Micro light-emitting diode crystal grain and micro light-emitting diode wafer
阅读说明:本技术 微型发光二极管晶粒及微型发光二极管晶圆 (Micro light-emitting diode crystal grain and micro light-emitting diode wafer ) 是由 陈奕静 李玉柱 于 2019-10-22 设计创作,主要内容包括:本发明提供一种微型发光二极管晶粒及微型发光二极管晶圆。微型发光二极管晶粒,包括发光层、第一型半导体层以及第二型半导体层。发光层包括金属元素以及多个非磊晶介质。非磊晶介质彼此分离以分散金属元素。任两相邻的非磊晶介质之间的水平距离小于100纳米。第一型半导体层配置于发光层的一侧上。第二型半导体层配置于发光层的另一侧上。本发明的微型发光二极管晶粒,其可通过非磊晶介质的配置来控制金属元素的聚集程度。本发明的微型发光二极管晶圆,其同时具有不同色光的发光层,于切割后可具有较佳的产能。(The invention provides a micro light-emitting diode crystal grain and a micro light-emitting diode wafer. The micro light emitting diode grain comprises a light emitting layer, a first type semiconductor layer and a second type semiconductor layer. The light-emitting layer includes a metal element and a plurality of non-epitaxial media. The non-epitaxial media are separated from each other to disperse the metal element. The horizontal distance between any two adjacent non-epitaxial media is less than 100 nanometers. The first type semiconductor layer is disposed on one side of the light emitting layer. The second type semiconductor layer is configured on the other side of the luminous layer. The micro light-emitting diode grain can control the aggregation degree of the metal elements through the configuration of the non-epitaxial medium. The micro light-emitting diode wafer has the light-emitting layers with different colors, and has better productivity after being cut.)
1. A micro light emitting diode die comprising:
a light emitting layer including a metal element and a plurality of non-epitaxial media, wherein the non-epitaxial media are separated from each other to disperse the metal element, and a horizontal distance between any two adjacent non-epitaxial media is less than 100 nm;
a first type semiconductor layer disposed on one side of the light emitting layer; and
and the second type semiconductor layer is configured on the other side of the luminous layer.
2. The micro light emitting diode die of claim 1, wherein the non-epitaxial dielectrics comprise silicon dioxide, silicon nitride or metal oxide, and the non-epitaxial dielectrics are insulating patterns.
3. The micro light emitting diode die of claim 2, wherein the plurality of insulating patterns have a shape comprising a rectangle, a semicircle, a semi-ellipse, a trapezoid, or a combination thereof, in a cross-sectional view.
4. The micro light-emitting diode die of claim 1, wherein the plurality of non-epitaxial media is air.
5. The micro light emitting diode die of claim 4, wherein the first type semiconductor layer is a P-type semiconductor layer, the second type semiconductor layer is an N-type semiconductor layer, and the second type semiconductor layer has a plurality of grooves corresponding to the plurality of non-epitaxial media, respectively.
6. The micro light emitting diode die of claim 5, wherein each of the grooves has a roughened surface.
7. The micro light emitting diode die of claim 1, wherein the metal element is indium.
8. The micro light-emitting diode die of claim 1, wherein the light-emitting layer has a chemical formula InxGa1-xN, and x is between 0.23 and 0.31, or alternatively, x is between 0.38 and 0.44.
9. A micro light emitting diode wafer comprises:
a light emitting layer including a metal element and a plurality of non-epitaxial media, wherein the plurality of non-epitaxial media are separated from each other to disperse the metal element, wherein in a first unit area and a second unit area which are adjacent to each other, the plurality of non-epitaxial media in the first unit area are arranged at an equal interval, two adjacent non-epitaxial media have a first pitch in the first unit area, the plurality of non-epitaxial media in the second unit area are arranged at an equal interval, two adjacent non-epitaxial media have a second pitch in the second unit area, the second pitch is larger than the first pitch, and a horizontal distance between any two adjacent non-epitaxial media is smaller than 100 nm;
a first type semiconductor layer disposed on one side of the light emitting layer; and
and the second type semiconductor layer is configured on the other side of the luminous layer.
10. The micro light emitting diode wafer of claim 9, wherein the light emitting layer generates blue light in the first unit area and the light emitting layer generates green light in the second unit area.
11. The micro light-emitting diode wafer of claim 9, wherein the non-epitaxial dielectrics comprise silicon dioxide, silicon nitride or metal oxide, and the non-epitaxial dielectrics are insulating patterns.
12. The micro led wafer of claim 11, wherein the shape of the plurality of insulation patterns comprises a rectangle, a semicircle, a semi-ellipse, a trapezoid, or a combination thereof.
13. The micro light-emitting diode wafer of claim 9, wherein the plurality of non-epitaxial media is air.
14. The micro light emitting diode wafer of claim 13, wherein the first type semiconductor layer is a P-type semiconductor layer, the second type semiconductor layer is an N-type semiconductor layer, and the second type semiconductor layer has a plurality of grooves corresponding to the plurality of non-epitaxial media, respectively.
