阅读说明：本技术 一种具有侧壁异形电极结构的led芯片 (LED chip with side wall special-shaped electrode structure ) 是由 罗坤 黄斌斌 陈权 韩忠富 刘兆 于 2021-08-18 设计创作，主要内容包括：本发明提供了一种具有侧壁异形电极结构的LED芯片,包括：透明衬底；设置在所述透明衬底一侧的外延层,所述外延层包括在第一方向上依次设置的N型半导体层、有源层和P型半导体层,所述第一方向垂直于所述透明衬底且由所述透明衬底指向所述外延层；设置在所述外延层侧壁的第一电极和第二电极,所述第一电极与所述N型半导体连接,所述第二电极与所述P型半导体连接。该LED芯片通过采用设置在外延层侧壁上的第一电极和第二电极,替换掉常规LED芯片的表面电极结构,进而极大程度的提高了LED芯片的发光区面积,并且,采用透明衬底实现了LED芯片的双面透明出光,以此提高LED芯片的出光效率。(The invention provides an LED chip with a side wall special-shaped electrode structure, which comprises: a transparent substrate; the epitaxial layer is arranged on one side of the transparent substrate and comprises an N-type semiconductor layer, an active layer and a P-type semiconductor layer which are sequentially arranged in a first direction, and the first direction is vertical to the transparent substrate and points to the epitaxial layer from the transparent substrate; the first electrode and the second electrode are arranged on the side wall of the epitaxial layer, the first electrode is connected with the N-type semiconductor, and the second electrode is connected with the P-type semiconductor. This LED chip replaces the surface electrode structure of conventional LED chip through adopting first electrode and the second electrode that sets up on the epitaxial layer lateral wall, and then the improvement of very big degree the luminous zone area of LED chip to, adopt transparent substrate to realize the two-sided transparent light-emitting of LED chip, with this light-emitting efficiency who improves the LED chip.)

1. An LED chip having a sidewall profile electrode structure, the LED chip comprising:

a transparent substrate;

the epitaxial layer is arranged on one side of the transparent substrate and comprises an N-type semiconductor layer, an active layer and a P-type semiconductor layer which are sequentially arranged in a first direction, and the first direction is vertical to the transparent substrate and points to the epitaxial layer from the transparent substrate;

the first electrode and the second electrode are arranged on the side wall of the epitaxial layer, the first electrode is connected with the N-type semiconductor, and the second electrode is connected with the P-type semiconductor.

2. The LED chip of claim 1, wherein said LED chip further comprises:

and the current expansion layer is arranged on one side of the P-type semiconductor layer, which is far away from the transparent substrate.

3. The LED chip of claim 2, wherein said LED chip comprises:

an edge groove penetrating the current spreading layer, the P-type semiconductor layer and the active layer, and a portion of the N-type semiconductor layer, the edge groove being for exposing an edge region of the N-type semiconductor layer.

4. The LED chip of claim 3, wherein said first electrode covers sidewalls and exposed edge regions of said N-type semiconductor layer.

5. The LED chip of claim 4, wherein said LED chip further comprises:

the insulating layer is arranged on one side, away from the transparent substrate, of the first electrode;

the insulating layer at least completely covers the sidewalls of the active layer.

6. The LED chip of claim 5, wherein the second electrode is disposed on a side of the insulating layer facing away from the first electrode;

the second electrode covers the P-type semiconductor layer, the side wall of the current spreading layer and the edge area of the current spreading layer.

7. The LED chip of claim 6, wherein said LED chip further comprises:

and the protective layer is arranged on one side of the current spreading layer, which faces away from the transparent substrate.

8. The LED chip of claim 2, wherein said LED chip comprises:

and the side wall groove penetrates through the current expansion layer, the P type semiconductor layer and the active layer and is used for exposing one side edge region of the N type semiconductor layer.

9. The LED chip of claim 8, wherein said LED chip further comprises:

the first isolation layer is arranged in the side wall groove and covers one side edge region exposed by the N-type semiconductor layer, the side wall of the active layer, the side wall of the P-type semiconductor layer and the side wall of the current expansion layer;

and the second isolation layer is opposite to the first isolation layer and covers the side wall of the N-type semiconductor layer, the side wall of the active layer, the side wall of the P-type semiconductor layer and the side wall of the current expansion layer.

