plurality of second wires, the bonding strength between the light-emitting device and the support substrate can be improved as compared with the case where the second wire is a single wire.

Although the depth of each of the plurality of recessed portions 16 is not particularly limited, as shown in fig. 2C, the depth of each of the plurality of recessed portions 16 in the Z direction is preferably greater than the depth W1 of the recessed portion on the lower surface 114 side than the depth W2 of the recessed portion on the upper surface 113 side. In this way, the thickness W5 of the base material 11 located on the upper surface 113 side of the recessed portion can be made thicker than the thickness W6 of the base material located on the lower surface side of the recessed portion in the Z direction. This can suppress a decrease in the strength of the base material. Further, by making the depth of the recessed portion 16 in the Z direction deeper on the lower surface 114 side than on the upper surface 113 side, the opening area of the recessed portion 16 in the lower surface 114 of the substrate 11 can be increased. The lower surface 114 of the base material 11 faces the upper surface of the support substrate, and the light-emitting device and the support substrate are joined by solder. By increasing the area of the recessed portion opening portion of the lower surface of the base material facing the support substrate, the area of the solder on the lower surface 114 side of the base material 11 can be increased. This can improve the bonding strength between the light-emitting device and the support substrate.

The recessed portion 16 may or may not penetrate the substrate 11 as shown in fig. 2B and 2C. By not penetrating the recessed portion 16 through the base material, the strength of the base material can be improved as compared with the case where the recessed portion penetrating the base material is provided. In the case where the recessed portion 16 does not penetrate the substrate, the maximum depth of each of the plurality of recessed portions in the Z direction is preferably 0.4 to 0.8 times the thickness W3 of the substrate. By making the depth of the recessed portion deeper than 0.4 times the thickness of the base material, the volume of the solder formed in the recessed portion can be increased, and therefore the bonding strength between the light-emitting device and the support substrate can be improved. By making the depth of the recessed portion shallower than 0.8 times the thickness of the base material, the strength of the base material can be improved.

In cross section, the recessed portion 16 preferably has a parallel portion 161 extending in the Z direction. By providing the parallel portion 161, the volume of the recessed portion 16 of the base material can be increased even if the opening area of the recessed portion 16 of the back surface 112 is the same. By increasing the volume of the recessed portion 16, the amount of solder that can be formed in the recessed portion can be increased, and therefore, the bonding strength between the light-emitting device 1000 and the support substrate can be improved. In the present specification, the term "parallel" means a variation of about ± 3 °. In cross section, the recessed portion 16 may have an inclined portion 162 inclined from the lower surface 114 of the base material in a direction in which the thickness of the base material increases. The inclined portion 162 may be linear or curved. By making the inclined portion 162 straight, it is easy to form with a drill having a sharp tip. The inclined portion 162 is a straight line, and allows variation of about ± 3 μm.

As shown in fig. 3, on the lower surface of the base material, the depth R1 at the center is preferably the maximum of the depths of the recessed portions in the Z direction among the plurality of recessed portions 16. In this way, the thickness R2 of the base material in the Z direction can be increased at the end of the recess in the X direction on the lower surface, and therefore the strength of the base material can be improved. In the present specification, the center allows a variation of about ± 5 μm. The recess 16 can be formed by a known method such as a drill or a laser. On the lower surface, the recess with the greatest depth in the center can be easily formed with a drill with a sharp front end. Further, by using the drill, it is possible to form the recessed portion having a substantially cylindrical shape having a substantially conical shape at the deepest portion and being continuous with the circular shape of the bottom surface of the substantially conical shape. By cutting a part of the recessed portion by cutting or the like, a recessed portion having a substantially semi-cylindrical shape in the deepest portion and a substantially semi-cylindrical shape continuous with the substantially semi-cylindrical shape can be formed. Thus, as shown in fig. 4A, the opening shape of the recess 16 can be formed into a substantially semicircular shape on the back surface. By making the opening shape of the recessed portion substantially semicircular without corners, stress concentration in the recessed portion can be suppressed, and therefore cracking of the base material can be suppressed.

The shape of each of the plurality of recessed portions 16 may be different on the back surface, and as shown in fig. 4A, the shape of each of the plurality of recessed portions 16 may be the same on the back surface. By making the shapes of the plurality of recessed portions the same, the recessed portions can be formed more easily than when the shapes of the recessed portions are different. For example, in the case of forming the recess portion by the drill method, the recess portion may be formed by one drill as long as the respective shapes of the plurality of recess portions are the same. In the present specification, the same means that variations of about ± 5 μm are allowable.

As shown in fig. 4A, each of the plurality of recessed portions 16 is preferably positioned at a bilaterally symmetrical position with respect to a center line C1 of the base material parallel to the Y direction. In this way, when the light-emitting device is bonded to the support substrate via solder, self-alignment effectively works, and the light-emitting device can be accurately mounted on the support substrate.

As shown in fig. 2B, the substrate 10 may have the third wiring 14 disposed on the rear surface 112 of the base material 11. The substrate 10 may have a through hole 15 for electrically connecting the first wiring 12 and the third wiring 14. The through hole 15 is provided in a hole penetrating the front surface 111 and the back surface 112 of the substrate 11. The through hole 15 includes a fourth wiring 151 covering the surface of the through hole of the base material, and a filling member 152 filling the inside of the fourth wiring 151. The filler member 152 may be conductive or insulating. A resin material is preferably used for the filling member 152. In general, the resin material before curing has higher fluidity than the metal material before curing, and therefore, the resin material is easily filled into the fourth wiring 151. Therefore, by using a resin material for the filling member, the substrate can be easily manufactured. As the resin material which is easily filled, for example, an epoxy resin is cited. When a resin material is used as the filler, an additive is preferably contained in order to reduce the linear expansion coefficient. In this way, since the difference between the linear expansion coefficient of the fourth wiring and the linear expansion coefficient of the filling member is reduced, it is possible to suppress formation of a gap between the fourth wiring and the filling member due to heat from the light emitting element. As the additive, for example, silica can be cited. In addition, when a metal material is used for the filler member 152, heat dissipation can be improved.