15. The micro light-emitting diode wafer of claim 14, wherein each of the grooves has a rough surface.
16. The micro light-emitting diode wafer of claim 9, wherein the metal element is indium.
17. The micro light-emitting diode wafer of claim 9, wherein the chemical formula of the light-emitting layer is InxGa1-xN, and x is between 0.23 and 0.31 and x is between 0.38 and 0.44.
Technical Field
The present invention relates to light emitting diode structures, and particularly to a micro light emitting diode die and a micro light emitting diode wafer.
Background
In the prior art, the light emitting layer is mostly designed with multiple quantum wells. The material of the quantum well layer in the light emitting layer is typically indium gallium nitride (InGaN), and the material of the barrier layer in the light emitting layer is typically gallium nitride (GaN). When the indium doping concentration of the quantum well layer is higher, the wavelength of light emitted from the light emitting layer is longer. Conversely, the lower the indium doping concentration of the quantum well layer, the shorter the wavelength of light emitted by the light-emitting layer. Therefore, when the light emitting diode is manufactured, the indium doping concentration in the quantum well layer can be regulated and controlled, so that the light emitting layer can emit light rays such as blue light or green light. Therefore, how to control the indium doping concentration in the quantum well layer has become one of the important issues of research.
Disclosure of Invention
The invention provides a micro light-emitting diode grain, which can control the aggregation degree of metal elements through the configuration of a non-epitaxial medium.
The invention provides a micro light-emitting diode wafer which is provided with light-emitting layers with different colors, and has better productivity after being cut.
The micro light-emitting diode grain comprises a light-emitting layer, a first type semiconductor layer and a second type semiconductor layer. The light-emitting layer includes a metal element and a plurality of non-epitaxial media. The non-epitaxial media are separated from each other to disperse the metal element. The horizontal distance between any two adjacent non-epitaxial media is less than 100 nanometers. The first type semiconductor layer is disposed on one side of the light emitting layer. The second type semiconductor layer is configured on the other side of the luminous layer.
In an embodiment of the invention, a material of the non-epitaxial dielectric includes silicon dioxide, silicon nitride or metal oxide, and the non-epitaxial dielectric is a plurality of insulation patterns.
In an embodiment of the invention, the shape of the insulation pattern includes a rectangle, a semicircle, a semi-ellipse, a trapezoid or a combination thereof.
In an embodiment of the invention, the non-epitaxial medium is air.
In an embodiment of the invention, the first type semiconductor layer is a P-type semiconductor layer, and the second type semiconductor layer is an N-type semiconductor layer. The second type semiconductor layer has a plurality of grooves corresponding to the non-epitaxial media respectively.
In an embodiment of the invention, each of the grooves has a rough surface.
In an embodiment of the invention, the metal element is indium.
In an embodiment of the invention, the chemical formula of the light emitting layer is InxGa1-xN, and x is between 0.23 and 0.31, or alternatively, x is between 0.38 and 0.44.
The invention relates to a micro light-emitting diode wafer, which comprises a light-emitting layer, a first type semiconductor layer and a second type semiconductor layer. The light-emitting layer includes a metal element and a plurality of non-epitaxial media. The non-epitaxial media are separated from each other to disperse the metal element. In the adjacent first unit area and the second unit area, the non-epitaxial mediums in the first unit area are arranged at equal intervals, and the adjacent two non-epitaxial mediums have a first interval in the first unit area. The non-epitaxial media in the second unit area are arranged at equal intervals, and two adjacent non-epitaxial media have a second interval in the second unit area, and the second interval is larger than the first interval. The horizontal distance between any two adjacent non-epitaxial media is less than 100 nanometers. The first type semiconductor layer is disposed on one side of the light emitting layer. The second type semiconductor layer is configured on the other side of the luminous layer.
In an embodiment of the invention, the light emitting layer generates blue light in a first unit area, and the light emitting layer generates green light in a second unit area.
In an embodiment of the invention, a material of the non-epitaxial dielectric includes silicon dioxide, silicon nitride or metal oxide, and the non-epitaxial dielectric is a plurality of insulation patterns.
In an embodiment of the invention, the shape of the insulation pattern includes a rectangle, a semicircle, a semi-ellipse, a trapezoid or a combination thereof.
In an embodiment of the invention, the non-epitaxial medium is air.
In an embodiment of the invention, the first type semiconductor layer is a P-type semiconductor layer, and the second type semiconductor layer is an N-type semiconductor layer. The second type semiconductor layer has a plurality of grooves corresponding to the non-epitaxial media respectively.
In an embodiment of the invention, each of the grooves has a rough surface.
In an embodiment of the invention, the metal element is indium.
In an embodiment of the invention, the chemical formula of the light emitting layer is InxGa1-xN, and x is between 0.23 and 0.31 and x is between 0.38 and 0.44.