10. The LED chip of claim 9, wherein the first electrode covers a sidewall of the N-type semiconductor layer, a sidewall of the first isolation layer, and a portion of an edge surface of the first isolation layer on a side facing away from the transparent substrate;

the second electrode covers the second isolation layer and is in contact with one side surface of the current expansion layer, which is far away from the transparent substrate.

Technical Field

The invention relates to the technical field of LEDs (light emitting diodes), in particular to an LED chip with a side wall special-shaped electrode structure.

Background

With the continuous development of scientific technology, LEDs (Light Emitting diodes) are used as novel Light Emitting devices, and compared with traditional Light Emitting devices, LEDs have the advantages of energy saving, environmental protection, good color rendering and response speed, and the like, and are widely applied to life and work of people, thereby bringing great convenience to daily life of people.

However, the electrode structure of the current LED chip adopts a surface electrode structure, and the surface electrode structure occupies a part of the light-emitting area, which results in low light-emitting efficiency of the LED chip and failure to realize double-sided light emission.

Disclosure of Invention

In view of the above, in order to solve the above problems, the present invention provides an LED chip having a sidewall shaped electrode structure, and the technical solution is as follows:

an LED chip having a sidewall profile electrode structure, the LED chip comprising:

a transparent substrate;

the epitaxial layer is arranged on one side of the transparent substrate and comprises an N-type semiconductor layer, an active layer and a P-type semiconductor layer which are sequentially arranged in a first direction, and the first direction is vertical to the transparent substrate and points to the epitaxial layer from the transparent substrate;

the first electrode and the second electrode are arranged on the side wall of the epitaxial layer, the first electrode is connected with the N-type semiconductor, and the second electrode is connected with the P-type semiconductor.

Preferably, in the above LED chip, the LED chip further includes:

and the current expansion layer is arranged on one side of the P-type semiconductor layer, which is far away from the transparent substrate.

Preferably, in the above LED chip, the LED chip includes:

an edge groove penetrating the current spreading layer, the P-type semiconductor layer and the active layer, and a portion of the N-type semiconductor layer, the edge groove being for exposing an edge region of the N-type semiconductor layer.

Preferably, in the LED chip, the first electrode covers a sidewall of the N-type semiconductor layer and an exposed edge region.

Preferably, in the above LED chip, the LED chip further includes:

the insulating layer is arranged on one side, away from the transparent substrate, of the first electrode;

the insulating layer at least completely covers the sidewalls of the active layer.

Preferably, in the LED chip, the second electrode is disposed on a side of the insulating layer away from the first electrode;

the second electrode covers the P-type semiconductor layer, the side wall of the current spreading layer and the edge area of the current spreading layer.

Preferably, in the above LED chip, the LED chip further includes:

and the protective layer is arranged on one side of the current spreading layer, which faces away from the transparent substrate.

Preferably, in the above LED chip, the LED chip includes:

and the side wall groove penetrates through the current expansion layer, the P type semiconductor layer and the active layer and is used for exposing one side edge region of the N type semiconductor layer.

Preferably, in the above LED chip, the LED chip further includes:

the first isolation layer is arranged in the side wall groove and covers one side edge region exposed by the N-type semiconductor layer, the side wall of the active layer, the side wall of the P-type semiconductor layer and the side wall of the current expansion layer;

and the second isolation layer is opposite to the first isolation layer and covers the side wall of the N-type semiconductor layer, the side wall of the active layer, the side wall of the P-type semiconductor layer and the side wall of the current expansion layer.

Preferably, in the LED chip, the first electrode covers a sidewall of the N-type semiconductor layer, a sidewall of the first isolation layer, and a partial edge surface of the first isolation layer on a side away from the transparent substrate;

the second electrode covers the second isolation layer and is in contact with one side surface of the current expansion layer, which is far away from the transparent substrate.

Compared with the prior art, the invention has the following beneficial effects:

the invention provides an LED chip with a side wall special-shaped electrode structure, which comprises: a transparent substrate; the epitaxial layer is arranged on one side of the transparent substrate and comprises an N-type semiconductor layer, an active layer and a P-type semiconductor layer which are sequentially arranged in a first direction, and the first direction is vertical to the transparent substrate and points to the epitaxial layer from the transparent substrate; the first electrode and the second electrode are arranged on the side wall of the epitaxial layer, the first electrode is connected with the N-type semiconductor, and the second electrode is connected with the P-type semiconductor.