As shown in fig. 2B and 4A, the through hole 15 and the recess 16 may be in contact with each other, and as shown in the light-emitting device 1001 of fig. 4B, the through hole 15 and the recess 16 may be separated from each other. Since the fourth wiring 151 can be connected to the second wiring by connecting the through hole 15 to the recess 16, the heat dissipation of the light emitting device can be improved. By separating the through-hole 15 from the recessed portion 16, the strength of the base material can be improved compared to the case where the through-hole 15 and the recessed portion 16 are in contact with each other.

As shown in fig. 2B, the light emitting element 20 is disposed on the first wiring 12. The light emitting device 1000 may have at least one light emitting element 20. The light emitting element 20 has a mounting surface facing the substrate 10 and a light output surface 201 on the opposite side of the mounting surface. The light-emitting element 20 includes at least a semiconductor laminate 23, and element electrodes 21 and 22 are provided on the semiconductor laminate 23. The light emitting element 20 may be flip-chip mounted on the substrate 10. Thus, a lead wire for supplying power to the element electrode of the light-emitting element is not required, and therefore, the light-emitting device can be downsized. When the light emitting element 20 is flip-chip mounted, a surface of the light emitting element 20 opposite to the electrode forming surface 203 where the element electrodes 21 and 22 are located is made to be the light output surface 201. In the present embodiment, the light-emitting element 20 includes the element substrate 24, but the element substrate 24 may not be provided. When the light-emitting element 20 is flip-chip mounted on the substrate 10, the element electrodes 21 and 22 of the light-emitting element are electrically connected to the first wiring 12 via the conductive adhesive member 60.

The surface of the light-emitting element 20 opposite to the electrode formation surface on which the element electrode is located may be disposed to face the substrate. In the above case, the electrode-forming surface is a light-output surface. The light-emitting device may further include a lead wire for electrically connecting the element electrode of the light-emitting element and the first wiring in order to supply power to the light-emitting element.

When the light emitting element 20 is flip-chip mounted on the substrate 10, the first wiring 12 preferably has a convex portion 121 as shown in fig. 2B and 5. In a plan view, the convex portion 121 of the first wiring 12 is located at a position overlapping the element electrodes 21 and 22 of the light emitting element 20. In this way, when a melt adhesive is used as the conductive adhesive member 60, when the protruding portion 121 of the first wiring and the element electrodes 21 and 22 of the light-emitting element are connected, the position matching between the light-emitting element and the substrate can be easily performed by the self-alignment effect.

As shown in fig. 2B, the light-emitting device 1000 may include a reflective member 40 covering the element side surface 202 of the light-emitting element 20 and the front surface 111 of the base material. Since the element side surface 202 of the light-emitting element 20 is covered with the reflective member, the contrast between the light-emitting region and the non-light-emitting region is increased, and a light-emitting device having good "separability" can be formed.

As the material of the reflective member 40, for example, a member containing a white pigment in a base material can be used. As the base material of the reflecting member 40, a resin is preferably used, and for example, a silicone resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, or a modified resin of the above resin is preferably used. In particular, a silicone resin having excellent heat resistance and light resistance is preferably used as the base material of the reflective member 40. As the base material of the reflecting member 40, an epoxy resin having a higher hardness than a silicone resin may be used. Thus, the intensity of the light-emitting device can be improved.

The white pigment of the reflective member 40 may be one of titanium dioxide, zinc oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, magnesium silicate, barium titanate, barium sulfate, aluminum hydroxide, aluminum oxide, zirconium oxide, and silicon dioxide, or a combination of two or more of these. The shape of the white pigment may be appropriately selected, and may be an indefinite shape or a broken shape, but from the viewpoint of fluidity, a spherical shape is preferable. The particle size of the white pigment is preferably about 0.1 μm or more and 0.5 μm or less, but is preferably as small as possible in order to improve the effects of light reflectivity and coverage. The content of the white pigment may be appropriately selected, but is, for example, preferably 10 wt% to 80 wt%, more preferably 20 wt% to 70 wt%, and still more preferably 30 wt% to 60 wt%, from the viewpoint of light reflectivity, viscosity in a liquid state, and the like. In addition, the "wt%" is a weight percentage indicating a ratio of the weight of the material to the total weight of the reflective member.

As shown in fig. 6, the side surface 404 of the reflecting member 40 in the longitudinal direction on the lower surface 114 side of the base material is preferably inclined inward of the light-emitting device 1000 in the Z direction. In this way, when the light-emitting device 1000 is mounted on the support substrate, contact between the side surface 404 of the reflecting member 40 and the support substrate is suppressed, and the mounting posture of the light-emitting device 1000 is easily stabilized. The side surface 403 of the reflecting member 40 in the longitudinal direction on the upper surface 113 side of the base material is preferably inclined inward of the light-emitting device 1000 in the Z direction. Thus, contact between the side surface of the reflecting member 40 and the suction nozzle (chuck) is suppressed, and damage to the reflecting member 40 when the light emitting device 1000 is sucked can be suppressed. In this way, it is preferable that the side surface 404 in the longitudinal direction of the reflecting member 40 located on the lower surface 114 side and the side surface 403 in the longitudinal direction of the reflecting member 40 located on the upper surface 113 side are inclined inward of the light emitting device 1000 in the Z direction. The inclination angle θ of the reflecting member 40 can be appropriately selected, but is preferably 0.3 ° or more and 3 ° or less, more preferably 0.5 ° or more and 2 ° or less, and still more preferably 0.7 ° or more and 1.5 ° or less, from the viewpoint of the ease with which the above-described effects are effective and the strength of the reflecting member 40.