In view of the above, in the design of the micro light emitting diode die of the present invention, the light emitting layer includes the metal element and the non-epitaxial medium, wherein the non-epitaxial medium is separated from each other to disperse the metal element, and a horizontal distance between any two adjacent non-epitaxial media is less than 100 nm. The concentration degree of the metal elements is controlled by the non-epitaxial medium, so as to modulate the color light emitted by the light-emitting layer. In addition, in the micro light-emitting diode wafer, the non-epitaxial mediums have different pitches in different areas, so that the light-emitting layer can have different color lights at the same time. Therefore, after the micro light-emitting diode wafer is cut, micro light-emitting diode crystal grains with different colors can be obtained at the same time, and better productivity can be achieved.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
Fig. 1A is a schematic top view of a portion of a micro light emitting diode die according to an embodiment of the invention;
FIG. 1B is a schematic cross-sectional view of the micro light emitting diode die of FIG. 1A;
fig. 2A is a schematic cross-sectional view of a micro light emitting diode die according to an embodiment of the invention;
fig. 2B is a schematic cross-sectional view of a micro light emitting diode die according to another embodiment of the invention;
fig. 2C is a schematic cross-sectional view of a micro light emitting diode die according to yet another embodiment of the invention;
fig. 3A is a schematic top view of a micro light emitting diode wafer according to an embodiment of the invention;
fig. 3B is a cross-sectional view of the micro led wafer of fig. 3A.
Description of the reference numerals
10: wafer
100a, 100b, 100c, 100d, 100e1, 100e 2: micro light-emitting diode crystal grain
110a, 110b, 110c, 110d, 110 e: luminescent layer
111: one side of
112: quantum well layer
113: the other side
114a, 114b, 114c, 114d, 114 e: non-epitaxial medium
115a, 115b, 115c, 115 e: insulating pattern
120: first type semiconductor layer
130. 130 d: second type semiconductor layer
132: groove
133: rough surface
140: first type electrode
150: second type electrode
160: insulating protective layer
A1: first unit area
A2: second unit area
H: horizontal distance
P1: first interval
P2: second pitch
Detailed Description
Fig. 1A is a schematic top view of a micro light emitting diode die according to an embodiment of the invention. Fig. 1B is a schematic cross-sectional view of the micro led die of fig. 1A. Referring to fig. 1A and fig. 1B, the micro light emitting
In detail, the
In particular, the material of the non-epitaxial dielectric 114a of the present embodiment is, for example, silicon dioxide, silicon nitride or metal oxide, and the non-epitaxial dielectric 114a is a plurality of insulating
For example, when the distance between any two adjacent insulating
In detail, in the present embodiment, after the second
In short, in the design of the micro light emitting diode die 100a of the present embodiment, the
It should be noted that the following embodiments follow the reference numerals and parts of the contents of the foregoing embodiments, wherein the same reference numerals are used to indicate the same or similar elements, and the description of the same technical contents is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
Fig. 2A is a schematic cross-sectional view of a micro light emitting diode die according to an embodiment of the invention. Referring to fig. 1B and fig. 2A, the micro led die 100B of the present embodiment is similar to the micro led
Fig. 2B is a schematic cross-sectional view of a micro light emitting diode die according to another embodiment of the invention. Referring to fig. 1B and fig. 2B, the micro led
It should be noted that, in other embodiments not shown, the shape of the insulation pattern may also be a semi-circle, or a combination of any two shapes of a rectangle, a semi-circle, a semi-ellipse or a trapezoid in cross section, and still fall within the protection scope of the present invention.
Fig. 2C is a schematic cross-sectional view of a micro light emitting diode die according to another embodiment of the invention. Referring to fig. 1B and fig. 2C, the micro led
Since the second
Fig. 3A is a schematic top view of a micro light emitting diode wafer according to an embodiment of the invention. Fig. 3B is a cross-sectional view of the micro led wafer of fig. 3A. Referring to fig. 3A and fig. 3B, the non-epitaxial medium 114e of the light-emitting
Here, the chemical formula of the
In this embodiment, the entire
In short, the micro led
In summary, in the design of the micro light emitting diode die of the present invention, the light emitting layer includes the metal element and the non-epitaxial medium, wherein the non-epitaxial medium is separated from each other to disperse the metal element, and a horizontal distance between any two adjacent non-epitaxial media is less than 100 nm. The concentration degree of the metal elements is controlled by the arrangement of a non-epitaxial medium (such as an insulating block of silicon dioxide or air), so as to modulate the color light emitted by the light-emitting layer. In addition, in the micro light-emitting diode wafer, the non-epitaxial mediums have different pitches in different areas, so that the light-emitting layer can have different color lights at the same time. Therefore, after the micro light-emitting diode wafer is cut, micro light-emitting diode crystal grains with different colors can be obtained at the same time, and better productivity can be achieved.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention.
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