This LED chip replaces the surface electrode structure of conventional LED chip through adopting first electrode and the second electrode that sets up on the epitaxial layer lateral wall, and then the improvement of very big degree the luminous zone area of LED chip to, adopt transparent substrate to realize the two-sided transparent light-emitting of LED chip, with this light-emitting efficiency who improves the LED chip.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.

Fig. 1 is a schematic structural diagram of an LED chip having a sidewall profile electrode structure according to an embodiment of the present invention;

FIGS. 2-11 are schematic views of corresponding partial structures in the fabrication process of the LED chip shown in FIG. 1;

fig. 12 is a schematic structural diagram of another LED chip having a sidewall-shaped electrode structure according to an embodiment of the present invention;

fig. 13-23 are schematic views of corresponding partial structures in the process of manufacturing the LED chip shown in fig. 12.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.

Referring to fig. 1, fig. 1 is a schematic structural diagram of an LED chip having a sidewall-shaped electrode structure according to an embodiment of the present invention.

The LED chip includes:

a transparent substrate 11;

the epitaxial layer is arranged on one side of the transparent substrate 11 and comprises an N-type semiconductor layer 12, an active layer 13 and a P-type semiconductor layer 14 which are sequentially arranged in a first direction, and the first direction is perpendicular to the transparent substrate 11 and is directed to the epitaxial layer from the transparent substrate 11;

and the first electrode 15 and the second electrode 16 are arranged on the side wall of the epitaxial layer, the first electrode 15 is connected with the N-type semiconductor 12, and the second electrode 16 is connected with the P-type semiconductor 14.

In this embodiment, the LED chip replaces the surface electrode structure of the conventional LED chip by using the first electrode 15 and the second electrode 16 disposed on the side wall of the epitaxial layer, so that the light emitting area of the LED chip is greatly increased, and the transparent substrate is used to realize the double-sided transparent light emitting of the LED chip, thereby increasing the light emitting efficiency of the LED chip.

Wherein the N-type semiconductor layer 12 includes, but is not limited to, an N-type gallium nitride layer; the P-type semiconductor layer 14 includes, but is not limited to, a P-type gallium nitride layer.

Specifically, as shown in fig. 1, the LED chip further includes:

and a current spreading layer 17 arranged on the side of the P-type semiconductor layer 14 facing away from the transparent substrate 11.

The current spreading layer 17 is used for current surface spreading, and the material thereof includes, but is not limited to, ITO.

Specifically, as shown in fig. 1, the LED chip includes:

an edge groove penetrating the current spreading layer 17, the P-type semiconductor layer 14 and the active layer 13, and a portion of the N-type semiconductor layer 12, the edge groove for exposing an edge region of the N-type semiconductor layer 12. Even if the edge region of the N-type semiconductor layer 12 forms a stepped structure.

Wherein the width of the exposed edge region of the N-type semiconductor layer 12 is 2 μm to 10 μm; optionally, the width of the exposed edge region of the N-type semiconductor layer 12 is 2.5 μm, 4.2 μm, 7 μm, 8.6 μm, or the like.

The thickness of the N-type semiconductor layer 12 on the step structure is 11000 angstroms to 18000 angstroms.

Specifically, as shown in fig. 1, the first electrode 15 covers the sidewall and the exposed edge region of the N-type semiconductor layer 12.

The thickness of the first electrode 15 in the first direction is smaller than the thickness of the N-type semiconductor layer 12 in the first direction, that is, the first electrode 15 is ensured to be not in contact with the active layer 13.

Optionally, the thickness of the first electrode 15 on the step structure of the N-type semiconductor layer 12 is 30000 angstroms to 40000 angstroms.

Specifically, as shown in fig. 1, the LED chip further includes:

an insulating layer 18 disposed on a side of the first electrode 15 facing away from the transparent substrate 11;

the insulating layer 18 covers at least the sidewalls of the active layer 13 completely.

Optionally, the thickness of the insulating layer 18 in the first direction is 2000 angstroms to 5000 angstroms.

Specifically, as shown in fig. 1, the second electrode 16 is disposed on a side of the insulating layer 18 facing away from the first electrode 15;

the second electrode 16 covers sidewalls of the P-type semiconductor layer 14 and the current spreading layer 17, and an edge region of the current spreading layer 17.

Optionally, the thickness of the second electrode 16 in the first direction is 8000 a to 18000 a.