As shown in fig. 2B, the light-emitting device 1000 may have the light-transmitting member 30. The light-transmissive member 30 is preferably located on the light-emitting element 20. By positioning the translucent member 30 on the light emitting element 20, the light emitting element can be protected from external stress. The reflective member 40 preferably covers the side surface of the translucent member 30. Thus, the contrast between the light-emitting region and the non-light-emitting region is increased, and a light-emitting device having good "separability" can be formed.

The light-transmitting member 30 may be in contact with the light output surface 201, and as shown in fig. 2B, may cover the light output surface 201 via the light-guiding member 50. The light guide member 50 may be positioned only between the light output surface 201 of the light emitting element and the translucent member 30 to fix the light emitting element 20 and the translucent member 30, or may be covered from the light output surface 201 of the light emitting element to the element side surface 202 of the light emitting element to fix the light emitting element 20 and the translucent member 30. The light guide member 50 has a higher transmittance for light from the light emitting element than the reflecting member 40. Therefore, since the light guide member covers the side surface of the light emitting element, the light emitted from the element side surface of the light emitting element is easily output to the outside of the light emitting device through the light guide member, and thus the light output efficiency can be improved.

The light-transmitting member 30 may contain wavelength conversion particles, which are members that absorb at least a part of the primary light emitted from the light-emitting element 20 and emit secondary light having a wavelength different from that of the primary light, and the light-transmitting member 30 may contain the wavelength conversion particles, thereby enabling the light-emitting device to output mixed light obtained by mixing the primary light emitted from the light-emitting element and the secondary light emitted from the wavelength conversion particles.

The wavelength conversion particles may be uniformly dispersed in the light-transmissive member, or the wavelength conversion particles may be biased to be more toward the vicinity of the light-emitting element than the upper surface of the light-transmissive member 30. By biasing the wavelength converting particles closer to the light emitting element than the upper surface of the light transmissive member 30, the base material of the light transmissive member 30 functions as a protective layer even if the wavelength converting particles sensitive to humidity are used, and therefore degradation of the wavelength converting particles can be suppressed. As shown in fig. 2B, the light-transmitting member 30 may have layers 31 and 32 containing wavelength converting particles and a layer 33 containing substantially no wavelength converting particles. In the Z direction, the layer 33 containing substantially no wavelength converting particles is located on the upper side of the layers 31, 32 containing wavelength converting particles. In this way, since the layer 33 that does not substantially contain wavelength converting particles functions as a protective layer, deterioration of the wavelength converting particles can be suppressed. As the wavelength converting particles sensitive to humidity, for example, a manganese-activated fluoride phosphor can be cited. The manganese-activated fluoride phosphor is a preferable member in terms of obtaining light emission with a narrow spectral width and color reproducibility. The phrase "the wavelength converting particles are not substantially contained" means that the wavelength converting particles inevitably mixed are not excluded, and the content of the wavelength converting particles is preferably 0.05 wt% or less.

The layer containing the wavelength conversion particles of the light-transmitting member 30 may be a single layer or a plurality of layers. For example, as shown in fig. 2B, the light-transmissive member 30 may include: a first wavelength conversion layer 31, and a second wavelength conversion layer 32 covering the first wavelength conversion layer 31. The second wavelength conversion layer 32 may directly cover the first wavelength conversion layer 31, or may cover the first wavelength conversion layer 31 via another light-transmissive layer. The first wavelength conversion layer 31 is disposed closer to the light output surface 201 of the light emitting element 20 than the second wavelength conversion layer 32. The emission peak wavelength of the wavelength conversion particles contained in the first wavelength conversion layer 31 is preferably shorter than the emission peak wavelength of the wavelength conversion particles contained in the second wavelength conversion layer 32. In this way, the wavelength conversion particles of the second wavelength conversion layer 32 can be excited by the light from the first wavelength conversion layer 31 excited by the light emitting element. This can increase the light from the wavelength conversion particles of the second wavelength conversion layer 32.

The wavelength conversion particles contained in the first wavelength conversion layer 31 preferably have an emission peak wavelength of 500nm to 570nm inclusive, and the wavelength conversion particles contained in the second wavelength conversion layer 32 preferably have an emission peak wavelength of 610nm to 750nm inclusive, so that a light-emitting device having high color reproducibility can be obtained, for example, β sialon-based phosphors can be cited as the wavelength conversion particles contained in the first wavelength conversion layer 31, and a phosphor of manganese-activated potassium fluosilicate can be cited as the wavelength conversion particles contained in the second wavelength conversion layer 32. in the case of using a phosphor of manganese-activated potassium fluosilicate as the wavelength conversion particles contained in the second wavelength conversion layer 32, it is particularly preferable that the translucent member 30 has the first wavelength conversion layer 31 and the second wavelength conversion layer 32, and the phosphor of manganese-activated potassium fluosilicate is easily saturated in luminance, but the phosphor of manganese-activated potassium fluosilicate can be suppressed from being excessively irradiated with light from the light-emitting element by the first wavelength conversion layer 31 between the second wavelength conversion layer 32 and the light-emitting element 20.

The light-transmissive member may include: first wavelength conversion particles that absorb at least a part of the primary light emitted from the light emitting element and emit secondary light by inhibiting transition; and second wavelength conversion particles that absorb at least a portion of the primary light emitted by the light emitting element and emit secondary light by allowing transition. In general, the afterglow time of the first wavelength converting particles that emit the secondary light by prohibiting the transition is longer than the afterglow time of the second wavelength converting particles that emit the secondary light by allowing the transition. Therefore, by providing the light-transmissive member with the first wavelength converting particles and the second wavelength converting particles, the afterglow time can be shortened as compared to a case where the light-transmissive member includes only the first wavelength converting particles. For example, the first wavelength conversion particles include a phosphor (for example, K) of potassium fluosilicate activated with manganese₂SiF₆: mn), examples of the second wavelength conversion particles include CASN-based phosphors. By containing the CASN-based phosphor and the manganese-activated potassium fluosilicate in the translucent member, the afterglow time can be shortened as compared with the case where the translucent member contains only the manganese-activated potassium fluosilicate. In addition, in general, the manganese-activated potassium fluosilicate has a half-value width narrower than that of the CASN-based phosphorThe color purity is increased and the color reproducibility is good because of the peak of the emission. Therefore, by incorporating the CASN-based phosphor and the manganese-activated potassium fluosilicate into the translucent member, the color reproducibility is improved as compared with the case where the translucent member contains only the CASN-based phosphor.

For example, the weight of the manganese-activated potassium fluosilicate phosphor contained in the translucent member is preferably 0.5 times or more and 6 times or less, more preferably 1 time or more and 5 times or less, and still more preferably 2 times or more and 4 times or less the weight of the CASN phosphor. The color reproducibility of the light-emitting device is improved by increasing the weight of the phosphor of potassium fluosilicate activated with manganese. The weight of the CASN-based phosphor is increased, whereby the afterglow time can be shortened.

The average particle size of the manganese-activated potassium fluosilicate phosphor is preferably 5 μm or more and 30 μm or less. The average particle diameter of the CASN phosphor is preferably 5 μm or more and 30 μm or less. When the average particle size of the manganese-activated potassium fluosilicate phosphor and/or CASN-based phosphor is 30 μm or less, light from the light-emitting element is easily diffused to the wavelength-converting particles, and therefore, unevenness in chromaticity of light distribution of the light-emitting device can be suppressed. When the average particle size of the manganese-activated potassium fluosilicate phosphor and/or CASN-based phosphor is 5 μm or more, light from the light-emitting element is easily output, and therefore, the light output efficiency of the light-emitting device is improved.

The CASN-based phosphor and the phosphor of manganese-activated potassium fluosilicate may be contained in the same wavelength converting layer of the translucent member, or may be contained in different wavelength converting layers when the translucent member has a plurality of wavelength converting layers. When the phosphor of manganese-activated potassium fluorosilicate and the CASN-based phosphor are contained in different wavelength conversion layers, it is preferable that the wavelength conversion particles having a short peak wavelength of light be located close to the light-emitting element by using the phosphor of manganese-activated potassium fluorosilicate and the CASN-based phosphor. In this way, the wavelength conversion particles having a long peak wavelength of light can be excited by light from the wavelength conversion particles having a short peak wavelength of light. For example, when the peak wavelength of light of the phosphor of manganese-activated potassium fluosilicate is around 631nm and the peak wavelength of light of the CASN-based phosphor is around 650nm, it is preferable that the phosphor of manganese-activated potassium fluosilicate is close to the light-emitting element.

Examples of the second wavelength conversion particles include a SCASN-based phosphor and a SLAN phosphor (SrLiAl)₃N₄Eu), and a manganese-activated potassium fluosilicate, and the light-transmitting member may contain a first wavelength conversion particle and a second wavelength conversion particle which are red phosphors, and an β sialon phosphor which is a green phosphor.

(preparation of supporting substrate)

As shown in fig. 7A and 7B, a support substrate 5000 including a support base 70, a first wiring pattern 81 including a bonding region 810 on an upper surface 701 of the support base 70, and an insulating region 811 surrounding the bonding region 810 is prepared. The support base 70 is an insulating member. The bonding region 810 of the support substrate is a portion of the first wiring pattern 81, and is a portion bonded to the second wiring of the light-emitting device by solder. In the case where the insulating region 811 surrounding the bonding region 810 is such that the upper surface 701 of the support base material 70 is exposed to the outside as shown in fig. 7A, the support base material 70 has the insulating region 811 on the upper surface 701. By surrounding the bonding region 810 with the insulating region 811, the wetting and spreading of the molten solder can be easily controlled. This increases the self-alignment effect, and improves the mountability of the light-emitting device. In general, the molten solder wets and spreads on the first wiring pattern more easily than on the supporting substrate. The supporting substrate and the first wiring pattern may be made of known materials.

As shown in fig. 7B, the support substrate 5000 may have a second wiring pattern 82 located on the lower surface of the support base. The first wiring pattern 81 located on the upper surface of the support substrate and the second wiring pattern 82 located on the lower surface of the support substrate may be electrically connected by a via hole. In the case where the power feeding portion 85 for feeding power is provided on the upper surface of the substrate, the power feeding portion 85 and the second wiring pattern 82 may be electrically connected by a through hole.

As shown in fig. 8A and 8B, the support substrate 5001 may have an insulating layer 72 covering the upper surface 701 of the support base 70 and the first wiring pattern 81. In the case where the insulating layer 72 surrounds the bonding area 810 of the first wiring pattern 81, the insulating layer 72 has an insulating area 811. In general, the molten solder wets and spreads on the first wiring pattern more easily than on the insulating layer. In the case where the bonding region of the first wiring pattern is surrounded by the support base and the insulating layer, the support base and the insulating layer may have an insulating region.