Wherein the insulating layer 18 is used for insulating and isolating the first electrode 15 and the second electrode 16 in a first direction.

Specifically, as shown in fig. 1, the LED chip further includes:

a protective layer 19 arranged on the side of the current spreading layer 17 facing away from the transparent substrate 11.

Optionally, in another embodiment of the present invention, based on the LED chip with the sidewall-shaped electrode structure shown in fig. 1, a manufacturing process of the LED chip is described below, specifically as follows:

the method comprises the following steps:

as shown in fig. 2, a base substrate 20 is provided.

Step two:

as shown in fig. 3, an epitaxial layer is formed on the base substrate 20, and the epitaxial layer includes an N-type semiconductor layer 12, an active layer 13, and a P-type semiconductor layer 14 sequentially arranged in a first direction, which is perpendicular to the base substrate 20 and is directed toward the epitaxial layer from the base substrate 20.

Step three:

as shown in fig. 4, a current spreading layer 17 is formed on a side of the P-type semiconductor layer 14 facing away from the active layer 13.

The current spreading layer 17 is used for current surface spreading, and the material thereof includes, but is not limited to, ITO.

Step four:

as shown in fig. 5, the wafer structure shown in fig. 4 is etched back to the base substrate 20, leaving a trench AA for the isolation of the inter-die electrodes.

The width of the channel AA is 10-100 μm, and specifically, the width of the channel AA can be selected according to actual conditions and only needs to be within the width range.

Step five:

as shown in fig. 6, on the basis of the wafer structure shown in fig. 5, an etching process is performed again to penetrate through the current spreading layer 17, the P-type semiconductor layer 14 and the active layer 13, and a portion of the edge region of the N-type semiconductor layer 12, so as to expose the edge region of the N-type semiconductor layer 12 that is not etched, and the edge region of the N-type semiconductor layer 12 and the trench AA form a step structure BB.

Wherein the width of the exposed edge region of the N-type semiconductor layer 12 is 2 μm to 10 μm; optionally, the width of the exposed edge region of the N-type semiconductor layer 12 is 2.5 μm, 4.2 μm, 7 μm, 8.6 μm, or the like.

The thickness of the N-type semiconductor layer 12 on the step structure is 11000 to 18000 angstroms, and the etching depth of the N-type semiconductor layer 12 can also be understood to be 11000 to 18000 angstroms.

Step six:

as shown in fig. 7, on the basis of the wafer structure shown in fig. 6, vapor deposition of the first electrode 15 is performed on the exposed region of the N-type semiconductor layer 12 to form an N-electrode.

Wherein the first electrode 15 covers the sidewall of the N-type semiconductor layer 12 and the exposed edge region.

The thickness of the first electrode 15 in the first direction is smaller than the thickness of the N-type semiconductor layer 12 in the first direction, that is, the first electrode 15 is ensured to be not in contact with the active layer 13.

Optionally, the thickness of the first electrode 15 on the step structure of the N-type semiconductor layer 12 is 30000 angstroms to 40000 angstroms.

Step seven:

as shown in fig. 8, on the basis of the wafer structure shown in fig. 7, an insulating layer 18 is deposited on the side of the first electrode 15 facing away from the base substrate 20.

The insulating layer 18 covers at least the sidewalls of the active layer 13 completely.

Optionally, the thickness of the insulating layer 18 in the first direction is 2000 angstroms to 5000 angstroms.

Step eight:

as shown in fig. 9, on the basis of the wafer structure shown in fig. 8, a second electrode 16 is evaporated on the side of the insulating layer 18 facing away from the base substrate 20 to form a P electrode.

The second electrode 16 covers sidewalls of the P-type semiconductor layer 14 and the current spreading layer 17, and an edge region of the current spreading layer 17.

Optionally, the thickness of the second electrode 16 in the first direction is 8000 a to 18000 a.

Wherein the insulating layer 18 is used for insulating and isolating the first electrode 15 and the second electrode 16 in a first direction.

Through the sixth step, the seventh step and the eighth step, the manufacturing of the side wall special-shaped electrode can be completed, the surface electrode structure of the conventional LED chip is replaced, the surface area of the chip occupied by the electrode is reduced, the light emitting area of the LED chip is further improved to a great extent, and experiments prove that the light emitting area of the LED chip provided by the embodiment of the invention can be increased by 3% -40%.

As shown in fig. 10, the fabrication of the sidewall-shaped electrode is not affected by the shape of the chip, and chips having various shapes can be fabricated.