(solder is disposed on the bonding region and the insulating region)

As shown in fig. 9A and 9B, solder 90 is disposed on the bonding area 810 and the insulating area 811 so that the volume of solder 90 on the insulating area 811 is larger than the volume of solder 90 on the bonding area 810. In this way, the volume of solder 90 on the bonding area 810 can be reduced. Thus, when a light-emitting device described later and a support substrate are joined by solder, it is possible to suppress intrusion of molten solder between the lower surface of the base material and the upper surface of the support substrate. Therefore, when the light-emitting device is bonded to the support substrate, the solder heated and melted can be prevented from being formed between the lower surface of the base material and the upper surface of the support substrate, and therefore, the light-emitting device can be prevented from being inclined with respect to the support substrate.

As shown in fig. 9A, the maximum width D2 of the solder 90 on the insulating region 811 is preferably wider than the maximum width D1 of the solder 90 on the bonding region 810 in a plan view. Thus, the volume of the solder 90 on the insulating region 811 is easily larger than the volume of the solder 90 on the bonding region 810. In the present specification, the maximum width of the solder 90 is the maximum value of the width of the solder in the X direction.

As shown in fig. 9B, the upper surface of the solder 90 on the insulating area 811 in the cross section may also be made flush with the upper surface of the solder 90 on the bonding area 810. For example, by disposing a metal mask having an opening on the support substrate and forming solder in the opening of the metal mask by a screen printing method, the upper surface of the solder positioned on the insulating region can be made flush with the upper surface of the solder positioned on the bonding region. In the present specification, the term "flush" means a level that allows a variation of about ± 5 μm.

The maximum thickness of the solder on the insulating region in the cross section may be made the same as the maximum thickness of the solder on the joining region, or the maximum thickness of the solder on the insulating region in the cross section may be made thinner than the maximum thickness of the solder on the joining region, as shown in fig. 9B and 9C, or the maximum thickness D4 of the solder 90 on the insulating region 811 in the cross section may be made thicker than the maximum thickness D3 of the solder 90 on the joining region 810. By making the maximum thickness D4 of the solder 90 on the insulating region 811 thicker than the maximum thickness D3 of the solder 90 on the bonding region 810 in the cross section, it is easy to make the volume of the solder 90 on the insulating region 811 larger than the volume of the solder 90 on the bonding region 810. For example, even when the area of the solder on the insulating region is smaller than the area of the solder on the bonding region in a plan view, the volume of the solder on the insulating region can be made larger than the volume of the solder 90 on the bonding region 810 by making the maximum thickness of the solder on the insulating region larger than the maximum thickness of the solder on the bonding region in a cross section. In this specification, the maximum thickness of the solder is the maximum thickness of the solder in the Y direction.

As shown in fig. 9A, the adhesive resin 92 before curing may be formed on the support substrate. As the adhesive resin 92, a member for bonding the light-emitting device to the support substrate can be used. By having the adhesive resin, the bonding strength between the light-emitting device and the support substrate can be improved. The thickness of the adhesive resin in the Y direction is larger than the distance from the lower surface of the base material to the upper surface of the support base material when the light-emitting device described later is placed on the support substrate so as to be in contact with the light-emitting element. As the adhesive resin, a known resin such as a thermosetting resin and/or a thermoplastic resin can be used. Thermosetting resins such as epoxy resins and silicone resins are preferably used as the adhesive resin because they have good heat resistance and light resistance. The adhesive resin may be separated from the bonding region or may be in contact with a part of the bonding region. Since the solder is formed on the bonding region, the bonding resin is preferably separated from the bonding region in a plan view. By separating the bonding resin from the bonding region, the molten solder is easily wetted and spread on the bonding region when the light-emitting device and the support substrate are bonded by the solder. As shown in fig. 9A, the adhesive resin 92 is preferably located between a pair of bonding regions 810 of one light emitting device to which the second wire is bonded in the X direction. Since the second wiring of the light-emitting device is bonded to the bonding region of the support substrate with solder, the adhesive resin is positioned between the pair of bonding regions 810 of the light-emitting device to which the second wiring is bonded in the X direction, whereby stress on the base material of the light-emitting device can be suppressed.

Examples of a method for forming the adhesive resin before curing on the support substrate include coating by dispensing or pin transfer, and spraying by ink jet or spray coating. When the adhesive resin is formed by dispensing or the like, the adhesive resin 92 may be applied at one point as shown in fig. 9A, or the adhesive resin 92 may be applied at multiple points as shown in fig. 9D and 9E. Further, as shown in fig. 9F, an adhesive resin applied at multiple points may be connected. In the case of multipoint application of the adhesive resin 92, a plurality of adhesive resins may be arranged in the Z direction, or a plurality of adhesive resins may be arranged in the X direction as shown in fig. 9D.

(mounting the light-emitting device on the supporting substrate)

As shown in fig. 10A and 10B, the solder 90 is separated from the second wiring 13 located near the lower surface 114 of the base material in a plan view, and the light-emitting device 1000 is mounted on the support substrate 5000. In this specification, the second wiring located near the lower surface of the base material means a portion of the second wiring 13 flush with the lower surface 114 of the base material. By separating the solder 90 from the second wiring 13 located near the lower surface 114 of the base material and mounting the light-emitting device on the support substrate, it is possible to suppress intrusion of molten solder between the lower surface of the base material and the upper surface of the support substrate when the light-emitting device and the support substrate are joined by solder. Accordingly, when the light-emitting device described later is bonded to the support substrate, the solder melted by heating can be prevented from being formed between the lower surface of the base material and the upper surface of the support substrate, and therefore, the light-emitting device can be prevented from being inclined with respect to the support substrate. When the light-emitting device 1000 is placed on the support substrate 5000 with the solder 90 separated from the second wiring 13 located near the lower surface 114 of the base material, the solder before being heated and melted is not located between the lower surface 114 of the base material and the upper surface of the support substrate.

As shown in fig. 10B, the solder 90 and the second wiring 13 may be separated from each other in the cross section, and as shown in fig. 10C, the solder 90 and at least a part of the second wiring 13 other than the vicinity of the lower surface 114 of the base may not be in contact with each other in the cross section. The second wiring 13 located outside the vicinity of the lower surface 114 of the substrate is a portion of the second wiring 13 that is not flush with (not flush with) the lower surface 114 of the substrate. That is, the solder 90 may be in contact with at least a part of the second wiring 13 that is not flush with the lower surface 114 of the base material.

As shown in fig. 9A, when the adhesive resin 92 before curing is formed on the support substrate, the light-emitting device is placed on the support substrate, and the adhesive resin before curing is brought into contact with a part of the light-emitting device. In this way, the light-emitting device and the support substrate can be fixed by the cured adhesive resin, and therefore, the bonding strength between the light-emitting device and the support substrate is improved. The position of the adhesive resin is not particularly limited. For example, as shown in fig. 10A, the adhesive resin 92 may be located between the plurality of concave portions 16 of the base material. Since the second wiring 13 disposed in each of the plurality of recessed portions of the substrate 10 is bonded to the bonding region of the wiring pattern of the support substrate by solder, the stress on the base material of the light-emitting device can be suppressed by positioning the adhesive resin 92 between the plurality of recessed portions 16 of the base material. As shown in fig. 10A, in a plan view, the shortest distance between the front surface 111 of the base material and the outer edge of the adhesive resin 92 is preferably shorter than the shortest distance between the front surface 111 of the base material and the outer edge of the solder 90. In this way, the front surface 111 side of the base material and the support substrate are bonded by the adhesive resin 92, so that the bonding strength between the light-emitting device and the support substrate is improved. Further, the light emitting device coated with the adhesive resin before curing may be mounted on the support substrate.

The size of the adhesive resin in a plan view is not particularly limited, but the maximum width D5 of the adhesive resin in the Z direction is preferably 0.2 to 0.7 times the maximum width D6 of the light-emitting device in the Z direction in a plan view. When the maximum width D5 of the adhesive resin in the Z direction is 0.2 times or more the maximum width D6 of the light-emitting device in the Z direction in plan view, the volume of the adhesive resin increases, and therefore the bonding strength between the light-emitting device and the support substrate improves. By setting the maximum width D5 of the adhesive resin in the Z direction to 0.7 times or less the maximum width D6 of the light-emitting device in the Z direction in plan view, the adhesive resin can be made difficult to form on the bonding region.

In a plan view, the maximum width of the recessed portion is preferably narrower than the maximum width of the bonding region. Thus, the area of the second wiring located on the bonding region is easily increased in a plan view. The maximum width of the recessed portion is the maximum of the width of the recessed portion in the X direction, and the maximum width of the joining region is the maximum of the width of the joining region in the X direction.

(bonding the second wiring of the light-emitting device to the bonding portion of the support substrate)

As shown in fig. 11, the solder 90 is heated and melted to bond the second wiring 13 of the light emitting device to the bonding region 810 of the support substrate 5000. The molten solder is concentrated on the joint area 810 where wetting and spreading are easy. This makes it possible to increase the volume of the solder after heating and melting located on the bonding region to be larger than the volume of the solder after heating and melting located on the insulating region. By making the volume of the solder after heating and melting on the bonding region large, the second wiring 13 and the bonding region 810 can be easily bonded by the solder. This improves the bonding strength between the light-emitting device and the support substrate. Since the solder melted by heating is difficult to form between the lower surface of the base material and the upper surface of the support substrate, the light-emitting device can be prevented from being bonded to the support substrate while being inclined. As shown in fig. 11, it is preferable that all the solder melted by heating be located on the bonding region.

When the adhesive resin before curing is formed on the support substrate, the adhesive resin may be cured when the solder is heated and melted in order to bond the second wiring of the light-emitting device to the bonding region 810 of the support substrate 5000. Thus, the time for manufacturing the light source device can be shortened.

As described above, the light source device 1000A can be manufactured by performing the above steps.

(second embodiment)

A method for manufacturing a light source device according to a second embodiment will be described. The method for manufacturing the light source device of the second embodiment is the same as the method for manufacturing the light source device of the first embodiment except for the step of preparing the light emitting device.

As shown in fig. 13B, a light-emitting device 2000 having a substrate 10 and a plurality of light-emitting elements is prepared. The substrate 10 includes a base 11, a first wiring 12, and a second wiring 13, as in the light-emitting device of the first embodiment. The light-emitting device 2000 of the second embodiment includes a plurality of light-emitting elements, i.e., a first light-emitting element 20A and a second light-emitting element 20B. The first light-emitting element and/or the second light-emitting element may be referred to as a light-emitting element. The first light-emitting element and the second light-emitting element may have the same or different emission peak wavelengths. For example, in the case where the emission peak wavelengths of the first light-emitting element and the second light-emitting element are the same, the peak wavelengths of the emissions of the first light-emitting element and the second light-emitting element may be in a range of 430nm or more and less than 490nm (a wavelength range of a blue region). In the case where the emission peak wavelengths of the first light-emitting element and the second light-emitting element are different from each other, the first light-emitting element may emit light having a peak wavelength in a range of 430nm or more and less than 490nm (wavelength range of blue region) and the second light-emitting element may emit light having a peak wavelength in a range of 490nm or more and 570nm or less (wavelength range of green region). Thus, the color reproducibility of the light-emitting device can be improved. The emission peak wavelengths are the same, and variations of about ± 10nm are allowable.