Step nine:

as shown in fig. 11, on the wafer structure shown in fig. 9, a protective layer 19 is formed on the side of the current spreading layer 17 facing away from the base substrate 20.

Wherein the protective layer 19 includes, but is not limited to, a silicon dioxide protective layer having a thickness in the first direction of 800 angstroms to 2300 angstroms.

Step ten:

as shown in fig. 1, on the basis of the wafer structure shown in fig. 11, the base substrate 20 is removed, and the wafer structure is transferred onto the transparent substrate 11, so as to form a double-sided light-emitting LED chip structure.

Optionally, the transparent substrate may be a transparent flexible substrate, and may be powered on through the sidewall special-shaped electrodes (the first electrode 15 and the second electrode 16), and electrode packaging is not required to be performed on the front surface or the back surface of the core particle, so that a double-sided light-emitting LED chip structure is formed, and the light-emitting area is large.

Optionally, another LED chip having a sidewall-shaped electrode structure is further provided in another embodiment of the present invention, referring to fig. 12, fig. 12 is a schematic structural diagram of another LED chip having a sidewall-shaped electrode structure according to an embodiment of the present invention.

The LED chip includes:

a transparent substrate 11;

the epitaxial layer is arranged on one side of the transparent substrate 11 and comprises an N-type semiconductor layer 12, an active layer 13 and a P-type semiconductor layer 14 which are sequentially arranged in a first direction, and the first direction is perpendicular to the transparent substrate 11 and is directed to the epitaxial layer from the transparent substrate 11;

and the first electrode 15 and the second electrode 16 are arranged on the side wall of the epitaxial layer, the first electrode 15 is connected with the N-type semiconductor 12, and the second electrode 16 is connected with the P-type semiconductor 14.

In this embodiment, the LED chip replaces the surface electrode structure of the conventional LED chip by using the first electrode 15 and the second electrode 16 disposed on the side wall of the epitaxial layer, so that the light emitting area of the LED chip is greatly increased, and the transparent substrate is used to realize the double-sided transparent light emitting of the LED chip, thereby increasing the light emitting efficiency of the LED chip.

Wherein the N-type semiconductor layer 12 includes, but is not limited to, an N-type gallium nitride layer; the P-type semiconductor layer 14 includes, but is not limited to, a P-type gallium nitride layer.

Specifically, as shown in fig. 12, the LED chip further includes:

and a current spreading layer 17 arranged on the side of the P-type semiconductor layer 14 facing away from the transparent substrate 11.

The current spreading layer 17 is used for current surface spreading, and the material thereof includes, but is not limited to, ITO.

Specifically, as shown in fig. 12, the LED chip includes:

and a sidewall groove penetrating the current spreading layer 17, the P-type semiconductor layer 14 and the active layer 13, the sidewall groove exposing a side edge region of the N-type semiconductor layer 12.

Wherein, the width of the exposed side edge region of the N-type semiconductor layer 12 is 10 μm-100 μm; optionally, the width of the exposed one-side edge region of the N-type semiconductor layer 12 is 12 μm, 43 μm, 64 μm, 86 μm, or the like.

Specifically, as shown in fig. 12, the LED chip further includes:

a first isolation layer 18, wherein the first isolation layer 18 is disposed in the sidewall groove and covers an exposed side edge region of the N-type semiconductor layer 12, a sidewall of the active layer 13, a sidewall of the P-type semiconductor layer 14, and a sidewall of the current spreading layer 17;

a second isolation layer 19, wherein the second isolation layer 19 is disposed opposite to the first isolation layer 18, and covers a sidewall of the N-type semiconductor layer 12, a sidewall of the active layer 13, a sidewall of the P-type semiconductor layer 14, and a sidewall of the current spreading layer 17.

Specifically, as shown in fig. 12, the first electrode 15 covers a sidewall of the N-type semiconductor layer 12, a sidewall of the first isolation layer 18, and a partial edge surface of the first isolation layer 18 on a side away from the transparent substrate 11;

the second electrode 16 covers the second isolation layer 19 and is in contact with a side surface of the current spreading layer 17 facing away from the transparent substrate 11.

Optionally, in another embodiment of the present invention, based on the LED chip with the sidewall-shaped electrode structure shown in fig. 12, a manufacturing process of the LED chip is described below, specifically as follows:

the method comprises the following steps:

as shown in fig. 13, a base substrate 20 is provided.