As shown in fig. 13B, the light-transmitting member 30 may be provided so as to cover the first light-emitting element 20A and the second light-emitting element 20B. By providing the light-emitting device 2000 with the light-transmitting member 30 covering the first light output surface 201A of the first light-emitting element 20A and the second light output surface 201B of the second light-emitting element 20B, it is possible to suppress luminance unevenness between the first light-emitting element and the second light-emitting element. In addition, when the emission peak wavelengths of the first light-emitting element and the second light-emitting element are different from each other, the color mixing property of the light-emitting device can be improved by guiding the light from the first light-emitting element and the light from the second light-emitting element to the light guide member.

As shown in fig. 13B, the light guide member 50 may continuously cover the first element side surface 202A of the first light-emitting element 20A and the second element side surface 202B of the second light-emitting element 20B. Thus, luminance unevenness between the first light-emitting element and the second light-emitting element can be suppressed.

As shown in fig. 12B and 13B, the light-emitting device 2000 may have an insulating film 18 covering a part of the third wiring 14. By providing the insulating film 18, it is possible to secure insulation of the rear surface and prevent short circuit. Further, the third wiring can be prevented from peeling off the base material by the insulating film 18.

As shown in fig. 14, the light-emitting device 2001 may include a first light-transmitting member 30A covering the first light-emitting element 20A and a second light-transmitting member 30B covering the second light-emitting element 20B. The wavelength conversion particles contained in the first light-transmissive member and the second light-transmissive member may be the same or different. In the case of a first light-emitting element having a peak wavelength of light emission in a range of 430nm or more and less than 490nm (a wavelength range of a blue region) and a second light-emitting element having a peak wavelength of light emission in a range of 490nm or more and 570nm or less (a wavelength range of a green region), the first translucent member 30A may contain a red phosphor, and the second translucent member 30B may not substantially contain wavelength conversion particles. Thus, the color reproducibility of the light-emitting device can be improved. In addition, since light from the second light-emitting element is not blocked by the wavelength conversion particles, the light output efficiency of the light-emitting device is improved. Examples of the red phosphor contained in the first translucent member include a fluoride-based phosphor activated with manganese.

Next, each constituent element of the light-emitting device according to one embodiment of the present invention will be described.

(substrate 10)

The substrate 10 is a member on which the light emitting element is mounted. The substrate 10 includes at least a base 11, a first wiring 12, and a second wiring 13.

(substrate 11)

The substrate 11 may be formed using an insulating member such as resin, fiber-reinforced resin, ceramic, or glass. Examples of the resin or fiber-reinforced resin include epoxy, glass epoxy, Bismaleimide Triazine (BT), polyimide, and the like. Examples of the ceramics include alumina, aluminum nitride, zirconia, zirconium nitride, titania, titanium nitride, and mixtures thereof. Among the above-mentioned substrates, a substrate having physical properties close to the linear expansion coefficient of the light-emitting element is particularly preferably used. The lower limit of the thickness of the substrate may be appropriately selected, but is preferably 0.05mm or more, and more preferably 0.2mm or more, from the viewpoint of the strength of the substrate. The upper limit of the thickness of the base material is preferably 0.5mm or less, and more preferably 0.4mm or less, from the viewpoint of the thickness (depth) of the light-emitting device.

(first wiring 12)

The first wiring is disposed on the front surface of the substrate and electrically connected to the light emitting element. The first wiring may be formed of copper, iron, nickel, tungsten, chromium, aluminum, silver, gold, titanium, palladium, rhodium, or an alloy thereof. The metal or alloy may be a single layer or a plurality of layers. Copper or a copper alloy is particularly preferable in view of heat dissipation. In addition, a layer of silver, platinum, aluminum, rhodium, gold, or an alloy thereof may be provided on the surface layer of the first wiring, in view of wettability and/or light reflectivity of the fusible conductive adhesive member.

(second wiring 13)

The second wiring is electrically connected to the first wiring and covers the inner wall of the recess of the substrate. The second wiring may be formed using the same conductive member as the first wiring.

(light-emitting element 20 (first light-emitting element, second light-emitting element))

The light emitting element is a semiconductor element which emits light by itself when a voltage is applied, and nitridation can be appliedA known semiconductor element including a semiconductor material. Examples of the light-emitting element include an LED chip. The light-emitting element has at least a semiconductor layer and, in most cases, an element substrate. The light emitting element has an element electrode. The element electrode may be made of gold, silver, tin, platinum, rhodium, titanium, aluminum, tungsten, palladium, nickel, or an alloy thereof. As the semiconductor material, a nitride semiconductor is preferably used. The nitride semiconductor is mainly composed of the formula In_xAl_yGa_1-x-yN (0. ltoreq. x, 0. ltoreq. y, x + y. ltoreq.1). In addition, inalgas semiconductors, InAlGaP semiconductors, zinc sulfide, zinc selenide, silicon carbide, and the like can be used. The element substrate of the light-emitting element is mainly a crystal growth substrate capable of growing a semiconductor crystal constituting the semiconductor laminate, but may be a bonding substrate which is separated from the crystal growth substrate and bonded to the semiconductor element structure. By providing the element substrate with light-transmitting properties, flip-chip mounting is easy to employ, and light output efficiency is easy to improve. Examples of the base material of the element substrate include sapphire, gallium nitride, aluminum nitride, silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, zinc sulfide, zinc oxide, zinc selenide, and diamond. Among them, sapphire is preferable. The thickness of the element substrate may be appropriately selected, and is, for example, 0.02mm or more and 1mm or less, but is preferably 0.05mm or more and 0.3mm or less in terms of the intensity of the element substrate and/or the thickness of the light-emitting device.

(reflection member 40)

The reflective member is a member that covers the element side surface 202 of the light-emitting element 20 and the front surface 111 of the base material and forms a light-emitting device having good "separability". The light reflectance of the reflective member at the emission peak wavelength of the light-emitting element is preferably 70% or more, more preferably 80% or more, and still more preferably 90% or more. For example, a reflective member containing a white pigment in a resin may be used.

(translucent member 30)

The light-transmitting member covers the light output surface of the light-emitting element and protects the light-transmitting property of the light-emitting element. As a material of the light-transmitting member, for example, a resin can be used. Examples of the resin that can be used for the light-transmitting member include a silicone resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, and a modified resin of the above resins. The material of the light-transmitting member is preferably an epoxy resin because the strength of the light-emitting device can be improved more than when a silicone resin is used. Further, the silicone resin and the modified silicone resin are preferable because they are excellent in heat resistance and light resistance. The light-transmitting member may contain wavelength conversion particles and/or diffusion particles.

(wavelength converting particles)

The wavelength conversion particles absorb at least a part of the primary light emitted from the light emitting element and emit secondary light having a wavelength different from that of the primary light. The wavelength conversion particles may be used alone or in combination of two or more of the specific examples shown below. When the light-transmitting member has a plurality of wavelength conversion layers, the wavelength conversion particles contained in the wavelength conversion layers may be the same or different.

Examples of the green-emitting wavelength conversion particles include yttrium/aluminum/garnet-based phosphors (e.g., Y)₃(Al，Ga)₅O₁₂: ce), lutetium/aluminum/garnet-based phosphors (e.g., Lu)₃(Al，Ga)₅O₁₂: ce), terbium/aluminum/garnet-based phosphor (e.g., Tb)₃(Al，Ga)₅O₁₂: ce), silicate phosphor (e.g., (Ba, Sr)₂SiO₄: eu), chlorosilicate based phosphor (e.g., Ca)₈Mg(SiO₄)₄Cl₂Eu), β sialon based phosphor (e.g., Si_6-zAl_zO_zN_8-z: eu (0 < z < 4.2)), SGS-based phosphor (e.g., SrGa₂S₄: eu) and alkaline earth aluminate phosphor (e.g., (Ba, Sr, Ca) Mg)_xAl₁₀O_16+xEu, Mn (wherein 0. ltoreq. X. ltoreq.1), and the like As the yellow light-emitting wavelength converting particles, α sialon-based phosphors (for example, M)_z(Si，Al)₁₂(O，N)₁₆(wherein 0 < z.ltoreq.2, M is Li, Mg, Ca, Y, and other than La and Ce)Lanthanide series elements)), and the like. In addition, the wavelength converting particles emitting yellow light are also included among the wavelength converting particles emitting green light. For example, the yttrium/aluminum/garnet phosphor can convert the emission peak wavelength to the longer wavelength side by replacing a part of Y with Gd, and can emit yellow light. The wavelength conversion particles may also include wavelength conversion particles capable of emitting orange light. The red-emitting wavelength converting particles include nitrogen-containing aluminosilicate (CASN or SCASN) -based phosphors (e.g., (Sr, Ca) AlSiN₃: eu) and SLAN phosphor (SrLiAl)₃N₄: eu), and the like. In addition, manganese-activated fluoride phosphors (represented by formula (I) A)₂[M_1-aMn_aF₆]A phosphor represented by the formula (I) (wherein A is selected from the group consisting of K, Li, Na, Rb, Cs and NH₄At least one element selected from the group consisting of group IV elements and group VIII elements, and a satisfies 0 < a < 0.2)). As a typical example of the manganese-activated fluoride phosphor, a phosphor having manganese-activated potassium fluosilicate (for example, K)₂SiF₆：Mn)。

(diffusion particles)

Examples of the diffusion particles include silica, alumina, zirconia, and zinc oxide. The diffusion particles may be used alone or in combination of two or more of the above. Silica having a small thermal expansion coefficient is particularly preferable. Further, by using nanoparticles as the diffusion particles, scattering of light emitted from the light-emitting element can be increased, and the amount of wavelength conversion particles used can be reduced. The nanoparticles are particles having a particle diameter of 1nm to 100 nm. The "particle diameter" in the present specification is represented by, for example, D₅₀And (4) defining.

(light guide member 50)

The light guide member is a member that fixes the light emitting element and the light transmitting member and guides light from the light emitting element to the light transmitting member. The base material of the light guide member may be a silicone resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, or a modified resin of the above resins. The light guide member is preferably made of an epoxy resin because the strength of the light emitting device can be improved more than when a silicone resin is used. Further, the silicone resin and the modified silicone resin are preferable because they are excellent in heat resistance and light resistance. The light guide member may contain the same wavelength conversion particles and/or diffusion particles as those of the light-transmitting member.

(conductive adhesive member 60)

The conductive adhesive member is a member for electrically connecting the element electrode of the light-emitting element and the first wiring. As the conductive adhesive member, any of bumps of gold, silver, copper, or the like, metal paste containing metal powder of silver, gold, copper, platinum, aluminum, palladium, or the like and a resin binder, solder of tin-bismuth type, tin-copper type, tin-silver type, gold-tin type, or the like, and solder of low-melting point metal or the like can be used.

Industrial applicability

The light-emitting device according to one embodiment of the present invention can be applied to a backlight device of a liquid crystal display, various lighting devices, a large-sized display, various display devices such as an advertisement and a destination guide, a projector device, and an image reading device such as a digital video camera, a facsimile, a copier, and a scanner.