Step two:

as shown in fig. 14, an epitaxial layer is formed on the base substrate 20, and the epitaxial layer includes an N-type semiconductor layer 12, an active layer 13, and a P-type semiconductor layer 14 sequentially arranged in a first direction, which is perpendicular to the base substrate 20 and is directed toward the epitaxial layer from the base substrate 20.

Step three:

as shown in fig. 15, a current spreading layer 17 is formed on a side of the P-type semiconductor layer 14 facing away from the active layer 13.

The current spreading layer 17 is used for current surface spreading, and the material thereof includes, but is not limited to, ITO.

Step four:

as shown in fig. 16, the wafer structure shown in fig. 15 is etched back to the base substrate 20, leaving a trench AA for the inter-die electrode isolation.

The width of the channel AA is 10-100 μm, and specifically, the width of the channel AA can be selected according to actual conditions and only needs to be within the width range.

Step five:

as shown in fig. 17, on the basis of the wafer structure shown in fig. 16, an etching process is performed again to penetrate through the edge regions of the current spreading layer 17, the P-type semiconductor layer 14 and the active layer 13 for exposing the edge region of the N-type semiconductor layer 12, and the edge region of the N-type semiconductor layer 12 and the channel AA form a step structure BB.

Wherein the width of the exposed edge region of the N-type semiconductor layer 12 is 2 μm to 10 μm; optionally, the width of the exposed edge region of the N-type semiconductor layer 12 is 2.5 μm, 4.2 μm, 7 μm, 8.6 μm, or the like.

Step six:

as shown in fig. 18, an isolation layer 21 is deposited on the wafer structure shown in fig. 17 to facilitate electrode isolation.

Step seven:

as shown in fig. 19, on the basis of the wafer structure shown in fig. 18, the isolation layer 21 is subjected to DE etching, and an N-type semiconductor layer 12, that is, a first isolation layer 18, is etched on one side, where the first isolation layer 18 is disposed in the sidewall groove and covers an exposed one-side edge region of the N-type semiconductor layer 12, a sidewall of the active layer 13, a sidewall of the P-type semiconductor layer 14, and a sidewall of the current spreading layer 17.

The other side is kept with an isolation layer, i.e., a second isolation layer 19, where the second isolation layer 19 is disposed opposite to the first isolation layer 18 and covers the sidewall of the N-type semiconductor layer 12, the sidewall of the active layer 13, the sidewall of the P-type semiconductor layer 14, and the sidewall of the current spreading layer 17.

Step eight:

as shown in fig. 20, on the basis of the wafer structure shown in fig. 19, a first electrode 15(N electrode) and a second electrode 16(P electrode) are evaporated, wherein the first electrode 15 covers a sidewall of the N-type semiconductor layer 12, a sidewall of the first isolation layer 18, and a partial edge surface of the first isolation layer 18 on the side away from the base substrate 20;

the second electrode 16 covers the second isolation layer 19 and is in contact with a side surface of the current spreading layer 17 facing away from the base substrate 20.

Through the sixth step, the seventh step and the eighth step, the manufacturing of the side wall special-shaped electrode can be completed, the surface electrode structure of the conventional LED chip is replaced, the surface area of the chip occupied by the electrode is reduced, the light emitting area of the LED chip is further improved to a great extent, and experiments prove that the light emitting area of the LED chip provided by the embodiment of the invention can be increased by 3% -40%.

Step nine:

as shown in fig. 12, on the basis of the wafer structure shown in fig. 20, the base substrate 20 is removed, and the wafer structure is transferred onto the transparent substrate 11, so as to form a double-sided light-emitting LED chip structure.

Optionally, the transparent substrate 11 may be a transparent flexible substrate, and may be powered on through the sidewall special-shaped electrodes (the first electrode and the second electrode), and electrode packaging is not required to be performed on the front surface or the back surface of the core particle, so that a double-sided light-emitting LED chip structure is formed, and the light-emitting area is large.

Further, as shown in fig. 21, 22 and 23, the fabrication of the side wall profile electrode is not affected by the shape of the chip, and chips having various shapes can be fabricated.

The LED chip with the sidewall special-shaped electrode structure provided by the present invention is described in detail above, and the principle and the implementation of the present invention are explained herein by applying specific examples, and the description of the above examples is only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.

It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.

It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include or include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.